1
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Sharma V, Negusse E, Kumar R, Budhani RC. Ferromagnetic resonance measurement with frequency modulation down to 2 K. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:063902. [PMID: 38836719 DOI: 10.1063/5.0190105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Accepted: 05/20/2024] [Indexed: 06/06/2024]
Abstract
Ferromagnetic resonance (FMR) spectroscopy is a powerful technique to study the precessional dynamics of magnetization in thin film heterostructures. It provides valuable information about the mechanisms of exchange bias, spin angular momentum transfer across interfaces, and excitation of magnons. A key desirable feature of FMR spectrometers is the capability to study magnetization dynamics over a wide phase space of temperature (T), frequency (f), and magnetic field (B). The design, fabrication, and testing of such a spectrometer, which uses frequency modulation techniques for improved detection of microwave absorption, reduces heat load in the cryostat and allows simultaneous measurements of inverse spin Hall effect (ISHE) induced dc voltages, is described in this paper. The apparatus is based on a 2-port transmitted microwave signal measurement using a grounded co-planar waveguide. The input radio frequency (RF) signal, frequency modulated at a tunable f-band, excites spin precession in the sample, and the attenuated RF signal is measured phase sensitively. The sample stage, inserted in the bore of a superconducting solenoid, allows magnetic field and temperature variability of 0 to ±5 T and 2-310 K, respectively. We demonstrate the working of this Cryo-FMR and ISHE spectrometer on thin films of Ni80Fe20 and Fe60Co20B20 over a wide T, B, and f phase space.
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Affiliation(s)
- Vinay Sharma
- Department of Physics, Morgan State University, Baltimore, Maryland 21251, USA
| | - Ezana Negusse
- Department of Physics, Morgan State University, Baltimore, Maryland 21251, USA
| | - Ravinder Kumar
- Department of Physics, Morgan State University, Baltimore, Maryland 21251, USA
| | - Ramesh C Budhani
- Department of Physics, Morgan State University, Baltimore, Maryland 21251, USA
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2
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Yang D, Kim T, Lee K, Xu C, Liu Y, Wang F, Zhao S, Kumar D, Yang H. Spin-orbit torque manipulation of sub-terahertz magnons in antiferromagnetic α-Fe 2O 3. Nat Commun 2024; 15:4046. [PMID: 38744961 PMCID: PMC11094109 DOI: 10.1038/s41467-024-48431-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 05/01/2024] [Indexed: 05/16/2024] Open
Abstract
The ability to electrically manipulate antiferromagnetic magnons, essential for extending the operating speed of spintronic devices into the terahertz regime, remains a major challenge. This is because antiferromagnetic magnetism is challenging to perturb using traditional methods such as magnetic fields. Recent developments in spin-orbit torques have opened a possibility of accessing antiferromagnetic magnetic order parameters and controlling terahertz magnons, which has not been experimentally realised yet. Here, we demonstrate the electrical manipulation of sub-terahertz magnons in the α-Fe2O3/Pt antiferromagnetic heterostructure. By applying the spin-orbit torques in the heterostructure, we can modify the magnon dispersion and decrease the magnon frequency in α-Fe2O3, as detected by time-resolved magneto-optical techniques. We have found that optimal tuning occurs when the Néel vector is perpendicular to the injected spin polarisation. Our results represent a significant step towards the development of electrically tunable terahertz spintronic devices.
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Affiliation(s)
- Dongsheng Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Taeheon Kim
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Electro-Medical Device Research Centre, Korea Electrotechnology Research Institute, Ansan, Republic of Korea
| | - Kyusup Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Chang Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Yakun Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Fei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Shishun Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Dushyant Kumar
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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3
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Chen H, Liu L, Zhou X, Meng Z, Wang X, Duan Z, Zhao G, Yan H, Qin P, Liu Z. Emerging Antiferromagnets for Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310379. [PMID: 38183310 DOI: 10.1002/adma.202310379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.
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Affiliation(s)
- Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiyuan Duan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Guojian Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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4
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Masuda H, Seki T, Ohe JI, Nii Y, Masuda H, Takanashi K, Onose Y. Room temperature chirality switching and detection in a helimagnetic MnAu 2 thin film. Nat Commun 2024; 15:1999. [PMID: 38453940 PMCID: PMC10920692 DOI: 10.1038/s41467-024-46326-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 02/22/2024] [Indexed: 03/09/2024] Open
Abstract
Helimagnetic structures, in which the magnetic moments are spirally ordered, host an internal degree of freedom called chirality corresponding to the handedness of the helix. The chirality seems quite robust against disturbances and is therefore promising for next-generation magnetic memory. While the chirality control was recently achieved by the magnetic field sweep with the application of an electric current at low temperature in a conducting helimagnet, problems such as low working temperature and cumbersome control and detection methods have to be solved in practical applications. Here we show chirality switching by electric current pulses at room temperature in a thin-film MnAu2 helimagnetic conductor. Moreover, we have succeeded in detecting the chirality at zero magnetic fields by means of simple transverse resistance measurement utilizing the spin Berry phase in a bilayer device composed of MnAu2 and a spin Hall material Pt. These results may pave the way to helimagnet-based spintronics.
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Affiliation(s)
- Hidetoshi Masuda
- Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Takeshi Seki
- Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Jun-Ichiro Ohe
- Department of Physics, Toho University, Funabashi, Japan
| | - Yoichi Nii
- Institute for Materials Research, Tohoku University, Sendai, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi, Japan
| | - Hiroto Masuda
- Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Koki Takanashi
- Institute for Materials Research, Tohoku University, Sendai, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Ibaraki, Japan
| | - Yoshinori Onose
- Institute for Materials Research, Tohoku University, Sendai, Japan.
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5
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Han L, Fu X, Peng R, Cheng X, Dai J, Liu L, Li Y, Zhang Y, Zhu W, Bai H, Zhou Y, Liang S, Chen C, Wang Q, Chen X, Yang L, Zhang Y, Song C, Liu J, Pan F. Electrical 180° switching of Néel vector in spin-splitting antiferromagnet. SCIENCE ADVANCES 2024; 10:eadn0479. [PMID: 38277463 PMCID: PMC10816707 DOI: 10.1126/sciadv.adn0479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Accepted: 12/26/2023] [Indexed: 01/28/2024]
Abstract
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1." However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet Mn5Si3. Such a 180° switching is read out by the Néel vector-induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
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Affiliation(s)
- Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xizhi Fu
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Rui Peng
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Xingkai Cheng
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Jiankun Dai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Liangyang Liu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yidian Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yichi Zhang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Shixuan Liang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xianzhe Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Luyi Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Yang Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, USA
- Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996, USA
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Junwei Liu
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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6
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Zheng Z, Zeng T, Zhao T, Shi S, Ren L, Zhang T, Jia L, Gu Y, Xiao R, Zhou H, Zhang Q, Lu J, Wang G, Zhao C, Li H, Tay BK, Chen J. Effective electrical manipulation of a topological antiferromagnet by orbital torques. Nat Commun 2024; 15:745. [PMID: 38272914 PMCID: PMC10811228 DOI: 10.1038/s41467-024-45109-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Accepted: 01/09/2024] [Indexed: 01/27/2024] Open
Abstract
The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn3Sn using orbital torques originating from either metal Mn or oxide CuOx. Although Mn3Sn can convert orbital current to spin current on its own, we find that inserting a heavy metal layer, such as Pt, of appropriate thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behaviour of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity-which may be beneficial for constructing accurate artificial neural networks. Our work paves a way for manipulating the topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.
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Affiliation(s)
- Zhenyi Zheng
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tongtong Zhang
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Youdi Gu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Rui Xiao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Hengan Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qihan Zhang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jiaqi Lu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Guilei Wang
- Beijing Superstring Academy of Memory Technology, Beijing, 100176, China
| | - Chao Zhao
- Beijing Superstring Academy of Memory Technology, Beijing, 100176, China
| | - Huihui Li
- Beijing Superstring Academy of Memory Technology, Beijing, 100176, China.
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
- Chongqing Research Institute, National University of Singapore, Chongqing, 401120, China.
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7
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Zhou Y, Guo T, Han L, Liao L, He W, Wan C, Chen C, Wang Q, Qiao L, Bai H, Zhu W, Zhang Y, Chen R, Han X, Pan F, Song C. Spin-torque-driven antiferromagnetic resonance. SCIENCE ADVANCES 2024; 10:eadk7935. [PMID: 38215195 PMCID: PMC10786412 DOI: 10.1126/sciadv.adk7935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Accepted: 12/14/2023] [Indexed: 01/14/2024]
Abstract
The intrinsic fast dynamics make antiferromagnetic spintronics a promising avenue for faster data processing. Ultrafast antiferromagnetic resonance-generated spin current provides valuable access to antiferromagnetic spin dynamics. However, the inverse effect, spin-torque-driven antiferromagnetic resonance (ST-AFMR), which is attractive for practical utilization of fast devices but seriously impeded by difficulties in controlling and detecting Néel vectors, remains elusive. We observe ST-AFMR in Y3Fe5O12/α-Fe2O3/Pt at room temperature. The Néel vector oscillates and contributes to voltage signal owing to antiferromagnetic negative spin Hall magnetoresistance-induced spin rectification effect, which has the opposite sign to ferromagnets. The Néel vector in antiferromagnetic α-Fe2O3 is strongly coupled to the magnetization in Y3Fe5O12 buffer, resulting in the convenient control of Néel vectors. ST-AFMR experiment is bolstered by micromagnetic simulations, where both the Néel vector and the canted moment of α-Fe2O3 are in elliptic resonance. These findings shed light on the spin current-induced dynamics in antiferromagnets and represent a step toward electrically controlled antiferromagnetic terahertz emitters.
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Affiliation(s)
- Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Tingwen Guo
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
- LSI, CEA/DRF/IRAMIS, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, F-91128 Palaiseau, France
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Liyang Liao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Leilei Qiao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Hua Bai
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Wenxuan Zhu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Yichi Zhang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Ruyi Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
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8
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Liu X, Zhang D, Deng Y, Jiang N, Zhang E, Shen C, Chang K, Wang K. Tunable Spin Textures in a Kagome Antiferromagnetic Semimetal via Symmetry Design. ACS NANO 2024; 18:1013-1021. [PMID: 38147457 DOI: 10.1021/acsnano.3c10187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Kagome antiferromagnetic semimetals such as Mn3Sn have attracted extensive attention for their potential application in antiferromagnetic spintronics. Realizing high manipulation of kagome antiferromagnetic spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable spin textures of Mn3Sn through symmetry design by controlling alternate Mn3Sn and heavy-metal Pt thicknesses. The various topological spin textures were predicted with theoretical simulations, and the skyrmion-induced topological Hall effect, strong spin-dependent scattering, and vertical gradient of spin states were obtained by magnetotransport and magnetic circular dichroism (MCD) spectroscopy measurements in Mn3Sn/Pt heterostructures. Our work provides an effective strategy for the innovative design of topological antiferromagnetic spintronic devices.
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Affiliation(s)
- Xionghua Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongcheng Deng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Nai Jiang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Enze Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kai Chang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Science, Beijing 100049, China
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9
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Xie H, Zhang N, Ma Y, Chen X, Ke L, Wu Y. Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium. NANO LETTERS 2023; 23:10274-10281. [PMID: 37909311 DOI: 10.1021/acs.nanolett.3c02797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Recently, orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of the antiferromagnetic state in Mn3Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal-based heterostructures. However, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures, is much less efficient than the Pt-based equivalents, as manifested in the 1 order of magnitude smaller terahertz emission intensity and spin current-induced magnetoresistance. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ∼11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as efficient orbital/spin current sources for antiferromagnetic spintronics.
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Affiliation(s)
- Hang Xie
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Nan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Yuteng Ma
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- National University of Singapore (Chong Qing) Research Institute, Chongqing Liang Jiang New Area, Chongqing 401123, China
| | - Xin Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Lin Ke
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore
| | - Yihong Wu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- National University of Singapore (Chong Qing) Research Institute, Chongqing Liang Jiang New Area, Chongqing 401123, China
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10
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Yoon JY, Zhang P, Chou CT, Takeuchi Y, Uchimura T, Hou JT, Han J, Kanai S, Ohno H, Fukami S, Liu L. Handedness anomaly in a non-collinear antiferromagnet under spin-orbit torque. NATURE MATERIALS 2023; 22:1106-1113. [PMID: 37537356 DOI: 10.1038/s41563-023-01620-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Accepted: 06/23/2023] [Indexed: 08/05/2023]
Abstract
Non-collinear antiferromagnets are an emerging family of spintronic materials because they not only possess the general advantages of antiferromagnets but also enable more advanced functionalities. Recently, in an intriguing non-collinear antiferromagnet Mn3Sn, where the octupole moment is defined as the collective magnetic order parameter, spin-orbit torque (SOT) switching has been achieved in seemingly the same protocol as in ferromagnets. Nevertheless, it is fundamentally important to explore the unknown octupole moment dynamics and contrast it with the magnetization vector of ferromagnets. Here we report a handedness anomaly in the SOT-driven dynamics of Mn3Sn: when spin current is injected, the octupole moment rotates in the opposite direction to the individual moments, leading to a SOT switching polarity distinct from ferromagnets. By using second-harmonic and d.c. magnetometry, we track the SOT effect onto the octupole moment during its rotation and reveal that the handedness anomaly stems from the interactions between the injected spin and the unique chiral-spin structure of Mn3Sn. We further establish the torque balancing equation of the magnetic octupole moment and quantify the SOT efficiency. Our finding provides a guideline for understanding and implementing the electrical manipulation of non-collinear antiferromagnets, which in nature differs from the well-established collinear magnets.
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Affiliation(s)
- Ju-Young Yoon
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
- Graduate School of Engineering, Tohoku University, Sendai, Japan
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Pengxiang Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chung-Tao Chou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yutaro Takeuchi
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Tomohiro Uchimura
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
- Graduate School of Engineering, Tohoku University, Sendai, Japan
| | - Justin T Hou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jiahao Han
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
| | - Shun Kanai
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
- Graduate School of Engineering, Tohoku University, Sendai, Japan
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
- Division for the Establishment of Frontier Sciences of Organization for Advanced Studies, Tohoku University, Sendai, Japan
| | - Hideo Ohno
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
- Graduate School of Engineering, Tohoku University, Sendai, Japan
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
- Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan
| | - Shunsuke Fukami
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
- Graduate School of Engineering, Tohoku University, Sendai, Japan.
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan.
- Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan.
- Inamori Research Institute for Science, Kyoto, Japan.
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
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11
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Xue F, Lin SJ, Song M, Hwang W, Klewe C, Lee CM, Turgut E, Shafer P, Vailionis A, Huang YL, Tsai W, Bao X, Wang SX. Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co] N. Nat Commun 2023; 14:3932. [PMID: 37402728 DOI: 10.1038/s41467-023-39649-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 06/22/2023] [Indexed: 07/06/2023] Open
Abstract
Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co]N, which are either highly textured on single crystalline MgO substrates or randomly textured on SiO2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to -0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.
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Affiliation(s)
- Fen Xue
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
| | - Shy-Jay Lin
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Mingyuan Song
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - William Hwang
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Chien-Min Lee
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Emrah Turgut
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Arturas Vailionis
- Stanford Nano Shared Facilities, Stanford University, Stanford, CA, 94305, USA
- Department of Physics, Kaunas University of Technology, LT-51368, Kaunas, Lithuania
| | - Yen-Lin Huang
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Wilman Tsai
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Xinyu Bao
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Shan X Wang
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
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12
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Han J, Cheng R, Liu L, Ohno H, Fukami S. Coherent antiferromagnetic spintronics. NATURE MATERIALS 2023; 22:684-695. [PMID: 36941390 DOI: 10.1038/s41563-023-01492-6] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Accepted: 01/25/2023] [Indexed: 06/03/2023]
Abstract
Antiferromagnets have attracted extensive interest as a material platform in spintronics. So far, antiferromagnet-enabled spin-orbitronics, spin-transfer electronics and spin caloritronics have formed the bases of antiferromagnetic spintronics. Spin transport and manipulation based on coherent antiferromagnetic dynamics have recently emerged, pushing the developing field of antiferromagnetic spintronics towards a new stage distinguished by the features of spin coherence. In this Review, we categorize and analyse the critical effects that harness the coherence of antiferromagnets for spintronic applications, including spin pumping from monochromatic antiferromagnetic magnons, spin transmission via phase-correlated antiferromagnetic magnons, electrically induced spin rotation and ultrafast spin-orbit effects in antiferromagnets. We also discuss future opportunities in research and applications stimulated by the principles, materials and phenomena of coherent antiferromagnetic spintronics.
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Affiliation(s)
- Jiahao Han
- Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
| | - Ran Cheng
- Department of Electrical and Computer Engineering, University of California Riverside, Riverside, CA, USA
- Department of Physics and Astronomy, University of California Riverside, Riverside, CA, USA
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hideo Ohno
- Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
- Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Shunsuke Fukami
- Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan.
- Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai, Japan.
- WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
- Inamori Research Institute of Science, Kyoto, Japan.
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13
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Ren L, Liu L, Song X, Zhao T, Xing X, Feng YP, Chen J, Teo KL. Manipulation of the Topological Ferromagnetic State in a Weyl Semimetal by Spin-Orbit Torque. NANO LETTERS 2023; 23:3394-3400. [PMID: 37043331 DOI: 10.1021/acs.nanolett.3c00410] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Magnetic Weyl semimetals (MWSMs) exhibit unconventional transport phenomena, such as large anomalous Hall (and Nernst) effects, which are absent in spatial inversion asymmetry WSMs. Compared with its nonmagnetic counterpart, the magnetic state of a MWSM provides an alternative way for the modulation of topology. Spin-orbit torque (SOT), as an effective means of electrically controlling the magnetic states of ferromagnets, may be used to manipulate the topological magnetic states of MWSMs. Here we confirm the MWSM state of high-quality Co2MnGa film by systematically investigating the transport measurements and demonstrating that the magnetization and topology of Co2MnGa can be electrically manipulated. The electrical and magnetic optical measurements further reveal that the current-induced SOT switches the topological magnetic state in a 180-degree manner by applying positive/negative current pulses and in a 90-degree manner by alternately applying two orthogonal current pulses. This work opens up more opportunities for spintronic applications based on topological materials.
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Affiliation(s)
- Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
| | - Liang Liu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Xiaohe Song
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, 119077, Singapore
- Department of Physics, National University of Singapore, 117551, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Xiangjun Xing
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 117551, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Kie Leong Teo
- Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore
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14
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Li B, Zhang H, Tao Q, Shen X, Huang Z, He K, Yi C, Li X, Zhang L, Zhang Z, Liu J, Tang J, Zhou Y, Wang D, Yang X, Zhao B, Wu R, Li J, Li B, Duan X. Thickness-Dependent Topological Hall Effect in 2D Cr 5 Si 3 Nanosheets with Noncollinear Magnetic Phase. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210755. [PMID: 36719342 DOI: 10.1002/adma.202210755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2022] [Revised: 01/05/2023] [Indexed: 06/18/2023]
Abstract
Antiferromagnets with noncollinear spin order are expected to exhibit unconventional electromagnetic response, such as spin Hall effects, chiral abnormal, quantum Hall effect, and topological Hall effect. Here, 2D thickness-controlled and high-quality Cr5 Si3 nanosheets that are compatible with the complementary metal-oxide-semiconductor technology are synthesized by chemical vapor deposition method. The angular dependence of electromagnetic transport properties of Cr5 Si3 nanosheets is investigated using a physical property measurement system, and an obvious topological Hall effect (THE) appears at a large tilted magnetic field, which results from the noncollinear magnetic structure of the Cr5 Si3 nanosheet. The Cr5 Si3 nanosheets exhibit distinct thickness-dependent perpendicular magnetic anisotropy (PMA), and the THE only emerges in the specific thickness range with moderate PMA. This work provides opportunities for exploring fundamental spin-related physical mechanisms of noncollinear antiferromagnet in ultrathin limit.
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Affiliation(s)
- Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Quanyang Tao
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Kun He
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
| | - Chen Yi
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
| | - Xu Li
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Zucheng Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jingmei Tang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yucheng Zhou
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing, 211189, P. R. China
| | - Ruixia Wu
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Bo Li
- Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
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15
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Wang X, Zhou X, Yan H, Qin P, Chen H, Meng Z, Feng Z, Liu L, Liu Z. Topological Hall Effect in Thin Films of an Antiferromagnetic Weyl Semimetal Integrated on Si. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7572-7577. [PMID: 36700918 DOI: 10.1021/acsami.2c20644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Since the large room-temperature anomalous Hall effect was discovered in noncollinear antiferromagnets, Mn3Sn has received immense research interest as it exhibits abundant exotic physical properties including Weyl points and enormous potential for antiferromagnetic spintronic device applications. In this work, we report the emergence of the topological Hall effect in Mn3Sn films grown on Si that is the workhorse for the modern highly integrated information technology. Importantly, through a series of systematic comparative experiments, the intriguing topological Hall effect phenomenon related to the appearance of the noncoplanar chiral spin structure is found to be induced by the Mn3Sn/SiO2 interface. Furthermore, it was found that the current injection to a Pt/Mn3Sn bilayer Hall bar device can effectively manipulate the chiral spin structure of Mn3Sn, which demonstrates the feasibility of Si-based noncollinear antiferromagnetic spintronics.
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Affiliation(s)
- Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
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16
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Deng Y, Liu X, Chen Y, Du Z, Jiang N, Shen C, Zhang E, Zheng H, Lu HZ, Wang K. All-electrical switching of a topological non-collinear antiferromagnet at room temperature. Natl Sci Rev 2023; 10:nwac154. [PMID: 36872930 PMCID: PMC9977383 DOI: 10.1093/nsr/nwac154] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 07/31/2022] [Indexed: 11/14/2022] Open
Abstract
Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 106 A·cm-2, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn, with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.
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Affiliation(s)
- Yongcheng Deng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xionghua Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yiyuan Chen
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.,International Quantum Academy, Shenzhen 518048, China
| | - Zongzheng Du
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.,International Quantum Academy, Shenzhen 518048, China
| | - Nai Jiang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Enze Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Houzhi Zheng
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hai-Zhou Lu
- Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.,International Quantum Academy, Shenzhen 518048, China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.,Beijing Academy of Quantum Information Sciences, Beijing 100193, China.,Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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17
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Chen X, Higo T, Tanaka K, Nomoto T, Tsai H, Idzuchi H, Shiga M, Sakamoto S, Ando R, Kosaki H, Matsuo T, Nishio-Hamane D, Arita R, Miwa S, Nakatsuji S. Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction. Nature 2023; 613:490-495. [PMID: 36653566 PMCID: PMC9849134 DOI: 10.1038/s41586-022-05463-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 10/19/2022] [Indexed: 01/19/2023]
Abstract
The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface1 and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn3Sn/MgO/Mn3Sn (ref. 6). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn3Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet7 can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets8-10.
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Affiliation(s)
- Xianzhe Chen
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Tomoya Higo
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan.,CREST, Japan Science and Technology Agency, Saitama, Japan
| | - Katsuhiro Tanaka
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan.,PRESTO, Japan Science and Technology Agency, Saitama, Japan
| | - Hanshen Tsai
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Hiroshi Idzuchi
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Masanobu Shiga
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Shoya Sakamoto
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Ryoya Ando
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Hidetoshi Kosaki
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Takumi Matsuo
- Department of Physics, University of Tokyo, Tokyo, Japan
| | | | - Ryotaro Arita
- CREST, Japan Science and Technology Agency, Saitama, Japan.,Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan.,RIKEN, Center for Emergent Matter Science, Saitama, Japan
| | - Shinji Miwa
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan.,CREST, Japan Science and Technology Agency, Saitama, Japan.,Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan
| | - Satoru Nakatsuji
- Department of Physics, University of Tokyo, Tokyo, Japan. .,Institute for Solid State Physics, University of Tokyo, Chiba, Japan. .,CREST, Japan Science and Technology Agency, Saitama, Japan. .,Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan. .,Canadian Institute for Advanced Research, Toronto, Ontario, Canada.
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18
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Li F, Guan Y, Wang P, Wang Z, Fang C, Gu K, Parkin SSP. All-electrical reading and writing of spin chirality. SCIENCE ADVANCES 2022; 8:eadd6984. [PMID: 36516254 DOI: 10.1126/sciadv.add6984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Spintronics promises potential data encoding and computing technologies. Spin chirality plays a very important role in the properties of many topological and noncollinear magnetic materials. Here, we propose the all-electrical detection and manipulation of spin chirality in insulating chiral antiferromagnets. We demonstrate that the spin chirality in insulating epitaxial films of TbMnO3 can be read electrically via the spin Seebeck effect and can be switched by electric fields via the multiferroic coupling of the spin chirality to the ferroelectric polarization. Moreover, multivalued states of the spin chirality can be realized by the combined application of electric and magnetic fields. Our results are a path toward next-generation, low-energy consumption memory and logic devices that rely on spin chirality.
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Affiliation(s)
- Fan Li
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Yicheng Guan
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Peng Wang
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Zhong Wang
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Chi Fang
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Ke Gu
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Stuart S P Parkin
- NISE Department, Max Planck Institute of Microstructure Physics, Halle, Germany
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19
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Xie H, Chen X, Zhang Q, Mu Z, Zhang X, Yan B, Wu Y. Magnetization switching in polycrystalline Mn 3Sn thin film induced by self-generated spin-polarized current. Nat Commun 2022; 13:5744. [PMID: 36180425 PMCID: PMC9525633 DOI: 10.1038/s41467-022-33345-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2021] [Accepted: 09/13/2022] [Indexed: 11/13/2022] Open
Abstract
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn3Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn3Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn3Sn and Ti/Mn3Sn bilayers, where external injection of spin Hall current to Mn3Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure. Under an applied current, chiral antiferromagnets, such as Mn3Sn, can produce a spin-polarized current. Here, by varying the thickness of a buffering layer, the authors show that this spin-polarized current can drive self-induced switching in polycrystalline Mn3Sn.
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Affiliation(s)
- Hang Xie
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Xin Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Qi Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Rd. 1088, Shenzhen, 518055, China
| | - Zhiqiang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xinhai Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Rd. 1088, Shenzhen, 518055, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel.
| | - Yihong Wu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
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20
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Go D, Sallermann M, Lux FR, Blügel S, Gomonay O, Mokrousov Y. Noncollinear Spin Current for Switching of Chiral Magnetic Textures. PHYSICAL REVIEW LETTERS 2022; 129:097204. [PMID: 36083678 DOI: 10.1103/physrevlett.129.097204] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Revised: 06/10/2022] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
We propose a concept of noncollinear spin current, whose spin polarization varies in space even in nonmagnetic crystals. While it is commonly assumed that the spin polarization of the spin Hall current is uniform, asymmetric local crystal potential generally allows the spin polarization to be noncollinear in space. Based on microscopic considerations, we demonstrate that such noncollinear spin Hall currents can be observed, for example, in layered Kagome Mn_{3}X (X=Ge, Sn) compounds. Moreover, by referring to atomistic spin dynamics simulations we show that noncollinear spin currents can be used to switch the chiral spin texture of Mn_{3}X in a deterministic way even in the absence of an external magnetic field. Our theoretical prediction can be readily tested in experiments, which will open a novel route toward electric control of complex spin structures in noncollinear antiferromagnets.
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Affiliation(s)
- Dongwook Go
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Moritz Sallermann
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Science Institute and Faculty of Physical Sciences, University of Iceland, VR-III, 107 Reykjavík, Iceland
| | - Fabian R Lux
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Stefan Blügel
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
| | - Olena Gomonay
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Yuriy Mokrousov
- Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
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21
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Zhang P, Chou CT, Yun H, McGoldrick BC, Hou JT, Mkhoyan KA, Liu L. Control of Néel Vector with Spin-Orbit Torques in an Antiferromagnetic Insulator with Tilted Easy Plane. PHYSICAL REVIEW LETTERS 2022; 129:017203. [PMID: 35841567 DOI: 10.1103/physrevlett.129.017203] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Revised: 04/29/2022] [Accepted: 06/02/2022] [Indexed: 05/27/2023]
Abstract
Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque switching represents a challenging topic. Because of the diminishing magnetic susceptibility, current-induced antiferromagnetic dynamics remain poorly characterized, complicated by spurious effects. Here, by growing a thin film antiferromagnet, α-Fe_{2}O_{3}, along its nonbasal plane orientation, we realize a configuration where the spin-orbit torque from an injected spin current can unambiguously rotate and switch the Néel vector within the tilted easy plane, with an efficiency comparable to that of classical ferrimagnetic insulators. Our study introduces a new platform for quantitatively characterizing switching and oscillation dynamics in antiferromagnets.
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Affiliation(s)
- Pengxiang Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Chung-Tao Chou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Hwanhui Yun
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Brooke C McGoldrick
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Justin T Hou
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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22
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Perpendicular full switching of chiral antiferromagnetic order by current. Nature 2022; 607:474-479. [PMID: 35859198 DOI: 10.1038/s41586-022-04864-1] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 05/12/2022] [Indexed: 11/09/2022]
Abstract
Electrical control of a magnetic state of matter lays the foundation for information technologies and for understanding of spintronic phenomena. Spin-orbit torque provides an efficient mechanism for the electrical manipulation of magnetic orders1-11. In particular, spin-orbit torque switching of perpendicular magnetization in nanoscale ferromagnetic bits has enabled the development of stable, reliable and low-power memories and computation12-14. Likewise, for antiferromagnetic spintronics, electrical bidirectional switching of an antiferromagnetic order in a perpendicular geometry may have huge impacts, given its potential advantage for high-density integration and ultrafast operation15,16. Here we report the experimental realization of perpendicular and full spin-orbit torque switching of an antiferromagnetic binary state. We use the chiral antiferromagnet Mn3Sn (ref. 17), which exhibits the magnetization-free anomalous Hall effect owing to a ferroic order of a cluster magnetic octupole hosted in its chiral antiferromagnetic state18. We fabricate heavy-metal/Mn3Sn heterostructures by molecular beam epitaxy and introduce perpendicular magnetic anisotropy of the octupole using an epitaxial in-plane tensile strain. By using the anomalous Hall effect as the readout, we demonstrate 100 per cent switching of the perpendicular octupole polarization in a 30-nanometre-thick Mn3Sn film with a small critical current density of less than 15 megaamperes per square centimetre. Our theory reveals that the perpendicular geometry between the polarization directions of current-induced spin accumulation and of the octupole persistently maximizes the spin-orbit torque efficiency during the deterministic bidirectional switching process. Our work provides a significant basis for antiferromagnetic spintronics.
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Zhou Y, Guo T, Qiao L, Wang Q, Zhu M, Zhang J, Liu Q, Zhao M, Wan C, He W, Bai H, Han L, Huang L, Chen R, Zhao Y, Han X, Pan F, Song C. Piezoelectric Strain-Controlled Magnon Spin Current Transport in an Antiferromagnet. NANO LETTERS 2022; 22:4646-4653. [PMID: 35583209 DOI: 10.1021/acs.nanolett.2c00405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As the core of spintronics, the transport of spin aims at a low-dissipation data process. The pure spin current transmission carried by magnons in antiferromagnetic insulators is natively endowed with superiority such as long-distance propagation and ultrafast speed. However, the traditional control of magnon transport in an antiferromagnet via a magnetic field or temperature variation adds critical inconvenience to practical applications. Controlling magnon transport by electric methods is a promising way to overcome such embarrassment and to promote the development of energy-efficient antiferromagnetic logic. Here, the experimental realization of an electric field-induced piezoelectric strain-controlled magnon spin current transmission through the antiferromagnetic insulator in the Y3Fe5O12/Cr2O3/Pt trilayer is reported. An efficient and nonvolatile manipulation of magnon propagation/blocking is achieved by changing the relative direction between the Néel vector and spin polarization, which is tuned by ferroelastic strain from the piezoelectric substrate. The piezoelectric strain-controlled antiferromagnetic magnon transport opens an avenue for the exploitation of antiferromagnet-based spin/magnon transistors with ultrahigh energy efficiency.
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Affiliation(s)
- Yongjian Zhou
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Tingwen Guo
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Leilei Qiao
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qian Wang
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Meng Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jia Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Quan Liu
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hua Bai
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lei Han
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lin Huang
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ruyi Chen
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yonggang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Feng Pan
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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24
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Pal B, Hazra BK, Göbel B, Jeon JC, Pandeya AK, Chakraborty A, Busch O, Srivastava AK, Deniz H, Taylor JM, Meyerheim H, Mertig I, Yang SH, Parkin SSP. Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque. SCIENCE ADVANCES 2022; 8:eabo5930. [PMID: 35704587 PMCID: PMC9200275 DOI: 10.1126/sciadv.abo5930] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2022] [Accepted: 04/29/2022] [Indexed: 06/03/2023]
Abstract
The current-induced spin-orbit torque switching of ferromagnets has had huge impact in spintronics. However, short spin-diffusion lengths limit the thickness of switchable ferromagnetic layers, thereby limiting their thermal stability. Here, we report a previously unobserved seeded spin-orbit torque (SSOT) by which current can set the magnetic states of even thick layers of the chiral kagome antiferromagnet Mn3Sn. The mechanism involves setting the orientation of the antiferromagnetic domains in a thin region at the interface with spin currents arising from an adjacent heavy metal while also heating the layer above its magnetic ordering temperature. This interface region seeds the resulting spin texture of the entire layer as it cools down and, thereby, overcomes the thickness limitation of conventional spin-orbit torques. SSOT switching in Mn3Sn can be extended beyond chiral antiferromagnets to diverse magnetic systems and provides a path toward the development of highly efficient, high-speed, and thermally stable spintronic devices.
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Affiliation(s)
- Banabir Pal
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Binoy K. Hazra
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Börge Göbel
- Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle, Germany
| | - Jae-Chun Jeon
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Avanindra K. Pandeya
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Anirban Chakraborty
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Oliver Busch
- Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle, Germany
| | - Abhay K. Srivastava
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Hakan Deniz
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - James M. Taylor
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Holger Meyerheim
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Ingrid Mertig
- Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle, Germany
| | - See-Hun Yang
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
| | - Stuart S. P. Parkin
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
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25
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Yan GQ, Li S, Lu H, Huang M, Xiao Y, Wernert L, Brock JA, Fullerton EE, Chen H, Wang H, Du CR. Quantum Sensing and Imaging of Spin-Orbit-Torque-Driven Spin Dynamics in the Non-Collinear Antiferromagnet Mn 3 Sn. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200327. [PMID: 35322479 DOI: 10.1002/adma.202200327] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 03/02/2022] [Indexed: 06/14/2023]
Abstract
Novel non-collinear antiferromagnets with spontaneous time-reversal symmetry breaking, non-trivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications. One of the central focuses in this emerging field is exploring the relationship between the microscopic magnetic structure and exotic material properties. Here, nanoscale imaging of both spin-orbit-torque-induced deterministic magnetic switching and chiral spin rotation in non-collinear antiferromagnet Mn3 Sn films using nitrogen-vacancy (NV) centers are reported. Direct evidence of the off-resonance dipole-dipole coupling between the spin dynamics in Mn3 Sn and proximate NV centers is also demonstrated by NV relaxometry measurements. These results demonstrate the unique capabilities of NV centers in accessing the local information of the magnetic order and dynamics in these emergent quantum materials and suggest new opportunities for investigating the interplay between topology and magnetism in a broad range of topological magnets.
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Affiliation(s)
- Gerald Q Yan
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Senlei Li
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Hanyi Lu
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Mengqi Huang
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
| | - Yuxuan Xiao
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Luke Wernert
- Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA
| | - Jeffrey A Brock
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Eric E Fullerton
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Hua Chen
- Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA
- School of Advanced Materials Discovery, Colorado State University, Fort Collins, CO, 80523, USA
| | - Hailong Wang
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
| | - Chunhui Rita Du
- Department of Physics, University of California, La Jolla, San Diego, CA, 92093, USA
- Center for Memory and Recording Research, University of California, La Jolla, San Diego, CA, 92093-0401, USA
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26
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Dong J, Li X, Gurung G, Zhu M, Zhang P, Zheng F, Tsymbal EY, Zhang J. Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions. PHYSICAL REVIEW LETTERS 2022; 128:197201. [PMID: 35622046 DOI: 10.1103/physrevlett.128.197201] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 02/18/2022] [Accepted: 04/21/2022] [Indexed: 06/15/2023]
Abstract
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that noncollinear AFM metals, such as Mn_{3}Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn_{3}Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four nonvolatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other noncollinear AFM metals like Mn_{3}Ge, Mn_{3}Ga, Mn_{3}Pt, and Mn_{3}GaN. Our work provides a robust method for detecting the Néel vector in noncollinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.
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Affiliation(s)
- Jianting Dong
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Xinlu Li
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Gautam Gurung
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
| | - Meng Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Peina Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Fanxing Zheng
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
| | - Jia Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
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27
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Xiong D, Jiang Y, Shi K, Du A, Yao Y, Guo Z, Zhu D, Cao K, Peng S, Cai W, Zhu D, Zhao W. Antiferromagnetic spintronics: An overview and outlook. FUNDAMENTAL RESEARCH 2022. [DOI: 10.1016/j.fmre.2022.03.016] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022] Open
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28
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29
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Lyalin I, Cheng S, Kawakami RK. Spin-Orbit Torque in Bilayers of Kagome Ferromagnet Fe 3Sn 2 and Pt. NANO LETTERS 2021; 21:6975-6982. [PMID: 34380320 DOI: 10.1021/acs.nanolett.1c02270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Spin-orbit torque phenomena enable efficient manipulation of the magnetization in ferromagnet/heavy metal bilayer systems for prospective magnetic memory and logic applications. Kagome magnets are of particular interest for spin-orbit torque due to the interplay of magnetic order and the nontrivial band topology (e.g., flat bands and Dirac and Weyl points). Here we demonstrate spin-orbit torque and quantify its efficiency in a bilayer system of topological kagome ferromagnet Fe3Sn2 and platinum. We use two different techniques, one based on the quasistatic magneto-optic Kerr effect (MOKE) and another based on time-resolved MOKE, to quantify spin-orbit torque. Both techniques give a consistent value of the effective spin Hall angle of the Fe3Sn2/Pt system. Our work may lead to further advances in spintronics based on topological kagome magnets.
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Affiliation(s)
- Igor Lyalin
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Shuyu Cheng
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Roland K Kawakami
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
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