Optical thermometry based on level anticrossing in silicon carbide

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Over the past decades, spin qubits in silicon carbide (SiC) have emerged as promising platforms for a wide range of quantum technologies. The fluorescence intensity holds significant importance in the performance of quantum photonics, quantum information process, and sensitivity of quantum sensing. In this work, a dual-layer Au/SiO2 dielectric cavity is employed to enhance the fluorescence intensity of a shallow silicon vacancy ensemble in 4H-SiC. Experimental results demonstrate an effective fourfold augmentation in fluorescence counts at saturating laser power, corroborating our theoretical predictions. Based on this, we further investigate the influence of dielectric cavities on the contrast and linewidth of optically detected magnetic resonance (ODMR). There is a 1.6-fold improvement in magnetic field sensitivity. In spin echo experiments, coherence times remain constant regardless of the thickness of dielectric cavities. These experiments pave the way for broader applications of dielectric cavities in SiC-based quantum technologies.

Luminescence Thermometry Beyond the Biological Realm

As the field of luminescence thermometry has matured, practical applications of luminescence thermometry techniques have grown in both frequency and scope. Due to the biocompatibility of most luminescent thermometers, many of these applications fall within the realm of biology. However, luminescence thermometry is increasingly employed beyond the biological realm, with expanding applications in areas such as thermal characterization of microelectronics, catalysis, and plasmonics. Here, we review the motivations, methodologies, and advances linked to nonbiological applications of luminescence thermometry. We begin with a brief overview of luminescence thermometry probes and techniques, focusing on those most commonly used for nonbiological applications. We then address measurement capabilities that are particularly relevant for these applications and provide a detailed survey of results across various application categories. Throughout the review, we highlight measurement challenges and requirements that are distinct from those of biological applications. Finally, we discuss emerging areas and future directions that present opportunities for continued research.

Quantum systems in silicon carbide for sensing applications

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

High-sensitivity silicon carbide divacancy-based temperature sensing

Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature-range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing time of the color centers. In this work, we developed a high-sensitivity silicon carbide divacancy-based thermometer using the thermal Carr-Purcell-Meiboom-Gill (TCPMG) method. First, the zero-field splitting D of the PL6 divacancy as a function of temperature was measured with a linear slope of -99.7 kHz K^-1. The coherence times of TCPMG pulses linearly increased with the pulse number and the longest coherence time was about 21 μs, which was ten times higher than . The corresponding temperature-sensing sensitivity was 13.4 mK Hz^-1/2, which was about 15 times higher than previous results. Finally, we monitored the laboratory temperature variations for 24 hours using the TCMPG pulse. The experiments pave the way for the application of silicon carbide-based high-sensitivity thermometers in the semiconductor industry, biology, and materials sciences.

Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide

Pressure-induced magnetic phase transitions are attracting interest as a means to detect superconducting behaviour at high pressures in diamond anvil cells, but determining the local magnetic properties of samples is a challenge due to the small volumes of sample chambers. Optically detected magnetic resonance of nitrogen vacancy centres in diamond has recently been used for the in situ detection of pressure-induced phase transitions. However, owing to their four orientation axes and temperature-dependent zero-field splitting, interpreting these optically detected magnetic resonance spectra remains challenging. Here we study the optical and spin properties of implanted silicon vacancy defects in 4H-silicon carbide that exhibit single-axis and temperature-independent zero-field splitting. Using this technique, we observe the magnetic phase transition of Nd2Fe14B at about 7 GPa and map the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.6. These results highlight the potential of silicon vacancy-based quantum sensors for in situ magnetic detection at high pressures.

Fiber-integrated silicon carbide silicon-vacancy-based magnetometer

Silicon vacancies in silicon carbide have drawn much attention for various types of quantum sensing. However, most previous experiments are realized using confocal scanning systems, which limits their practical applications. In this work, we demonstrate a compact fiber-integrated silicon carbide silicon-vacancy-based magnetometer at room temperature. First, we effectively couple the silicon vacancy in a tiny silicon carbide slice with an optical fiber tip and realize the readout of the spin signal through the fiber at the same time. We then study the optically detected magnetic resonance spectra at different laser and microwave powers, obtaining an optimized magnetic field sensitivity of 12.3 μT/Hz ¹². Based on this, the magnetometer is used to measure the strength and polar angle of an external magnetic field. Through these experiments, we have paved the way for fiber-integrated silicon-vacancy-based magnetometer applications in practical environments, such as geophysics and biomedical sensing.

Nanothermometry with Enhanced Sensitivity and Enlarged Working Range Using Diamond Sensors

Nanothermometry is increasingly demanded in frontier research in physics, chemistry, materials science and engineering, and biomedicine. An ideal thermometer should have features of reliable temperature interpretation, high sensitivity, fast response, minimum disturbance of the target's temperature, applicability in a variety of environments, and a large working temperature range. For applications in nanosystems, high spatial resolution is also desirable. Such requirements impose great challenges in nanothermometry since the shrinking of the sensor volume usually leads to a reduction in sensitivity.Diamond with nitrogen-vacancy (NV) centers provides opportunities for nanothermometry. NV center spins have sharp resonances due to their superb coherence. NV centers are multimodal sensors. They can directly sense magnetic fields, electric fields, temperature, pressure, and nuclear spins and, through proper transduction, measure other quantities such as the pH and deformation. In particular, their spin resonance frequencies vary with temperature, making them a promising thermometer. The high thermal conductivity, high hardness, chemical stability, and biocompatibility of diamond enable reliable and fast temperature sensing in complex environments ranging from erosive liquids to live systems. Chemical processing of diamond surfaces allows various functionalities such as targeting. The small size and the targeting capability of nanodiamonds then enable site-specific temperature sensing with nanoscale spatial resolution. However, the sensitivity of NV-based nanothermometry is yet to meet the requirement of practical systems with a large gap of a few orders of magnitude. On the other hand, although NV-based quantum sensing works well from 0.3 to 600 K, extending the sensing scheme to high temperature remains challenging due to uncertainty in identifying the exact physical limits and possible solution at elevated temperatures.This Account focuses on our efforts to enhance the temperature sensitivity and widen the working temperature range of diamond-based nanothermometry. We start with explaining the working principle and features of NV-based thermometry with examples of applications. Then a transducer-based concept is introduced with practical schemes to improve the sensitivity of the nanodiamond thermometer. Specifically, we show that the temperature signal can be transduced and amplified by adopting hybrid structures of nanodiamond and magnetic nanoparticles, which results in a record temperature sensitivity of 76 μK/√Hz. We also demonstrate quantum sensing with NV at high temperatures of up to 1000 K by adopting a pulsed heating-cooling scheme to carry out the spin polarization and readout at room temperature and the spin manipulation (sensing) at high temperatures. Finally, unsolved problems and future endeavors of diamond nanothermometry are discussed.

Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications

Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 10⁹ photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 10⁷ photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.

Acoustically induced coherent spin trapping

Spin centers are promising qubits for quantum technologies. Here, we show that the acoustic manipulation of spin qubits in their electronic excited state provides an approach for coherent spin control inaccessible so far. We demonstrate a giant interaction between the strain field of a surface acoustic wave (SAW) and the excited-state spin of silicon vacancies in silicon carbide, which is about two orders of magnitude stronger than in the ground state. The simultaneous spin driving in the ground and excited states with the same SAW leads to the trapping of the spin along a direction given by the frequency detuning from the corresponding spin resonances. The coherence of the spin-trapped states becomes only limited by relaxation processes intrinsic to the ground state. The coherent acoustic manipulation of spins in the ground and excited state provides new opportunities for efficient on-chip quantum information protocols and coherent sensing.

Diamond quantum thermometry: from foundations to applications

Diamond quantum thermometry exploits the optical and electrical spin properties of colour defect centres in diamonds and, acts as a quantum sensing method exhibiting ultrahigh precision and robustness. Compared to the existing luminescent nanothermometry techniques, a diamond quantum thermometer can be operated over a wide temperature range and a sensor spatial scale ranging from nanometres to micrometres. Further, diamond quantum thermometry is employed in several applications, including electronics and biology, to explore these fields with nanoscale temperature measurements. This review covers the operational principles of diamond quantum thermometry for spin-based and all-optical methods, material development of diamonds with a focus on thermometry, and examples of applications in electrical and biological systems with demand-based technological requirements.

Robust coherent control of solid-state spin qubits using anti-Stokes excitation

Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing.

Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.

The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide optoelectronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

An efficient Terahertz rectifier on the graphene/SiC materials platform

We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.

Laser Writing of Scalable Single Color Centers in Silicon Carbide

Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems ( Awschalom et al. Nat. Photonics 2018 , 12 , 516 - 527 ; Atatüre et al. Nat. Rev. Mater. 2018 , 3 , 38 - 51 ). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (V_Si) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single V_Si centers with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing V_Si centers and concluded that there are about 16 photons involved in the laser writing V_Si center process. Our results represent a powerful tool in the fabrication of single V_Si centers in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

Constructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material's stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin-echo coherence time of 42 ± 20 μs at room temperature. Our approach hence enables the fabrication of quantum hybrid nanodevices based on SiC platform, where spin centers are integrated into p-i-n diodes, photonic cavities, and mechanical resonators.

Fluorescent color centers in laser ablated 4H-SiC nanoparticles

Nanostructured and bulk silicon carbide (SiC) has recently emerged as a novel platform for quantum nanophotonics due to its harboring of paramagnetic color centers, having immediate applications as a single photon source and spin optical probes. Here, using ultra-short pulsed laser ablation, we fabricated from electron irradiated bulk 4H-SiC, 40-50 nm diameter SiC nanoparticles, fluorescent at 850-950 nm. This photoluminescence is attributed to the silicon vacancy color centers. We demonstrate that the original silicon vacancy color centers from the target sample were retained in the final nanoparticles solution, exhibiting excellent colloidal stability in water over several months. Our work is relevant for quantum nanophotonics, magnetic sensing, and biomedical imaging applications.

A review on single photon sources in silicon carbide

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

In Situ Growth of Core-Sheath Heterostructural SiC Nanowire Arrays on Carbon Fibers and Enhanced Electromagnetic Wave Absorption Performance

Large-scale core-sheath heterostructural SiC nanowires were facilely grown on the surface of carbon fibers using a one-step chemical vapor infiltration process. The as-synthesized SiC nanowires consist of single crystalline SiC cores with a diameter of ∼30 nm and polycrystalline SiC sheaths with an average thickness of ∼60 nm. The formation mechanisms of core-sheath heterostructural SiC nanowires (SiC_nws) were discussed in detail. The SiC_nws-CF shows strong electromagnetic (EM) wave absorption performance with a maximum reflection loss value of -45.98 dB at 4.4 GHz. Moreover, being coated with conductive polymer polypyrrole (PPy) by a simple chemical polymerization method, the SiC_nws-CF/PPy nanocomposites exhibited superior EM absorption abilities with maximum RL value of -50.19 dB at 14.2 GHz and the effective bandwidth of 6.2 GHz. The SiC_nws-CF/PPy nanocomposites in this study are very promising as absorber materials with strong electromagnetic wave absorption performance.