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Yuan Y, Kotiuga M, Park TJ, Patel RK, Ni Y, Saha A, Zhou H, Sadowski JT, Al-Mahboob A, Yu H, Du K, Zhu M, Deng S, Bisht RS, Lyu X, Wu CTM, Ye PD, Sengupta A, Cheong SW, Xu X, Rabe KM, Ramanathan S. Hydrogen-induced tunable remanent polarization in a perovskite nickelate. Nat Commun 2024; 15:4717. [PMID: 38830914 DOI: 10.1038/s41467-024-49213-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 05/28/2024] [Indexed: 06/05/2024] Open
Abstract
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing ferroelectric materials and electrets using light-ion doping.
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Affiliation(s)
- Yifan Yuan
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA.
| | - Michele Kotiuga
- Theory and Simulation of Materials (THEOS), National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
| | - Tae Joon Park
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
| | - Ranjan Kumar Patel
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Yuanyuan Ni
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA
| | - Arnob Saha
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, State College, PA, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA
| | - Jerzy T Sadowski
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | - Abdullah Al-Mahboob
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA
| | - Kai Du
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Minning Zhu
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Sunbin Deng
- School of Materials Engineering, Purdue University, West Lafayette, IN, USA
| | - Ravindra S Bisht
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Xiao Lyu
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Chung-Tse Michael Wu
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Peide D Ye
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Abhronil Sengupta
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, State College, PA, USA
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Xiaoshan Xu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA
| | - Karin M Rabe
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, USA
| | - Shriram Ramanathan
- Department of Electrical & Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA.
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Cho H, Jin HJ, Lee S, Jeon S, Cho Y, Park S, Jang M, Widiapradja LJ, Ryu DY, Park JH, Kim K, Im S. 5 nm Ultrathin Crystalline Ferroelectric P(VDF-TrFE)-Brush Tuned for Hysteresis-Free Sub 60 mV dec -1 Negative-Capacitance Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300478. [PMID: 36940281 DOI: 10.1002/adma.202300478] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Revised: 02/23/2023] [Indexed: 06/02/2023]
Abstract
Negative-capacitance field-effect transistors (NC-FETs) have gathered enormous interest as a way to reduce subthreshold swing (SS) and overcome the issue of power dissipation in modern integrated circuits. For stable NC behavior at low operating voltages, the development of ultrathin ferroelectrics (FE), which are compatible with the industrial process, is of great interest. Here, a new scalable ultrathin ferroelectric polymer layer is developed based on trichloromethyl (CCl3 )-terminated poly(vinylidene difluoride-co-trifloroethylene) (P(VDF-TrFE)) to achieve the state-of-the-art performance of NC-FETs. The crystalline phase of 5-10 nm ultrathin P(VDF-TrFE) is prepared on AlOX by a newly developed brush method, which enables an FE/dielectric (DE) bilayer. FE/DE thickness ratios are then systematically tuned at ease to achieve ideal capacitance matching. NC-FETs with optimized FE/DE thickness at a thickness limit demonstrate hysteresis-free operation with an SS of 28 mV dec-1 at ≈1.5 V, which competes with the best reports. This P(VDF-TrFE)-brush layer can be broadly adapted to NC-FETs, opening an exciting avenue for low-power devices.
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Affiliation(s)
- Hyunmin Cho
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hye-Jin Jin
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sol Lee
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, 03722, Republic of Korea
| | - Seungbae Jeon
- Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Yongjae Cho
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sam Park
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Myeongjin Jang
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, 03722, Republic of Korea
| | - Livia Janice Widiapradja
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Du Yeol Ryu
- Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Ji Hoon Park
- Department of Electronics and Electrical Engineering, Dankook University, Yongin, Gyeonggi-do, 16890, Republic of Korea
| | - Kwanpyo Kim
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, 03722, Republic of Korea
| | - Seongil Im
- Van der Waals, Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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