Giant excitonic upconverted emission from two-dimensional semiconductor in doubly resonant plasmonic nanocavity

Deep-Subwavelength Conversion of Localized Excitons to Trions in 2D Semiconductor Heterostructures Observed by Cathodoluminescence Nanoscopy

Localized excitons in 2D semiconductors are pivotal for advancements in quantum information science. Despite their importance, conventional optical excitation methods, bounded by diffraction limits, inadequately investigate exciton states at the deep-subwavelength scale. In this work, we employ the cathodoluminescence (CL) technique, known as electron beam excitation with spatial resolution that far exceeds the diffraction limit of light, to uncover the localized excitons in h-BN/WS2/h-BN heterostructures, facilitating a deep-subwavelength conversion of two distinct excitonic states and amplifying the excitonic emission intensity by a factor of 11 within plasmonic hybrid configurations. These enhancements and precise excitations yield a detailed imaging of the transformation from localized excitons to trions at the nanometer scale. Based on density functional theory (DFT) and the finite-element method (FEM), we identify a funneling effect prompted by localized alterations in the valence and conduction bands of WS2 as the mechanism behind the exciton-state transformations. The findings address major challenges in near-field imaging and transformation of localized excitonic states, enhancing methodologies for probing excitonic behaviors in confined geometries. This advancement enables potential applications in the development of deep-subwavelength excitonic lasers, optoelectronic circuits, and next-generation quantum information technologies.

Twist angle dependent high degree of anisotropic emission and phonon scattering in WS2/NbOCl2 heterostructures

van der Waals (vdWs) heterostructures provide a superior platform to combine different low-dimensional materials together to tune their physical properties for different types of applications. Specifically, anisotropic heterostructures possess polarization-sensitive optical and electronic properties, which are highly needed in novel optoelectronic devices. However, the achieved degree of polarization (DOP) for the previously investigated heterostructure is relatively low and the induced polarization mechanism and key factors determining the DOP are still unclear. Here, we successfully fabricated an anisotropic TMDC/NbOCl2 heterostructure to break the rotation symmetry of WS2. Taking advantage of the strong anisotropy in NbOCl2, we achieved a high DOP of Raman scattering (0.813) and photoluminescence emission (0.801). Furthermore, we demonstrated that this anisotropy is also valid for bilayer WS2 with indirect exciton emissions. Twist angle is demonstrated to be an effective approach for further tuning the DOP. Density functional theory calculations reveal that increasing the coupling is twist angle dependent, leading to a twist angle-dependent DOP in the NbOCl2/TMDC heterostructure. Moreover, heterostructure formation also reduces intervalley scattering, leading to the observed valley polarization of WS2 at room temperature. Based on these findings, we proposed a conceptual framework to search for vdWs heterostructures with a high DOP. These findings are of critical importance in designing highly efficient anisotropic quantum emitters and optoelectronic devices using vdWs heterostructures.

Ultrafast Infrared Plasmonics

Ultrafast plasmonics represents a cutting-edge frontier in light-matter interactions, providing a unique platform to study electronic interactions and collective motions across femtosecond to picosecond timescales. In the infrared regime, where energy aligns with the rearrangements of low-energy electrons, molecular vibrations, and thermal fluctuations, ultrafast plasmonics can be a powerful tool for revealing ultrafast electronic phase transitions, controlling molecular reactions, and driving subwavelength thermal processes. Here, the evolution of ultrafast infrared plasmonics, discussing the recent progress in their manipulation, detection, and applications is reviewed. The future opportunities, including their potential to probe electronic correlations, investigate intrinsic ultrafast plasmonic interactions, and enable advanced applications in quantum information are highlighted, which may be promoted by multi-physical field integrated ultrafast techniques.

Sub-picosecond, strain-tunable, polarization-selective optical switching via anisotropic exciton dynamics in quasi-1D ZrSe3

In cutting-edge optical technologies, polarization is a key for encoding and transmitting vast information, highlighting the importance of selectively switching and modulating polarized light. Recently, anisotropic two-dimensional materials have emerged for ultrafast switching of polarization-multiplexed optical signals, but face challenges with low polarization ratios and limited spectral ranges. Here, we apply strain to quasi-one-dimensional layered ZrSe3 to enhance polarization selectivity and tune operational energies in ultrafast all-optical switching. Initially, transient absorption on unstrained ZrSe3 reveals a sub-picosecond switching response in polarization along a specific crystal axis, attributed to shifting-recovery dynamics of an anisotropic exciton. However, its polarization selectivity is weakened by a slow non-excitonic response in the perpendicular polarization. To overcome this limitation, we apply strain to ZrSe3 by bending its flexible substrate. The compressive strain spectrally decouples the excitonic and non-excitonic components, doubling the polarization selectivity of the sub-picosecond switching and tripling it compared to that in the tensile-strained ZrSe3. It also effectively tunes the switching energy at a shift rate of ~93 meV %-1. This strain-tunable switching is repeatable, reversible, and robustly maintains the sub-picosecond operation. First-principles calculations reveal that the strain control is enabled by momentum- and band-dependent modulations of the electronic band structure, causing opposite shifts in the excitonic and non-excitonic transitions. Our findings offer a novel approach for high-performance, wavelength-tunable, polarization-selective ultrafast optical switching.

Two-Dimensional Exciton Oriented Diffusion via Periodic Potentials

Excitonic devices operate based on excitons, which can be excited by photons as well as emitting photons and serve as a medium for photon-carrier conversion. Excitonic devices are expected to combine the advantages of both the high response rate of photonic devices and the high integration of electronic devices simultaneously. However, because of the neutral feature, exciton transport is generally achieved via diffusion rather than using electric fields, and the efficient control of exciton flux directionality has always been difficult. In this work, a precisely designed one-dimensional periodic nanostructure (1DPS) is used to introduce periodic strain field along with resonant mode to the WS2 monolayer, achieving exciton oriented diffusion with a 7.6-fold exciton diffusion coefficient enhancement relative to that of intrinsic, while enhancing the excitonic emission intensity by a factor of 10 and reducing exciton saturation threshold power by 2 orders of magnitude. Based on the analysis of the density functional theory (DFT) and the finite-element method (FEM), we attribute the anisotropy of exciton diffusion to exciton funneling induced by periodic potentials, which do not require excessive potential height difference for an efficient oriented diffusion. As a result of resonant emission, the exciton diffusion is dragged into the nonlinear regime owing to the high exciton density close to saturation, which improves the exciton diffusion coefficient and diffusion anisotropy more appreciably.

Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions

Plasmonic tunnel junctions are a unique electroluminescent system in which light emission occurs via an interplay between tunnelling electrons and plasmonic fields instead of electron-hole recombination as in conventional light-emitting diodes. It was previously shown that placing luminescent molecules in the tunneling pathway of nanoscopic tunnel junctions results in peculiar upconversion electroluminescence where the energy of emitted photons exceeds that of excitation electrons. Here we report the observation of upconversion electroluminescence in macroscopic van der Waals plasmonic tunnel junctions comprising gold and few-layer graphene electrodes separated by a ~2-nm-thick hexagonal boron nitride tunnel barrier and a monolayer semiconductor. We find that the semiconductor ground exciton emission is triggered at excitation electron energies lower than the semiconductor optical gap. Interestingly, this upconversion is reached in devices operating at a low conductance (<10-6 S) and low power density regime (<102 W cm-2), defying explanation through existing proposed mechanisms. By examining the scaling relationship between plasmonic and excitonic emission intensities, we elucidate the role of inelastic electron tunnelling dipoles that induce optically forbidden transitions in the few-layer graphene electrode and ultrafast hot carrier transfer across the van der Waals interface.

Brownian Motion Governs the Plasmonic Enhancement of Colloidal Upconverting Nanoparticles

Upconverting nanoparticles are essential in modern photonics due to their ability to convert infrared light to visible light. Despite their significance, they exhibit limited brightness, a key drawback that can be addressed by combining them with plasmonic nanoparticles. Plasmon-enhanced upconversion has been widely demonstrated in dry environments, where upconverting nanoparticles are immobilized, but constitutes a challenge in liquid media where Brownian motion competes against immobilization. This study employs optical tweezers for the three-dimensional manipulation of an individual upconverting nanoparticle, enabling the exploration of plasmon-enhanced upconversion luminescence in water. Contrary to expectation, experiments reveal a long-range (micrometer scale) and moderate (20%) enhancement in upconversion luminescence due to the plasmonic resonances of gold nanostructures. Comparison between experiments and numerical simulations evidences the key role of Brownian motion. It is demonstrated how the three-dimensional Brownian fluctuations of the upconverting nanoparticle lead to an "average effect" that explains the magnitude and spatial extension of luminescence enhancement.

Dual-color emissive OLED with orthogonal polarization modes

Linearly polarized organic light-emitting diodes have become appealing functional expansions of polarization optics and optoelectronic applications. However, the current linearly polarized diodes exhibit low polarization performance, cost-prohibitive process, and monochromatic modulation limit. Herein, we develop a switchable dual-color orthogonal linear polarization mode in organic light-emitting diode, based on a dielectric/metal nanograting-waveguide hybrid-microcavity using cost-efficient laser interference lithography and vacuum thermal evaporation. This acquired diode presents a transverse-electric/transverse-magnetic polarization extinction ratio of 15.8 dB with a divergence angle of ±30°, an external quantum efficiency of 2.25%, and orthogonal polarized colors from green to sky-blue. This rasterization of dielectric/metal-cathode further satisfies momentum matching between waveguide and air mode, diffracting both the targeted sky-blue transverse-electric mode and the off-confined green transverse-magnetic mode. Therefore, a polarization-encrypted colorful optical image is proposed, representing a significant step toward the low-cost high-performance linearly polarized light-emitting diodes and electrically-inspired polarization encryption for color images.

Photophysics and its application in photon upconversion

Photoluminescence (PL) upconversion is a phenomenon involving light-matter interaction, where the energy of the emitted photons is higher than that of the incident photons. PL upconversion has promising applications in optoelectronic devices, displays, photovoltaics, imaging, diagnosis and treatment. In this review, we summarize the mechanism of PL upconversion and ultrafast PL physical processes. In particular, we highlight the advances in laser cooling, biological imaging, volumetric displays and photonics.

Surface lattice resonances enhanced directional amplified spontaneous emission on plasmonic honeycomb nanocone array

Plasmonic arrays have emerged as a promising platform for investigating light-matter interactions enhanced by surface lattice resonance (SLR) at the nanoscale, which exhibit superior properties in localized field enhancement, narrow linewidth, and effective radiation loss suppression. In this study, an Al nanocone array in a honeycomb arrangement served as an optical cavity with a tip effect to realize the directional and polarized amplified spontaneous emission (ASE) of R6G. Based on the optical feedback between the degenerated SLR mode of high local density of states (LDOS) and the emission of gain media, 140-fold enhanced ASE was observed at an emission angle of 25° under TM polarization when the pump power density exceeded the threshold of 197.8 W cm-2. Moreover, polarization-resolved iso-frequency images indicated that a specific polarization dependence of ASE was modulated by the SLR mode. This study clarifies the interaction between the gain media and plasmonic system, which is beneficial for the generation of nanolasing with directional emission and lays a foundation for the plasmonic device.

Photoluminescence upconversion in monolayer WSe2 activated by plasmonic cavities through resonant excitation of dark excitons

Anti-Stokes photoluminescence (PL) is light emission at a higher photon energy than the excitation, with applications in optical cooling, bioimaging, lasing, and quantum optics. Here, we show how plasmonic nano-cavities activate anti-Stokes PL in WSe2 monolayers through resonant excitation of a dark exciton at room temperature. The optical near-fields of the plasmonic cavities excite the out-of-plane transition dipole of the dark exciton, leading to light emission from the bright exciton at higher energy. Through statistical measurements on hundreds of plasmonic cavities, we show that coupling to the dark exciton leads to a near hundred-fold enhancement of the upconverted PL intensity. This is further corroborated by experiments in which the laser excitation wavelength is tuned across the dark exciton. We show that a precise nanoparticle geometry is key for a consistent enhancement, with decahedral nanoparticle shapes providing an efficient PL upconversion. Finally, we demonstrate a selective and reversible switching of the upconverted PL via electrochemical gating. Our work introduces the dark exciton as an excitation channel for anti-Stokes PL in WSe2 and paves the way for large-area substrates providing nanoscale optical cooling, anti-Stokes lasing, and radiative engineering of excitons.

Giant Out-of-Plane Exciton Emission Enhancement in Two-Dimensional Indium Selenide via a Plasmonic Nanocavity

Out-of-plane (OP) exciton-based emitters in two-dimensional semiconductor materials are attractive candidates for novel photonic applications, such as radially polarized sources, integrated photonic chips, and quantum communications. However, their low quantum efficiency resulting from forbidden transitions limits their practicality. In this work, we achieve a giant enhancement of up to 34000 for OP exciton emission in indium selenide (InSe) via a designed Ag nanocube-over-Au film plasmonic nanocavity. The large photoluminescence enhancement factor (PLEF) is attributed to the induced OP local electric field (E_z) within the nanocavity, which facilitates effective OP exciton-plasmon interaction and subsequent tremendous enhancement. Moreover, the nanoantenna effect resulting from the effective interaction improves the directivity of spontaneous radiation. Our results not only reveal an effective photoluminescence enhancement approach for OP excitons but also present an avenue for designing on-chip photonic devices with an OP dipole orientation.

Phonon-assisted upconversion in twisted two-dimensional semiconductors

Phonon-assisted photon upconversion (UPC) is an anti-Stokes process in which incident photons achieve higher energy emission by absorbing phonons. This letter studies phonon-assisted UPC in twisted 2D semiconductors, in which an inverted contrast between UPC and conventional photoluminescence (PL) of WSe2 twisted bilayer is emergent. A 4-fold UPC enhancement is achieved in 5.5° twisted bilayer while PL weakens by half. Reduced interlayer exciton conversion efficiency driven by lattice relaxation, along with enhanced pump efficiency resulting from spectral redshift, lead to the rotation-angle-dependent UPC enhancement. The counterintuitive phenomenon provides a novel insight into a unique way that twisted angle affects UPC and light-matter interactions in 2D semiconductors. Furthermore, the UPC enhancement platform with various superimposable means offers an effective method for lighting bilayers and expanding the application prospect of 2D stacked van der Waals devices.