Ferroelastic switching for nanoscale non-volatile magnetoelectric devices

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.

Designing dynamic coordination bonds in polar hybrid crystals for a high-temperature ferroelastic transition

Ferroelastic materials have gained widespread attention as promising candidates for mechanical switches, shape memory, and information processing. Their phase-transition mechanisms usually originate from conventional order-disorder and/or displacive types, while those involving dynamic coordination bonds are still scarce. Herein, based on a strategic molecular design of organic cations, we report three new polar hybrid crystals with a generic formula of AA'RbBiCl6 (A = A' = Me3SO+ for 1; A = Me3SO+ and A' = Me4N+ for 2; A = A' = Me3NNH2+ for 3). Their A-site cations link to the [RbBiCl6]n2n- inorganic framework with lon topology through Rb-O/N coordination bonds, while their significantly different interactions between A'-site cations and inorganic frameworks provide distinct phase-transition behaviour. In detail, the strongly coordinative A'-site Me3SO+ cations prevent 1 from a structural phase transition, while coordinatively free A'-site Me4N+ cations trigger a conventional order-disorder ferroelastic transition at 247 K in 2, accompanied by a latent heat of 0.63 J g-1 and a usual "high → low" second-harmonic-generation (SHG) switch. Interestingly, the A'-site Me3NNH2+ cations in 3 reveal unusual dynamic coordination bonds, driving a high-temperature ferroelastic transition at 369 K with a large latent heat of 18.34 J g-1 and an unusual "low → high" SHG-switching behaviour. This work provides an effective molecular assembly strategy to establish dynamic coordination bonds in a new type of host-guest model and opens an avenue for designing advanced ferroelastic multifunctional materials.

Large off-diagonal magnetoelectricity in a triangular Co2+-based collinear antiferromagnet

Magnetic toroidicity is an uncommon type of magnetic structure in solid-state materials. Here, we experimentally demonstrate that collinear spins in a material with R-3 lattice symmetry can host a significant magnetic toroidicity, even parallel to the ordered spins. Taking advantage of a single crystal sample of CoTe6O13 with an R-3 space group and a Co2+ triangular sublattice, temperature-dependent magnetic, thermodynamic, and neutron diffraction results reveal A-type antiferromagnetic order below 19.5 K, with magnetic point group -3' and k = (0,0,0). Our symmetry analysis suggests that the missing mirror symmetry in the lattice could lead to the local spin canting for a toroidal moment along the c axis. Experimentally, we observe a large off-diagonal magnetoelectric coefficient of 41.2 ps/m that evidences the magnetic toroidicity. In addition, the paramagnetic state exhibits a large effective moment per Co2+, indicating that the magnetic moment in CoTe6O13 has a significant orbital contribution. CoTe6O13 embodies an excellent opportunity for the study of next-generation functional magnetoelectric materials.

Visualizing the Interfacial Chemistry in Multivalent Metal Anodes by Transmission Electron Microscopy

Multivalent metal batteries (MMBs) have been considered potentially high-energy and low-cost alternatives to commercial Li-ion batteries, thus attracting tremendous research interest for energy-storage applications. However, the plating and stripping of multivalent metals (i.e., Zn, Ca, Mg) suffer from low Coulombic efficiencies and short cycle life, which are largely rooted in the unstable solid electrolyte interphase. Apart from exploring new electrolytes or artificial layers for robust interphases, fundamental works on deciphering interfacial chemistry have also been conducted. This work is dedicated to summarizing the state-of-the-art advances in understanding the interphases for multivalent metal anodes revealed by transmission electron microscopy (TEM) methods. Operando and cryogenic TEM with high spatial and temporal resolutions realize the dynamic visualization of the vulnerable chemical structures in interphase layers. Following a scrutinization of the interphases on different metal anodes, we elucidate their features for appealing multivalent metal anodes. Finally, perspectives are proposed for the remaining issues on analyzing and regulating interphases for practical MMBs.

Facile Control of Ferroelectricity Driven by Ingenious Interaction Engineering

Construction of ferroelectric and optimization of macroscopic polarization has attracted tremendous attention for next generation light weight and flexible devices, which brings fundamental vitality for molecular ferroelectrics. However, effective molecular tailoring toward cations makes ferroelectric synthesis and modification relatively elaborate. Here, the study proposes a facile method to realize triggering and optimization of ferroelectricity. The experimental and theoretical investigation reveals that orientation and alignment of polar cations, dominated factors in molecular ferroelectrics, can be controlled by easily processed anionic modification. In one respect, ferroelectricity is induced by strengthened intermolecular interaction. Moreover, ≈50% of microscopic polarization enhancement (from 8.07 to 11.68 µC cm-2 ) and doubling of equivalent polarization direction (from 4 to 8) are realized in resultant ferroelectric FEtQ2ZnBrI3 (FEQZBI, FEtQ = N-fluoroethyl-quinuclidine). The work offers a totally novel platform for control of ferroelectricity in organic-inorganic hybrid ferroelectrics and a deep insight of structure-property correlations.

An anomalous ferroelastic phase transition arising from an unusual cis-/anti-conformational reversal of polar organic cations

Hybrid ferroelastics have attracted increasing attention for their potential application as mechanical switches. The sporadically documented anomalous ferroelastic phase transitions, i.e., ferroelasticity that appears at a high-temperature phase rather than a low-temperature phase, are of particular interest but are not well understood at the molecular level. By judiciously choosing a polar and flexible organic cation (Me₂NH(CH₂)₂Br⁺) with cis-/anti- conformations as an A-site component, we obtained two new polar hybrid ferroelastics, A₂[MBr₆] (M = Te for 1 and Sn for 2). These materials undergo distinct thermal-induced ferroelastic phase transitions. The larger [TeBr₆]^2- anions anchor the adjacent organic cations well and essentially endow 1 with a conventional ferroelastic transition (P2₁ → Pm2₁n) arising from a common order-disorder transition of organic cations without conformational changes. Moreover, the smaller [SnBr₆]^2- anions can interact with the adjacent organic cations in energetically similar sets of intermolecular interactions, enabling 2 to undergo an anomalous ferroelastic phase transition (P2₁2₁2₁ → P2₁) arising from an unusual cis-/anti-conformational reversal of organic cations. These two instances demonstrate the importance of the delicate balance of intermolecular interactions for inducing anomalous ferroelastic phase transitions. The findings here provide important insights for seeking new multifunctional ferroelastic materials.

Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO3 Devices with an Oxide-Metal Interface

Electric transport in the charged domain wall (CDW) region has emerged as a promising phenomenon for the development of next-generation ferro-resistive memory with ultrahigh data storage density. However, accurately measuring the conductivity of CDWs induced by polarization reversal remains challenging due to the polarization modulation of the Schottky barrier at the thin film-electrode interface, which could partially contribute to the collected "on" current of the device. Here, we propose carefully selecting an electrode that can suppress the effect of interfacial barrier modulation induced by polarization reversal, allowing the collected current mainly from the conductive CDWs. The experiment was conducted on epitaxial BiFeO₃(001) thin-film devices with vertical and horizontal geometries. Piezo-response force microscopy scanning showed the local polarization experienced 180° rotation to form CDWs under the vertical electric field. However, devices with SrRuO₃ epitaxial top electrodes still exhibit an interfacial barrier-dominated diode behavior, with the "on" current proportional to the electrode area. To identify the CDW current, more interfacial defects were introduced by the deposition of Pt top electrodes, which significantly enhanced charge injection for the compensation of the reversed polarization driven by the electric field, leading to the suppressed polarization modulation of the Schottky barrier height. It was observed that the current flow through Pt electrodes is significantly lower compared to that of SRO electrodes and appears to be primarily influenced by the electrode perimeter instead of the electrode area, indicating CDW-dominated conduction behavior in these devices. Planar nanodevices were further fabricated to support the quantitative investigation of the Pt electrode size-dependent "on" current with a linear fit of the current magnitude versus the CDW cross-sectional area. This work constitutes an essential part of understanding the role of the CDW current in ferro-resistive memory devices.

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias

BiFeO₃, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO₃ are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO₃ remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO₃ thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO₃ thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO₃ thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.

Theoretical insight of origin of Rashba-Dresselhaus effect in tetragonal and rhombohedral phases of BiFeO3

The inclusion of the spin-orbit coupling effect in ferroelectric materials with non-centrosymmetry leads to intriguing properties for spintronic applications. In the present work, a comparative study of spin splitting in the bulk electronic energy bands of the tetragonal and rhombohedral phases of BiFeO₃ (BFO) in terms of the Rashba and Dresselhaus effects is carried out through first-principles calculations. The obtained spin splittings, particularly at the conduction band minima, are further supplemented with an effective k·p model analysis. For the tetragonal BFO, a dominating pure bulk-type Rashba effect with helical in-plane spin components shown through diagrams is observed, whereas the rhombohedral BFO shows a significant contribution from the out-of-plane spin components and an interplay between the Rashba and Dresselhaus effects is discussed. In addition, tunability of the Rashba parameters with the application of uniaxial strain (±5%) is obtained in tetragonal BFO, in which the Rashba coefficient (α_R) doubles with a compressive 5% strain, making tetragonal BFO a suitable candidate for spintronic applications. More importantly, full reversal of the in-plane spin texture is obtained for the opposite polarization states in tetragonal BFO with an activation energy barrier of 1.13 eV.

A photoluminescent chiral lead-free hybrid ferroelastic semiconductor with switchable second-harmonic generation

Chiral organic-inorganic hybrid semiconductors (COIHSs) dominated by lead halides have recently gained tremendous interest. Here, we report a lead-free photoluminescent COIHS [R-3-hydroxylpiperidinium]₂SbCl₅ with a bandgap of 3.14 eV. It shows a ferroelastic phase transition at 341 K accompanied by a switchable second-harmonic generation response and presents clear ferroelastic domains, which are rarely found in lead-free COIHSs.

Templating Influence of Regulated Inorganic Framework in Two-Dimensional Ferroelastic Perovskites: (C3 H5 CH2 NH3 )2 [MCl4 ] (M=Mn and Cd)

The remarkable material stability and structural diversity of two-dimensional (2D) organic-inorganic hybrid perovskites (OIHPs) constitute a vast available library of versatile materials. In particular, ferroelastic property, for which the spontaneous strain can be transformed by applying mechanical stress, is very promising for extensive nanotechnological applications. However, integrating ferroelastic property into 2D OIHPs is still in its infancy. Herein, we designed two new 2D OIHPs (C₃ H₅ CH₂ NH₃ )₂ [MCl₄ ] (M=Mn for 1 and Cd for 2), which undergo reversible ferroelastic phase transitions with an Aizu expression 4/mmmFmmm. The templating influence of the more distorted inorganic framework on the disordering of organic cations and the stronger hydrogen bonds has a key role in the striking improvement of Curie temperature from 246 K in 1 to 273 K in 2. Meanwhile, the minimized alteration of structural motif ensures the well maintaining of the ferroelastic performance in the forms of crystals and thin films, as demonstrated by the identifiable evolution of domain structures. This work will provide a fertile new ground for enlarging the limited number of 2D ferroelastic OIHPs with better practical utility.

Epitaxial Growth of β-Ga2O3 Thin Films on Si with YSZ Buffer Layer

We report the epitaxial growth of (2̅01)-oriented β-Ga₂O₃ thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga₂O₃ thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga₂O₃ thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga₂O₃ thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga₂O₃ and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga₂O₃ thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric-ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic-ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices.

Axial-Chiral BINOL Multiferroic Crystals with Coexistence of Ferroelectricity and Ferroelasticity

Chirality exists everywhere from natural amino acids to particle physics. The introduction of point chirality has recently been shown to be an efficient strategy for the construction of molecular ferroelectrics. In contrast to point chirality, however, axial chirality is rarely used to design ferroelectrics so far. Here, based on optically active 1,1'-bi-2-naphthol (BINOL), which has been applied extensively as a versatile chiral reagent in asymmetric catalysis, chiral recognition, and optics, we successfully design a pair of axial-chiral BINOL multiferroics, (R)-BINOL-DIPASi and (S)-BINOL-DIPASi. They experience a 2F1-type full ferroelectric/ferroelastic phase transition at a high temperature of 362 and 363 K, respectively. Piezoelectric force microscopy and polarization-voltage hysteresis loops demonstrate their ferroelectric domains and domain switching, and polarized light microscopy visualizes the evolution of stripe-shaped ferroelastic domains. The axial-chiral BINOL building block promotes the generation of the polar structure and ferroelectricity, and the organosilicon component increases the rotational energy barrier and thus the phase transition temperature. This work presents the first axial-chiral high-temperature multiferroic crystals, offering an efficient path for designing molecular multiferroics through the introduction of axial chirality.

Brillouin Scattering and First-Principles Studies of BaMO3 (M = Ti, Zr, and Cu) Perovskites

Perovskite oxides with the general formula ABO₃ comprise a large number of families among the structures of oxide-based materials, and currently, several perovskite structures have been identified. From a variety of compositions and structures, various functions are observed in perovskite compounds, and therefore, they became very useful for various applications in the electronic and medical industries. One of the most puzzling issues for perovskite compounds is the understanding of the vibration and relaxation dynamics in the gigahertz range. In that sense, the micro-Brillouin scattering system is a very effective tool to probe the gigahertz dynamics, and also, first-principles calculations can be used to describe the phonon structure with different atomic contributions. The micro-Brillouin scattering system and first-principles calculations provide the fundamental information on a variety of vibration and relaxation processes related to structural phase transitions under different external conditions such as temperature, electric field, and pressure. This review article summarizes the Brillouin scattering and first-principles studies on BaMO₃ (M = Ti, Zr, and Cu). Through a detailed analysis of the existing results, we summarize the existing limitations and future perspectives in these research areas, which may propel the development of different perovskite ferroelectrics and extend their practical application areas.

Flexoelectricity-Driven Mechanical Switching of Polarization in Metastable Ferroelectrics

Flexoelectricity-based mechanical switching of ferroelectric polarization has recently emerged as a fascinating alternative to conventional polarization switching using electric fields. Here, we demonstrate hyperefficient mechanical switching of polarization exploiting metastable ferroelectricity that inherently holds a unique mechanical response. We theoretically predict that mechanical forces markedly reduce the coercivity of metastable ferroelectricity, thus greatly bolstering flexoelectricity-driven mechanical polarization switching. As predicted, we experimentally confirm the mechanical polarization switching via an unusually low mechanical force (100 nN) in metastable ferroelectric CaTiO_{3}. Furthermore, the use of low mechanical forces narrows the width of mechanically writable nanodomains to sub-10 nm, suggesting an ultrahigh data storage density of ≥1  Tbit cm^{-2}. This Letter sheds light on the mechanical switching of ferroelectric polarization as a viable key element for next-generation efficient nanoelectronics and nanoelectromechanics.

Synthesis and Characterization of a Displacement-Type Ferroelectric-Ferroelectric Phase Transition Compound [(NH3)(CH2)3(NH3)]2[InBr6]Br·H2O

Ferroelectric materials have aroused the researchers' great interest due to their wide applications. Here, a displacement-type ferroelectric-ferroelectric phase transition material [(NH₃)(CH₂)₃(NH₃)]₂[InBr₆]Br·H₂O (1) with T_c = 143 K was successfully prepared. The ferroelectric phase transition is verified by the characterization techniques such as differential scanning calorimetry, single-crystal structure elucidation, dielectric and ferroelectric measurements. The single-crystal structure elucidation reveals that the displacement and distortion of [(NH₃)(CH₂)₃(NH₃)]²⁺ cations lead to the phase transition from Cmc2₁ to Pca2₁. The spontaneous polarizations at 293 and 133 K are 0.15 and 0.12 μC·cm^-2, respectively. We expect that this work will help in further exploration of some new ferroelectric materials.

Magneto-Electric-Optical Coupling in Multiferroic BiFeO3 -Based Films

Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO₃ -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO₃ -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.

Ferroelasticity in Organic-Inorganic Hybrid Perovskites

Molecular ferroelastics have received particular attention for potential applications in mechanical switches, shape memory, energy conversion, information processing, and solar cells, by taking advantages of their low-cost, light-weight, easy preparation, and mechanical flexibility. The unique structures of organic-inorganic hybrid perovskites have been considered to be a design platform for symmetry-breaking-associated order-disorder in lattice, thereby possessing great potential for ferroelastic phase transition. Herein, we review the research progress of organic-inorganic hybrid perovskite ferroelastics in recent years, focusing on the crystal structures, dimensions, phase transitions and ferroelastic properties. In view of the few reports on molecular-based hybrid ferroelastics, we look forward to the structural design strategies of molecular ferroelastic materials, as well as the opportunities and challenges faced by molecular-based hybrid ferroelastic materials in the future. This review will have positive guiding significance for the synthesis and future exploration of organic-inorganic hybrid molecular ferroelastics.

Pressure-Enhanced Photocurrent in One-Dimensional SbSI via Lone-Pair Electron Reconfiguration

Understanding the relationships between the local structures and physical properties of low-dimensional ferroelectrics is of both fundamental and practical importance. Here, pressure-induced enhancement in the photocurrent of SbSI is observed by using pressure to regulate the lone-pair electrons (LPEs). The reconfiguration of LPEs under pressure leads to the inversion symmetry broken in the crystal structure and an optimum bandgap according to the Shockley–Queisser limit. The increased polarization caused by the stereochemical expression of LPEs results in a significantly enhanced photocurrent at 14 GPa. Our research enriches the foundational understanding of structure–property relationships by regulating the stereochemical role of LPEs and offers a distinctive approach to the design of ferroelectric-photovoltaic materials.

Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity

Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO₃ thin films at room temperature are discovered. It can be reversibly switched between these two non-volatile antiferromagnetic states by a moderate magnetic field and a non-contact optical approach. Importantly, the conductivity of the areas with each antiferromagnetic textures is drastically different. It is conclusively demonstrated the capability of optical writing and electrical reading of these newly discovered bistable antiferromagnetic states in the BiFeO₃ thin films.

Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary

Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge to simultaneously implement the robust polarization and negligible leakage current in a ferroelectric thin film, both of which are significant for ferroelectric tunneling junctions with reliable operating performance. Here, we observe a large tunneling electroresistance effect of ∼1.0 × 10⁴% across the BiFeO₃ nanoisland edge, where the intrinsic ferroelectric polarization of the nanoisland makes a major contribution to tuning the barrier height. This phenomenon is beneficial from the artificially designed tunneling barrier between the nanoscale top electrode and the inclined conducting phase boundary, which is located between the rhombohedral-island and tetragonal-film matrix and arranged with the dislocation array. More significantly, the tunneling electroresistance effect is further improved to ∼1.6 × 10⁴% by the introduction of photoinduced carriers, which are separated by the flexoelectric field arising from the dislocations.

The role of lattice dynamics in ferroelectric switching

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO₃) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO₃ films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

Reducing the switching energy of ferroelectric films remains an important goal. Here, the authors elucidate the fundamental role of lattice dynamics in ferroelectric switching on both freestanding BiFeO₃ membranes and films clamped to a substrate.

H/F Substitution induced switchable coordination bonds in a cyano-bridged hybrid double perovskite ferroelastic

A three-dimensional cyano-bridged double perovskite ferroelastic [(CH₃)₃NCH₂F]₂[KFe(CN)₆] was constructed by introducing unprecedented switchable C-F-K coordination bonds. H/F substitution not only preserves the basic structure of the parent [(CH₃)₄N]₂[KFe(CN)₆] but also affords an m3̄mF2/m-type ferroelastic phase transition.

Dual-channel control of ferroelastic domains in a host–guest inclusion compound

By replacing [PF6]− with the larger [TFSA]−, the phase transition temperature is increased from 305 K to 342 K in a host–guest inclusion ferroelastic crystal, [(3,4-DFA)(18-crown-6)][TFSA], which can realize dual-channel (thermal and stress) control of ferroelastic domains.

Ferroelastic Phase Transition with Large Spontaneous Strain Caused by Freezing the Conformational Dynamics of Ammonium

By adjusting the substituent group of the organic ammonium in three molecular ionic complexes, [A][Fe3O(O2CH)8(H2O)]2 (A = NH3(CH2)3NH3 for 1, CH3NH2(CH2)3NH3 for 2 and CH3CH2NH2(CH2)3NH2CH2CH3 for 3) crystallized in 2/m...

Anisotropic epitaxial stabilization of a low-symmetry ferroelectric with enhanced electromechanical response

Piezoelectrics interconvert mechanical energy and electric charge and are widely used in actuators and sensors. The best performing materials are ferroelectrics at a morphotropic phase boundary, where several phases coexist. Switching between these phases by electric field produces a large electromechanical response. In ferroelectric BiFeO₃, strain can create a morphotropic-phase-boundary-like phase mixture and thus generate large electric-field-dependent strains. However, this enhanced response occurs at localized, randomly positioned regions of the film. Here, we use epitaxial strain and orientation engineering in tandem-anisotropic epitaxy-to craft a low-symmetry phase of BiFeO₃ that acts as a structural bridge between the rhombohedral-like and tetragonal-like polymorphs. Interferometric displacement sensor measurements reveal that this phase has an enhanced piezoelectric coefficient of ×2.4 compared with typical rhombohedral-like BiFeO₃. Band-excitation frequency response measurements and first-principles calculations provide evidence that this phase undergoes a transition to the tetragonal-like polymorph under electric field, generating an enhanced piezoelectric response throughout the film and associated field-induced reversible strains. These results offer a route to engineer thin-film piezoelectrics with improved functionalities, with broader perspectives for other functional oxides.

Polarization-switching pathway determined electrical transport behaviors in rhombohedral BiFeO3 thin films

We investigated the polarization-switching pathway-dependent electrical transport behaviors in rhombohedral-phase BiFeO₃ thin films with point contact geometry. By combining conducting-atomic force microscopy and piezoelectric force microscopy, we simultaneously obtained current-voltage curves and the corresponding domain patterns before and after the polarization switching. The results indicate that for the (001)-oriented film, the abrupt current (due to polarization reversing) increases with the enhanced switching voltage for 109° and 180° switching events. More importantly, the abrupt current can be further improved in (110)- and (111)-oriented thin films, which benefits from the stronger modulation of the interfacial Schottky barrier by the enhanced out-of-plane polarization magnitude. The current on-off ratio obtained in a ∼20 nm thick (111)-oriented BiFeO₃ thin film at a readout voltage of ∼3 V exceeds (∼6 × 10⁵)%, which is close to the result from a previous report on ultrathin tetragonal BiFeO₃ thin films.

Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO3films

In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO₃(BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109° DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15μA cm^-2and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.

Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures

Voltage control of magnetic order is desirable for spintronic device applications, but 180° magnetization switching is not straightforward because electric fields do not break time-reversal symmetry. Ferrimagnets are promising candidates for 180° switching owing to a multi-sublattice configuration with opposing magnetic moments of different magnitudes. In this study we used solid-state hydrogen gating to control the ferrimagnetic order in rare earth-transition metal thin films dynamically. Electric field-induced hydrogen loading/unloading in GdCo can shift the magnetic compensation temperature by more than 100 K, which enables control of the dominant magnetic sublattice. X-ray magnetic circular dichroism measurements and ab initio calculations indicate that the magnetization control originates from the weakening of antiferromagnetic exchange coupling that reduces the magnetization of Gd more than that of Co upon hydrogenation. We observed reversible, gate voltage-induced net magnetization switching and full 180° Néel vector reversal in the absence of external magnetic fields. Furthermore, we generated ferrimagnetic spin textures, such as chiral domain walls and skyrmions, in racetrack devices through hydrogen gating. With gating times as short as 50 μs and endurance of more than 10,000 cycles, our method provides a powerful means to tune ferrimagnetic spin textures and dynamics, with broad applicability in the rapidly emerging field of ferrimagnetic spintronics.

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn_1/3Nb_2/3O₃)_1−x-(PbTiO₃)_x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

Emergence of metamagnetic transition, re-entrant cluster glass and spin phonon coupling in Tb2CoMnO6

The double perovskite compound Tb₂CoMnO₆has been investigated using x-ray absorption spectroscopy (XAS), Raman spectroscopy, magnetic measurements andab initioband structure calculations. It is observed that both anti-ferromagnetic (AFM) and ferromagnetic (FM) phase coexist in this material. The presence of anti-site disorder (ASD) has been established from the analysis of neutron diffraction data. Moreover, a prominent metamagnetic transition is observed in theM(H) behavior that has been explained with the drastic reorientation of the pinned domain which are aligned antiparallel by the antiphase boundaries (APBs) at zero field. The ASD further gives rise to spin frustration at low temperature which leads to the re-entrant cluster glass ∼33 K. The coupling between phononic degree of freedom and spin in the system has also been demonstrated. It is observed that the theoretical calculation is consistent with that of the experimentally observed behavior.

Layer number dependent ferroelasticity in 2D Ruddlesden-Popper organic-inorganic hybrid perovskites

Ferroelasticity represents material domains possessing spontaneous strain that can be switched by external stress. Three-dimensional perovskites like methylammonium lead iodide are determined to be ferroelastic. Layered perovskites have been applied in optoelectronic devices with outstanding performance. However, the understanding of lattice strain and ferroelasticity in layered perovskites is still lacking. Here, using the in-situ observation of switching domains in layered perovskite single crystals under external strain, we discover the evidence of ferroelasticity in layered perovskites with layer number more than one, while the perovskites with single octahedra layer do not show ferroelasticity. Density functional theory calculation shows that ferroelasticity in layered perovskites originates from the distortion of inorganic octahedra resulting from the rotation of aspherical methylammonium cations. The absence of methylammonium cations in single layer perovskite accounts for the lack of ferroelasticity. These ferroelastic domains do not induce non-radiative recombination or reduce the photoluminescence quantum yield.

A high-temperature halide perovskite molecular ferroelastic with evident dielectric switching

Under the quasi-spherical strategy, a hybrid halide perovskite (TMTB)CdCl₃ is designed and synthesized and shows evident high-temperature ferroelastic phase transition and dielectric switching.

An unprecedented hexagonal double perovskite organic-inorganic hybrid ferroelastic material: (piperidinium)2[KBiCl6]

An unprecedented A2MIMIIIX6-type double perovskite adopting a fully hexagonal BaNiO3-type structure, (piperidinium)2[KBiCl6], undergoes a 2/mF1[combining macron] ferroelastic phase transition at 285 K with a spontaneous strain of 0.0615, arising from the order-disorder transition of organic cations together with the synchronous displacement of inorganic chains.

Density functional theory predictions of the mechanical properties of crystalline materials

The DFT-predicted mechanical properties of crystalline materials are crucial knowledge for their screening, design, and exploitation.

Methylation Design Strategy to Trigger a Dual Dielectric Switch and Improve the Phase Transition Temperature

Phase transitions of hybrid materials have aroused widespread concern and call for an in-depth study on its structure design, because the structure and characteristics are closely related, which promote potential applications in the field of temperature sensors, dielectric switches, and actuators. However, designing materials with multiple phase transitions and a high phase transition temperature (Tr) remains a huge challenge. In order to deal with this key hurdle, we tried to regulate the structural components and successfully synthesized [MASD]₂[CdCl₄] (1, MASD = 8-methyl-5-azoniaspiro[4,5]decane), which displays multiple phase transitions occurring at 273.8 K and 395.9 K separately. The Tr has significantly increased compared with the parent compounds reported previously. As the temperature sensitivity of compound 1 is constant at different frequencies, it can be applied for detectors or sensors under frequency-independent or wide frequency conditions. Moreover, methylation design strategy evidently triggered the dual dielectric switch and improved the Tr, which opens a new path for finding and adjusting ideal materials of multiple phase transition.

Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO3 membranes

The integration of ferroic oxide thin films into advanced flexible electronics will bring multifunctionality beyond organic and metallic materials. However, it is challenging to achieve high flexibility in single-crystalline ferroic oxides that is considerable to organic or metallic materials. Here, we demonstrate the superior flexibility of freestanding single-crystalline BiFeO₃ membranes, which are typical multiferroic materials with multifunctionality. They can endure cyclic 180° folding and have good recoverability, with the maximum bending strain up to 5.42% during in situ bending under scanning electron microscopy, far beyond their bulk counterparts. Such superior elasticity mainly originates from reversible rhombohedral-tetragonal phase transition, as revealed by phase-field simulations. This study suggests a general fundamental mechanism for a variety of ferroic oxides to achieve high flexibility and to work as smart materials in flexible electronics.

Highly nonlinear magnetoelectric effect in buckled-honeycomb antiferromagnetic Co4Ta2O9

Strongly correlated materials with multiple order parameters provide unique insights into the fundamental interactions in condensed matter systems and present opportunities for innovative technological applications. A class of antiferromagnetic honeycomb lattices compounds, A₄B₂O₉ (A = Co, Fe, Mn; B = Nb, Ta), have been explored owing to the occurrence of linear magnetoelectricity. From our investigation of magnetoelectricity on single crystalline Co₄Ta₂O₉, we discovered strongly nonlinear and antisymmetric magnetoelectric behavior above the spin-flop transition for magnetic fields applied along two orthogonal in-plane directions. This observation suggests that two types of inequivalent Co²⁺ sublattices generate magnetic-field-dependent ferroelectric polarization with opposite signs. The results motivate fundamental and applied research on the intriguing magnetoelectric characteristics of these buckled-honeycomb lattice materials.

Anisotropic and nonlinear magnetodielectric effects in orthoferrite ErFeO3 single crystals

In rare-earth orthoferrites, strongly correlated order parameters have been thoroughly investigated, which aims to find multiple functionalities such as multiferroic or magnetoelectric properties. We have discovered highly anisotropic and nonlinear magnetodielectric effects from detailed measurements of magnetoelectric properties in single-crystalline orthoferrite, ErFeO₃. Isothermal dielectric constant varies in shapes and signs depending on the relative orientations between the external electric and magnetic fields, which may be ascribed to the spin-phonon couplings. In addition, a dielectric constant with both electric and magnetic fields along the c axis exhibits two symmetric sharp anomalies, which are closely relevant to the spin-flop transition, below the ordering temperature of Er³⁺ spins, T_Er = 3.4 K. We speculate that the magnetostriction from the exchange couplings between Er³⁺ and Fe³⁺ magnetic moments would be responsible for this relationship between electric and magnetic properties. Our results present significant characteristics of the orthoferrite compounds and offer a crucial guide for exploring suitable materials for magnetoelectric functional applications.

Probing the Griffiths like phase, unconventional dual glassy states, giant exchange bias effects and its correlation with its electronic structure in Pr2-x Sr x CoMnO6

Crystal, electronic structure, dc and ac magnetization properties of the hole substituted (Sr²⁺) and partially B-site disordered double perovskite Pr_2-x Sr _x CoMnO₆ system have been investigated. The XRD pattern analysis showed a systematic decrease in the lattice parameters owing to the enhanced oxidation states of the Co/Mn ions. The electronic structure study by XPS measurements suggested the presence of mixed valence states of the B-site ions (Co²⁺ /Co³⁺ and Mn³⁺ /Mn⁴⁺) with significant enhancement of the average oxidation states due to hole doping. The mere absence of electronic states near the Fermi level in the valence band (VB) spectra for both pure (x  =  0.0) and Sr doped (x  =  0.5) systems indicated the insulating nature of the samples. Sr substitution is observed to increase the spectral weight near the Fermi level suggesting for an enhanced conductivity of the hole doped system. The dc magnetization data divulged a Griffiths like phase above the long-range ordering temperature. A typical re-entrant spin glass like phase driven by the inherent anti-site disorder (ASD) has been recognized by ac susceptibility study for both the pure and doped systems. Most interestingly, the emergence of a new cluster glass like phase (immediately below the magnetic ordering temperature and above the spin-glass transition temperature) solely driven by the Sr substitution has been unravelled by ac magnetization dynamics study. Observation of these dual glassy states in a single system is scarce and hence placed the present system amongst the rare materials. The isothermal magnetization measurements further probed the exhibition of the giant exchange bias effect originated from the interfacial exchange interactions due to existence of low temperature antiferromagnetic clusters embedded in the glassy matrix.

Strain-Engineered Ferroelastic Structures in PbTiO3 Films and Their Control by Electric Fields

We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO₃ thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a₁/a₂ superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO₃ on GdScO₃-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.