Large area growth of vertically aligned luminescent MoS2 nanosheets

Vertical heterostructure of graphite-MoS2 for gas sensing

2D materials, given their form-factor, high surface-to-volume ratio, and chemical functionality have immense use in sensor design. Engineering 2D heterostructures can result in robust combinations of desirable properties but sensor design methodologies require careful considerations about material properties and orientation to maximize sensor response. This study introduces a sensor approach that combines the excellent electrical transport and transduction properties of graphite film with chemical reactivity derived from the edge sites of semiconducting molybdenum disulfide (MoS2) through a two-step chemical vapour deposition method. The resulting vertical heterostructure shows potential for high-performance hybrid chemiresistors for gas sensing. This architecture offers active sensing edge sites across the MoS2 flakes. We detail the growth of vertically oriented MoS2 over a nanoscale graphite film (NGF) cross-section, enhancing the adsorption of analytes such as NO2, NH3, and water vapor. Raman spectroscopy, density functional theory calculations and scanning probe methods elucidate the influence of chemical doping by distinguishing the role of MoS2 edge sites relative to the basal plane. High-resolution imaging techniques confirm the controlled growth of highly crystalline hybrid structures. The MoS2/NGF hybrid structure exhibits exceptional chemiresistive responses at both room and elevated temperatures compared to bare graphitic layers. Quantitative analysis reveals that the sensitivity of this hybrid sensor surpasses other 2D material hybrids, particularly in parts per billion concentrations.

Synthesis and Sensing Performance of Chitin Fiber/MoS2 Composites

In this study, chitin fibers (CFs) were combined with molybdenum sulfide (MoS₂) to develop high-performance sensors, and chitin carbon materials were innovatively introduced into the application of gas sensing. MoS₂/CFs composites were synthesized via a one-step hydrothermal method. The surface properties of the composites were greatly improved, and the fire resistance effect was remarkable compared with that of the chitin monomer. In the gas-sensitive performance test, the overall performance of the MoS₂/CFs composite was more than three times better than that of the MoS₂ monomer and showed excellent long-term stability, with less than 10% performance degradation in three months. Extending to the field of strain sensing, MoS₂/CFs composites can realize real-time signal conversion in tensile and motion performance tests, which can help inspectors make analytical judgments in response to the analysis results. The extensive application of sensing materials in more fields is expected to be further developed. Based on the recycling of waste chitin textile materials, this paper expands the potential applications of chitin materials in the fields of gas monitoring, biomedicine, behavioral discrimination and intelligent monitoring.

One-step chemically vapor deposited hybrid 1T-MoS2/2H-MoS2 heterostructures towards methylene blue photodegradation

The photocatalytic degradation of methylene blue is a straightforward and cost-effective solution for water decontamination. Although many materials have been reported so far for this purpose, the proposed solutions inflicted high fabrication costs and low efficiencies. Here, we report on the synthesis of tetragonal (1T) and hexagonal (2H) mixed molybdenum disulfide (MoS2) heterostructures for an improved photocatalytic degradation efficiency by means of a single-step chemical vapor deposition (CVD) technique. We demonstrate that the 1T-MoS2/2H-MoS2 heterostructures exhibited a narrow bandgap ∼ 1.7 eV, and a very low reflectance (<5%) under visible-light, owing to their particular vertical micro-flower-like structure. We exfoliated the CVD-synthesised 1T-MoS2/2H-MoS2 films to assess their photodegradation properties towards the standard methylene blue dye. Our results showed that the photo-degradation rate-constant of the 1T-MoS2/2H-MoS2 heterostructures is much greater under UV excitation (i.e., 12.5 × 10-3 min-1) than under visible light illumination (i.e., 9.2 × 10-3 min-1). Our findings suggested that the intermixing of the conductive 1T-MoS2 with the semi-conducting 2H-MoS2 phases favors the photogeneration of electron-hole pairs. More importantly, it promotes a higher efficient charge transfer, which accelerates the methylene blue photodegradation process.

Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors

Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS2 orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 °C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS2 contributes to the excellent quality growth of deposited MoS2. Following this, an n-MoS2/p-GaN heterostructure PD was successfully built by a MoS2 position-selectivity method. We report a highly sensitive and self-powered GaN/MoS2 p-n heterojunction PD with a relatively high responsivity of 14.3 A W-1, a high specific detectivity of 1.12 × 1013 Jones, and a fast response speed of 8.3/13.4 μs (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS2/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs.

Broadband photodetection using one-step CVD-fabricated MoS2/MoO2 microflower/microfiber heterostructures

Molybdenum disulfide (MoS₂) has been combined so far with other photodetecting semiconductors as an enhancing agent owing to its optical and electronic properties. Existing approaches demonstrated MoS₂-incorporated photodetector devices using complex and costly fabrication processes. Here, we report on simplified one-step on the chemical vapor deposition (CVD) based synthesis of a unique microfiber/microflower MoS₂-based heterostructure formed by capturing MoO₂ intermediate material during the CVD process. This particular morphology engenders a material chemical and electronic interplay exalting the heterostructure absorption up to ~ 98% over a large spectral range between 200 and 1500 nm. An arsenal of characterization methods were used to elucidate the properties of these novel heterostructures including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry, high-resolution transmission and scanning electron microscopies, and Kelvin probe force microscopy. Our findings revealed that the MoS₂ and the MoO₂ crystallize in the hexagonal and monoclinic lattices, respectively. The integration of the MoS₂/MoO₂ heterostructures into functional photodetectors revealed a strong photoresponse under both standard sun illumination AM1.5G and blue light excitation at 450 nm. Responsivity and detectivity values as high as 0.75 mA W^-1 and 1.45 × 10⁷ Jones, respectively, were obtained with the lowest light intensity of 20 mW cm^-2 at only 1 V bias. These results demonstrate the high performances achieved by the unique MoS₂/MoO₂ heterostructure for broadband light harvesting and pave the way for their adoption in photodetection applications.

Photoelectrochemical Enhancement of Graphene@WS2 Nanosheets for Water Splitting Reaction

Tungsten disulfide nanosheets were successfully prepared by one-step chemical vapor deposition using tungsten oxide and thiourea in an inert gas environment. The size of the obtained nanosheets was subsequently reduced down to below 20 nm in width and 150 nm in length using high-energy ball milling, followed by 0.5 and 1 wt% graphene loading. The corresponding vibrational and structural characterizations are consistent with the fabrication of a pure WS₂ structure for neat sampling and the presence of the graphene characteristic vibration modes in graphene@WS₂ compounds. Additional morphological and crystal structures were examined and confirmed by high-resolution electron microscopy. Subsequently, the investigations of the optical properties evidenced the high optical absorption (98%) and lower band gap (1.75 eV) for the graphene@WS₂ compared to the other samples, with good band-edge alignment to water-splitting reaction. In addition, the photoelectrochemical measurements revealed that the graphene@WS₂ (1 wt%) exhibits an excellent photocurrent density (95 μA/cm² at 1.23 V bias) compared with RHE and higher applied bias potential efficiency under standard simulated solar illumination AM1.5G. Precisely, graphene@WS₂ (1 wt%) exhibits 3.3 times higher performance compared to pristine WS₂ and higher charge transfer ability, as measured by electrical impedance spectroscopy, suggesting its potential use as an efficient photoanode for hydrogen evolution reaction.

Single-Layer MoS2-MoO3-x Heterojunction Nanosheets with Simultaneous Photoluminescence and Co-Photocatalytic Features

Single-layer MoS2-MoO3-x heterojunction nanosheets with visible-light-sensitive band gap energy and average lateral dimensions of ~70 nm were synthesized by using a two-step combined exfoliation method. The exfoliation was initiated from pristine MoS2, while some sulfur sites in expanded MoS2 sheets during exfoliating were substituted by ambient non-thermal oxygen, resulting in formation of α-MoO3-x crystalline domains. The morphological features, crystalline structure, phase formation, number of layers, and optical properties of the MoS2-MoO3-x nanosheets were determined by atomic force microscopy; X-ray diffraction; field emission electron microscopy; transmission electron microscopy; and Raman, UV–visible–NIR, diffuse transmittance, and photoluminescence spectroscopies. The produced α-MoO3-x domains displayed a narrower indirect band gap energy (~1.95 eV) than that of stoichiometric MoO3 (~3 eV), and a broad light absorption range from visible to near-infrared region can act as a plasmonic material facilitating the separation of the photoinduced carriers and enhancing the photocatalytic activity of the MoS2 domain, having ~1.75(2.16) eV indirect (direct) band gap energy. In this regard, the MoS2-MoO3-x heterojunction nanosheets showed single-layer-based excitation-dependent luminescence emissions and visible-light-induced photocatalytic features, at the same time. This study can contribute to promising applications of sheet-like nanomaterials for purposes requiring simultaneous photoluminescence and photocatalytic features, such as in-vivo monitoring and targeting.

Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets

Laminated metal dichalcogenides are candidates for different potential applications ranging from catalysis to nanoelectronics. However, efforts are still needed to optimize synthesis methods aiming to control the number of layers, morphology, and crystallinity, parameters that govern the properties of the synthesized materials. Another important parameter is the thickness and the length of the samples with the possibility of large-scale growth of target homogeneous materials. Here, we report a chemical vapor deposition method at atmospheric pressure to produce vertically aligned tin dichalcogenide based-materials. Tin disulfide (SnS2) and tin diselenide (SnSe2) vertically aligned nanosheets have been synthesized and characterized by different methods showing their crystallinity and purity. Homogenous crystalline 2H-phase SnS2 nanosheets with high purity were synthesized with vertical orientation on substrates; sulfur vacancies were observed at the edges of the sheets. Similarly, in the crystalline 2H phase SnSe2 nanosheets selenium vacancies were observed at the edges. Moreover, these nanosheets are larger than the SnS2 nanosheets, show lower nanosheet homogeneity on substrates and contamination with selenium atoms from the synthesis was observed. The synthesized nanomaterials are interesting in various applications where the edge accessibility and/or directionality of the nanosheets play a major role as for example in gas sensing or field emission.

Recent Progress in the Synthesis of MoS2 Thin Films for Sensing, Photovoltaic and Plasmonic Applications: A Review

In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.

Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template

Two-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S-O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S-O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S-O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.

The improved photocatalytic activity of highly expanded MoS2 under visible light emitting diodes

Photocatalytic degradation is a promising method to remove organic pollutants from water. Photocatalysts based on two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS₂ nanomaterials have gained tremendous popularity. This is due to their narrow band gap and high visible light absorption. Herein, a MoS₂ photocatalyst with highly expanded interlayer spaces of 1.51 nm was synthesized in the presence of Pluronic F-127 as a template by a facile one-pot hydrothermal method. This expanded MoS₂ (MF-1) managed to photodegrade 98% (2.62 × 10^-2 min^-1) of methylene blue (MB) dye under irradiation of 1 W visible light-emitting diode (LED) white light. The dominant performance of MF-1 is attributed to the highly expanded interlayer spacing, which exposed more active edge sites. Moreover, the formation of surface defects such as surface cracks and sulfur vacancies (Sv) facilitates the adsorption capacity and in situ generation of reactive oxygen species (ROS). The dominant ROS responsible for the photodegradation of MB is superoxide radical (˙O₂ ^-). The photocatalyst shows good recyclability without deterioration even after five consecutive cycles.

Robust Sample Preparation of Large-Area In- and Out-of-Plane Cross Sections of Layered Materials with Ultramicrotomy

Layered materials (LMs) such as graphene or MoS2 have attracted a great deal of interest recently. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis and covalent bonds in the in-plane direction. A central requirement to access the structural information on complex nanostructures built upon LMs is to control the relative orientation of each sample prior to their inspection, e.g., with transmission electron microscopy (TEM). However, developing sample preparation methods that result in large inspection areas and ensure full control over the sample orientation while avoiding damage during the transfer to the TEM grid is challenging. Here, we demonstrate the feasibility of deploying ultramicrotomy for the preparation of LM samples in TEM analyses. We show how ultramicrotomy leads to the reproducible large-scale production of both in-plane and out-of-plane cross sections, with bulk vertically oriented MoS2 and WS2 nanosheets as a proof of concept. The robustness of the prepared samples is subsequently verified by their characterization by means of both high-resolution TEM and Raman spectroscopy measurements. Our approach is fully general and should find applications for a wide range of materials as well as of techniques beyond TEM, thus paving the way to the systematic large-area mass-production of cross-sectional specimens for structural and compositional studies.

Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes

The development of MoS₂ with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS₂ layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS₂ (SL-MoS₂) with vertically aligned nanoflakes grown by a CVD process. Treatment with oxygen plasma results in the formation of a substoichiometric phase of MoO_x in the vertical nanoflakes, which exhibit a high electron density of 4.5 × 10¹³ cm^-2. The substoichiometric MoO_x with a high electron-doping level that is locally present on the SL-MoS₂ surface induces an absorption band in the near-infrared (NIR) wavelength range of 1000-1750 nm because of the plasmon resonances. Finally, we demonstrate the enhancement of photodetection ability by broadening the detection range from the visible region to the NIR region in oxygen-treated SL-MoS₂ with vertically aligned nanoflakes.

Wafer-Scale Growth of 2D PtTe2 with Layer Orientation Tunable High Electrical Conductivity and Superior Hydrophobicity

Platinum ditelluride (PtTe₂) is an emerging semimetallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) crystal with intriguing band structures and unusual topological properties. Despite much devoted efforts, scalable and controllable synthesis of large-area 2D PtTe₂ with well-defined layer orientation has not been established, leaving its projected structure-property relationship largely unclarified. Herein, we report a scalable low-temperature growth of 2D PtTe₂ layers on an area greater than a few square centimeters by reacting Pt thin films of controlled thickness with vaporized tellurium at 400 °C. We systematically investigated their thickness-dependent 2D layer orientation as well as its correlated electrical conductivity and surface property. We unveil that 2D PtTe₂ layers undergo three distinct growth mode transitions, i.e., horizontally aligned holey layers, continuous layer-by-layer lateral growth, and horizontal-to-vertical layer transition. This growth transition is a consequence of competing thermodynamic and kinetic factors dictated by accumulating internal strain, analogous to the transition of Frank-van der Merwe (FM) to Stranski-Krastanov (SK) growth in epitaxial thin-film models. The exclusive role of the strain on dictating 2D layer orientation has been quantitatively verified by the transmission electron microscopy (TEM) strain mapping analysis. These centimeter-scale 2D PtTe₂ layers exhibit layer orientation tunable metallic transports yielding the highest value of ∼1.7 × 10⁶ S/m at a certain critical thickness, supported by a combined verification of density functional theory (DFT) and electrical measurements. Moreover, they show intrinsically high hydrophobicity manifested by the water contact angle (WCA) value up to ∼117°, which is the highest among all reported 2D TMDCs of comparable dimensions and geometries. Accordingly, this study confirms the high material quality of these emerging large-area 2D PtTe₂ layers, projecting vast opportunities employing their tunable layer morphology and semimetallic properties from investigations of novel quantum phenomena to applications in electrocatalysis.

Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics

Electronic and dielectric properties of vapor-phase grown MoS₂ have been investigated in metal/MoS₂/silicon capacitor structures by capacitance-voltage and conductance-voltage techniques. Analytical methods confirm the MoS₂ layered structure, the presence of interfacial silicon oxide (SiO _x ) and the composition of the films. Electrical characteristics in combination with theoretical considerations quantify the concentration of electron states at the interface between Si and a 2.5-3 nm thick silicon oxide interlayer between Si and MoS₂. Measurements under electric field stress indicate the existence of mobile ions in MoS₂ that interact with interface states. On the basis of time-of-flight secondary ion mass spectrometry, we propose OH^- ions as probable candidates responsible for the observations. The dielectric constant of the vapor-phase grown MoS₂ extracted from CV measurements at 100 kHz is 2.6 to 2.9. The present study advances the understanding of defects and interface states in MoS₂. It also indicates opportunities for ion-based plasticity in 2D material devices for neuromorphic computing applications.

Three dimensionally-ordered 2D MoS2 vertical layers integrated on flexible substrates with stretch-tunable functionality and improved sensing capability

The intrinsically anisotropic crystallinity of two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers enables a variety of intriguing material properties which strongly depend on the physical orientation of constituent 2D layers. For instance, 2D TMDs with vertically-aligned layers exhibit numerous dangling bonds on their 2D layer edge sites predominantly exposed on the surface, projecting significantly improved physical and/or chemical adsorption capability compared to their horizontally-oriented 2D layer counterparts. Such property advantages can be further promoted as far as the material can be integrated onto unconventional substrates of tailored geometry/functionality, offering vast opportunities for a wide range of applications which demand enhanced surface area/reactivity and mechanical flexibility. Herein, we report a new form of 2D TMDs, i.e., three-dimensionally ordered 2D molybdenum disulfide (2D MoS2) with vertically-aligned layers integrated on elastomeric substrates and explore their tunable multi-functionalities and technological promise. We grew large-scale (>2 cm2) vertically-aligned 2D MoS2 layers using a three-dimensionally patterned silicon dioxide (SiO2) template and directly transferred/integrated them onto flexible polydimethylsiloxane (PDMS) substrates by taking advantage of the distinguishable water-wettability of 2D MoS2vs. SiO2. The excellent structural integrity of the integrated vertical 2D MoS2 layers was confirmed by extensive spectroscopy/microscopy characterization. In addition, the stretch-driven unique tunability of their optical and surface properties was also examined. Moreover, we applied this material for flexible humidity sensing and identified significantly improved (>10 times) sensitivity over conventionally-designed horizontal 2D MoS2 layers, further confirming their high potential for unconventional flexible technologies.

Toward the use of CVD-grown MoS2 nanosheets as field-emission source

Densely populated edge-terminated vertically aligned two-dimensional MoS₂ nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO₂ by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 µA/cm² was measured. The low turn-on field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS₂ with sharp and exposed edges. Our findings show that the fabricated MoS₂ NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.

Morphological Evolution of Vertically Standing Molybdenum Disulfide Nanosheets by Chemical Vapor Deposition

In this study, we demonstrated the chemical vapor deposition (CVD) of vertically standing molybdenum disulfide (MoS₂) nanosheets, with an unconventional combination of molybdenum hexacarbonyl (Mo(CO)₆) and 1,2-ethanedithiol (C₂H₆S₂) as the novel kind of Mo and S precursors respectively. The effect of the distance between the precursor’s outlet and substrates (denoted as d) on the growth characteristics of MoS₂, including surface morphology and nanosheet structure, was investigated. Meanwhile, the relationship between the structure characteristics of MoS₂ nanosheets and their catalytic performance for hydrogen evolution reaction (HER) was elucidated. The formation of vertically standing nanosheets was analyzed and verified by means of an extrusion growth model. The crystallinity, average length, and average depth between peak and valley (Rz) of MoS₂ nanosheets differed depending on the spatial location of the substrate. Good crystalized MoS₂ nanosheets grown at d = 5.5 cm with the largest average length of 440 nm, and the highest Rz of 162 nm contributed to a better HER performance, with a respective Tafel slope and exchange current density of 138.9 mV/decade, and 22.6 μA/cm² for raw data (127.8 mV/decade and 19.3 μA/cm² for iR-corrected data).

Noble metal-coated MoS2 nanofilms with vertically-aligned 2D layers for visible light-driven photocatalytic degradation of emerging water contaminants

Two-dimensional molybdenum disulfide (2D MoS2) presents extraordinary optical, electrical, and chemical properties which are highly tunable by engineering the orientation of constituent 2D layers. 2D MoS2 films with vertically-aligned layers exhibit numerous 2D edge sites which are predicted to offer superior chemical reactivity owing to their enriched dangling bonds. This enhanced chemical reactivity coupled with their tunable band gap energy can render the vertical 2D MoS2 unique opportunities for environmental applications that go beyond the conventional applications of horizontal 2D MoS2 in electronics/opto-electronics. Herein, we report that MoS2 films with vertically-aligned 2D layers exhibit excellent visible light responsive photocatalytic activities for efficiently degrading organic compounds in contaminated water such as harmful algal blooms. We demonstrate the visible light-driven rapid degradation of microcystin-LR, one of the most toxic compounds produced by the algal blooms, and reveal that the degradation efficiency can be significantly improved by incorporating noble metals. This study suggests a high promise of these emerging 2D materials for water treatment, significantly broadening their versatility for a wide range of energy and environmental applications.

Effect of rapid thermal annealing on crystallization and stress relaxation of SiGe nanoparticles deposited by ICP PECVD

This work demonstrates the viability of direct fabrication utilizing a single (deposition/anneal) process for polycrystalline silicon germanium sub-micro particles.