Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates

Controllable growth of two-dimensional (2D) single crystals on insulating substrates is the ultimate pursuit for realizing high-end applications in electronics and optoelectronics. However, for the most typical 2D insulator, hexagonal boron nitride (hBN), the production of a single-crystal monolayer on insulating substrates remains challenging. Here, we propose a methodology to realize the facile production of inch-sized single-crystal hBN monolayers on various insulating substrates by an atomic-scale stamp-like technique. The single-crystal Cu foils grown with hBN films can stick tightly (within 0.35 nm) to the insulating substrate at sub-melting temperature of Cu and extrude the hBN grown on the metallic surface onto the insulating substrate. Single-crystal hBN films can then be obtained by removing the Cu foil similar to the stamp process, regardless of the type or crystallinity of the insulating substrates. Our work will likely promote the manufacturing process of fully single-crystal 2D material-based devices and their applications.

Facile preparation of conductive carbon-based membranes on dielectric substrates

Graphene has attracted much research attention due to its outstanding chemical and physical properties, such as its excellent electronic conductivity, making it as a useful carbon material for a variety of application fields of photoelectric functional devices. Herein, a new method for synthesizing conductive carbon membranes on dielectric substrates via a low-temperature thermodynamic driven process is developed. Although the obtained films exhibit low crystallinity, their electrical, wetting, and optical properties are acceptable in practice, which opens up a new avenue for the growth of carbon membranes and may facilitate the applications of transparent electrodes as potential plasma-free surface-enhanced Raman scattering (SERS) substrates.

Graphene-Based Nanocomposites as Antibacterial, Antiviral and Antifungal Agents

Over the past decade, there have been many interesting studies in the scientific literature about the interaction of graphene-based polymeric nanocomposites with microorganisms to tackle antimicrobial resistance. These studies have reported variable intensities of biocompatibility and selectivity for the nanocomposites toward a specific strain, but it is widely believed that graphene nanocomposites have antibacterial, antiviral, and antifungal activities. Such antibacterial activity is due to several mechanisms by which graphene nanocomposites can act on cells including stimulating oxidative stress; disrupting membranes due to sharp edges; greatly changing core structure mechanical strength and coarseness. However, the underlying mechanisms of graphene nanocomposites as antiviral and antifungal agents remain relatively scarce. In this review, recent advances in the synthesis, functional tailoring, and antibacterial, antiviral, and antifungal applications of graphene nanocomposites are summarized. The synthesis of graphene materials and graphene-based polymeric nanocomposites with techniques such as pressurized gyration, electrospinning, chemical vapor deposition, and layer-by-layer self-assembly is first introduced. Then, the antimicrobial mechanisms of graphene membranes are presented and demonstrated typical in vitro and in vivo studies on the use of graphene nanocomposites for antibacterial, antiviral, and antifungal applications. Finally, the review describes the biosafety, current limitations, and potential of antimicrobial graphene-based nanocomposites.

Development of heterogeneous photocatalysts via the covalent grafting of metal complexes on various solid supports

To date, remarkable progress has been achieved in the development of photocatalysts owing to their high activity, selectivity, and tunable light absorption in the visible light range. Recently, heterogeneous photocatalytic systems have emerged as potential candidates due to their beneficial attributes (e.g., high surface area, ease of functionalization and facile separation). Herein, we provide a concise overview of the rational design of heterogeneous photocatalysts by grafting photoactive complexes on heterogeneous support matrices via covalent grafting and their detailed characterization techniques, which have been followed by the landmark examples of their applications. Also, major challenges and opportunities in the forthcoming progress of these appealing areas are emphasised.

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. We converted polycrystalline Cu foil placed on Al₂O₃(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al₂O₃(0001) by multi-cycle plasma etching-assisted-chemical vapour deposition. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices.

Electro-responsive actuators based on graphene

Electro-responsive actuators (ERAs) hold great promise for cutting-edge applications in e-skins, soft robots, unmanned flight, and in vivo surgery devices due to the advantages of fast response, precise control, programmable deformation, and the ease of integration with control circuits. Recently, considering the excellent physical/chemical/mechanical properties (e.g., high carrier mobility, strong mechanical strength, outstanding thermal conductivity, high specific surface area, flexibility, and transparency), graphene and its derivatives have emerged as an appealing material in developing ERAs. In this review, we have summarized the recent advances in graphene-based ERAs. Typical the working mechanisms of graphene ERAs have been introduced. Design principles and working performance of three typical types of graphene ERAs (e.g., electrostatic actuators, electrothermal actuators, and ionic actuators) have been comprehensively summarized. Besides, emerging applications of graphene ERAs, including artificial muscles, bionic robots, human-soft actuators interaction, and other smart devices, have been reviewed. At last, the current challenges and future perspectives of graphene ERAs are discussed.

Wafer-Scale Integration of Graphene-Based Photonic Devices

Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V-1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphene-based photonic devices.

Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate

The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp² substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C₁₆H₆N₆).

Graphene on Group-IV Elementary Semiconductors: The Direct Growth Approach and Its Applications

Since the first development of large-area graphene synthesis by the chemical vapor deposition (CVD) method in 2009, CVD-graphene has been considered to be a key material in the future electronics, energy, and display industries, which require transparent, flexible, and stretchable characteristics. Although many graphene-based prototype applications have been demonstrated, several important issues must be addressed in order for them to be compatible with current complementary metal-oxide-semiconductor (CMOS)-based manufacturing processes. In particular, metal contamination and mechanical damage, caused by the metal catalyst for graphene growth, are known to cause severe and irreversible deterioration in the performance of devices. The most effective way to solve the problems is to grow the graphene directly on the semiconductor substrate. Herein, recent advances in the direct growth of graphene on group-IV semiconductors are reviewed, focusing mainly on the growth mechanism and initial growth behavior when graphene is synthesized on Si and Ge. Furthermore, recent progress in the device applications of graphene with Si and Ge are presented. Finally, perspectives for future research in graphene with a semiconductor are discussed.

Scalable Salt-Templated Synthesis of Nitrogen-Doped Graphene Nanosheets toward Printable Energy Storage

Mass production of graphene powders affording high quality and environmental benignancy serves as a prerequisite for the practical usage of graphene in multiple energy storage applications. Herein, we exploit a salt-templated CVD approach to harness the direct synthesis of nitrogen-doped graphene (NG) nanosheets and related ink dispersions in a scalable, safe, efficient, and green fashion. Thus-fabricated NG accompanying large productivity, excellent electrical conductivity, and favorable solution processability possesses implications in printable energy storage devices. With the NG-based ink in hand, self-standing 3D architectures with programmable patterns can be directly printed over a myriad of substrates. Accordingly, both electrode preparation for flexible supercapacitors and separator modification in Li-S batteries can be enabled via printing by employing our NG-based composite inks. This work thus represents a practical route for mass production of graphene inks with cost-effectiveness and eco-friendliness for emerging energy storage technology.

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates that the hydroxylation of silica substrate weakens the binding between graphene edges and substrate, thus realizing the primary nucleation-dominated growth. Field-effect transistors based on the graphene films show exceptional electrical performance with the charge carrier mobility up to 3800 cm² V^-1 s^-1 in air, which is much higher than those reported results of graphene films grown on dielectrics.

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO₂/Si) substrate using methanol as the only carbon source. A 1 × 1 cm² SiO₂/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm²/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.

Laser Tailored Multilayer Graphene Grids for Transparent Conductive Electrodes

Applications of graphene as transparent conductive electrodes (TCE) have been hindered either by high cost of single crystal graphene or balance between transparency and sheet resistance of polycrystalline graphene. In this work, we propose to fabricate multilayer graphene film grids (MGFG) to enhance transparency and keep low sheet resistance through IR laser tailoring. It is proved that the transparency of MGFG could be increased by 200 times while remaining its competitive sheet resistance as low as 340 Ω sq^-1 through adjusting the tailoring grid, and the corresponding figures of merit (FoM) is increased from 0.1 to 3.6. As-obtained MGFG is demonstrated in generating controllable local thermal field and defogging efficiently. The strategy of laser-tailoring grid will greatly advance the applications of graphene for transparent electrodes in industry.

Scalable Production of Nanographene and Doping via Nondestructive Covalent Functionalization

A new method for top-down, one-pot, gram-scale production of high quality nanographene by incubating graphite in a dilute sodium hypochlorite solution at only 40 °C is reported here. The produced sheets have only 4 at% oxygen content, comparable with nanographene grown by chemical vapor deposition. The nanographene sheets are covalently functionalized using a nondestructive nitrene [2+1] cycloaddition reaction that preserves their π-conjugated system. Statistical analyses of Raman spectroscopy and X-ray photoelectron spectroscopy indicate a low number of sp³ carbon atoms on the order of 2% before and 4% after covalent functionalization. The nanographene sheets are significantly more conductive than conventionally prepared nanographene oxide, and conductivity further increases after covalent functionalization. The observed doping effects and theoretical studies suggest sp² hybridization for the carbon atoms involved in the [2+1] cycloaddition reaction leading to preservation of the π-conjugated system and enhancing conductivity via n-type doping through the bridging N-atom. These methods are easily scalable, which opens the door to a mild and efficient process to produce high quality nanographenes and covalently functionalize them while retaining or improving their physicochemical properties.

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

High-quality graphene grown on metal-free substrates represents a vital milestone that provides an atomic clean interface and a complementary metal-oxide-semiconductor-compatible manufacturing process for electronic applications. We report a scalable approach to fabricate radio frequency field-effect transistors with a graphene channel grown directly on the sapphire substrate using the technique of remote-catalyzed chemical vapor deposition (CVD). A mushroom-shaped AlO _x top gate is used to allow the self-aligned drain/source contacts, yielding remarkable increase of device transconductance and reduction of the associated parasitic resistance. The quality of thus-grown graphene is reflected in the high extrinsic cutoff frequency and maximum oscillation frequency of 10.1 and 5.6 GHz for the graphene channel of length 200 nm and width 80 μm, respectively, potentially comparable with those of transferred CVD graphene at the same channel length and holding promise for applications in high-speed wireless communications.

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h-BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal-catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq^-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C₂H₂, NH₃, and H₂ at a temperature of 700–750 °C.

The physics and chemistry of graphene-on-surfaces

This review describes the major “graphene-on-surface” structures and examines the roles of their properties in governing the overall performance for specific applications.

Direct growth of a graphitic nano-layer on optical fibers for ultra-fast laser application

A clean and uniform graphitic nano-layer (GNL) is grown in a controllable manner on the fiber-end by plasma-enhanced chemical vapor deposition. Using the GNL coated fiber, 991 fs soliton pulse generation at 1559 nm is achieved.

Wettability of vertically-oriented graphenes with different intersheet distances

The dependence of vertically-oriented graphenes' wettability on their surface morphologies is investigated with experiments and numerical simulations.

Direct Chemical-Vapor-Deposition-Fabricated, Large-Scale Graphene Glass with High Carrier Mobility and Uniformity for Touch Panel Applications

In this work, we report the transfer-free measurement of carrier dynamics and transport of direct chemical vapor deposition (CVD) grown graphene on glass with the aid of ultrafast transient absorption microscopy (TAM) and demonstrate the use of such graphene glass for high-performance touch panel applications. The 4.5 in.-sized graphene glass was produced by an optimized CVD procedure, which can readily serve as transparent conducting electrode (TCE) without further treatment. The graphene glass exhibited an intriguing optical transmittance and electrical conductance concurrently, presenting a sheet resistance of 370-510 Ω·sq^-1 at a transmittance of 82%, much improved from our previous achievements. Moreover, direct measurement of graphene carrier dynamics and transport by TAM revealed the similar biexponential decay behavior to that of CVD graphene grown on Cu, along with a carrier mobility as high as 4820 cm²·V^-1·s^-1. Such large-area, highly uniform, transparent conducting graphene glass was assembled to integrate resistive touch panels that demonstrated a high device performance. Briefly, this work aims to present the great feasibility of good quality graphene glass toward scalable and practical TCE applications.

Catalysis under Cover: Enhanced Reactivity at the Interface between (Doped) Graphene and Anatase TiO2

The "catalysis under cover" involves chemical processes which take place in the confined zone between a 2D material, such as graphene, h-BN, or MoS2, and the surface of an underlying support, such as a metal or a semiconducting oxide. The hybrid interface between graphene and anatase TiO2 is extremely important for photocatalytic and catalytic applications because of the excellent and complementary properties of the two materials. We investigate and discuss the reactivity of O2 and H2O on top and at the interface of this hybrid system by means of a wide set of dispersion-corrected hybrid density functional calculations. Both pure and boron- or nitrogen-doped graphene are interfaced with the most stable (101) anatase surface of TiO2 in order to improve the chemical activity of the C-layer. Especially in the case of boron, an enhanced reactivity toward O2 dissociation is observed as a result of both the contribution of the dopant and of the confinement effect in the bidimensional area between the two surfaces. Extremely stable dissociation products are observed where the boron atom bridges the two systems by forming very stable B-O covalent bonds. Interestingly, the B defect in graphene could also act as the transfer channel of oxygen atoms from the top side across the C atomic layer into the G/TiO2 interface. On the contrary, the same conditions are not found to favor water dissociation, proving that the "catalysis under cover" is not a general effect, but rather highly depends on the interfacing material properties, on the presence of defects and impurities and on the specific reaction involved.