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Rossi M, van Schijndel TAJ, Lueb P, Badawy G, Jung J, Peeters WHJ, Kölling S, Moutanabbir O, Verheijen MA, Bakkers EPAM. Stemless InSb nanowire networks and nanoflakes grown on InP. NANOTECHNOLOGY 2024; 35:415602. [PMID: 38991513 DOI: 10.1088/1361-6528/ad61ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 07/11/2024] [Indexed: 07/13/2024]
Abstract
Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs. This stem imposes limitations, which include restricting the size of the nanowire network, inducing disorder through grain boundaries and impurity incorporation. Here, we omit the stem allowing for the growth of stemless InSb nanowire networks on an InP substrate. To enable the growth without the stem, we show that a preconditioning step using arsine (AsH3) is required before InSb growth. High-yield of stemless nanowire growth is achieved by patterning the substrate with a selective-area mask with nanohole cavities, containing restricted gold droplets from which nanowires originate. Interestingly, these nanowires are bent, posing challenges for the synthesis of interconnecting nanowire networks due to merging failure. We attribute this bending to the non-homogeneous incorporation of arsenic impurities in the InSb nanowires and the interposed lattice-mismatch. By tuning the growth parameters, we can mitigate the bending, yielding large and single crystalline InSb nanowire networks and nanoflakes. The improved size and crystal quality of these nanostructures broaden the potential of this technique for fabricating advanced quantum devices.
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Affiliation(s)
- Marco Rossi
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Teun A J van Schijndel
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Pim Lueb
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Ghada Badawy
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Jason Jung
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Wouter H J Peeters
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Sebastian Kölling
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Marcel A Verheijen
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Eurofins Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
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2
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Szymon R, Zielony E, Sobanska M, Stachurski T, Reszka A, Wierzbicka A, Gieraltowska S, Zytkiewicz ZR. Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401139. [PMID: 39036823 DOI: 10.1002/smll.202401139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 07/02/2024] [Indexed: 07/23/2024]
Abstract
Core-shell gallium nitride (GaN)-based nanowires offer noteworthy opportunities for innovation in high-frequency opto- and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum and hafnium oxide shells. Particular attention is paid to partial coverage of nanowires, resulting with exceptional properties. First, the crystal lattice relaxation is observed by X-ray diffraction, photoluminescence, and Raman spectroscopy measurements. A high potential of partial coverage for optoelectronic applications is revealed with photo- and cathodoluminescence spectra along with an exploration of their temperature dependency. Next, the study focuses on understanding the mechanisms behind the observed enhancement of the luminescence efficiency. It is confirmed that nanowires are effectively protected against photoadsorption using partial coatings. This research advances the frontiers of nanotechnology, investigating the benefits of partial coverage, and shedding light on its complex interaction with cores.
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Affiliation(s)
- Radoslaw Szymon
- Department of Experimental Physics, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, Wroclaw, 50-370, Poland
| | - Eunika Zielony
- Department of Experimental Physics, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, Wroclaw, 50-370, Poland
| | - Marta Sobanska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
| | - Tomasz Stachurski
- Department of Statistics, Econometrics and Mathematics, University of Economics in Katowice, 1 Maja 50, Katowice, 40-287, Poland
| | - Anna Reszka
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
| | - Aleksandra Wierzbicka
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
| | - Sylwia Gieraltowska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
| | - Zbigniew R Zytkiewicz
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
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3
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Greenberg Y, Kelrich A, Cohen S, Kar-Narayan S, Ritter D, Calahorra Y. Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell. NANOMATERIALS 2019; 9:nano9091327. [PMID: 31527424 PMCID: PMC6781057 DOI: 10.3390/nano9091327] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Revised: 09/12/2019] [Accepted: 09/13/2019] [Indexed: 11/16/2022]
Abstract
Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal-organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III-V nanowire growth.
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Affiliation(s)
- Ya'akov Greenberg
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Alexander Kelrich
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Shimon Cohen
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Sohini Kar-Narayan
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK.
| | - Dan Ritter
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Yonatan Calahorra
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK.
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4
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Balaghi L, Bussone G, Grifone R, Hübner R, Grenzer J, Ghorbani-Asl M, Krasheninnikov AV, Schneider H, Helm M, Dimakis E. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch. Nat Commun 2019; 10:2793. [PMID: 31243278 PMCID: PMC6595053 DOI: 10.1038/s41467-019-10654-7] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2018] [Accepted: 05/20/2019] [Indexed: 11/09/2022] Open
Abstract
The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.
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Affiliation(s)
- Leila Balaghi
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Genziana Bussone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - Raphael Grifone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Jörg Grenzer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany.
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Peng M, Zheng X, Liu S, Wei H, He Y, Li M, An Y, Song Y, Qiu P. A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating. NANOSCALE 2019; 11:3710-3717. [PMID: 30742183 DOI: 10.1039/c8nr07946c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
III-nitride solid-state microdisplays have significant advantages, including high brightness and high resolution, for the development of advanced displays, high-definition projectors, head-mounted displays, large-capacity optical communication systems, and so forth. Herein, a high-brightness InGaN/GaN multiple-quantum-well (MQW) nanoemitter array with an ultrahigh resolution of 31 750 dpi was achieved by combining a top-down fabrication with surface passivation of plasma-enhanced atomic layer deposition (PEALD)-grown AlN coating. With regard to the nanometer-level top-down etching, the surface damage or defects on the newly-formed sidewall play a significant role in the photoluminescence (PL) quality. Note that these arrays can be effectively passivated by the PEALD-grown AlN coating with an over 345% PL enhancement. In addition, a sharp band bending at the interface of the luminescent InGaN QW and the AlN coating layer can electrically drift away the photogenerated electrons from the surface traps; this leads to enhancement of the bulk PL radiative recombination with a fast PL decay rate. Therefore, we have demonstrated a feasible way for realizing an advanced nanoemitter array with both high brightness and ultrahigh resolution for future smart displays, high-resolution imaging, big-data optical information systems and so on.
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Affiliation(s)
- Mingzeng Peng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China.
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Zhao B, Lockrey MN, Caroff P, Wang N, Li L, Wong-Leung J, Tan HH, Jagadish C. The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods. NANOSCALE 2018; 10:11205-11210. [PMID: 29873654 DOI: 10.1039/c8nr00737c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the effect of nitridation on GaN self-assembled nanorods grown on the c-plane sapphire by metalorganic chemical vapour deposition (MOCVD). Nitridation conditions are found to critically influence the nanorod morphology and optical properties. The nanorod polarity was determined through a direct observation of atomic dumbbell pairs. While purely N-polar wires are obtained under optimised nitridation, incomplete or missing nitridation leads to mixed polarity. By comparing the morphology and the crystal structure with spatially resolved cathodoluminescence results, our study unambiguously establishes a link between appropriate nitridation duration and a homogeneous improvement in optical quality.
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Affiliation(s)
- B Zhao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia.
| | - M N Lockrey
- Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia
| | - P Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia.
| | - N Wang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia.
| | - L Li
- Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia
| | - J Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia.
| | - H H Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia.
| | - C Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, Australia.
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7
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Lewis RB, Corfdir P, Küpers H, Flissikowski T, Brandt O, Geelhaar L. Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core-Shell Heterostructures. NANO LETTERS 2018; 18:2343-2350. [PMID: 29570304 DOI: 10.1021/acs.nanolett.7b05221] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realize arrays of extremely and controllably bent nanowires comprising lattice-mismatched and highly asymmetric core-shell heterostructures. Strain sharing across the nanowire heterostructures is sufficient to bend vertical nanowires over backward to contact either neighboring nanowires or the substrate itself, presenting new possibilities for designing nanowire networks and interconnects. Photoluminescence spectroscopy on bent-nanowire heterostructures reveals that spatially varying strain fields induce charge carrier drift toward the tensile-strained outside of the nanowires, and that the polarization response of absorbed and emitted light is controlled by the bending direction. This unconventional strain field is employed for light emission by placing an active region of quantum dots at the outer side of a bent nanowire to exploit the carrier drift and tensile strain. These results demonstrate how bending in nanoheterostructures opens up new degrees of freedom for strain and device engineering.
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Affiliation(s)
- Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Pierre Corfdir
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Timur Flissikowski
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
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