Fully gravure printed complementary carbon nanotube TFTs for a clock signal generator using an epoxy-imine based cross-linker as an n-dopant and encapsulant

Tuning the charge carrier polarity of roll-to-roll gravure printed carbon nanotube-based thin film transistors by an atomic layer deposited alumina nanolayer

Charge carrier polarity tuning in printed thin film transistors (TFTs) is a crucial step in order to obtain complementary printed devices. In this work, we studied the effect of an Al₂O₃ passivation layer on printed single-walled carbon nanotube (SWCNT) based TFTs to tune the charge carrier polarity. By varying the atomic layer deposition (ALD) temperature and Al₂O₃ layer thickness, we can tune the doping degree of Al₂O₃ to tailor the polarity of printed SWCNT-based TFTs (SWCNT-TFTs). The precise control of threshold voltage (V_th) and polarity from p-type to well-balanced ambipolar, and n-type SWCNT-TFTs is successfully demonstrated with high repeatability by optimizing the ALD temperature and Al₂O₃ layer thickness based on 20 printed samples per test. As a proof-of-concept, inverter logic circuits using the SWCNT-TFT with different polarity types are demonstrated. The ambipolar device-based inverter exhibits a voltage gain of 3.9 and the CMOS-based inverter exhibits a gain of approximately 4.3, which is comparable to the current roll-to-roll (R2R) printed inverter circuits. Different thicknesses of Al₂O₃ layer, coated by the ALD at different temperatures and thicknesses, provide a deep understanding of the device fabrication and control process to implement the tailored doping method to efficiently realize R2R printed SWCNT-TFT-based complementary electronic devices.

Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

The threshold voltage (V_th ) adjustment of complementary metal-oxide-semiconductor (CMOS) thin film transistors (TFTs) is one of the research hotspots due to its key role in energy consumption control of CMOS circuits. Here, ultralow-power flexible CMOS circuits based on well-matched enhancement-mode (E-mode) CMOS single-walled carbon nanotube (SWCNT) TFTs are successfully achieved through tuning the work function of gate electrodes, electron doping, and printing techniques. E-mode P-type CMOS SWCNT TFTs with the full-solution procedure are first obtained through decreasing the work function of Ag gate electrodes directly caused by the deposition of bismuth iodide (BiI₃ )-doped solid-state electrolyte dielectrics. After synthetic optimization of dielectric compositions and semiconductor printing process, the flexible printed E-mode SWCNT TFTs show the high I_on /I_off ratios of ≈10⁶ , small subthreshold swing (SS) of 70-85 mV dec^-1 , low operating voltages of ≈0.5 to -1.5 V, good stability and excellent mechanical flexibility during 10 000 bending cycles. E-mode N-type SWCNT TFTs are then selectively achieved via printing the polarity conversion ink (2-Amino-2-methyl-1-propanol (AMP)  as electron  doping agent) in P- type TFT channels. Last, printed SWCNT CMOS inverters are successfully constructed with full rail-to-rail output characteristics and the record unit static power consumption of 6.75 fW µm^-1 at V_DD of 0.2 V.

Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride

Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h.

Printable inks and deformable electronic array devices

Deformable printed electronic array devices are expected to revolutionize next-generation electronics. However, although remarkable technological advances in printable inks and deformable electronic array devices have recently been achieved, technical challenges remain to commercialize these technologies. In this review article a brief introduction to printing methods highlighting significant research studies on ink formation for conductors, semiconductors, and insulators is provided, and the structural design and successful printing strategies of deformable electronic array devices are described. Successful device demonstrations are presented in the applications of passive- and active-matrix array devices. Finally, perspectives and technological challenges to be achieved are pointed out to print practically available deformable devices.

Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications

Printing technologies have attracted significant attention owing to their potential use in the low-cost manufacturing of custom or large-area flexible electronics. Among the many printable electronic materials that have been explored, semiconducting carbon nanotubes (CNTs) have shown increasing promise based on their exceptional electrical and mechanical properties, relative stability in air, and compatibility with several printing techniques to form semiconducting thin films. These attractive attributes make printed CNT thin films promising for applications including, but not limited to, sensors and display backplanes - at the heart of which is electronics' most versatile device: the transistor. In this review, we present a summary of recent advancements in the field of printed carbon nanotube thin-film transistors (CNT-TFTs). In addition to an introduction of different printing techniques, together with their strengths and limitations, we discuss key aspects of ink/material selection and processing of various device components, including the CNT channels, contacts, and gate insulators. It is clear that printed CNT-TFTs are rapidly advancing, but there remain challenges, which are discussed along with current techniques to resolve them and future developments towards practical applications from these devices. There has been interest in low-cost, printable transistors for many years and the CNT-TFTs show great promise for delivering, but will not become a reality without further research advancement.

Organic field-effect transistor-based flexible sensors

Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.