Optical transmission enhacement through chemically tuned two-dimensional bismuth chalcogenide nanoplates

Chemical Intercalation of Layered Materials: From Structure Tailoring to Applications

The intercalation of layered materials offers a flexible approach for tailoring their structures and generating unexpected properties. This review provides perspectives on the chemical intercalation of layered materials, including graphite/graphene, transition metal dichalcogenides, MXenes, and some particular materials. The characteristics of the different intercalation methods and their chemical mechanisms are discussed. The influence of intercalation on the structural changes of the host materials and the structural change how to affect the intrinsic properties of the intercalation compounds are discussed. Furthermore, a perspective on the applications of intercalation compounds in fields such as energy conversion and storage, catalysis, smart devices, biomedical applications, and environmental remediation is provided. Finally, brief insights into the challenges and future opportunities for the chemical intercalation of layered materials are provided.

Intercalation in 2D materials and in situ studies

Intercalation of atoms, ions and molecules is a powerful tool for altering or tuning the properties - interlayer interactions, in-plane bonding configurations, Fermi-level energies, electronic band structures and spin-orbit coupling - of 2D materials. Intercalation can induce property changes in materials related to photonics, electronics, optoelectronics, thermoelectricity, magnetism, catalysis and energy storage, unlocking or improving the potential of 2D materials in present and future applications. In situ imaging and spectroscopy technologies are used to visualize and trace intercalation processes. These techniques provide the opportunity for deciphering important and often elusive intercalation dynamics, chemomechanics and mechanisms, such as the intercalation pathways, reversibility, uniformity and speed. In this Review, we discuss intercalation in 2D materials, beginning with a brief introduction of the intercalation strategies, then we look into the atomic and intrinsic effects of intercalation, followed by an overview of their in situ studies, and finally provide our outlook.

Chemically tuned intermediate band states in atomically thin CuxGeSe/SnS quantum material for photovoltaic applications

A new generation of quantum material derived from intercalating zerovalent atoms such as Cu into the intrinsic van der Waals gap at the interface of atomically thin two-dimensional GeSe/SnS heterostructure is designed, and their optoelectronic features are explored for next-generation photovoltaic applications. Advanced ab initio modeling reveals that many-body effects induce intermediate band (IB) states, with subband gaps (~0.78 and 1.26 electron volts) ideal for next-generation solar devices, which promise efficiency greater than the Shockley-Queisser limit of ~32%. The charge carriers across the heterojunction are both energetically and spontaneously spatially confined, reducing nonradiative recombination and boosting quantum efficiency. Using this IB material in a solar cell prototype enhances absorption and carrier generation in the near-infrared to visible light range. Tuning the active layer's thickness increases optical activity at wavelengths greater than 600 nm, achieving ~190% external quantum efficiency over a broad solar wavelength range, underscoring its potential in advanced photovoltaic technology.

Hafnium, Titanium, and Zirconium Intercalation in 2D Layered Nanomaterials

Altering the physical and chemical properties of a layered material through intercalation has emerged as a unique strategy toward tunable applications. In this work, we demonstrate a wet chemical method to intercalate titanium, hafnium, and zirconium into 2D layered nanomaterials. The metals are intercalated using bis-tetrahydrofuran metal halide complexes. Metal intercalation is demonstrated in nanomaterials of Bi2Se3, Si2Te3, MoO3, and GeS. This strategy intercalates, on average, 3 atm % or less of Hf, Ti, and Zr that share charge with the host nanomaterial. This methodology is used to chemochromically alter MoO3 from transparent white to dark blue.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Solution-Phase Synthesis of Vanadium Intercalated 1T'-WS2 with Tunable Electronic Properties

Metal ion intercalation into Group VI transition metal dichalcogenides enables control over their carrier transport properties. In this work, we demonstrate a low-temperature, solution-phase synthetic method to intercalate cationic vanadium complexes into bulk WS₂. Vanadium intercalation expands the interlayer spacing from 6.2 to 14.2 Å and stabilizes the 1T' phase of WS₂. Kelvin-probe force microscopy measurements indicate that vanadium binding in the van der Waals gap causes an increase in the Fermi level of 1T'-WS₂ by 80 meV due to hybridization of vanadium 3d orbitals with the conduction band of the TMD. As a result, the carrier type switches from p-type to n-type, and carrier mobility increases by an order of magnitude relative to the Li-intercalated precursor. Both the conductivity and thermal activation barrier for carrier transport are readily tuned by varying the concentration of VCl₃ during the cation-exchange reaction.

Electrical Contacts With 2D Materials: Current Developments and Future Prospects

Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.

Controllable Phase Transition Properties in VO2 Films via Metal-Ion Intercalation

VO₂ has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (T_c) tuning in VO₂ is desired. In this study, tailorable SMT characteristics in VO₂ films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li⁺ during the intercalation process, T_c of VO₂ can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective T_c tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO₂ introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO₂ phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

A primer on twistronics: a massless Dirac fermion's journey to moiré patterns and flat bands in twisted bilayer graphene

The recent discovery of superconductivity in magic-angle twisted bilayer graphene (TBLG) has sparked a renewed interest in the strongly-correlated physics ofsp²carbons, in stark contrast to preliminary investigations which were dominated by the one-body physics of the massless Dirac fermions. We thus provide a self-contained, theoretical perspective of the journey of graphene from its single-particle physics-dominated regime to the strongly-correlated physics of the flat bands. Beginning from the origin of the Dirac points in condensed matter systems, we discuss the effect of the superlattice on the Fermi velocity and Van Hove singularities in graphene and how it leads naturally to investigations of the moiré pattern in van der Waals heterostructures exemplified by graphene-hexagonal boron-nitride and TBLG. Subsequently, we illuminate the origin of flat bands in TBLG at the magic angles by elaborating on a broad range of prominent theoretical works in a pedagogical way while linking them to available experimental support, where appropriate. We conclude by providing a list of topics in the study of the electronic properties of TBLG not covered by this review but may readily be approached with the help of this primer.

2D Layers of Group VA Semiconductors: Fundamental Properties and Potential Applications

Members of the 2D group VA semiconductors (phosphorene, arsenene, antimonene, and bismuthine) present a new class of 2D materials, which are recently gaining a lot of research interest. These materials possess layered morphology, tunable direct bandgap, high charge carrier mobility, high stability, unique in-plane anisotropy, and negative Poisson's ratio. They prepare the ground for novel and multifunctional applications in electronics, optoelectronics, and batteries. The most recent analytical and empirical developments in the fundamental characteristics, fabrication techniques, and potential implementation of 2D group VA materials in this review, along with presenting insights and concerns for the field's future are analyzed.

Heterodimensional superlattice with in-plane anomalous Hall effect

Superlattices-a periodic stacking of two-dimensional layers of two or more materials-provide a versatile scheme for engineering materials with tailored properties1,2. Here we report an intrinsic heterodimensional superlattice consisting of alternating layers of two-dimensional vanadium disulfide (VS2) and a one-dimensional vanadium sulfide (VS) chain array, deposited directly by chemical vapour deposition. This unique superlattice features an unconventional 1T stacking with a monoclinic unit cell of VS2/VS layers identified by scanning transmission electron microscopy. An unexpected Hall effect, persisting up to 380 kelvin, is observed when the magnetic field is in-plane, a condition under which the Hall effect usually vanishes. The observation of this effect is supported by theoretical calculations, and can be attributed to an unconventional anomalous Hall effect owing to an out-of-plane Berry curvature induced by an in-plane magnetic field, which is related to the one-dimensional VS chain. Our work expands the conventional understanding of superlattices and will stimulate the synthesis of more extraordinary superstructures.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Third-order optical nonlinearities of exfoliated Bi2Te3 nanoparticle films in UV, visible and near-infrared ranges measured by tunable femtosecond pulses

We characterize the nonlinear optical properties of synthesized Bi₂Te₃ nanoparticle-contained thin films using the tunable femtosecond laser in the spectral range of 400-1000 nm. These nanoparticles possess a strong saturable absorption and positive nonlinear refraction (-6.8×10^-5 cm W^-1 in the case of 500 nm, 150 fs probe pulses, and 3×10^-10 cm² W^-1 in the case of 400 nm, 150 fs probe pulses, respectively). The spectral, intensity, and temporal variation of saturable absorption and nonlinear refraction of the thin films containing exfoliated Bi₂Te₃ nanoparticles are discussed.

Realization of Oriented and Nanoporous Bismuth Chalcogenide Layers via Topochemical Heteroepitaxy for Flexible Gas Sensors

Most van der Waals two-dimensional (2D) materials without surface dangling bonds show limited surface activities except for their edge sites. Ultrathin Bi₂Se₃, a topological insulator that behaves metal-like under ambient conditions, has been overlooked on its surface activities. Herein, through a topochemical conversion process, ultrathin nanoporous Bi₂Se₃ layers were epitaxially deposited on BiOCl nanosheets with strong electronic coupling, leading to hybrid electronic states with further bandgap narrowing. Such oriented nanoporous Bi₂Se₃ layers possessed largely exposed active edge sites, along with improved surface roughness and film forming ability even on inkjet-printed flexible electrodes. Superior room-temperature NO₂ sensing performance was achieved compared to other 2D materials under bent conditions. Our work demonstrates that creating nanoscale features in 2D materials through topochemical heteroepitaxy is promising to achieve both favorable electronic properties and surface activity toward practical applications.

Enhancement of Photoresponse on Narrow-Bandgap Mott Insulator α-RuCl3 via Intercalation

Charge doping to Mott insulators is critical to realize high-temperature superconductivity, quantum spin liquid state, and Majorana fermion, which would contribute to quantum computation. Mott insulators also have a great potential for optoelectronic applications; however, they showed insufficient photoresponse in previous reports. To enhance the photoresponse of Mott insulators, charge doping is a promising strategy since it leads to effective modification of electronic structure near the Fermi level. Intercalation, which is the ion insertion into the van der Waals gap of layered materials, is an effective charge-doping method without defect generation. Herein, we showed significant enhancement of optoelectronic properties of a layered Mott insulator, α-RuCl₃, through electron doping by organic cation intercalation. The electron-doping results in substantial electronic structure change, leading to the bandgap shrinkage from 1.2 eV to 0.7 eV. Due to localized excessive electrons in RuCl₃, distinct density of states is generated in the valence band, leading to the optical absorption change rather than metallic transition even in substantial doping concentration. The stable near-infrared photodetector using electronic modulated RuCl₃ showed 50 times higher photoresponsivity and 3 times faster response time compared to those of pristine RuCl₃, which contributes to overcoming the disadvantage of a Mott insulator as a promising optoelectronic device and expanding the material libraries.

2D Bi2Se3 materials for optoelectronics

2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

Intercalation Strategy in 2D Materials for Electronics and Optoelectronics

Intercalation is an effective approach to tune the physical and chemical properties of 2D materials due to their abundant van der Waals gaps that can host high-density intercalated guest matters. This approach has been widely employed to modulate the optical, electrical, and photoelectrical properties of 2D materials for their applications in electronic and optoelectronic devices. Thus it is necessary to review the recent progress of the intercalation strategy in 2D materials and their applications in devices. Herein, various intercalation strategies and the novel properties of the intercalated 2D materials as well as their applications in electronics and optoelectronics are summarized. In the end, the development tendency of this promising approach for 2D materials is also outlined.

Enhancing Light-Matter Interactions in MoS2 by Copper Intercalation

The intercalation of layered compounds opens up a vast space of new host-guest hybrids, providing new routes for tuning the properties of materials. Here, it is shown that uniform and continuous layers of copper can be intercalated within the van der Waals gap of bulk MoS2 resulting in a unique Cu-MoS2 hybrid. The new Cu-MoS2 hybrid, which remains semiconducting, possesses a unique plasmon resonance at an energy of ≈1eV, giving rise to enhanced optoelectronic activity. Compared with high-performance MoS2 photodetectors, copper-enhanced devices are superior in their spectral response, which extends into the infrared, and also in their total responsivity, which exceeds 104 A W-1 . The Cu-MoS2 hybrids hold promise for supplanting current night-vision technology with compact, advanced multicolor night vision.

Layered Intercalation Materials

2D layered materials typically feature strong in-plane covalent chemical bonding within each atomic layer and weak out-of-plane van der Waals (vdW) interactions between adjacent layers. The non-bonding nature between neighboring layers naturally results in a vdW gap, in which various foreign species may be inserted without breaking the in-plane covalent bonds. By tailoring the composition, size, structure, and electronic properties of the intercalated guest species and the hosting layered materials, an expansive family of layered intercalation materials may be produced with highly variable compositional and structural features as well as widely tunable physical/chemical properties, invoking unprecedented opportunities in fundamental studies of property modulation and potential applications in diverse technologies, including electronics, optics, superconductors, thermoelectrics, catalysis, and energy storage. Here, the principles and protocols for various intercalation methods, including wet chemical intercalation, gas-phase intercalation, electrochemical intercalation, and ion-exchange intercalation, are comprehensively reviewed and how the intercalated species alter the crystal structure and the interlayer coupling of the host 2D layered materials, introducing unusual physical and chemical properties and enabling devices with superior performance or unique functions, is discussed. To conclude, a brief summary on future research opportunities and emerging challenges in the layered intercalation materials is given.

Electric-Field-Induced Reversible Phase Transitions in a Spontaneously Ion-Intercalated 2D Metal Oxide

Electric field driven reversible phase transitions in two-dimensional (2D) materials are appealing for their potential in switching applications. Here, we introduce potassium intercalated MnO₂ as an exemplary case. We demonstrate the synthesis of large-area single-crystal layered MnO₂ via chemical vapor deposition as thin as 5 nm. These crystals are spontaneously intercalated by potassium ions during the synthesis. We showed that the charge transport in 2D K-MnO₂ is dominated by motion of hydrated potassium ions in the interlayer space. Under a few volts bias, separation of potassium and the structural water leads to formation of different phases at the opposite terminals, and at larger biases K-MnO₂ crystals exhibit reversible layered-to-spinel phase transition. These phase transitions are accompanied by electrical and optical changes in the material. We used the electric field driven ionic motion in K-MnO₂ based devices to demonstrate the memristive capabilities of two terminal devices.

Chemically Switchable n-Type and p-Type Conduction in Bismuth Selenide Nanoribbons for Thermoelectric Energy Harvesting

Realizing switchable n-type and p-type conduction in bismuth selenide (Bi₂Se₃), a traditional thermoelectric material and a topological insulator, is highly beneficial for the development of thermoelectric devices and also of great interest for spintronics and quantum computing. In this work, switching between n-type and p-type conduction in single Bi₂Se₃ nanoribbons is achieved by a reversible copper (Cu) intercalation method. Density functional theory calculations reveal that such a switchable behavior arises from the electronic band structure distortion caused by the high-concentration Cu intercalation and the Cu substitution for Bi sites in the host lattice. A proof-of-concept in-plane thermoelectric generator is fabricated with one pair of the pristine n-type and intercalated p-type Bi₂Se₃ nanoribbons on a microfabricated device, which gives rise to an open-circuit voltage of 4.8 mV and a maximum output power of 0.3 nW under a temperature difference of 29.2 K. This work demonstrates switchable n-type and p-type electrical conduction in Bi₂Se₃ nanoribbons via a facile chemical approach and the practical application of nanoribbons in a thermoelectric device.

Electrochemical Intercalation in Atomically Thin van der Waals Materials for Structural Phase Transition and Device Applications

In van der Waals (vdWs) materials and heterostructures, the interlayers are bonded by weak vdWs interactions due to the lack of dangling bonds. The vdWs gap at the homo- or heterointerface provides great freedom to enrich the tunability of electronic structures by external intercalation of foreign ions or atoms at the interface, leading to the discovery of new physics and functionalities. Herein, the recent progress on electrochemical intercalation of foreign species into atomically thin vdWs materials for structural phase transition and device applications is reviewed and future opportunities are discussed. First, several kinds of electrochemical intercalation platforms to achieve the intercalation in vdWs materials and heterostructures are introduced. Next, the in situ characterization of electrochemical intercalation dynamics by state-of-the-art techniques is summarized, including optical techniques, scanning probe techniques, and electrical transport. Moreover, particular attention is paid on the experimentally reported phase transition and multifunctional applications of intercalated devices. Finally, future applications and challenges of intercalation in vdWs materials and heterostructures are proposed, including the intrinsic intercalation mechanism of solid ion conductors, exact identification of intercalated foreign species by near-field optical techniques, and the tunability of intercalation kinetics for ultrafast switching.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Superlattices based on van der Waals 2D materials

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices.

Intercalation of Layered Materials from Bulk to 2D

Intercalation in few-layer (2D) materials is a rapidly growing area of research to develop next-generation energy-storage and optoelectronic devices, including batteries, sensors, transistors, and electrically tunable displays. Identifying fundamental differences between intercalation in bulk and 2D materials will play a key role in developing functional devices. Herein, advances in few-layer intercalation are addressed in the historical context of bulk intercalation. First, synthesis methods and structural properties are discussed, emphasizing electrochemical techniques, the mechanism of intercalation, and the formation of a solid-electrolyte interphase. To address fundamental differences between bulk and 2D materials, scaling relationships describe how intercalation kinetics, structure, and electronic and optical properties depend on material thickness and lateral dimension. Here, diffusion rates, pseudocapacity, limits of staging, and electronic structure are compared for bulk and 2D materials. Next, the optoelectronic properties are summarized, focusing on charge transfer, conductivity, and electronic structure. For energy devices, opportunities also emerge to design van der Waals heterostructures with high capacities and excellent cycling performance. Initial studies of heterostructured electrodes are compared to state-of-the-art battery materials. Finally, challenges and opportunities are presented for 2D materials in energy and optoelectronic applications, along with promising research directions in synthesis and characterization to engineer 2D materials for superior devices.

van der Waals Transition-Metal Oxide for Vis-MIR Broadband Photodetection via Intercalation Strategy

Defects engineering can broaden the absorption band of wide band gap van der Waals (vdW) materials to the visible or near-IR regime at the expense of material stability and photoresponse speed. Herein, we introduce an atomic intercalation method that brings the wide band gap vdW α-MoO₃ for vis-MIR broadband optoelectronic conversion. We confirm experimentally that intercalation significantly enhances photoabsorption and electrical conductivity buts effects negligible change to the lattice structure as compared with ion intercalation. Charge transfer from the Sn atom to the lattices induces an optoelectrical change. As a result, the Sn-intercalated α-MoO₃ shows room temperature, air stable, broadband photodetection ability from 405 nm to 10 μm, with photoresponsivity better than 9.0 A W^-1 in 405-1500 nm, ∼0.4 A W^-1 at 3700 nm, and 0.16 A W^-1 at 10 μm, response time of ∼0.1 s, and peak D* of 7.3 × 10⁷ cm Hz^0.5 W^-1 at 520 nm. We further reveal that photothermal effect dominates in our detection range by real-time photothermal-electrical measurement, and the materials show a high temperature coefficient of resistance value of -1.658% K^-1 at 300 K. These results provide feasible route for designing broadband absorption materials for photoelectrical, photothermal, or thermal-electrical application.

Doping engineering and functionalization of two-dimensional metal chalcogenides

Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.

Reversible and selective ion intercalation through the top surface of few-layer MoS2

Electrochemical intercalation of ions into the van der Waals gap of two-dimensional (2D) layered materials is a promising low-temperature synthesis strategy to tune their physical and chemical properties. It is widely believed that ions prefer intercalation into the van der Waals gap through the edges of the 2D flake, which generally causes wrinkling and distortion. Here we demonstrate that the ions can also intercalate through the top surface of few-layer MoS₂ and this type of intercalation is more reversible and stable compared to the intercalation through the edges. Density functional theory calculations show that this intercalation is enabled by the existence of natural defects in exfoliated MoS₂ flakes. Furthermore, we reveal that sealed-edge MoS₂ allows intercalation of small alkali metal ions (e.g., Li⁺ and Na⁺) and rejects large ions (e.g., K⁺). These findings imply potential applications in developing functional 2D-material-based devices with high tunability and ion selectivity.

Facile synthesis and magnetic and electrical properties of layered chalcogenides K2CoCu3Q4 (Q for S and Se)

Layered transition-metal chalcogenides have attracted great interest due to their unique electronic and optical properties. Here, we represent two layered quaternary chalcogenides K2CoCu3S4 and K2CoCu3Se4 prepared by a convenient hydrothermal route. From powder XRD and TEM analyses, K2CoCu3Q4 possesses a tetragonal ThCr2Si2-type structure with a random arrangement of Co and Cu atoms. The phase purity of the samples was confirmed by ICP, SEM, and EDS analyses, and the oxidation states of Co and Cu atoms were determined to be +3 and +1 by XPS spectra. Both samples show a weak ferromagnetic behavior at low temperature induced by spin-canted antiferromagnetic ordering. The temperature dependent resistivity, ρ(T), reveals a metallic nature for stoichiometric K2CoCu3S4. The semiconducting behavior of K2CoCu3Se4 could be explained better by variable range hopping (VRH) rather than adiabatic small polaron hopping (SPH). This new series of layered chalcogenides may offer a promising candidate for potential electronic applications.

Atomic-Scale Probing of Reversible Li Migration in 1T-V1+ xSe2 and the Interactions between Interstitial V and Li

Ionic doping and migration in solids underpins a wide range of applications including lithium ion batteries, fuel cells, resistive memories, and catalysis. Here, by in situ transmission electron microscopy technique we directly track the structural evolution during Li ions insertion and extraction in transition metal dichalcogenide 1T-V_{1+ x}Se₂ nanostructures which feature spontaneous localized superstructures due to the periodical interstitial V atoms within the van der Waals interlayers. We find that lithium ion migration destroys the cationic orderings and leads to a phase transition from superstructure to nonsuperstructure. This phase transition is reversible, that is, the superstructure returns back after extraction of lithium ion from Li _yV_{1+ x}Se₂. These findings provide valuable insights into understanding and controlling the structure and properties of 2D materials by general ionic and electric doping.

Chemically Tunable Full Spectrum Optical Properties of 2D Silicon Telluride Nanoplates

Silicon telluride (Si₂Te₃) is a two-dimensional, layered, p-type semiconductor that shows broad near-infrared photoluminescence. We show how, through various means of chemical modification, Si₂Te₃ can have its optoelectronic properties modified in several independent ways without fundamentally altering the host crystalline lattice. Substitutional doping with Ge strongly red-shifts the photoluminescence while substantially lowering the direct and indirect band gaps and altering the optical phonon modes. Intercalation with Ge introduces a sharp 4.3 eV ultraviolet resonance and shifts the bulk plasmon even while leaving the infrared response and band gaps virtually unchanged. Intercalation with copper strengthens the photoluminescence without altering its spectral shape. Thus, silicon telluride is shown to be a chemically tunable platform of full spectrum optical properties promising for optoelectronic applications.

Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics

Doped semiconductors are the most important building elements for modern electronic devices ¹ . In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface^2,3. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits^4-9. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development ¹⁰ . Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS₂, Cu intercalated bilayer SnS₂ obtained by this technique displays a hole field-effect mobility of ~40 cm² V^-1s^-1, and the obtained Co-SnS₂ exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene ⁵ . Combining this intercalation technique with lithography, an atomically seamless p-n-metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.

Atomically Intercalating Tin Ions into the Interlayer of Molybdenum Oxide Nanobelt toward Long-Cycling Lithium Battery

Atomic intercalation of different agents into 2D layered materials can engineer the intrinsic structure on the atomic scale and thus tune the physical and chemical properties for specific applications. Here we successfully introduce tin (Sn) atoms into the interlayer of α-MoO₃ nanobelts forming a new MoO₃-Sn intercalation with ultrastable structure. Combining with theoretical calculations, our synchrotron radiation-based characterizations and electron microscope observations clearly reveal that the intercalated Sn atoms could bond with five O atoms, forming a pentahedral structure. Subsequently, the Sn-O bonds induce a less distorted [MoO₆] octahedral structure, resulting in a unique structure that is distinct with pristine α-MoO₃ or any other molybdenum oxides. Employed as anode for lithium-ion battery, the as-prepared MoO₃-Sn nanobelts display a much higher capacity of 520 mAhg^-1 at 500 mAg^-1 than α-MoO₃ nanobelts (291 mAhg^-1), with a Coulombic efficiency of 99.5%. Moreover, owing to the strong intercalation from Sn ions, the MoO₃-Sn nanobelts pose superior cyclability, durability, and reliability.

Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications

2D materials have attracted tremendous attention due to their unique physical and chemical properties since the discovery of graphene. Despite these intrinsic properties, various modification methods have been applied to 2D materials that yield even more exciting results in terms of tunable properties and device performance. Among all modification methods, intercalation of 2D materials has emerged as a particularly powerful tool: it provides the highest possible doping level and is capable of (ir)reversibly changing the phase of the material. Intercalated 2D materials exhibit extraordinary electrical transport as well as optical, thermal, magnetic, and catalytic properties, which are advantageous for optoelectronics, superconductors, thermoelectronics, catalysis and energy storage applications. The recent progress on host 2D materials, various intercalation species, and intercalation methods, as well as tunable properties and potential applications enabled by intercalation, are comprehensively reviewed.

Unique physicochemical properties of two-dimensional light absorbers facilitating photocatalysis

The emergence of two-dimensional (2D) materials with a large lateral size and extremely small thickness has significantly changed the development of many research areas by producing a variety of unusual physicochemical properties.

Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti₃AuC₂ and Ti₃Au₂C₂ phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti₃SiC₂ single-crystal thin films with simultaneous out-diffusion of Si. Ti₃IrC₂ is subsequently produced by a substitution reaction of Ir for Au in Ti₃Au₂C₂. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 °C in air. The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.

Tunable Broadband Nanocarbon Transparent Conductor by Electrochemical Intercalation

Optical transparent and electrical conducting materials with broadband transmission are important for many applications in optoelectronic, telecommunications, and military devices. However, studies of broadband transparent conductors and their controlled modulation are scarce. In this study, we report that reversible transmittance modulation has been achieved with sandwiched nanocarbon thin films (containing carbon nanotubes (CNTs) and reduced graphene oxide (rGO)) via electrochemical alkali-ion intercalation/deintercalation. The transmittance modulation covers a broad range from the visible (450 nm) to the infrared (5 μm), which can be achieved only by rGO rather than pristine graphene films. The large broadband transmittance modulation is understood with DFT calculations, which suggest a decrease in interband transitions in the visible range as well as a reduced reflection in the IR range upon intercalation. We find that a larger interlayer distance in few-layer rGO results in a significant increase in transparency in the infrared region of the spectrum, in agreement with experimental results. Furthermore, a reduced plasma frequency in rGO compared to few-layer graphene is also important to understand the experimental results for broadband transparency in rGO. The broadband transmittance modulation of the CNT/rGO/CNT systems can potentially lead to electrochromic and thermal camouflage applications.

Ti2Au2C and Ti3Au2C2 formed by solid state reaction of gold with Ti2AlC and Ti3AlC2

Ti₂Au₂C and Ti₃Au₂C₂ formation by Au/Ti₂AlC and Au/Ti₃AlC₂ exchange-reactions imply thermodynamic guidelines for identifying materials where these reactions may occur.

Polytypic phase transitions in metal intercalated Bi2Se3

The temperature and concentration dependent phase diagrams of zero-valent copper, cobalt, and iron intercalated bismuth selenide are investigated using in situ transmission electron microscopy. Polytypic phase transitions associated with superlattice formation along with order-disorder transitions of the guest intercalant are determined. Dual-element intercalants of CuCo, CuFe, and CoFe-Bi₂Se₃ are also investigated. Hexagonal and striped domain formation consistent with two-dimensional ordering of the intercalant and Pokrovksy-Talapov theory is identified as a function of concentration. These studies provide a complete picture of the structural behavior of zero-valent metal intercalated Bi₂Se₃.

Vacancy-Induced Semiconductor-Insulator-Metal Transitions in Nonstoichiometric Nickel and Tungsten Oxides

Metal-insulator transitions in strongly correlated oxides induced by electrochemical charging have been attributed to formation of vacancy defects. However, the role of native defects in affecting these transitions is not clear. Here, we report a new type of phase transition in p-type, nonstoichiometric nickel oxide involving a semiconductor-to-insulator-to-metal transition along with the complete reversal of conductivity from p- to n-type at room temperature induced by electrochemical charging in a Li⁺-containing electrolyte. Direct observation of vacancy-ion interactions using in situ near-infrared photoluminescence spectroscopy show that the transition is a result of passivation of native nickel (cationic) vacancy defects and subsequent formation of oxygen (anionic) vacancy defects driven by Li⁺ insertion into the lattice. Changes in the oxidation states of nickel due to defect interactions probed by X-ray photoemission spectroscopy support the above conclusions. In contrast, n-type, nonstoichiometric tungsten oxide shows only insulator-to-metal transition, which is a result of oxygen vacancy formation. The defect-property correlations shown here in these model systems can be extended to other oxides.

Enhanced Air Stability in REPb3 (RE = Rare Earths) by Dimensional Reduction Mediated Valence Transition

We conceptually selected the compounds REPb3 (RE = Eu, Yb), which are unstable in air, and converted them to the stable materials in ambient conditions by the chemical processes of "nanoparticle formation" and "dimensional reduction". The nanoparticles and the bulk counterparts were synthesized by the solvothermal and high-frequency induction furnace heating methods, respectively. The reduction of the particle size led to the valence transition of the rare earth atom, which was monitored through magnetic susceptibility and X-ray absorption near edge spectroscopy (XANES) measurements. The stability was checked by X-ray diffraction and thermogravimetric analysis over a period of seven months in oxygen and argon atmospheres and confirmed by XANES. The nanoparticles showed outstanding stability toward aerial oxidation over a period of seven months compared to the bulk counterpart, as the latter one is more prone to the oxidation within a few days.

Dynamic Control of Optical Response in Layered Metal Chalcogenide Nanoplates

Tunable optical transitions in ultrathin layered 2-dimensional (2D) materials unveil the electronic structures of materials and provide exciting prospects for potential applications in optics and photonics. Here, we present our realization of dynamic optical modulation of layered metal chalcogenide nanoplates using ionic liquid (IL) gating over a wide spectral range. The IL gating significantly increased the tuning range of the Fermi level and, as a result, substantially altered the optical transitions in the nanoplates. Using heavily n-doped Bi2Se3 nanoplates, we substantially modulated the light transmission through the ultrathin layer. A tunable, high-transmission spectral window in the visible to near-infrared region has been observed due to simultaneous shifts of both the plasma edge and absorption edge of the material. On the other hand, optical response of multilayer MoSe2 flakes gated by IL has shown enhanced transmission in both positive and negative biases, which is consistent with their ambipolar electrical behavior. The electrically controlled optical property tuning in metal chalcogenide material systems provides new opportunities for potential applications, such as wide spectral range optical modulators, optical filters, and electrically controlled smart windows with extremely low material consumption.

Intercalation in two-dimensional transition metal chalcogenides

We review various exfoliation methods and extensive tuning of chemical and physical properties for 2D layered nanomaterials based on intercalation chemistry.

Li Intercalation in MoS2: In Situ Observation of Its Dynamics and Tuning Optical and Electrical Properties

Two-dimensional layered materials like MoS2 have shown promise for nanoelectronics and energy storage, both as monolayers and as bulk van der Waals crystals with tunable properties. Here we present a platform to tune the physical and chemical properties of nanoscale MoS2 by electrochemically inserting a foreign species (Li(+) ions) into their interlayer spacing. We discover substantial enhancement of light transmission (up to 90% in 4 nm thick lithiated MoS2) and electrical conductivity (more than 200×) in ultrathin (∼2-50 nm) MoS2 nanosheets after Li intercalation due to changes in band structure that reduce absorption upon intercalation and the injection of large amounts of free carriers. We also capture the first in situ optical observations of Li intercalation in MoS2 nanosheets, shedding light on the dynamics of the intercalation process and the associated spatial inhomogeneity and cycling-induced structural defects.

Sodium-Ion Intercalated Transparent Conductors with Printed Reduced Graphene Oxide Networks

In this work, we report for the first time that Na-ion intercalation of reduced graphene oxide (RGO) can significantly improve its printed network's performance as a transparent conductor. Unlike pristine graphene that inhibits Na-ion intercalation, the larger layer-layer distance of RGO allows Na-ion intercalation, leading to simultaneously much higher DC conductivity and higher optical transmittance. The typical increase of transmittance from 36% to 79% and decrease of sheet resistance from 83k to 311 Ohms/sq in the printed network was observed after Na-ion intercalation. Compared with Li-intercalated graphene, Na-ion intercalated RGO shows much better environmental stability, which is likely due to the self-terminating oxidation of Na ions on the RGO edges. This study demonstrated the great potential of metal-ion intercalation to improve the performance of printed RGO network for transparent conductor applications.

Two-dimensional layered chalcogenides: from rational synthesis to property control via orbital occupation and electron filling

Electron occupation of orbitals in two-dimensional (2D) layered materials controls the magnitude and anisotropy of the interatomic electron transfer and exerts a key influence on the chemical bonding modes of 2D layered lattices. Therefore, their orbital occupations are believed to be responsible for massive variations of the physical and chemical properties from electrocatalysis and energy storage, to charge density waves, superconductivity, spin-orbit coupling, and valleytronics. Especially in nanoscale structures such as nanoribbons, nanoplates, and nanoflakes, 2D layered materials provide opportunities to exploit new quantum phenomena. In this Account, we report our recent progress in the rational design and chemical, electrochemical, and electrical modulations of the physical and chemical properties of layered nanomaterials via modification of the electron occupation in their electronic structures. Here, we start with the growth and fabrication of a group of layered chalcogenides with varied orbital occupation (from 4d/5d electron configuration to 5p/6p electron configuration). The growth techniques include bottom-up methods, such as vapor-liquid-solid growth and vapor-solid growth, and top-down methods, such as mechanical exfoliation with tape and AFM tip scanning. Next, we demonstrate the experimental strategies for the tuning of the chemical potential (orbital occupation tuned with electron filling) and the resulting modulation of the electronic states of layered materials, such as electric-double-layer gating, electrochemical intercalation, and chemical intercalation with molecule and zerovalence metal species. Since the properties of layered chalcogenides are normally dominated by the specific band structure around which the chemical potential is sitting, their desired electronic states and properties can be modulated in a large range, showing unique phenomena including quantum electronic transport and extraordinary optical transmittance. As the most important part of this Account, we further demonstrate some representative examples for the tuning of catalytic, optical, electronic, and spintronic properties of 2D layered chalcogenides, where one can see not only edge-state induced enhancement of catalysis, quantum Aharonov-Bohm interference of the topological surface states, intercalation modulated extraordinary transmittance, and surface plasmonics but also external gating induced superconductivity and spin-coupled valley photocurrent. Since our findings reflect the critical influences of the electron filling of orbital occupation to the properties in 2D layered chalcogenides, we thus last highlight the importance and the prospective of orbital occupation in 2D layered materials for further exploring potential functionalized applications.