1
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Yuan H, Xu R, Ren J, Yang J, Wang S, Tian D, Fu Y, Li Q, Peng X, Wang X. Anisotropic charge transfer and gate tuning for p-SnS/n-MoS 2 vertical van der Waals diodes. NANOSCALE 2023; 15:15344-15351. [PMID: 37698246 DOI: 10.1039/d3nr03508e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS2, and a high rectification ratio of 3.1 × 104 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect.
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Affiliation(s)
- Hui Yuan
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Ruihan Xu
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Jiale Ren
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Jielin Yang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Shouyang Wang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Dongwen Tian
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Yingshuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Quan Li
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China.
| | - Xiaoniu Peng
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
| | - Xina Wang
- School of Physics and Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei University, Wuhan, 430062, China.
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2
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Wang Z, Tripathi M, Golsanamlou Z, Kumari P, Lovarelli G, Mazziotti F, Logoteta D, Fiori G, Sementa L, Marega GM, Ji HG, Zhao Y, Radenovic A, Iannaccone G, Fortunelli A, Kis A. Substitutional p-Type Doping in NbS 2 -MoS 2 Lateral Heterostructures Grown by MOCVD. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209371. [PMID: 36644893 DOI: 10.1002/adma.202209371] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 12/30/2022] [Indexed: 06/17/2023]
Abstract
Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS2 , which is crucial for complementary logic applications but remains difficult. In this work, high-quality NbS2 -MoS2 lateral heterostructures are synthesized by one-step metal-organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of ≈104 , exceeding previously reported values. The band structure through the NbS2 -MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices.
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Affiliation(s)
- Zhenyu Wang
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Zahra Golsanamlou
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Poonam Kumari
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Giuseppe Lovarelli
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
- Department of Physics "E. Fermi", Università di Pisa, Pisa, I-56127, Italy
| | - Fabrizio Mazziotti
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Demetrio Logoteta
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Gianluca Fiori
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Luca Sementa
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Guilherme Migliato Marega
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Hyun Goo Ji
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Yanfei Zhao
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Aleksandra Radenovic
- Institute of Bioengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Giuseppe Iannaccone
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Alessandro Fortunelli
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
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3
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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4
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Och M, Anastasiou K, Leontis I, Zemignani GZ, Palczynski P, Mostaed A, Sokolikova MS, Alexeev EM, Bai H, Tartakovskii AI, Lischner J, Nellist PD, Russo S, Mattevi C. Synthesis of mono- and few-layered n-type WSe 2 from solid state inorganic precursors. NANOSCALE 2022; 14:15651-15662. [PMID: 36189726 PMCID: PMC9631355 DOI: 10.1039/d2nr03233c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/12/2022] [Accepted: 09/05/2022] [Indexed: 06/16/2023]
Abstract
Tuning the charge transport properties of two-dimensional transition metal dichalcogenides (TMDs) is pivotal to their future device integration in post-silicon technologies. To date, co-doping of TMDs during growth still proves to be challenging, and the synthesis of doped WSe2, an otherwise ambipolar material, has been mainly limited to p-doping. Here, we demonstrate the synthesis of high-quality n-type monolayered WSe2 flakes using a solid-state precursor for Se, zinc selenide. n-Type transport has been reported with prime electron mobilities of up to 10 cm2 V-1 s-1. We also demonstrate the tuneability of doping to p-type transport with hole mobilities of 50 cm2 V-1 s-1 after annealing in air. n-Doping has been attributed to the presence of Zn adatoms on the WSe2 flakes as revealed by X-ray photoelectron spectroscopy (XPS), spatially resolved time of flight secondary ion mass spectroscopy (SIMS) and angular dark-field scanning transmission electron microscopy (AD-STEM) characterization of WSe2 flakes. Monolayer WSe2 flakes exhibit a sharp photoluminescence (PL) peak at room temperature and highly uniform emission across the entire flake area, indicating a high degree of crystallinity of the material. This work provides new insight into the synthesis of TMDs with charge carrier control, to pave the way towards post-silicon electronics.
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Affiliation(s)
- Mauro Och
- Department of Materials, Imperial College London, London, SW7 2AZ, UK.
| | | | - Ioannis Leontis
- Department of Physics and Astronomy, University of Exeter, Exeter, EX4 4QL, UK
| | - Giulia Zoe Zemignani
- Department of Materials, Imperial College London, London, SW7 2AZ, UK.
- Center for Nano Science and Technology, Milan, Italy
| | - Pawel Palczynski
- Department of Materials, Imperial College London, London, SW7 2AZ, UK.
| | - Ali Mostaed
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | | | - Evgeny M Alexeev
- Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, UK
| | - Haoyu Bai
- Department of Materials, Imperial College London, London, SW7 2AZ, UK.
| | | | - Johannes Lischner
- Department of Materials, Imperial College London, London, SW7 2AZ, UK.
- Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London, SW7 2AZ, UK
| | - Peter D Nellist
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | - Saverio Russo
- Department of Physics and Astronomy, University of Exeter, Exeter, EX4 4QL, UK
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, London, SW7 2AZ, UK.
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5
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Shen D, Zhao B, Zhang Z, Zhang H, Yang X, Huang Z, Li B, Song R, Jin Y, Wu R, Li B, Li J, Duan X. Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2. ACS NANO 2022; 16:10623-10631. [PMID: 35735791 DOI: 10.1021/acsnano.2c02214] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe2) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe2 monolayer. The Fe-doped MoSe2 monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl3/Na2MoO4. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe2 monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe2 samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe2 field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.
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Affiliation(s)
- Dingyi Shen
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
- School of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Rong Song
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Yejun Jin
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bo Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
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6
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Seravalli L, Bosi M. A Review on Chemical Vapour Deposition of Two-Dimensional MoS 2 Flakes. MATERIALS (BASEL, SWITZERLAND) 2021; 14:7590. [PMID: 34947186 PMCID: PMC8704647 DOI: 10.3390/ma14247590] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 12/02/2021] [Accepted: 12/07/2021] [Indexed: 12/13/2022]
Abstract
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.
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Affiliation(s)
- Luca Seravalli
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
| | - Matteo Bosi
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
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7
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Hole doping effect of MoS 2 via electron capture of He + ion irradiation. Sci Rep 2021; 11:23590. [PMID: 34880289 PMCID: PMC8654839 DOI: 10.1038/s41598-021-02932-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Accepted: 11/23/2021] [Indexed: 01/02/2023] Open
Abstract
Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He+ ion irradiation: converting n-type MoS2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He+ ion irradiation is valid for supported bilayer MoS2; however, it is limited at supported monolayer MoS2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He+ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He+ ion irradiation.
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8
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Raza A, Qumar U, Haider A, Naz S, Haider J, Ul-Hamid A, Ikram M, Ali S, Goumri-Said S, Kanoun MB. Liquid-phase exfoliated MoS 2 nanosheets doped with p-type transition metals: a comparative analysis of photocatalytic and antimicrobial potential combined with density functional theory. Dalton Trans 2021; 50:6598-6619. [PMID: 33899890 DOI: 10.1039/d1dt00236h] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
Abstract
MoS2 nanosheets were developed by undertaking the liquid-phase exfoliation of bulk counterparts. In order to enhance its photocatalytic properties, the host material was doped with p-type transition metals (i.e., Ag, Co, Bi, and Zr). The hydrothermal technique was used to produce samples doped with 7.5 wt% transition metals (TM). X-ray diffraction detected the existence of 2H-phase by mirroring its reflection at 2θ ∼ 14°, while the peak distribution revealed the degree of exfoliation in samples. Low PL intensities indicated a lower recombination of electron-hole pairs, as corroborated by a high degree of photocatalytic action. Raman analysis was undertaken to identify molecular vibrations. The A1g mode in Raman spectra consistently showed a blueshift in all samples and the E12g mode was only slightly affected, which is evidence of the p-type doping in the MoS2 nanosheets. In the XPS spectrum, two characteristic peaks of Mo 3d appeared at 229.87 and 233.03 eV assigned to Mo-3d5/2 and Mo-3d3/2, respectively. Furthermore, a microstructural examination with HR-TEM and FESEM divulged a thin-layered structure of MoS2 consisting of flat, gently curved or twisted nanosheets. Diverse morphologies were observed with a non-uniform distribution of the dopant. Photocatalytic action of the TM-doped products effectively degraded methylene blue (MB) concentrations of up to 94 percent (for Ag-MoS2). The synergistic effect of doped MoS2 nanosheets against S. aureus in comparison to E. coli bacteria was also evaluated. The efficacy % age improved from (0-31.7%) and (23.5-55.2%) against E. coli, and (0-34.2%) and (8.3-69.23%) against S. aureus. Moreover, results from first principles calculations indicate that substitutional doping of TM atoms is indeed advantageous. Theoretical calculations confirmed that doping with Ag, Co, Bi, and Zr leads to a decrease in the band gap to a certain degree, in which the conduction band edge shifts toward lower energy, while the valence band shifts closer to the high energy end. It can be concluded that Ag, Co, and Bi impurities can lead to beneficial p-type doping in MoS2 monolayered structures. With regards to doping with Zr, the acceptor levels are formed above the edge of the valence band, revealing an introduction of the p-type character.
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Affiliation(s)
- Ali Raza
- Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, 14 Ali Road, Lahore, Pakistan
| | - Usman Qumar
- Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, 14 Ali Road, Lahore, Pakistan
| | - Ali Haider
- Department of Clinical Medicine and Surgery, University of Veterinary and Animal Sciences, Lahore 54000, Punjab, Pakistan
| | - Sadia Naz
- Tianjin Institute of Industrial Biotechnology, Chinese Academy of Sciences, Tianjin 300308, China
| | - Junaid Haider
- Tianjin Institute of Industrial Biotechnology, Chinese Academy of Sciences, Tianjin 300308, China
| | - Anwar Ul-Hamid
- Core Research Facilities, King Fahd University of Petroleum & Minerals, Dhahran, 31261, Saudi Arabia
| | - Muhammad Ikram
- Solar Cell Applications Research Lab, Department of Physics, Government College University Lahore, 54000, Punjab, Pakistan.
| | - Salamat Ali
- Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, 14 Ali Road, Lahore, Pakistan
| | - Souraya Goumri-Said
- College of Science, Physics Department, Alfaisal University, P.O. Box 50927, Riyadh 11533, Saudi Arabia
| | - Mohammed Benali Kanoun
- Department of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa, 31982, Saudi Arabia.
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9
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Li M, Yao J, Wu X, Zhang S, Xing B, Niu X, Yan X, Yu Y, Liu Y, Wang Y. P-type Doping in Large-Area Monolayer MoS 2 by Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6276-6282. [PMID: 31937099 DOI: 10.1021/acsami.9b19864] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Molybdenum disulfide (MoS2) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses n-type conductivity in MoS2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.
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Affiliation(s)
- Mengge Li
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Jiadong Yao
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Xiaoxiang Wu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Shucheng Zhang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Boran Xing
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Xinyue Niu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Xiaoyuan Yan
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Ying Yu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Yali Liu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
| | - Yewu Wang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China
- Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , P. R. China
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Ji HG, Solís-Fernández P, Yoshimura D, Maruyama M, Endo T, Miyata Y, Okada S, Ago H. Chemically Tuned p- and n-Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1903613. [PMID: 31475400 DOI: 10.1002/adma.201903613] [Citation(s) in RCA: 54] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Revised: 08/09/2019] [Indexed: 06/10/2023]
Abstract
Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V-1 s-1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2 . The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics.
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Affiliation(s)
- Hyun Goo Ji
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka, 816-8580, Japan
| | | | | | - Mina Maruyama
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, 305-8571, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, 305-8571, Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka, 816-8580, Japan
- Global Innovation Center (GIC), Kyushu University, Fukuoka, 816-8580, Japan
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11
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Lee JS, Park CS, Kim TY, Kim YS, Kim EK. Characteristics of p-Type Conduction in P-Doped MoS 2 by Phosphorous Pentoxide during Chemical Vapor Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E1278. [PMID: 31500287 PMCID: PMC6781096 DOI: 10.3390/nano9091278] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Revised: 09/05/2019] [Accepted: 09/05/2019] [Indexed: 11/17/2022]
Abstract
We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A1g and E12g modes for both the pristine and P-doped samples was 19.4 cm-1. In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm2/V⋅s and an on/off current ratio of 103, while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm2/V⋅s and an on/off current ratio of 105. The carriers in the FET channel were identified as holes with a concentration of 1.01 × 1011 cm-2 in P-doped MoS2, while the pristine material had an electron concentration of 6.47 × 1011 cm-2.
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Affiliation(s)
- Jae Sang Lee
- Department of Physics and Research Institute of Natural Sciences, Hanyang University, Seoul 04763, Korea.
| | - Chang-Soo Park
- Department of Physics and Research Institute of Natural Sciences, Hanyang University, Seoul 04763, Korea.
| | - Tae Young Kim
- Department of Physics and Research Institute of Natural Sciences, Hanyang University, Seoul 04763, Korea.
| | - Yoon Sok Kim
- Department of Physics and Research Institute of Natural Sciences, Hanyang University, Seoul 04763, Korea.
| | - Eun Kyu Kim
- Department of Physics and Research Institute of Natural Sciences, Hanyang University, Seoul 04763, Korea.
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12
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Hedlund JK, Walker AV. Polytype control of MoS2 using chemical bath deposition. J Chem Phys 2019; 150:174701. [DOI: 10.1063/1.5089661] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023] Open
Affiliation(s)
- Jenny K. Hedlund
- Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, Texas 75080,
USA
| | - Amy V. Walker
- Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, Texas 75080,
USA
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,
USA
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13
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High Optical Response of Niobium-Doped WSe₂-Layered Crystals. MATERIALS 2019; 12:ma12071161. [PMID: 30974754 PMCID: PMC6479778 DOI: 10.3390/ma12071161] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/24/2019] [Revised: 04/02/2019] [Accepted: 04/09/2019] [Indexed: 11/16/2022]
Abstract
The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe2-layered crystals.
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14
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Li S, Chen X, Liu F, Chen Y, Liu B, Deng W, An B, Chu F, Zhang G, Li S, Li X, Zhang Y. Enhanced Performance of a CVD MoS 2 Photodetector by Chemical in Situ n-Type Doping. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11636-11644. [PMID: 30838848 DOI: 10.1021/acsami.9b00856] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Transition metal dichalcogenides (TMDs) are a category of promising two-dimensional (2D) materials for the optoelectronic devices, and their unique characteristics include tunable band gap, nondangling bonds as well as compatibility to large-scale fabrication, for instance, chemical vapor deposition (CVD). MoS2 is one of the first TMDs that is well studied in the photodetection area widely. However, the low photoresponse restricts its applications in photodetectors unless the device is applied with ultrahigh source-drain voltage ( VDS) and gate voltage ( VGS). In this work, the photoresponse of a MoS2 photodetector was improved by a chemical in situ doping method using gold chloride hydrate. The responsivity and specific detectivity were increased to 99.9 A/W and 9.4 × 1012 Jones under low VDS (0.1 V) and VGS (0 V), which are 14.6 times and 4.8 times higher than those of a pristine photodetector, respectively. The photoresponse enhancement results from chlorine n-type doping in CVD MoS2 which reduces the trapping of photoinduced electrons and promotes the photogating effect. This novel doping strategy leads to great applications of high-performance MoS2 photodetectors potentially and opens a new avenue to enhance photoresponse for other 2D materials.
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Affiliation(s)
- Songyu Li
- School of Physics and Nuclear Energy Engineering , Beihang University , Beijing 100191 , China
| | | | - Famin Liu
- School of Physics and Nuclear Energy Engineering , Beihang University , Beijing 100191 , China
| | | | | | | | | | | | | | | | - Xuhong Li
- School of Physics and Nuclear Energy Engineering , Beihang University , Beijing 100191 , China
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15
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Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T. Doping engineering and functionalization of two-dimensional metal chalcogenides. NANOSCALE HORIZONS 2019; 4:26-51. [PMID: 32254144 DOI: 10.1039/c8nh00150b] [Citation(s) in RCA: 106] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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Affiliation(s)
- Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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16
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Wang Y, Mao J, Meng X, Yu L, Deng D, Bao X. Catalysis with Two-Dimensional Materials Confining Single Atoms: Concept, Design, and Applications. Chem Rev 2018; 119:1806-1854. [PMID: 30575386 DOI: 10.1021/acs.chemrev.8b00501] [Citation(s) in RCA: 327] [Impact Index Per Article: 54.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Two-dimensional materials and single-atom catalysts are two frontier research fields in catalysis. A new category of catalysts with the integration of both aspects has been rapidly developed in recent years, and significant advantages were established to make it an independent research field. In this Review, we will focus on the concept of two-dimensional materials confining single atoms for catalysis. The new electronic states via the integration lead to their mutual benefits in activity, that is, two-dimensional materials with unique geometric and electronic structures can modulate the catalytic performance of the confined single atoms, and in other cases the confined single atoms can in turn affect the intrinsic activity of two-dimensional materials. Three typical two-dimensional materials are mainly involved here, i.e., graphene, g-C3N4, and MoS2, and the confined single atoms include both metal and nonmetal atoms. First, we systematically introduce and discuss the classic synthesis methods, advanced characterization techniques, and various catalytic applications toward two-dimensional materials confining single-atom catalysts. Finally, the opportunities and challenges in this emerging field are featured on the basis of its current development.
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Affiliation(s)
- Yong Wang
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China.,State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Jun Mao
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China.,State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Xianguang Meng
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China
| | - Liang Yu
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China
| | - Dehui Deng
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China.,State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China
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17
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Wang J, Jia R, Huang Q, Pan C, Zhu J, Wang H, Chen C, Zhang Y, Yang Y, Song H, Miao F, Huang R. Vertical WS 2/SnS 2 van der Waals Heterostructure for Tunneling Transistors. Sci Rep 2018; 8:17755. [PMID: 30531791 PMCID: PMC6288168 DOI: 10.1038/s41598-018-35661-4] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2018] [Accepted: 11/09/2018] [Indexed: 11/15/2022] Open
Abstract
Van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) materials have stimulated tremendous research interest in various device applications, especially in energy-efficient future-generation electronics. Such ultra-thin stacks as tunnel junction theoretically present unprecedented possibilities of tunable relative band alignment and pristine interfaces, which enable significant performance enhancement for steep-slope tunneling transistors. In this work, the optimal 2D-2D heterostructure for tunneling transistors is presented and elaborately engineered, taking into consideration both electric properties and material stability. The key challenges, including band alignment and metal-to-2D semiconductor contact resistances, are optimized separately for integration. By using a new dry transfer technique for the vertical stack, the selected WS2/SnS2 heterostructure-based tunneling transistor is fabricated for the first time, and exhibits superior performance with comparable on-state current and steeper subthreshold slope than conventional FET, as well as on-off current ratio over 106 which is among the highest value of 2D-2D tunneling transistors. A visible negative differential resistance feature is also observed. This work shows the great potential of 2D layered semiconductors for new heterostructure devices and can guide possible development of energy-efficient future-generation electronics.
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Affiliation(s)
- Jiaxin Wang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Rundong Jia
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Qianqian Huang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China.
| | - Chen Pan
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Jiadi Zhu
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Huimin Wang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Cheng Chen
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Yawen Zhang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Yuchao Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Feng Miao
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Ru Huang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China.
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18
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Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor. CRYSTALS 2018. [DOI: 10.3390/cryst8080316] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.
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19
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Pang H, Li M, Gao C, Huang H, Zhuo W, Hu J, Wan Y, Luo J, Wang W. Phase Transition of Single-Layer Molybdenum Disulfide Nanosheets under Mechanical Loading Based on Molecular Dynamics Simulations. MATERIALS 2018; 11:ma11040502. [PMID: 29584676 PMCID: PMC5951348 DOI: 10.3390/ma11040502] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2018] [Revised: 03/10/2018] [Accepted: 03/22/2018] [Indexed: 01/29/2023]
Abstract
The single-layer molybdenum disulfide (SLMoS2) nanosheets have been experimentally discovered to exist in two different polymorphs, which exhibit different electrical properties, metallic or semiconducting. Herein, molecular dynamics (MD) simulations of nanoindentation and uniaxial compression were conducted to investigate the phase transition of SLMoS2 nanosheets. Typical load-deflection curves, stress-strain curves, and local atomic structures were obtained. The loading force decreases sharply and then increases again at a critical deflection under the nanoindentation, which is inferred to the phase transition. In addition to the layer thickness, some related bond lengths and bond angles were also found to suddenly change as the phase transition occurs. A bell-like hollow, so-called residual deformation, was found to form, mainly due to the lattice distortion around the waist of the bell. The effect of indenter size on the residual hollow was also analyzed. Under the uniaxial compression along the armchair direction, a different phase transition, a uniformly quadrilateral structure, was observed when the strain is greater than 27.7%. The quadrilateral structure was found to be stable and exhibit metallic conductivity in view of the first-principle calculation.
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Affiliation(s)
- Haosheng Pang
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China.
| | - Minglin Li
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China.
- Fujian Key Laboratory of Medical Instrumentation and Pharmaceutical Technology, Fuzhou 350108, China.
- Fujian Collaborative Innovation Center of High-End Manufacturing Equipment, Fuzhou 350108, China.
| | - Chenghui Gao
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China.
- Fujian Collaborative Innovation Center of High-End Manufacturing Equipment, Fuzhou 350108, China.
| | - Haili Huang
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China.
| | - Weirong Zhuo
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China.
| | - Jianyue Hu
- Fujian Province Special Equipment Inspection Institute, Fuzhou 35002, China.
| | - Yaling Wan
- BAK Power Battery Company, Shenzhen 518000, China.
| | - Jing Luo
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China.
| | - Weidong Wang
- School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China.
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20
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Li H, Huang S, Zhang Q, Zhu Z, Li C, Meng J, Tian Y. Nonmetal doping induced electronic and magnetic properties in MoSe2 monolayer. Chem Phys Lett 2018. [DOI: 10.1016/j.cplett.2017.12.010] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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21
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Zhao Y, Wang W, Li C, He L. First-principles study of nonmetal doped monolayer MoSe 2 for tunable electronic and photocatalytic properties. Sci Rep 2017; 7:17088. [PMID: 29213061 PMCID: PMC5719077 DOI: 10.1038/s41598-017-17423-w] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2017] [Accepted: 11/24/2017] [Indexed: 12/02/2022] Open
Abstract
Recently, two dimensional transition metal dichalcogenides become popular research topics because of their unique crystal and electronic structure. In this work, the geometrical structure, electronic, electrical transport, redox potentials and photocatalytic properties of nonmetal (H, B, C, Si, N, P, As, O, S, Te, F, Cl, Br and I) doped monolayer MoSe2 were investigated by first principle calculations. The binding energy indicates that nonmetal doped MoSe2 are energetically favorable compared to Se vacancies, except B- and C-doped. We have found that nonmetal dopants with an even number of valence electrons doped MoSe2 have p-type conductivity. On the contrary, nonmetal dopants with an odd number of valence electrons doped MoSe2 have p-type or n-type conductivity; and they have better photocatalytic performance.
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Affiliation(s)
- Yafei Zhao
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wei Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Can Li
- Center for Coordination Bond Engineering, College of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, China
| | - Liang He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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22
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Kong S, Wu T, Zhuang W, Jiang P, Bao X. Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions. J Phys Chem B 2017; 122:713-720. [DOI: 10.1021/acs.jpcb.7b06379] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Shuang Kong
- State Key Laboratory
of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianmin Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- Department
of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Zhuang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Peng Jiang
- State Key Laboratory
of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
| | - Xinhe Bao
- State Key Laboratory
of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
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