Roles of Joule heating and spin-orbit torques in the direct current induced magnetization reversal

Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi2Se3 trilayers by Pt interfacial engineering

Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate for magnetoresistive random-access memory (MRAM) technology. However, the realization of high signal-to-noise output signal in USMR devices has remained a challenge, primarily due to the limited USMR effect at room temperature. In this study, we report a large USMR effect in FeNi/Pt/Bi₂Se₃ trilayers through interfacial engineering with Pt to optimize the spin current transmission efficiency and electron-magnon scattering. Our devices exhibit a USMR value that is an order of magnitude higher than previously reported systems, reaching 30.6 ppm/MA/cm² at room temperature. First-principles calculations and experimental observations suggest that the Pt layer not only preserves the spin-momentum locked topological surface states in Bi₂Se₃ at the Fermi-level but also generates additional Rashba surface states within the Pt itself to enhance the effective SOT efficiency. Furthermore, we demonstrate that the two-terminal USMR-MRAM devices show robust output performance with 2nd harmonic resistance variation around 0.11 Ω/mA. Remarkably, the performance of these devices further improves at elevated temperatures, highlighting their potential for reliable operation in a wide range of environmental conditions. Our findings pave the way for future advancements in high-performance, energy-efficient spintronic memory devices.

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo

Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to enhance the perpendicular magnetic anisotropy (PMA), thermal tolerance, and tunneling magnetoresistance. However, Mo is often considered as a less favorable candidate among SOT materials because of its weak spin-orbit coupling. In this study, we experimentally investigate the SOT efficiencies in Mo/CoFeB/MgO heterostructures over a wide range of Mo thicknesses and temperature. Decent damping-like SOT efficiency |ξDL| = 0.015 ± 0.001 and field-like SOT efficiency |ξFL| = 0.050 ± 0.001 are found in amorphous Mo. The ξFL/ξDL ratio is greater than 3. Furthermore, efficient current-induced magnetization switching is demonstrated with the critical current density comparable with heavy metal Ir and W. Our work reveals new understanding and possibilities for Mo as both an SOT source component and PMA buffer layer in the implementation of SOT-MRAMs.

Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9 × 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature.

Switching of Perpendicular Magnetization by Spin-Orbit Torque

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.

Exposure of the static magnetic fields on the microbial growth rate and the sludge properties in the complete-mix activated sludge process (a Lab-scale study)

BACKGROUND

In this study, the effect of static magnetic fields (SMFs) on improving the performance of activated sludge process to enhance the higher rate of microbial growth biomass and improve sludge settling characteristics in real operation conditions of wastewater treatment plants has been investigated. The effect of SMFs (15 mT), hydraulic retention time, SRT, aeration time on mixed liquor suspended solids (MLSS) concentrations, mixed liquor volatile suspended solids (MLVSS) concentrations, α-factor, and pH in the complete-mix activated sludge (CMAS) process during 30 days of the operation, were evaluated.

RESULTS

There were not any differences between the concentration of MLSS in the case (2148.8 ± 235.6 mg/L) and control (2260.1 ± 296.0 mg/L) samples, however, the mean concentration of MLVSS in the case (1463.4 ± 419.2 mg/L) was more than the control samples (1244.1 ± 295.5 mg/L). Changes of the concentration of MLVSS over time, follow the first and second-order reaction with and without exposure of SMFs respectively. Moreover, the slope of the line and, the mean of α-factor in the case samples were 6.255 and, - 0.001 higher than the control samples, respectively. Changes in pH in both groups of the reactors were not observed. The size of the sluge flocs (1.28 µm) and, the spectra of amid I' (1440 cm-1) and II' (1650 cm-1) areas related to hydrogenase bond in the case samples were higher than the control samples.

CONCLUSIONS

SMFs have a potential to being considered as an alternative method to stimulate the microbial growth rate in the aeration reactors and produce bioflocs with the higher density in the second clarifiers.

Nonuniform Current-Driven Formation and Displacement of the Magnetic Compensation Point in Variable-Width Nanoscale Ferrimagnets

Nano- and microstructures based on ferrimagnets can demonstrate high efficiency and dynamics of current-induced magnetization switching combined with high stability of spin textures such as bubble domains and skyrmions, which are of practical importance for the development of spintronics and spin-orbitronics. This set of features is usually associated with magnetic momentum or angular momentum compensation states. Here, we experimentally show that the compensation state can be realized locally using nonuniform Joule heating. This effect is observed in the variable-width current guide made of the ferrimagnetic W/Co76Tb24/Ru thin films, where the position of a region heated to the compensation temperature depends linearly on the current pulse amplitude. This approach makes it possible to observe the simultaneous coexistence of Co-dominant and Tb-dominant regions, where current pulses induce spin-orbit torques in opposite directions, leading to local magnetization switching. It is found that the position of a Néel domain wall constraining the switched region lies in the vicinity of the coordinate corresponding to the compensation point but does not coincide with it due to high mobility under the action of spin current. Our findings open an alternative approach for engineering of ferrimagnetic nanodevices with advanced properties for future applications in spintronics, spin-orbitronics, and nanoelectronics.

Anomalous Thermal-Assisted Spin-Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory

Spin-orbit torque (SOT) is widely considered as an effective route to manipulate magnetic order in spintronic devices. The low power consumption and long endurance demands from future computer architectures urgently require a reduction of the critical SOT switching current density, j_sw. However, except for searching for a SOT source with a high-spin Hall angle, few efficient mechanisms to reduce j_sw have been proposed. In this work, we achieved an anomalous thermal-assisted (TA) j_sw reduction in a Pt/Co/Tb heterostructure through engineering a ferrimagnetic Co/Tb interface. This j_sw reduction tendency is demonstrated to be strongly dependent on the thickness of Tb, t_Tb. When t_Tb reaches an optimal point (3 nm), a 74 K temperature increase will reduce j_sw by more than an order of magnitude (17 times). Comparison experiments and theoretical simulations indicate that this anomalous TA reduction behavior goes beyond the conventional SOT framework and originates from the temperature-sensitive ferrimagnetic interface. We further propose a multifunctional logic-in-memory device, where six different Boolean logic gates can be implemented, to demonstrate the application potential and energy efficiency of this TA SOT switching mechanism. Our work provides an effective alternative to reduce j_sw in SOT devices and may inspire future spintronic memory, logic, and high-frequency devices.

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

Interplay between Spin-Orbit Torques and Dzyaloshinskii-Moriya Interactions in Ferrimagnetic Amorphous Alloys

Ferrimagnetic thin films are attractive for low-power spintronic applications because of their low magnetization, small angular momentum, and fast spin dynamics. Spin orbit torques (SOT) can be applied with proximal heavy metals that also generate interfacial Dzyaloshinskii-Moriya interactions (DMI), which can stabilize ultrasmall skyrmions and enable fast domain wall motion. Here, the properties of a ferrimagnetic CoGd alloy between two heavy metals to increase the SOT efficiency, while maintaining a significant DMI is studied. SOT switching for various capping layers and alloy compositions shows that Pt/CoGd/(W or Ta) films enable more energy-efficient SOT magnetization switching than Pt/CoGd/Ir. Spin-torque ferromagnetic resonance confirms that Pt/CoGd/W has the highest spin-Hall angle of 16.5%, hence SOT efficiency, larger than Pt/CoGd/(Ta or Ir). Density functional theory calculations indicate that CoGd films capped by W or Ta have the largest DMI energy, 0.38 and 0.32 mJ m^-2 , respectively. These results show that Pt/CoGd/W is a very promising ferrimagnetic structure to achieve small skyrmions and to move them efficiently with current.

Orbitally dominated Rashba-Edelstein effect in noncentrosymmetric antiferromagnets

Efficient manipulation of magnetic order with electric current pulses is desirable for achieving fast spintronic devices. The Rashba-Edelstein effect, wherein spin polarization is electrically induced in noncentrosymmetric systems, provides a mean to achieve staggered spin-orbit torques. Initially predicted for spin, its orbital counterpart has been disregarded up to now. Here we report a generalized Rashba-Edelstein effect, which generates not only spin polarization but also orbital polarization, which we find to be far from being negligible. We show that the orbital Rashba-Edelstein effect does not require spin-orbit coupling to exist. We present first-principles calculations of the frequency-dependent spin and orbital Rashba-Edelstein tensors for the noncentrosymmetric antiferromagnets CuMnAs and Mn[Formula: see text]Au. We show that the electrically induced local magnetization can exhibit Rashba-like or Dresselhaus-like symmetries, depending on the magnetic configuration. We compute sizable induced magnetizations at optical frequencies, which suggest that electric-field driven switching could be achieved at much higher frequencies.