Discrete Hall resistivity contribution from Néel skyrmions in multilayer nanodiscs

Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy

Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.

All-electrical skyrmionic magnetic tunnel junction

Topological whirls or 'textures' of spins such as magnetic skyrmions represent the smallest realizable emergent magnetic entities1-5. They hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing6-8. A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures9,10. Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multimodal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal-20-70% relative to uniformly magnetized states-corresponds directly to skyrmion size. The MTJ exploits complementary nucleation mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three non-volatile electrical states. Crucially, it can electrically write and delete skyrmions to both uniform states with switching energies 1,000 times lower than the state of the art. Here, the applied voltage emulates a magnetic field and, in contrast to conventional MTJs, it reshapes both the energetics and kinetics of the switching transition, enabling deterministic bidirectional switching. Our stack platform enables large readout and efficient switching, and is compatible with lateral manipulation of skyrmionic bits, providing the much-anticipated backbone for all-electrical skyrmionic device architectures9,10. Its wafer-scale realizability provides a springboard to harness chiral spin textures for multibit memory and unconventional computing8,11.

All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation

Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still be faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize the first proof-of-concept of a 9-bit skyrmion racetrack memory with all-electrical controllable functionalities implemented in the same device. The key ingredient is the generation of a tailored nonuniform distribution of magnetic anisotropy via laser irradiation in order to (i) create a well-defined skyrmion nucleation center, (ii) define the memory cells hosting the information coded as the presence/absence of skyrmions, and (iii) improve the signal-to-noise ratio of anomalous Hall resistance measurements. This work introduces a strategy to unify previous findings and predictions for the development of a generation of racetrack memories with robust control of skyrmion nucleation and position, as well as effective skyrmion electrical detection.

Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization

Magnetization switching is the most important operation in spintronic devices. In modern nonvolatile magnetic random-access memory (MRAM), it is usually realized by spin-transfer torque (STT) or spin-orbit torque (SOT). However, both STT and SOT MRAM require current to drive magnetization switching, which will cause Joule heating. Here, we report an alternative mechanism, Dzyaloshinskii-Moriya interaction (DMI) torque, that can realize magnetization switching fully controlled by voltage pulses. We find that a consequential voltage-controlled reversal of DMI chirality in multiferroics can lead to continued expansion of a skyrmion thanks to the DMI torque. Enough DMI torque will eventually make the skyrmion burst into a quasiuniform ferromagnetic state with reversed magnetization, thus realizing the switching of a perpendicular magnet. The discovery is demonstrated in two-dimensional multiferroics, CuCrP_{2}Se_{6} and CrN, using first-principles calculations and micromagnetic simulations. As an example, we applied the DMI torque for simulating leaky-integrate-fire functionality of biological neurons. Our discovery of DMI torque switching of perpendicular magnetization provides tremendous potential toward magnetic-field-free and current-free spintronic devices, and neuromorphic computing as well.

Integrated Memory Devices Based on 2D Materials

With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.

Magnetic Field Magnitudes Needed for Skyrmion Generation in a General Perpendicularly Magnetized Film

Due to its topological protection, the magnetic skyrmion has been intensively studied for both fundamental aspects and spintronics applications. However, despite recent advancements in skyrmion research, the deterministic creation of isolated skyrmions in a generic perpendicularly magnetized film is still one of the most essential and challenging techniques. Here, we present a method to create magnetic skyrmions in typical perpendicular magnetic anisotropy (PMA) films by applying a magnetic field pulse and a method to determine the magnitude of the required external magnetic fields. Furthermore, to demonstrate the usefulness of this result for future skyrmion research, we also experimentally study the PMA dependence on the minimum size of skyrmions. Although field-driven skyrmion generation is unsuitable for device application, this result can provide an easier approach for obtaining isolated skyrmions, making skyrmion-based research more accessible.

Collective skyrmion motion under the influence of an additional interfacial spin-transfer torque

Here we study the effect of an additional interfacial spin-transfer torque, as well as the well-established spin–orbit torque and bulk spin-transfer torque, on skyrmion collections—group of skyrmions dense enough that they are not isolated from one another—in ultrathin heavy metal/ferromagnetic multilayers, by comparing modelling with experimental results. Using a skyrmion collection with a range of skyrmion diameters and landscape disorder, we study the dependence of the skyrmion Hall angle on diameter and velocity, as well as the velocity as a function of diameter. We show that inclusion of the interfacial spin-transfer torque results in reduced skyrmion Hall angles, with values close to experimental results. We also show that for skyrmion collections the velocity is approximately independent of diameter, in marked contrast to the motion of isolated skyrmions, as the group of skyrmions move together at an average group velocity. Moreover, the calculated skyrmion velocities are comparable to those obtained in experiments when the interfacial spin-transfer torque is included. Our results thus show the significance of the interfacial spin-transfer torque in ultrathin magnetic multilayers, which helps to explain the low skyrmion Hall angles and velocities observed in experiment. We conclude that the interfacial spin-transfer torque should be considered in numerical modelling for reproduction of experimental results.

Spin-orbit enabled all-electrical readout of chiral spin-textures

Chirality and topology are intimately related fundamental concepts, which are heavily explored to establish spin-textures as potential magnetic bits in information technology. However, this ambition is inhibited since the electrical reading of chiral attributes is highly non-trivial with conventional current perpendicular-to-plane (CPP) sensing devices. Here we demonstrate from extensive first-principles simulations and multiple scattering expansion the emergence of the chiral spin-mixing magnetoresistance (C-XMR) enabling highly efficient all-electrical readout of the chirality and helicity of respectively one- and two-dimensional magnetic states of matter. It is linear with spin-orbit coupling in contrast to the quadratic dependence associated with the unveiled non-local spin-mixing anisotropic MR (X-AMR). Such transport effects are systematized on various non-collinear magnetic states – spin-spirals and skyrmions – and compared to the uncovered spin-orbit-independent multi-site magnetoresistances. Owing to their simple implementation in readily available reading devices, the proposed magnetoresistances offer exciting and decisive ingredients to explore with all-electrical means the rich physics of topological and chiral magnetic objects.

One challenge for encoding information in chiral spin textures is how to read the information electrically. Here, Lima Fernandes et al. show that chiral spin textures exhibit a magnetoresistance signature which could allow for efficient electric readout of the chirality and helicity.

Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions

The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable-temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect.

Previous studies of skyrmions in thin film architectures have shown widely-varying magnitudes of the topological Hall effect. Here, Raju et al. show that this variation follows a power-law behaviour driven by chiral spin fluctuations at the phase transition between isolated and lattice skyrmions.

Microwave resonances of magnetic skyrmions in thin film multilayers

Non-collinear magnets exhibit a rich array of dynamic properties at microwave frequencies. They can host nanometre-scale topological textures known as skyrmions, whose spin resonances are expected to be highly sensitive to their local magnetic environment. Here, we report a magnetic resonance study of an [Ir/Fe/Co/Pt] multilayer hosting Néel skyrmions at room temperature. Experiments reveal two distinct resonances of the skyrmion phase during in-plane ac excitation, with frequencies between 6-12 GHz. Complementary micromagnetic simulations indicate that the net magnetic dipole moment rotates counterclockwise (CCW) during both resonances. The magnon probability distribution for the lower-frequency resonance is localised within isolated skyrmions, unlike the higher-frequency mode which principally originates from areas between skyrmions. However, the properties of both modes depend sensitively on the out-of-plane dipolar coupling, which is controlled via the ferromagnetic layer spacing in our heterostructures. The gyrations of stable isolated skyrmions reported in this room temperature study encourage the development of new material platforms and applications based on skyrmion resonances. Moreover, our material architecture enables the resonance spectra to be tuned, thus extending the functionality of such applications over a broadband frequency range.

Magnetic Skyrmion Materials

Skyrmion, a concept originally proposed in particle physics half a century ago, can now find the most fertile field for its applicability, that is, the magnetic skyrmion realized in helimagnetic materials. The spin swirling vortex-like texture of the magnetic skyrmion can define the particle nature by topology; that is, all the constituent spin moments within the two-dimensional sheet wrap the sphere just one time. Such a topological nature of the magnetic skyrmion can lead to extraordinary metastability via topological protection and the driven motion with low electric-current excitation, which may promise future application to spintronics. The skyrmions in the magnetic materials frequently show up as the crystal lattice form, e.g., hexagonal lattice, but sometimes as isolated or independent particles. These skyrmions in magnets were initially found in acentric magnets, such as chiral, polar, and bilayered magnets endowed with antisymmetric spin exchange interaction, while the skyrmion host materials have been explored in a broader family of compounds including centrosymmetric magnets. This review describes the materials science and materials chemistry of magnetic skyrmions using the classification scheme of the skyrmion forming microscopic mechanisms. The emergent phenomena and functions mediated by skyrmions are described, including the generation of emergent magnetic and electric field by statics and dynamics of skrymions and the inherent magnetoelectric effect. The other important magnetic topological defects in two or three dimensions, such as biskyrmions, antiskyrmions, merons, and hedgehogs, are also reviewed in light of their interplay with the skyrmions.

Thermoelectric Signature of Individual Skyrmions

We experimentally study the thermoelectrical signature of individual skyrmions in chiral Pt/Co/Ru multilayers. Using a combination of controlled nucleation, single skyrmion annihilation, and magnetic field dependent measurements the thermoelectric signature of individual skyrmions is characterized. The observed signature is explained by the anomalous Nernst effect of the skyrmion's spin structure. Possible topological contributions to the observed thermoelectrical signature are discussed. Such thermoelectrical characterization allows for noninvasive detection and counting of skyrmions and enables fundamental studies of topological thermoelectric effects on the nanoscale.

Magnonic Bending, Phase Shifting and Interferometry in a 2D Reconfigurable Nanodisk Crystal

Strongly interacting nanomagnetic systems are pivotal across next-generation technologies including reconfigurable magnonics and neuromorphic computation. Controlling magnetization states and local coupling between neighboring nanoelements allows vast reconfigurability and a host of associated functionalities. However, existing designs typically suffer from an inability to tailor interelement coupling post-fabrication and nanoelements restricted to a pair of Ising-like magnetization states. Here, we propose a class of reconfigurable magnonic crystals incorporating nanodisks as the functional element. Ferromagnetic nanodisks are crucially bistable in macrospin and vortex states, allowing interelement coupling to be selectively activated (macrospin) or deactivated (vortex). Through microstate engineering, we leverage the distinct coupling behaviors and magnonic band structures of bistable nanodisks to achieve reprogrammable magnonic waveguiding, bending, gating, and phase-shifting across a 2D network. The potential of nanodisk-based magnonics for wave-based computation is demonstrated via an all-magnon interferometer exhibiting XNOR logic functionality. Local microstate control is achieved here via topological magnetic writing using a magnetic force microscope tip.

Theory of an electron asymmetric scattering on skyrmion textures in two-dimensional systems

We discuss in detail the electron scattering pattern on skyrmion-like magnetic textures in two-dimensional geometry. The special attention is focused on analyzing the scattering asymmetry, which is a precursor of the topological Hall effect. We present analytical results valid in the limiting regimes of strong and weak coupling, we analyze analytically the conditions when the transverse response acquires a quantized character determined by the topological charge of a magnetic texture, we also derive the numerical scheme that gives access to the exact solution of the scattering problem. We describe how the electron scattering asymmetry is modified due to an additional short-range impurity located inside a magnetic skyrmion. Based on the numerical computations we investigate the properties of the asymmetric scattering for an arbitrary magnitude of the interaction strength and the topology of a magnetic texture, we also account for the presence or absence of a scalar impurity.

Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications

The field of magnetic skyrmions has been actively investigated across a wide range of topics during the last decades. In this topical review, we mainly review and discuss key results and findings in skyrmion research since the first experimental observation of magnetic skyrmions in 2009. We particularly focus on the theoretical, computational and experimental findings and advances that are directly relevant to the spintronic applications based on magnetic skyrmions, i.e. their writing, deleting, reading and processing driven by magnetic field, electric current and thermal energy. We then review several potential applications including information storage, logic computing gates and non-conventional devices such as neuromorphic computing devices. Finally, we discuss possible future research directions on magnetic skyrmions, which also cover rich topics on other topological textures such as antiskyrmions and bimerons in antiferromagnets and frustrated magnets.

Controlled Individual Skyrmion Nucleation at Artificial Defects Formed by Ion Irradiation

Magnetic skyrmions are particle-like deformations in a magnetic texture. They have great potential as information carriers in spintronic devices because of their interesting topological properties and favorable motion under spin currents. A new method of nucleating skyrmions at nanoscale defect sites, created in a controlled manner with focused ion beam irradiation, in polycrystalline magnetic multilayer samples with an interfacial Dzyaloshinskii-Moriya interaction, is reported. This new method has three notable advantages: 1) localization of nucleation; 2) stability over a larger range of external field strengths, including stability at zero field; and 3) existence of skyrmions in material systems where, prior to defect fabrication, skyrmions were not previously obtained by field cycling. Additionally, it is observed that the size of defect nucleated skyrmions is uninfluenced by the defect itself-provided that the artificial defects are controlled to be smaller than the inherent skyrmion size. All of these characteristics are expected to be useful toward the goal of realizing a skyrmion-based spintronic device. This phenomenon is studied with a range of transmission electron microscopy techniques to probe quantitatively the magnetic behavior at the defects with applied field and correlate this with the structural impact of the defects.

Chiral Hall Effect in Noncollinear Magnets from a Cyclic Cohomology Approach

We demonstrate the emergence of an anomalous Hall effect in chiral magnetic textures which is neither proportional to the net magnetization nor to the well-known emergent magnetic field that is responsible for the topological Hall effect. Instead, it appears already at linear order in the gradients of the magnetization texture and exists for one-dimensional magnetic textures such as domain walls and spin spirals. It receives a natural interpretation in the language of Alain Connes' noncommutative geometry. We show that this chiral Hall effect resembles the familiar topological Hall effect in essential properties while its phenomenology is distinctly different. Our findings make the reinterpretation of experimental data necessary, and offer an exciting twist in engineering the electrical transport through magnetic skyrmions.

Diameter-independent skyrmion Hall angle observed in chiral magnetic multilayers

Magnetic skyrmions are topologically non-trivial nanoscale objects. Their topology, which originates in their chiral domain wall winding, governs their unique response to a motion-inducing force. When subjected to an electrical current, the chiral winding of the spin texture leads to a deflection of the skyrmion trajectory, characterised by an angle with respect to the applied force direction. This skyrmion Hall angle is predicted to be skyrmion diameter-dependent. In contrast, our experimental study finds that the skyrmion Hall angle is diameter-independent for skyrmions with diameters ranging from 35 to 825 nm. At an average velocity of 6 ± 1 ms⁻¹, the average skyrmion Hall angle was measured to be 9° ± 2°. In fact, the skyrmion dynamics is dominated by the local energy landscape such as materials defects and the local magnetic configuration.

Magnetic skyrmions are promising objects for future spintronic devices. However, a better understanding of their dynamics is required. Here, the authors show that in contrast to predictions the skyrmion Hall angle is independent of their diameter and motion is dominated by disorder and skyrmion-skyrmion interactions in the system.

Room-temperature stabilization of antiferromagnetic skyrmions in synthetic antiferromagnets

Room-temperature skyrmions in ferromagnetic films and multilayers show promise for encoding information bits in new computing technologies. Despite recent progress, ferromagnetic order generates dipolar fields that prevent ultrasmall skyrmion sizes, and allows a transverse deflection of moving skyrmions that hinders their efficient manipulation. Antiferromagnetic skyrmions shall lift these limitations. Here we demonstrate that room-temperature antiferromagnetic skyrmions can be stabilized in synthetic antiferromagnets (SAFs), in which perpendicular magnetic anisotropy, antiferromagnetic coupling and chiral order can be adjusted concurrently. Utilizing interlayer electronic coupling to an adjacent bias layer, we demonstrate that spin-spiral states obtained in a SAF with vanishing perpendicular magnetic anisotropy can be turned into isolated antiferromagnetic skyrmions. We also provide model-based estimates of skyrmion size and stability, showing that room-temperature antiferromagnetic skyrmions below 10 nm in radius can be anticipated in further optimized SAFs. Antiferromagnetic skyrmions in SAFs may thus solve major issues associated with ferromagnetic skyrmions for low-power spintronic devices.

Electrical Detection of Domain Walls and Skyrmions in Co Films Using Noncollinear Magnetoresistance

A large noncollinear magnetoresistance (NCMR) is observed for Rh/Co atomic bilayers on Ir(111) using scanning tunneling microscopy and spectroscopy. The effect is 20% at the Fermi energy and large in a broad energy range. The NCMR can be used to electrically detect nanometer-scale domain walls and skyrmions directly in the tunnel current without the need for a differential measurement. The NCMR results from changes in the density of states of noncollinear spin textures with respect to the ferromagnetic state. Density functional theory calculations reveal that they originate from spin mixing between majority d_{xz} and minority p_{z} states.

Thermoelectric microscopy of magnetic skyrmions

The magnetic skyrmion is a nanoscale topological object characterized by the winding of magnetic moments, appearing in magnetic materials with broken inversion symmetry. Because of its low current threshold for driving the skyrmion motion, they have been intensely studied toward novel storage applications by using electron-beam, X-ray, and visible light microscopies. Here, we demonstrate another imaging method for skyrmions by using spin-caloritronic phenomena, that is, the spin Seebeck and anomalous Nernst effects, as a probe of magnetic texture. We scanned a focused heating spot on a Hall-cross shaped MgO/CoFeB/Ta/W multilayer film and mapped the magnitude as well as the direction of the resultant thermoelectric current due to the spin-caloritronic phenomena. Our experimental and calculation reveal that the characteristic patterns in the thermoelectric signal distribution reflect the skyrmions’ magnetic texture. The thermoelectric microscopy will be a complementary and useful imaging technique for the development of skyrmion devices owing to the unique symmetry of the spin-caloritronic phenomena.

Deterministic Field-Free Skyrmion Nucleation at a Nanoengineered Injector Device

Magnetic skyrmions are topological solitons promising for applications as encoders for digital information. A number of different skyrmion-based memory devices have been recently proposed. In order to demonstrate a viable skyrmion-based memory device, it is necessary to reliably and reproducibly nucleate, displace, detect, and delete the magnetic skyrmions, possibly in the absence of external applied magnetic fields, which would needlessly complicate the device design. While the skyrmion displacement and detection have both been thoroughly investigated, much less attention has been dedicated to the study of the skyrmion nucleation process and its sub-nanosecond dynamics. In this study, we investigate the nucleation of magnetic skyrmions from a dedicated nanoengineered injector, demonstrating the reliable magnetic skyrmion nucleation at the remnant state. The sub-nanosecond dynamics of the skyrmion nucleation process were also investigated, allowing us to shine light on the physical processes driving the nucleation.

Effect of inter-layer spin diffusion on skyrmion motion in magnetic multilayers

It is well known that skyrmions can be driven using spin-orbit torques due to the spin-Hall effect. Here we show an additional contribution in multilayered stacks arises from vertical spin currents due to inter-layer diffusion of a spin accumulation generated at a skyrmion. This additional interfacial spin torque is similar in form to the in-plane spin transfer torque, but is significantly enhanced in ultra-thin films and acts in the opposite direction to the electron flow. The combination of this diffusive spin torque and the spin-orbit torque results in skyrmion motion which helps to explain the observation of small skyrmion Hall angles even with moderate magnetisation damping values. Further, the effect of material imperfections on threshold currents and skyrmion Hall angle is also investigated. Topographical surface roughness, as small as a single monolayer variation, is shown to be an important contributing factor in ultra-thin films, resulting in good agreement with experimental observations.

The evolution of skyrmions in Ir/Fe/Co/Pt multilayers and their topological Hall signature

The topological Hall effect (THE) is the Hall response to an emergent magnetic field, a manifestation of the skyrmion Berry-phase. As the magnitude of THE in magnetic multilayers is an open question, it is imperative to develop comprehensive understanding of skyrmions and other chiral textures, and their electrical fingerprint. Here, using Hall-transport and magnetic-imaging in a technologically viable multilayer film, we show that topological-Hall resistivity scales with the isolated-skyrmion density over a wide range of temperature and magnetic-field, confirming the impact of the skyrmion Berry-phase on electronic transport. While we establish qualitative agreement between the topological-Hall resistivity and the topological-charge density, our quantitative analysis shows much larger topological-Hall resistivity than the prevailing theory predicts for the observed skyrmion density. Our results are fundamental for the skyrmion-THE in multilayers, where interfacial interactions, multiband transport and non-adiabatic effects play an important role, and for skyrmion applications relying on THE.

Skyrmion Lattice Topological Hall Effect near Room Temperature

Magnetic skyrmions are stable nanosized spin structures that can be displaced at low electrical current densities. Because of these properties, they have been proposed as building blocks of future electronic devices with unprecedentedly high information density and low energy consumption. The electrical detection of an ordered skyrmion lattice via the Topological Hall Effect (THE) in a bulk crystal, has so far been demonstrated only at cryogenic temperatures in the MnSi family of compounds. Here, we report the observation of a skyrmion lattice Topological Hall Effect near room temperature (276 K) in a mesoscopic lamella carved from a bulk crystal of FeGe. This region coincides with the skyrmion lattice location revealed by neutron scattering. We provide clear evidence of a re-entrant helicoid magnetic phase adjacent to the skyrmion phase, and discuss the large THE amplitude (5 nΩ.cm) in view of the ordinary Hall Effect.