Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Versatile spaceborne photonics with chalcogenide phase-change materials

Recent growth in space systems has seen increasing capabilities packed into smaller and lighter Earth observation and deep space mission spacecraft. Phase-change materials (PCMs) are nonvolatile, reconfigurable, fast-switching, and have recently shown a high degree of space radiation tolerance, thereby making them an attractive materials platform for spaceborne photonics applications. They promise robust, lightweight, and energy-efficient reconfigurable optical systems whose functions can be dynamically defined on-demand and on-orbit to deliver enhanced science or mission support in harsh environments on lean power budgets. This comment aims to discuss the recent advances in rapidly growing PCM research and its potential to transition from conventional terrestrial optoelectronics materials platforms to versatile spaceborne photonic materials platforms for current and next-generation space and science missions. Materials International Space Station Experiment-14 (MISSE-14) mission-flown PCMs outside of the International Space Station (ISS) and key results and NASA examples are highlighted to provide strong evidence of the applicability of spaceborne photonics.

Microstructure characterization, phase transition, and device application of phase-change memory materials

Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.

Toward Accurate Thermal Modeling of Phase Change Material-Based Photonic Devices

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide-based phase-change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid-state structural phases. Although significant efforts have been devoted to accurate simulation of PCM-based devices, in this paper, three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices are highlighted: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid-phase PCMs. The important topic of switching energy scaling in PCM devices, which also helps explain why the three above-mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics, is further investigated. These findings offer insight to facilitate accurate modeling of PCM-based photonic devices and can inform the development of more efficient reconfigurable optics.

Wavelength-tunable infrared chiral metasurfaces with phase-change materials

Optical phase-change materials exhibit tunable permittivity and switching properties during phase transition, which offers the possibility of dynamic control of optical devices. Here, a wavelength-tunable infrared chiral metasurface integrated with phase-change material GST-225 is demonstrated with the designed unit cell of parallelogram-shaped resonator. By varying the baking time at a temperature above the phase transition temperature of GST-225, the resonance wavelength of the chiral metasurface is tuned in the wavelength range of 2.33 µm to 2.58 µm, while the circular dichroism in absorption is maintained around 0.44. The chiroptical response of the designed metasurface is revealed by analyzing the electromagnetic field and displacement current distributions under left- and right-handed circularly polarized (LCP and RCP) light illumination. Moreover, the photothermal effect is simulated to investigate the large temperature difference in the chiral metasurface under LCP and RCP illumination, which allows for the possibility of circular polarization-controlled phase transition. The presented chiral metasurfaces with phase-change materials offer the potential to facilitate promising applications in the infrared regime, such as chiral thermal switching, infrared imaging, and tunable chiral photonics.

Using Machine Learning Potentials to Explore Interdiffusion at Metal-Chalcogenide Interfaces

Chalcogenide alloys are key materials for selector and memory elements used in next-generation nonvolatile memory cells. However, the high electric fields and Joule heating experienced during operation can promote interdiffusion at the interfaces that degrade device performance over time. A clear atomic scale understanding of how chalcogenide alloys interact with electrodes could aid in identifying ways to improve long-term device endurance. In this work, we develop a robust set of moment tensor potentials (MTPs) to examine interactions between Ge-Se alloys and Ti electrodes. Previous works have shown evidence of strong interactions between Ti and chalcogenide alloys. This system offers an important first test in the use of ML empirical potentials to understand the role of interfaces in endurance in memory elements and broader nanoscale devices. The empirical potentials are constructed using an active learning moment tensor potential framework that leverages a broad data set of first-principles calculations for Ti, Ge, and Se compounds. Long-term simulations (>1 ns) show significant interdiffusion at the Ti|Ge-Se interface with Ti and Se both actively moving across the original interface. The strong chemical affinity of Ti and Se leads to a well-defined Ti-Se region and a severely Se-depleted central Ge-Se region with unfavorable selector characteristics. The evolution of the Ti-Se layer can be described using a self-limited growth model. By comparing effective Ti-Se diffusion constants for simulations at different temperatures, we find a low activation energy of 0.1 eV for Ti-Se layer interdiffusion.

Phonon Symphony of Stacked Multilayers and Weak Bonds Lowers Lattice Thermal Conductivity

Controlling lattice vibrations to obtain intrinsic low thermal conductivity play a critical role in thermal management of electronic and photonic devices, energy converters, and thermal insulation, which necessitates exploring new compounds and a thorough understanding of their chemical structure, bonding, and lattice dynamics. Herein, a new chalcogenide, Ga₆ Cr₅ Se₁₆ , shows intrinsic low lattice thermal conductivity κ_lat , which crystallizes in the monoclinic phase (C2/m) with the stacked inverse GaSe₄ layers (g'), close-packed Cr³⁺ Se₆ layers (c), GaSe₄ layers (g) and loosely-stacked Cr²⁺ Se₆ layers (c') along the c-axis. In this structure, a wide variety of chemical bonding is arranged in each layer, such as covalent Ga-Se, covalent Cr³⁺ -Se, and weaker Cr²⁺ -Se bonding, which endow it with a large phonon symphony by strong coupling of soft acoustic and low-lying optical phonons. As a result, Ga₆ Cr₅ Se₁₆ realizes an intrinsic low κ_lat of 0.79 W m^{- 1}  K^{- 1} at 323 K, which is almost four times, or twice lower than that of Cr₃ Se₄ (2.95 W m^{- 1}  K^{- 1} ), or Cr₂ Se₃ (1.56 W m^{- 1}  K^{- 1} ), Ga₂ Se₃ (1.36 W m^{- 1} K^{- 1} ) at 323 K, respectively. These insights will offer comprehensive understanding of the phonon propagation in complex layered chalcogenides, and also shed useful light on future design of low-κ_lat solids.

High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing

Ferroelectric tunnel junction (FTJ) is one promising candidate for next-generation nonvolatile data storage and neural network computing systems. In this work, the high-performance 50 nm-diameter Au/Ti/PbZr_0.52Ti_0.48O₃ (∼3 nm, (111)-oriented)/Nb:SrTiO₃ (Nb: 0.7 wt %) FTJs are achieved to demonstrate the scaling down capability of FTJ. As a nonvolatile memory, the FTJ shows eight distinct resistance states (3 bits) with a large ON/OFF ratio (>10³), and these states can be switched at a fast speed of 10 ns. Intriguingly, the long-term potentiation/depression and spike timing-dependent plasticity, that is, fundamental functions of biological synapses, can be emulated in the nanoscale FTJ-based artificial synapse. A convolutional neural network (CNN) simulation is then carried out based on the experimental results, and a high recognition accuracy of ∼93.8% on fashion product images is obtained, which is very close to the result of ∼94.4% by a floating-point-based CNN software. In particular, the FTJ-based CNN simulation also exhibits robustness to input image noises. These results indicate the great potential of FTJ for high-density information storage and neural network computing.

Passive Ultra-Conductive Thermal Metamaterials

Ultra-conductive heat transport showcases significant potentials in popular thermal managements with convection, phase change, and heat source. However, it is captivated impossible for passive thermal manipulation, usually bounded by intrinsic thermal conductivities of natural materials, to outperform these active recipes in need of extra energy payload. Here, a robust recipe to create passive ultra-conductive thermal metamaterials consisting of nothing but bulk natural materials is reported. Thanks to the local thermal resistance regulation by vertical thermal transport channel, the proof-of-concept thermal metamaterials experimentally demonstrate extreme effective conductivity (1915 W m^-1  K^-1 ) solely with naturally occurring materials. The purely conductive modulation without any external energy is comparable to active counterparts, and further reveals its robustness and unexpected convenience. The findings construct a high-efficient paradigm of passive thermal management with ultra-conductive heat transport, and further hint potentials in other Laplace fields, e.g., DC and magnetostatics.

Nonequilibrium Green's function method for phonon heat transport in quantum system

Phonon heat transport property in quantum devices is of great interesting since it presents significant quantum behaviors. In the past few decades, great efforts have been devoted to establish the theoretical method for phonon heat transport simulation in nanostructures. However, modeling phonon heat transport from wavelike coherent regime to particlelike incoherent regime remains a challenging task. The widely adopted theoretical approach, such as molecular dynamics, semiclassical Boltzmann transport equation, captures quantum mechanical effects within different degrees of approximation. Among them, Non-equilibrium Green's function (NEGF) method has attracted wide attention, as its ability to perform full quantum simulation including many-body interactions. In this review, we summarized recent theoretical advances of phonon NEGF method and the applications on the numerical simulation for phonon heat transport in nanostructures. At last, the challenges of numerical simulation are discussed.

Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)

Materials with tunable thermal properties enable on-demand control of temperature and heat flow, which is an integral component in the development of solid-state refrigeration, energy scavenging, and thermal circuits. Although gap-based and liquid-based thermal switches that work on the basis of mechanical movements have been an effective approach to control the flow of heat in the devices, their complex mechanisms impose considerable costs in latency, expense, and power consumption. As a consequence, materials that have multiple solid-state phases with distinct thermal properties are appealing for thermal management due to their simplicity, fast switching, and compactness. Thus, an ideal thermal switch should operate near or above room temperature, have a simple trigger mechanism, and offer a quick and large on/off switching ratio. In this study, we experimentally demonstrate that manipulating phonon scattering rates can switch the thermal conductivity of antiferroelectric PbZrO₃ bidirectionally by −10% and +25% upon applying electrical and thermal excitation, respectively. Our approach takes advantage of two separate phase transformations in PbZrO₃ that alter the phonon scattering rate in different manners. In this study, we demonstrate that PbZrO₃ can serve as a fast (<1 second), repeatable, simple trigger, and reliable thermal switch with a net switching ratio of nearly 38% from ~1.20 to ~1.65 W m⁻¹ K⁻¹.

Materials with tunable thermal properties enable on-demand control of temperature and heat flow. Here, the authors demonstrate how thermal conductivity of an antiferroelectric solid can be bi-directionally switched to 10% lower and 25% higher values without any moving components.

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Phase change materials exhibit unique advantages in reconfigurable photonic devices due to drastic tunability of photoelectric properties. Here, we systematically investigate the thermal equilibrium process and the ultrafast dynamics of Ge₂Sb₂Te₅ (GST) driven by femtosecond (fs) pulses, using time-resolved terahertz spectroscopy. Both fs-pulse-driven crystallization and amorphization are demonstrated, and the threshold of photoinduced crystallization (amorphization) is determined to be 8.4 mJ/cm² (10.1 mJ/cm²). The ultrafast carrier dynamics reveal that the cumulative photothermal effect plays a crucial role in the ultrafast crystallization, and modulation depth of volatile (nonvolatile) THz has switching limits up to 30% (15%). A distinctive phonon absorption at 1.1 THz is observed, providing fingerprint spectrum evidence of crystalline lattice formation driven by intense fs pulses. Finally, multistate volatile (nonvolatile) THz switching is implemented by tuning optical pump fluence. These results provide insight into the photoinduced phase change of GST and offer benefits for all optical THz functional devices.

Suppressed electronic contribution in thermal conductivity of Ge2Sb2Se4Te

Integrated nanophotonics is an emerging research direction that has attracted great interests for technologies ranging from classical to quantum computing. One of the key-components in the development of nanophotonic circuits is the phase-change unit that undergoes a solid-state phase transformation upon thermal excitation. The quaternary alloy, Ge2Sb2Se4Te, is one of the most promising material candidates for application in photonic circuits due to its broadband transparency and large optical contrast in the infrared spectrum. Here, we investigate the thermal properties of Ge2Sb2Se4Te and show that upon substituting tellurium with selenium, the thermal transport transitions from an electron dominated to a phonon dominated regime. By implementing an ultrafast mid-infrared pump-probe spectroscopy technique that allows for direct monitoring of electronic and vibrational energy carrier lifetimes in these materials, we find that this reduction in thermal conductivity is a result of a drastic change in electronic lifetimes of Ge2Sb2Se4Te, leading to a transition from an electron-dominated to a phonon-dominated thermal transport mechanism upon selenium substitution. In addition to thermal conductivity measurements, we provide an extensive study on the thermophysical properties of Ge2Sb2Se4Te thin films such as thermal boundary conductance, specific heat, and sound speed from room temperature to 400 °C across varying thicknesses.

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge₂Sb₂Te₅ (GST); however, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such an SL. Here we explore the electrical and thermal transport of SLs with deposited Sb₂Te₃ and GeTe alternating layers of various thicknesses. We find up to an approximately four-fold reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared with polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (∼2000×) between the in-plane and cross-plane directions due to the weakly interacting van der Waals-like gaps. This work uncovers electrothermal transport in SLs based on Sb₂Te₃ and GeTe for the improved design of low-power PCM.

Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance

Measuring the thermal conductivity of sub-surface buried substrates is of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths. Here, we experimentally and numerically investigate the TPD of the recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD (i.e., the depth at which temperature drops to 1/e value of the maximum surface temperature) does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates that are traditionally challenging by transient pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries.

Tuning network topology and vibrational mode localization to achieve ultralow thermal conductivity in amorphous chalcogenides

Amorphous chalcogenide alloys are key materials for data storage and energy scavenging applications due to their large non-linearities in optical and electrical properties as well as low vibrational thermal conductivities. Here, we report on a mechanism to suppress the thermal transport in a representative amorphous chalcogenide system, silicon telluride (SiTe), by nearly an order of magnitude via systematically tailoring the cross-linking network among the atoms. As such, we experimentally demonstrate that in fully dense amorphous SiTe the thermal conductivity can be reduced to as low as 0.10 ± 0.01 W m-1 K-1 for high tellurium content with a density nearly twice that of amorphous silicon. Using ab-initio simulations integrated with lattice dynamics, we attribute the ultralow thermal conductivity of SiTe to the suppressed contribution of extended modes of vibration, namely propagons and diffusons. This leads to a large shift in the mobility edge - a factor of five - towards lower frequency and localization of nearly 42% of the modes. This localization is the result of reductions in coordination number and a transition from over-constrained to under-constrained atomic network.