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Masson L, Prévot G. Epitaxial growth and structural properties of silicene and other 2D allotropes of Si. NANOSCALE ADVANCES 2023; 5:1574-1599. [PMID: 36926561 PMCID: PMC10012843 DOI: 10.1039/d2na00808d] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Since the breakthrough of graphene, considerable efforts have been made to search for two-dimensional (2D) materials composed of other group 14 elements, in particular silicon and germanium, due to their valence electronic configuration similar to that of carbon and their widespread use in the semiconductor industry. Silicene, the silicon counterpart of graphene, has been particularly studied, both theoretically and experimentally. Theoretical studies were the first to predict a low-buckled honeycomb structure for free-standing silicene possessing most of the outstanding electronic properties of graphene. From an experimental point of view, as no layered structure analogous to graphite exists for silicon, the synthesis of silicene requires the development of alternative methods to exfoliation. Epitaxial growth of silicon on various substrates has been widely exploited in attempts to form 2D Si honeycomb structures. In this article, we provide a comprehensive state-of-the-art review focusing on the different epitaxial systems reported in the literature, some of which having generated controversy and long debates. In the search for the synthesis of 2D Si honeycomb structures, other 2D allotropes of Si have been discovered and will also be presented in this review. Finally, with a view to applications, we discuss the reactivity and air-stability of silicene as well as the strategy devised to decouple epitaxial silicene from the underlying surface and its transfer to a target substrate.
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Affiliation(s)
| | - Geoffroy Prévot
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP F-75005 Paris France
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Kawakami N, Arafune R, Minamitani E, Kawahara K, Takagi N, Lin CL. Anomalous dewetting growth of Si on Ag(111). NANOSCALE 2022; 14:14623-14629. [PMID: 36164927 DOI: 10.1039/d2nr03409c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials.
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Affiliation(s)
- Naoya Kawakami
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu 300, Taiwan.
| | - Ryuichi Arafune
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 304-0044, Japan
| | - Emi Minamitani
- Institute for Molecular Science, 38 Nishigo-Naka, Myodaiji, Okazaki 444-8585, Japan
| | - Kazuaki Kawahara
- Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - Noriaki Takagi
- Graduate School of Human and Environmental Studies, Kyoto University, Yoshida, Kyoto 606-8501, Japan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu 300, Taiwan.
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Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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Cui H, Guo Y, Ma W, Zhou Z. 2 D Materials for Electrochemical Energy Storage: Design, Preparation, and Application. CHEMSUSCHEM 2020; 13:1155-1171. [PMID: 31872570 DOI: 10.1002/cssc.201903095] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2019] [Revised: 12/20/2019] [Indexed: 05/21/2023]
Abstract
Electrochemical energy storage is a promising route to relieve the increasing energy and environment crises, owing to its high efficiency and environmentally friendly nature. However, it is still challenging to realize its widespread application because of unsatisfactory electrode materials, with either high cost or poor activity and new electrode materials are urgently needed. Two-dimensional (2 D) materials are possible candidates, owing to their unique geometry and physicochemical properties. This Review summarizes the latest advances in the development of 2 D materials for electrochemical energy storage. Computational investigation and design of 2 D materials are first introduced, and then preparation methods are presented in detail. Next, the application of such materials in supercapacitors, alkali metal-ion batteries, and metal-air batteries are summarized comprehensively. Finally, the challenges and perspectives are discussed to offer a guideline for future exploration of high-efficiency 2 D materials for electrochemical energy storage.
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Affiliation(s)
- Huijuan Cui
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (ReCast), Nankai University, Tianjin, 300350, P.R. China
| | - Yibo Guo
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (ReCast), Nankai University, Tianjin, 300350, P.R. China
| | - Wei Ma
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Zhen Zhou
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (ReCast), Nankai University, Tianjin, 300350, P.R. China
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, 450001, P.R. China
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Satta M, Lacovig P, Apostol N, Dalmiglio M, Orlando F, Bignardi L, Bana H, Travaglia E, Baraldi A, Lizzit S, Larciprete R. The adsorption of silicon on an iridium surface ruling out silicene growth. NANOSCALE 2018; 10:7085-7094. [PMID: 29616265 DOI: 10.1039/c8nr00648b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The adsorption of Si atoms on a metal surface might proceed through complex surface processes, whose rate is determined differently by factors such as temperature, Si coverage, and metal cohesive energy. Among other transition metals, iridium is a special case since the Ir(111) surface was reported first, in addition to Ag(111), as being suitable for the epitaxy of silicene monolayers. In this study we followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer, in a temperature range between 300 and 670 K. Density functional theory calculations were carried out in order to evaluate the stability of the different Si adsorption configurations as a function of the coverage. Results indicate that, at low coverage, the Si adatoms tend to occupy the hollow Ir sites, although a small fraction of them penetrates the first Ir layer. Si penetration of the Ir surface can take place if the energy gained upon Si adsorption is used to displace the Ir surface atoms, rather then being dissipated differently. At a Si coverage of ∼1 monolayer, the Ir 4f spectrum indicates that not only the metal surface but also the layers underneath are perturbed. Our results point out that the Si/Ir(111) interface is unstable towards Si-Ir intermixing, in agreement with the silicide phase formation reported in the literature for the reverted interface.
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Affiliation(s)
- Mauro Satta
- CNR-Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Department of Chemistry, Sapienza University, P.le Aldo Moro 5, 00185, Roma, Italy
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