Large magneto-optical Kerr effect and imaging of magnetic octupole domains in an antiferromagnetic metal

The Impact of Local Strain Fields in Noncollinear Antiferromagnetic Films

Antiferromagnets hosting structural or magnetic order that breaks time reversal symmetry are of increasing interest for "beyond von Neumann" computing applications because the topology of their band structure allows for intrinsic physical properties, exploitable in integrated memory and logic function. One such group are the noncollinear antiferromagnets. Essential for domain manipulation is the existence of small net moments found routinely when the material is synthesized in thin film form and attributed to symmetry breaking caused by spin canting, either from the Dzyaloshinskii-Moriya interaction or from strain. Although the spin arrangement of these materials makes them highly sensitive to strain, there is little understanding about the influence of local strain fields caused by lattice defects on global properties, such as magnetization and anomalous Hall effect. This premise is investigated by examining noncollinear antiferromagnetic films that are either highly lattice mismatched or closely matched to their substrate. In either case, edge dislocation networks are generated and for the former case, these extend throughout the entire film thickness, creating large local strain fields. These strain fields allow for finite intrinsic magnetization in seemingly structurally relaxed films and influence the antiferromagnetic domain state and the intrinsic anomalous Hall effect.

Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets

Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnets (AFMs), we propose a layer control of MOE (L-MOE), which is created and annihilated by layer-stacking or an electric field effect. The key character of L-MOE is the sign-reversible response controlled by ferroelectric polarization, the Néel vector, or the electric field direction. Moreover, the sign-reversible L-MOE can be quantized in topologically insulating AFMs. We reveal that the switchable L-MOE originates from the combined contributions of spin-conserving and spin-flip interband transitions in spin-valley splitting AFMs, a phenomenon not observed in conventional AFMs. Our findings bridge the ancient MOE to the emergent realms of layertronics, valleytronics, and multiferroics and may hold immense potential in these fields.

Emerging Antiferromagnets for Spintronics

Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.

Magneto-optical-like effect in tight focusing of azimuthally polarized sine-Gaussian beams

Magneto-optical effects, which have been known for over a century, are among the most fundamental phenomena in physics and describe changes in the polarization state of light when it interacts with magnetic materials. When a polarized plane wave propagates in or through a homogeneous and isotropic transparent medium, it is generally accepted that its transverse polarization structure remains unchanged. However, we show that a strong radial polarization component can be generated when an azimuthally polarized sine-Gaussian plane wave is tightly focused by a high numerical aperture lens, resulting in a magneto-optical-like effect that does not require external magnetic field or magnetic medium. Calculations show that the intensity structure and polarization distribution of the highly confined electric field strongly depend on the parameters m and φ0 in the sinusoidal term, where m can be used to control the number of the multifocal spots and φ0 can be used to control the position of each focal spot. Finally, we show that this peculiar electric field distribution can be used to realize multiple particles trapping with controllable numbers and locations.

SdH Oscillations from the Dirac Surface State in the Fermi-Arc Antiferromagnet NdBi

The recent progress in CuMnAs and Mn3X (X = Sn, Ge, Pt) shows that antiferromagnets (AFMs) provide a promising platform for advanced spintronics device innovations. Most recently, a switchable Fermi-arc is discovered by the ARPES technique in antiferromagnet NdBi, but the knowledge about electron-transport property and the manipulability of the magnetic structure in NdBi is still vacant to date. In this study, SdH oscillations are successfully verified from the Dirac surface states (SSs) with 2-dimensionality and nonzero Berry phase. Particularly, it is observed that the spin-flop transition only appears when the external magnetical field is applied along [001] direction, and features obvious hysteresis for the first time in NdBi, which provides a powerful handle for adjusting the spin texture in NdBi. Crucially, the DFT shows the Dirac cone and the Fermi arc strongly depend on the high-order magnetic structure of NdBi and further reveals the orbital magnetic moment of Nd plays a crucial role in fostering the peculiar SSs, leading to unveil the mystery of the band-splitting effect and to manipulate the electronic transport, high-effectively, in the thin film works in NdBi. It is believed that this study provides important guidance for the development of new antiferromagnet-based spintronics devices based on cutting-edge rare-earth monopnictides.

Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium

Recently, orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of the antiferromagnetic state in Mn3Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal-based heterostructures. However, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures, is much less efficient than the Pt-based equivalents, as manifested in the 1 order of magnitude smaller terahertz emission intensity and spin current-induced magnetoresistance. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ∼11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as efficient orbital/spin current sources for antiferromagnetic spintronics.

Electric Field-Controlled Magneto-Optical Kerr Effect in A-Type Antiferromagnetic Fe2CX2 (X = F, Cl) and Its Janus Monolayer

The magneto-optical Kerr effect (MOKE) is a powerful probe of magnetism and has recently gained new attention in antiferromagnetic (AFM) materials. Through extensive first-principles calculations and group theory analysis, we have identified Fe2CX2 (X = F, Cl) and Janus Fe2CFCl monolayers as ideal A-type collinear AFM materials with high magnetic anisotropy and Néel temperatures. By applying a vertical external electrical field (Ef) of 0.2 V/Å, the MOKE is activated for Fe2CF2 and Fe2CCl2 monolayers without changing their magnetic ground state, and the maximum Kerr rotation angles are 0.13 and 0.08°, respectively. Due to the out-of-plane spontaneous polarization, the intrinsic and nonvolatile MOKE is found in the Janus Fe2CFCl monolayer and the maximal Kerr rotation angle without external electronic field is 0.25°. Moreover, the intrinsic built-in electronic field also gives origin to more robust A-type AFM ordering and reversible Kerr angle against external Ef. Our study suggests that Ef is an effective tool for controlling MOKE in two-dimensional (2D) AFM materials. This research opens the possibility of related studies and applications in AFM spintronics.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Strong Magneto-Optical Kerr Effects in Ni-Doped ZnO Nanolaminate Structures Obtained by Atomic Layer Deposition

The magneto-optical (MO) Kerr effects for ZnO and ZnO:Ni-doped nanolaminate structures prepared using atomic layer deposition (ALD) have been investigated. The chemical composition and corresponding structural and morphological properties were studied using XRD and XPS and compared for both nanostructures. The 2D array gradient maps of microscale variations of the Kerr angle polarization rotation were acquired by means of MO Kerr microscopy. The obtained data revealed complex behavior and broad statistical dispersion and showed distinct qualitative and quantitative differences between the undoped ZnO and ZnO:Ni-doped nanolaminates. The detected magneto-optical response is extensively inhomogeneous in ZnO:Ni films, and a giant Kerr polarization rotation angle reaching up to ~2° was established. This marks the prospects for further development of magneto-optical effects in ALD ZnO modified by transition metal oxide nanostructures.

Zero-field-cooling exchange bias up to room temperature in the strained kagome antiferromagnet Mn3.1Sn0.9

Zero-field-cooling exchange bias (ZFC EB) has always been a research hotspot for researchers, because it can realize the movement of the magnetization hysteresis loop along the field axis without field cooling, which greatly expands the universality and convenience of the application of the exchange bias effect. Achieving ZFC EB at room temperature is an ongoing challenge. To this end, a design strategy from the sublattice level is proposed, and a wide temperature range ZFC EB up to room temperature with a vertical magnetization shift is observed in the strained kagome antiferromagnet Mn3.1Sn0.9. Magnetic analysis and first-principles calculations reveal that the ZFC EB arises from the strong exchange interaction between the non-coplanar antiferromagnetic Mn kagome sublattice occupying normal Mn sites and the collinear ferromagnetic Mn sublattice occupying Sn sites. This discovery is of great significance for the application of ZFC EB in antiferromagnetic spintronic devices.

Handedness anomaly in a non-collinear antiferromagnet under spin-orbit torque

Non-collinear antiferromagnets are an emerging family of spintronic materials because they not only possess the general advantages of antiferromagnets but also enable more advanced functionalities. Recently, in an intriguing non-collinear antiferromagnet Mn3Sn, where the octupole moment is defined as the collective magnetic order parameter, spin-orbit torque (SOT) switching has been achieved in seemingly the same protocol as in ferromagnets. Nevertheless, it is fundamentally important to explore the unknown octupole moment dynamics and contrast it with the magnetization vector of ferromagnets. Here we report a handedness anomaly in the SOT-driven dynamics of Mn3Sn: when spin current is injected, the octupole moment rotates in the opposite direction to the individual moments, leading to a SOT switching polarity distinct from ferromagnets. By using second-harmonic and d.c. magnetometry, we track the SOT effect onto the octupole moment during its rotation and reveal that the handedness anomaly stems from the interactions between the injected spin and the unique chiral-spin structure of Mn3Sn. We further establish the torque balancing equation of the magnetic octupole moment and quantify the SOT efficiency. Our finding provides a guideline for understanding and implementing the electrical manipulation of non-collinear antiferromagnets, which in nature differs from the well-established collinear magnets.

Coherent antiferromagnetic spintronics

Antiferromagnets have attracted extensive interest as a material platform in spintronics. So far, antiferromagnet-enabled spin-orbitronics, spin-transfer electronics and spin caloritronics have formed the bases of antiferromagnetic spintronics. Spin transport and manipulation based on coherent antiferromagnetic dynamics have recently emerged, pushing the developing field of antiferromagnetic spintronics towards a new stage distinguished by the features of spin coherence. In this Review, we categorize and analyse the critical effects that harness the coherence of antiferromagnets for spintronic applications, including spin pumping from monochromatic antiferromagnetic magnons, spin transmission via phase-correlated antiferromagnetic magnons, electrically induced spin rotation and ultrafast spin-orbit effects in antiferromagnets. We also discuss future opportunities in research and applications stimulated by the principles, materials and phenomena of coherent antiferromagnetic spintronics.

Magneto-optical Kerr Effect in Ferroelectric Antiferromagnetic Two-Dimensional Heterostructures

We studied the magneto-optical Kerr effect (MOKE) of two-dimensional (2D) heterostructure CrI₃/In₂Se₃/CrI₃ using density functional theory calculations and symmetry analysis. The spontaneous polarization in the In₂Se₃ ferroelectric layer and the antiferromagnetic ordering in CrI₃ layers break the mirror and the time-reversal symmetry, thus activating MOKE. We show that the Kerr angle can be reversed by either the polarization or the antiferromagnetic order parameter. Our results suggest that ferroelectric and antiferromagnetic 2D heterostructures could be exploited for ultracompact information storage devices, where the information is encoded by the two ferroelectric or the two time-reversed antiferromagnetic states and the read-out is performed optically by MOKE.

Field-linear anomalous Hall effect and Berry curvature induced by spin chirality in the kagome antiferromagnet Mn3Sn

During the past two decades, it has been established that a non-trivial electron wave-function topology generates an anomalous Hall effect (AHE), which shows itself as a Hall conductivity non-linear in magnetic field. Here, we report on an unprecedented case of field-linear AHE. In Mn₃Sn, a kagome magnet, the out-of-plane Hall response, which shows an abrupt jump, was discovered to be a case of AHE. We find now that the in-plane Hall response, which is perfectly linear in magnetic field, is set by the Berry curvature of the wavefunction. The amplitude of the Hall response and its concomitant Nernst signal exceed by far what is expected in the semiclassical picture. We argue that magnetic field induces out-of-plane spin canting and thereafter gives rise to nontrivial spin chirality on the kagome lattice. In band structure, we find that the spin chirality modifies the topology by gapping out Weyl nodal lines unknown before, accounting for the AHE observed. Our work reveals intriguing unification of real-space Berry phase from spin chirality and momentum-space Berry curvature in a kagome material.

Ho-Ion-Polymer/Graphene Heterojunctions Toward Room-Temperature Ferromagnets

Organic ferromagnetic materials offer great promise for spintronic devices, carbon-based chips, and quantum communications, but remain as a challenging issue due to their low saturation magnetization and/or unsustainable ferromagnetic properties. To date, magnetic ion polymers have displayed paramagnetism without exception at room-temperature. In this study, it is reported for the first time that, owing to the structural restriction and charge exchange of Ho ion by polymer/graphene π-π stacking heterojunctions, holmium ion polymer composites exhibited typical hysteresis lines of ferromagnetic materials at room temperature. The room-temperature ferromagnetic ion polymer composite presented the highest saturation magnetization value of 3.36 emu g^-1 and unprecedented sustainable ferromagnetism, compared to reported room-temperature organic ferromagnetic materials. Accordingly, prepared ferromagnetic composites also achieved impressive wave absorption properties, with a maximum reflection loss of as much as -57.32 dB and a broad absorption bandwidth of 5.05 GHz. These findings may promote the development of room-temperature organic ferromagnetic materials.

Magnetoplasmonic Nanoantennas for On-Chip Reconfigurable Optical Wireless Communications

On-chip wireless communications require optical nanoantennas with dynamically tunable radiation patterns, which may allow for higher integration with multiple nanoantennas instead of two fixed nanoantennas in existing approaches. In this paper, we introduce a concept to enable active manipulation of radiated beam steering using applied magnetic fields. The proposed system consists of a highly directive Yagi-Uda-like arrangement of magnetoplasmonic nanoribs made of Co₆Ag₉₄ and immersed in SiO₂. Numerical demonstration of the tilting of the radiated beam from the nanoantenna on its plane is provided with full-wave electromagnetic simulations using the finite element method. The tilt direction of the radiated beam can be changed by reversing the magnetization direction, while the conventional plasmonic nanoantenna pattern is recovered by demagnetizing the system. The geometry of the nanoantenna can be tailored to work at optical or infrared wavelengths, but a proof of concept for λ = 700 nm is conducted for taking advantage of the high magneto-optical activity of Co₆Ag₉₄. The design was based on experimental data for materials that can be fabricated via nanolithography, thus permitting magnetically on-chip reconfigurable optical wireless communications.

Controlling the Magneto-Optical Response in Ultrathin Films of EuO1-x via Interface Engineering with Ferroelectric BaTi2O5

Utilizing pulsed laser deposition, a film of EuO1-x was deposited onto a Si(001) substrate with MgO buffer and compared to the same heterostructure with an additional BaTi2O5 thin film on top of the EuO1-x surface. X-ray diffraction (XRD) indicates the films crystallize into a preferred EuO(111) orientation; it also reveals the clear presence of EuSi2, which suggests Si or Eu diffuses across the MgO buffer layer. EuO1-x films exhibit a ferromagnetic (FM) signature and temperature-dependent exchange bias, indicated by MOKE measurements, suggesting the presence of a magnetic order well above the EuO Curie temperature with possible origins in charge carrier density near the interface. In comparison, an antiferromagnetic character persists well above the EuO Curie temperature of 69 K and the enhanced Curie temperature of 150 K for BaTi2O5 films grown on the EuO1-x films. The antiferromagnetic behavior is not seen in thicker EuO1-x thin films when integrated with other ferroelectric (FE) phases of the BaO-TiO2 system, suggesting an origin in the perturbed charge population at the BaTi2O5/EuO1-x interface.

Topological Hall Effect in Thin Films of an Antiferromagnetic Weyl Semimetal Integrated on Si

Since the large room-temperature anomalous Hall effect was discovered in noncollinear antiferromagnets, Mn₃Sn has received immense research interest as it exhibits abundant exotic physical properties including Weyl points and enormous potential for antiferromagnetic spintronic device applications. In this work, we report the emergence of the topological Hall effect in Mn₃Sn films grown on Si that is the workhorse for the modern highly integrated information technology. Importantly, through a series of systematic comparative experiments, the intriguing topological Hall effect phenomenon related to the appearance of the noncoplanar chiral spin structure is found to be induced by the Mn₃Sn/SiO₂ interface. Furthermore, it was found that the current injection to a Pt/Mn₃Sn bilayer Hall bar device can effectively manipulate the chiral spin structure of Mn₃Sn, which demonstrates the feasibility of Si-based noncollinear antiferromagnetic spintronics.

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices^1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface¹ and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn₃Sn/MgO/Mn₃Sn (ref. ⁶). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn₃Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet⁷ can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets^8-10.

High Verdet Constant Glass for Magnetic Field Sensors

Due to the high transparency, high Verdet constant, as well as easy processing properties, rare-earth ion-doped glasses have demonstrated great potential in magneto-optical (MO) applications. However, the variation in the valence state of rare-earth ions (Tb³⁺ to Tb⁴⁺) resulted in the decreased effective concentration of the paramagnetic ions and thus degraded MO performance. Here, a strategy was proposed to inhibit the oxidation of Tb³⁺ into Tb⁴⁺ as well as improve the thermal stability by tuning the optical basicity of glass networks. Moreover, the depolymerization of the glass network was modulated to accommodate more Tb ions. Thus, a record high effective concentration (14.19 × 10²¹/cm³) of Tb ions in glass was achieved, generating a high Verdet constant of 113 rad/(T·m) at 650 nm. Lastly, the first application of MO glass for magnetic field sensors was demonstrated, achieving a sensitivity of 0.139 rad/T. We hope our work provides guidance for the fabrication of MO glass with high performance and thermal stability and could push MO glass one step further for magnetic sensing applications.

Topological kagome magnets and superconductors

A kagome lattice naturally features Dirac fermions, flat bands and van Hove singularities in its electronic structure. The Dirac fermions encode topology, flat bands favour correlated phenomena such as magnetism, and van Hove singularities can lead to instabilities towards long-range many-body orders, altogether allowing for the realization and discovery of a series of topological kagome magnets and superconductors with exotic properties. Recent progress in exploring kagome materials has revealed rich emergent phenomena resulting from the quantum interactions between geometry, topology, spin and correlation. Here we review these key developments in this field, starting from the fundamental concepts of a kagome lattice, to the realizations of Chern and Weyl topological magnetism, to various flat-band many-body correlations, and then to the puzzles of unconventional charge-density waves and superconductivity. We highlight the connection between theoretical ideas and experimental observations, and the bond between quantum interactions within kagome magnets and kagome superconductors, as well as their relation to the concepts in topological insulators, topological superconductors, Weyl semimetals and high-temperature superconductors. These developments broadly bridge topological quantum physics and correlated many-body physics in a wide range of bulk materials and substantially advance the frontier of topological quantum matter.

Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD

ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular interest as it can induce various magnetic phenomena and behaviors. The advanced atomic layer deposition (ALD) technique makes it possible to obtain very thin layers of doped ZnO with controllable thicknesses and compositions that are compatible with the main microelectronic technologies, which further boosts the interest. The present study provides an extended analysis of the magneto-optical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD. The structural, magneto-optical, and dielectric properties were considered in relation to the technological details of the ALD process and the corresponding dopant effects. All doped samples show a strong MO Kerr behavior with a substantial magnetization response and very high values of the Kerr polarization angle, especially in the case of ZnO/Fe. In addition, the results give evidence that Fe-doped ZnO also demonstrates a ferroelectric behavior. In this context, the observed rich and versatile physical nature and functionality open up new prospects for the application of these nanostructured materials in advanced electronic, spintronic, and optical devices.

Higher harmonics in planar Hall effect induced by cluster magnetic multipoles

Antiferromagnetic (AFM) materials are attracting tremendous attention due to their spintronic applications and associated novel topological phenomena. However, detecting and identifying the spin configurations in AFM materials are quite challenging due to the absence of net magnetization. Herein, we report the practicality of utilizing the planar Hall effect (PHE) to detect and distinguish “cluster magnetic multipoles” in AFM Nd₂Ir₂O₇ (NIO-227) fully strained films. By imposing compressive strain on the spin structure of NIO-227, we artificially induced cluster magnetic multipoles, namely dipoles and A₂- and T₁-octupoles. Importantly, under magnetic field rotation, each magnetic multipole exhibits distinctive harmonics of the PHE oscillation. Moreover, the planar Hall conductivity has a nonlinear magnetic field dependence, which can be attributed to the magnetic response of the cluster magnetic octupoles. Our work provides a strategy for identifying cluster magnetic multipoles in AFM systems and would promote octupole-based AFM spintronics.

The lack of net magnetization in antiferromagnets makes them technologically promising, but it also makes detecting the spin orders challenging. Here, using electrical transport measurement, Song et al show how the planar Hall effect can detect different cluster magnetic multipoles in antiferromagnetic Nd₂Ir₂O₇ film.

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn₃Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn₃Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn₃Sn and Ti/Mn₃Sn bilayers, where external injection of spin Hall current to Mn₃Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure.

Under an applied current, chiral antiferromagnets, such as Mn₃Sn, can produce a spin-polarized current. Here, by varying the thickness of a buffering layer, the authors show that this spin-polarized current can drive self-induced switching in polycrystalline Mn₃Sn.

Noncollinear Spin Current for Switching of Chiral Magnetic Textures

We propose a concept of noncollinear spin current, whose spin polarization varies in space even in nonmagnetic crystals. While it is commonly assumed that the spin polarization of the spin Hall current is uniform, asymmetric local crystal potential generally allows the spin polarization to be noncollinear in space. Based on microscopic considerations, we demonstrate that such noncollinear spin Hall currents can be observed, for example, in layered Kagome Mn_{3}X (X=Ge, Sn) compounds. Moreover, by referring to atomistic spin dynamics simulations we show that noncollinear spin currents can be used to switch the chiral spin texture of Mn_{3}X in a deterministic way even in the absence of an external magnetic field. Our theoretical prediction can be readily tested in experiments, which will open a novel route toward electric control of complex spin structures in noncollinear antiferromagnets.

Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures

Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.

Perpendicular full switching of chiral antiferromagnetic order by current

Electrical control of a magnetic state of matter lays the foundation for information technologies and for understanding of spintronic phenomena. Spin-orbit torque provides an efficient mechanism for the electrical manipulation of magnetic orders^1-11. In particular, spin-orbit torque switching of perpendicular magnetization in nanoscale ferromagnetic bits has enabled the development of stable, reliable and low-power memories and computation^12-14. Likewise, for antiferromagnetic spintronics, electrical bidirectional switching of an antiferromagnetic order in a perpendicular geometry may have huge impacts, given its potential advantage for high-density integration and ultrafast operation^15,16. Here we report the experimental realization of perpendicular and full spin-orbit torque switching of an antiferromagnetic binary state. We use the chiral antiferromagnet Mn₃Sn (ref. ¹⁷), which exhibits the magnetization-free anomalous Hall effect owing to a ferroic order of a cluster magnetic octupole hosted in its chiral antiferromagnetic state¹⁸. We fabricate heavy-metal/Mn₃Sn heterostructures by molecular beam epitaxy and introduce perpendicular magnetic anisotropy of the octupole using an epitaxial in-plane tensile strain. By using the anomalous Hall effect as the readout, we demonstrate 100 per cent switching of the perpendicular octupole polarization in a 30-nanometre-thick Mn₃Sn film with a small critical current density of less than 15 megaamperes per square centimetre. Our theory reveals that the perpendicular geometry between the polarization directions of current-induced spin accumulation and of the octupole persistently maximizes the spin-orbit torque efficiency during the deterministic bidirectional switching process. Our work provides a significant basis for antiferromagnetic spintronics.

Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque

The current-induced spin-orbit torque switching of ferromagnets has had huge impact in spintronics. However, short spin-diffusion lengths limit the thickness of switchable ferromagnetic layers, thereby limiting their thermal stability. Here, we report a previously unobserved seeded spin-orbit torque (SSOT) by which current can set the magnetic states of even thick layers of the chiral kagome antiferromagnet Mn₃Sn. The mechanism involves setting the orientation of the antiferromagnetic domains in a thin region at the interface with spin currents arising from an adjacent heavy metal while also heating the layer above its magnetic ordering temperature. This interface region seeds the resulting spin texture of the entire layer as it cools down and, thereby, overcomes the thickness limitation of conventional spin-orbit torques. SSOT switching in Mn₃Sn can be extended beyond chiral antiferromagnets to diverse magnetic systems and provides a path toward the development of highly efficient, high-speed, and thermally stable spintronic devices.

Progress and prospects in magnetic topological materials

Magnetic topological materials represent a class of compounds with properties that are strongly influenced by the topology of their electronic wavefunctions coupled with the magnetic spin configuration. Such materials can support chiral electronic channels of perfect conduction, and can be used for an array of applications, from information storage and control to dissipationless spin and charge transport. Here we review the theoretical and experimental progress achieved in the field of magnetic topological materials, beginning with the theoretical prediction of the quantum anomalous Hall effect without Landau levels, and leading to the recent discoveries of magnetic Weyl semimetals and antiferromagnetic topological insulators. We outline recent theoretical progress that has resulted in the tabulation of, for the first time, all magnetic symmetry group representations and topology. We describe several experiments realizing Chern insulators, Weyl and Dirac magnetic semimetals, and an array of axionic and higher-order topological phases of matter, and we survey future perspectives.

Large anomalous Nernst effect and nodal plane in an iron-based kagome ferromagnet

Anomalous Nernst effect (ANE), converting a heat flow to transverse electric voltage, originates from the Berry phase of electronic wave function near the Fermi energy E_F. Thus, the ANE provides a sensitive probe to detect a topological state that produces large Berry curvature. In addition, a magnet that exhibits a large ANE using low-cost and safe elements will be useful to develop a novel energy harvesting technology. Here, we report our observation of a high ANE exceeding 3 microvolts per kelvin above room temperature in the kagome ferromagnet Fe₃Sn with the Curie temperature of 760 kelvin. Our theoretical analysis clarifies that a “nodal plane” produces a flat hexagonal frame with strongly enhanced Berry curvature, resulting in the large ANE. Our discovery of the large ANE in Fe₃Sn opens the path for the previously unexplored functionality of flat degenerate electronic states and for developing flexible film thermopile and heat current sensors.

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn₃Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn₃Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.

Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological antiferromagnet Mn₃Sn.

Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet

Out-of-plane spin polarization σz has attracted increasing interests of researchers recently, due to its potential in high-density and low-power spintronic devices. Noncollinear antiferromagnet (AFM), which has unique 120° triangular spin configuration, has been discovered to possess σz. However, the physical origin of σz in noncollinear AFM is still not clear, and the external magnetic field-free switching of perpendicular magnetic layer using the corresponding σz has not been reported yet. Here, we use the cluster magnetic octupole in antiperovskite AFM Mn3SnN to demonstrate the generation of σz. σz is induced by the precession of carrier spins when currents flow through the cluster magnetic octupole, which also relies on the direction of the cluster magnetic octupole in conjunction with the applied current. With the aid of σz, current induced spin-orbit torque (SOT) switching of adjacent perpendicular ferromagnet is realized without external magnetic field. Our findings present a new perspective to the generation of out-of-plane spin polarizations via noncollinear AFM spin structure, and provide a potential path to realize ultrafast high-density applications.

Prediction of unconventional magnetism in doped FeSb2

It is commonly believed that the energy bands of typical collinear antiferromagnets (AFs), which have zero net magnetization, are Kramers spin-degenerate. Kramers nondegeneracy is usually associated with a global time-reversal symmetry breaking (e.g., via ferromagnetism) or with a combination of spin-orbit interaction and broken spatial inversion symmetry. Recently, another type of spin splitting was demonstrated to emerge in some collinear magnets that are fully spin compensated by symmetry, nonrelativistic, and not even necessarily noncentrosymmetric. These materials feature nonzero spin density staggered in real space as seen in traditional AFs but also spin splitting in momentum space, generally seen only in ferromagnets. This results in a combination of materials characteristics typical of both ferromagnets and AFs. Here, we discuss this recently discovered class with application to a well-known semiconductor, FeSb₂, and predict that with certain alloying, it becomes magnetic and metallic and features the aforementioned magnetic dualism. The calculated energy bands split antisymmetrically with respect to spin-degenerate nodal surfaces rather than nodal points, as in the case of spin-orbit splitting. The combination of a large (0.2-eV) spin splitting, compensated net magnetization with metallic ground state, and a specific magnetic easy axis generates a large anomalous Hall conductivity (∼150 S/cm) and a sizable magnetooptical Kerr effect, all deemed to be hallmarks of nonzero net magnetization. We identify a large contribution to the anomalous response originating from the spin-orbit interaction gapped anti-Kramers nodal surfaces, a mechanism distinct from the nodal lines and Weyl points in ferromagnets.

Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Here, we show an unconventional response to spin-orbit torque of a non-collinear antiferromagnet Mn₃Sn, which has attracted attention owing to its large anomalous Hall effect despite a vanishingly small net magnetization. In epitaxial heavy-metal/Mn₃Sn heterostructures, we observe a characteristic fluctuation of the Hall resistance under the application of electric current. This observation is explained by a rotation of the chiral-spin structure of Mn₃Sn driven by spin-orbit torque. We find that the variation of the magnitude of anomalous Hall effect fluctuation with sample size correlates with the number of magnetic domains in the Mn₃Sn layer. In addition, the dependence of the critical current on Mn₃Sn layer thickness reveals that spin-orbit torque generated by small current densities, below 20 MA cm^-2, effectively acts on the chiral-spin structure even in Mn₃Sn layers that are thicker than 20 nm. The results provide additional pathways for electrical manipulation of magnetic materials.

X-ray study of ferroic octupole order producing anomalous Hall effect

Recently found anomalous Hall, Nernst, magnetooptical Kerr, and spin Hall effects in the antiferromagnets Mn3X (X = Sn, Ge) are attracting much attention for spintronics and energy harvesting. Since these materials are antiferromagnets, the origin of these functionalities is expected to be different from that of conventional ferromagnets. Here, we report the observation of ferroic order of magnetic octupole in Mn3Sn by X-ray magnetic circular dichroism, which is only predicted theoretically so far. The observed signals are clearly decoupled with the behaviors of uniform magnetization, indicating that the present X-ray magnetic circular dichroism is not arising from the conventional magnetization. We have found that the appearance of this anomalous signal coincides with the time reversal symmetry broken cluster magnetic octupole order. Our study demonstrates that the exotic material functionalities are closely related to the multipole order, which can produce unconventional cross correlation functionalities.

Ultrafast Modulations and Detection of a Ferro-Rotational Charge Density Wave Using Time-Resolved Electric Quadrupole Second Harmonic Generation

We show the ferro-rotational nature of the commensurate charge density wave (CCDW) in 1T-TaS_{2} and track its dynamic modulations by temperature-dependent and time-resolved electric quadrupole rotation anisotropy-second harmonic generation (EQ RA-SHG), respectively. The ultrafast modulations manifest as the breathing and the rotation of the EQ RA-SHG patterns at three frequencies around the reported single CCDW amplitude mode frequency. A sudden shift of the triplet frequencies and a dramatic increase in the breathing and rotation magnitude further reveal a photoinduced transient CDW phase across a critical pump fluence of ∼0.5  mJ/cm^{2}.

Large ultrafast-modulated Voigt effect in noncollinear antiferromagnet Mn3Sn

The time-resolved magneto-optical (MO) Voigt effect can be utilized to study the Néel order dynamics in antiferromagnetic (AFM) materials, but it has been limited for collinear AFM spin configuration. Here, we have demonstrated that in Mn₃Sn with an inverse triangular spin structure, the quench of AFM order by ultrafast laser pulses can result in a large Voigt effect modulation. The modulated Voigt angle is significantly larger than the polarization rotation due to the crystal-structure related linear dichroism effect and the modulated MO Kerr angle arising from the ferroic ordering of cluster magnetic octupole. The AFM order quench time shows negligible change with increasing temperature approaching the Néel temperature (T_N), in markedly contrast with the pronounced slowing-down demagnetization typically observed in conventional magnetic materials. This atypical behavior can be explained by the influence of weakened Dzyaloshinskii–Moriya interaction rather than the smaller exchange splitting on the diminished AFM order near T_N. The temperature-insensitive ultrafast spin manipulation can pave the way for high-speed spintronic devices either working at a wide range of temperature or demanding spin switching near T_N.

Mn3Sn is an anti-ferromagnetic material which displays a large magneto-optical Kerr effect, despite lacking a ferromagnetic moment. Here, the authors show that likewise, Mn3Sn, also presents a particularly large magneto-optical Voigt signal, with a negligible change in the quench time over a wide temperature range.

Spontaneous Formation of Ordered Magnetic Domains by Patterning Stress

The formation of ordered magnetic domains in thin films is important for the magnetic microdevices in spin-electronics, magneto-optics, and magnetic microelectromechanical systems. Although inducing anisotropic stress in magnetostrictive materials can achieve the domain assembly, controlling magnetic anisotropy over microscale areas is challenging. In this work, we realized the microscopic patterning of magnetic domains by engineering stress distribution. Deposition of ferromagnetic thin films on nanotrenched polymeric layers induced tensile stress at the interfaces, giving rise to the directional magnetoelastic coupling to form ordered domains spontaneously. By changing the periodicity and shape of nanotrenches, we spatially tuned the geometric configuration of domains by design. Theoretical analysis and micromagnetic characterization confirmed that the local stress distribution by the topographic confinement dominates the forming mechanism of the directed magnetization.

A Monomaterial Nernst Thermopile with Hermaphroditic Legs

A large transverse thermoelectric response, known as the anomalous Nernst effect (ANE) has been recently observed in several topological magnets. Building a thermopile employing this effect has been the subject of several recent propositions. Here, a thermopile is designed and built with an array of tilted adjacent crystals of Mn₃ Sn. The design employs a single material and replaces pairs of P and N thermocouples of the traditional design with hermaphroditic legs. The design exploits the large lag angle between the applied field and the magnetization, which is attributed to the interruption of magnetic octupoles at the edge of the xy-plane. Eliminating extrinsic contact between the legs will boost the efficiency, simplify the process, and pave the way for a new generation of thermopiles.

Probing charge pumping and relaxation of the chiral anomaly in a Dirac semimetal

The linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or antiparallel locking of electron spin to its momentum. These materials are believed to exhibit an E · B chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial Cd3As2 films and extract their conductivities σ(ω) as a function of E · B. As field is applied, we observe a markedly sharp Drude response that rises out of the broader background. Its appearance is a definitive signature of a new transport channel and consistent with the chiral response, with its spectral weight a measure of the net chiral charge and width a measure of the scattering rate between chiral species. The field independence of the chiral relaxation establishes that it is set by the approximate conservation of the isospin that labels the crystalline point-group representations.

Topological Quantum Materials from the Viewpoint of Chemistry

Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds, and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.

Nitride-Oxide-Metal Heterostructure with Self-Assembled Core-Shell Nanopillar Arrays: Effect of Ordering on Magneto-Optical Properties

Magneto-optical (MO) coupling incorporates photon-induced change of magnetic polarization that can be adopted in ultrafast switching, optical isolators, mode convertors, and optical data storage components for advanced optical integrated circuits. However, integrating plasmonic, magnetic, and dielectric properties in one single material system poses challenges since one natural material can hardly possess all these functionalities. Here, co-deposition of a three-phase heterostructure composed of a durable conductive nitride matrix with embedded core-shell vertically aligned nanopillars, is demonstrated. The unique coupling between ferromagnetic NiO core and atomically sharp plasmonic Au shell enables strong MO activity out-of-plane at room temperature. Further, a template growth process is applied, which significantly enhances the ordering of the nanopillar array. The ordered nanostructure offers two schemes of spin polarization which result in stronger antisymmetry of Kerr rotation. The presented complex hybrid metamaterial platform with strong magnetic and optical anisotropies is promising for tunable and modulated all-optical-based nanodevices.

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn₃X (X = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn₃X (X = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn₃X (X = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn₃Sn and Mn₃Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn₃Ge and planar Hall effect in Mn₃Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.

The large anomalous Hall (AHE) and anomalous Nernst effects (ANE) in antiferromagnets Mn₃Sn/Mn₃Ge are considered fingerprints of Weyl nodes residing near the Fermi energy. Here, the authors review the results from previous studies combining with new transport measurements on Mn₃Sn/Mn₃Ge single crystals, suggesting the essential role of magnetic Weyl fermions in explaining the AHE and ANE.

Magnetic and Electronic Properties of Weyl Semimetal Co2MnGa Thin Films

Magnetic Weyl semimetals are newly discovered quantum materials with the potential for use in spintronic applications. Of particular interest is the cubic Heusler compound Co2MnGa due to its inherent magnetic and topological properties. This work presents the structural, magnetic and electronic properties of magnetron co-sputtered Co2MnGa thin films, with thicknesses ranging from 10 to 80 nm. Polarized neutron reflectometry confirmed a uniform magnetization through the films. Hard x-ray photoelectron spectroscopy revealed a high degree of spin polarization and localized (itinerant) character of the Mn d (Co d) valence electrons and accompanying magnetic moments. Further, broadband and field orientation-dependent ferromagnetic resonance measurements indicated a relation between the thickness-dependent structural and magnetic properties. The increase of the tensile strain-induced tetragonal distortion in the thinner films was reflected in an increase of the cubic anisotropy term and a decrease of the perpendicular uniaxial term. The lattice distortion led to a reduction of the Gilbert damping parameter and the thickness-dependent film quality affected the inhomogeneous linewidth broadening. These experimental findings will enrich the understanding of the electronic and magnetic properties of magnetic Weyl semimetal thin films.

Switchable multifunctional modulator realized by the stacked graphene-based hyperbolic metamaterial unit cells

A tunable multifunctional modulator of the stacked graphene-based hyperbolic metamaterial (HM) cells is proposed. The dielectric constant and group index of HM are theoretically investigated. The calculated results show that, for the cell structure, a transmission window in the reflection zone (TWRZ) can be obtained at the normal incidence, but all reflections are converted to the transmission when the incident angle is near 82°. Concurrently, a single frequency absorption in the transmission zone (SFATZ) is realized, which can be adjusted by the chemical potential of graphene. For the whole structure composed of cell structures with different chemical potentials, the ultra-wideband absorption and transmission window in the absorption zone (TWAZ) can be achieved, which can work in different frequency bands if the given structural parameters can be tailored. Those computed results can apply for switchable frequency-dependent and angle-dependent reflection-transmission modulations, single frequency and ultra-wideband absorbers, and a logic switch based on the TWAZ.

Extreme anti-reflection enhanced magneto-optic Kerr effect microscopy

Magnetic and spintronic media have offered fundamental scientific subjects and technological applications. Magneto-optic Kerr effect (MOKE) microscopy provides the most accessible platform to study the dynamics of spins, magnetic quasi-particles, and domain walls. However, in the research of nanoscale spin textures and state-of-the-art spintronic devices, optical techniques are generally restricted by the extremely weak magneto-optical activity and diffraction limit. Highly sophisticated, expensive electron microscopy and scanning probe methods thus have come to the forefront. Here, we show that extreme anti-reflection (EAR) dramatically improves the performance and functionality of MOKE microscopy. For 1-nm-thin Co film, we demonstrate a Kerr amplitude as large as 20° and magnetic domain imaging visibility of 0.47. Especially, EAR-enhanced MOKE microscopy enables real-time detection and statistical analysis of sub-wavelength magnetic domain reversals. Furthermore, we exploit enhanced magneto-optic birefringence and demonstrate analyser-free MOKE microscopy. The EAR technique is promising for optical investigations and applications of nanomagnetic systems.

Au-Encapsulated Fe Nanorods in Oxide Matrix with Tunable Magneto-Optic Coupling Properties

Materials with magneto-optic coupling properties are highly coveted for their potential applications ranging from spintronics and optical switches to sensors. In this work, a new, three-phase Au-Fe-La_0.5Sr_0.5FeO₃ (LSFO) hybrid material grown in a vertically aligned nanocomposite (VAN) form has been demonstrated. This three-phase hybrid material combines the strong ferromagnetic properties of Fe and the strong plasmonic properties of Au and the dielectric nature of the LSFO matrix. More interestingly, the immiscible Au and Fe phases form Au-encapsulated Fe nanopillars, embedded in the LSFO matrix. Multifunctionalities including anisotropic optical dielectric properties, plasmonic properties, magnetic anisotropy, and room-temperature magneto-optic Kerr effect coupling are demonstrated. The single-step growth method to grow the immiscible two-metal nanostructures (i.e., Au and Fe) in the complex hybrid material form opens exciting new potential opportunities for future three-phase VAN systems with more versatile metal selections.