Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

Elucidating the Role of Electron Transfer in the Photoluminescence of MoS2 Quantum Dots Synthesized by fs-Pulse Ablation

Herein, MoS2 quantum dots (QDs) with controlled optical, structural, and electronic properties are synthesized using the femtosecond pulsed laser ablation in liquid (fs-PLAL) technique by varying the pulse width, ablation power, and ablation time to harness the potential for next-generation optoelectronics and quantum technology. Furthermore, this work elucidates key aspects of the mechanisms underlying the near-UV and blue emissions the accompanying large Stokes shift, and the consequent change in sample color with laser exposure parameters pertaining to MoS2 QDs. Through spectroscopic analysis, including UV-visible absorption, photoluminescence, and Raman spectroscopy, we successfully unraveled the mechanisms for the change in optoelectronic properties of MoS2 QDs with laser parameters. We realize that the occurrence of a secondary phase, specifically MoO3-x, is responsible for the significant Stokes shift and blue emission observed in this QD system. The primary factor influencing these activities is the electron transfer observed between these two phases, as validated by excitation-dependent photoluminescence and XPS and Raman spectroscopies.

Selective Tumor Hypoxia Targeting Using M75 Antibody Conjugated Photothermally Active MoOx Nanoparticles

Photothermal therapy (PTT) mediated at the nanoscale has a unique advantage over currently used cancer treatments, by being spatially highly specific and minimally invasive. Although PTT combats traditional tumor treatment approaches, its clinical implementation has not yet been successful. The reasons for its disadvantage include an insufficient treatment efficiency or low tumor accumulation. Here, we present a promising new PTT platform combining a recently emerged two-dimensional (2D) inorganic nanomaterial, MoOx, and a tumor hypoxia targeting element, the monoclonal antibody M75. M75 specifically binds to carbonic anhydrase IX (CAIX), a hypoxia marker associated with many solid tumors with a poor prognosis. The as-prepared nanoconjugates showed highly specific binding to cancer cells expressing CAIX while being able to produce significant photothermal yield after irradiation with near-IR wavelengths. Small aminophosphonic acid linkers were recognized to be more effective over the combination of poly(ethylene glycol) chain and biotin-avidin-biotin bridge in constructing a PTT platform with high tumor-binding efficacy. The in vitro cellular uptake of nanoconjugates was visualized by high-resolution fluorescence microscopy and label-free live cell confocal Raman microscopy. The key to effective cancer treatment may be the synergistic employment of active targeting and noninvasive, tumor-selective therapeutic approaches, such as nanoscale-mediated PTT. The use of active targeting can streamline nanoparticle delivery increasing photothermal yield and therapeutic success.

A Two-Step Femtosecond Laser-Based Deposition of Robust Corrosion-Resistant Molybdenum Oxide Coating

A two-step femtosecond-pulsed laser deposition (fs-PLD) process is reported for the rapid development of uniform, poreless, crack-free, and well-adhering amorphous coatings of source materials with a high melting point. The first step comprises a high-rate raw deposition of the source material via fs-PLD, followed by a second step of scanning the raw sample with fs laser pulses of optimized fluence and scan parameters. The technique is applied to develop substoichiometric molybdenum oxide (MoO_x, x < 3) coatings on mild steel. The thickness of the layer was ~4.25 μm with roughness around 0.27 μm. Comprehensive surface characterization reveals highly uniform and relatively moderate roughness coatings, implying the potential of these films as robust corrosion-resistant coats. Corrosion measurements in an aqueous NaCl environment revealed that the coated mild steel samples possess an average corrosion inhibition efficiency of around 95% relative to polished mild steel.

A Nickel Coated Copper Substrate as a Hydrogen Evolution Catalyst

Replacing precious metals with low-cost metals is the best solution for large scale production. Copper is known for its excellent conductivity and thermal management applications. When it comes to hydrogen evolution reaction, it is highly unstable, especially in KOH solution. In this paper, we approached a simple method to reduce corrosion and improve the performance by depositing nickel-molybdenum oxide and nickel on copper substrates and the achieved tafel slopes of 115 mV/dec and 117 mV/dec at 10 mA/cm2. While at first, molybdenum oxide coated samples showed better performance after 100 cycles of stability tests, the onset potential rapidly changed. Cu-Ni, which was deposited using the electron gun evaporation (e-gun), has shown better performance with 0.28 V at 10 mA/cm2 and led to stability after 100 cycles. Our results show that when copper is alloyed with nickel, it acts as a promising hydrogen evolution reaction (HER) catalyst.

Resistance Switching and Failure Behavior of the MoOx/Mo2C Heterostructure

With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoO_x/Mo₂C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoO_x/Mo₂C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/-0.3 V, an ultralow power consumption of 5 × 10^-8 W, and an on/off ratio of 10², which is ascribed to the transport of the internal oxygen ions of MoO_x. Furthermore, the failure behavior of RS behaviors of the MoO_x/Mo₂C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoO_x layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoO_x and Mo₂C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.

2D MoO3-xSx/MoS2 van der Waals Assembly: A Tunable Heterojunction with Attractive Properties for Photocatalysis

Two-dimensional (2D) van der Waals (vdW) heterostructures currently have attracted much attention in widespread research fields where semiconductor materials are key. With the aim of gaining insights into photocatalytic materials, we use density functional theory (DFT) calculations within the HSE06 functional to analyze the evolution of optoelectronic properties and high-frequency dielectric constant profiles of various 2D MoO_3-xS_x/MoS₂ heterostructures modified by chemical and physical approaches. Although the MoO₃/MoS₂ heterostructure is a type III heterojunction associated with a metallic character, we found that exchanging the terminal oxo atoms of the MoO_3-xS_x single layer (SL) with sulfur enables shifting its CB position above the VB position of the MoS₂ SL. This trend gives rise to a type II heterojunction where the band gap and charge transfer within the two layers are driven continuously by the S concentration in the MoO_3-xS_x SL. This fine-tuning leads to a versatile type II heterostructure proposed to provide a direct Z-scheme system valuable for photocatalytic water splitting.

A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges

Molybdenum disulfide (MoS2) is one of the compounds discussed nowadays due to its outstanding properties that allowed its usage in different applications. Its band gap and its distinctive structure make it a promising material to substitute graphene and other semiconductor devices. It has different applications in electronics especially sensors like optical sensors, biosensors, electrochemical biosensors that play an important role in the detection of various diseases’ like cancer and Alzheimer. It has a wide range of energy applications in batteries, solar cells, microwave, and Terahertz applications. It is a promising material on a nanoscale level, with favorable characteristics in spintronics and magnetoresistance. In this review, we will discuss MoS2 properties, structure and synthesis techniques with a focus on its applications and future challenges.

Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides

In this work, we investigate the surface transfer doping process that is induced between hydrogen-terminated (100) diamond and the metal oxides, MoO₃ and V₂O₅, through simulation using a semi-empirical Density Functional Theory (DFT) method. DFT was used to calculate the band structure and charge transfer process between these oxide materials and hydrogen terminated diamond. Analysis of the band structures, density of states, Mulliken charges, adsorption energies and position of the Valence Band Minima (VBM) and Conduction Band Minima (CBM) energy levels shows that both oxides act as electron acceptors and inject holes into the diamond structure. Hence, those metal oxides can be described as p-type doping materials for the diamond. Additionally, our work suggests that by depositing appropriate metal oxides in an oxygen rich atmosphere or using metal oxides with high stochiometric ration between oxygen and metal atoms could lead to an increase of the charge transfer between the diamond and oxide, leading to enhanced surface transfer doping.

Interfacial and Electronic Modulation via Localized Sulfurization for Boosting Lithium Storage Kinetics

Structural modulation endows electrochemical hybrids with promising energy storage properties owing to their adjustable interfacial and/or electronic characteristics. For MXene-based materials, however, the facile but effective strategies for tuning their structural properties at nanoscale are still lacking. Herein, 3D crumpled S-functionalized Ti₃ C₂ T_x substrate is rationally integrated with Fe₃ O₄ /FeS heterostructures via coprecipitation and subsequent partial sulfurization to induce a highly active and stable electrode architecture. The unique heterostructures with tuned electronic properties can induce improved kinetics and structural stability. The surface engineering by S terminations on the MXene further unlocks extra (pseudo)capacitive lithium storage. Serving as anode for lithium storage, the optimized electrode delivers an excellent long-term cycling stability (913.9 mAh g^-1 after 1000 cycles at 1 A g^-1 ) and superior rate capability (490.4 mAh g^-1 at 10 A g^-1 ). Moreover, the (de)lithiation pathways associated with energy storage mechanisms are further revealed by operando X-ray diffraction, in situ electroanalytical techniques, and first-principles calculations. The hybrid electrode is proved to undergo stepwise phase transformations during discharging but a relatively uniform reconversion during charging, suggesting an asymmetric conversion mechanism. This work provides a novel strategy for designing high-performance hybrids and paves the way for in-depth understanding of complex lithium intercalation and conversion reactions.

Fabrication of MoOx/Mo2C-Layered Hybrid Structures by Direct Thermal Oxidation of Mo2C

Two-dimensional (2D) Mo₂C, as a new member of transition metal carbides, has many intriguing properties and potential applications in superconductors and electronic devices. The thermal stability of 2D materials is essential for the performance of the related devices, especially the ones with a vertical heterostructure. However, rare reports have demonstrated the thermal stability of Mo₂C and the effects of thermal stability on its performance. Here, we propose a facile and controllable method to directly oxidize Mo₂C to MoO_x, forming a MoO_x/Mo₂C heterostructure. During the oxidization process, an in situ technique is employed to uncover the transformation and thermal stability of the Mo₂C. The chemical vapor deposition Mo₂C shows high structural stability below 550 °C in Ar or below 350 °C in O₂, which demonstrates the high thermal stability and antioxidation of the Mo₂C film. The metallic Mo₂C is gradually oxidized to semiconducting MoO_x as the temperature increases above 350 °C. The oxidization rate can be easily controlled by adjusting the oxidation temperature and time. Further, the obtained MoO_x/Mo₂C vertical hybrid structure shows obvious Schottky junction behaviors, strongly indicating the perfect interfacial contact between the component layers. This work offers a new strategy for the controllable fabrication of high-quality 2D heterostructures.

One-Dimensional Edge Contacts to a Monolayer Semiconductor

Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS₂. By combining reactive ion etching, in situ Ar⁺ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ∼30 cm² V^-1 s^-1) and high on-current density (>50 μA/μm at V_DS = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS₂ channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.

Small stoichiometric (MoS2)n clusters with the 1T phase

Stoichiometric (MoS₂)_n clusters (n = 1–6) were systematically studied by density functional theory calculations with hybrid B3LYP and pure GGA PW91 functionals.

Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics

Atomic structures and electronic properties of MoS₂/HfO₂ defective interfaces are investigated extensively for future field-effect transistor device applications. To mimic the atomic layer deposition growth under ambient conditions, the impact of interfacial oxygen concentration on the MoS₂/HfO₂ interface electronic structure is examined. Then, the effect on band offsets (BOs) and the thermodynamic stability of those interfaces is investigated and compared with available relevant experimental data. Our results show that the BOs can be modified up to 2 eV by tuning the oxygen content through, for example, the relative partial pressure. Interfaces with hydrogen impurities as well as various structural disorders were also considered, leading to different behaviors, such as n-type doping, or introducing defect states close to the Fermi level because of the formation of hydroxyl groups. Then, our results indicate that for a well-prepared interface the electronic device performance should be better than that of other interfaces, such as III-V/high-κ, because of the absence of interface defect states. However, any unpassivated defects, if present during oxide growth, strongly affect the subsequent electronic properties of the interface. The unique electronic properties of monolayer-to-few-layered transition-metal dichalcogenides and dielectric interfaces are described in detail for the first time, showing the promising interfacial characteristics for future transistor technology.

Electronic structures and transport properties of a MoS2–NbS2 nanoribbon lateral heterostructure

A theoretical study on a transition metal dichalcogenide one-dimensional nanoribbon lateral heterostructure for nanoelectronics with low energy consumption.