Imaging and tuning polarity at SrTiO3 domain walls

Ferroelastic Twin-Wall-Mediated Ferroelectriclike Behavior and Bulk Photovoltaic Effect in SrTiO_{3}

Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bistable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO_{3} twin walls can be switched by an ultralow strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the twin walls can be deterministically rotated and realigned in specific directions under the strain gradient, which breaks the inversion symmetry of a sequence of walls and leads to a macroscopic polarization. The system can maintain polarity even after the constraint is removed. As a result, the polarization of twin walls can exhibit a ferroelectriclike hysteresis loop upon cyclic bending, namely flexoferroelectricity. Finally, we propose a scheme to experimentally detect the polarity of the twin wall by measuring the bulk photovoltaic responses. Our findings suggest a twin-wall-mediated flexoferroelectricity in SrTiO_{3}, which could be potentially exploited as functional elements in nanoelectronic devices design.

Two-Dimensional Ferroelasticity and Domain-Wall Flexoelectricity in HgX2 (X = Br or I) Monolayers

Electromechanical phenomena in two-dimensional (2D) materials can be related to sizable electric polarizations and switchable spontaneous ferroelasticity, allowing them to be used as miniaturized electronic and memory devices. Even in a parent centrosymmetric (nonpolar) ferroelastic (FE) material, non-zero polarization can be produced around the FE domain wall, owing to the strain-gradient-induced flexoelectricity. Compared with the negligibly weak flexoelectric effect in bulk compounds, significant electric polarizations can be expected in 2D FE materials that sustain a large elastic strain and a strain gradient. Using first-principles calculations, we predict that spontaneous 2D ferroelasticity and domain-wall flexoelectricity can be simultaneously realized in synthetic HgX₂ (X = Br or I) monolayers. The FE phase renders three oriented variants, which form FE domain walls with a large strain gradient and the associated domain-wall flexoelectric polarizations. Our thermodynamic stability analysis and kinetic barrier simulations allow us to manipulate the domain-wall flexoelectricity via applied mechanical stress, thereby enabling future electromechanical applications in nanoelectronics.

Octahedra-Tilted Control of Displacement Disorder and Dielectric Relaxation in Mn-Doped SrTiO3 Single Crystals

Strontium titanate SrTiO₃ (STO) is a canonical example of a quantum paraelectric, and its doping with manganese ions unlocks its potential as a quantum multiferroic candidate. However, to date, the specifics of incorporation of the manganese ion into the perovskite lattice and its impact on structure-property relationships are debatable questions. Herein, using high-precision X-ray diffraction of a Mn (2 atom %)-doped STO single crystal, clear fingerprints of the displacement disorder of Mn cations in the perovskite B-sublattice are observed. Moreover, near the temperature of the antiferrodistortive transition, the off-center Mn position splits in two, providing the unequal potential barrier's distribution for possible local atomic hopping. A link with this was found via analysis of the dielectric response that reveals two Arrhenius-type relaxation processes with similar activation energies (35 and 43 meV) and attempt frequencies (1 × 10¹¹ and ∼1.6 × 10¹⁰ Hz), suggesting similar dielectric relaxation mechanisms.

Avalanche criticality in LaAlO[Formula: see text] and the effect of aspect ratio

Ferroic domain dynamics, as a function of external stimuli, can be collectively described as scale-invariant avalanches characterised by a critical exponent that are sensitive to the complexity of the domain microstructure. The understanding and manipulation of these avalanches lies at the heart of developing novel applications such as neuromorphic computing. Here we combine in situ heating optical observations and mean-field analysis to investigate the collective domain behaviour in pure-ferroelastic lanthanum aluminate (LaAlO[Formula: see text]) as a function of aspect ratio, the ratio of sample length to width, where the movement of the domains is predominantly driven by thermal stresses via thermal expansion/contraction during heat cycling. Our observations demonstrate that the aspect ratio induces (1) distinctive domain microstructures at room temperature, (2) a deviation of dynamical behaviour at high temperatures and (3) critical exponent mixing in the higher aspect ratio samples that accompanies this behaviour. While the critical exponents of each aspect ratio fall within mean-field predicted values, we highlight the effect that the aspect ratio has in inducing exponent mixing. Hence, furthering our understanding towards tuning and controlling avalanches which is crucial for fundamental and applied research.

Anomalous transport in high-mobility superconducting SrTiO3 thin films

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO₃ films with a low-temperature mobility exceeding 42,000 cm² V^-1 s^-1 at a low carrier density of 3 × 10¹⁷ cm^-3 were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition where the third band becomes occupied, revealing dominant intraband scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- versus intraband scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO₃.

Domain Wall Dynamics in a Ferroelastic Spin Crossover Complex with Giant Magnetoelectric Coupling

Pinned and mobile ferroelastic domain walls are detected in response to mechanical stress in a Mn³⁺ complex with two-step thermal switching between the spin triplet and spin quintet forms. Single-crystal X-ray diffraction and resonant ultrasound spectroscopy on [Mn^III(3,5-diCl-sal₂(323))]BPh₄ reveal three distinct symmetry-breaking phase transitions in the polar space group series Cc → Pc → P1 → P1_(1/2). The transition mechanisms involve coupling between structural and spin state order parameters, and the three transitions are Landau tricritical, first order, and first order, respectively. The two first-order phase transitions also show changes in magnetic properties and spin state ordering in the Jahn–Teller-active Mn³⁺ complex. On the basis of the change in symmetry from that of the parent structure, Cc, the triclinic phases are also ferroelastic, which has been confirmed by resonant ultrasound spectroscopy. Measurements of magnetoelectric coupling revealed significant changes in electric polarization at both the Pc → P1 and P1 → P1_(1/2) transitions, with opposite signs. All these phases are polar, while P1 is also chiral. Remanent electric polarization was detected when applying a pulsed magnetic field of 60 T in the P1→ P1_(1/2) region of bistability at 90 K. Thus, we showcase here a rare example of multifunctionality in a spin crossover material where the strain and polarization tensors and structural and spin state order parameters are strongly coupled.

Scanning SQUID microscopy in a cryogen-free dilution refrigerator

We report a scanning superconducting quantum interference device (SQUID) microscope in a cryogen-free dilution refrigerator with a base temperature at the sample stage of at least 30 mK. The microscope is rigidly mounted to the mixing chamber plate to optimize thermal anchoring of the sample. The microscope housing fits into the bore of a superconducting vector magnet, and our design accommodates a large number of wires connecting the sample and sensor. Through a combination of vibration isolation in the cryostat and a rigid microscope housing, we achieve relative vibrations between the SQUID and the sample that allow us to image with micrometer resolution over a 150 µm range while the sample stage temperature remains at base temperature. To demonstrate the capabilities of our system, we show images acquired simultaneously of the static magnetic field, magnetic susceptibility, and magnetic fields produced by a current above a superconducting micrometer-scale device.

Observation of Zero-Field Transverse Resistance in AlO_{x}/SrTiO_{3} Interface Devices

Domain walls in AlO_{x}/SrTiO_{3} (AlO_{x}/STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based heterostructures: a finite transverse resistance observed in Hall bars in zero external magnetic field. This transverse resistance depends on the local domain wall configuration and hence changes with temperature, gate voltage, thermal cycling, and position along the sample and can even change sign as a function of these parameters. The transverse resistance is observed below ≃70  K but grows and changes significantly below ≃40  K, the temperature at which the domain walls become increasingly polar. Surprisingly, the transverse resistance is much larger in (111) oriented heterostructures in comparison to (001) oriented heterostructures. Measurements of the capacitance between the conducting interface and an electrode applied to the substrate, which reflect the dielectric constant of the STO, indicate that this difference may be related to the greater variation of the temperature-dependent dielectric constant with electric field when the electric field is applied in the [111] direction. The finite transverse resistance can be explained inhomogeneous current flow due to the preferential transport of current along domain walls that are askew to the nominal direction of the injected current.

Non-universal current flow near the metal-insulator transition in an oxide interface

In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO₃/SrTiO₃ interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming.

Macroscopic properties usually follow algebraic scaling laws near phase transitions. Here, the authors investigate the scaling properties of the metal‐insulator transition at the LaAlO3/SrTiO3 interface, finding that coupling between structural and electronic properties prevents the universal behavior.

Unveiling Temperature-Induced Structural Domains and Movement of Oxygen Vacancies in SrTiO3 with Graphene

Heterointerfaces coupling complex oxides exhibit coexisting functional properties such as magnetism, superconductivity, and ferroelectricity, often absent in their individual constituent. SrTiO₃ (STO), a canonical band insulator, is an active constituent of such heterointerfaces. Temperature-, strain-, or mechanical stress-induced ferroelastic transition leads to the formation of narrow domains and domain walls in STO. Such ferroelastic domain walls have been studied using imaging or transport techniques and, often, the findings are influenced by the choice and interaction of the electrodes with STO. In this work, we use graphene as a unique platform to unveil the movement of oxygen vacancies and ferroelastic domain walls near the STO surface by studying the temperature and gate bias dependence of charge transport in graphene. By sweeping the back gate voltage, we observe antihysteresis in graphene typically observed in conventional ferroelectric oxides. Interestingly, we find features in antihysteresis that are related to the movement of domain walls and of oxygen vacancies in STO. We ascertain this by analyzing the time dependence of the graphene square resistance at different temperatures and gate bias. Density functional calculations estimate the surface polarization and formation energies of layer-dependent oxygen vacancies in STO. This corroborates quantitatively with the activation energies determined from the temperature dependence of the graphene square resistance. Introduction of a hexagonal boron nitride (hBN) layer, of varying thicknesses, between graphene and STO leads to a gradual disappearance of the observed features, implying the influence of the domain walls onto the potential landscape in graphene.

Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces

We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the two-dimensional electron gas usually observed at interfaces between STO and LTO or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates the presence of spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.

Site-specific spectroscopic measurement of spin and charge in (LuFeO3)m/(LuFe2O4)1 multiferroic superlattices

Interface materials offer a means to achieve electrical control of ferrimagnetism at room temperature as was recently demonstrated in (LuFeO3)m/(LuFe2O4)1 superlattices. A challenge to understanding the inner workings of these complex magnetoelectric multiferroics is the multitude of distinct Fe centres and their associated environments. This is because macroscopic techniques characterize average responses rather than the role of individual iron centres. Here, we combine optical absorption, magnetic circular dichroism and first-principles calculations to uncover the origin of high-temperature magnetism in these superlattices and the charge-ordering pattern in the m = 3 member. In a significant conceptual advance, interface spectra establish how Lu-layer distortion selectively enhances the Fe2+ →  Fe3+ charge-transfer contribution in the spin-up channel, strengthens the exchange interactions and increases the Curie temperature. Comparison of predicted and measured spectra also identifies a non-polar charge ordering arrangement in the LuFe2O4 layer. This site-specific spectroscopic approach opens the door to understanding engineered materials with multiple metal centres and strong entanglement.

Flexopiezoelectricity at ferroelastic domain walls in WO3 films

The emergence of a domain wall property that is forbidden by symmetry in bulk can offer unforeseen opportunities for nanoscale low-dimensional functionalities in ferroic materials. Here, we report that the piezoelectric response is greatly enhanced in the ferroelastic domain walls of centrosymmetric tungsten trioxide thin films due to a large strain gradient of 10⁶ m⁻¹, which exists over a rather wide width (~20 nm) of the wall. The interrelationship between the strain gradient, electric polarity, and the electromechanical property is scrutinized by detecting of the lattice distortion using atomic scale strain analysis, and also by detecting the depolarized electric field using differential phase contrast technique. We further demonstrate that the domain walls can be manipulated and aligned in specific directions deterministically using a scanning tip, which produces a surficial strain gradient. Our findings provide the comprehensive observation of a flexopiezoelectric phenomenon that is artificially controlled by externally induced strain gradients.

Observation of a strain-gradient-induced piezoresponse at domain walls remains a challenge. Here, the authors find the piezoelectric response to be enhanced in the ferroelastic domain walls of centrosymmetric tungsten trioxide thin films due to a large strain gradient over a wide width of the wall.

Electron Trapping Mechanism in LaAlO_{3}/SrTiO_{3} Heterostructures

In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen that conclusion. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO_{3} and argue that such electron trapping is a universal phenomenon in SrTiO_{3}-based two-dimensional electron systems.

Ferroelectric switching in ferroelastic materials with rough surfaces

Electric switching of non-polar bulk crystals is shown to occur when domain walls are polar in ferroelastic materials and when rough surfaces with steps on an atomic scale promote domain switching. All domains emerging from surface nuclei possess polar domain walls. The progression of domains is then driven by the interaction of the electric field with the polarity of domain boundaries. In contrast, smooth surfaces with higher activation barriers prohibit effective domain nucleation. We demonstrate the existence of an electrically driven ferroelectric hysteresis loop in a non-ferroelectric, ferroelastic bulk material.

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO₃/SrTiO₃ interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modeling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.

Scanning SQUID microscopy in a cryogen-free cooler

Scanning superconducting quantum interference device (SQUID) microscopy is a powerful tool for investigating electronic states at surfaces and interfaces by mapping their magnetic signal. SQUID operation requires cryogenic temperatures, which are typically achieved by immersing the cryostat in liquid helium. Making a transition to cryogen free systems is desirable, but has been challenging, as electric noise and vibrations are increased in such systems. We report on the successful operation of a scanning SQUID microscope in a modified Montana Instruments cryogen-free cooler with a base temperature of 4.3 K. We demonstrate scanning SQUID measurements with flux noise performance comparable to a wet system and correlate the sensor-sample vibrations to the cryocooler operation frequencies. In addition, we demonstrate successful operation in a variety of SQUID operation modes, including mapping static magnetic fields, measurement of local susceptibility, and spatial mapping of current flow distribution.

Dynamic Multiferroicity of a Ferroelectric Quantum Critical Point

Quantum matter hosts a large variety of phases, some coexisting, some competing; when two or more orders occur together, they are often entangled and cannot be separated. Dynamical multiferroicity, where fluctuations of electric dipoles lead to magnetization, is an example where the two orders are impossible to disentangle. Here we demonstrate an elevated magnetic response of a ferroelectric near the ferroelectric quantum critical point (FE QCP), since magnetic fluctuations are entangled with ferroelectric fluctuations. We thus suggest that any ferroelectric quantum critical point is an inherent multiferroic quantum critical point. We calculate the magnetic susceptibility near the FE QCP and find a region with enhanced magnetic signatures near the FE QCP and controlled by the tuning parameter of the ferroelectric phase. The effect is small but observable-we propose quantum paraelectric strontium titanate as a candidate material where the magnitude of the induced magnetic moments can be ∼5×10^{-7}  μ_{B} per unit cell near the FE QCP.

Bimodal Phase Diagram of the Superfluid Density in LaAlO_{3}/SrTiO_{3} Revealed by an Interfacial Waveguide Resonator

We explore the superconducting phase diagram of the two-dimensional electron system at the LaAlO_{3}/SrTiO_{3} interface by monitoring the frequencies of the cavity modes of a coplanar waveguide resonator fabricated in the interface itself. We determine the phase diagram of the superconducting transition as a function of the temperature and electrostatic gating, finding that both the superfluid density and the transition temperature follow a dome shape but that the two are not monotonically related. The ground state of this two-dimensional electron system is interpreted as a Josephson junction array, where a transition from long- to short-range order occurs as a function of the electronic doping. The synergy between correlated oxides and superconducting circuits is revealed to be a promising route to investigate these exotic compounds, complementary to standard magnetotransport measurements.

Glasslike Dynamics of Polar Domain Walls in Cryogenic SrTiO_{3}

Polar and highly mobile domain walls in SrTiO_{3} move under electric and elastic fields. Two vastly different timescales dominate their dynamical behavior. The previously observed fast changes lead to anomalies near 40 K where the elastic moduli soften and the polarity of the walls becomes strong. Keeping the sample under isothermal conditions leads to a new and unexpected phenomenon: The softening vanishes over timescales of days while the piezoelectricity of the sample remains unchanged. The hardening follows glass dynamics below an onset at T^{*}≈40  K. The timescale of the hardening is strongly temperature dependent and can be followed experimentally down to 34 K when the relaxation is not completed within two days. The relaxation time of a stretched exponential decay increases exponentially with the decreasing temperature. This relaxation process follows similar dynamics after zero-field cooling and after applying or removing an electric field. The sluggish behavior is attributed to collective interactions of domain patterns following overdamped glass dynamics rather than ballistic dynamics.

Dielectric Response of Quantum Critical Ferroelectric as a Function of Pressure

In this work we report for the first time measurements of the dielectric loss of single-crystal SrTiO₃ under the application of hydrostatic pressure up to 20 kbar and temperatures down to 200 mK which allow us to comment on the evolution of new fundamental material properties and their relationship with the recently discovered quantum critical phenomena in this material. The well known 18 K peak or shoulder was no longer observed after pressure was applied, even after subsequently removing it, suggesting it is associated with the twin walls formed at the 110 K cubic-tetragonal transition. The family of familiar peaks were all seen to increase in temperature linearly with pressure and the height of the 9.4 K peak was drastically suppressed by even the smallest pressures. This peak is discussed in the context of a postulated ferroelectric quantum critical point in SrTiO₃ and the behaviour of its size linked to the position of this point on the recently established phase diagram.

Scanning SQUID View of Oxide Interfaces

The emergence of states of matter in low-dimensional systems is one of the most intriguing topics in condensed matter physics. Interfaces between nonmagnetic, insulating oxides are found to give rise to surprising behaviors, such as metallic conductivity, superconductivity, and magnetism. Sensitive, noninvasive local characterization tools are essential for understanding the electronic and magnetic behavior of these systems. Here, the scanning superconducting quantum interference device (SQUID) technique for local magnetic imaging is described and its contribution to the field of oxide interfaces is reviewed.

Insights into Crystal Facets of Perovskite SrSnO3 as High-Performance Photocatalysts toward Environmental Remediation

To gain in-depth insights into the relevant exposed crystal planes for the photocatalytic performance of perovskite-structured oxides, SrSnO₃ nanocrystals with different microstructures were synthesized and their photocatalytic activity for the degradation of simulated dye was investigated. The as-obtained orthorhombic SrSnO₃ nanorods with exposed {001} crystal planes showed higher photocatalytic activity for decomposing methylene blue than that of SrSnO₃ nanoribbons with exposed {111} crystal planes. The surface atomic configurations revealed that the quantity of SnO₂ overlayer on the {001} crystal facets is slightly greater than that on {111} crystal planes, which results in exposed {001} crystal facets of the SrSnO₃ nanorods that can exhibit better activity in the photocatalytic process, due to fewer lattice defects, which act as traps for photogenerated charge carriers to decrease the recombination of photoexcited electrons and holes. This originated from narrowing of the crystal face distance and slight variation of the unit cell parameters; the crystallographic axis became shorter and the value of lattice strain became smaller. As a result, SrSnO₃ nanocrystals exhibited different surface behavior under post-treatment conditions and exhibited variation in the photocatalytic properties. The findings reported herein highlight the importance of probing the properties of surface facets in the evaluation of the photocatalytic performance of ternary metal oxides.

Low-Temperature Dielectric Anisotropy Driven by an Antiferroelectric Mode in SrTiO_{3}

Strontium titanate (SrTiO_{3}) is the quintessential material for oxide electronics. One of its hallmark features is the transition, driven by antiferrodistortive (AFD) lattice modes, from a cubic to a ferroelastic low-temperature phase. Here we investigate the evolution of the ferroelastic twin walls upon application of an electric field. Remarkably, we find that the dielectric anisotropy of tetragonal SrTiO_{3}, rather than the intrinsic domain wall polarity, is the main driving force for the motion of the twins. Based on a combined first-principles and Landau-theory analysis, we show that such anisotropy is dominated by a trilinear coupling between the polarization, the AFD lattice tilts, and a previously overlooked antiferroelectric (AFE) mode. We identify the latter AFE phonon with the so-called "R mode" at ∼440  cm^{-1}, which was previously detected in IR experiments, but whose microscopic nature was unknown.