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Wang S, Fan P, Liu W, Hu B, Guo J, Wang Z, Zhu S, Zhao Y, Fan J, Li G, Xu L. Research Progress of Flexible Electronic Devices Based on Electrospun Nanofibers. ACS NANO 2024; 18:31737-31772. [PMID: 39499656 DOI: 10.1021/acsnano.4c13106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
Electrospun nanofibers have become an important component in fabricating flexible electronic devices because of their permeability, flexibility, stretchability, and conformability to three-dimensional curved surfaces. This review delves into the advancements in adaptable and flexible electronic devices using electrospun nanofibers as the substrates and explores their diverse and innovative applications. The primary development of key substrates for flexible devices is summarized. After briefly discussing the principle of electrospinning, process parameters that affect electrospinning, and two major electrospinning techniques (i.e., single-fluid electrospinning and multifluid electrospinning), the review shines a spotlight on the recent breakthroughs in multifunctional and stretchable electronic devices that are based on electrospun substrates. These advancements include flexible sensors, flexible energy harvesting and storage devices, flexible accessories for electronic devices, and flexible environmental monitoring devices. In particular, the review outlines the challenges and potential solutions of developing electrospun nanofibers for flexible electronic devices, including overcoming the incompatibility of multiple interfaces, developing 3D microstructure sensor arrays with gradient geometry for various imperceptible on-skin devices, etc. This review may provide a comprehensive understanding of the rational design of application-oriented flexible electronic devices based on electrospun nanofibers.
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Affiliation(s)
- Shige Wang
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, New Territories, Hong Kong SAR 999077, P. R. China
| | - Peng Fan
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Wenbo Liu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P. R. China
| | - Bin Hu
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Jiaxuan Guo
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Zizhao Wang
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Shengke Zhu
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Yipu Zhao
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, New Territories, Hong Kong SAR 999077, P. R. China
| | - Jinchen Fan
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Guisheng Li
- School of Materials and Chemistry, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, P. R. China
| | - Lizhi Xu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR 999077, P. R. China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science Park, Shatin, New Territories, Hong Kong SAR 999077, P. R. China
- Materials Innovation Institute for Life Sciences and Energy (MILES), The University of Hong Kong Shenzhen Institute of Research and Innovation (HKU-SIRI), Shenzhen 518057, P. R. China
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Choi GS, Bae EJ, Ju BK, Park YW. Enhancing Light Extraction Efficiency in OLED Using Scattering Structure-Embedded DMD-Based Transparent Composite Electrodes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2253. [PMID: 37570570 PMCID: PMC10421309 DOI: 10.3390/nano13152253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 07/30/2023] [Accepted: 08/03/2023] [Indexed: 08/13/2023]
Abstract
This study investigates the application of scattering structures to the metal layer in a DMD (Dielectric/Metal/Dielectric) configuration through plasma treatment. The purpose is to enhance the light extraction efficiency of organic light-emitting diodes (OLEDs). Different plasma conditions were explored to create scattering structures on the metal layer. The fabricated devices were characterized for their electrical and optical properties. The results demonstrate that the introduction of scattering structures through plasma treatment effectively improves the light extraction efficiency of OLEDs. Specifically, using O2-plasma treatment on the metal layer resulted in significant enhancements in the total transmittance, haze, and figure of merit. These findings suggest that incorporating scattering structures within the DMD configuration can effectively promote light extraction in OLEDs, leading to enhanced overall performance and light efficiency.
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Affiliation(s)
- Geun-Su Choi
- Nano and Organic-Electronics Laboratory, SunMoon University, Asan 31460, Republic of Korea; (G.-S.C.)
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seoul 02841, Republic of Korea
| | - Eun-Jeong Bae
- Nano and Organic-Electronics Laboratory, SunMoon University, Asan 31460, Republic of Korea; (G.-S.C.)
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seoul 02841, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, Department of Electrical Engineering, Korea University, 145, Anam-ro, Seoul 02841, Republic of Korea
| | - Young-Wook Park
- Nano and Organic-Electronics Laboratory, SunMoon University, Asan 31460, Republic of Korea; (G.-S.C.)
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Xu H, Cao C, Shui X, Gu J, Sun Y, Ding L, Lin Y, Shi W, Wei B. Discrimination and control of the exciton-recombination region of thermal-stressed blue organic light-emitting diodes. Phys Chem Chem Phys 2023; 25:2742-2746. [PMID: 36644939 DOI: 10.1039/d2cp05600c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Organic light-emitting diodes (OLEDs) suffer from carrier imbalance under high temperatures. We improved their thermal stability by using space interlayers adjacent to the charge transport layers. The current efficiency of the optimized OLEDs increased under high temperature, with an increase of over one order of magnitude of the electron mobility.
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Affiliation(s)
- Hanfei Xu
- School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
| | - Chenhui Cao
- Anhui Sholon New Material Technology Co., Ltd., Chuzhou, Anhui Province, 239500, China
| | - Xinfeng Shui
- Anhui Sholon New Material Technology Co., Ltd., Chuzhou, Anhui Province, 239500, China
| | - Jialu Gu
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China.
| | - Yanqiu Sun
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, 215009, China.
| | - Lei Ding
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, 215009, China.
| | - Yang Lin
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China.
| | - Wei Shi
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China.
| | - Bin Wei
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China.
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Ilatovskii DA, Gilshtein EP, Glukhova OE, Nasibulin AG. Transparent Conducting Films Based on Carbon Nanotubes: Rational Design toward the Theoretical Limit. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201673. [PMID: 35712777 PMCID: PMC9405519 DOI: 10.1002/advs.202201673] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Revised: 05/22/2022] [Indexed: 05/19/2023]
Abstract
Electrically conductive thin-film materials possessing high transparency are essential components for many optoelectronic devices. The advancement in the transparent conductor applications requires a replacement of indium tin oxide (ITO), one of the key materials in electronics. ITO and other transparent conductive metal oxides have several drawbacks, including poor flexibility, high refractive index and haze, limited chemical stability, and depleted raw material supply. Single-walled carbon nanotubes (SWCNTs) are a promising alternative for transparent conducting films (TCFs) because of their unique and excellent chemical and physical properties. Here, the latest achievements in the optoelectronic performance of TCFs based on SWCNTs are analyzed. Various approaches to evaluate the performance of transparent electrodes are briefly reviewed. A roadmap for further research and development of the transparent conductors using "rational design," which breaks the deadlock for obtaining the TCFs with a performance close to the theoretical limit, is also described.
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Affiliation(s)
- Daniil A. Ilatovskii
- Skolkovo Institute of Science and TechnologyNobel Str. 3Moscow143026Russian Federation
| | - Evgeniia P. Gilshtein
- Empa‐Swiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129Dübendorf8600Switzerland
| | - Olga E. Glukhova
- Saratov State UniversityAstrakhanskaya Str. 83Saratov410012Russian Federation
- I.M. Sechenov First Moscow State Medical UniversityBolshaya Pirogovskaya Str. 2–4Moscow119991Russian Federation
| | - Albert G. Nasibulin
- Skolkovo Institute of Science and TechnologyNobel Str. 3Moscow143026Russian Federation
- Aalto UniversityEspooFI‐00076Finland
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Ciobotaru IC, Polosan S, Enculescu M, Nitescu A, Enculescu I, Beregoi M, Ciobotaru CC. Charge transport mechanisms in free-standing devices with electrospun electrodes. NANOTECHNOLOGY 2022; 33:395203. [PMID: 35728559 DOI: 10.1088/1361-6528/ac7ac1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Embedding electronic and optoelectronic devices in common, daily use objects is a fast developing field of research. New architectures are needed for migrating from the classic wafer- based substrates. Novel types of flexible PMMA/Au/Alq3/LiF/Al structures were obtained starting from electrospun polymer fibers. Thus, using an electrospinning process poly (methyl metacrylate) (PMMA) nanofibers were fabricated. A thin Au layer deposition rendered the fiber array conductive, this being further employed as the anode. The next steps consisted of the thermal evaporation of tris(8-hydroxyquinolinato) aluminum (Alq3) and aluminum deposition as the cathode. The Au covered PMMA nanofiber layer had a similar behavior with an indium tin oxide film i.e. low sheet resistance 10.6 Ω/sq and high transparency. The low electrode resistivities allow an electron drift mobility of about 10-6cm2V-1s-1at a low applied field, similar to the counterpart structures based on thin films. Concerning the relaxation processes in these structures, the Cole-Cole plots exhibit a slightly deformed semicircle, indicating a more complex equivalent circuit for the processes between metal electrodes and the active layer. This equivalent circuit includes reactance equivalent processes at the anode, cathode, in the active layer and most probably originates from the roughness of the metallic electrodes.
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Affiliation(s)
| | - Silviu Polosan
- National Institute of Materials Physics, Magurele, PO Box MG 7, Romania
| | - Monica Enculescu
- National Institute of Materials Physics, Magurele, PO Box MG 7, Romania
| | - Andrei Nitescu
- National Institute of Materials Physics, Magurele, PO Box MG 7, Romania
| | - Ionut Enculescu
- National Institute of Materials Physics, Magurele, PO Box MG 7, Romania
| | - Mihaela Beregoi
- National Institute of Materials Physics, Magurele, PO Box MG 7, Romania
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Oh J, Wen L, Tak H, Kim H, Kim G, Hong J, Chang W, Kim D, Yeom G. Radio Frequency Induction Welding of Silver Nanowire Networks for Transparent Heat Films. MATERIALS (BASEL, SWITZERLAND) 2021; 14:4448. [PMID: 34442970 PMCID: PMC8400299 DOI: 10.3390/ma14164448] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 08/04/2021] [Accepted: 08/05/2021] [Indexed: 11/24/2022]
Abstract
Transparent heat films (THFs) are attracting increasing attention for their usefulness in various applications, such as vehicle windows, outdoor displays, and biosensors. In this study, the effects of induction power and radio frequency on the welding characteristics of silver nanowires (Ag NWs) and Ag NW-based THFs were investigated. The results showed that higher induction frequency and higher power increased the welding of the Ag NWs through the nano-welding at the junctions of the Ag NWs, which produced lower sheet resistance, and improved the adhesion of the Ag NWs. Using the inductive welding condition of 800 kHz and 6 kW for 60 s, 100 ohm/sq of Ag NW thin film with 95% transmittance at 550 nm after induction heating could be decreased to 56.13 ohm/sq, without decreasing the optical transmittance. In addition, induction welding of the Ag NW-based THFs improved haziness, increased bending resistance, enabled higher operating temperature at a given voltage, and improved stability.
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Affiliation(s)
- Jisoo Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Long Wen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Hyunwoo Tak
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Heeju Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Gyowun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Jongwoo Hong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Wonjun Chang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Dongwoo Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
| | - Geunyoung Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.O.); (L.W.); (H.T.); (H.K.); (G.K.); (J.H.); (W.C.); (D.K.)
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
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Research Progress of Transparent Electrode Materials with Sandwich Structure. MATERIALS 2021; 14:ma14154097. [PMID: 34361291 PMCID: PMC8348534 DOI: 10.3390/ma14154097] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/03/2021] [Revised: 07/12/2021] [Accepted: 07/15/2021] [Indexed: 12/23/2022]
Abstract
The nonrenewable nature of fossil energy has led to a gradual decrease in reserves. Meanwhile, as society becomes increasingly aware of the severe pollution caused by fossil energy, the demand for clean energy, such as solar energy, is rising. Moreover, in recent years, electronic devices with screens, such as mobile phones and computers, have had increasingly higher requirements for light transmittance. Whether in solar cells or in the display elements of electronic devices, transparent conductive films directly affect the performance of these devices as a cover layer. In this context, the development of transparent electrodes with low sheet resistance and high light transmittance has become one of the most urgent issues in related fields. At the same time, conventional electrodes can no longer meet the needs of some of the current flexible devices. Because of the high sheet resistance, poor light transmittance, and poor bending stability of the conventional tin-doped indium tin oxide conductive film and fluorine-doped tin oxide transparent conductive glass, there is a need to find alternatives with better performance. In this article, the progress of research on transparent electrode materials with sandwich structures and their advantages is reviewed according to the classification of conductive materials to provide reference for research in related fields.
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Park JH, Kim CH, Lee JH, Kim HK. Transparent and Flexible SiOC Films on Colorless Polyimide Substrate for Flexible Cover Window. MICROMACHINES 2021; 12:233. [PMID: 33668908 PMCID: PMC7996484 DOI: 10.3390/mi12030233] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2021] [Revised: 02/17/2021] [Accepted: 02/18/2021] [Indexed: 11/16/2022]
Abstract
We fabricated transparent and flexible silicon oxycarbide (SiOC) hard coating (HC) films on a colorless polyimide substrate to use as cover window films for flexible and foldable displays using a reactive roll-to-roll (R2R) sputtering system at room temperature. At a SiOC thickness of 100 nm, the R2R-sputtered SiOC film showed a high optical transmittance of 87.43% at a visible range of 400 to 800 nm. The R2R-sputtered SiOC films also demonstrated outstanding flexibility, which is a key requirement of foldable and flexible displays. There were no cracks or surface defects on the SiOC films, even after bending (static folding), folding (dynamic folding), twisting, and rolling tests. Furthermore, the R2R-sputtered SiOC film showed good scratch resistance in a pencil hardness test (550 g) and steel wool test under a load of 250 g. To test the impact protection ability, we compared the performance of thin-film heaters (TFHs) and oxide-semiconductor-based thin-film transistors (TFTs) with and without SiOC cover films. The similar performance of the TFHs and TFTs with the SiOC cover window films demonstrate that the R2R-sputtered SiOC films offer promising cover window films for the next generation of flexible or foldable displays.
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Affiliation(s)
| | | | | | - Han-Ki Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Korea; (J.-H.P.); (C.-H.K.); (J.-H.L.)
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Im HG, Jang J, Jeon Y, Noh J, Jin J, Lee JY, Bae BS. Flexible Transparent Crystalline-ITO/Ag Nanowire Hybrid Electrode with High Stability for Organic Optoelectronics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56462-56469. [PMID: 33258583 DOI: 10.1021/acsami.0c17130] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal nanowires (NWs) are promising transparent conducting electrode (TCE) materials because of their excellent optoelectrical performance, intrinsic mechanical flexibility, and large-scale processability. However, the surface roughness, thermal/chemical instability, and limited electrical conductivity associated with empty spaces between metal NWs are problems that are yet to be solved. Here, we report a highly reliable and robust composite TCE/substrate all-in-one platform that consists of crystalline indium tin oxide (c-ITO) top layer and surface-embedded metal NW (c-ITO/AgNW-GFRH) films for flexible optoelectronics. The c-ITO top layer (thickness: 10-30 nm) greatly improves the electrical performance of a AgNW-based electrode, retaining its transparency even after a high-temperature annealing process at 250 °C because of its thermally stable basal substrate (i.e., AgNW-GFRH). By introducing c-ITO thin film, we achieve an extremely smooth surface (Rrms < 1 nm), excellent optoelectrical performance, superior thermal (> 250 °C)/chemical stability (in sulfur-contained solution), and outstanding mechanical flexibility (bending radius = 1 mm). As a demonstration, we fabricate flexible organic devices (organic photovoltaic and organic light-emitting diode) on c-ITO/AgNW-GFRH films that show device performance comparable to that of references ITO/glass substrates and superior mechanical flexibility. With excellent stability and demonstrations, we expect that the c-ITO/AgNW-GFRHs can be used as flexible TCE/substrate films for future thin-film optoelectronics.
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Affiliation(s)
- Hyeon-Gyun Im
- Electrical Materials Research Division, Korea Electrotechnology Research Institute (KERI), Changwon-si 51543, Republic of Korea
| | - Junho Jang
- Wearable Platform Materials Technology Center (WMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yeonjee Jeon
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Jonghyeon Noh
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Jungho Jin
- School of Materials Science and Engineering, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering, KAIST, Daejeon 34141, Republic of Korea
| | - Byeong-Soo Bae
- Wearable Platform Materials Technology Center (WMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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Ag-fiber/graphene hybrid electrodes for highly flexible and transparent optoelectronic devices. Sci Rep 2020; 10:5117. [PMID: 32198465 PMCID: PMC7083935 DOI: 10.1038/s41598-020-62056-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/05/2019] [Accepted: 03/02/2020] [Indexed: 11/08/2022] Open
Abstract
Transparent conducting electrodes (TCEs) have attracted considerable attention towards the development of flexible optoelectronic devices. In this study, mixed-dimensional TCEs are fabricated based on the two-dimensional graphene and one-dimensional electrospun metal fiber that can address the shortcomings of each electrode. In comparison with other TCEs, the Ag fiber/graphene hybrid electrodes exhibited a highly stable morphology (67% lower peak-to-valley ratio), low sheet resistance (approximately 11 Ω/sq), high transmittance (approximately 94%), high oxidation stability with excellent flexibility, and outstanding chemical stability. The multiple functionalities of the transparent and flexible hybrid structure highlight its potential for applications in emerging electronics and highly stable optoelectronics.
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Jiang X, Song Z, Liu G, Ma Y, Wang A, Guo Y, Du Z. AgNWs/AZO composite electrode for transparent inverted ZnCdSeS/ZnS quantum dot light-emitting diodes. NANOTECHNOLOGY 2020; 31:055201. [PMID: 31614340 DOI: 10.1088/1361-6528/ab4dcd] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Fully transparent inverted quantum dot light-emitting diodes (QLEDs) were fabricated by incorporating a Ag-nanowire-based anode. Aluminum-doped zinc oxide (ZnO:Al, AZO) was inserted by atomic layer deposition and reduced the sheet resistance by promoting adhesion of Ag nanowires (AgNWs) film and increasing its chemical stability towards oxygen. The performance of the QLEDs was optimal when the thickness of AZO was 20 nm. The current efficiency of the fully transparent inverted QLEDs integrated with the AgNWs/AZO anode reached 15.33 cd A-1. The main peak wavelength and optical transmittance of the inverted QLEDs were 530 nm and 75.66%, respectively. This discovery is expected to provide a basic method for the production of flexible displays with full transparency by AgNWs-based electrodes.
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Affiliation(s)
- Xiaohong Jiang
- Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, People's Republic of China
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