1
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Jin Y, Yu VWZ, Govoni M, Xu AC, Galli G. Excited State Properties of Point Defects in Semiconductors and Insulators Investigated with Time-Dependent Density Functional Theory. J Chem Theory Comput 2023. [PMID: 38039161 DOI: 10.1021/acs.jctc.3c00986] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/03/2023]
Abstract
We present a formulation of spin-conserving and spin-flip hybrid time-dependent density functional theory (TDDFT), including the calculation of analytical forces, which allows for efficient calculations of excited state properties of solid-state systems with hundreds to thousands of atoms. We discuss an implementation on both GPU- and CPU-based architectures along with several acceleration techniques. We then apply our formulation to the study of several point defects in semiconductors and insulators, specifically the negatively charged nitrogen-vacancy and neutral silicon-vacancy centers in diamond, the neutral divacancy center in 4H silicon carbide, and the neutral oxygen-vacancy center in magnesium oxide. Our results highlight the importance of taking into account structural relaxations in excited states in order to interpret and predict optical absorption and emission mechanisms in spin defects.
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Affiliation(s)
- Yu Jin
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Victor Wen-Zhe Yu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Marco Govoni
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Physics, Computer Science, and Mathematics, University of Modena and Reggio Emilia, Modena 41125, Italy
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Andrew C Xu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Giulia Galli
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
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2
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Seifu D, Peng Q, Sze K, Hou J, Gao F, Lan Y. Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review. Molecules 2023; 28:molecules28104151. [PMID: 37241892 DOI: 10.3390/molecules28104151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 05/12/2023] [Accepted: 05/13/2023] [Indexed: 05/28/2023] Open
Abstract
Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices' radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV-vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.
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Affiliation(s)
- Dereje Seifu
- Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD 21251, USA
| | - Qing Peng
- Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia
- K. A. CARE Energy Research and Innovation Center at Dhahran, Dhahran 31261, Saudi Arabia
- Hydrogen and Energy Storage Center, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia
| | - Kit Sze
- Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD 21251, USA
| | - Jie Hou
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Fei Gao
- Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA
| | - Yucheng Lan
- Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD 21251, USA
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3
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Bergenti I, Kamiya T, Li D, Riminucci A, Graziosi P, MacLaren DA, Rakshit RK, Singh M, Benini M, Tada H, Smogunov A, Dediu VA. Spinterface Effects in Hybrid La 0.7Sr 0.3MnO 3/SrTiO 3/C 60/Co Magnetic Tunnel Junctions. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:4273-4279. [PMID: 36193212 PMCID: PMC9523579 DOI: 10.1021/acsaelm.2c00300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Accepted: 08/10/2022] [Indexed: 06/16/2023]
Abstract
Orbital hybridization at the Co/C60 interface been has proved to strongly enhance the magnetic anisotropy of the cobalt layer, promoting such hybrid systems as appealing components for sensing and memory devices. Correspondingly, the same hybridization induces substantial variations in the ability of the Co/C60 interface to support spin-polarized currents and can bring out a spin-filtering effect. The knowledge of the effects at both sides allows for a better and more complete understanding of interfacial physics. In this paper we investigate the Co/C60 bilayer in the role of a spin-polarized electrode in the La0.7Sr0.3MnO3/SrTiO3/C60/Co configuration, thus substituting the bare Co electrode in the well-known La0.7Sr0.3MnO3/SrTiO3/Co magnetic tunnel junction. The study revealed that the spin polarization (SP) of the tunneling currents escaping from the Co/C60 electrode is generally negative: i.e., inverted with respect to the expected SP of the Co electrode. The observed sign of the spin polarization was confirmed via DFT calculations by considering the hybridization between cobalt and molecular orbitals.
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Affiliation(s)
- Ilaria Bergenti
- Institute
of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy
| | - Takeshi Kamiya
- Department
of Materials Engineering Science, Osaka
University, 1-3, Machikaneyama, Toyonaka, Osaka, Japan 560-8531
| | - Dongzhe Li
- CEMES,
Université de Toulouse, CNRS, 29 rue Jeanne Marvig, F-31055 Toulouse, France
| | - Alberto Riminucci
- Institute
of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy
| | - Patrizio Graziosi
- Institute
of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy
| | - Donald A. MacLaren
- SUPA,
School of Physics and Astronomy, University
of Glasgow, Glasgow G12 8QQ, U.K.
| | - Rajib K. Rakshit
- CSIR
- National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
| | - Manju Singh
- CSIR
- National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India
| | - Mattia Benini
- Institute
of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy
| | - Hirokazu Tada
- Department
of Materials Engineering Science, Osaka
University, 1-3, Machikaneyama, Toyonaka, Osaka, Japan 560-8531
| | - Alexander Smogunov
- Service de
Physique de l’Etat Condensé (SPEC), CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette
Cedex France
| | - Valentin A. Dediu
- Institute
of Nanostructured Materials ISMN-CNR, Via Gobetti 101, Bologna 40129, Italy
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4
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Yang JQ, Wang R, Ren Y, Mao JY, Wang ZP, Zhou Y, Han ST. Neuromorphic Engineering: From Biological to Spike-Based Hardware Nervous Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003610. [PMID: 33165986 DOI: 10.1002/adma.202003610] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Revised: 07/27/2020] [Indexed: 06/11/2023]
Abstract
The human brain is a sophisticated, high-performance biocomputer that processes multiple complex tasks in parallel with high efficiency and remarkably low power consumption. Scientists have long been pursuing an artificial intelligence (AI) that can rival the human brain. Spiking neural networks based on neuromorphic computing platforms simulate the architecture and information processing of the intelligent brain, providing new insights for building AIs. The rapid development of materials engineering, device physics, chip integration, and neuroscience has led to exciting progress in neuromorphic computing with the goal of overcoming the von Neumann bottleneck. Herein, fundamental knowledge related to the structures and working principles of neurons and synapses of the biological nervous system is reviewed. An overview is then provided on the development of neuromorphic hardware systems, from artificial synapses and neurons to spike-based neuromorphic computing platforms. It is hoped that this review will shed new light on the evolution of brain-like computing.
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Affiliation(s)
- Jia-Qin Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ruopeng Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jing-Yu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhan-Peng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
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5
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Cao K, Cai W, Liu Y, Li H, Wei J, Cui H, He X, Li J, Zhao C, Zhao W. In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions. NANOSCALE 2018; 10:21225-21230. [PMID: 30417186 DOI: 10.1039/c8nr05928d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Perpendicular magnetic tunnel junctions (p-MTJs) provide advantages such as infinite endurance, high thermal stability, and fast and low-power switching. They are considered as a promising non-volatile memory device to build non-von Neumann computing paradigms and definitively overcome the power bottleneck. Numerous design proposals have been made for p-MTJ logic, but a few physical realizations have been reported. In this paper, we present the experimental implementation of universal stateful logic gates such as "OR", "AND", and material implication ("IMP") by connecting two nanoscale p-MTJs in parallel. Owing to the voltage dependence of switching probability for the spin transfer torque mechanism, the same structure can be reconfigured to different logic gates with only electrical signals. One single-cycle operation is thus required for all the basic Boolean functions. Such in-memory direct processing has great potential to meet some key requirements such as a high energy/areal efficiency and high speed for future computing hardware.
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Affiliation(s)
- Kaihua Cao
- Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University, 100191 Beijing, P.R. China.
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6
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Boukari S, Jabbar H, Schleicher F, Gruber M, Avedissian G, Arabski J, Da Costa V, Schmerber G, Rengasamy P, Vileno B, Weber W, Bowen M, Beaurepaire E. Disentangling Magnetic Hardening and Molecular Spin Chain Contributions to Exchange Bias in Ferromagnet/Molecule Bilayers. NANO LETTERS 2018; 18:4659-4663. [PMID: 29991266 DOI: 10.1021/acs.nanolett.8b00570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We performed ferromagnetic resonance and magnetometry experiments to clarify the relationship between two reported magnetic exchange effects arising from interfacial spin-polarized charge transfer in ferromagnetic metal (FM)/molecule bilayers: the magnetic hardening effect and spinterface-stabilized molecular spin chains. To disentangle these effects, we tuned the metal phthalocyanine molecule central site's magnetic moment to enhance or suppress the formation of spin chains in the molecular film. We find that both effects are distinct, and additive. In the process, we extend the list of FM/molecule candidate pairs that are known to generate magnetic exchange effects, experimentally confirm the predicted increase in anisotropy upon molecular adsorption, and show that spin chains within the molecular film can enhance magnetic exchange. Our results confirm, as an echo to progress regarding inorganic spintronic tunnelling, that spintronic tunnelling across structurally ordered organic barriers has been reached through previous magnetotransport experiments.
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Affiliation(s)
- Samy Boukari
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Hashim Jabbar
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Filip Schleicher
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Manuel Gruber
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Garen Avedissian
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Jacek Arabski
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Victor Da Costa
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Guy Schmerber
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Prashanth Rengasamy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Bertrand Vileno
- Institut de Chimie de Strasbourg, Université de Strasbourg, CNRS UMR7177 , 4 rue Blaise Pascal , F-67081 Strasbourg Cedex , France
- French EPR Federation of Research (REseau NAtional de Rpe interDisciplinaire (RENARD), Fédération IR-RPE CNRS 3443) , 59655 Villeneuve d'Ascq Cedex , France
| | - Wolfgang Weber
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Martin Bowen
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Eric Beaurepaire
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
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7
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Vega NC, Marin O, Tosi E, Grinblat G, Mosquera E, Moreno MS, Tirado M, Comedi D. The shell effect on the room temperature photoluminescence from ZnO/MgO core/shell nanowires: exciton-phonon coupling and strain. NANOTECHNOLOGY 2017; 28:275702. [PMID: 28525395 DOI: 10.1088/1361-6528/aa7454] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The room temperature photoluminescence from ZnO/MgO core/shell nanowires (NWs) grown by a simple two-step vapor transport method was studied for various MgO shell widths (w). Two distinct effects induced by the MgO shell were clearly identified. The first one, related to the ZnO/MgO interface formation, is evidenced by strong enhancements of the zero-phonon and first phonon replica of the excitonic emission, which are accompanied by a total suppression of its second phonon replica. This effect can be explained by the reduction of the band bending within the ZnO NW core that follows the removal of atmospheric adsorbates and associated surface traps during the MgO growth process on one hand, and a reduced exciton-phonon coupling as a result of the mechanical stabilization of the outermost ZnO NW monolayers by the MgO shell on the other hand. The second effect is the gradual increase of the excitonic emission and decrease in the defect related emission by up to two and one orders of magnitude, respectively, when w is increased in the ∼3-17 nm range. Uniaxial strain build-up within the ZnO NW core with increasing w, as detected by x-ray diffraction measurements, and photocarrier tunneling escape from the ZnO core through the MgO shell enabled by defect-states are proposed as possible mechanisms involved in this effect. These findings are expected to be of key significance for the efficient design and fabrication of ZnO/MgO NW heterostructures and devices.
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Affiliation(s)
- N C Vega
- NanoProject and Laboratorio de Física del Sólido, Depto. de Física, FACET, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 Tucumán, Argentina-CONICET, Argentina
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8
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Studniarek M, Halisdemir U, Schleicher F, Taudul B, Urbain E, Boukari S, Hervé M, Lambert CH, Hamadeh A, Petit-Watelot S, Zill O, Lacour D, Joly L, Scheurer F, Schmerber G, Da Costa V, Dixit A, Guitard PA, Acosta M, Leduc F, Choueikani F, Otero E, Wulfhekel W, Montaigne F, Monteblanco EN, Arabski J, Ohresser P, Beaurepaire E, Weber W, Alouani M, Hehn M, Bowen M. Probing a Device's Active Atoms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1606578. [PMID: 28295696 DOI: 10.1002/adma.201606578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2016] [Revised: 01/25/2017] [Indexed: 06/06/2023]
Abstract
Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research.
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Affiliation(s)
- Michał Studniarek
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192, Gif-sur-Yvette, France
| | - Ufuk Halisdemir
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Filip Schleicher
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Beata Taudul
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Etienne Urbain
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Samy Boukari
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Marie Hervé
- Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131, Karlsruhe, Germany
| | - Charles-Henri Lambert
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Abbass Hamadeh
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Sebastien Petit-Watelot
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Olivia Zill
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Daniel Lacour
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Loïc Joly
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Fabrice Scheurer
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Guy Schmerber
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Victor Da Costa
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Anant Dixit
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Pierre André Guitard
- Service de Physique de l'Etat Condensé, CEA-IRAMIS-SPEC (CNRS-MPPU-URA 2464) CEA-Saclay, F-91191, Gif-sur-Yvette Cedex, France
| | - Manuel Acosta
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Florian Leduc
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192, Gif-sur-Yvette, France
| | - Fadi Choueikani
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192, Gif-sur-Yvette, France
| | - Edwige Otero
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192, Gif-sur-Yvette, France
| | - Wulf Wulfhekel
- Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131, Karlsruhe, Germany
| | - François Montaigne
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Elmer Nahuel Monteblanco
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Jacek Arabski
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Philippe Ohresser
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192, Gif-sur-Yvette, France
| | - Eric Beaurepaire
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Wolfgang Weber
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Mébarek Alouani
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
| | - Michel Hehn
- Institut Jean Lamour UMR 7198 CNRS, Université de Lorraine, BP 70239, 54506, Vandoeuvre les Nancy Cedex, France
| | - Martin Bowen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000, Strasbourg, France
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9
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Joly L, Muller B, Sternitzky E, Faullumel JG, Boulard A, Otero E, Choueikani F, Kappler JP, Studniarek M, Bowen M, Ohresser P. Versatile variable temperature insert at the DEIMOS beamline for in situ electrical transport measurements. JOURNAL OF SYNCHROTRON RADIATION 2016; 23:652-657. [PMID: 27140143 DOI: 10.1107/s1600577516002551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2015] [Accepted: 02/11/2016] [Indexed: 06/05/2023]
Abstract
The design and the first experiments are described of a versatile cryogenic insert used for its electrical transport capabilities. The insert is designed for the cryomagnet installed on the DEIMOS beamline at the SOLEIL synchrotron dedicated to magnetic characterizations through X-ray absorption spectroscopy (XAS) measurements. This development was spurred by the multifunctional properties of novel materials such as multiferroics, in which, for example, the magnetic and electrical orders are intertwined and may be probed using XAS. The insert thus enables XAS to in situ probe this interplay. The implementation of redundant wiring and careful shielding also enables studies on operating electronic devices. Measurements on magnetic tunnel junctions illustrate the potential of the equipment toward XAS studies of in operando electronic devices.
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Affiliation(s)
- L Joly
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - B Muller
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - E Sternitzky
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - J G Faullumel
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - A Boulard
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - E Otero
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France
| | - F Choueikani
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France
| | - J P Kappler
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France
| | - M Studniarek
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - M Bowen
- Institut de Physique et de Chimie des Materiaux de Strasbourg, Université de Strasbourg, UMR 7504, 23 Rue du Loess, BP 43, 67034 Strasbourg Cedex 2, France
| | - P Ohresser
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France
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