1
|
Yu K, Li X, Zhao H, Ma C, Wang Z, Lv P, Hu E, Zheng J, Wei W, Ostrikov KK. Plasma-Induced 2D Electron Transport at Hetero-Phase Titanium Oxide Interface. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304919. [PMID: 38059826 PMCID: PMC10837385 DOI: 10.1002/advs.202304919] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Revised: 11/21/2023] [Indexed: 12/08/2023]
Abstract
Interfaces of metal oxide heterojunctions display a variety of intriguing physical properties that enable novel applications in spintronics, quantum information, neuromorphic computing, and high-temperature superconductivity. One such LaAlO3 /SrTiO3 (LAO/STO) heterojunction hosts a 2D electron liquid (2DEL) presenting remarkable 2D superconductivity and magnetism. However, these remarkable properties emerge only at very low temperatures, while the heterostructure fabrication is challenging even at the laboratory scale, thus impeding practical applications. Here, a novel plasma-enabled fabrication concept is presented to develop the TiO2 /Ti3 O4 hetero-phase bilayer with a 2DEL that exhibits features of a weakly localized Fermi liquid even at room temperature. The hetero-phase bilayer is fabricated by applying a rapid plasma-induced phase transition that transforms a specific portion of anatase TiO2 thin film into vacancy-prone Ti3 O4 in seconds. The underlying mechanism relies on the screening effect of the achieved high-density electron liquid that suppresses the electron-phonon interactions. The achieved "adiabatic" electron transport in the hetero-phase bilayer offers strong potential for low-loss electric or plasmonic circuits and hot electron harvesting and utilization. These findings open new horizons for fabricating diverse multifunctional metal oxide heterostructures as an innovative platform for emerging clean energy, integrated photonics, spintronics, and quantum information technologies.
Collapse
Affiliation(s)
- Kehan Yu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing, 210036, China
| | - Xinglong Li
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Haoyu Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Chen Ma
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhongyue Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Peng Lv
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Ertao Hu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jiajin Zheng
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing, 210036, China
| | - Wei Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing, 210036, China
| | - Kostya Ken Ostrikov
- School of Chemistry and Physics and QUT Centre for Materials Science, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
| |
Collapse
|
2
|
Giri A, Walton SG, Tomko J, Bhatt N, Johnson MJ, Boris DR, Lu G, Caldwell JD, Prezhdo OV, Hopkins PE. Ultrafast and Nanoscale Energy Transduction Mechanisms and Coupled Thermal Transport across Interfaces. ACS NANO 2023; 17:14253-14282. [PMID: 37459320 PMCID: PMC10416573 DOI: 10.1021/acsnano.3c02417] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 06/06/2023] [Indexed: 08/09/2023]
Abstract
The coupled interactions among the fundamental carriers of charge, heat, and electromagnetic fields at interfaces and boundaries give rise to energetic processes that enable a wide array of technologies. The energy transduction among these coupled carriers results in thermal dissipation at these surfaces, often quantified by the thermal boundary resistance, thus driving the functionalities of the modern nanotechnologies that are continuing to provide transformational benefits in computing, communication, health care, clean energy, power recycling, sensing, and manufacturing, to name a few. It is the purpose of this Review to summarize recent works that have been reported on ultrafast and nanoscale energy transduction and heat transfer mechanisms across interfaces when different thermal carriers couple near or across interfaces. We review coupled heat transfer mechanisms at interfaces of solids, liquids, gasses, and plasmas that drive the resulting interfacial heat transfer and temperature gradients due to energy and momentum coupling among various combinations of electrons, vibrons, photons, polaritons (plasmon polaritons and phonon polaritons), and molecules. These interfacial thermal transport processes with coupled energy carriers involve relatively recent research, and thus, several opportunities exist to further develop these nascent fields, which we comment on throughout the course of this Review.
Collapse
Affiliation(s)
- Ashutosh Giri
- Department
of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881, United States
| | - Scott G. Walton
- Plasma
Physics Division, Naval Research Laboratory, Washington, DC 22032, United States
| | - John Tomko
- Department
of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Niraj Bhatt
- Department
of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881, United States
| | - Michael J. Johnson
- Plasma
Physics Division, Naval Research Laboratory, Washington, DC 22032, United States
| | - David R. Boris
- Plasma
Physics Division, Naval Research Laboratory, Washington, DC 22032, United States
| | - Guanyu Lu
- Department
of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Joshua D. Caldwell
- Department
of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Interdisciplinary
Materials Science, Vanderbilt University, Nashville, Tennessee 37235, United States
- Vanderbilt
Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Oleg V. Prezhdo
- Department
of Chemistry, University of Southern California, Los Angeles, California 90089, United States
- Department
of Physics and Astronomy, University of
Southern California, Los Angeles, California 90089, United States
| | - Patrick E. Hopkins
- Department
of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
- Department
of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
| |
Collapse
|
3
|
Zhang T, Zheng Y, Zhao X, Lin M, Yang B, Yan J, Zhuang Z, Yu Y. Scalable Synthesis of Holey Deficient 2D Co/NiO Single-Crystal Nanomeshes via Topological Transformation for Efficient Photocatalytic CO 2 Reduction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206873. [PMID: 36609921 DOI: 10.1002/smll.202206873] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 12/18/2022] [Indexed: 06/17/2023]
Abstract
Preparation of holey, single-crystal, 2D nanomaterials containing in-plane nanosized pores is very appealing for the environment and energy-related applications. Herein, an in situ topological transformation is showcased of 2D layered double hydroxides (LDHs) allows scalable synthesis of holey, single-crystal 2D transition metal oxides (TMOs) nanomesh of ultrathin thickness. As-synthesized 2D Co/NiO-2 nanomesh delivers superior photocatalytic CO2 -syngas conversion efficiency (i.e., VCO of 32460 µmol h-1 g-1 CO and V H 2 ${V_{{{\rm{H}}_2}}}$ of 17840 µmol h-1 g-1 H2 ), with VCO about 7.08 and 2.53 times that of NiO and 2D Co/NiO-1 nanomesh containing larger pore size, respectively. As revealed in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), the high performance of Co/NiO-2 nanomesh primarily originates from the edge sites of nanopores, which carry more defect structures (e.g., atomic steps or vacancies) than basal plane for CO2 adsorption, and from its single-crystal structure adept at charge transport. Theoretical calculation shows the topological transformation from 2D hydroxide to holey 2D oxide can be achieved, probably since the trace Co dopant induces a lattice distortion and thus a sharp decrease of the dehydration energy of hydroxide precursor. The findings can advance the design of intriguing holey 2D materials with well-defined geometric and electronic properties.
Collapse
Affiliation(s)
- Tingshi Zhang
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Yanting Zheng
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Xin Zhao
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Mingxiong Lin
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Bixia Yang
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Jiawei Yan
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Zanyong Zhuang
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| | - Yan Yu
- College of Materials Science and Engineering Fuzhou University, New Campus, Minhou, Fujian, 350108, China
- Key Laboratory of Advanced Materials Technology, Fuzhou University, Fuzhou, 350108, China
| |
Collapse
|
4
|
Kim JR, Sohn B, Lee HJ, Lee S, Ko EK, Hahn S, Lee S, Kim Y, Kim D, Kim HJ, Kim Y, Son J, Ahn CH, Walker FJ, Go A, Kim M, Kim CH, Kim C, Noh TW. Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208833. [PMID: 36739615 DOI: 10.1002/adma.202208833] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 01/08/2023] [Indexed: 06/18/2023]
Abstract
Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO3 is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO3 . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.
Collapse
Affiliation(s)
- Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
| | - Hyeong Jun Lee
- Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon, 34126, South Korea
| | - Sangmin Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea
| | - Eun Kyo Ko
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Sungsoo Hahn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Sangjae Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Hong Joon Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Youngdo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Jaeseok Son
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Charles H Ahn
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
- Department of Physics, Yale University, New Haven, CT, 06520, USA
| | - Frederick J Walker
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
| | - Ara Go
- Department of Physics, Chonnam National University, Gwangju, 61186, South Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea
| | - Choong H Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| |
Collapse
|
5
|
Hoglund ER, Bao DL, O'Hara A, Pfeifer TW, Hoque MSB, Makarem S, Howe JM, Pantelides ST, Hopkins PE, Hachtel JA. Direct Visualization of Localized Vibrations at Complex Grain Boundaries. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208920. [PMID: 36634374 DOI: 10.1002/adma.202208920] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 11/25/2022] [Indexed: 06/17/2023]
Abstract
Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The functionality at a GB results from the unique atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared optical, and thermal properties. In this work, a SrTiO3 GB is examined using atomic-resolution aberration-corrected scanning transmission electron microscopy and ultrahigh-energy-resolution monochromated electron energy-loss spectroscopy, in conjunction with density functional theory. This combination enables the correlation of the GB structure, nonstoichiometry, and chemical bonding with a redistribution of vibrational states within the GB dislocation cores. The new experimental access to localized GB vibrations provides a direct route to quantifying the impact of individual boundaries on macroscopic properties.
Collapse
Affiliation(s)
- Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - De-Liang Bao
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA
| | - Andrew O'Hara
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA
| | - Thomas W Pfeifer
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Sara Makarem
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Sokrates T Pantelides
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| |
Collapse
|
6
|
Chen S, Zhang Q, Li X, Zhao J, Lin S, Jin Q, Hong H, Huon A, Charlton T, Li Q, Yan W, Wang J, Ge C, Wang C, Wang B, Fitzsimmons MR, Guo H, Gu L, Yin W, Jin KJ, Guo EJ. Atomically engineered cobaltite layers for robust ferromagnetism. SCIENCE ADVANCES 2022; 8:eabq3981. [PMID: 36306366 PMCID: PMC9616489 DOI: 10.1126/sciadv.abq3981] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.
Collapse
Affiliation(s)
- Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xujing Li
- University of Chinese Academy of Sciences, Beijing 100049, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Jiali Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Amanda Huon
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Department of Mathematics, Physics, and Statistics, University of the Sciences, Philadelphia, PA 19104, USA
| | - Timothy Charlton
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Qian Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Jiaou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Baotian Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Michael R. Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, USA
| | - Haizhong Guo
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Wen Yin
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Corresponding author. (W.Y.); (K.-j.J.); (E.J.G.)
| | - Kui-juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Corresponding author. (W.Y.); (K.-j.J.); (E.J.G.)
| | - Er Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Corresponding author. (W.Y.); (K.-j.J.); (E.J.G.)
| |
Collapse
|
7
|
Zhang H, Pryds N, Park DS, Gauquelin N, Santucci S, Christensen DV, Jannis D, Chezganov D, Rata DA, Insinga AR, Castelli IE, Verbeeck J, Lubomirsky I, Muralt P, Damjanovic D, Esposito V. Atomically engineered interfaces yield extraordinary electrostriction. Nature 2022; 609:695-700. [PMID: 36131038 DOI: 10.1038/s41586-022-05073-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Accepted: 07/05/2022] [Indexed: 11/09/2022]
Abstract
Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10-19 m2 V-2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. The value of the electrostriction coefficient achieved is 2.38 × 10-14 m2 V-2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.
Collapse
Affiliation(s)
- Haiwu Zhang
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark.
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark.
| | - Dae-Sung Park
- Group for Ferroelectrics and Functional Oxides, Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, Switzerland
| | - Nicolas Gauquelin
- Electron Microscopy for Materials Science, University of Antwerp, Antwerp, Belgium
| | - Simone Santucci
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Dennis V Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Daen Jannis
- Electron Microscopy for Materials Science, University of Antwerp, Antwerp, Belgium
| | - Dmitry Chezganov
- Electron Microscopy for Materials Science, University of Antwerp, Antwerp, Belgium
| | - Diana A Rata
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany
| | - Andrea R Insinga
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Ivano E Castelli
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Johan Verbeeck
- Electron Microscopy for Materials Science, University of Antwerp, Antwerp, Belgium
| | - Igor Lubomirsky
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
| | - Paul Muralt
- Institute of Materials, Swiss Federal Institute of Technology in Lausanne - EPFL, Lausanne, Switzerland
| | - Dragan Damjanovic
- Group for Ferroelectrics and Functional Oxides, Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, Switzerland
| | - Vincenzo Esposito
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, Denmark.
| |
Collapse
|
8
|
Lu X, Liu J, Zhang N, Xie B, Yang S, Liu W, Jiang Z, Huang Z, Yang Y, Miao J, Li W, Cho S, Liu Z, Liu Z, Shen D. Dimensionality-Controlled Evolution of Charge-Transfer Energy in Digital Nickelates Superlattices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105864. [PMID: 35603969 PMCID: PMC9313943 DOI: 10.1002/advs.202105864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2021] [Revised: 04/06/2022] [Indexed: 06/15/2023]
Abstract
Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here the dimensionality effect on the ground electronic state in high-quality (NdNiO3 ) m /(SrTiO3 )1 superlattices is systematically studied through transport and soft X-ray absorption spectroscopy. The metal-to-insulator transition temperature decreases with the thickness of the NdNiO3 slab decreasing from bulk to 7 unit cells, then increases gradually as m further reduces to 1 unit cell. Spectral evidence demonstrates that the stabilization of insulating phase can be attributed to the increase of the charge-transfer energy between O 2p and Ni 3d bands. The prominent multiplet feature on the Ni L3 edge develops with the decrease of NdNiO3 slab thickness, suggesting the strengthening of the charge disproportionate state under the dimensional confinement. This work provides convincing evidence that dimensionality is an effective knob to modulate the charge-transfer energy and thus the collective ground state in nickelates.
Collapse
Affiliation(s)
- Xiangle Lu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Jishan Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Nian Zhang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Binping Xie
- Feimion Instruments (Shanghai) Company LimitedShanghai201906China
| | - Shuai Yang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Wanling Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhicheng Jiang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhe Huang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Yichen Yang
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Jin Miao
- State Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai200433China
| | - Wei Li
- State Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai200433China
| | - Soohyun Cho
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhengtai Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Zhonghao Liu
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| | - Dawei Shen
- State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
- Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100049China
| |
Collapse
|
9
|
Nelson JN, Schreiber NJ, Georgescu AB, Goodge BH, Faeth BD, Parzyck CT, Zeledon C, Kourkoutis LF, Millis AJ, Georges A, Schlom DG, Shen KM. Interfacial charge transfer and persistent metallicity of ultrathin SrIrO 3/SrRuO 3 heterostructures. SCIENCE ADVANCES 2022; 8:eabj0481. [PMID: 35119924 PMCID: PMC8816341 DOI: 10.1126/sciadv.abj0481] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2021] [Accepted: 12/13/2021] [Indexed: 05/28/2023]
Abstract
Interface quantum materials have yielded a plethora of previously unknown phenomena, including unconventional superconductivity, topological phases, and possible Majorana fermions. Typically, such states are detected at the interface between two insulating constituents by electrical transport, but whether either material is conducting, transport techniques become insensitive to interfacial properties. To overcome these limitations, we use angle-resolved photoemission spectroscopy and molecular beam epitaxy to reveal the electronic structure, charge transfer, doping profile, and carrier effective masses in a layer-by-layer fashion for the interface between the Dirac nodal-line semimetal SrIrO3 and the correlated metallic Weyl ferromagnet SrRuO3. We find that electrons are transferred from the SrIrO3 to SrRuO3, with an estimated screening length of λ = 3.2 ± 0.1 Å. In addition, we find that metallicity is preserved even down to a single SrIrO3 layer, where the dimensionality-driven metal-insulator transition typically observed in SrIrO3 is avoided because of strong hybridization of the Ir and Ru t2g states.
Collapse
Affiliation(s)
- Jocienne N. Nelson
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Nathaniel J. Schreiber
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
| | - Alexandru B. Georgescu
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Berit H. Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Brendan D. Faeth
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Christopher T. Parzyck
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - Cyrus Zeledon
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
| | - Lena F. Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Andrew J. Millis
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010, USA
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Antoine Georges
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010, USA
- Collège de France, 11 place Marcelin Berthelot, 75005 Paris, France
- CPHT, CNRS, Ecole Polytechnique, IP Paris, F-91128 Palaiseau, France
- DQMP, Universitè de Genéve, 24 quai Ernest Ansermet, CH-1211 Genéve, Suisse
| | - Darrell G. Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
| | - Kyle M. Shen
- Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| |
Collapse
|
10
|
Hoglund ER, Bao DL, O'Hara A, Makarem S, Piontkowski ZT, Matson JR, Yadav AK, Haislmaier RC, Engel-Herbert R, Ihlefeld JF, Ravichandran J, Ramesh R, Caldwell JD, Beechem TE, Tomko JA, Hachtel JA, Pantelides ST, Hopkins PE, Howe JM. Emergent interface vibrational structure of oxide superlattices. Nature 2022; 601:556-561. [PMID: 35082421 PMCID: PMC8791828 DOI: 10.1038/s41586-021-04238-z] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2021] [Accepted: 11/09/2021] [Indexed: 02/05/2023]
Abstract
As the length scales of materials decrease, the heterogeneities associated with interfaces become almost as important as the surrounding materials. This has led to extensive studies of emergent electronic and magnetic interface properties in superlattices1–9. However, the interfacial vibrations that affect the phonon-mediated properties, such as thermal conductivity10,11, are measured using macroscopic techniques that lack spatial resolution. Although it is accepted that intrinsic phonons change near boundaries12,13, the physical mechanisms and length scales through which interfacial effects influence materials remain unclear. Here we demonstrate the localized vibrational response of interfaces in strontium titanate–calcium titanate superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy, density functional theory calculations and ultrafast optical spectroscopy. Structurally diffuse interfaces that bridge the bounding materials are observed and this local structure creates phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. Our results provide direct visualization of the progression of the local atomic structure and interface vibrations as they come to determine the vibrational response of an entire superlattice. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behaviour. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids with emergent infrared and thermal responses. The vibrational states emerging at the interface in oxide superlattices are characterized theoretically and at atomic resolution, showing the impact of material length scales on structure and vibrational response.
Collapse
Affiliation(s)
- Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA.
| | - De-Liang Bao
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
| | - Andrew O'Hara
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
| | - Sara Makarem
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | | | - Joseph R Matson
- Department of Mechanical Engineering and Electrical Engineering, Vanderbilt University, Nashville, TN, USA
| | - Ajay K Yadav
- Department of Materials Science and Engineering, University of California Berkley, Berkley, CA, USA
| | - Ryan C Haislmaier
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.,Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany
| | - Jon F Ihlefeld
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Jayakanth Ravichandran
- Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California Berkley, Berkley, CA, USA
| | - Joshua D Caldwell
- Department of Mechanical Engineering and Electrical Engineering, Vanderbilt University, Nashville, TN, USA
| | - Thomas E Beechem
- Sandia National Laboratories, Albuquerque, NM, USA.,Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, USA.,School of Mechanical Engineering and the Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - John A Tomko
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA.
| | - Sokrates T Pantelides
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA. .,Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA.
| | - Patrick E Hopkins
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA. .,Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, USA. .,Department of Physics, University of Virginia, Charlottesville, VA, USA.
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA.
| |
Collapse
|
11
|
Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide. Nat Commun 2021; 12:7070. [PMID: 34862386 PMCID: PMC8642393 DOI: 10.1038/s41467-021-27327-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2021] [Accepted: 11/12/2021] [Indexed: 11/09/2022] Open
Abstract
The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.
Collapse
|
12
|
Mundet B, Domínguez C, Fowlie J, Gibert M, Triscone JM, Alexander DTL. Near-Atomic-Scale Mapping of Electronic Phases in Rare Earth Nickelate Superlattices. NANO LETTERS 2021; 21:2436-2443. [PMID: 33685129 PMCID: PMC7995248 DOI: 10.1021/acs.nanolett.0c04538] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 01/29/2021] [Indexed: 06/12/2023]
Abstract
Nanoscale mapping of the distinct electronic phases characterizing the metal-insulator transition displayed by most of the rare-earth nickelate compounds is fundamental for discovering the true nature of this transition and the possible couplings that are established at the interfaces of nickelate-based heterostructures. Here, we demonstrate that this can be accomplished by using scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. By tracking how the O K and Ni L edge fine structures evolve across two different NdNiO3/SmNiO3 superlattices, displaying either one or two metal-insulator transitions depending on the individual layer thickness, we are able to determine the electronic state of each of the individual constituent materials. We further map the spatial configuration associated with their metallic/insulating regions, reaching unit cell spatial resolution. With this, we estimate the width of the metallic/insulating boundaries at the NdNiO3/SmNiO3 interfaces, which is measured to be on the order of four unit cells.
Collapse
Affiliation(s)
- Bernat Mundet
- Department
of Quantum Matter Physics, University of
Geneva, 1211 Geneva, Switzerland
- Electron
Spectrometry and Microscopy Laboratory (LSME), Institute of Physics
(IPHYS), École Polytechnique Fédérale
de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Claribel Domínguez
- Department
of Quantum Matter Physics, University of
Geneva, 1211 Geneva, Switzerland
| | - Jennifer Fowlie
- Department
of Quantum Matter Physics, University of
Geneva, 1211 Geneva, Switzerland
| | - Marta Gibert
- Physik-Institut, University of Zurich, 8057 Zurich, Switzerland
| | - Jean-Marc Triscone
- Department
of Quantum Matter Physics, University of
Geneva, 1211 Geneva, Switzerland
| | - Duncan T. L. Alexander
- Electron
Spectrometry and Microscopy Laboratory (LSME), Institute of Physics
(IPHYS), École Polytechnique Fédérale
de Lausanne (EPFL), 1015 Lausanne, Switzerland
| |
Collapse
|