Charge-order fluctuations in one-dimensional silicides

van der Waals Engineering of Charge Density Waves in One-Dimensional Nb6Te6 Nanowires

One-dimensional (1D) systems have played a crucial role in the development of fundamental physics and practical applications. Recently, transition metal monochalcogenide (TMM) wires based on molybdenum (Mo) and tungsten (W) have emerged as promising platforms for investigating 1D physics in pure van der Waals (vdW) platforms. Here, we report on the bottom-up fabrication of Nb6Te6 wires down to the single-wire limit. The unique properties of Nb6Te6 single wire enable the realization of 1D charge density wave (CDW) phases in an isolated single TMM wire. Moreover, we revealed the appealing regulation of 1D CDW orders by van der Waals interactions at either the 1D-2D interface (i.e., rotation of a single wire along its wire axis) or the 1D-1D interface. Two rotation angles (30° and 0°) give rise to 3 × 1 and zigzag chain CDW morphologies, respectively, which exhibit pronounced differences in atomic displacement by a factor of 2. The interwire vdW coupling overwhelms its counterpart at the 1D-2D interface, thus locking the rotation angle (at 0°) as well as the interwire atomic registries. In contrast, interestingly, the phases of the charge oscillations are independent of the adjacent wires. The ability to tailor 1D charge orders provides a crucial addition to the toll set of vdW integrations beyond two-dimensional materials.

Observations of Charge-Density-Wave States in W6Te6 Wires

Determining the electronic ground state of a one-dimensional system is crucial to understanding the underlying physics of electronic behavior. Here, we demonstrate the discovery of charge-density wave states in few-wire W6Te6 arrays using scanning tunneling microscopy/spectroscopy. We directly visualize incommensurate charge orders, energy gaps with prominent coherence peaks, and the picometer-scale lattice distortion in nearly disorder-free double-wire systems, thereby demonstrating the existence of Peierls-type charge density waves. In the presence of disorder-induced charge order fluctuations, the coherence peaks resulting from phase correlation disappear and gradually transform the system into the pseudogap states. The power-law zero-bias anomaly and quasi-particle interference analysis further suggest the Tomonaga-Luttinger liquid behavior in such pseudogap region. In addition, we explicitly determined the evolution of the CDW energy gap as a function of stacking-wire numbers. The present study demonstrates the existence of electron-phonon interactions in few-wire W6Te6 that can be tuned by disorders and van der Waals stacking.

Presolidification in Eutectic Droplets

Evidence of presolidification, the counterpart to premelting, is reported. Near the eutectic temperature, T_{C}, the propagation direction of thermal gradient driven motion of eutectic Ge-Pt droplets on Ge(110) is determined by presolidification. Well above T_{C}, the micron-sized droplets move towards the hottest location at the substrate, irrespective of crystalline direction. At 90 K above T_{C}, a strong, unanticipated preference for propagation along the substrate [001] azimuth suddenly emerges, which is attributed to presolidification at the liquid-solid interface. The propagation along [001] is accompanied by a distinct change in shape from compact to elongated along [001].

Z3 Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface

An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces, but the nature of its low-temperature phases has been puzzling for last two decades. Here, we unambiguously identify the low-temperature structural distortion of this surface using high-resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains, are found to be strongly buckled, every third atom down, forming trimer unit cells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z₃ topology, making it possible to exploit topological phases and excitations. The tunneling current was found to substantially lower the energy barrier between three degenerate CDW states, which induces a dynamically fluctuating CDW at very low temperature.

Spectroscopic Analysis of Rare-Earth Silicide Structures on the Si(111) Surface

Two-dimensional rare-earth silicide layers deposited on silicon substrates have been intensively investigated in the last decade, as they can be exploited both as Ohmic contacts or as photodetectors, depending on the substrate doping. In this study, we characterize rare-earth silicide layers on the Si(111) surface by a spectroscopic analysis. In detail, we combine Raman and reflectance anisotropy spectroscopy (RAS) with first-principles calculations in the framework of the density functional theory. RAS suggests a weakly isotropic surface, and Raman spectroscopy reveals the presence of surface localized phonons. Atomistic calculations allow to assign the detected Raman peaks to phonon modes localized at the silicide layer. The good agreement between the calculations and the measurements provides a strong argument for the employed structural model.

Enforced Long-Range Order in 1D Wires by Coupling to Higher Dimensions

One-dimensional wires are known to be inherently unstable at finite temperature. Here, we show that long-range order of atomic Au double chains adsorbed on a Si(553) surface is not only stabilized by interaction with the substrate, but spontaneous self-healing of structural defects is actually enforced by the adsorption of atomic species such as Au or H. This is true even for random adsorbate distribution. Combining atomistic models within density functional theory with low energy electron diffraction and high-resolution electron energy loss spectroscopy, we demonstrate that this apparently counterintuitive behavior is mainly caused by adsorption-induced band filling of modified surface bands, i.e., by the strong electronic correlation throughout the whole terrace. Although adsorption preferably occurs at the step edge, it enhances the dimerization and the stiffness of the Au dimers. Thus, the intertwinement of quasi-1D properties with delocalized 2D effects enforces the atomic wire order.

Precise Tuning of Band Structures and Electron Correlations by van der Waals Stacking of One-dimensional W6Te6 Wires

Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W₆Te₆ wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W₆Te₆ wire is a 1D semiconductor with a band gap of ∼60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga-Luttinger liquid characteristics with the correlation parameter g varying from g = 0.086 for biwire to g = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (g = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.

Anisotropic 2D metallicity: plasmons in Ge(1 0 0)-Au

The low-energy plasmonic excitations of the Ge(0 0 1)-Au close to one monolayer coverage of Au were investigated by momentum-resolved high resolution electron energy loss spectroscopy. A very weak plasmonic loss was identified dispersing along the chain direction of the [Formula: see text] formed at these Au coverages. The measured dispersion was compared with the Tomonaga-Luttinger-liquid (TLL) model and with a model for an anisotropic Fermi liquid. Using the TLL model both for single and arrays of wires, no consistent picture turned up that could describe all available data. On the contrary, a quasi-one-dimensional model of a confined 2D electron gas gave a satisfactorily consistent description of the data. From these results for the collective low-energy excitations we conclude that the Ge(0 0 1)-Au system is reasonably well described by a strongly anisotropic 2D Fermi liquid, but is incompatible with a TLL.

Atomic structures of self-assembled epitaxially grown GdSi2 nanowires on Si(001) by STM

Self-assembled rare-earth (RE) silicide nanowires (NWs) on semiconductor surfaces are considered as good candidates for creating and investigating one-dimensional electron systems because of their exceptionally anisotropic growth behavior and metallic property. While detailed atomic structures are essential to understand electronic properties of these NWs, there have been only few successful observations of atomic structures with microscopy and reliable structure models are lacking. Here, we reinvestigate gadolinium silicide NWs with high resolution scanning tunneling microscopy (STM). We observe several different structures of Gd silicide NWs depending systematically on their widths, which consist of two distinct structural elements along the wires. The structure of a wide wire can be understood from that of a two dimensional silicide. Based on these STM observations, we propose new structure models of Gd silicide NWs.

On the diffraction pattern of bundled rare-earth silicide nanowires on Si(0 0 1)

Motivated by the complex diffraction pattern observed for bundled rare-earth silicide nanowires on the Si(0 0 1) surface, we investigate the influence of the width and the spacing distribution of the nanowires on the diffraction pattern. The diffraction pattern of the bundled rare-earth silicide nanowires is analyzed by the binary surface technique applying a kinematic approach to diffraction. Assuming a categorical distribution for the (individual) nanowire size and a Poisson distribution for the size of the spacing between adjacent nanowire-bundles, we are able to determine the parameters of these distributions and derive an expression for the distribution of the nanowire-bundle size. Additionally, the comparison of our simulations to the experimental diffraction pattern reveal that a (1  ×  1)-periodicity on top of the nanowires has to be assumed for a good match.

Electron Quantization in Broken Atomic Wires

We demonstrate using scanning tunneling microscopy and spectroscopy the electron quantization within metallic Au atomic wires self-assembled on a Si(111) surface and segmented by adatom impurities. The local electronic states of wire segments with a length up to 10 nm are investigated as terminated by two neighboring Si adatoms. One-dimensional (1D) quantum well states are well resolved by their spatial distributions and the inverse-length-square dependence in their energies. The quantization also results in the quantum oscillation of the conductance at Fermi level. The present approach provides a new and convenient platform to investigate 1D quantum phenomena with atomic precision.

Polaronic transport and current blockades in epitaxial silicide nanowires and nanowire arrays

Crystalline micrometer-long YSi2 nanowires with cross sections as small as 1 × 0.5 nm(2) can be grown on the Si(001) surface. Their extreme aspect ratios make electron conduction within these nanowires almost ideally one-dimensional, while their compatibility with the silicon platform suggests application as metallic interconnect in Si-based nanoelectronic devices. Here we combine bottom-up epitaxial wire synthesis in ultrahigh vacuum with top-down miniaturization of the electrical measurement probes to elucidate the electronic conduction mechanism of both individual wires and arrays of nanowires. Temperature-dependent transport through individual nanowires is indicative of thermally assisted tunneling of small polarons between atomic-scale defect centers. In-depth analysis of complex wire networks emphasize significant electronic crosstalk between the nanowires due to the long-range Coulomb fields associated with polaronic charge fluctuations. This work establishes a semiquantitative correlation between the density and distributions of atomic-scale defects and resulting current-voltage characteristics of nanoscale network devices.

Structure and growth of quasi-one-dimensional YSi2 nanophases on Si(100)

Quasi-one-dimensional YSi(2) nanostructures are formed via self-assembly on the Si(100) surface. These epitaxial nanowires are metastable and their formation strongly depends on the growth parameters. Here, we explore the various stages of yttrium silicide formation over a range of metal coverages and growth temperatures, and establish a rudimentary phase diagram for these novel and often coexisting nanophases. We identify, in addition to previously identified stoichiometric wires, several new nanowire systems. These nanowires exhibit a variety of surface reconstructions, which sometimes coexist on a single wire. From a comparison of scanning tunneling microscopy images, tunneling spectra, and first-principles density functional theory calculations, we determine that these surface reconstructions arise from local orderings of yttrium vacancies. Nanowires often agglomerate into nanowire bundles, the thinnest of which are formed from single wire pairs. The calculations show that such bundles are energetically favored compared to well-separated single wires. Thicker bundles are formed at slightly higher temperature. They extend over several microns, forming a robust network of conducting wires that could possibly be employed in nanodevice applications.

Metallic rare-earth silicide nanowires on silicon surfaces

The formation, atomic structure, and electronic properties of self-assembled rare-earth silicide nanowires on silicon surfaces were studied by scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. Metallic dysprosium and erbium silicide nanowires were observed on both the Si(001) and Si(557) surfaces. It was found that they consist of hexagonal rare-earth disilicides for both surface orientations. On Si(001), the nanowires are characterized by a one-dimensional band structure, while the electronic dispersion is two-dimensional for the nanowires formed on Si(557). This behavior is explained by the different orientations of the hexagonal c axis of the silicide leading to different conditions for the carrier confinement. By considering this carrier confinement it is demonstrated how the one-dimensional band structure of the nanowires on Si(001) can be derived from the two-dimensional one of the silicide monolayer on Si(111).

Vapor-liquid-solid growth of endotaxial semiconductor nanowires

Free-standing and in-plane lateral nanowires (NWs) grown by the vapor-liquid-solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in silicon substrates by tuning the directional movement of the catalyst in the substrates. The location of the SiGe NWs can be controlled by the SiO(2) pattern on the silicon surface. By varying the growth conditions, the proportion of Ge in the obtained NWs can also be tuned. This approach opens up an opportunity for the spatial control of the NW growth in substrates and can potentially broaden the applications of NWs in new advanced fields.

Correlating electronic transport to atomic structures in self-assembled quantum wires

Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi(2) are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale.

Controlling the width of self-assembled dysprosium silicide nanowires on the Si(001) surface

We present STM data that show that it is possible to use a metal induced 2 × 7 reconstruction of Si(001) to narrow the width distribution of Dy silicide nanowires. This behavior is distinct from the effect of the 7 × 7 reconstruction on the Si(111) surface, where the 7 × 7 serves as a static template and the deposited metal avoids the unit cell boundaries on the substrate. In this case, the 2 × 7 is a dynamic template, and the nanowires nucleate at anti-phase boundaries between 2 × 7 reconstruction domains.

Structural and chemical properties of gold rare earth disilicide core-shell nanowires

Clear understanding of the relationship between electronic structure and chemical activity will aid in the rational design of nanocatalysts. Core-shell Au-coated dysprosium and yttrium disilicide nanowires provide a model atomic scale system to understand how charges that transfer across interfaces affect other electronic properties and in turn surface activities toward adsorbates. Scanning tunneling microscopy data demonstrate self-organized growth of Au-coated DySi₂ nanowires with a nanometer feature size on Si(001), and Kelvin probe force microscopy data measure a reduction of work function that is explained in terms of charge transfer. Density functional theory calculations predict the preferential adsorption site and segregation path of Au adatoms on Si(001) and YSi₂. The chemical properties of Au-YSi₂ nanowires are then discussed in light of charge density, density of states, and adsorption energy of CO molecules.

Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

The complex interplay between the electron and lattice degrees of freedom produces multiple nearly degenerate electronic states in correlated electron materials. The competition between these degenerate electronic states largely determines the functionalities of the system, but the invoked mechanism remains in debate. By imaging phase domains with electron microscopy and interrogating individual domains in situ via electron transport spectroscopy in double-layered Sr(3)(Ru(1-x)Mn(x))(2)O(7) (x = 0 and 0.2), we show in real-space that the microscopic phase competition and the Mott-type metal-insulator transition are extremely sensitive to applied mechanical stress. The revealed dynamic phase evolution with applied stress provides the first direct evidence for the important role of strain effect in both phase separation and Mott metal-insulator transition due to strong electron-lattice coupling in correlated systems.

Structure of YSi(2) nanowires from scanning tunneling spectroscopy and first principles

Exceptionally long and uniform YSi(2) nanowires are formed via self-assembly on Si(001). The in-plane width of the thinnest wires is known to be quantized in odd multiples of the silicon lattice constant. Here, we identify a class of nanowires that violates the "odd multiple" rule. The structure of the thinnest wire in this category is determined by comparing scanning tunneling spectroscopy measurements with the calculated surface density of states of candidate models by means of the Pendry R-factor analysis. The relative stability of the odd and even wire systems is analyzed via first-principles calculations.

Giant kink in electron dispersion of strongly coupled lead nanowires

Our photoelectron spectroscopy study shows a giant kink in the electron dispersion, a sign of high-energy manybody interactions of electrons, in a well-ordered Pb nanowire array self-assembled on a silicon substrate. We show that the unique electronic band structure due to the strong lateral coupling and the atomic structure of the nanowires drives an enhanced manybody interaction for kinked electron dispersion. The major giant kink mechanisms discussed previously, the magnetic and plasmonic excitations, are not relevant in the present system, supporting the recent kink theory based purely on electron-electron correlation. This suggests that tailored electronic band structures in nano array systems can provide unprecedented ways to study manybody interactions of electrons.

Morphological work function dependence of rare-earth disilicide metal nanostructures

The work functions of various DySi(2-x) nanostructures epitaxially grown on a Si(001) surface were correlated with the structure using high-resolution Kelvin probe force microscopy and scanning tunneling microscopy in ultrahigh vacuum. Dy adatoms induce a surface dipole on Si(001) that increases the surface potential from 0.26 to 0.42 eV with respect to 2 x 1 reconstructed Si(001). DySi(2-x) nanowires showed a 0.2-0.23 eV lower work function than DySi(2-x) nanoislands, which can be attributed to confinement of electrons along the surface normal that induces a surface dipole when the film thickness approaches the Fermi wavelength. The ability to tune the work function of metal nanostructures should be useful for understanding how electronic structure affects catalytic activity.