1
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Xu YJ, Cao G, Li QY, Xue CL, Zhao WM, Wang QW, Dou LG, Du X, Meng YX, Wang YK, Gao YH, Jia ZY, Li W, Ji L, Li FS, Zhang Z, Cui P, Xing D, Li SC. Realization of monolayer ZrTe 5 topological insulators with wide band gaps. Nat Commun 2024; 15:4784. [PMID: 38839772 PMCID: PMC11153644 DOI: 10.1038/s41467-024-49197-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 05/28/2024] [Indexed: 06/07/2024] Open
Abstract
Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin-orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.
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Affiliation(s)
- Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Guohua Cao
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China
| | - Qi-Yuan Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Wei-Min Zhao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Qi-Wei Wang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Li-Guo Dou
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Xuan Du
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Yu-Xin Meng
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Yuan-Kun Wang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Yu-Hang Gao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Wei Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Lianlian Ji
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Fang-Sen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, Hefei, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, Hefei, China.
| | - Dingyu Xing
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.
- Hefei National Laboratory, Hefei, China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing, China.
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2
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Xing D, Tong B, Pan S, Wang Z, Luo J, Zhang J, Zhang CL. Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe 5. Nat Commun 2024; 15:4407. [PMID: 38782885 PMCID: PMC11116540 DOI: 10.1038/s41467-024-48761-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 05/14/2024] [Indexed: 05/25/2024] Open
Abstract
Topological flat bands - where the kinetic energy of electrons is quenched - provide a platform for investigating the topological properties of correlated systems. Here, we report the observation of a topological flat band formed by polar-distortion-assisted Rashba splitting in the three-dimensional Dirac material ZrTe5. The polar distortion and resulting Rashba splitting on the band are directly detected by torque magnetometry and the anomalous Hall effect, respectively. The local symmetry breaking further flattens the band, on which we observe resistance oscillations beyond the quantum limit. These oscillations follow the temperature dependence of the Lifshitz-Kosevich formula but are evenly distributed in B instead of 1/B at high magnetic fields. Furthermore, the cyclotron mass gets anomalously enhanced about 102 times at fields ~ 20 T. Our results provide an intrinsic platform without invoking moiré or order-stacking engineering, which opens the door for studying topologically correlated phenomena beyond two dimensions.
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Affiliation(s)
- Dong Xing
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bingbing Tong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Senyang Pan
- High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Zezhi Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianlin Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinglei Zhang
- High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Cheng-Long Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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3
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Liu J, Zhou Y, Yepez Rodriguez S, Delmont MA, Welser RA, Ho T, Sirica N, McClure K, Vilmercati P, Ziller JW, Mannella N, Sanchez-Yamagishi JD, Pettes MT, Wu R, Jauregui LA. Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe 5. Nat Commun 2024; 15:332. [PMID: 38184667 PMCID: PMC10771548 DOI: 10.1038/s41467-023-44547-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 12/19/2023] [Indexed: 01/08/2024] Open
Abstract
The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.
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Affiliation(s)
- Jinyu Liu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | | | - Matthew A Delmont
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Robert A Welser
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Triet Ho
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, CA, 92697, USA
| | - Nicholas Sirica
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Kaleb McClure
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Paolo Vilmercati
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | - Joseph W Ziller
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Norman Mannella
- Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN, 37996, USA
| | | | - Michael T Pettes
- Center for Integrated Nanotechnologies (CINT), Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Luis A Jauregui
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
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4
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Nandi S, Cohen SZ, Singh D, Poplinger M, Nanikashvili P, Naveh D, Lewi T. Unveiling Local Optical Properties Using Nanoimaging Phase Mapping in High-Index Topological Insulator Bi 2Se 3 Resonant Nanostructures. NANO LETTERS 2023; 23:11501-11509. [PMID: 37890054 DOI: 10.1021/acs.nanolett.3c03128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2023]
Abstract
Topological insulators are materials characterized by an insulating bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic properties have been extensively studied, their mid-infrared (MIR) properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy to study chemical vapor deposition-grown Bi2Se3 nanobeams (NBs). We extract the MIR optical constants of Bi2Se3, revealing refractive index values as high as n ∼ 6.4, and demonstrate that the NBs support Mie resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with finite-difference time-domain simulations. This work highlights the potential of Bi2Se3 for quantum circuitry, nonlinear generation, high-Q metaphotonics, and photodetection.
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Affiliation(s)
- Sukanta Nandi
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Shany Z Cohen
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Danveer Singh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Michal Poplinger
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Pilkhaz Nanikashvili
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Tomer Lewi
- Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
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5
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Zhong J, Yang M, Shi Z, Li Y, Mu D, Liu Y, Cheng N, Zhao W, Hao W, Wang J, Yang L, Zhuang J, Du Y. Towards layer-selective quantum spin hall channels in weak topological insulator Bi 4Br 2I 2. Nat Commun 2023; 14:4964. [PMID: 37587124 PMCID: PMC10432521 DOI: 10.1038/s41467-023-40735-7] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Accepted: 08/01/2023] [Indexed: 08/18/2023] Open
Abstract
Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically non-trivial edge channels. However, the currently available weak topological insulators are stacks of the same quantum spin Hall layer with translational symmetry in the out-of-plane direction-leading to the absence of the channel degree of freedom for edge states. Here, we study a candidate weak topological insulator, Bi4Br2I2, which is alternately stacked by three different quantum spin Hall insulators, each with tunable topologically non-trivial edge states. Our angle-resolved photoemission spectroscopy and first-principles calculations show that an energy gap opens at the crossing points of different Dirac cones correlated with different layers due to the interlayer interaction. This is essential to achieve the tunability of topological edge states as controlled by varying the chemical potential. Our work offers a perspective for the construction of tunable quantized conductance devices for future spintronic applications.
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Affiliation(s)
- Jingyuan Zhong
- School of Physics, Beihang University, Haidian District, Beijing, China
| | - Ming Yang
- School of Physics, Beihang University, Haidian District, Beijing, China
| | - Zhijian Shi
- School of Physics, Beihang University, Haidian District, Beijing, China
| | - Yaqi Li
- School of Physics, Beihang University, Haidian District, Beijing, China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan, China
| | - Ningyan Cheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, China
| | - Wenxuan Zhao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China
| | - Weichang Hao
- School of Physics, Beihang University, Haidian District, Beijing, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Haidian District, Beijing, China.
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China.
| | - Jincheng Zhuang
- School of Physics, Beihang University, Haidian District, Beijing, China.
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, China.
| | - Yi Du
- School of Physics, Beihang University, Haidian District, Beijing, China.
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, China.
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6
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Ma N, Qiang XB, Xie Z, Zhang Y, Yan S, Cao S, Wang P, Zhang L, Gu GD, Li Q, Xie XC, Lu HZ, Wei X, Chen JH. Perpendicular in-plane negative magnetoresistance in ZrTe 5. Sci Bull (Beijing) 2023:S2095-9273(23)00393-6. [PMID: 37402602 DOI: 10.1016/j.scib.2023.06.018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 05/22/2023] [Accepted: 06/15/2023] [Indexed: 07/06/2023]
Affiliation(s)
- Ning Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China; Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China
| | - Xiao-Bin Qiang
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhijian Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yu Zhang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Shili Yan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Shimin Cao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China; Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Peipei Wang
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liyuan Zhang
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - G D Gu
- Condensed Matter Physics & Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973-5000, USA
| | - Qiang Li
- Condensed Matter Physics & Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973-5000, USA; Department of Physics and Astronomy, Stony Brook, University, Stony Brook, NY 11794-3800, USA
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Hefei National Laboratory, Hefei 230088, China
| | - Hai-Zhou Lu
- Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Xinjian Wei
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China; Beijing Academy of Quantum Information Sciences, Beijing 100193, China.
| | - Jian-Hao Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China; Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China; Beijing Academy of Quantum Information Sciences, Beijing 100193, China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China.
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7
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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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8
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Liu Y, Pi H, Watanabe K, Taniguchi T, Gu G, Li Q, Weng H, Wu Q, Li Y, Xu Y. Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices. NANO LETTERS 2023. [PMID: 37205726 DOI: 10.1021/acs.nanolett.3c01528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron-hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Our work helps to resolve the longstanding puzzles on ZrTe5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.
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Affiliation(s)
- Yonghe Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hanqi Pi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States
| | - Qiang Li
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, United States
| | - Hongming Weng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Quansheng Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yongqing Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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9
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Xu L, Li Y, Fang Y, Zheng H, Shi W, Chen C, Pei D, Lu D, Hashimoto M, Wang M, Yang L, Feng X, Zhang H, Huang F, Xue Q, He K, Liu Z, Chen Y. Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300227. [PMID: 36870326 DOI: 10.1002/adma.202300227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Revised: 02/22/2023] [Indexed: 05/26/2023]
Abstract
The evolution of the physical properties of 2D material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal 2D building blocks of various 3D topological phases. However, the stacking geometry has been previously limited to the bulk 1T'-WTe2 type. Here, the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers are introduced as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, a topology hierarchy is revealed: 2M-WSe2 , MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M-WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. It is proposed that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with 2D materials.
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Affiliation(s)
- Lixuan Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Yiwei Li
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, P. R. China
| | - Yuqiang Fang
- State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Huijun Zheng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Wujun Shi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- Center for Transformative Science, ShanghaiTech University, Shanghai, 201210, P. R. China
- Shanghai high repetition rate XFEL and extreme light facility (SHINE), ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Cheng Chen
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ding Pei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Meixiao Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Xiao Feng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, 210093, P. R. China
| | - Fuqiang Huang
- State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qikun Xue
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Ke He
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
- Clarendon LaboratoryDepartment of Physics, University of Oxford, Oxford, OX1 3PU, UK
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10
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Jiang Y, Zhu P, Zhao J, Li S, Wu Y, Xiong X, Zhang X, Liu Y, Bai J, Wang Z, Xu S, Wang M, Song T, Wang Z, Wang W, Han J. Sensitive biosensors based on topological insulator Bi 2Se 3 and peptide. Anal Chim Acta 2023; 1239:340655. [PMID: 36628700 DOI: 10.1016/j.aca.2022.340655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Revised: 11/20/2022] [Accepted: 11/21/2022] [Indexed: 11/23/2022]
Abstract
In this work, we designed a facile and label-free electrochemical biosensor based on intrinsic topological insulator (TI) Bi2Se3 and peptide for the detection of immune checkpoint molecules. With topological protection, Bi2Se3 could have robust surface states with low electronic noise, which was beneficial for the stable and sensitive electron transport between electrode and electrolyte interface. The peptides are easily synthesized and chemically modified, and have good biocompatibility and bioavailability, which is a suitable candidate as the recognition units for immune checkpoint molecules. Therefore, the peptide/Bi2Se3 was developed as a suitable working electrode for the electrochemical biosensor. The basic performance of the designed peptide/Bi2Se3 biosensor was investigated to determine the Anti-HA Tag Antibody and PD-L1 molecules. The linear detection range was from 3.6 × 10-10 mg mL-1 to 3.6 × 10-5 mg mL-1, and the detection limit was 1.07 × 10-11 mg mL-1. Moreover, the biosensor also displayed good selectivity and stability.
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Affiliation(s)
- Yujiu Jiang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jinge Zhao
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electro-photonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Shanshan Li
- Department of Rheumatology, China-Japan Friendship Hospital, Beijing, 100029, China
| | - Yetong Wu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yuxiang Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiangyue Bai
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zihang Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shiqi Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Minxuan Wang
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electro-photonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tinglu Song
- Experimental Centre of Advanced Materials School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
| | - Weizhi Wang
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electro-photonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
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11
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Yang H, Song L, Cao Y, Yan P. Experimental Realization of Two-Dimensional Weak Topological Insulators. NANO LETTERS 2022; 22:3125-3132. [PMID: 35353537 DOI: 10.1021/acs.nanolett.2c00555] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report the experimental realization of a two-dimensional (2D) weak topological insulator (WTI) in spinless Su-Schrieffer-Heeger circuits with parity-time and chiral symmetries. Strong and weak Z2 topological indexes are adopted to explain the experimental findings that a Dirac semimetal (DSM) phase and four WTI phases emerge in turn when we modulate the centrosymmetric circuit deformations. In the DSM phase, it is found that the Dirac cone is highly anisotropic and that it is not pinned to any high-symmetry points but can widely move within the Brillouin zone, which eventually leads to the phase transition between WTIs. In addition, we observe a pair of flat-band domain wall states by designing spatially inhomogeneous node connections. Our work provides the first experimental evidence for 2D WTIs, which significantly advances our understanding of the strong and weak nature of topological insulators, the robustness of flat bands, and the itinerant and anisotropic features of Dirac cones.
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Affiliation(s)
- Huanhuan Yang
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lingling Song
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yunshan Cao
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Peng Yan
- School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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12
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Jiang Y, Li S, Zhu P, Zhao J, Xiong X, Wu Y, Zhang X, Li Y, Song T, Xiao W, Wang Z, Han J. Electrochemical DNA Biosensors Based on the Intrinsic Topological Insulator BiSbTeSe 2 for Potential Application in HIV Determination. ACS APPLIED BIO MATERIALS 2022; 5:1084-1091. [PMID: 35157417 DOI: 10.1021/acsabm.1c01153] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
In this work, we reported a sensitive, label-free electrochemical biosensor based on the intrinsic topological insulator (TI) BiSbTeSe2 for potential application in the determination of the HIV gene. With strong spin-obit coupling, TIs could have robust surface states with low electronic noise, which might be beneficial for the stable and sensitive electron transport between the electrode and electrolyte interface. Under optimized conditions of the biosensors using BiSbTeSe2, the differential pulse voltammetry (DPV) peak currents showed a linear relationship with the logarithm of target DNA concentrations ranging from 1.0 × 10-13 to 1.0 × 10-7 M, with a detection limit of 1.07 × 10-15 M. The sensing assay also displayed good selectivity and stability after storage at 4 °C for 7 days. This work provides an effective way to develop biosensors with topological materials, which have a potential application in the clinical determination and monitoring field.
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Affiliation(s)
- Yujiu Jiang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Shanshan Li
- Department of Rheumatology, China-Japan Friendship Hospital, 100029 Beijing, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jinge Zhao
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yetong Wu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Tinglu Song
- Experimental Centre of Advanced Materials School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Wende Xiao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
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13
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Kim JM, Haque MF, Hsieh EY, Nahid SM, Zarin I, Jeong KY, So JP, Park HG, Nam S. Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2107362. [PMID: 34866241 DOI: 10.1002/adma.202107362] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 11/11/2021] [Indexed: 06/13/2023]
Abstract
Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.
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Affiliation(s)
- Jin Myung Kim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Md Farhadul Haque
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ezekiel Y Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Shahriar Muhammad Nahid
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Ishrat Zarin
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- Department of Physics, Jeju National University, Jeju, 63243, Republic of Korea
| | - Jae-Pil So
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science, Seoul, 02841, Republic of Korea
| | - SungWoo Nam
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, 92697, USA
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14
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Zhuang J, Li J, Liu Y, Mu D, Yang M, Liu Y, Zhou W, Hao W, Zhong J, Du Y. Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States. ACS NANO 2021; 15:14850-14857. [PMID: 34583466 DOI: 10.1021/acsnano.1c04928] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Quantum spin Hall insulators (QSHIs) have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, obtaining the clean and atomically sharp ES which serves as ideal 1D spin-polarized nondissipative conducting channels is demanding and still a challenge. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observation of the topological ES at the step edges by the scanning tunneling microscopy (STM) and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits noteworthy robustness against nontime reversal symmetry (non-TRS) perturbations. The theoretical simulations verify the topological nontriviality of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, benefiting to engineer the topological features by using the 1D nanoribbons as building blocks.
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Affiliation(s)
- Jincheng Zhuang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Jin Li
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Ming Yang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Yani Liu
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Wei Zhou
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China
| | - Weichang Hao
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Jianxin Zhong
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yi Du
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
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15
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Lin C, Ochi M, Noguchi R, Kuroda K, Sakoda M, Nomura A, Tsubota M, Zhang P, Bareille C, Kurokawa K, Arai Y, Kawaguchi K, Tanaka H, Yaji K, Harasawa A, Hashimoto M, Lu D, Shin S, Arita R, Tanda S, Kondo T. Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe 3. NATURE MATERIALS 2021; 20:1093-1099. [PMID: 34017119 DOI: 10.1038/s41563-021-01004-4] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2020] [Accepted: 04/01/2021] [Indexed: 06/12/2023]
Abstract
Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires preparation of materials with various compositions. Thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy and spin- and angle-resolved photoemission spectroscopy to visualize the strain-driven band-structure evolution of the quasi-one-dimensional superconductor TaSe3. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-one-dimensional topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-one-dimensional superconductor TaSe3 provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for a spin current that is robust against impurity scattering.
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Affiliation(s)
- Chun Lin
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Masayuki Ochi
- Department of Physics, Osaka University, Toyonaka, Japan
| | - Ryo Noguchi
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Kenta Kuroda
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Masahito Sakoda
- Department of Applied Physics, Hokkaido University, Kita-ku, Japan
| | - Atsushi Nomura
- Department of Physics, Tokyo University of Science, Tokyo, Japan
| | | | - Peng Zhang
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Cedric Bareille
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Kifu Kurokawa
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Yosuke Arai
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Kaishu Kawaguchi
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Hiroaki Tanaka
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Koichiro Yaji
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
- Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Ibaraki, Japan
| | - Ayumi Harasawa
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
| | - Shik Shin
- Office of University Professor, University of Tokyo, Kashiwa, Japan
| | - Ryotaro Arita
- RIKEN Center for Emergent Matter Science, Wako, Japan
- Department of Applied Physics, University of Tokyo, Tokyo, Japan
| | - Satoshi Tanda
- Department of Applied Physics, Hokkaido University, Kita-ku, Japan
- Center of Education and Research for Topological Science and Technology, Hokkaido University, Kita-ku, Japan
| | - Takeshi Kondo
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan.
- Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan.
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16
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Wang C. Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe_{5} and HfTe_{5}. PHYSICAL REVIEW LETTERS 2021; 126:126601. [PMID: 33834821 DOI: 10.1103/physrevlett.126.126601] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2020] [Accepted: 03/02/2021] [Indexed: 06/12/2023]
Abstract
A 40-year-old puzzle in transition metal pentatellurides ZrTe_{5} and HfTe_{5} is the anomalous peak in the temperature dependence of the longitudinal resistivity, which is accompanied by sign reverses of the Hall and Seebeck coefficients. We give a plausible explanation for these phenomena without assuming any phase transition or strong interaction effect. We show that, due to intrinsic thermodynamics and diluteness of the conducting electrons in these materials, the chemical potential displays a strong dependence on the temperature and magnetic field. With that, we compute resistivity, Hall and Seebeck coefficients in zero field, and magnetoresistivity and Hall resistivity in finite magnetic fields, in all of which we reproduce the main features that are observed in experiments.
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Affiliation(s)
- Chenjie Wang
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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