New moves of the spintronics tango

Intrinsic anomalous, spin and valley Hall effects in 'ex-so-tic' van-der-Waals structures

We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) sandwiched between a semiconducting van-der-Waals material with strong spin-orbit coupling (e.g., WS 2 ) and a ferromagnetic insulating vdW material (e.g. Cr 2 Ge 2 Te 6 ). Due to the exchange proximity effect from one side and spin-orbit proximity effect from the other side of graphene, such a structure is referred to as graphene based 'ex-so-tic' structure. First, we derive an effective Hamiltonian describing the low-energy states of the structure. Then, using the Green's function formalism, we obtain analytical results for the Hall conductivities as a function of the Fermi energy and gate voltage. For specific values of these parameters, we find a quantized valley Hall conductivity.

Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9 × 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature.

Controlling the helicity of light by electrical magnetization switching

Controlling the intensity of emitted light and charge current is the basis of transferring and processing information1. By contrast, robust information storage and magnetic random-access memories are implemented using the spin of the carrier and the associated magnetization in ferromagnets2. The missing link between the respective disciplines of photonics, electronics and spintronics is to modulate the circular polarization of the emitted light, rather than its intensity, by electrically controlled magnetization. Here we demonstrate that this missing link is established at room temperature and zero applied magnetic field in light-emitting diodes2-7, through the transfer of angular momentum between photons, electrons and ferromagnets. With spin-orbit torque8-11, a charge current generates also a spin current to electrically switch the magnetization. This switching determines the spin orientation of injected carriers into semiconductors, in which the transfer of angular momentum from the electron spin to photon controls the circular polarization of the emitted light2. The spin-photon conversion with the nonvolatile control of magnetization opens paths to seamlessly integrate information transfer, processing and storage. Our results provide substantial advances towards electrically controlled ultrafast modulation of circular polarization and spin injection with magnetization dynamics for the next-generation information and communication technology12, including space-light data transfer. The same operating principle in scaled-down structures or using two-dimensional materials will enable transformative opportunities for quantum information processing with spin-controlled single-photon sources, as well as for implementing spin-dependent time-resolved spectroscopies.

Chiral Van Der Waals Superlattices for Enhanced Spin-Selective Transport and Spin-Dependent Electrocatalytic Performance

The emergence of the chiral-induced spin-selectivity (CISS) effect offers a new avenue for chiral organic molecules to autonomously manipulate spin configurations, thereby opening up possibilities in spintronics and spin-dependent electrochemical applications. Despite extensive exploration of various chiral systems as spin filters, one often encounters challenges in achieving simultaneously high conductivity and high spin polarization (SP). In this study, a promising chiral van der Waals superlattice, specifically the chiral TiS2 crystal, is synthesized via electrochemical intercalation of chiral molecules into a metallic TiS2 single crystal. Multiple tunneling processes within the highly ordered chiral layered structure of chiral TiS2 superlattices result in an exceptionally high SP exceeding 90%. This remarkable observation of significantly high SP within the linear transport regime is unprecedented. Furthermore, the chiral TiS2 electrode exhibits enhanced catalytic activity for oxygen evolution reaction (OER) due to its remarkable spin-selectivity for triplet oxygen evolution. The OER performance of chiral TiS2 superlattice crystals presented here exhibits superior characteristics to previously reported chiral MoS2 catalysts, with an approximately tenfold increase in current density. The combination of metallic conductivity and high SP sets the stage for the development of a new generation of CISS materials, enabling a wide range of electron spin-based applications.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Recent advances in 2D van der Waals magnets: Detection, modulation, and applications

The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.

Dynamical Behavior of Pure Spin Current in Organic Materials

Growing concentration on the novel information processing technology and low-cost, flexible materials make the spintronics and organic materials appealing for the future interdisciplinary investigations. Organic spintronics, in this context, has arisen and witnessed great advances during the past two decades owing to the continuous innovative exploitation of the charge-contained spin polarized current. Albeit with such inspiring facts, charge-absent spin angular momentum flow, namely pure spin currents (PSCs) are less probed in organic functional solids. In this review, the past exploring journey of PSC phenomenon in organic materials are retrospected, including non-magnetic semiconductors and molecular magnets. Starting with the basic concepts and the generation mechanism for PSC, the representative experimental observations of PSC in the organic-based networks are subsequently demonstrated and summarized, by accompanying explicit discussion over the propagating mechanism of net spin itself in the organic media. Finally, future perspectives on PSC in organic materials are illustrated mainly from the material point of view, including single molecule magnets, complexes for the organic ligands framework as well as the lanthanide metal complexes, organic radicals, and the emerging 2D organic magnets.

Spin-decoupling of vertical cavity surface-emitting lasers with complete phase modulation using on-chip integrated Jones matrix metasurfaces

Polarization response of artificially structured nano-antennas can be exploited to design innovative optical components, also dubbed "vectorial metasurfaces", for the modulation of phase, amplitude, and polarization with subwavelength spatial resolution. Recent efforts in conceiving Jones matrix formalism led to the advancement of vectorial metasurfaces to independently manipulate any arbitrary phase function of orthogonal polarization states. Here, we are taking advantages of this formalism to design and experimentally validate the performance of CMOS compatible Jones matrix metasurfaces monolithically integrated with standard VCSELs for on-chip spin-decoupling and phase shaping. Our approach enables accessing the optical spin states of VCSELs in an ultra-compact way with previously unattainable phase controllability. By exploiting spin states as a new degree of freedom for laser wavefront engineering, our platform is capable of operating and reading-out the spin-momentum of lasers associated with injected spin carriers, which would potentially play a pivotal role for the development of emerging spin-optoelectronic devices.

Comparison of Ferromagnetic Materials: Past Work, Recent Trends, and Applications

Despite our traditional concept-based understanding of ferromagnetism, an investigation of this phenomenon has revealed several other facts. Ferromagnetism was previously supposed to be exhibited by only a few elements. Subsequently, it was realized that specific elements with d- or f- orbitals demonstrated this phenomenon. When elements without these orbitals exhibited ferromagnetism, intrinsic origin-based and structural defect-based theories were introduced. At present, nonmagnetic oxides, hexaborides of alkaline-earth metals, carbon structures, and nonmetallic non-oxide compounds are gaining significant attention owing to their potential applications in spintronics, electronics, biomedicine, etc. Therefore, herein, previous work, recent trends, and the applications of these materials and studies based on relevant topics, ranging from the traditional understanding of ferromagnetism to the most recent two-element-based systems, are reviewed.

Unexpected Ferromagnetism—A Review

The study of magnetism in materials without partially filled d or f bands has gained much attention in the past years. Even though it has challenged the understanding of traditional magnetism, there is a wide range of studies debating the nature of magnetism in such materials. Theories on whether the exhibited ferromagnetic behavior is due to sample impurities or intrinsic structural defects have been published throughout the years. Materials such as hexaborides, non-magnetic oxides, and carbon nanostructures have been of great interest due to their potential applications. For a better understanding, herein, we present a literature review combining past and up-to-date studies on these materials.

Spin Laser Local Oscillators for Homodyne Detection in Coherent Optical Communications

We numerically investigate spin-controlled vertical-cavity surface-emitting lasers (spin-VCSELs) for local oscillators, which are based on an injection locking technique used in coherent optical communications. Under the spin polarization modulation of an injection-locked spin-VCSEL, frequency-shifted and phase-correlated optical sidebands are generated with an orthogonal polarization against the injection light, and one of the sidebands is resonantly enhanced due to the linear birefringence in the spin-VCSEL. We determine that the peak strength and peak frequency in the spin polarization modulation sensitivity of the injection-locked spin-VCSEL depend on detuning frequency and injection ratio conditions. As a proof of concept, 25-Gbaud and 16-ary quadrature amplitude modulation optical data signals and a pilot tone are generated, and the pilot tone is used for the injection locking of a spin-VCSEL. An orthogonally-polarized modulation sideband generated from the injection-locked spin-VCSEL is used as a frequency-shifted local oscillator (LO). We verify that the frequency-shifted LO can be used for the homodyne detection of optical data signals with no degradation. Our findings suggest a novel application of spin-VCSELs for coherent optical communications.

Theory of Transport in Ferroelectric Capacitors

The spontaneous order of electric and magnetic dipoles in ferroelectrics and ferromagnets even at high temperatures is both fascinating and useful. Transport of magnetism in the form of spin currents is vigorously studied in spintronics, but the polarization current of the ferroelectric order has escaped attention. We therefore present a time-dependent diffusion theory for heat and polarization transport in a planar ferroelectric capacitor with parameters derived from a one-dimensional phonon model. We predict steady-state Seebeck and transient Peltier effects that await experimental discovery.

Recent Advances in Two-Dimensional Spintronics

Spintronics is the most promising technology to develop alternative multi-functional, high-speed, low-energy electronic devices. Due to their unusual physical characteristics, emerging two-dimensional (2D) materials provide a new platform for exploring novel spintronic devices. Recently, 2D spintronics has made great progress in both theoretical and experimental researches. Here, the progress of 2D spintronics has been reviewed. In the last, the current challenges and future opportunities have been pointed out in this field.

Generation of DC, AC, and Second-Harmonic Spin Currents by Electromagnetic Fields in an Inversion-Asymmetric Antiferromagnet

Manipulating spin currents in magnetic insulators is a key technology in spintronics. We theoretically study a simple inversion-asymmetric model of quantum antiferromagnets, where both the exchange interaction and the magnetic field are staggered. We calculate spin currents generated by external electric and magnetic fields by using a quantum master equation. We show that an ac electric field with amplitude E 0 leads, through exchange-interaction modulation, to the dc and second-order harmonic spin currents proportional to E 0 2 . We also show that dc and ac staggered magnetic fields B 0 generate the dc and ac spin currents proportional to B 0 , respectively. We elucidate the mechanism by an exactly solvable model, and thereby propose the ways of spin current manipulation by electromagnetic fields.

Weak ferromagnetism and time-stable remanence in hematite: effect of shape, size and morphology

A number of Dzyaloshinskii-Moriya interaction (DMI) driven canted antiferromagnets or weak ferromagnets (WFM) including hematite exhibit two distinct time scales in magnetization relaxation measurements, one of which is ultra-slow. This leads to the observation of a part of remanence that is time-stable in character. In this work, our endeavor is to optimize the magnitude of this time-stable remanence for the hematite, a room temperature WFM, as a function of shape size and morphology. A substantial enhancement in the magnitude of this unique remanence is observed in porous hematite, consisting of ultra-small nano particles, as compared to crystallites grown in regular morphology, such as cuboids or hexagonal plates. This time-stable remanence exhibits a peak-like pattern with magnetic field, which is significantly sharper in porous sample. Experimental data suggest that the extent and the magnitude of the spin canting associated with the WFM phase can be best gauged by the presence of this remanence and its unusual magnetic field dependence. Temperature variation of lattice parameters bring out correlations between strain effects that alter the bond length and bond angle associated with primary super exchange paths, which in-turn systematically alter the magnitude of the time-stable remanence. This study provides insights regarding a long standing problems of anomalies in the magnitude of magnetization on repeated cooling in case of hematite. Our data caps on these anomalies, which we argue, arise due to spontaneous spin canting associated with WFM phase. Our results also elucidate on why thermal cycling protocols during bulk magnetization measurements are even more crucial for hematite which exhibits both canted as well as pure antiferromgnetic phase.

Induced high-temperature ferromagnetism by structural phase transitions in strained antiferromagnetic γ-Fe50Mn50 epitaxial films

Strain effects in epitaxial films can substantially enhance individual functional properties or induce properties which do not exist in corresponding bulk materials. The bcc α-Fe₅₀Mn₅₀ films are a ferromagnetic with a Curie temperature between 650 K and 750 K, which do not exist in nature can be manipulated through the tensile strain. In this study, γ-Fe₅₀Mn₅₀ epitaxial films grown on GaAs(001) using molecular beam epitaxy are found to structural transition from the face-centered-cubic (fcc, a = 0.327 nm) γ-phase to the body-centered-cubic (bcc, a = 0.889 nm) α-phase. For α-Fe₅₀Mn₅₀ epitaxial films, ferromagnetism is accompanied by structural phase transition due to the tensile strain induced by the differences of the thermal expansion between the film and the substrate. Moreover, by realizing in epitaxial films with fcc structure a tensile strain state, phase transitions were introduced Fe-Mn alloy system with bcc structure. These findings are of fundamental importance to understanding the mechanism of phase transition and properties of epitaxial CuAu-I type antiferromagnetic alloy thin films under strain.

Room temperature ferromagnetic properties of In2S3 nanoparticles regulated by doping with Gd ions

Gd-Doped In₂S₃ nanoparticles, with sizes of 3–5 nm, were synthesized, which demonstrated enhanced room-temperature ferromagnetism.

Extended SSH Model: Non-Local Couplings and Non-Monotonous Edge States

We construct a generalized system by introducing an additional long-range hopping to the well-known Su-Schrieffer-Heeger (SSH) model. This system exhibits richer topological properties including non-trivial topological phases and associated localized edge states. We study the zero-energy edge states in detail and derive the edge-state wave functions using two different methods. Furthermore, we propose a possible setup using octupole moments optically excited on an array of dielectric particles for the realization of the system, and by adjusting the coupling strengths between neighboring particles we can control the hotspots (near-field enhancement) in such structures.

Spin polarization and spin channel reversal in graphitic carbon nitrides on top of an α-Fe2O3(0001) surface

Inducing the spin-dependent characteristics in two-dimensional (2D) materials by magnetic proximity effects is a recent targeted route for 2D spintronic devices. Here, we report the spin-dependent electronic properties of graphitic carbon nitrides (g-C2N, g-C3N and g-C4N3) on top of α-Fe2O3(0001) by first-principles calculations. The different terminations of α-Fe2O3(0001) can switch the conductivity of g-C2N from the n- to the p-type. In particular, the O- and single Fe-terminated interfaces show a half-metallic feature in g-C2N, which originates from the charge redistribution driven by work function difference and interfacial interaction. Additionally, the O-terminated interface shows stable physical adsorption, which leads to spin polarization in g-C3N and spin channel reversal in g-C4N3. These results strongly reveal that this novel system is a candidate for future graphitic carbon nitride-based spintronic devices.

A computational study on a multimode spin conductance switching by coordination isomerization in organometallic single-molecule junctions

Single-molecule junctions provide the additional flexibility of tuning the on/off conductance states through molecular design. Here, we focus on a family of organometallic complexes with a conjugated curved buckybowl as the ligand. Using first-principles calculations, a multi-mode reversible spin switching based on the CpFe·corannulene complex is predicted by the temperature control of the CpFe+ coordination position in corannulene. The different spin conductance states for three coordinated modes are ascribed to the different electronic spin states of the organometallic complex due to crystal field effects. The predicted relative stabilities of isomers and the energy barriers of isomerization reactions can ensure that the conversion among the three isomers can occur quickly and, at a specific temperature, a dominant isomer has a higher proportion than the other two isomers. This provides a new framework for understanding transport in organometallic complexes with localized d states. This presents an exciting opportunity for exploiting junctions involving molecular spin switching.

Two-Dimensional Lattices of VN: Emergence of Ferromagnetism and Half-Metallicity on Nanoscale

Two-dimensional (2D) ferromagnets with high spin-polarization ratio and high Curie temperature are crucial for developing next-generation spintronic nanodevices. Using first-principles calculations, we predict two polymorphic modifications ( t-VN and h-VN) of 2D VN lattices that have robust intrinsic ferromagnetic properties and high Curie temperatures. Whereas t-VN has 99.9% of spin polarization at the Fermi level, h-VN possesses a half-metallic type of conductivity and keeps it after contact with semiconducting MoS₂, which can be used as the substrate for h-VN synthesis and valley polarized contacts. Magnetocrystalline anisotropy energy of 2D VN polymorphs is found to be at least an order larger than those of Fe and Ni bulks. The phonon spectra and ab initio molecular dynamic simulation prove that 2D VN lattices have a high thermodynamic stability. These advantages demonstrate that the VN monolayers should be promising candidates for low-dimensional spintronic devices.

Effect of spin relaxations on the spin mixing conductances for a bilayer structure

The spin current can result in a spin-transfer torque in the normal-metal(NM)—ferromagnetic-insulator(FMI) or normal-metal(NM)—ferromagnetic-metal(FMM) bilayer. In the earlier study on this issue, the spin relaxations were ignored or introduced phenomenologically. In this paper, considering the FMM or FMI with spin relaxations described by a non-Hermitian Hamiltonian, we derive an effective spin-transfer torque and an effective spin mixing conductance in the non-Hermitian bilayer. The dependence of the effective spin mixing conductance on the system parameters (such as insulating gap, s-d coupling, and layer thickness) as well as the relations between the real part and the imaginary part of the effective spin mixing conductance are given and discussed. We find that the effective spin mixing conductance can be enhanced in the non-Hermitian system. This provides us with the possibility to enhance the spin mixing conductance.

Heat-Treatment-Induced Compositional Evolution and Magnetic State Transition in Magnetic Chalcogenide Semiconductor GeFeTe without Structural Phase Change

Control of magnetic properties in diluted magnetic semiconductors (DMSs) using external stimuli is a prerequisite for many spintronic applications. Fe-doped chalcogenide semiconductors are promising candidate materials for future spintronic devices since they offer the possibility of magnetic switching by their fast and reversible transition between amorphous and crystalline phases. However, for many proposed applications, magnetic manipulation in crystalline DMSs without a structural change is highly desirable. Thus, the ability to externally control the magnetism of magnetic chalcogenide semiconductors without structural phase change is of significance to enhance their application potential. Here we find that the annealing process could induce an antiferromagnetic (AFM)-ferromagnetic (FM) transition in magnetic chalcogenide semiconductor GeFeTe epilayers without deteriorating the crystal structure. The impact of heat treatment on magnetization in Ge_1-xFe_xTe film depends on Fe concentration. The present data indicate that the AFM-FM transition originates from the evolution of Fe phase composition. This study gives an insight into the correlation between Fe phase composition, electronic structure, and magnetism in GeFeTe thin films.

Spin-polarised electrons in a one-magnet-only Mott spin junction

The current flowing through a Mott spin junction depends on the relative spin orientation of the two ferromagnetic layers comprising the "source" and "drain" sides of the junction. The resulting current asymmetry is detected as giant or tunnelling magnetoresistance depending on whether the two ferromagnets are separated by a metal or an insulator. Based on the fundamental principles of reciprocity for spin-dependent electron scattering, one can envisage a one-magnet-only spin junction in which the source is non-magnetic, and the spin information is encoded by the spin polarisation of the electrons that have crossed or are backscattered from the drain magnetic layer. The practical significance of using an unpolarised source is that the state of the magnetic layer can be modified without affecting the process of probing it. Whether this reciprocity is realised in the actual junctions is not yet known. Here, we demonstrate a nano-sized, one-magnet-only Mott spin junction by measuring the finite spin polarisation of the backscattered electrons. Based on this finding, we conclude that since the junction acts as a spin filter, the magnetic layer must experience a spin transfer that could become detectable in view of the high current densities achievable in this technology.

Computationally Driven Two-Dimensional Materials Design: What Is Next?

Two-dimensional (2D) materials offer many key advantages to innovative applications, such as spintronics and quantum information processing. Theoretical computations have accelerated 2D materials design. In this issue of ACS Nano, Kumar et al. report that ferromagnetism can be achieved in functionalized nitride MXene based on first-principles calculations. Their computational results shed light on a potentially vast group of materials for the realization of 2D magnets. In this Perspective, we briefly summarize the promising properties of 2D materials and the role theory has played in predicting these properties. In addition, we discuss challenges and opportunities to boost the power of computation for the prediction of the "structure-property-process (synthesizability)" relationship of 2D materials.

Magnetization reversal in circular vortex dots of small radius

We present a detailed study of the magnetic behavior of Permalloy (Ni₈₀Fe₂₀ alloy) circular nanodots with small radii (30 nm and 70 nm) and different thicknesses (30 nm or 50 nm). Despite the small size of the dots, the measured hysteresis loops manifestly display the features of classical vortex behavior with zero remanence and lobes at high magnetic fields. This is remarkable because the size of the magnetic vortex core is comparable to the dot diameter, as revealed by magnetic force microscopy and micromagnetic simulations. The dot ground states are close to the border of the vortex stability and, depending on the dot size, the magnetization distribution combines attributes of the typical vortex, single domain states or even presents features resembling magnetic skyrmions. An analytical model of the dot magnetization reversal, accounting for the large vortex core size, is developed to explain the observed behavior, providing a rather good agreement with the experimental results. The study extends the understanding of magnetic nanodots beyond the classical vortex concept (where the vortex core spins have a negligible influence on the magnetic behavior) and can therefore be useful for improving emerging spintronic applications, such as spin-torque nano-oscillators. It also delimits the feasibility of producing a well-defined vortex configuration in sub-100 nm dots, enabling the intracellular magneto-mechanical actuation for biomedical applications.

Strain Controlled Ferromagnetic-Antiferromagnetic Transformation in Mn-Doped Silicene for Information Transformation Devices

A reliable control of magnetic states is central to the use of magnetic nanostructures. Here, by using state-of-the-art density-functional theory calculations, we find that Mn atoms decorated silicene has an anomalously fixed magnetic moment and a high Curie temperature. In addition, a tunable magnetic exchange coupling is achieved for Mn-silicene system with the application of biaxial strain, which induces a transformation from the ferromagnetic (FM) to the antiferromagnetic (AFM) state. As such, an atomic "bit" could be obtained by superimposing strain field once the FM and AFM states are referred to as "1" and "0". Such piezospin nanodevices, which convert mechanical energy into magnetic moment, would offer great potential for future information transmission, as they ultimately combine small size, high-speed operation, and low-power consumption.

Spin-polarized transport in helical membranes due to spin-orbit coupling

Spin-dependent electron transmission through a helical membrane, taking account of linear spin-orbit interaction, has been investigated by numerically solving the Schrödinger equation in cylindrical coordinates. It is shown that the spin precession is affected by the magnitude of geometric parameters and chirality of the membrane. This effect is also explained analytically using perturbation theory in the weak coupling regime. In the strong coupling regime, the current spin polarization is evident when the number of the open modes in leads is larger than that of the open channels in the membrane. Moreover, we find that the chirality of the helical membrane can determine the orientation of current spin polarization. Therefore, one may get totally opposite spin currents from helical membranes rolled in different directions.

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO _x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm² There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry

Molecular spintronics (spin + electronics), which aims to exploit both the spin degree of freedom and the electron charge in molecular devices, has recently received massive attention. Our recent experiments on molecular spintronics employ chiral molecules which have the unexpected property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this Account, we discuss new types of spin-dependent electrochemistry measurements and their use to probe the spin-dependent charge transport properties of nonmagnetic chiral conductive polymers and biomolecules, such as oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin (bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures. Spin-dependent electrochemical measurements were carried out by employing ferromagnetic electrodes modified with chiral molecules used as the working electrode. Redox probes were used either in solution or when directly attached to the ferromagnetic electrodes. During the electrochemical measurements, the ferromagnetic electrode was magnetized either with its magnetic moment pointing “UP” or “DOWN” using a permanent magnet (H = 0.5 T), placed underneath the chemically modified ferromagnetic electrodes. The spin polarization of the current was found to be in the range of 5–30%, even in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin blue O, show spin polarizarion that depends on the chirality. Because the nickel electrodes are susceptible to corrosion, we explored the effect of coating them with a thin gold overlayer. The effect of the gold layer on the spin polarization of the electrons ejected from the electrode was investigated. In addition, the role of the structure of the protein on the spin selective transport was also studied as a function of bias voltage and the effect of protein denaturation was revealed. In addition to “dark” measurements, we also describe photoelectrochemical measurements in which light is used to affect the spin selective electron transport through the chiral molecules. We describe how the excitation of a chromophore (such as CdSe nanoparticles), which is attached to a chiral working electrode, can flip the preferred spin orientation of the photocurrent, when measured under the identical conditions. Thus, chirality-induced spin polarization, when combined with light and magnetic field effects, opens new avenues for the study of the spin transport properties of chiral molecules and biomolecules and for creating new types of spintronic devices in which light and molecular chirality provide new functions and properties.

Piezo Voltage Controlled Planar Hall Effect Devices

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Theory of spin Hall magnetoresistance (SMR) and related phenomena

We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments.

Controlling spin relaxation with a cavity

Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the rate of spontaneous emission can be greatly enhanced by placing the quantum system in a resonant cavity. This effect has since been used extensively to control the lifetime of atoms and semiconducting heterostructures coupled to microwave or optical cavities, and is essential for the realization of high-efficiency single-photon sources. Here we report the application of this idea to spins in solids. By coupling donor spins in silicon to a superconducting microwave cavity with a high quality factor and a small mode volume, we reach the regime in which spontaneous emission constitutes the dominant mechanism of spin relaxation. The relaxation rate is increased by three orders of magnitude as the spins are tuned to the cavity resonance, demonstrating that energy relaxation can be controlled on demand. Our results provide a general way to initialize spin systems into their ground state and therefore have applications in magnetic resonance and quantum information processing. They also demonstrate that the coupling between the magnetic dipole of a spin and the electromagnetic field can be enhanced up to the point at which quantum fluctuations have a marked effect on the spin dynamics; as such, they represent an important step towards the coherent magnetic coupling of individual spins to microwave photons.

Large Conductance Switching in a Single-Molecule Device through Room Temperature Spin-Dependent Transport

Controlling the spin of electrons in nanoscale electronic devices is one of the most promising topics aiming at developing devices with rapid and high density information storage capabilities. The interface magnetism or spinterface resulting from the interaction between a magnetic molecule and a metal surface, or vice versa, has become a key ingredient in creating nanoscale molecular devices with novel functionalities. Here, we present a single-molecule wire that displays large (>10000%) conductance switching by controlling the spin-dependent transport under ambient conditions (room temperature in a liquid cell). The molecular wire is built by trapping individual spin crossover Fe(II) complexes between one Au electrode and one ferromagnetic Ni electrode in an organic liquid medium. Large changes in the single-molecule conductance (>100-fold) are measured when the electrons flow from the Au electrode to either an α-up or a β-down spin-polarized Ni electrode. Our calculations show that the current flowing through such an interface appears to be strongly spin-polarized, thus resulting in the observed switching of the single-molecule wire conductance. The observation of such a high spin-dependent conductance switching in a single-molecule wire opens up a new door for the design and control of spin-polarized transport in nanoscale molecular devices at room temperature.

Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.

Quantum transport in Rashba spin-orbit materials: a review

In this review article we describe spin-dependent transport in materials with spin-orbit interaction of Rashba type. We mainly focus on semiconductor heterostructures, however we consider topological insulators, graphene and hybrid structures involving superconductors as well. We start from the Rashba Hamiltonian in a two dimensional electron gas and then describe transport properties of two- and quasi-one-dimensional systems. The problem of spin current generation and interference effects in mesoscopic devices is described in detail. We address also the role of Rashba interaction on localisation effects in lattices with nontrivial topology, as well as on the Ahronov-Casher effect in ring structures. A brief section, in the end, describes also some related topics including the spin-Hall effect, the transition from weak localisation to weak anti localisation and the physics of Majorana fermions in hybrid heterostructures involving Rashba materials in the presence of superconductivity.

Observation of correlated spin-orbit order in a strongly anisotropic quantum wire system

Quantum wires with spin-orbit coupling provide a unique opportunity to simultaneously control the coupling strength and the screened Coulomb interactions where new exotic phases of matter can be explored. Here we report on the observation of an exotic spin-orbit density wave in Pb-atomic wires on Si(557) surfaces by mapping out the evolution of the modulated spin-texture at various conditions with spin- and angle-resolved photoelectron spectroscopy. The results are independently quantified by surface transport measurements. The spin polarization, coherence length, spin dephasing rate and the associated quasiparticle gap decrease simultaneously as the screened Coulomb interaction decreases with increasing excess coverage, providing a new mechanism for generating and manipulating a spin-orbit entanglement effect via electronic interaction. Despite clear evidence of spontaneous spin-rotation symmetry breaking and modulation of spin-momentum structure as a function of excess coverage, the average spin polarization over the Brillouin zone vanishes, indicating that time-reversal symmetry is intact as theoretically predicted.

Nanometre-scale probing of spin waves using single-electron spins

Pushing the frontiers of condensed-matter magnetism requires the development of tools that provide real-space, few-nanometre-scale probing of correlated-electron magnetic excitations under ambient conditions. Here we present a practical approach to meet this challenge, using magnetometry based on single nitrogen-vacancy centres in diamond. We focus on spin-wave excitations in a ferromagnetic microdisc, and demonstrate local, quantitative and phase-sensitive detection of the spin-wave magnetic field at ∼50 nm from the disc. We map the magnetic-field dependence of spin-wave excitations by detecting the associated local reduction in the disc's longitudinal magnetization. In addition, we characterize the spin–noise spectrum by nitrogen-vacancy spin relaxometry, finding excellent agreement with a general analytical description of the stray fields produced by spin–spin correlations in a 2D magnetic system. These complementary measurement modalities pave the way towards imaging the local excitations of systems such as ferromagnets and antiferromagnets, skyrmions, atomically assembled quantum magnets, and spin ice.

Exploring magnetic excitations and spin textures on the nanoscale may lead to new spintronic technologies and new understanding of condensed matter. Here, the authors demonstrate the potential of single-electron spins in diamond to image such excitations by characterizing spin waves in a ferromagnetic microdisc.

Electrical control of the exchange spring in antiferromagnetic metals

Electrical control of the exchange spring in antiferromagnetic metals is obtained in [Co/Pt]/IrMn Hall devices by using an ionic liquid, where the exchange spring could transfer the "force" and enable a deeper modulation depth in the IrMn. This work provides a new approach toward electrical modulation of the spin structures in metallic antiferromagnets, which should be significant in advancing the development of low-power-consumption antiferromagnet (AFM) spintronics.

Modeling the metastable dynamics of correlated structures

Metastable quantum dynamics of an asymmetric triangular cluster that is coupled to a reservoir is investigated. The dynamics is governed by bath-mediated transitions, which in part require a thermal activation process. The decay rate is controlled by tuning the excitation spectrum of the frustrated cluster. We use the master equation approach and construct transition operators in terms of many-body states. We analyze dynamics of observables and reveal metastability of an excited state and of a magnetically polarized ground state.

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites

Room-temperature ferromagnetism in Mn-doped chalcopyrites is a desire aspect when applying those materials to spin electronics. However, dominance of high Curie-temperatures due to cluster formation or inhomogeneities limited their consideration. Here we report how an external perturbation such as applied hydrostatic pressure in CdGeP₂:Mn induces a two serial magnetic transitions from ferromagnet to non-magnet state at room temperature. This effect is related to the unconventional properties of created MnP magnetic clusters within the host material. Such behavior is also discussed in connection with ab initio density functional calculations, where the structural properties of MnP indicate magnetic transitions as function of pressure as observed experimentally. Our results point out new ways to obtain controlled response of embedded magnetic clusters.

Tunable Charge and Spin Order in PrNiO_{3} Thin Films and Superlattices

We use polarized Raman scattering to probe lattice vibrations and charge ordering in 12 nm thick, epitaxially strained PrNiO_{3} films, and in superlattices of PrNiO_{3} with the band insulator PrAlO_{3}. A carefully adjusted confocal geometry is used to eliminate the substrate contribution to the Raman spectra. In films and superlattices under tensile strain which undergo a metal-insulator transition upon cooling, the Raman spectra reveal phonon modes characteristic of charge ordering. These anomalous phonons do not appear in compressively strained films, which remain metallic at all temperatures. For superlattices under compressive strain, the Raman spectra show no evidence of anomalous phonons indicative of charge ordering, while complementary resonant x-ray scattering experiments reveal antiferromagnetic order associated with a modest increase in resistivity upon cooling. This confirms theoretical predictions of a spin density wave phase driven by spatial confinement of the conduction electrons.

Three dimensional magnetic abacus memory

Stacking nonvolatile memory cells into a three-dimensional matrix represents a powerful solution for the future of magnetic memory. However, it is technologically challenging to access the data in the storage medium if large numbers of bits are stacked on top of each other. Here we introduce a new type of multilevel, nonvolatile magnetic memory concept, the magnetic abacus. Instead of storing information in individual magnetic layers, thereby having to read out each magnetic layer separately, the magnetic abacus adopts a new encoding scheme. It is inspired by the idea of second quantisation, dealing with the memory state of the entire stack simultaneously. Direct read operations are implemented by measuring the artificially engineered ‘quantised' Hall voltage, each representing a count of the spin-up and spin-down layers in the stack. This new memory system further allows for both flexible scaling of the system and fast communication among cells. The magnetic abacus provides a promising approach for future nonvolatile 3D magnetic random access memory.

Spin voltage generation through optical excitation of complementary spin populations

By exploiting the spin degree of freedom of carriers inside electronic devices, spintronics has a huge potential for quantum computation and dissipationless interconnects. Pure spin currents in spintronic devices should be driven by a spin voltage generator, able to drive the spin distribution out of equilibrium without inducing charge currents. Ideally, such a generator should operate at room temperature, be highly integrable with existing semiconductor technology, and not interfere with other spintronic building blocks that make use of ferromagnetic materials. Here we demonstrate a device that matches these requirements by realizing the spintronic equivalent of a photovoltaic generator. Whereas a photovoltaic generator spatially separates photoexcited electrons and holes, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite in-plane spin projections. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). The resulting light diffraction pattern features a spatially modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules.

Spin-dependent electron transport in protein-like single-helical molecules

We report on a theoretical study of spin-dependent electron transport through single-helical molecules connected by two nonmagnetic electrodes, and explain the experiment of significant spin-selective phenomenon observed in α-helical protein and the contradictory results between the protein and single-stranded DNA. Our results reveal that the α-helical protein is an efficient spin filter and the spin polarization is robust against the disorder. These results are in excellent agreement with recent experiments [Mishra D, et al. (2013) Proc Natl Acad Sci USA 110(37):14872-14876; Göhler B, et al. (2011) Science 331(6019):894-897] and may facilitate engineering of chiral-based spintronic devices.