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Hu H, Zhen W, Yue Z, Niu R, Xu F, Zhu W, Jiao K, Long M, Xi C, Zhu W, Zhang C. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices. NANOSCALE ADVANCES 2023; 5:6210-6215. [PMID: 37941949 PMCID: PMC10629003 DOI: 10.1039/d3na00525a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/05/2023] [Indexed: 11/10/2023]
Abstract
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.
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Affiliation(s)
- Huijie Hu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Science Island Branch of Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Weili Zhen
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Zhilai Yue
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Rui Niu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Feng Xu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wanli Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Keke Jiao
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
| | - Chuanying Xi
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wenka Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Changjin Zhang
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University Nanjing 210093 China
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2
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Saleem MI, Chandrasekar P, Batool A, Lee JH. Aqueous-Phase Formation of Two-Dimensional PbI 2 Nanoplates for High-Performance Self-Powered Photodetectors. MICROMACHINES 2023; 14:1949. [PMID: 37893386 PMCID: PMC10608996 DOI: 10.3390/mi14101949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 10/14/2023] [Accepted: 10/16/2023] [Indexed: 10/29/2023]
Abstract
The process of the aqueous synthesis of nanomaterials has gained considerable interest due to its ability to eliminate the need for complex organic solvents, which aligns with the principles of green chemistry. Fabricating nanostructures in aqueous solutions has gained recognition for its potential to develop ultrasensitive, low-energy, and ultrafast optoelectronic devices. This study focuses on synthesizing lead iodide (PbI2) nanoplates (NPs) using a water-based solution technique and fabricating a planar photodetector. The planar photodetectors (ITO/PbI2 NPs/Au) demonstrated a remarkable photosensitivity of 3.9 × 103 and photoresponsivity of 0.51 mA/W at a wavelength of 405 nm. Further, we have carried-out analytical calculations for key performance parameters including open-circuit voltage (Voc), short-circuit current (Isc), on-off ratio, responsivity (R), and specific detectivity (D*) at zero applied bias, while photodetector operating in self-powered mode. These values are as follows: Voc = 0.103 V, Isc = 1.93 × 10-8, on-off ratio = 103, R = 4.0 mA/W, and D* = 3.3 × 1011 Jones. Particularly, the asymmetrical output properties of ITO/PbI2 NPs/Au detector provided additional evidence of the effective creation of a Schottky contact. Therefore, the photodetector exhibited a photo-response even at 0 V bias (rise/decay time ~1 s), leading to the realization of self-powered photodetectors. Additionally, the device exhibited a rapid photo-response of 0.23/0.38 s (-5 V) in the visible range. This study expands the scope of aqueous-phase synthesis of PbI2 nanostructures, enabling the large-area fabrication of high-performance photodetectors.
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Affiliation(s)
- Muhammad Imran Saleem
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea;
| | | | - Attia Batool
- Research Center for Materials Science, Beijing Institute of Technology, Beijing 100081, China;
| | - Jeong-Hwan Lee
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea;
- 3D Convergence Center, Inha University, Incheon 22212, Republic of Korea
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3
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Nawaz MZ, Xu L, Zhou X, Javed M, Wang J, Wu B, Wang C. Synergistic Effect of Hybrid CdSe Nanobelt/PbI 2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36896978 DOI: 10.1021/acsami.2c22219] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Despite numerous studies on broadband photodetectors, the problematic query that remains unaddressed is the limited photoresponsivity while broadening the spectral regime. Here, for the first time, a rational design of a hybrid 1D CdSe nanobelt/2D PbI2 flake heterojunction device is constructed, which substantially boosts the photocurrent while significantly attenuating the dark current, resulting in improved photodetector figures-of-merit. Thanks to the excellent quality of the nanobelt/flake and built-in electric field at the CdSe/PbI2 interface heterojunction, photogenerated carriers are promptly segregated and more photoexcitons are accumulated by the respective electrodes, enabling a high responsivity of ∼106 A/W, making this one of the highest values among similar reported hybrid heterojunction photodetectors, together with a large linear dynamic range, superior sensitivity, excellent detectivity and external quantum efficiency, an ultrafast response, and a broadband spectral response range. The similar 1D/2D hybrid heterojunction device architecture assembled on the flexible polyimide tape substrate exhibits excellent folding endurance and mechanical, flexural, and long-term environmental stability. The present device architecture and robust operational stability in an ambient environment reveals that the combination of the present 1D/2D hybrid heterojunction has incredible potential for future flexible photoelectronic devices.
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Affiliation(s)
- Muhammad Zubair Nawaz
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Liu Xu
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Xin Zhou
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Muhammad Javed
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Jiale Wang
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Binhe Wu
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Chunrui Wang
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
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4
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Huo J, Zou G, Xiao Y, Sun T, Feng B, Shen D, Lin L, Wang W, A Z, Liu L. High performance 1D-2D CuO/MoS 2 photodetectors enhanced by femtosecond laser-induced contact engineering. MATERIALS HORIZONS 2023; 10:524-535. [PMID: 36426652 DOI: 10.1039/d2mh01088g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issues and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS2 2D-1D van der Waals heterostructure photodetector with an ultrahigh photoresponsivity which is 10-fold higher than its previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS2 wrapping and contamination removal. These h-BN protected devices show highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and bias voltages, the device can achieve a photoresponsivity as high as 2500 A W-1 in the forward bias mode, or achieve a high detectivity of 6.5 × 1011 Jones and a typical rise time of 2.5 ms at reverse bias. Moreover, h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrical depletion by gas molecules such as O2 and H2O during fs laser treatment or the operation process, thus greatly improving the stability and service life in harsh environments. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructure photodetectors by femtosecond laser contact engineering.
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Affiliation(s)
- Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- Taiyuan University of Technology, Taiyuan 030024, China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Luchan Lin
- Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zhanwen A
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
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5
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Wang G, Han B, Mak CH, Liu J, Liu B, Liu P, Hao X, Wang H, Ma S, Xu B, Hsu HY. Mixed-Dimensional van der Waals Heterostructure for High-Performance and Air-Stable Perovskite Nanowire Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55183-55191. [PMID: 36469437 DOI: 10.1021/acsami.2c15139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
An organic-inorganic hybrid perovskite nanowire (NW), CH3NH3PbI3, shows great potential for high-performance photodetectors due to its excellent photoresponse. However, the inefficient carrier collection between the one-dimensional (1D) NWs and metallic electrodes, as well as degradation of the perovskite, limits the viability of the CH3NH3PbI3 NWs for commercial production. Here, we demonstrate a photodetector with a mixed-dimensional van der Waals heterostructure of hexagonal boron nitride (hBN)/graphene (Gr)/1D CH3NH3PbI3, which exhibits excellent responsivity and specific detectivity of up to 558 A/W and 2.3 × 1012 Jones, owing to the improved carrier extraction at the electrical contact between Gr and the NW. As for the atomic encapsulation of hBN, the device is extremely robust and maintains its outstanding performance for more than 2 months when exposed to air. Moreover, benefitting from the 1D geometry of the CH3NH3PbI3 NW, our device is highly sensitive to polarized light. The mixed-dimensional van der Waals heterostructure, hBN/Gr/1D CH3NH3PbI3, would provide a novel idea and protocol for fabricating high-performance and air-stable photoelectronic devices based on organic-inorganic hybrid perovskite NWs.
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Affiliation(s)
- Guanghui Wang
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bin Han
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Chun Hong Mak
- School of Energy and Environment, Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong999077, Hong Kong, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen518057, China
| | - Jialong Liu
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bo Liu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Peng Liu
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an710072, Shaanxi, China
| | - Xiaodong Hao
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an710072, Shaanxi, China
| | - Shufang Ma
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bingshe Xu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Hsien-Yi Hsu
- School of Energy and Environment, Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong999077, Hong Kong, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen518057, China
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6
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Ghorpade UV, Suryawanshi MP, Green MA, Wu T, Hao X, Ryan KM. Emerging Chalcohalide Materials for Energy Applications. Chem Rev 2022; 123:327-378. [PMID: 36410039 PMCID: PMC9837823 DOI: 10.1021/acs.chemrev.2c00422] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
Abstract
Semiconductors with multiple anions currently provide a new materials platform from which improved functionality emerges, posing new challenges and opportunities in material science. This review has endeavored to emphasize the versatility of the emerging family of semiconductors consisting of mixed chalcogen and halogen anions, known as "chalcohalides". As they are multifunctional, these materials are of general interest to the wider research community, ranging from theoretical/computational scientists to experimental materials scientists. This review provides a comprehensive overview of the development of emerging Bi- and Sb-based as well as a new Cu, Sn, Pb, Ag, and hybrid organic-inorganic perovskite-based chalcohalides. We first highlight the high-throughput computational techniques to design and develop these chalcohalide materials. We then proceed to discuss their optoelectronic properties, band structures, stability, and structural chemistry employing theoretical and experimental underpinning toward high-performance devices. Next, we present an overview of recent advancements in the synthesis and their wide range of applications in energy conversion and storage devices. Finally, we conclude the review by outlining the impediments and important aspects in this field as well as offering perspectives on future research directions to further promote the development of chalcohalide materials in practical applications in the future.
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Affiliation(s)
- Uma V. Ghorpade
- Department
of Chemical Sciences and Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland,School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Mahesh P. Suryawanshi
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia,
| | - Martin A. Green
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Tom Wu
- School
of Materials Science and Engineering, University
of New South Wales, Sydney, New South Wales 2052, Australia
| | - Xiaojing Hao
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Kevin M. Ryan
- Department
of Chemical Sciences and Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland
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7
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Nawaz MZ, Xu L, Zhou X, Li J, Shah KH, Wang J, Wu B, Wang C. High-Performance and Broadband Flexible Photodetectors Employing Multicomponent Alloyed 1D CdS xSe 1-x Micro-Nanostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:19659-19671. [PMID: 35438480 DOI: 10.1021/acsami.2c01002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Low-cost multicomponent alloyed one-dimensional (1D) semiconductors exhibit broadband absorption from the ultraviolet to the near-infrared regime, which has attracted a great deal of interest in high-performance flexible optoelectronic devices. Here, we report the facile one-step fabrication of high-performance broadband rigid and flexible photodevices based on multicomponent alloyed 1D cadmium-sulfur-selenide (CdSxSe1-x) micro-nanostructures obtained via a vapor transport route. Photoresponse measurements have demonstrated their superior spectral photoresponsivity (5.8 × 104 A/W), several orders of magnitude higher than the pristine CdSe nanobelt photodevice, high specific detectivity (2 × 1015 Jones), photogain (1.2 × 105), external quantum efficiency (EQE, 1.4 × 107%), rapid response speed (13 ms), and excellent long-term environmental stability. The multicomponent alloyed CdSxSe1-x nanobelt photodevice demonstrated about three times higher photocurrent as well as can operate under multiple color illuminations (200-800 nm) and at a high applied bias of 10 V with the photoresponsivity and EQE being boosted to 4.34 × 105 A/W and 8.96 × 107%, respectively. Furthermore, multicomponent alloyed CdSxSe1-x nanobelt flexible photodevices show excellent mechanical and flexural photostabilities with identical photoresponse as rigid nanodevices. The improvement mechanism found in the present research can be exploited to lead to the design of high-performance flexible photodevices comprising other multicomponent nanomaterials.
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Affiliation(s)
- Muhammad Zubair Nawaz
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Liu Xu
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Xin Zhou
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Jiaping Li
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Khizar Hussain Shah
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Jiale Wang
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Binhe Wu
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Chunrui Wang
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
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8
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Huang PY, Qin JK, Zhu CY, Zhen L, Xu CY. 2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:493001. [PMID: 34479213 DOI: 10.1088/1361-648x/ac2388] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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9
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Yao J, Chen F, Li J, Du J, Wu D, Tian Y, Zhang C, Li X, Lin P. Mixed-dimensional Te/CdS van der Waals heterojunction for self-powered broadband photodetector. NANOTECHNOLOGY 2021; 32:415201. [PMID: 34214994 DOI: 10.1088/1361-6528/ac10e6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2021] [Accepted: 07/02/2021] [Indexed: 06/13/2023]
Abstract
The 2D layered crystals can physically integrate with other non-2D components through van der Waals (vdW) interaction, forming mixed-dimensional heterostructures. As a new elemental 2D material, tellurium (Te) has attracted intense recent interest for high room-temperature mobility, excellent air-stability, and the easiness of scalable synthesis. To date, the Te is still in its research infancy, and optoelectronics with low-power consumption are less reported. Motivated by this, we report the fabrication of a mixed-dimensional vdW photodiode using 2D Te and 1D CdS nanobelt in this study. The heterojunction exhibits excellent self-powered photosensing performance and a broad response spectrum up to short-wave infrared. Under 520 nm wavelength, a high responsivity of 98 mA W-1is obtained at zero bias with an external quantum efficiency of 23%. Accordingly, the photo-to-dark current ratio and specific detectivity reach 9.2 × 103and 1.9 × 1011Jones due to the suppressed dark current. This study demonstrates the promising applications of Te/CdS vdW heterostructure in high-performance photodetectors. Besides, such a mixed-dimensional integration strategy paves a new way for device design, thus expanding the research scope for 2D Te-based optoelectronics.
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Affiliation(s)
- Jinrong Yao
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Fangfang Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Juanjuan Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Junli Du
- State Grid Henan Electric Power Research Institute, Zhengzhou 450052, People's Republic of China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Yongtao Tian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Cheng Zhang
- National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, People's Republic of China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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10
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Peng G, Lu H, Liu Y, Fan D. The construction of a single-crystalline SbSI nanorod array-WO 3 heterostructure photoanode for high PEC performance. Chem Commun (Camb) 2021; 57:335-338. [PMID: 33313614 DOI: 10.1039/d0cc06148d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A novel kind of highly efficient photoanode was constructed with a SbSI/WO3 heterostructurefabricated through two hydrothermal reactions followed by an iodination reaction (WO3 → Sb2S3/WO3 → SbSI/WO3). After optimizing the solvent [carbon disulfide (CS2)] for SbI3, the SbSI(CS2)/WO3 photoanode shows high-density single-crystalline SbSI nanorods growing along the polar [001] direction on WO3 nanoplates, resulting in excellent photocurrent performance (∼2.1 mA cm-2@1.23 V vs. RHE) and an improved photostability. It is evidenced that the higher crystallinity of SbSI has a positive effect on the photostability of the constructed SbSI/WO3 photoanodes.
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Affiliation(s)
- Guoliang Peng
- College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 116023, China.
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11
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Xiao J, Zhang L, Zhou H, Shao Z, Liu J, Zhao Y, Li Y, Liu X, Xie H, Gao Y, Sun JT, Wee ATS, Huang H. Type-II Interface Band Alignment in the vdW PbI 2-MoSe 2 Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2020; 12:32099-32105. [PMID: 32603081 DOI: 10.1021/acsami.0c04985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2-MoSe2 heterostructures fabricated by in situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman and photoluminescence (PL) spectroscopy. PbI2 grows on MoSe2 in a quasi layer-by-layer epitaxial mode. A type-II interface band alignment is proposed between PbI2 and MoSe2 with the conduction band minimum (valence band maximum) located at PbI2 (MoSe2), which is confirmed by first-principles calculations and the existence of interfacial excitons revealed using temperature-dependent PL. Our findings provide a scalable method to fabricate PbI2-MoSe2 heterostructures and new insights into the electronic structures for future device design.
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Affiliation(s)
- Junting Xiao
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Lei Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Hui Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ziyi Shao
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Jinxin Liu
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Yuan Zhao
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Youzhen Li
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Xiaoliang Liu
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Haipeng Xie
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
| | - Yongli Gao
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
- Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Jia-Tao Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Han Huang
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, P. R. China
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12
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Saleem MI, Yang S, Zhi R, Li H, Sulaman M, Chandrasekar PV, Zhang Z, Batool A, Zou B. Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors. NANOTECHNOLOGY 2020; 31:254001. [PMID: 32150737 DOI: 10.1088/1361-6528/ab7de7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-systems and the ultrafast carrier transfer of micro-systems, have a promising role in high-performance photodetectors. In this paper, a highly-sensitive trilayer self-powered perovskite-based photodetector ITO/ZnO (70 nm)/CdS (150 nm)/CsPbBr3 (200 nm)/Au, in which the CdS nanorods (NRs) layer is sandwiched between a ZnO/CsPbBr3 interface to reduce the interfacial charge carriers' recombination and the charge transport resistance, is presented. Due to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current ratio of 106 with a responsivity of 86 mA W-1 and a specific detectivity of 6.2 × 1011 Jones was obtained at zero bias under 85 µW cm-2 405 nm illumination and its rise/decay time at zero bias is 0.3/0.25 s. Therefore, the enhanced device performance strongly suggests the great potential of such a trilayer heterojunction device for use in high-performance perovskite photodetectors.
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Affiliation(s)
- Muhammad Imran Saleem
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic systems, Center for Micro-Nanotechnology, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China. Key Lab of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, Beijing Institute of Technology, Beijing 100081, P. R. China
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