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Aryana K, Popescu CC, Sun H, Aryana K, Kim HJ, Julian M, Islam MR, Ríos Ocampo CA, Gu T, Hu J, Hopkins PE. Thermal Transport in Chalcogenide-Based Phase Change Materials: A Journey from Fundamental Physics to Device Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2414031. [PMID: 39924804 DOI: 10.1002/adma.202414031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2024] [Revised: 12/05/2024] [Indexed: 02/11/2025]
Abstract
Advancements in nanofabrication processes have propelled nonvolatile phase change materials (PCMs) beyond storage-class applications. They are now making headway in fields such as photonic integrated circuits (PIC), free-space optics, and plasmonics. This shift is owed to their distinct electrical, optical, and thermal properties between their different atomic structures, which can be reversibly switched through thermal stimuli. However, the reliability of PCM-based optical components is not yet on par with that of storage-class devices. This is in part due to the challenges in maintaining a uniform temperature distribution across the PCM volume during phase transformation, which is essential to mitigate stress and element segregation as the device size exceeds a few micrometers. Understanding thermal transport in PCM-based devices is thus crucial as it dictates not only the durability but also the performance and power consumption of these devices. This article reviews recent advances in the development of PCM-based photonic devices from a thermal transport perspective and explores potential avenues to enhance device reliability. The aim is to provide insights into how PCM-based technologies can evolve beyond storage-class applications, maintain their functionality, and achieve longer lifetimes.
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Affiliation(s)
- Kiumars Aryana
- NASA Langley Research Center, Hampton, VA, 23666, USA
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Cosmin Constantin Popescu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Hongyi Sun
- Department of Materials Science & Engineering, University of Maryland, College Park, MD, 20742, USA
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Kiarash Aryana
- Department of Mechanical Engineering, Friedrich-Alexander-Universität Erlangen-Nuremberg, 91058, Erlangen, Germany
| | - Hyun Jung Kim
- NASA Langley Research Center, Hampton, VA, 23666, USA
- Department of Aerospace Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea
| | | | - Md Rafiqul Islam
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Carlos A Ríos Ocampo
- Department of Materials Science & Engineering, University of Maryland, College Park, MD, 20742, USA
- Institute for Research in Electronics & Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Tian Gu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Juejun Hu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
- Department of Physics, University of Virginia, Charlottesville, VA, 22904, USA
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2
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Jiang Y, Sun S, Zhang H, Wang X, Lei Y, Mazzarello R, Zhang W. Ab initio investigation of layered TMGeTe 3 alloys for phase-change applications. NANOSCALE 2025; 17:4372-4380. [PMID: 39829375 DOI: 10.1039/d4nr04728a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/22/2025]
Abstract
Chalcogenide phase-change materials (PCMs) are among the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to its enhanced amorphous stability and fast crystallization for embedded memory applications. The amorphous stability of CrGT was attributed to the complex layered structure of the crystalline motifs needed to initiate crystallization. A subsequent computational screening work identified several similar compounds with good thermal stability, such as InGeTe3, CrSiTe3 and BiSiTe3. Here, we explored the substitution of Cr in CrGT with other 3d metals and predicted four additional layered alloys to be dynamically stable, namely ScGeTe3, TiGeTe3, ZnGeTe3 and MnGeTe3. Thorough ab initio simulations performed on both crystalline and amorphous models of these materials indicate the former three alloys to be potential PCMs with sizable resistance contrast. Furthermore, we found that crystalline MnGeTe3 exhibits ferromagnetic behavior, whereas the amorphous state probably forms a spin glass phase. This makes MnGeTe3 a promising candidate for magnetic phase-change applications.
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Affiliation(s)
- Yihui Jiang
- Key Laboratory of Synthetic and Natural Functional Molecule of the Ministry of Education, College of Chemistry & Materials Science, Shaanxi Key Laboratory of Physico-Inorganic Chemistry, Northwest University, Xi'an 710127, China
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Suyang Sun
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
- Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, China.
| | - Hanyi Zhang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Xiaozhe Wang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Yibo Lei
- Key Laboratory of Synthetic and Natural Functional Molecule of the Ministry of Education, College of Chemistry & Materials Science, Shaanxi Key Laboratory of Physico-Inorganic Chemistry, Northwest University, Xi'an 710127, China
| | | | - Wei Zhang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
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Jones RO. The properties of solids: 'If you want to understand function, study structure'. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2025; 37:113001. [PMID: 39780356 DOI: 10.1088/1361-648x/ada412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2024] [Accepted: 12/30/2024] [Indexed: 01/11/2025]
Abstract
The importance of the structure-function relationship in molecular biology was confirmed dramatically by the recent award of the 2024 Nobel Prize in Chemistry 'for computational protein design' and 'for protein structure prediction'. The relationship is also important in chemistry and condensed matter physics, and we survey here structural concepts that have been developed over the past century, particularly in chemistry. As an example we take structural phase transitions in phase-change materials (PCM), which can be switched rapidly and reversibly between amorphous and crystalline states. Alloys of Ge, Sb, and Te are the materials of choice for PCM optical memory; they satisfy practical demands of stability and rapid crystallization, which results in metastable, rock salt structures, not the most stable (layered) crystalline forms.
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Affiliation(s)
- R O Jones
- Peter-Grünberg-Institut PGI-1, Forschungszentrum Jülich, D-52425 Jülich, Germany
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4
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Cojocaru‐Mirédin O, Yu Y, Köttgen J, Ghosh T, Schön C, Han S, Zhou C, Zhu M, Wuttig M. Atom Probe Tomography: a Local Probe for Chemical Bonds in Solids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403046. [PMID: 39520347 PMCID: PMC11636162 DOI: 10.1002/adma.202403046] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 10/10/2024] [Indexed: 11/16/2024]
Abstract
Atom probe tomography is frequently employed to characterize the elemental distribution in solids with atomic resolution. Here the potential of this technique to locally probe chemical bonds is reviewed and discussed. Two processes characterize the bond rupture in laser-assisted field emission, the probability of molecular ions (PMI), i.e., the probability that molecular ions are evaporated instead of single (atomic) ions, and the probability of multiple events (PME), i.e., the correlated field-evaporation of more than a single fragment upon laser- or voltage pulse excitation. Here it is demonstrated that one can clearly distinguish solids with metallic, covalent, and metavalent bonds based on their bond rupture, i.e., their PME and PMI values. These findings open new avenues in understanding and designing advanced materials, since they allow a quantification of bonds in solids on a nanometer scale, as will be shown for several examples. These possibilities would even justify calling the present approach bonding probe tomography (BPT).
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Affiliation(s)
- Oana Cojocaru‐Mirédin
- Physikalisches Institut IARWTH Aachen UniversitySommerfeldstraße 1452074AachenGermany
- INATECHUniversity of FreiburgGeorges‐Köhler Allee 10279110FreiburgGermany
| | - Yuan Yu
- Physikalisches Institut IARWTH Aachen UniversitySommerfeldstraße 1452074AachenGermany
| | - Jan Köttgen
- Physikalisches Institut IARWTH Aachen UniversitySommerfeldstraße 1452074AachenGermany
| | - Tanmoy Ghosh
- Physikalisches Institut IARWTH Aachen UniversitySommerfeldstraße 1452074AachenGermany
- Department of Sciences and HumanitiesRajiv Gandhi Institute of Petroleum Technology (RGIPT)JaisAmethiUP229304India
| | - Carl‐Friedrich Schön
- Physikalisches Institut IARWTH Aachen UniversitySommerfeldstraße 1452074AachenGermany
| | - Shuai Han
- State Key Laboratory of Solidification ProcessingNorthwestern Polytechnical UniversityXi'an710072China
| | - Chongjian Zhou
- State Key Laboratory of Solidification ProcessingNorthwestern Polytechnical UniversityXi'an710072China
| | - Min Zhu
- National Key Laboratory of Materials for Integrated CircuitsShanghai Institute of Microsystems and Information TechnologyChinese Academy of SciencesShanghai200050China
| | - Matthias Wuttig
- Physikalisches Institut IARWTH Aachen UniversitySommerfeldstraße 1452074AachenGermany
- Peter Grünberg Institute – JARA‐Institute Energy Efficient Information Technology (PGI‐10)Forschungszentrum Jülich GmbHWilhelm‐Johnen‐Straße52428JülichGermany
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Lee C, Kim D, Lim H, Seong Y, Kim H, Park JH, Yang D, Shin HJ, Wuttig M, Choi BJ, Cho MH. Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb 2Te 3 Superlattices Achieved by Tailoring Bonding and Structural Properties. ACS NANO 2024; 18:25625-25635. [PMID: 39223725 DOI: 10.1021/acsnano.4c06909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron-phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.
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Affiliation(s)
- Changwoo Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Dasol Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
- Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
| | - Hyeonwook Lim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Yeonwoo Seong
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Hyunwook Kim
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
| | - Ju Hwan Park
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
| | - Dogeon Yang
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Hee Jun Shin
- POSTECH, Pohang Accelerator Laboratory, 80, Jigokro-127-beongil, Nam-gu, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Matthias Wuttig
- Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
| | - Byung Joon Choi
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
- Department of System Semiconductor Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
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6
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Shuang Y, Mori S, Yamamoto T, Hatayama S, Saito Y, Fons PJ, Song YH, Hong JP, Ando D, Sutou Y. Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film. ACS NANO 2024; 18:21135-21143. [PMID: 39088786 PMCID: PMC11328172 DOI: 10.1021/acsnano.4c03574] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2024]
Abstract
Phase-change materials such as Ge-Sb-Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random-access memory (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and the large Joule heating energy required for the RESET process (amorphization) significantly limit the storage density. This study proposes a phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 105) and lower RESET energy (one order of magnitude reduction from GST). High-resolution transmission electron microscopy revealed a phase-change from the low-resistance cubic CrN phase into the highly resistive hexagonal CrN2 phase induced by the Soret-effect. The proposed phase-change nitride could greatly expand the scope of conventional phase-change chalcogenides and offer a strategy for the next-generation of PCRAM, enabling a large ON/OFF ratio (∼105), low switching energy (∼100 pJ), and fast operation (∼30 ns).
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Affiliation(s)
- Yi Shuang
- WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Shunsuke Mori
- Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan
| | - Takuya Yamamoto
- Department of Metallurgy, Graduate School of Engineering, Tohoku University, Miyagi 980-8579, Japan
| | - Shogo Hatayama
- Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan
| | - Yuta Saito
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Umezono 1-1-1, Tsukuba 305-8568, Japan
| | - Paul J Fons
- Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan
| | - Yun-Heub Song
- Department of Electronic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
| | - Jin-Pyo Hong
- Department of Physics, Hanyang University, Seoul 04763, Korea
| | - Daisuke Ando
- Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan
| | - Yuji Sutou
- WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan
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7
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Kim HJ, Julian M, Williams C, Bombara D, Hu J, Gu T, Aryana K, Sauti G, Humphreys W. Versatile spaceborne photonics with chalcogenide phase-change materials. NPJ Microgravity 2024; 10:20. [PMID: 38378811 PMCID: PMC10879159 DOI: 10.1038/s41526-024-00358-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Accepted: 01/24/2024] [Indexed: 02/22/2024] Open
Abstract
Recent growth in space systems has seen increasing capabilities packed into smaller and lighter Earth observation and deep space mission spacecraft. Phase-change materials (PCMs) are nonvolatile, reconfigurable, fast-switching, and have recently shown a high degree of space radiation tolerance, thereby making them an attractive materials platform for spaceborne photonics applications. They promise robust, lightweight, and energy-efficient reconfigurable optical systems whose functions can be dynamically defined on-demand and on-orbit to deliver enhanced science or mission support in harsh environments on lean power budgets. This comment aims to discuss the recent advances in rapidly growing PCM research and its potential to transition from conventional terrestrial optoelectronics materials platforms to versatile spaceborne photonic materials platforms for current and next-generation space and science missions. Materials International Space Station Experiment-14 (MISSE-14) mission-flown PCMs outside of the International Space Station (ISS) and key results and NASA examples are highlighted to provide strong evidence of the applicability of spaceborne photonics.
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Affiliation(s)
| | | | - Calum Williams
- Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK
| | - David Bombara
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Juejun Hu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Tian Gu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
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8
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Raty JY, Bichara C, Schön CF, Gatti C, Wuttig M. Tailoring chemical bonds to design unconventional glasses. Proc Natl Acad Sci U S A 2024; 121:e2316498121. [PMID: 38170754 PMCID: PMC10786265 DOI: 10.1073/pnas.2316498121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 12/02/2023] [Indexed: 01/05/2024] Open
Abstract
Glasses are commonly described as disordered counterparts of the corresponding crystals; both usually share the same short-range order, but glasses lack long-range order. Here, a quantification of chemical bonding in a series of glasses and their corresponding crystals is performed, employing two quantum-chemical bonding descriptors, the number of electrons transferred and shared between adjacent atoms. For popular glasses like SiO2, GeSe2, and GeSe, the quantum-chemical bonding descriptors of the glass and the corresponding crystal hardly differ. This explains why these glasses possess a similar short-range order as their crystals. Unconventional glasses, which differ significantly in their short-range order and optical properties from the corresponding crystals are only found in a distinct region of the map spanned by the two bonding descriptors. This region contains crystals of GeTe, Sb2Te3, and GeSb2Te4, which employ metavalent bonding. Hence, unconventional glasses are only obtained for solids, whose crystals employ theses peculiar bonds.
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Affiliation(s)
- Jean-Yves Raty
- Condensed Matter Simulation, Université de Liège, Sart-TilmanB4000, Belgium
| | - Christophe Bichara
- Centre Interdisciplinaire de Nanoscience de Marseille, Aix-Marseille University, CNRS UMR 7325, 13288 Marseille, France
| | - Carl-Friedrich Schön
- Institute of Physics 1A, Rheinisch-Westfälische Technische Hochschule Aachen University, 52074Aachen, Germany
| | - Carlo Gatti
- Consiglio Nazionale delle Ricerche - Istituto di Scienze e Tecnologie Chimiche “Giulio Natta”, Milano20133, Italy
- Istituto Lombardo Accademia di Scienze e Lettere, Milano20121, Italy
| | - Matthias Wuttig
- Institute of Physics 1A, Rheinisch-Westfälische Technische Hochschule Aachen University, 52074Aachen, Germany
- Peter-Grünberg-Institute (PGI 10), Forschungszentrum Jülich, Jülich52428, Germany
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Schenk FM, Zellweger T, Kumaar D, Bošković D, Wintersteller S, Solokha P, De Negri S, Emboras A, Wood V, Yarema M. Phase-Change Memory from Molecular Tellurides. ACS NANO 2024; 18:1063-1072. [PMID: 38117038 PMCID: PMC10786157 DOI: 10.1021/acsnano.3c10312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 12/13/2023] [Accepted: 12/15/2023] [Indexed: 12/21/2023]
Abstract
Phase-change memory (PCM) is an emerging memory technology based on the resistance contrast between the crystalline and amorphous states of a material. Further development and realization of PCM as a mainstream memory technology rely on innovative materials and inexpensive fabrication methods. Here, we propose a generalizable and scalable solution-processing approach to synthesize phase-change telluride inks in order to meet demands for high-throughput material screening, increased energy efficiency, and advanced device architectures. Bulk tellurides, such as Sb2Te3, GeTe, Sc2Te3, and TiTe2, are dissolved and purified to obtain inks of molecular metal telluride complexes. This allowed us to unlock a wide range of solution-processed ternary tellurides by the simple mixing of binary inks. We demonstrate accurate and quantitative composition control, including prototype materials (Ge-Sb-Te) and emerging rare-earth-metal telluride-doped materials (Sc-Sb-Te). Spin-coating and annealing convert ink formulations into high-quality, phase-pure telluride films with preferred orientation along the (00l) direction. Deposition engineering of liquid tellurides enables thickness-tunable films, infilling of nanoscale vias, and film preparation on flexible substrates. Finally, we demonstrate cyclable and non-volatile prototype memory devices, achieving performance indicators such as resistance contrast and low reset energy on par with state-of-the-art sputtered PCM layers.
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Affiliation(s)
- Florian M Schenk
- Chemistry and Materials Design Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Till Zellweger
- Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Dhananjeya Kumaar
- Chemistry and Materials Design Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Darijan Bošković
- Chemistry and Materials Design Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Simon Wintersteller
- Chemistry and Materials Design Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Pavlo Solokha
- Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, I-16146 Genova, Italy
| | - Serena De Negri
- Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, I-16146 Genova, Italy
| | - Alexandros Emboras
- Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Vanessa Wood
- Materials and Device Engineering Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
| | - Maksym Yarema
- Chemistry and Materials Design Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland
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10
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Fujita T, Chen Y, Kono Y, Takahashi S, Kasai H, Campi D, Bernasconi M, Ohara K, Yumoto H, Koyama T, Yamazaki H, Senba Y, Ohashi H, Inoue I, Hayashi Y, Yabashi M, Nishibori E, Mazzarello R, Wei S. Pressure-induced reversal of Peierls-like distortions elicits the polyamorphic transition in GeTe and GeSe. Nat Commun 2023; 14:7851. [PMID: 38062025 PMCID: PMC10703813 DOI: 10.1038/s41467-023-43457-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/09/2023] [Indexed: 03/06/2025] Open
Abstract
While polymorphism is prevalent in crystalline solids, polyamorphism draws increasing interest in various types of amorphous solids. Recent studies suggested that supercooling of liquid phase-change materials (PCMs) induces Peierls-like distortions in their local structures, underlying their liquid-liquid transitions before vitrification. However, the mechanism of how the vitrified phases undergo a possible polyamorphic transition remains elusive. Here, using high-energy synchrotron X-rays, we can access the precise pair distribution functions under high pressure and provide clear evidence that pressure can reverse the Peierls-like distortions, eliciting a polyamorphic transition in GeTe and GeSe. Combined with simulations based on machine-learned-neural-network potential, our structural analysis reveals a high-pressure state characterized by diminished Peierls-like distortion, greater coherence length, reduced compressibility, and a narrowing bandgap. Our finding underscores the crucial role of Peierls-like distortions in amorphous octahedral systems including PCMs. These distortions can be controlled through pressure and composition, offering potentials for designing properties in PCM-based devices.
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Affiliation(s)
- Tomoki Fujita
- Department of Chemistry, Aarhus University, 8000, Aarhus C, Denmark
| | - Yuhan Chen
- Department of Physics, Sapienza University of Rome, Rome, 00185, Italy
| | - Yoshio Kono
- Geodynamics Research Center, Ehime University, Matsuyama, 790-8577, Japan
| | - Seiya Takahashi
- Department of Physics, Faculty of Pure and Applied Sciences and Tsukuba Research Center for Energy Materials Science (TREMS), University of Tsukuba, Ibaraki, 305-8571, Japan
| | - Hidetaka Kasai
- Department of Physics, Faculty of Pure and Applied Sciences and Tsukuba Research Center for Energy Materials Science (TREMS), University of Tsukuba, Ibaraki, 305-8571, Japan
| | - Davide Campi
- Department of Materials Science, University of Milano-Bicocca, I-20125, Milano, Italy
| | - Marco Bernasconi
- Department of Materials Science, University of Milano-Bicocca, I-20125, Milano, Italy
| | - Koji Ohara
- Faculty of Materials for Energy, Shimane University, Matsue, Shimane, 690-8504, Japan
| | - Hirokatsu Yumoto
- Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Takahisa Koyama
- Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Hiroshi Yamazaki
- Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Yasunori Senba
- Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Haruhiko Ohashi
- Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Ichiro Inoue
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Yujiro Hayashi
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Makina Yabashi
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan
| | - Eiji Nishibori
- Department of Physics, Faculty of Pure and Applied Sciences and Tsukuba Research Center for Energy Materials Science (TREMS), University of Tsukuba, Ibaraki, 305-8571, Japan
| | | | - Shuai Wei
- Department of Chemistry, Aarhus University, 8000, Aarhus C, Denmark.
- iMAT Centre for Integrated Materials Research, Aarhus University, Aarhus, Denmark.
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11
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Prabhathan P, Sreekanth KV, Teng J, Ko JH, Yoo YJ, Jeong HH, Lee Y, Zhang S, Cao T, Popescu CC, Mills B, Gu T, Fang Z, Chen R, Tong H, Wang Y, He Q, Lu Y, Liu Z, Yu H, Mandal A, Cui Y, Ansari AS, Bhingardive V, Kang M, Lai CK, Merklein M, Müller MJ, Song YM, Tian Z, Hu J, Losurdo M, Majumdar A, Miao X, Chen X, Gholipour B, Richardson KA, Eggleton BJ, Sharda K, Wuttig M, Singh R. Roadmap for phase change materials in photonics and beyond. iScience 2023; 26:107946. [PMID: 37854690 PMCID: PMC10579438 DOI: 10.1016/j.isci.2023.107946] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2023] Open
Abstract
Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.
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Affiliation(s)
- Patinharekandy Prabhathan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Kandammathe Valiyaveedu Sreekanth
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A∗STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A∗STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Joo Hwan Ko
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Young Jin Yoo
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Hyeon-Ho Jeong
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Yubin Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Shoujun Zhang
- DELL, Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Key Laboratory of Optoelectronic Information Technology (Ministry of Education of China), Tianjin University, Tianjin 300072, China
| | - Tun Cao
- DELL, School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China
| | - Cosmin-Constantin Popescu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Brian Mills
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Tian Gu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zhuoran Fang
- Department of Electrical & Computer Engineering, University of Washington, Washington, Seattle, USA
| | - Rui Chen
- Department of Electrical & Computer Engineering, University of Washington, Washington, Seattle, USA
| | - Hao Tong
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Yi Wang
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Qiang He
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Yitao Lu
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Zhiyuan Liu
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Han Yu
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Avik Mandal
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Yihao Cui
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Abbas Sheikh Ansari
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Viraj Bhingardive
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Myungkoo Kang
- CREOL, College of Optics and Photonics, University of Central Florida, Orlando, FL, USA
| | - Choon Kong Lai
- Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, New South Wales, NSW 2006, Australia
- The University of Sydney Nano Institute (Sydney Nano), The University of Sydney, New South Wales, NSW 2006, Australia
| | - Moritz Merklein
- Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, New South Wales, NSW 2006, Australia
- The University of Sydney Nano Institute (Sydney Nano), The University of Sydney, New South Wales, NSW 2006, Australia
| | | | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- Anti-Viral Research Center, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- AI Graduate School, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Zhen Tian
- DELL, Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Key Laboratory of Optoelectronic Information Technology (Ministry of Education of China), Tianjin University, Tianjin 300072, China
| | - Juejun Hu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Maria Losurdo
- Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia, CNR-ICMATE, Corso Stati Uniti 4, 35127 Padova, Italy
| | - Arka Majumdar
- Department of Electrical & Computer Engineering, University of Washington, Washington, Seattle, USA
| | - Xiangshui Miao
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Xiao Chen
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Behrad Gholipour
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Kathleen A. Richardson
- CREOL, College of Optics and Photonics, University of Central Florida, Orlando, FL, USA
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL, USA
| | - Benjamin J. Eggleton
- Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, New South Wales, NSW 2006, Australia
- The University of Sydney Nano Institute (Sydney Nano), The University of Sydney, New South Wales, NSW 2006, Australia
| | - Kanudha Sharda
- iScience, Cell Press, 125 London Wall, Barbican, London EC2Y 5AJ, UK
- iScience, Cell Press, RELX India Pvt Ltd., 14th Floor, Building No. 10B, DLF Cyber City, Phase II, Gurugram, Haryana 122002, India
| | - Matthias Wuttig
- Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
- Peter Grünberg Institute (PGI 10), Forschungszentrum Jülich, 52428 Jülich, Germany
| | - Ranjan Singh
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, 50 Nanyang Avenue, Singapore 639798, Singapore
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12
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Wuttig M, Schön CF, Lötfering J, Golub P, Gatti C, Raty JY. Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208485. [PMID: 36456187 DOI: 10.1002/adma.202208485] [Citation(s) in RCA: 37] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Revised: 10/31/2022] [Indexed: 05/19/2023]
Abstract
Quantum chemical bonding descriptors have recently been utilized to design materials with tailored properties. Their usage to facilitate a quantitative description of bonding in chalcogenides as well as the transition between different bonding mechanisms is reviewed. More importantly, these descriptors can also be employed as property predictors for several important material characteristics, including optical and transport properties. Hence, these quantum chemical bonding descriptors can be utilized to tailor material properties of chalcogenides relevant for thermoelectrics, photovoltaics, and phase-change memories. Relating material properties to bonding mechanisms also shows that there is a class of materials, which are characterized by unconventional properties such as a pronounced anharmonicity, a large chemical bond polarizability, and strong optical absorption. This unusual property portfolio is attributed to a novel bonding mechanism, fundamentally different from ionic, metallic, and covalent bonding, which is called "metavalent." In the concluding section, a number of promising research directions are sketched, which explore the nature of the property changes upon changing bonding mechanism and extend the concept of quantum chemical property predictors to more complex compounds.
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Affiliation(s)
- Matthias Wuttig
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056, Aachen, Germany
- Jülich-Aachen Research Alliance (JARA FIT and JARA HPC), RWTH Aachen University, 52056, Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428, Jülich, Germany
| | - Carl-Friedrich Schön
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056, Aachen, Germany
| | - Jakob Lötfering
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056, Aachen, Germany
| | - Pavlo Golub
- Department of Theoretical Chemistry, J. Heyrovský Institute of Physical Chemistry, Dolejškova 2155/3, Prague 8, 182 23, Czech Republic
| | - Carlo Gatti
- CNR-SCITEC, Istituto di Scienze e Tecnologie Chimiche "Giulio Natta", sezione di via Golgi, via Golgi 19, Milano, 20133, Italy
| | - Jean-Yves Raty
- CESAM B5, Université de Liège, Sart-Tilman, B4000, Belgium
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13
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Kumaar D, Can M, Portner K, Weigand H, Yarema O, Wintersteller S, Schenk F, Boskovic D, Pharizat N, Meinert R, Gilshtein E, Romanyuk Y, Karvounis A, Grange R, Emboras A, Wood V, Yarema M. Colloidal Ternary Telluride Quantum Dots for Tunable Phase Change Optics in the Visible and Near-Infrared. ACS NANO 2023; 17:6985-6997. [PMID: 36971128 PMCID: PMC10100560 DOI: 10.1021/acsnano.3c01187] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Accepted: 03/23/2023] [Indexed: 06/18/2023]
Abstract
A structural change between amorphous and crystalline phase provides a basis for reliable and modular photonic and electronic devices, such as nonvolatile memory, beam steerers, solid-state reflective displays, or mid-IR antennas. In this paper, we leverage the benefits of liquid-based synthesis to access phase-change memory tellurides in the form of colloidally stable quantum dots. We report a library of ternary MxGe1-xTe colloids (where M is Sn, Bi, Pb, In, Co, Ag) and then showcase the phase, composition, and size tunability for Sn-Ge-Te quantum dots. Full chemical control of Sn-Ge-Te quantum dots permits a systematic study of structural and optical properties of this phase-change nanomaterial. Specifically, we report composition-dependent crystallization temperature for Sn-Ge-Te quantum dots, which is notably higher compared to bulk thin films. This gives the synergistic benefit of tailoring dopant and material dimension to combine the superior aging properties and ultrafast crystallization kinetics of bulk Sn-Ge-Te, while improving memory data retention due to nanoscale size effects. Furthermore, we discover a large reflectivity contrast between amorphous and crystalline Sn-Ge-Te thin films, exceeding 0.7 in the near-IR spectrum region. We utilize these excellent phase-change optical properties of Sn-Ge-Te quantum dots along with liquid-based processability for nonvolatile multicolor images and electro-optical phase-change devices. Our colloidal approach for phase-change applications offers higher customizability of materials, simpler fabrication, and further miniaturization to the sub-10 nm phase-change devices.
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Affiliation(s)
- Dhananjeya Kumaar
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Matthias Can
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Kevin Portner
- Integrated
Systems Laboratory, Department of Information Technology and Electrical
Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Helena Weigand
- Optical
Nanomaterial Group, Institute for Quantum Electronics, Department
of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Olesya Yarema
- Materials
and Device Engineering, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Simon Wintersteller
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Florian Schenk
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Darijan Boskovic
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Nathan Pharizat
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Robin Meinert
- Integrated
Systems Laboratory, Department of Information Technology and Electrical
Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Evgeniia Gilshtein
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Yaroslav Romanyuk
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Artemios Karvounis
- Optical
Nanomaterial Group, Institute for Quantum Electronics, Department
of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Rachel Grange
- Optical
Nanomaterial Group, Institute for Quantum Electronics, Department
of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Alexandros Emboras
- Integrated
Systems Laboratory, Department of Information Technology and Electrical
Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Vanessa Wood
- Materials
and Device Engineering, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Maksym Yarema
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
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14
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Lucas P, Takeda W, Pries J, Benke-Jacob J, Wuttig M. Fast crystallization below the glass transition temperature in hyperquenched systems. J Chem Phys 2023; 158:054502. [PMID: 36754790 DOI: 10.1063/5.0136306] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023] Open
Abstract
Many phase change materials (PCMs) are found to crystallize without exhibiting a glass transition endotherm upon reheating. In this paper, we review experimental evidence revealing that these PCMs and likely other hyperquenched molecular and metallic systems can crystallize from the glassy state when reheated at a standard rate. Among these evidences, PCMs annealed below the glass transition temperature Tg exhibit slower crystallization kinetics despite an increase in the number of sub-critical nuclei that should promote the crystallization speed. Flash calorimetry uncovers the glass transition endotherm hidden by crystallization and reveals a distinct change in kinetics when crystallization switches from the glassy to the supercooled liquid state. The resulting Tg value also rationalizes the presence of the pre-Tg relaxation exotherm ubiquitous of hyperquenched systems. Finally, the shift in crystallization temperature during annealing exhibits a non-exponential decay that is characteristic of structural relaxation in the glass. Modeling using a modified Turnbull equation for nucleation rate supports the existence of sub-Tg fast crystallization and emphasizes the benefit of a fragile-to-strong transition for PCM applications due to a reduction in crystallization at low temperature (improved data retention) and increasing its speed at high temperature (faster computing).
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Affiliation(s)
- Pierre Lucas
- Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712, USA
| | - Wataru Takeda
- Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712, USA
| | - Julian Pries
- Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
| | - Julia Benke-Jacob
- Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
| | - Matthias Wuttig
- Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
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15
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Sen R, Paul S, Krishnamurthy S, Devi A, Mani E, Gebbink RK, Roy S. Time gel and origin of matter. J INDIAN CHEM SOC 2023. [DOI: 10.1016/j.jics.2023.100897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
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16
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Kim D, Kim Y, Oh JS, Lee C, Lim H, Yang CW, Sim E, Cho MH. Conversion between Metavalent and Covalent Bond in Metastable Superlattices Composed of 2D and 3D Sublayers. ACS NANO 2022; 16:20758-20769. [PMID: 36469438 DOI: 10.1021/acsnano.2c07811] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Reversible conversion over multimillion times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, an extended category of crystal structures from stable states via redistribution of vacancies, research on kinetic behavior of the vacancies is highly in demand. However, it remains lacking due to difficulties with experimental analysis. Herein, the direct observation of the evolution of chemical states of vacancies clarifies the behavior by combining analysis on charge density distribution, electrical conductivity, and crystal structures. Site-switching of vacancies of Sb2Te3 gradually occurs with diverged energy barriers owing to their own activation code: the accumulation of vacancies triggers spontaneous gliding along atomic planes to relieve electrostatic repulsion. Studies on the behavior can be further applied to multiphase superlattices composed of Sb2Te3 (2D) and GeTe (3D) sublayers, which represent superior memory performances, but their operating mechanisms were still under debate due to their complexity. The site-switching is favorable (suppressed) when Te-Te bonds are formed as physisorption (chemisorption) over the interface between Sb2Te3 (2D) and GeTe (3D) sublayers driven by configurational entropic gain (electrostatic enthalpic loss). Depending on the type of interfaces between sublayers, phases of the superlattices are classified into metastable and stable states, where the conversion could only be achieved in the metastable state. From this comprehensive understanding on the operating mechanism via kinetic behaviors of vacancies and the metastability, further studies toward vacancy engineering are expected in versatile materials.
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Affiliation(s)
- Dasol Kim
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
| | - Youngsam Kim
- Department of Chemistry, Yonsei University, 03722 Seoul, Republic of Korea
| | - Jin-Su Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
| | - Changwoo Lee
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
| | - Hyeonwook Lim
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
| | - Cheol-Woong Yang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
| | - Eunji Sim
- Department of Chemistry, Yonsei University, 03722 Seoul, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
- Department of System Semiconductor Engineering, Yonsei University, 03722 Seoul, Republic of Korea
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17
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Highly tunable β-relaxation enables the tailoring of crystallization in phase-change materials. Nat Commun 2022; 13:7352. [DOI: 10.1038/s41467-022-35005-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 11/15/2022] [Indexed: 11/30/2022] Open
Abstract
AbstractIn glasses, secondary (β-) relaxations are the predominant source of atomic dynamics. Recently, they have been discovered in covalently bonded glasses, i.e., amorphous phase-change materials (PCMs). However, it is unclear what the mechanism of β-relaxations is in covalent systems and how they are related to crystallization behaviors of PCMs that are crucial properties for non-volatile memories and neuromorphic applications. Here we show direct evidence that crystallization is strongly linked to β-relaxations. We find that the β-relaxation in Ge15Sb85 possesses a high tunability, which enables a manipulation of crystallization kinetics by an order of magnitude. In-situ synchrotron X-ray scattering, dielectric functions, and ab-initio calculations indicate that the weakened β-relaxation intensity stems from a local reinforcement of Peierls-like distortions, which increases the rigidity of the bonding network and decreases the dynamic heterogeneity. Our findings offer a conceptually new approach to tuning the crystallization of PCMs based on manipulating the β-relaxations.
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18
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Schön CF, van Bergerem S, Mattes C, Yadav A, Grohe M, Kobbelt L, Wuttig M. Classification of properties and their relation to chemical bonding: Essential steps toward the inverse design of functional materials. SCIENCE ADVANCES 2022; 8:eade0828. [PMID: 36427303 PMCID: PMC9699668 DOI: 10.1126/sciadv.ade0828] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 10/05/2022] [Indexed: 05/26/2023]
Abstract
To design advanced functional materials, different concepts are currently pursued, including machine learning and high-throughput calculations. Here, a different approach is presented, which uses the innate structure of the multidimensional property space. Clustering algorithms confirm the intricate structure of property space and relate the different property classes to different chemical bonding mechanisms. For the inorganic compounds studied here, four different property classes are identified and related to ionic, metallic, covalent, and recently identified metavalent bonding. These different bonding mechanisms can be quantified by two quantum chemical bonding descriptors, the number of electrons transferred and the number of electrons shared between adjacent atoms. Hence, we can link these bonding descriptors to the corresponding property portfolio, turning bonding descriptors into property predictors. The close relationship between material properties and quantum chemical bonding descriptors can be used for an inverse material design, identifying particularly promising materials based on a set of target functionalities.
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Affiliation(s)
- Carl-Friedrich Schön
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
| | - Steffen van Bergerem
- Chair of Computer Science 7–Logic and Theory of Discrete Systems, RWTH Aachen University, 52074 Aachen, Germany
| | - Christian Mattes
- Visual Computing Institute, RWTH Aachen University, 52074 Aachen, Germany
| | - Aakash Yadav
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
- Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Eonyang-eup, Ulju-gun, Ulsan, South Korea
| | - Martin Grohe
- Chair of Computer Science 7–Logic and Theory of Discrete Systems, RWTH Aachen University, 52074 Aachen, Germany
| | - Leif Kobbelt
- Visual Computing Institute, RWTH Aachen University, 52074 Aachen, Germany
| | - Matthias Wuttig
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
- Jülich-Aachen Research Alliance (JARA FIT and JARA HPC), RWTH Aachen University, 52056 Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
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19
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Stable amorphous solid dispersion of flubendazole with high loading via electrospinning. J Control Release 2022; 351:123-136. [PMID: 36122898 DOI: 10.1016/j.jconrel.2022.09.028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2022] [Revised: 08/30/2022] [Accepted: 09/13/2022] [Indexed: 11/22/2022]
Abstract
In this work, an important step is taken towards the bioavailability improvement of poorly water-soluble drugs, such as flubendazole (Flu), posing a challenge in the current development of many novel oral-administrable therapeutics. Solvent electrospinning of a solution of the drug and poly (2-ethyl-2-oxazoline) (PEtOx) is demonstrated to be a viable strategy to produce stable nanofibrous amorphous solid dispersions (ASDs) with ultrahigh drug-loadings (up to 55 wt% Flu) and long-term stability (at least one year). Importantly, at such high drug loadings, the concentration of the polymer in the electrospinning solution has to be lowered below the concentration where it can be spun in absence of the drug as the interactions between the polymer and the drug result in increased solution viscosity. A combination of experimental analysis and molecular dynamics simulations revealed that this formulation strategy provides strong, dominant and highly stable hydrogen bonds between the polymer and the drug, which is crucial to obtain the high drug-loadings and to preserve the long-term amorphous character of the ASDs upon storage. In vitro drug release studies confirm the remarkable potential of this electrospinning formulation strategy by significantly increased drug solubility values and dissolution rates (respectively tripled and quadrupled compared to the crystalline drug), even after storing the formulation for one year.
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Evolutionary neural architecture search for surrogate models to enable optimization of industrial continuous crystallization process. POWDER TECHNOL 2022. [DOI: 10.1016/j.powtec.2022.117527] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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Roy S. Time-Gel. J INDIAN CHEM SOC 2022. [DOI: 10.1016/j.jics.2022.100431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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