Thermoelectric properties of SnSe nanowires with different diameters

Enabling Oxidation Protection and Carrier-Type Switching for Bismuth Telluride Nanoribbons via in Situ Organic Molecule Coating

Thermoelectric materials with high electrical conductivity and low thermal conductivity (e.g., Bi2Te3) can efficiently convert waste heat into electricity; however, in spite of favorable theoretical predictions, individual Bi2Te3 nanostructures tend to perform less efficiently than bulk Bi2Te3. We report a greater-than-order-of-magnitude enhancement in the thermoelectric properties of suspended Bi2Te3 nanoribbons, coated in situ to form a Bi2Te3/F4-TCNQ core-shell nanoribbon without oxidizing the core-shell interface. The shell serves as an oxidation barrier but also directly functions as a strong electron acceptor and p-type carrier donor, switching the majority carriers from a dominant n-type carrier concentration (∼1021 cm-3) to a dominant p-type carrier concentration (∼1020 cm-3). Compared to uncoated Bi2Te3 nanoribbons, our Bi2Te3/F4-TCNQ core-shell nanoribbon demonstrates an effective chemical potential dramatically shifted toward the valence band (by 300-640 meV), robustly increased Seebeck coefficient (∼6× at 250 K), and improved thermoelectric performance (10-20× at 250 K).

Advancing Thermoelectric Materials: A Comprehensive Review Exploring the Significance of One-Dimensional Nano Structuring

Amidst the global challenges posed by pollution, escalating energy expenses, and the imminent threat of global warming, the pursuit of sustainable energy solutions has become increasingly imperative. Thermoelectricity, a promising form of green energy, can harness waste heat and directly convert it into electricity. This technology has captivated attention for centuries due to its environmentally friendly characteristics, mechanical stability, versatility in size and substrate, and absence of moving components. Its applications span diverse domains, encompassing heat recovery, cooling, sensing, and operating at low and high temperatures. However, developing thermoelectric materials with high-performance efficiency faces obstacles such as high cost, toxicity, and reliance on rare-earth elements. To address these challenges, this comprehensive review encompasses pivotal aspects of thermoelectricity, including its historical context, fundamental operating principles, cutting-edge materials, and innovative strategies. In particular, the potential of one-dimensional nanostructuring is explored as a promising avenue for advancing thermoelectric technology. The concept of one-dimensional nanostructuring is extensively examined, encompassing various configurations and their impact on the thermoelectric properties of materials. The profound influence of one-dimensional nanostructuring on thermoelectric parameters is also thoroughly discussed. The review also provides a comprehensive overview of large-scale synthesis methods for one-dimensional thermoelectric materials, delving into the measurement of thermoelectric properties specific to such materials. Finally, the review concludes by outlining prospects and identifying potential directions for further advancements in the field.

All-in-One Optoelectronic Logic Gates Enabled by Bipolar Spectral Photoresponse of CdTe/SnSe Heterojunction

Optoelectronic logic gate devices (OLGDs) have attracted significant attention in high-density information processors; however, multifunctional logic operation in a single device is technically challenging due to the unidirectional electrical transport. In this work, we deliberately design all-in-one OLGDs based on self-powered CdTe/SnSe heterojunction photodetectors. The SnSe nanorod (NR) array is grown on the sputtered CdTe film via a glancing-angle deposition technique to form a heterojunction device. At the interface, the photovoltaic (PV) effect in the CdTe/SnSe heterojunction and the photothermoelectric (PTE) effect from the SnSe NRs are combined together to induce the reversed photocurrent, leading to a unique bipolar spectral response. The competition between PV and PTE in different spectral ranges is thus employed to control the photocurrent polarity, and five basic logic gates of OR, AND, NAND, NOR, and NOT can be performed just with a single heterojunction. Our findings indicate the large potentials of the CdTe/SnSe heterojunctions as logic units in next-generation sensing-computing systems.

New Progress on Fiber-Based Thermoelectric Materials: Performance, Device Structures and Applications

With the rapid development of wearable electronics, looking for flexible and wearable generators as their self-power systems has proved an extensive task. Fiber-based thermoelectric generators (FTEGs) are promising candidates for these self-powered systems that collect energy from the surrounding environment or human body to sustain wearable electronics. In this work, we overview performances and device structures of state-of-the-art fiber-based thermoelectric materials, including inorganic fibers (e.g., carbon fibers, oxide fibers, and semiconductor fibers), organic fibers, and hybrid fibers. Moreover, potential applications for related thermoelectric devices are discussed, and future developments in fiber-based thermoelectric materials are also briefly expected.

Inorganic Thermoelectric Fibers: A Review of Materials, Fabrication Methods, and Applications

Thermoelectric technology can directly harvest the waste heat into electricity, which is a promising field of green and sustainable energy. In this aspect, flexible thermoelectrics (FTE) such as wearable fabrics, smart biosensing, and biomedical electronics offer a variety of applications. Since the nanofibers are one of the important constructions of FTE, inorganic thermoelectric fibers are focused on here due to their excellent thermoelectric performance and acceptable flexibility. Additionally, measurement and microstructure characterizations for various thermoelectric fibers (Bi-Sb-Te, Ag₂Te, PbTe, SnSe and NaCo₂O₄) made by different fabrication methods, such as electrospinning, two-step anodization process, solution-phase deposition method, focused ion beam, and self-heated 3ω method, are detailed. This review further illustrates that some techniques, such as thermal drawing method, result in high performance of fiber-based thermoelectric properties, which can emerge in wearable devices and smart electronics in the near future.

Thermoelectric Properties of InA Nanowires from Full-Band Atomistic Simulations

In this work we theoretically explore the effect of dimensionality on the thermoelectric power factor of indium arsenide (InA) nanowires by coupling atomistic tight-binding calculations to the Linearized Boltzmann transport formalism. We consider nanowires with diameters from 40 nm (bulk-like) down to 3 nm close to one-dimensional (1D), which allows for the proper exploration of the power factor within a unified large-scale atomistic description across a large diameter range. We find that as the diameter of the nanowires is reduced below d < 10 nm, the Seebeck coefficient increases substantially, as a consequence of strong subband quantization. Under phonon-limited scattering conditions, a considerable improvement of ~6× in the power factor is observed around d = 10 nm. The introduction of surface roughness scattering in the calculation reduces this power factor improvement to ~2×. As the diameter is decreased to d = 3 nm, the power factor is diminished. Our results show that, although low effective mass materials such as InAs can reach low-dimensional behavior at larger diameters and demonstrate significant thermoelectric power factor improvements, surface roughness is also stronger at larger diameters, which takes most of the anticipated power factor advantages away. However, the power factor improvement that can be observed around d = 10 nm could prove to be beneficial as both the Lorenz number and the phonon thermal conductivity are reduced at that diameter. Thus, this work, by using large-scale full-band simulations that span the corresponding length scales, clarifies properly the reasons behind power factor improvements (or degradations) in low-dimensional materials. The elaborate computational method presented can serve as a platform to develop similar schemes for two-dimensional (2D) and three-dimensional (3D) material electronic structures.

Advanced Thermoelectric Design: From Materials and Structures to Devices

The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

Probing the path for achieving a broad temperature plateau of the figure of merit in thermoelectric nanocomposite materials

The efficiency of a thermoelectric device depends directly on the average figure of merit (zT) of the material. A high average zT requires a broad temperature plateau with a high zT, but state-of-the-art thermoelectric materials display a peaked zT over a narrow temperature range due to a strong temperature dependence of transport properties. In this work, using Boltzmann transport theory, we systematically investigate the underlying physics and propose a strategy for attaining a broad temperature plateau of zT through proper engineering of the interfacial barrier height in PbTe nanocomposite material. The optimized barrier height (U _constantzT) not only enhances the zT but also maintains its high value over a wide temperature range [T_min :T_max ]. It has been found that for p = 2.8 × 10²⁰ cm^-3, the U _constantzT is 0.112 eV at which zT varies between 1.9-2.14 over a wide temperature range of 550-850 K, resulting in a high average zT of 2.02 in comparison to a bulk value of 1.22. Also, for p = 5 × 10¹⁹ cm^-3, U_constantzT is 0.102 eV at which zT varies between 1.046-1.435 for a temperature range of 300-600K, resulting in a high average zT of 1.27 over a bulk value of 0.844. The above results show that the range [T_min :T_max ] depends on carrier concentration which, in turn, determines the position of the Fermi level (E_f ) and Fermi window at T_min and T_max . To obtain a broad temperature plateau of zT, the findings show that at T_min, E_f should lie inside the band and zT should show strong variation with barrier height, whereas at T_max , E_f should lie in the band gap and zT should have little variation with barrier height. This trend allows us to choose U_constantzT which synergistically optimizes the transport properties at T_min with T_max to give a broad temperature plateau of zT. This work proposes a new advantage of interfacial scattering which enhances the average zT and also provides necessary guidelines to experimentalists for synthesizing a highly efficient thermoelectric device.

Thermoelectrics of Nanowires

The field of thermoelectric research has undergone a renaissance and boom in the past two and a half decades, largely fueled by the prospect of engineering electronic and phononic properties in nanostructures, among which semiconductor nanowires (NWs) have served both as an important platform to investigate fundamental thermoelectric transport phenomena and as a promising route for high thermoelectric performance for diverse applications. In this Review, we provide a comprehensive look at various aspects of thermoelectrics of NWs. We start with a brief introduction of basic thermoelectric phenomena, followed by synthetic methods for thermoelectric NWs and a summary of their thermoelectric figures of merit (ZT). We then focus our discussion on charge and heat transport, which dictate thermoelectric power factor and thermal conductivity, respectively. For charge transport, we cover the basic principles governing the power factor and then review several strategies using NWs to enhance it, including earlier theoretical and experimental work on quantum confinement effects and semimetal-to-semiconductor transition, surface engineering and complex heterostructures to enhance the carrier mobility and power factor, and the recent emergence of topological insulator NWs. For phonon transport, we broadly categorize the work on thermal conductivity of NWs into five different effects: classic size effect, acoustic softening, surface roughness, complex NW morphology, and dimensional crossover. Finally, we discuss the integration of NWs for device applications for thermoelectric power generation and cooling. We conclude our review with some outlooks for future research.

Optimizing the average power factor of p-type (Na, Ag) co-doped polycrystalline SnSe

Despite the achievable high thermoelectric properties in SnSe single crystals, the poor mechanical properties and the relatively high cost of synthesis restrict the large scale commercial application of SnSe. Herein, we reported that co-doping with Na and Ag effectively improves the thermoelectric properties of polycrystalline SnSe. Temperature-dependent carrier mobility indicates that the grain boundary scattering is the dominant scattering mechanism near room temperature, giving rise to low electrical conductivity for the polycrystalline SnSe in comparison with that of the single crystal. Co-doping with Na and Ag improves the electrical conductivity of polycrystalline SnSe with a maximum value of 90.1 S cm⁻¹ at 323 K in Na_0.005Ag_0.015Sn_0.98Se, and the electrical conductivity of the (Na, Ag) co-doped samples is higher than that of the single doped samples over the whole temperature range (300–773 K). Considering the relatively high Seebeck coefficient of 335 μV K⁻¹ at 673 K and the minimum thermal conductivity of 0.48 W m⁻¹ K⁻¹ at 773 K, Na_0.005Ag_0.015Sn_0.98Se is observed to have the highest PF and ZT among the series of samples, with values of 0.50 mW cm⁻¹ K⁻² and 0.81 at 773 K, respectively. Its average PF and ZT are 0.43 mW cm⁻¹ K⁻² and 0.37, which is 92% and 68% higher than that of Na_0.02Sn_0.98Se, 40% and 43% higher than that of Ag_0.02Sn_0.98Se, and 304% and 277% higher than that of the previously reported SnSe, respectively.

(Na, Ag) co-doping combines the advantages of Ag and Na single doping in terms of the electronic properties.