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Kondo S, Murakami T, Pichon L, Leblanc-Lavoie J, Teranishi T, Kishimoto A, El Khakani MA. Colossal Dielectric Constant of Nanocrystalline/Amorphous Homo-Composite BaTiO 3 Films Deposited via Pulsed Laser Deposition Technique. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1677. [PMID: 39453013 PMCID: PMC11510155 DOI: 10.3390/nano14201677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2024] [Revised: 09/28/2024] [Accepted: 10/16/2024] [Indexed: 10/26/2024]
Abstract
We report the pulsed laser deposition (PLD) of nanocrystalline/amorphous homo-composite BaTiO3 (BTO) films exhibiting an unprecedented combination of a colossal dielectric constant (εr) and extremely low dielectric loss (tan δ). By varying the substrate deposition temperature (Td) over a wide range (300-800 °C), we identified Td = 550 °C as the optimal temperature for growing BTO films with an εr as high as ~3060 and a tan δ as low as 0.04 (at 20 kHz). High-resolution transmission electron microscopy revealed that the PLD-BTO films consist of BTO nanocrystals (~20-30 nm size) embedded within an otherwise amorphous BTO matrix. The impressive dielectric behavior is attributed to the combination of highly crystallized small BTO nanograins, which amplify interfacial polarization, and the surrounding amorphous matrix, which effectively isolates the nanograins from charge carrier transport. Our findings could facilitate the development of next-generation integrated dielectric devices.
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Affiliation(s)
- Shinya Kondo
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan; (T.M.); (A.K.)
| | - Taichi Murakami
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan; (T.M.); (A.K.)
| | - Loick Pichon
- Institut National de la Recherche Scientifique (INRS), Centre Énergie, Matériaux et Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, QC J3X 1P7, Canada; (L.P.); (J.L.-L.)
| | - Joël Leblanc-Lavoie
- Institut National de la Recherche Scientifique (INRS), Centre Énergie, Matériaux et Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, QC J3X 1P7, Canada; (L.P.); (J.L.-L.)
| | - Takashi Teranishi
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan; (T.M.); (A.K.)
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
| | - Akira Kishimoto
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan; (T.M.); (A.K.)
| | - My Ali El Khakani
- Institut National de la Recherche Scientifique (INRS), Centre Énergie, Matériaux et Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, QC J3X 1P7, Canada; (L.P.); (J.L.-L.)
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Enhanced resistive switching characteristics in Pt/BaTiO 3/ITO structures through insertion of HfO 2:Al 2O 3 (HAO) dielectric thin layer. Sci Rep 2017; 7:46350. [PMID: 28397865 PMCID: PMC5387719 DOI: 10.1038/srep46350] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2016] [Accepted: 11/30/2016] [Indexed: 11/24/2022] Open
Abstract
An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
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