1
|
Khatoon N, Subedi B, Chrisey DB. Synthesis of Silicon and Germanium Oxide Nanostructures via Photonic Curing; a Facile Approach to Scale Up Fabrication. ChemistryOpen 2024:e202300260. [PMID: 38308174 DOI: 10.1002/open.202300260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 01/24/2024] [Indexed: 02/04/2024] Open
Abstract
Silicon and Germanium oxide (SiOx and GeOx ) nanostructures are promising materials for energy storage applications due to their potentially high energy density, large lithiation capacity (~10X carbon), low toxicity, low cost, and high thermal stability. This work reports a unique approach to achieving controlled synthesis of SiOx and GeOx nanostructures via photonic curing. Unlike conventional methods like rapid thermal annealing, quenching during pulsed photonic curing occurs rapidly (sub-millisecond), allowing the trapping of metastable states to form unique phases and nanostructures. We explored the possible underlying mechanism of photonic curing by incorporating laws of photophysics, photochemistry, and simulated temperature profile of thin film. The results show that photonic curing of spray coated 0.1 M molarity Si and Ge Acetyl Acetate precursor solution, at total fluence 80 J cm-2 can yield GeOx and SiOx nanostructures. The as-synthesized nanostructures are ester functionalized due to photoinitiated chemical reactions in thin film during photonic curing. Results also showed that nanoparticle size changes from ~48 nm to ~11 nm if overall fluence is increased by increasing the number of pulses. These results are an important contribution towards large-scale synthesis of the Ge and Si oxide nanostructured materials which is necessary for next-generation energy storage devices.
Collapse
Affiliation(s)
- Najma Khatoon
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118
| | - Binod Subedi
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118
| | - Douglas B Chrisey
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118
| |
Collapse
|
2
|
Moon CJ, Park JW, Jang YR, Kim HS. Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors. Sci Rep 2024; 14:1566. [PMID: 38238447 PMCID: PMC10796356 DOI: 10.1038/s41598-024-52096-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 01/13/2024] [Indexed: 01/22/2024] Open
Abstract
In this study, an intense pulsed light (IPL) annealing process for a printed multi-layered indium-gallium-zinc-oxide (IGZO) and silver (Ag) electrode structure was developed for a high performance all-printed inorganic thin film transistor (TFT). Through a solution process using IGZO precursor and Ag ink, the bottom gate structure TFT was fabricated. The spin coating method was used to form the IGZO semiconductor layer on a heavily-doped silicon wafer covered with thermally grown silicon dioxide. The annealing process of the IGZO layer utilized an optimized IPL irradiation process. The Ag inks were printed on the IGZO layer by screen printing to form the source and drain (S/D) pattern. This S/D pattern was dried by near infrared radiation (NIR) and the dried S/D pattern was sintered with intense pulsed light by varying the irradiation energy. The performances of the all-printed TFT such as the field effect mobility and on-off ratio electrical transfer properties were measured by a parameter analyzer. The interfacial analysis including the contact resistance and cross-sectional microstructure analysis is essential because diffusion phenomenon can occur during the annealing and sintering process. Consequently, this TFT device showed noteworthy performance (field effect mobility: 7.96 cm2/V s, on/off ratio: 107). This is similar performance compared to a conventional TFT, which is expected to open a new path in the printed metal oxide-based TFT field.
Collapse
Affiliation(s)
- Chang-Jin Moon
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea
| | - Jong-Whi Park
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea
| | - Yong-Rae Jang
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea
| | - Hak-Sung Kim
- Department of Mechanical Engineering, Hanyang University, Haengdang-Dong, Seongdong-gu, Seoul, 133-791, Republic of Korea.
- Institute of Nano Science and Technology, Hanyang University, Seoul, 133-791, Republic of Korea.
| |
Collapse
|
3
|
Kumaar D, Can M, Portner K, Weigand H, Yarema O, Wintersteller S, Schenk F, Boskovic D, Pharizat N, Meinert R, Gilshtein E, Romanyuk Y, Karvounis A, Grange R, Emboras A, Wood V, Yarema M. Colloidal Ternary Telluride Quantum Dots for Tunable Phase Change Optics in the Visible and Near-Infrared. ACS NANO 2023; 17:6985-6997. [PMID: 36971128 PMCID: PMC10100560 DOI: 10.1021/acsnano.3c01187] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Accepted: 03/23/2023] [Indexed: 06/18/2023]
Abstract
A structural change between amorphous and crystalline phase provides a basis for reliable and modular photonic and electronic devices, such as nonvolatile memory, beam steerers, solid-state reflective displays, or mid-IR antennas. In this paper, we leverage the benefits of liquid-based synthesis to access phase-change memory tellurides in the form of colloidally stable quantum dots. We report a library of ternary MxGe1-xTe colloids (where M is Sn, Bi, Pb, In, Co, Ag) and then showcase the phase, composition, and size tunability for Sn-Ge-Te quantum dots. Full chemical control of Sn-Ge-Te quantum dots permits a systematic study of structural and optical properties of this phase-change nanomaterial. Specifically, we report composition-dependent crystallization temperature for Sn-Ge-Te quantum dots, which is notably higher compared to bulk thin films. This gives the synergistic benefit of tailoring dopant and material dimension to combine the superior aging properties and ultrafast crystallization kinetics of bulk Sn-Ge-Te, while improving memory data retention due to nanoscale size effects. Furthermore, we discover a large reflectivity contrast between amorphous and crystalline Sn-Ge-Te thin films, exceeding 0.7 in the near-IR spectrum region. We utilize these excellent phase-change optical properties of Sn-Ge-Te quantum dots along with liquid-based processability for nonvolatile multicolor images and electro-optical phase-change devices. Our colloidal approach for phase-change applications offers higher customizability of materials, simpler fabrication, and further miniaturization to the sub-10 nm phase-change devices.
Collapse
Affiliation(s)
- Dhananjeya Kumaar
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Matthias Can
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Kevin Portner
- Integrated
Systems Laboratory, Department of Information Technology and Electrical
Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Helena Weigand
- Optical
Nanomaterial Group, Institute for Quantum Electronics, Department
of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Olesya Yarema
- Materials
and Device Engineering, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Simon Wintersteller
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Florian Schenk
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Darijan Boskovic
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Nathan Pharizat
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Robin Meinert
- Integrated
Systems Laboratory, Department of Information Technology and Electrical
Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Evgeniia Gilshtein
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Yaroslav Romanyuk
- Laboratory
for Thin Films and Photovoltaics, Empa −
Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Artemios Karvounis
- Optical
Nanomaterial Group, Institute for Quantum Electronics, Department
of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Rachel Grange
- Optical
Nanomaterial Group, Institute for Quantum Electronics, Department
of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Alexandros Emboras
- Integrated
Systems Laboratory, Department of Information Technology and Electrical
Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Vanessa Wood
- Materials
and Device Engineering, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| | - Maksym Yarema
- Chemistry
and Materials Design, Institute for Electronics, Department of Information
Technology and Electrical Engineering, ETH
Zürich, 8092 Zürich, Switzerland
| |
Collapse
|
4
|
Noh Y, Kim GY, Lee H, Shin J, An K, Kumar M, Lee D. A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application. NANOTECHNOLOGY 2022; 33:272001. [PMID: 35358953 DOI: 10.1088/1361-6528/ac6314] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Accepted: 03/30/2022] [Indexed: 05/27/2023]
Abstract
The intense pulsed light (IPL) post-treatment process has attracted great attention in the device fabrication due to its versatility and rapidity particularly for solution process functional structures in devices, flexible/printed electronics, and continuous manufacturing process. The metal oxide materials inherently have multi-functionality and have been widely used in form of thin films or nanostructures in device application such as thin film transistors, light emitting diodes, solar cells, supercapacitors, etc. The IPL treatment enhances the physical and/or chemical properties of the functional metal oxide through photothermal effects. However, most metal oxides are transparent to most range of visible light and require more energy for post-treatment. In this review, we have summarized the IPL post-treatment processes for metal oxide thin films and nanostructures in device applications. The sintering and annealing of metal oxides using IPL improved the device performances by employing additional light absorbing layer or back-reflector. The IPL process becomes an innovative versatile post-treatment process in conjunction with multi-functional metal oxides in near-future device applications.
Collapse
Affiliation(s)
- Youngwook Noh
- Department of Mechanical Design and Production Engineering, Konkuk University, Seoul, Republic of Korea
| | - Gyu Young Kim
- Department of Mechanical Design and Production Engineering, Konkuk University, Seoul, Republic of Korea
| | - Horim Lee
- Department of Mechanical Design and Production Engineering, Konkuk University, Seoul, Republic of Korea
| | - Jaehak Shin
- Department of Mechanical Design and Production Engineering, Konkuk University, Seoul, Republic of Korea
| | - Kunsik An
- Department of Mechatronics Engineering, Konkuk University, Chungju, Republic of Korea
| | - Manoj Kumar
- Department of Physics, Starex University, Haryana, India
| | - Dongjin Lee
- Department of Mechanical Design and Production Engineering, Konkuk University, Seoul, Republic of Korea
| |
Collapse
|
5
|
Bachevillier S, Yuan HK, Tetzner K, Bradley DDC, Anthopoulos TD, Stavrinou PN, Stingelin N. Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material. MATERIALS HORIZONS 2022; 9:411-416. [PMID: 34668508 DOI: 10.1039/d1mh01366a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We demonstrate proof-of-concept refractive-index structures with large refractive-index-gradient profiles, using a micro-contact photothermal annealing (μCPA) process to pattern organic/inorganic hybrid materials comprising titanium oxide hydrate within a poly(vinyl alcohol) binder. A significant refractive index modulation of up to Δn ≈ +0.05 can be achieved with μCPA within less than a second of pulsed lamp exposure, which promises the potential for a high throughput fabrication process of photonic structures with a polymer-based system.
Collapse
Affiliation(s)
- Stefan Bachevillier
- Department of Materials and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UK
| | - Hua-Kang Yuan
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, Prince Consort Rd, London, SW7 2AZ, UK
| | - Kornelius Tetzner
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
| | - Donal D C Bradley
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Paul N Stavrinou
- Department of Engineering Science, University of Oxford, Parks Rd, Oxford OX1 3PJ, UK.
| | - Natalie Stingelin
- School of Materials Science & Engineering and School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Ferst Drive, Atlanta, GA 300332, USA.
| |
Collapse
|
6
|
Ko P, Seok JY, Kim H, Kwon S, Jeong S, Youn H, Woo K. Flashlight-Induced Strong Self-Adhesive Surface on a Nanowire-Impregnated Transparent Conductive Film. ACS APPLIED MATERIALS & INTERFACES 2021; 13:40062-40069. [PMID: 34379391 DOI: 10.1021/acsami.1c09727] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The flashlight annealing process has been widely used in the field of flexible and printed electronics because it can instantly induce chemical and structural modifications over a large area on an electronic functional layer in a subsecond time range. In this study, for the first time, we explored a straightforward method to develop strong self-adhesion on a metal nanowire-based flexible and transparent conductive film via flashlight irradiation. Nanowire interlocking, for strong mechanical bonding at the interface between the nanowires and polyamide film, was achieved by simple hot pressing. Then, by irradiating the nanowire-impregnated film with a flashlight, several events such as interdiffusion and melting of surface polymers could be induced along with morphological changes leading to an increase in the film surface area. As a result, the surface of the fabricated film exhibited strong interfacial interactions while forming intimate contact with the heterogeneous surfaces of other objects, thereby becoming strongly self-adhesive. This readily achievable, self-attachable, flexible, and transparent electrode allowed the self-interconnection of a light-emitting diode chip, and it was also compatible for various applications, such as defogging windows and transparent organic light-emitting diodes.
Collapse
Affiliation(s)
- Pyeongsam Ko
- Nano-Convergence Manufacturing Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
- Department of Mechanical Engineering, Hanbat National University, Dongseodaero 125, Yuseong-gu, Daejeon 34158, Republic of Korea
| | - Jae Young Seok
- Nano-Convergence Manufacturing Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Hyuntae Kim
- Nano-Convergence Manufacturing Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Sin Kwon
- Nano-Convergence Manufacturing Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Sunho Jeong
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, Gyeonggi-do 17104, Republic of Korea
| | - Hongseok Youn
- Department of Mechanical Engineering, Hanbat National University, Dongseodaero 125, Yuseong-gu, Daejeon 34158, Republic of Korea
| | - Kyoohee Woo
- Nano-Convergence Manufacturing Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| |
Collapse
|
7
|
Weidling AM, Turkani VS, Luo B, Schroder KA, Swisher SL. Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors. ACS OMEGA 2021; 6:17323-17334. [PMID: 34278118 PMCID: PMC8280640 DOI: 10.1021/acsomega.1c01421] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Accepted: 06/15/2021] [Indexed: 05/25/2023]
Abstract
In this study, photonic curing is used to rapidly and effectively convert metal-oxide sol-gels to realize high-quality thin-film transistors (TFTs). Photonic curing offers advantages over conventional thermal processing methods such as ultrashort processing time and compatibility with low-temperature substrates. However, previous work on photonically cured TFTs often results in significant heating of the entire substrate rather than just the thin film at the surface. Here, sol-gel indium zinc oxide (IZO)-based TFTs are photonically cured with efficient gate absorbers requiring as few as five pulses using intense white light delivering radiant energy up to 6 J cm-2. Simulations indicate that the IZO film reaches a peak temperature of ∼590 °C while the back of the substrate stays below 30 °C. The requirements and design guidelines for photonic curing metal-oxide semiconductors for high-performance TFT applications are discussed, focusing on the importance of effective gate absorbers and optimized pulse designs to efficiently and effectively cure sol-gel films. This process yields TFTs with a field-effect mobility of 21.8 cm2 V-1 s-1 and an I on/I off ratio approaching 108, which exceeds the performance of samples annealed at 500 °C for 1 h. This is the best performance and highest metal-oxide conversion for photonically cured oxide TFTs achieved to date that does not significantly heat the entire thickness of the substrate. Importantly, the conversion from sol-gel precursors to the semiconducting metal-oxide phase during photonic curing is on par with thermal annealing, which is a significant improvement over previous pulsed-light processing work. The use of efficient gate absorbers also allows for the reduction in the number of pulses and efficient sol-gel conversion.
Collapse
Affiliation(s)
- Adam M. Weidling
- Department
of Electrical and Computer Engineering, University of Minnesota, Twin Cities, 4-174 Keller Hall, 200 Union Street Southeast, Minneapolis, Minnesota 55455, United States
| | - Vikram S. Turkani
- NovaCentrix, 400 Parker Drive, Suite 1110, Austin, Texas 78728, United States
| | - Bing Luo
- Characterization
Facility, University of Minnesota, Twin
Cities, 12 Shepherd Labs,
100 Union Street Southeast, Minneapolis, Minnesota 55455, United States
| | - Kurt A. Schroder
- NovaCentrix, 400 Parker Drive, Suite 1110, Austin, Texas 78728, United States
| | - Sarah L. Swisher
- Department
of Electrical and Computer Engineering, University of Minnesota, Twin Cities, 4-174 Keller Hall, 200 Union Street Southeast, Minneapolis, Minnesota 55455, United States
| |
Collapse
|
8
|
Lee WJ, Choi JG, Sung S, Kim CH, Na S, Joo YC, Park S, Yoon MH. Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:2820-2828. [PMID: 33405507 DOI: 10.1021/acsami.0c18118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this research, we report the rapid and reliable formation of high-performance nanoscale bilayer oxide dielectrics on silicon substrates via low-temperature deep ultraviolet (DUV) photoactivation. The optical analysis of sol-gel aluminum oxide films prepared at various concentrations reveals the processable film thickness with DUV photoactivation and its possible generalization to the formation of various metal oxide films on silicon substrates. The physicochemical and electrical characterizations confirm that DUV photoactivation accelerates the efficient formation of a highly dense aluminum oxide and aluminum silicate bilayer (17 nm) on heavily doped silicon at 150 °C within 5 min owing to the efficient thermal conduction on silicon, resulting in excellent dielectric properties in terms of low leakage current (∼10-8 A/cm2 at 1.0 MV/cm) and high areal capacitance (∼0.4 μF/cm2 at 100 kHz) with narrow statistical distributions. Additionally, the sol-gel bilayer oxide dielectrics are successfully combined with a sol-gel indium-gallium-zinc oxide semiconductor via two successive DUV photoactivation cycles, leading to the efficient fabrication of solution-processed oxide thin-film transistors on silicon substrates with an operational voltage below 0.5 V. We expect that in combination with large-area printing, the bilayer oxide dielectrics are beneficial for large-area solution-based oxide electronics on silicon substrates, while DUV photoactivation can be applied to various types of solution-processed functional metal oxides such as phase-transition memories, ferroelectrics, photocatalysts, charge-transporting interlayers and passivation layers, etc. on silicon substrates.
Collapse
Affiliation(s)
- Won-June Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Jun-Gyu Choi
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Sujin Sung
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Chang-Hyun Kim
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sekwon Na
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Young-Chang Joo
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungjun Park
- Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Myung-Han Yoon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| |
Collapse
|
9
|
Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array. MICROMACHINES 2020; 11:mi11050508. [PMID: 32443447 PMCID: PMC7281425 DOI: 10.3390/mi11050508] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2020] [Revised: 05/07/2020] [Accepted: 05/15/2020] [Indexed: 11/17/2022]
Abstract
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (μFE) of 1.54 cm2/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher μFE of 2.17 cm2/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm2. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.
Collapse
|
10
|
Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics. Proc Natl Acad Sci U S A 2019; 116:9230-9238. [PMID: 31004056 DOI: 10.1073/pnas.1901492116] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal-oxygen-metal (M-O-M) lattice condensation then occur within 10-60 s at 200-350 °C for representative MO semiconductor [indium oxide (In2O3), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al2O3)] films. Thus, wafer-scale CBC fabrication of IGZO-Al2O3 thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm2 V-1 s-1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.
Collapse
|
11
|
Moon CJ, Kim HS. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:13380-13388. [PMID: 30882197 DOI: 10.1021/acsami.8b22458] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this study, an intense pulsed light (IPL) process for annealing an indium-gallium-zinc-oxide (IGZO) semiconductor was conducted via flash white light combined with near-infrared (NIR) and deep-ultraviolet (DUV) drying to form a thin-film transistor (TFT). The IGZO thin-film semiconductor was fabricated using a solution-based process on a doped-silicon wafer covered with silicon dioxide. In order to optimize the IPL irradiation condition for the annealing process, the flash white light irradiation energy was varied from 70 to 130 J/cm2. Drying by NIR and DUV irradiation was employed and optimized to improve the performance of the TFT during IPL annealing. A TFT with a bottom-gate and top-contact structure was formed by depositing an aluminum electrode on the source and drain on the IPL-annealed IGZO. The electrical transfer characteristic of the TFT was measured using a parameter analyzer. The field effect mobility of the saturation regime and on/off current ratio were evaluated. Changes of the metal-oxide bonds in the IGZO thin film were analyzed using X-ray photoelectron spectroscopy to verify the effect of NIR and DUV drying and IPL annealing. Also, the distributions of the carrier concentration on the IPL-annealed IGZO were measured through a hall-effect system to deeply investigate the transition of the electrical characteristic of the TFT. From the results, it was found that the bond between oxygen and the gallium compound was activated via DUV irradiation. The NIR- and DUV-assisted IPL-annealed IGZO-based TFT showed highly enhanced electrical performance with a 7.7 cm2/V·s mobility and a 3 × 106 on/off ratio.
Collapse
Affiliation(s)
- Chang-Jin Moon
- Department of Mechanical Engineering , Hanyang University , Haengdang-dong, Seongdong-gu, Seoul 133-791 , Republic of Korea
| | - Hak-Sung Kim
- Department of Mechanical Engineering , Hanyang University , Haengdang-dong, Seongdong-gu, Seoul 133-791 , Republic of Korea
- Institute of Nano Science and Technology , Hanyang University , Seoul 133-791 , Republic of Korea
| |
Collapse
|
12
|
Kathirgamanathan P, Kumaraverl M, Vanga RR, Ravichandran S. Intense pulsed light (IPL) annealed sol-gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs). RSC Adv 2018; 8:36632-36646. [PMID: 35558924 PMCID: PMC9088871 DOI: 10.1039/c8ra08136k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2018] [Accepted: 10/22/2018] [Indexed: 12/25/2022] Open
Abstract
Room temperature intense pulsed light annealing (photonic annealing, pulsed forge) renders the sol-gel derived ZnO films highly conductive and hydrophobic with improved interface with the colloidal quantum dots. The IPL annealed ZnO proved to be a better electron transporter/injector in inverted devices with QDs. Both the current and power efficiencies of red devices comprising IPL annealed ZnO were 13.75 and 37.5 fold higher than the identical devices produced with thermally annealed ZnO. The lifetime of the devices with IPL annealed ZnO was found to be fivefold longer than the thermally annealed ZnO counterpart. Thermally aged devices comprising IPL annealed ZnO gave a maximum current efficiency of 23 cd A-1 and a power efficiency of 30 lm W-1.
Collapse
Affiliation(s)
| | | | - Raghava Reddy Vanga
- Organic Electronics Group, Wolfson Centre, Brunel University London Uxbridge UB8 3PH UK
| | | |
Collapse
|
13
|
Lee WH, Lee SJ, Lim JA, Cho JH. Printed In-Ga-Zn-O drop-based thin-film transistors sintered using intensely pulsed white light. RSC Adv 2015. [DOI: 10.1039/c5ra13573g] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We developed printed IGZO TFTs by delivering droplets of a precursor solution using a picoliter fluidic dispensing system.
Collapse
Affiliation(s)
- Wi Hyoung Lee
- Department of Organic and Nano System Engineering
- Konkuk University
- Seoul 143-701
- Korea
| | - Seong Jun Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering
- Sungkyunkwan University
- Suwon 440-746
- Korea
| | - Jung Ah Lim
- Center for Opto-Electronic Materials and Devices
- Post-Silicon Semiconductor Institute
- Korea Institute of Science and Technology
- Seoul 136-791
- Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering
- Sungkyunkwan University
- Suwon 440-746
- Korea
| |
Collapse
|