1
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Chu L, Gao S, Li Z, Zhu H, Liu W, Jia Y, Chen F. van der Waals NbOCl 2 Nanodisks for Enhanced Second-Harmonic Generation. NANO LETTERS 2024. [PMID: 39564768 DOI: 10.1021/acs.nanolett.4c05114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/21/2024]
Abstract
Niobium oxide dichloride (NbOCl2), a van der Waals crystal, exhibits exceptional second-harmonic generation (SHG) with high conversion efficiency, making it a promising candidate for on-chip quantum light sources, photon modulators, and sensors. To increase its suitability for integrated photonic systems, it is crucial to explore strategies for further improving optical nonlinear conversion efficiency. In this article, dielectric metasurfaces are employed to enhance SHG from patterned NbOCl2 nanodisks. By precisely tuning their geometric parameters to achieve optical resonance near the excitation wavelength, a remarkable 25-fold enhancement in second-harmonic emission at 400 nm is achieved in nanodisks compared to the unpatterned thin film. The strong field enhancement within the NbOCl2 nanodisks at nanophotonic resonances contributes to the observed increase in SHG. This work offers an effective strategy for boosting SHG in van der Waals NbOCl2 thin films, paving the way for the development of efficient nonlinear optical components in integrated nanophotonics.
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Affiliation(s)
- Lingrui Chu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Siying Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ziqi Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Han Zhu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Weijie Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yuechen Jia
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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2
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Bradford J, Dewes BT, Shiffa M, Cottam ND, Rahman K, Cheng TS, Novikov SV, Makarovsky O, O'Shea JN, Beton PH, Lara-Avila S, Harknett J, Greenaway MT, Patanè A. Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2404809. [PMID: 39169700 DOI: 10.1002/smll.202404809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2024] [Revised: 07/26/2024] [Indexed: 08/23/2024]
Abstract
2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well-controlled, tunable, and scalable. Here, these challenges are addressed by a new approach, which combines molecular beam epitaxy and in situ band engineering in ultra-high vacuum of semiconducting gallium selenide (GaSe) on graphene. In situ studies by electron diffraction, scanning probe microscopy, and angle-resolved photoelectron spectroscopy reveal that atomically-thin layers of GaSe align in the layer plane with the underlying lattice of graphene. The GaSe/graphene heterostructure, referred to as 2semgraphene, features a centrosymmetric (group symmetry D3d) polymorph of GaSe, a charge dipole at the GaSe/graphene interface, and a band structure tunable by the layer thickness. The newly-developed, scalable 2semgraphene is used in optical sensors that exploit the photoactive GaSe layer and the built-in potential at its interface with the graphene channel. This proof of concept has the potential for further advances and device architectures that exploit 2semgraphene as a functional building block.
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Affiliation(s)
- Jonathan Bradford
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Benjamin T Dewes
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Mustaqeem Shiffa
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Nathan D Cottam
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Kazi Rahman
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Tin S Cheng
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Sergei V Novikov
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Oleg Makarovsky
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - James N O'Shea
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Peter H Beton
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Samuel Lara-Avila
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 412 96, Sweden
- National Physical Laboratory, Hampton Road, Teddington, TW11 0LW, UK
| | - Jordan Harknett
- Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK
| | - Mark T Greenaway
- Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK
| | - Amalia Patanè
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
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3
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Liu Z, Chen B, Wang X, Qiu G, Cao Q, Wei D, Liu J. Enhanced vertical second harmonic generation from layered GaSe coupled to photonic crystal circular Bragg resonators. NANOPHOTONICS (BERLIN, GERMANY) 2024; 13:4029-4035. [PMID: 39634950 PMCID: PMC11501048 DOI: 10.1515/nanoph-2024-0282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/25/2024] [Accepted: 07/28/2024] [Indexed: 12/07/2024]
Abstract
Two-dimensional (2D) layered materials without centrosymmetry, such as GaSe, have emerged as promising novel optical materials due to large second-order nonlinear susceptibilities. However, their nonlinear responses are severely limited by the short interaction between the 2D materials and light, which should be improved by coupling them with photonic structures with strong field confinement. Here, we theoretically design photonic crystal circular Bragg gratings (CBG) based on hole gratings with a quality factor as high as Q = 8 × 103, a mode volume as small as V = 1.18 (λ/n)3, and vertical emission of light field in silicon nitride thin film platform. Experimentally, we achieved a Q value up to nearly 4 × 103, resulting in a 1,200-fold enhancement of second harmonic generation from GaSe flakes with a thickness of 50 nm coupling to the CBG structures under continuous-wave excitation. Our work endows silicon-based photonic platforms with significant second-order nonlinear effect, which is potentially applied in on-chip quantum light sources and nonlinear frequency conversion.
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Affiliation(s)
- Zhuojun Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Bo Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Xuying Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Guixin Qiu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Qitao Cao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Dunzhao Wei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
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4
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Zhao Q, Chen L, Liang F, Wang S, Wang G, Yu H, Zhang H. Angular Engineering Strategy for Enhanced Surface Nonlinear Frequency Conversion in Centrosymmetric Topological Semimetal HfGe 0.92Te. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310438. [PMID: 38165969 DOI: 10.1002/adma.202310438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 12/22/2023] [Indexed: 01/04/2024]
Abstract
Surface nonlinear optics are essential for developments in integrated photonics and micro/nano optoelectronics. However, the nonlinear optical conversion efficiency on a surface is restricted by the finite nonlinear susceptibility of matter and the intrinsic atomic-layered interaction length between light and matter. In this work, based on an angular engineering strategy, it is demonstrated that the centrosymmetric topological semimetal HfGe0.92Te crystal has a giant and anisotropic surface second-order nonlinear susceptibility up to 5535 ± 308 pm V-1 and exhibits efficient and unprecedented second-harmonic generation (SHG). The maximum optical conversion efficiency is found to be up to 3.75‰, which is 104 times higher than that obtained from a silicon surface. Because of the linear dispersion over a wide range of energies around the Dirac points, this high conversion efficiency can be maintained with SHG wavelengths ranging from the visible region (779 nm) to the deep-UV region (257.5 nm). This study can facilitate the development of topological photonics and integrated nonlinear photonics based on topological semimetals.
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Affiliation(s)
- Qiming Zhao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Long Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
- Institute of Materials Science, TU Darmstadt, 64287, Darmstadt, Germany
| | - Shuxian Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Gang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haohai Yu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Huaijin Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
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5
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Fu Q, Cong X, Xu X, Zhu S, Zhao X, Liu S, Yao B, Xu M, Deng Y, Zhu C, Wang X, Kang L, Zeng Q, Lin ML, Wang X, Tang B, Yang J, Dong Z, Liu F, Xiong Q, Zhou J, Wang Q, Li X, Tan PH, Tay BK, Liu Z. Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306330. [PMID: 37737448 DOI: 10.1002/adma.202306330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 09/05/2023] [Indexed: 09/23/2023]
Abstract
Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2) ), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.
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Affiliation(s)
- Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Xiaodong Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Sheng Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Bingqing Yao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Manzhang Xu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xiaowei Wang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lixing Kang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Xingli Wang
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Bijun Tang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jianqun Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Zhili Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Jiadong Zhou
- Key Lab of advanced optoelectronic quantum architecture and measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qijie Wang
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
- School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xingji Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Beng Kang Tay
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Blk S9, Level 9, 4 Science Drive 2, Singapore, 117544, Singapore
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6
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Xiao Q, Xie J, Yao G, Lin K, Zhang HL, Qian L, Liu K, Zhang J. Optical Fibers Embedded with As-Grown Carbon Nanotubes for Ultrahigh Nonlinear Optical Responses. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303046. [PMID: 37227940 DOI: 10.1002/adma.202303046] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 05/15/2023] [Indexed: 05/27/2023]
Abstract
Photonic crystal fiber (PCF) embedded with functional materials has demonstrated diverse applications ranging from ultrafast lasers, optical communication to chemical sensors. Many efforts have been made to fabricating carbon nanotube (CNT) based optical fibers by ex situ transfer method; however, often suffer poor uniformity and coverage. Here, the direct growth of CNTs on the inner walls of PCFs by the chemical vapor deposition (CVD) method is reported. A two-step growth method is developed to control the narrow diameter distribution of CNTs to ensure desirable nanotube optical transitions. In the as-fabricated CNT- embedded fiber, third-harmonic generation (THG) has been enhanced by ≈15 times compared with flat CNT film on fused silica. A dual-wavelength all-fiber mode-locked ultrafast laser (≈1561 and ≈1064 nm) is further demonstrated by integrating the 1.36±0.15 nm-diameter CNTs into two kinds of photonic bandgap hollow core PCF (named HC-1550 and HC-1060) as saturable absorbers, using their S11 (≈0.7 eV) and S22 (≈1.2 eV) interband transition respectively. The fiber laser shows stable output of ≈10 mW, ≈800 fs pulse width, and ≈71 MHz repetition rate at 1561 nm wavelength. These results can enable the large-scale applications of CNTs in PCF-based optical devices.
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Affiliation(s)
- Qi Xiao
- Beijing Science and Engineering Center for Nanocarbons, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China
| | - Jin Xie
- State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Guangjie Yao
- State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Kaifeng Lin
- State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Hao-Li Zhang
- State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China
| | - Liu Qian
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Jin Zhang
- Beijing Science and Engineering Center for Nanocarbons, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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7
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Wang X, Ma W, Fu Y, Liu X, Tao Z, Song Y, Dong K, Jiang H. Two-dimensional material integrated micro-nano fiber, the new opportunity in all-optical signal processing. NANOPHOTONICS (BERLIN, GERMANY) 2023; 12:2073-2101. [PMID: 39634048 PMCID: PMC11501685 DOI: 10.1515/nanoph-2023-0223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 05/01/2023] [Indexed: 12/07/2024]
Abstract
With the development of all-optical networks, all-optical devices have become a research hotspot in recent years. Two-dimensional materials, represented by graphene and black phosphorus, have attracted great interest in the scientific community due to their excellent optical, electrical, magnetic, and mechanical properties. Bridging the gap between fiber optics and nanotechnology, microfibers can interact with light and matter at the micro or even nanoscale. By combining two-dimensional materials with microfibers, composite waveguides can be formed. They have the advantages of high nonlinear effect, all-fiber structure, and high damage threshold, etc. The composite waveguide can be directly applied to optical fiber communication systems, and plays an important role in the field of all-optical signal processing with a huge application prospect. In this review, the properties of typical 2D materials are first introduced. Next, the preparation methods of the relevant equipments are introduced and compared. Then, the all-optical signal processing technology based on 2D material-integrated microfiber composite waveguide is reviewed. The latest developments of all-optical modulators, all-optical wavelength converters, all-optical logic gates and all-optical thresholding devices are presented. Finally, the challenges and opportunities for the future development of 2D materials-integrated microfiber optoelectronic devices are summarized.
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Affiliation(s)
- Xinyu Wang
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Wanzhuo Ma
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Yanwei Fu
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Xianzhu Liu
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Zonghui Tao
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Yansong Song
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Keyan Dong
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Huilin Jiang
- College of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
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8
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Electronic Structures and NLO Properties of a Series of TMDs Lateral‐Core–Shell Heterostructures Quantum Dots. ADVANCED THEORY AND SIMULATIONS 2023. [DOI: 10.1002/adts.202200791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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9
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Ma Y, Jiang B, Guo Y, Zhang P, Cheng T, Gan X, Zhao J. Suspended-core fiber with embedded GaSe nanosheets for second harmonic generation. OPTICS EXPRESS 2022; 30:32438-32446. [PMID: 36242305 DOI: 10.1364/oe.465248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2022] [Accepted: 08/05/2022] [Indexed: 06/16/2023]
Abstract
We report an all-fiber scheme for the second harmonic generation (SHG) by embedding gallium selenide (GaSe) nanosheets into a suspended-core fiber (SCF). Based on modes analysis and theoretical calculations, the phase-matching modes from multiple optional modes in the SHG process and the optimal SCF length are determined by calculating the effective refractive index and balancing the SHG growth and transmission loss. Due to the long-distance interaction between pumped fundamental mode and GaSe nanosheets around the suspended core, an SHG signal is observed under a milliwatt-level pump light, and exhibits a quadratic growth with the increased pump power. The SHG process is also realized in a broad wavelength range by varying the pump in the range of 1420∼1700 nm. The SCF with the large air cladding and suspended core as an excellent platform can therefore be employed to integrate low-dimensional nonlinear materials, which holds great promise for the applications of all-fiber structures in new light source generating, signal processing and fiber sensing.
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10
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Wang J, Han N, Luo ZD, Zhang M, Chen X, Liu Y, Hao Y, Zhao J, Gan X. Electrically Tunable Second Harmonic Generation in Atomically Thin ReS 2. ACS NANO 2022; 16:6404-6413. [PMID: 35426299 DOI: 10.1021/acsnano.2c00514] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than 1 order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.
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Affiliation(s)
- Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Zheng-Dong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yue Hao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
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11
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Liu Z, Wang J, Chen B, Wei Y, Liu W, Liu J. Giant Enhancement of Continuous Wave Second Harmonic Generation from Few-Layer GaSe Coupled to High- Q Quasi Bound States in the Continuum. NANO LETTERS 2021; 21:7405-7410. [PMID: 34232665 DOI: 10.1021/acs.nanolett.1c01975] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) layered materials such as GaSe recently have emerged as novel nonlinear optical materials with exceptional properties. Although exhibiting large nonlinear susceptibilities, the nonlinear responses of 2D materials are generally limited by the short interaction lengths with light, thus further enhancement via resonant photonic nanostructures is highly desired for building high-efficiency nonlinear devices. Here, we demonstrate a giant second-harmonic generation (SHG) enhancement by coupling 2D GaSe flakes to silicon metasurfaces supporting quasi-bound states in the continuum (quasi-BICs) under continuous-wave (CW) operation. Taking advantage of both high-quality factors and large mode areas of quasi-BICs, SHG from a GaSe flake is uniformly enhanced by nearly 4 orders of magnitude, which is promising for high-power coherent light sources. Our work provides an effective approach for enhancing nonlinear optical processes in 2D materials within the framework of silicon photonics, which also brings second-order nonlinearity associated with 2D materials to silicon photonic devices.
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Affiliation(s)
- Zhuojun Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Jiayi Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Bo Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yuming Wei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenjing Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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Chen JH, Xiong YF, Xu F, Lu YQ. Silica optical fiber integrated with two-dimensional materials: towards opto-electro-mechanical technology. LIGHT, SCIENCE & APPLICATIONS 2021; 10:78. [PMID: 33854031 PMCID: PMC8046821 DOI: 10.1038/s41377-021-00520-x] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2020] [Revised: 03/14/2021] [Accepted: 03/29/2021] [Indexed: 05/27/2023]
Abstract
In recent years, the integration of graphene and related two-dimensional (2D) materials in optical fibers have stimulated significant advances in all-fiber photonics and optoelectronics. The conventional passive silica fiber devices with 2D materials are empowered for enhancing light-matter interactions and are applied for manipulating light beams in respect of their polarization, phase, intensity and frequency, and even realizing the active photo-electric conversion and electro-optic modulation, which paves a new route to the integrated multifunctional all-fiber optoelectronic system. This article reviews the fast-progress field of hybrid 2D-materials-optical-fiber for the opto-electro-mechanical devices. The challenges and opportunities in this field for future development are discussed.
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Affiliation(s)
- Jin-Hui Chen
- Institute of Electromagnetics and Acoustics, Xiamen University, Xiamen, 361005, China
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yi-Feng Xiong
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Fei Xu
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Yan-Qing Lu
- College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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13
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Yan H, Liang X, Dong S, Lei Y, Zhang G, Chen R, Hu J, Jing M, Wang S, Su X, Qin C, Xiao L, Jia S. Exploration of exciton dynamics in GaTe nanoflakes via temperature- and power-dependent time-resolved photoluminescence spectra. OPTICS EXPRESS 2021; 29:8880-8889. [PMID: 33820329 DOI: 10.1364/oe.418749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Accepted: 02/27/2021] [Indexed: 06/12/2023]
Abstract
GaTe nanoflakes have been receiving much research attention recently due to their applications in optoelectronic devices, such as anisotropic non-volatile memory, solar cells, and high-sensitivity photodetectors from the ultraviolet to the visible region. Further applications, however, have been impeded due to the limited understanding of their exciton dynamics. In this work we perform temperature- and power-dependent time-resolved photoluminescence (PL) spectra to comprehensively investigate the exciton dynamics of GaTe nanoflakes. Temperature-dependent PL measurements manifest that spectral profiles of GaTe nanoflakes change dramatically from cryogenic to room temperature, where the bound exciton and donor-to-acceptor pair transition normally disappear above 100 K, while the charged exciton survives to room temperature. The lifetimes of these excitons and their evolution vs temperature have been uncovered by time-resolved PL spectra. Further measurements reveal the entirely different power-dependent exciton behaviors of GaTe nanoflakes between room and cryogenic temperatures. The underlying mechanisms have been proposed to explore the sophisticated exciton dynamics within GaTe nanoflakes. Our results offer a more thorough understanding of the exciton dynamics of GaTe nanoflakes, enabling further progress in engineering GaTe-based applications, such as photodetectors, light-emitting diodes, and nanoelectronics.
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14
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Hao Z, Jiang B, Hou Y, Li C, Yi R, Ji Y, Li J, Li A, Gan X, Zhao J. Continuous-wave pumped frequency upconversions in an InSe-integrated microfiber. OPTICS LETTERS 2021; 46:733-736. [PMID: 33577501 DOI: 10.1364/ol.413451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Accepted: 01/07/2021] [Indexed: 06/12/2023]
Abstract
We report the achievement of continuous-wave (CW)-pumped second-harmonic generation (SHG) and sum frequency generation (SFG) in a layered indium selenide (InSe)-integrated microfiber. As a result of the strong interaction between the InSe nanosheets and the evanescent field, the second-order nonlinear processes are greatly enhanced in the InSe-integrated microfiber pumped by a few milliwatt CW lasers. The experimental results reveal that the intensities of SHG and SFG are quadratic and linear dependencies with the incident pump power, respectively, which is consistent with theoretical predictions. Additionally, the SHG intensity is strongly polarization-dependent on the nonaxisymmetrical distribution of the InSe nanosheets around the microfiber, providing the possibility of the SHG-polarized manipulation. The proposed device has the potential to be integrable into all-fiber systems for nonlinear applications.
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15
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Zuo Y, Yu W, Liu C, Cheng X, Qiao R, Liang J, Zhou X, Wang J, Wu M, Zhao Y, Gao P, Wu S, Sun Z, Liu K, Bai X, Liu Z. Optical fibres with embedded two-dimensional materials for ultrahigh nonlinearity. NATURE NANOTECHNOLOGY 2020; 15:987-991. [PMID: 32958935 DOI: 10.1038/s41565-020-0770-x] [Citation(s) in RCA: 52] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 08/26/2020] [Indexed: 05/06/2023]
Abstract
Nonlinear optical fibres have been employed for a vast number of applications, including optical frequency conversion, ultrafast laser and optical communication1-4. In current manufacturing technologies, nonlinearity is realized by the injection of nonlinear materials into fibres5-7 or the fabrication of microstructured fibres8-10. Both strategies, however, suffer from either low optical nonlinearity or poor design flexibility. Here, we report the direct growth of MoS2, a highly nonlinear two-dimensional material11, onto the internal walls of a SiO2 optical fibre. This growth is realized via a two-step chemical vapour deposition method, where a solid precursor is pre-deposited to guarantee a homogeneous feedstock before achieving uniform two-dimensional material growth along the entire fibre walls. By using the as-fabricated 25-cm-long fibre, both second- and third-harmonic generation could be enhanced by ~300 times compared with monolayer MoS2/silica. Propagation losses remain at ~0.1 dB cm-1 for a wide frequency range. In addition, we demonstrate an all-fibre mode-locked laser (~6 mW output, ~500 fs pulse width and ~41 MHz repetition rate) by integrating the two-dimensional-material-embedded optical fibre as a saturable absorber. Initial tests show that our fabrication strategy is amenable to other transition metal dichalcogenides, making these embedded fibres versatile for several all-fibre nonlinear optics and optoelectronics applications.
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Affiliation(s)
- Yonggang Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Wentao Yu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Can Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xu Cheng
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Ruixi Qiao
- International Centre for Quantum Materials, Peking University, Beijing, China
| | - Jing Liang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xu Zhou
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Jinhuan Wang
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Peking University, Beijing, China
| | - Yun Zhao
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Peking University, Beijing, China
| | - Shiwei Wu
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, Aalto, Finland
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- International Centre for Quantum Materials, Peking University, Beijing, China.
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Zhongfan Liu
- Center for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
- Beijing Graphene Institute (BGI), Beijing, China.
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Ma H, Liang J, Hong H, Liu K, Zou D, Wu M, Liu K. Rich information on 2D materials revealed by optical second harmonic generation. NANOSCALE 2020; 12:22891-22903. [PMID: 33201974 DOI: 10.1039/d0nr06051h] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) materials have brought a spectacular revolution in fundamental research and industrial applications due to their unique physical properties of atomically thin thickness, strong light-matter interaction, unity valley polarization and enhanced many-body interactions. To fully explore their exotic physical properties and facilitate potential applications in electronics and optoelectronics, an effective and versatile characterization method is highly demanded. Among the many methods of characterization, optical second harmonic generation (SHG) has attracted broad attention because of its sensitivity, versatility and simplicity. The SHG technique is sufficiently sensitive at the atomic scale and therefore suitable for studies on 2D materials. More importantly, it has the capacity to acquire abundant information ranging from crystallographic, and electronic, to magnetic properties in various 2D materials due to its sensitivity to both spatial-inversion symmetry and time-reversal symmetry. These advantages accompanied by its characteristics of non-invasion and high throughput make SHG a powerful tool for 2D materials. This review summarizes recent experimental developments of SHG applications in 2D materials and also provides an outlook of potential prospects based on SHG.
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Affiliation(s)
- He Ma
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, China.
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Yao Y, Cheng Z, Dong J, Zhang X. Performance of integrated optical switches based on 2D materials and beyond. FRONTIERS OF OPTOELECTRONICS 2020; 13:129-138. [PMID: 36641553 PMCID: PMC9743869 DOI: 10.1007/s12200-020-1058-3] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 06/15/2020] [Indexed: 05/22/2023]
Abstract
Applications of optical switches, such as signal routing and data-intensive computing, are critical in optical interconnects and optical computing. Integrated optical switches enabled by two-dimensional (2D) materials and beyond, such as graphene and black phosphorus, have demonstrated many advantages in terms of speed and energy consumption compared to their conventional silicon-based counterparts. Here we review the state-of-the-art of optical switches enabled by 2D materials and beyond and organize them into several tables. The performance tables and future projections show the frontiers of optical switches fabricated from 2D materials and beyond, providing researchers with an overview of this field and enabling them to identify existing challenges and predict promising research directions.
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Affiliation(s)
- Yuhan Yao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhao Cheng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jianji Dong
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
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