Raman spectroscopy as probe of nanometre-scale strain variations in graphene

Fast adaptive focusing confocal Raman microscopy for large-area two-dimensional materials

Large-area two-dimensional (2D) materials possess significant potential in the development of next generation semiconductor due to their unique physicochemical properties. Confocal Raman spectroscopy (CRM), a typical 2D material characterization method, has a limited effective measurement area owing to the restricted focus depth of the system and the less-than-ideal level of the substrate. We propose fast adaptive focusing confocal Raman microscopy (FAFCRM) to realize real-time focusing detection for large-area 2D materials. By observing spot changes on the charge coupled device (CCD) caused by placing an aperture in front of the CCD, the methodology gives a focusing resolution up to 100 nm per 60 μm without axial scanning. A graphene was measured over 25.6 mm × 25.6 mm area on focus through all the scanning. The research results provide new perspectives for non-destructive characterization of 2D materials at the inch level.

Surface-Enhanced Raman Scattering Using 2D Materials

The use of surface-enhanced Raman scattering (SERS) as a technique for detecting small amounts of (bio)chemical analytes has become increasingly popular in various fields. While gold and silver nanostructures have been extensively studied as SERS substrates, the availability of other types of substrates is currently expanding the applications of this spectroscopic method. Recently, researchers have begun exploring two-dimensional (2D) materials (e. g., graphene-like nanostructures) as substrates for SERS analysis. These materials offer unique optical properties, a well-defined structure, and the ability to modify their surface chemistry. As a contribution to advance this field, this concept article highlights the significance of understanding the chemical mechanism that underlies the experimental Raman spectra of chemisorbed molecules onto 2D materials' surfaces. Therefore, the article discusses recent advancements in fabricating substrates using 2D layered materials and the synergic effects of using their metallic composites for SERS applications. Additionally, it provides a new perspective on using Raman imaging in developing 2D materials as analytical platforms for Raman spectroscopy, an exciting emerging research area with significant potential.

Manipulating 2D Materials through Strain Engineering

This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.

Building a cm2scale CVD graphene-based gas sensor: modelling the kinetic with a three-site adsorption/desorption Langmuir model

In this article, we aim to develop and study a highly sensitive and selective cm2scale graphene-based gas sensor. We present the technology used to fabricate sensors which integrate monolayer chemical vapour deposition graphene: photolithography and transfer of layers. Characterization techniques (optical microscopy, AFM, micro-Raman spectroscopy, transport electrical measurements) ensure a diagnosis of graphene ribbons and allow good reproducibility of technological processes. We present the results of gas characterizations after a 200 ppm NO2exposure. We propose a novel approach for the modelling of the sensor response with a three-site adsorption/desorption Langmuir model. This innovative way of modelling the sensor response should provide a better understanding of the sensor's kinetic and help to overcome the long response time observed with graphene gas sensors.

Button shear testing for adhesion measurements of 2D materials

Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.

Uniform, Strain-Free, Large-Scale Graphene and h-BN Monolayers Enabled by Hydrogel Substrates

Translation of the unique properties of 2D monolayers from non-scalable micron-sized samples to macroscopic scale is a longstanding challenge obstructed by the substrate-induced strains, interface nonuniformities, and sample-to-sample variations inherent to the scalable fabrication methods. So far, the most successful strategies to reduce strain in graphene are the reduction of the interface roughness and lattice mismatch by using hexagonal boron nitride (h-BN), with the drawback of limited uniformity and applicability to other 2D monolayers, and liquid water, which is not compatible with electronic devices. This work demonstrates a new class of substrates based on hydrogels that overcome these limitations and excel h-BN and water substrates at strain relaxation enabling superiorly uniform and reproducible centimeter-sized sheets of unstrained monolayers. The ultimate strain relaxation and uniformity are rationalized by the extreme structural adaptability of the hydrogel surface owing to its high liquid content and low Young's modulus, and are universal to all 2D materials irrespective of their crystalline structure. Such platforms can be integrated into field effect transistors and demonstrate enhanced charge carrier mobilities in graphene. These results present a universal strategy for attaining uniform and strain-free sheets of 2D materials and underline the opportunities enabled by interfacing them with soft matter.

Covalently-Bonded Laminar Assembly of Van der Waals Semiconductors with Polymers: Toward High-Performance Flexible Devices

Van der Waals semiconductors (vdWS) offer superior mechanical and electrical properties and are promising for flexible microelectronics when combined with polymer substrates. However, the self-passivated vdWS surfaces and their weak adhesion to polymers tend to cause interfacial sliding and wrinkling, and thus, are still challenging the reliability of vdWS-based flexible devices. Here, an effective covalent vdWS-polymer lamination method with high stretch tolerance and excellent electronic performance is reported. Using molybdenum disulfide (MoS2 )and polydimethylsiloxane (PDMS) as a case study, gold-chalcogen bonding and mercapto silane bridges are leveraged. The resulting composite structures exhibit more uniform and stronger interfacial adhesion. This enhanced coupling also enables the observation of a theoretically predicted tension-induced band structure transition in MoS2 . Moreover, no obvious degradation in the devices' structural and electrical properties is identified after numerous mechanical cycle tests. This high-quality lamination enhances the reliability of vdWS-based flexible microelectronics, accelerating their practical applications in biomedical research and consumer electronics.

Infrared Resonance Raman of Bilayer Graphene: Signatures of Massive Fermions and Band Structure on the 2D Peak

Few-layer graphene possesses low-energy carriers that behave as massive Fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to 1.17 eV, we target these massive quasiparticles in the split bands close to the K point. The low excitation energy weakens some of the Raman processes that are resonant in the visible, and induces a clearer frequency-separation of the substructures of the resonance 2D peak in bi- and trilayer samples. We follow the excitation-energy dependence of the intensity of each substructure, and comparing experimental measurements on bilayer graphene with ab initio theoretical calculations, we trace back such modifications on the joint effects of probing the electronic dispersion close to the band splitting and enhancement of electron-phonon matrix elements.

Ligand Steric Profile Tunes the Reactivity of Indium Phosphide Clusters

Indium phosphide quantum dots have become an industrially relevant material for solid-state lighting and wide color gamut displays. The synthesis of indium phosphide quantum dots from indium carboxylates and tris(trimethylsilyl)phosphine (P(SiMe3)3) is understood to proceed through the formation of magic-sized clusters, with In37P20(O2CR)51 being the key isolable intermediate. The reactivity of the In37P20(O2CR)51 cluster is a vital parameter in controlling the conversion to quantum dots. Herein, we report structural perturbations of In37P20(O2CR)51 clusters induced by tuning the steric properties of a series of substituted phenylacetate ligands. This approach allows for control over reactivity with P(SiMe3)3, where meta-substituents enhance the susceptibility to ligand displacement, and para-substituents hinder phosphine diffusion to the core. Thermolysis studies show that with complete cluster dissolution, steric profile can modulate the nucleation period, resulting in a nanocrystal size dependence on ligand steric profile. The enhanced stability from ligand engineering also allows for the isolation and structural characterization by single-crystal X-ray diffraction of a new III-V magic-sized cluster with the formula In26P13(O2CR)39. This intermediate precedes the In37P20(O2CR)51 cluster on the InP QD reaction coordinate. The physical and electronic structure of this cluster are analyzed, providing new insight into previously unrecognized relationships between II-VI and III-V materials and the discrete growth of III-V cluster intermediates.

Graphene binding on black phosphorus enables high on/off ratios and mobility

Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >103 as well as a mobility of ∼8000 cm2 V-1 s-1 at room temperature, meeting the low-power criterion suggested by the International Roadmap for Devices and Systems.

Three-dimensional graphene on a nano-porous 4H-silicon carbide backbone: a novel material for food sensing applications

BACKGROUND

Sensors that are sensitive to volatile organic compounds, and thus able to monitor the conservation state of food, are precious because they work non-destructively and allow avoiding direct contact with the food, ensuring hygienic conditions. In particular, the monitoring of rancidity would solve a widespread issue in food storage.

RESULTS

The sensor discussed here is produced utilizing a novel three-dimensional arrangement of graphene, which is grown on a crystalline silicon carbide wafer previously porousified by chemical etching. This approach allows a very high surface-to-volume ratio. Furthermore, the structure of the sensor surface features a large number of edges, dangling bounds, and active sites, which make the sensor, on a chemically robust skeleton, chemically active, particularly to hydrogenated molecules. The interaction of the sensor with such compounds is read out by measuring the sensor resistance in a four-wire configuration. The sensor performance has been assessed on three hazelnut samples: sound, spoiled, and stink bug hazelnuts. A resistance variation of about ∆R = 0.13 ± 0.02 Ω between sound and damaged hazelnuts has been detected.

CONCLUSIONS

Our measurements confirm the ability of the sensor to discriminate between sound and damaged hazelnuts. The sensor signal is stable for days, providing the possibility to use this sensor for the monitoring of the storage state of fats and foods in general. © 2023 Society of Chemical Industry.

Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer

Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the next generation antenna systems and networks. Here, we propose a low-power consumption, small footprint building block for 6 G and 5 G new radio wireless transmission allowing broadband capacity (e.g., 10-100 Gb/s per link and beyond). We demonstrate a wireless datalink based on graphene, reaching setup limited sub-THz carrier frequency and multi-Gbit/s data rate. Our device consists of a graphene-based integrated optoelectronic mixer capable of mixing an optically generated reference oscillator approaching 100 GHz, with a baseband electrical signal. We report >96 GHz optoelectronic bandwidth and -44 dB upconversion efficiency with a footprint significantly smaller than those of state-of-the-art photonic transmitters (i.e., <0.1 mm2). These results are enabled by an integrated-photonic technology based on wafer-scale high-mobility graphene and pave the way towards the development of optoelectronics-based arrayed-antennas for millimeter-wave technology.

Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates

Controllable growth of two-dimensional (2D) single crystals on insulating substrates is the ultimate pursuit for realizing high-end applications in electronics and optoelectronics. However, for the most typical 2D insulator, hexagonal boron nitride (hBN), the production of a single-crystal monolayer on insulating substrates remains challenging. Here, we propose a methodology to realize the facile production of inch-sized single-crystal hBN monolayers on various insulating substrates by an atomic-scale stamp-like technique. The single-crystal Cu foils grown with hBN films can stick tightly (within 0.35 nm) to the insulating substrate at sub-melting temperature of Cu and extrude the hBN grown on the metallic surface onto the insulating substrate. Single-crystal hBN films can then be obtained by removing the Cu foil similar to the stamp process, regardless of the type or crystallinity of the insulating substrates. Our work will likely promote the manufacturing process of fully single-crystal 2D material-based devices and their applications.

Critical Point Drying of Graphene Field-Effect Transistors Improves Their Electric Transport Characteristics

A critical point drying (CPD) technique is reported with supercritical CO2 as a cleaning step for graphene field-effect transistors (GFETs) microfabricated on oxidized Si wafers, which results in an increase of the field-effect mobility and a decrease of the impurity doping. It is shown that the polymeric residues remaining on graphene after the transfer process and device microfabrication are significantly reduced after the CPD treatment. Moreover, the CPD effectively removes ambient adsorbates such as water therewith reducing the undesirable p-type doping of the GFETs. It is proposed that CPD of electronic, optoelectronic, and photonic devices based on 2D materials as a promising technique to recover their intrinsic properties after the microfabrication in a cleanroom and after storage at ambient conditions.

Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm^-1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm²/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction.

Silicon-Based On-Chip Tunable High-Q-Factor and Low-Power Fano Resonators with Graphene Nanoheaters

Tunable and low-power microcavities are essential for large-scale photonic integrated circuits. Thermal tuning, a convenient and stable tuning method, has been widely adopted in optical neural networks and quantum information processing. Recently, graphene thermal tuning has been demonstrated to be a power-efficient technique, as it does not require thick spacers to prevent light absorption. In this paper, a silicon-based on-chip Fano resonator with graphene nanoheaters is proposed and fabricated. This novel Fano structure is achieved by introducing a scattering block, and it can be easily fabricated in large quantities. Experimental results demonstrate that the resonator has the characteristics of a high quality factor (∼31,000) and low state-switching power (∼1 mW). The temporal responses of the microcavity exhibit qualified modulation speed with 9.8 μs rise time and 16.6 μs fall time. The thermal imaging and Raman spectroscopy of graphene at different biases were also measured to intuitively show that the tuning is derived from the joule heating effect of graphene. This work provides an alternative for future large-scale tunable and low-power-consumption optical networks, and has potential applications in optical filters and switches.

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

SiO₂ films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO₂ films. On the top of the graphene layer, either continuous HfO₂ or SiO₂ films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively. Micro-Raman spectroscopy confirmed the integrity of the graphene after the deposition processes of both the HfO₂ and SiO₂. Stacked nanostructures with graphene layers intermediating the SiO₂ and either the SiO₂ or HfO₂ insulator layers were devised as the resistive switching media between the top Ti and bottom TiN electrodes. The behavior of the devices was studied comparatively with and without graphene interlayers. The switching processes were attained in the devices supplied with graphene interlayers, whereas in the media consisting of the SiO₂-HfO₂ double layers only, the switching effect was not observed. In addition, the endurance characteristics were improved after the insertion of graphene between the wide band gap dielectric layers. Pre-annealing the Si/TiN/SiO₂ substrates before transferring the graphene further improved the performance.

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS₂. The strain and interface engineering of MoS₂/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS₂ on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS₂, the relative numerical changes of physical parameters of MoS₂ films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.

Ultraclean and Facile Patterning of CVD Graphene by a UV-Light-Assisted Dry Transfer Method

The synthesis of large-area graphene by the chemical vapor deposition (CVD) method is a mature technology; however, a transfer procedure is required to integrate CVD-grown graphene into a functional device. The reported methods for transferring graphene films cause different degrees of defects (cracking, rupture) and ion/polymer residues, which deteriorate or alter the electrical properties of as-grown graphene. Developing a reliable and fast transfer method that can maintain high-quality graphene remains a challenge. In this work, we employed UV light release tape (UV-RT) as the support layer to replace the frequently used thermal release tape (TRT) in a typical roll-to-roll dry transfer process. In this process, we used an easier-to-remove polymer as an adhesion layer to greatly reduce the strain and defects that occur during the transfer process. The cleanliness of graphene transferred by this method is above 99%, and the carrier mobility is 1.6 and 1.1 times higher than that obtained with conventional wet transfer and TRT transfer methods, respectively. UV illumination leads to facile and uniform release of the graphene film onto the target substrate, achieving one-step and selective patterning of graphene (feature size of <100 μm). The UV-assisted decomposition of the polymer molecular structure into small molecules enables a residue-free and ultraclean graphene surface. This proposed transfer method enables facile patterning of graphene and 2D films while maintaining high quality, which paves the way for versatile functional graphene applications.

Phonon-mediated room-temperature quantum Hall transport in graphene

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.

Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene

Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm2/(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.

Strain engineering of graphene on rigid substrates

Graphene with a large tensile strain is a promising candidate for the new "straintronics'' applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO₂/Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental studies and applications of two-dimensional materials.

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al₂O₃ (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications.

Experimental Observation of ABCB Stacked Tetralayer Graphene

In tetralayer graphene, three inequivalent layer stackings should exist; however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scattering-type scanning near-field optical microscopy and confocal Raman microscopy to identify and characterize domains of ABCB stacked tetralayer graphene. We differentiate between the three stacking sequences by addressing characteristic interband contributions in the optical conductivity between 0.28 and 0.56 eV with amplitude and phase-resolved near-field nanospectroscopy. By normalizing adjacent flakes to each other, we achieve good agreement between theory and experiment, allowing for the unambiguous assignment of ABCB domains in tetralayer graphene. These results establish near-field spectroscopy at the interband transitions as a semiquantitative tool, enabling the recognition of ABCB domains in tetralayer graphene flakes and, therefore, providing a basis to study correlation physics of this exciting phase.

Periodic Structural Defects in Graphene Sheets Engineered via Electron Irradiation

Artificially-induced defects in the lattice of graphene are a powerful tool for engineering the properties of the crystal, especially if organized in highly-ordered structures such as periodic arrays. A method to deterministically induce defects in graphene is to irradiate the crystal with low-energy (<20 keV) electrons delivered by a scanning electron microscope. However, the nanometric precision granted by the focused beam can be hindered by the pattern irradiation itself due to the small lateral separation among the elements, which can prevent the generation of sharp features. An accurate analysis of the achievable resolution is thus essential for practical applications. To this end, we investigated patterns generated by low-energy electron irradiation combining atomic force microscopy and micro-Raman spectroscopy measurements. We proved that it is possible to create well-defined periodic patterns with precision of a few tens of nanometers. We found that the defected lines are influenced by electrons back-scattered by the substrate, which limit the achievable resolution. We provided a model that takes into account such substrate effects. The findings of our study allow the design and easily accessible fabrication of graphene devices featuring complex defect engineering, with a remarkable impact on technologies exploiting the increased surface reactivity.

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO₂/Si exhibited high carrier mobility reaching up ~10,000 cm² V⁻¹ s⁻¹, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm² V⁻¹ s⁻¹. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.

In Situ Measurements of Strain Evolution in Graphene/Boron Nitride Heterostructures Using a Non-Destructive Raman Spectroscopy Approach

The mechanical properties of engineered van der Waals (vdW) 2D materials and heterostructures are critically important for their implementation into practical applications. Using a non-destructive Raman spectroscopy approach, this study investigates the strain evolution of single-layer graphene (SLGr) and few-layered boron nitride/graphene (FLBN/SLGr) heterostructures. The prepared 2D materials are synthesized via chemical vapor deposition (CVD) method and then transferred onto flexible polyethylene terephthalate (PET) substrates for subsequent strain measurements. For this study, a custom-built mechanical device-jig is designed and manufactured in-house to be used as an insert for the 3D piezoelectric stage of the Raman system. In situ investigation of the effects of applied strain in graphene detectable via Raman spectral data in characteristic bonds within SLGr and FLBN/SLGr heterostructures is carried out. The in situ strain evolution of the FLBN/SLGr heterostructures is obtained in the range of (0-0.5%) strain. It is found that, under the same strain, SLG exhibits a higher Raman shift in the 2D band as compared with FLBN/SLGr heterostructures. This research leads to a better understanding of strain dissipation in vertical 2D heterostacks, which could help improve the design and engineering of custom interfaces and, subsequently, control lattice structure and electronic properties. Moreover, this study can provide a new systematic approach for precise in situ strain assessment and measurements of other CVD-grown 2D materials and their heterostructures on a large scale for manufacturing a variety of future micro- and nano-scale devices on flexible substrates.

Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor

The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penetration of water vapor through graphene defects on Gr/Ge(001)/Si(001) samples leads to the oxidation of germanium, forming GeO2. The presence of trigonal GeO2 under graphene was identified by Raman and XRD measurements. The oxidation of Ge leads to the formation of blisters under the graphene layer. It is suggested that oxidation of Ge is connected with the dissociation of water molecules and penetration of OH molecules or O to the Ge surface. It has also been found that the formation of blisters of GeO2 leads to a dramatic increase in the intensity of the graphene Raman spectrum. The increase in the Raman signal intensity is most likely due to the screening of graphene by GeO2 from the Ge(001) surface.

The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes

Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO₂ interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.

Mechanisms of Interface Cleaning in Heterostructures Made from Polymer-Contaminated Graphene

Heterostructures obtained from layered assembly of 2D materials such as graphene and hexagonal boron nitride have potential in the development of new electronic devices. Whereas various materials techniques can now produce macroscopic scale graphene, the construction of similar size heterostructures with atomically clean interfaces is still unrealized. A primary barrier has been the inability to remove polymeric residues from the interfaces that arise between layers when fabricating heterostructures. Here, the interface cleaning problem of polymer-contaminated heterostructures is experimentally studied from an energy viewpoint. With this approach, it is established that the interface cleaning mechanism involves a combination of thermally activated polymer residue mobilization and their mechanical actuation. This framework allows a systematic approach for fabricating record large-area clean heterostructures from polymer-contaminated graphene. These heterostructures provide state-of-the-art electronic performance. This study opens new strategies for the scalable production of layered materials heterostructures.

Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g., turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1 ML Gr buffer) on a 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultraclean conditions for molecular beam epitaxy deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene. At low coverages, the deposition of Si produces large silicene sheets (some hundreds of nanometers large) attested by both AFM and SEM observations and the onset of a Raman peak at 560 cm^-1, very close to the theoretical value of 570 cm^-1 calculated for free-standing silicene. This vibrational mode at 560 cm^-1 represents the highest ever experimentally measured value and is representative of quasi-free-standing silicene with almost no interaction with inert nonmetal substrates. From a coverage rate of 1 ML, the silicene sheets disappear at the expense of 3D Si dendritic islands whose density, size, and thickness increase with the deposited thickness. From this coverage, the Raman mode assigned to quasi-free-standing silicene totally vanishes, and the 2D flakes of silicene are no longer observed by AFM. The experimental results are in very good agreement with the results of kinetic Monte Carlo simulations that rationalize the initial flake growth in solid-state dewetting conditions, followed by the growth of ridges surrounding and eventually covering the 2D flakes. A full description of the growth mechanism is given. This study, which covers a wide range of growth parameters, challenges recent results stating the impossibility to grow silicene on a carbon inert surface and is very promising for large-scale silicene growth. It shows that silicene growth can be achieved using perfectly controlled and ultraclean deposition conditions and an almost defect-free Gr substrate.

Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy

Hot carrier–based energy harvesting is critically implied in the performances of optoelectronic devices based on van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD). The way electron–hole couples initially photogenerated in the TMD are converted into an electric current in Gr is a controversial issue. In this work we identify the interlayer interaction occurring during the first picoseconds following photoexcitation as an energy transfer process that is much faster than (other) photogating phenomena implied in optoelectronic applications.

Intense light–matter interactions and unique structural and electrical properties make van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunneling transistors and flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics, and quantum light emitting devices (QLEDs), bright and narrow-line emitters using minimal amounts of active absorber material. The performance of such devices is critically ruled by interlayer interactions which are still poorly understood in many respects. Specifically, two classes of coupling mechanisms have been proposed, charge transfer (CT) and energy transfer (ET), but their relative efficiency and the underlying physics are open questions. Here, building on a time-resolved Raman scattering experiment, we determine the electronic temperature profile of Gr in response to TMD photoexcitation, tracking the picosecond dynamics of the G and 2D Raman bands. Compelling evidence for a dominant role of the ET process accomplished within a characteristic time of ∼4 ps is provided. Our results suggest the existence of an intermediate process between the observed picosecond ET and the generation of a net charge underlying the slower electric signals detected in optoelectronic applications.

Multidimensional Imaging Reveals Mechanisms Controlling Multimodal Label-Free Biosensing in Vertical 2DM-Heterostructures

Two-dimensional materials and their van der Waals heterostructures enable a large range of applications, including label-free biosensing. Lattice mismatch and work function difference in the heterostructure material result in strain and charge transfer, often varying at a nanometer scale, that influence device performance. In this work, a multidimensional optical imaging technique is developed in order to map subdiffractional distributions for doping and strain and understand the role of those for modulation of the electronic properties of the material. As an example, vertical heterostructures comprised of monolayer graphene and single-layer flakes of transition metal dichalcogenide MoS₂ were fabricated and used for biosensing. Herein, the optical label-free detection of doxorubicin, a common cancer drug, is reported via three independent optical detection channels (photoluminescence shift, Raman shift, and graphene enhanced Raman scattering). Non-uniform broadening of components of multimodal signal correlates with the statistical distribution of local optical properties of the heterostructure. Multidimensional nanoscale imaging allows one to reveal the physical origin for such a local response and propose the best strategy for the mitigation of materials variability and future device fabrication, enabling multiplexed biosensing.

Graphdiyne/Graphene/Graphdiyne Sandwiched Carbonaceous Anode for Potassium-Ion Batteries

Graphdiyne (GDY) has been considered as an appealing anode candidate for K-ion storage since its triangular pore channel, alkyne-rich structure, and large interlayer spacing would endow it with abundant active sites and ideal diffusion paths for K-ions. Nevertheless, the low surface area and disordered structure of bulk GDY typically lead to unsatisfied K storage performance. Herein, we have designed a GDY/graphene/GDY (GDY/Gr/GDY) sandwiched architecture affording a high surface area and fine quality throughout a van der Waals epitaxy strategy. As tested in a half-cell configuration, the GDY/Gr/GDY electrode exhibits better capacity output, rate capability, and cyclic stability as compared to the bare GDY counterpart. In situ electrochemical impedance spectroscopy/Raman spectroscopy/transmission electron microscopy are further applied to probe the K-ion storage feature and disclose the favorable reversibility of GDY/Gr/GDY electrode during repeated potassiation/depotassiation. A full-cell device comprising a GDY/Gr/GDY anode and a potassium Prussian blue cathode enables a high cycling stability, demonstrative of the promising potential of the GDY/Gr/GDY anode for K-ion batteries.

Ultra-clean high-mobility graphene on technologically relevant substrates

Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 cm² V^-1 s^-1 at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO₂/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene doping and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility μ_h up to ∼9000 cm² V^-1 s^-1 and electron mobility μ_e up to ∼8000 cm² V^-1 s^-1, with average values μ_h ∼ 7500 cm² V^-1 s^-1 and μ_e ∼ 6300 cm² V^-1 s^-1. The carrier mobility of ultraclean graphene reaches values nearly double than those measured in graphene processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics.

Tuning the magnetic properties of NiPS3 through organic-ion intercalation

Atomically thin van der Waals magnetic crystals are characterized by tunable magnetic properties related to their low dimensionality. While electrostatic gating has been used to tailor their magnetic response, chemical approaches like intercalation remain largely unexplored. Here, we demonstrate the manipulation of the magnetism in the van der Waals antiferromagnet NiPS₃ through the intercalation of different organic cations, inserted using an engineered two-step process. First, the electrochemical intercalation of tetrabutylammonium cations (TBA⁺) results in a ferrimagnetic hybrid compound displaying a transition temperature of 78 K, and characterized by a hysteretic behavior with finite remanence and coercivity. Then, TBA⁺ cations are replaced by cobaltocenium via an ion-exchange process, yielding a ferrimagnetic phase with higher transition temperature (98 K) and higher remanent magnetization. Importantly, we demonstrate that the intercalation and cation exchange processes can be carried out in bulk crystals and few-layer flakes, opening the way to the integration of intercalated magnetic materials in devices.

Exploring the mechanical properties of nanometer-thick elastic films through micro-drop impinging on large-area suspended graphene

In this work, the dependence of effective Young's modulus on the thickness of suspended graphene was confirmed through a drop impingement method. Large area suspended graphene (LSG) layers with a diameter of up to 400 μm and a nanometer thickness were prepared through transferring chemical vapor deposition grown graphene from copper substrates. 4, 8, and 12-layer LSG samples were found to be crumpled yet defect-free. The mechanical properties of LSG were first studied by observing its interaction with impinging droplets from an ink-jet nozzle. First, the effective Young's modulus was calculated by fitting the instant deformation captured by high speed photography within microseconds. Next, droplets deposited on LSG caused deformation and generated wrinkles and the effective Young's modulus was calculated from the number of wrinkles. The above methods yielded effective Young's modulus values ranging from 0.3 to 3.4 TPa. The results from these methods all indicated that the effective Young's modulus increases with the decreasing thickness or size of suspended graphene layers. Moreover, the crumpled LSG yields higher effective Young's modulus than ideal flat graphene. These comprehensive results from complementary methodologies with precise LSG thickness control down to the nanometer scale provide good evidence to resolve the debate on the thickness dependence of mechanical strength for LSG.

Nano-Physical Characterization of Chemical Vapor Deposition-Grown Monolayer Graphene for High Performance Electrode: Raman, Surface-Enhanced Raman Spectroscopy, and Electrostatic Force Microscopy Studies

To achieve high-quality chemical vapor deposition of monolayer graphene electrodes (CVD-MG), appropriate characterization at each fabrication step is essential. In this article, (1) Raman spectroscopy/microscopy are employed to unravel the contact effect between the CVD-MG and Cu foil in suspended/supported formation. (2) The Surface-Enhanced Raman spectroscopy (SERS) system is described, unveiling the presence of a z-directional radial breathing-like mode (RBLM) around 150 cm^-1, which matches the Raman shift of the radial breathing mode (RBM) from single-walled carbon nanotubes (SWCNTs) around 150 cm^-1. This result indicates the CVD-MG located between the Au NPs and Au film is not flat but comprises heterogeneous protrusions of some domains along the z-axis. Consequently, the degree of carrier mobility can be influenced, as the protruding domains result in lower carrier mobility due to flexural phonon-electron scattering. A strongly enhanced G-peak domain, ascribed to the presence of scrolled graphene nanoribbons (sGNRs), was observed, and there remains the possibility for the fabrication of sGNRs as sources of open bandgap devices. (3) Electrostatic force microscopy (EFM) is used for the measurement of surface charge distribution of graphene at the nanoscale and is crucial in substantiating the electrical performance of CVD-MG, which was influenced by the surface structure of the Cu foil. The ripple (RP) structures were determined using EFM correlated with Raman spectroscopy, exhibiting a higher tapping amplitude which was observed with structurally stable and hydrophobic RPs with a threading type than surrounding RPs. (4) To reduce the RP density and height, a plausible fabrication could be developed that controls the electrical properties of the CVD-MG by tuning the cooling rate.

Real-Space Observation of Emergent Complexity of Phase Evolution in Micrometer-Sized IrTe_{2} Crystals

We report complex behaviors in the phase evolution of transition-metal dichalcogenide IrTe_{2} thin flakes, captured with real-space observations using scanning Raman microscopy. The phase transition progresses via growth of a small number of domains, which is unlikely in statistical models that assume a macroscopic number of nucleation events. Consequently, the degree of phase evolution in the thin flakes is quite variable for the selected specimen and for a repeated measurement sequence, representing the emergence of complexity in the phase evolution. In the ∼20-μm^{3}-volume specimen, the complex phase evolution results in the emergent coexistence of a superconducting phase that originally requires chemical doping to become thermodynamically stable. These findings indicate that the complexity involved in phase evolution considerably affects the physical properties of a small-sized specimen.

Room-temperature operation of light-assisted NO2gas sensor based on GaN nanowires and graphene

We report the successful demonstration of a light-assisted NO₂gas sensor that operates at room temperature with high response. The gas sensor was fabricated with high-crystalline undoped-GaN nanowires (NWs) and graphene functioning as the light-absorbing medium and carrier channel, respectively. Exposure of the gas sensor to the NO₂concentration of 100 ppm at a light intensity of 1 mW cm^-2of a xenon lamp delivered a response of 16% at room temperature, which increased to 23% when the light intensity increased to 100 mW cm^-2. This value is higher than those previously reported for GaN-based NO₂gas sensors operating at room temperature. The room-temperature response of the gas sensor measured after six months was calculated to be 21.9%, which corresponds to 95% compared to the value obtained immediately after fabricating the devices. The response of the gas sensor after independently injecting NO₂, H₂S, H₂, CO, and CH₃CHO gases were measured to be 23, 5, 2.6, 2.2, and 1.7%, respectively. These results indicate that the gas sensor using GaN NWs and graphene provides high response, long-term stability, and good selectivity to NO₂gas at room temperature. In addition, the use of undoped-GaN NWs without using additional catalysts makes it possible to fabricate gas sensors that operate at room temperature simpler and better than conventional technologies.

Application of Molecular Vapour Deposited Al2O3 for Graphene-Based Biosensor Passivation and Improvements in Graphene Device Homogeneity

Graphene-based point-of-care (PoC) and chemical sensors can be fabricated using photolithographic processes at wafer-scale. However, these approaches are known to leave polymer residues on the graphene surface, which are difficult to remove completely. In addition, graphene growth and transfer processes can introduce defects into the graphene layer. Both defects and resist contamination can affect the homogeneity of graphene-based PoC sensors, leading to inconsistent device performance and unreliable sensing. Sensor reliability is also affected by the harsh chemical environments used for chemical functionalisation of graphene PoC sensors, which can degrade parts of the sensor device. Therefore, a reliable, wafer-scale method of passivation, which isolates the graphene from the rest of the device, protecting the less robust device features from any aggressive chemicals, must be devised. This work covers the application of molecular vapour deposition technology to create a dielectric passivation film that protects graphene-based biosensing devices from harsh chemicals. We utilise a previously reported "healing effect" of Al2O3 on graphene to reduce photoresist residue from the graphene surface and reduce the prevalence of graphene defects to improve graphene device homogeneity. The improvement in device consistency allows for more reliable, homogeneous graphene devices, that can be fabricated at wafer-scale for sensing and biosensing applications.

Nano-optical Imaging of In-Plane Homojunctions in Graphene and MoS2 van der Waals Heterostructures on Talc and SiO2

Understanding the impact of doping variations on the physical properties of two-dimensional materials is important for their application in electronic and optoelectronic devices. Here we report a nano-optical study on graphene and MoS₂ homojunctions by placing these two materials partly on top of a layered talc substrate, partly on top of an SiO₂ substrate. By analyzing the nano-Raman scattering from graphene and the nanophotoluminescense emission from MoS₂, two different doping zones are evident with sub-100 nm wide charge oscillations. The oscillations occur abruptly at the homojuction and extend over longer distances away from the interface, indicating imperfect deposition of the two-dimensional layer on the substrate. These results evidence fine and unexpected details of the homojuctions, important to build better electronic and optoelectronic devices.

Influence of the Underlying Substrate on the Physical Vapor Deposition of Zn-Phthalocyanine on Graphene

Graphene shows great promise not only as a highly conductive flexible and transparent electrode for fabricating novel device architectures but also as an ideal synthesis platform for studying fundamental growth mechanisms of various materials. In particular, directly depositing metal phthalocyanines (MPc's) on graphene is viewed as a compelling approach to improve the performance of organic photovoltaics and light-emitting diodes. In this work, we systematically investigate the ZnPc physical vapor deposition (PVD) on graphene either as-grown on Cu or as-transferred on various substrates including Si(100), C-plane sapphire, SiO2/Si, and h-BN. To better understand the effect of the substrate on the ZnPc structure and morphology, we also compare the ZnPc growth on highly crystalline single- and multilayer graphene. The experiments show that, for identical deposition conditions, ZnPc exhibits various morphologies such as high-aspect-ratio nanowires or a continuous film when changing the substrate supporting graphene. ZnPc morphology is also found to transition from a thin film to a nanowire structure when increasing the number of graphene layers. Our observations suggest that substrate-induced changes in graphene affect the adsorption, surface diffusion, and arrangement of ZnPc molecules. This study provides clear guidelines to control MPc crystallinity, morphology, and molecular orientations which drastically influence the (opto)electronic properties.

Strain Characterization in Two-Dimensional Crystals

Two-dimensional (2D) crystals provides a material platform to explore the physics and chemistry at the single-atom scale, where surface characterization techniques can be applied straightforwardly. Recently there have been emerging interests in engineering materials through structural deformation or transformation. The strain field offers crucial information of lattice distortion and phase transformation in the native state or under external perturbation. Example problems with significance in science and engineering include the role of defects and dislocations in modulating material behaviors, and the process of fracture, where remarkable strain is built up in a local region, leading to the breakdown of materials. Strain is well defined in the continuum limit to measure the deformation, which can be alternatively calculated from the arrangement of atoms in discrete lattices through methods such as geometrical phase analysis from transmission electron imaging, bond distortion or virial stress from atomic structures obtained from molecular simulations. In this paper, we assess the accuracy of these methods in quantifying the strain field in 2D crystals through a number of examples, with a focus on their localized features at material imperfections. The sources of errors are discussed, providing a reference for reliable strain mapping.

Ultrafast Photoconductivity and Terahertz Vibrational Dynamics in Double-Helix SnIP Nanowires

Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm²   V^-1 s^-1 along the double-helix axis and a hole mobility of 238 cm²   V^-1 s^-1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 10¹⁸  cm^-3 . The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications.

Graphene Bioelectronic Nose for the Detection of Odorants with Human Olfactory Receptor 2AG1

A real-time sensor for the detection of amyl butyrate (AB) utilising human olfactory receptor 2AG1 (OR2AG1), a G-protein coupled receptor (GPCR) consisting of seven transmembrane domains, immobilized onto a graphene resistor is demonstrated. Using CVD graphene as the sensor platform, allows greater potential for more sensitive detection than similar sensors based on carbon nanotubes, gold or graphene oxide platforms. A specific graphene resistor sensor was fabricated and modified via non-covalent π–π stacking of 1,5 diaminonaphthalene (DAN) onto the graphene channel, and subsequent anchoring of the OR2AG1 receptor to the DAN molecule using glutaraldehyde coupling. Binding between the target odorant, amyl butyrate, and the OR2AG1 receptor protein generated a change in resistance of the graphene resistor sensor. The functionalized graphene resistor sensors exhibited a linear sensor response between 0.1–500 pM and high selectively towards amyl butyrate, with a sensitivity as low as 500 fM, whilst control measurements using non-specific esters, produced a negligible sensor response. The approach described here provides an alternative sensing platform that can be used in bioelectronic nose applications.

Abnormal Raman Characteristics of Graphene Originating from Contact Interface Inhomogeneity

The Raman peak position shift rate per strain (RSS) coefficient of graphene is crucial for quantitative strain measurement by Raman spectroscopy. Despite its essential role, the experimentally measured RSS values are found to be highly scattered and many times significantly lower than the theoretical prediction. Here, using in situ Raman spectroscopy with a tensile test system, we resolve this controversy by examining the Raman characteristics of graphene derived from chemical vapor deposition (CVD) transferred on polymer substrates. Our experiments show that the Raman 2D-peak position of CVD graphene can shift nonlinearly with applied strain, in contrast to its intrinsically linear trait. More importantly, the resultant RSS coefficient at the steady state is much lower than the theoretical prediction. By analyzing atomic force microscopy (AFM) phase images and full width at half-maximum (FWHM) of Raman spectra, we attribute the abnormal behavior to nanometer-scale inhomogeneity of the graphene/substrate contact interface. Assisted by a simplified discrete interface slip model, we correlate the evolution of nanometer-scale inhomogeneity with that of the apparent Raman response. The theoretical model provides a useful tool for understanding and optimizing the contact interface behavior of various two-dimensional materials on substrates; the revealed mechanism is critical for correct interpretation of data obtained by Raman or any other spectroscopies based on homogenized laser signals.

Electrical Control over Phonon Polarization in Strained Graphene

We explore the tunability of the phonon polarization in suspended uniaxially strained graphene by magneto-phonon resonances. The uniaxial strain lifts the degeneracy of the LO and TO phonons, yielding two cross-linearly polarized phonon modes and a splitting of the Raman G peak. We utilize the strong electron-phonon coupling in graphene and the off-resonant coupling to a magneto-phonon resonance to induce a gate-tunable circular phonon dichroism. This, together with the strain-induced splitting of the G peak, allows us to controllably tune the two linearly polarized G mode phonons into circular phonon modes. We are able to achieve a circular phonon polarization of up to 40% purely by electrostatic fields and can reverse its sign by tuning from electron to hole doping. This provides unprecedented electrostatic control over the angular momentum of phonons, which paves the way toward phononic applications.