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Venkata Ramana TV, Battabyal M, Kumar S, Satapathy DK, Kumar R. Probing the thermoelectric properties of aluminium-doped copper iodide. Phys Chem Chem Phys 2024; 26:13287-13299. [PMID: 38639091 DOI: 10.1039/d4cp00593g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Copper iodide, an environmentally friendly material abundant in nature, holds great significance for room temperature thermoelectric (TE) applications owing to its high Seebeck coefficient and optical transparency. However, to fully unlock its thermoelectric potential and match the performance of conventional TE materials, there is a need to further enhance its electrical conductivity. In this study, we have successfully synthesized nano-crystalline powders of both undoped and aluminium-doped CuI at room temperature using the chemical precipitation method in an ethanol medium. The concentration of aluminium dopant has been optimized to maximize TE performance. At 400 K, the highest TE power factor and figure of merit achieved are 79 μW m-1 K-2 and 0.08, respectively, for CuI doped with 0.1 mol% Al. This enhancement in TE properties can be attributed to the increased carrier density resulting from aluminium doping. The impact of aluminium doping on the temperature-dependent thermal conductivity has been investigated, and the findings are explained by the decay mechanism of optical phonons, supported by the anharmonic phonon coupling theory. Our work delves into the evolution of structural, thermal, optical, and TE properties of CuI upon aluminium (Al) doping. The results provide valuable insights into the future application of CuI in transparent thermoelectric and optoelectronic fields.
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Affiliation(s)
- Tatavarthi Veera Venkata Ramana
- Laboratory for High Performance Ceramics, Department of Metallurgical and Materials Engineering, IIT Madras, Chennai-600036, India.
- Soft Materials Laboratory, Department of Physics, IIT Madras, Chennai-600036, India.
| | - Manjusha Battabyal
- International Advanced Research Center for Powder Metallurgy and New Materials (ARCI), Chennai-600036, India.
| | - Santosh Kumar
- Soft Materials Laboratory, Department of Physics, IIT Madras, Chennai-600036, India.
| | - Dillip K Satapathy
- Soft Materials Laboratory, Department of Physics, IIT Madras, Chennai-600036, India.
| | - Ravi Kumar
- Laboratory for High Performance Ceramics, Department of Metallurgical and Materials Engineering, IIT Madras, Chennai-600036, India.
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2
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Panama G, Lee SS. Thermoelectric Sensor with CuI Supported on Rough Glass. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:105. [PMID: 38202560 PMCID: PMC10780811 DOI: 10.3390/nano14010105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/26/2023] [Accepted: 12/30/2023] [Indexed: 01/12/2024]
Abstract
Thermoelectric generators convert heat into a potential difference with arrays of p- and n-type materials, a process that allows thermal energy harvesting and temperature detection. Thermoelectric sensors have attracted interest in relation to the creation of temperature and combustible gas sensors due to their simple operation principle and self-powering ability. CuI is an efficient p-type thermoelectric material that can be readily produced from a Cu layer by an iodination method. However, the vapor iodination of Cu has the disadvantage of weak adhesion on a bare glass substrate due to stress caused by crystal growth, limiting microfabrication applications of this process. This work presents a rough soda-lime glass substrate with nanoscale cavities to support the growth of a CuI layer, showing good adhesion and enhanced thermoelectric sensitivity. A rough glass sample with nanocavities is developed by reactive ion etching of a photoresist-coated glass sample in which aggregates of carbon residuals and the accumulation of NaF catalyze variable etching rates to produce local isotropic etching and roughening. A thermoelectric sensor consists of 41 CuI/In-CoSb3 thermoelectric leg pairs with gold electrodes for electrical interconnection. A thermoelectric leg has a width of 25 μm, a length of 3 mm, and a thickness of 1 μm. The thermoelectric response results in an open-circuit voltage of 13.7 mV/K on rough glass and 0.9 mV/K on bare glass under ambient conditions. Rough glass provides good mechanical interlocking and introduces important variations of the crystallinity and composition in the supported thermoelectric layers, leading to enhanced thermopower.
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Affiliation(s)
| | - Seung S. Lee
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea;
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3
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Won D, Bang J, Choi SH, Pyun KR, Jeong S, Lee Y, Ko SH. Transparent Electronics for Wearable Electronics Application. Chem Rev 2023; 123:9982-10078. [PMID: 37542724 PMCID: PMC10452793 DOI: 10.1021/acs.chemrev.3c00139] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Indexed: 08/07/2023]
Abstract
Recent advancements in wearable electronics offer seamless integration with the human body for extracting various biophysical and biochemical information for real-time health monitoring, clinical diagnostics, and augmented reality. Enormous efforts have been dedicated to imparting stretchability/flexibility and softness to electronic devices through materials science and structural modifications that enable stable and comfortable integration of these devices with the curvilinear and soft human body. However, the optical properties of these devices are still in the early stages of consideration. By incorporating transparency, visual information from interfacing biological systems can be preserved and utilized for comprehensive clinical diagnosis with image analysis techniques. Additionally, transparency provides optical imperceptibility, alleviating reluctance to wear the device on exposed skin. This review discusses the recent advancement of transparent wearable electronics in a comprehensive way that includes materials, processing, devices, and applications. Materials for transparent wearable electronics are discussed regarding their characteristics, synthesis, and engineering strategies for property enhancements. We also examine bridging techniques for stable integration with the soft human body. Building blocks for wearable electronic systems, including sensors, energy devices, actuators, and displays, are discussed with their mechanisms and performances. Lastly, we summarize the potential applications and conclude with the remaining challenges and prospects.
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Affiliation(s)
- Daeyeon Won
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Junhyuk Bang
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Seok Hwan Choi
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Kyung Rok Pyun
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Seongmin Jeong
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Youngseok Lee
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Seung Hwan Ko
- Applied
Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
- Institute
of Engineering Research/Institute of Advanced Machinery and Design
(SNU-IAMD), Seoul National University, Seoul 08826, South Korea
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4
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Li ZH, He JX, Lv XH, Chi LF, Egbo KO, Li MD, Tanaka T, Guo QX, Yu KM, Liu CP. Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films. Nat Commun 2022; 13:6346. [PMID: 36289237 PMCID: PMC9606309 DOI: 10.1038/s41467-022-34117-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Accepted: 10/13/2022] [Indexed: 11/09/2022] Open
Abstract
As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.
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Affiliation(s)
- Zhan Hua Li
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
| | - Jia Xing He
- grid.263451.70000 0000 9927 110XDepartment of Chemistry, Shantou University, 515063 Shantou, Guangdong China
| | - Xiao Hu Lv
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
| | - Ling Fei Chi
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China
| | - Kingsley O. Egbo
- grid.35030.350000 0004 1792 6846Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong ,grid.5336.30000 0004 0497 2560Paul-Drude-Institut fur Festkorperelektronik, Liebniz-Institut im Forschungsverbund Berlin e. V, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Ming-De Li
- grid.263451.70000 0000 9927 110XDepartment of Chemistry, Shantou University, 515063 Shantou, Guangdong China
| | - Tooru Tanaka
- grid.412339.e0000 0001 1172 4459Synchrotron Light Application Center, Saga University, Saga, 840-8502 Japan
| | - Qi Xin Guo
- grid.412339.e0000 0001 1172 4459Synchrotron Light Application Center, Saga University, Saga, 840-8502 Japan
| | - Kin Man Yu
- grid.35030.350000 0004 1792 6846Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong
| | - Chao Ping Liu
- grid.263451.70000 0000 9927 110XDepartment of Physics, College of Science, Shantou University, 515063 Shantou, Guangdong China ,grid.263451.70000 0000 9927 110XCenter of Semiconductor Materials and Devices, Shantou University, 515063 Shantou, Guangdong China
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Smith E, Venkataraman D. Deleterious Effects of Halides and Solvents used in Electronic Device Fabrication on the Integrity of Copper Iodide Thin‐Films. Chempluschem 2022; 87:e202200101. [DOI: 10.1002/cplu.202200101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 06/16/2022] [Indexed: 11/09/2022]
Affiliation(s)
- Emily Smith
- University of Massachusetts Amherst Chemistry UNITED STATES
| | - D. Venkataraman
- University of Massachusetts Amherst Chemistry 710 N. Pleasant St 01002 Amherst UNITED STATES
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Yokoyama S, Nozaki J, Umemoto Y, Motomiya K, Itoh T, Takahashi H. Flexible and adhesive sintered Cu nanomaterials on polyimide substrates prepared by combining Cu nanoparticles and nanowires with polyvinylpyrrolidone. Colloids Surf A Physicochem Eng Asp 2021. [DOI: 10.1016/j.colsurfa.2021.126907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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7
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Liu A, Zhu H, Kim M, Kim J, Noh Y. Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100546. [PMID: 34306982 PMCID: PMC8292905 DOI: 10.1002/advs.202100546] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 03/14/2021] [Indexed: 06/13/2023]
Abstract
Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Ao Liu
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangGyeongbuk37673Republic of Korea
| | - Huihui Zhu
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangGyeongbuk37673Republic of Korea
| | - Myung‐Gil Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwon16419Republic of Korea
| | - Junghwan Kim
- Materials Research Center for Element StrategyTokyo Institute of TechnologyMailbox SE‐6, 4259 Nagatsuta, Midori‐kuYokohama226‐8503Japan
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)PohangGyeongbuk37673Republic of Korea
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Lee JH, Shin G, Baek JY, Kang TJ. An Electricity-Generating Window Made of a Transparent Energy Harvester of Thermocells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:21157-21165. [PMID: 33793183 DOI: 10.1021/acsami.1c00164] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Windows are primarily for admitting light or air and allowing people to see out. Presented here are windows that can generate electricity while retaining the primary functions. These windows are made of transparent thermocells that convert a temperature difference across the window to electricity. Interconnected p-type and n-type or p-n thermocells are introduced and utilized to scale up the output power of a thermocell window (T-window). The T-window consisting of 2 p-n thermocells provides an output voltage of 60 mV and a power density of 0.5 μW/cm2 for a small temperature difference of 10 °C with an optical transparency of ∼50% in the visible range. The T-window introduced here could pave the way to enhancing energy efficiency in residential environments by capturing naturally available low-grade heat, a new renewable energy source that is otherwise discarded to the surrounding environment.
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Affiliation(s)
- Ju Hwan Lee
- Department of Mechanical Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Gilyong Shin
- Department of Mechanical Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Jae Yun Baek
- Department of Mechanical Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Tae June Kang
- Department of Mechanical Engineering, Inha University, Incheon 22212, Republic of Korea
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9
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Jaldurgam FF, Ahmad Z, Touati F. Low-Toxic, Earth-Abundant Nanostructured Materials for Thermoelectric Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:895. [PMID: 33807350 PMCID: PMC8065495 DOI: 10.3390/nano11040895] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Revised: 03/27/2021] [Accepted: 03/30/2021] [Indexed: 11/17/2022]
Abstract
This article presents recent research directions in the study of Earth-abundant, cost-effective, and low-toxic advanced nanostructured materials for thermoelectric generator (TEG) applications. This study's critical aspect is to systematically evaluate the development of high-performance nanostructured thermoelectric (TE) materials from sustainable sources, which are expected to have a meaningful and enduring impact in developing a cost-effective TE system. We review both the performance and limitation aspects of these materials at multiple temperatures from experimental and theoretical viewpoints. Recent developments in these materials towards enhancing the dimensionless figure of merit, Seebeck coefficient, reduction of the thermal conductivity, and improvement of electrical conductivity have also been discussed in detail. Finally, the future direction and the prospects of these nanostructured materials have been proposed.
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Affiliation(s)
- Farheen F. Jaldurgam
- Department of Electrical Engineering, College of Engineering, Qatar University, Doha 2713, Qatar; (F.F.J.); (F.T.)
- Qatar University Young Scientist Center (YSC), Qatar University, Doha 2713, Qatar
| | - Zubair Ahmad
- Qatar University Young Scientist Center (YSC), Qatar University, Doha 2713, Qatar
- Center for Advanced Materials (CAM), Qatar University, Doha 2713, Qatar
| | - Farid Touati
- Department of Electrical Engineering, College of Engineering, Qatar University, Doha 2713, Qatar; (F.F.J.); (F.T.)
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10
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Singh N, Taunk M. Effect of Surfactants on the Structural and Luminescence Properties of γ‐CuI Nanocrystals Synthesized by Facile Sonochemical Method. ChemistrySelect 2020. [DOI: 10.1002/slct.202002777] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Narinder Singh
- Department of Physics Indus International University Una HP 174507 India
- Department of Physics Govt. College Daulatpur Chowk Una HP 177204 India
| | - Manish Taunk
- Department of Physics Indus International University Una HP 174507 India
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Koskinen T, Juntunen T, Tittonen I. Large-Area Thermal Distribution Sensor Based on Multilayer Graphene Ink. SENSORS (BASEL, SWITZERLAND) 2020; 20:E5188. [PMID: 32932958 PMCID: PMC7570513 DOI: 10.3390/s20185188] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Revised: 08/31/2020] [Accepted: 09/08/2020] [Indexed: 06/11/2023]
Abstract
Emergent applications in wearable electronics require inexpensive sensors suited to scalable manufacturing. This work demonstrates a large-area thermal sensor based on distributed thermocouple architecture and ink-based multilayer graphene film. The proposed device combines the exceptional mechanical properties of multilayer graphene nanocomposite with the reliability and passive sensing performance enabled by thermoelectrics. The Seebeck coefficient of the spray-deposited films revealed an inverse thickness dependence with the largest value of 44.7 μV K-1 at 78 nm, which makes thinner films preferable for sensor applications. Device performance was demonstrated by touch sensing and thermal distribution mapping-based shape detection. Sensor output voltage in the latter application was on the order of 300 μV with a signal-to-noise ratio (SNR) of 35, thus enabling accurate detection of objects of different shapes and sizes. The results imply that films based on multilayer graphene ink are highly suitable to thermoelectric sensing applications, while the ink phase enables facile integration into existing fabrication processes.
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Affiliation(s)
- Tomi Koskinen
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland; (T.J.); (I.T.)
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