High thermal conductivity driven by the unusual phonon relaxation time platform in 2D monolayer boron arsenide

Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices.

Strain tuning of optical and thermoelectric properties of monolayer BAs

This study investigates the electronic, optical and thermoelectric properties of monolayer boron arsenide (BAs) using a fifth-nearest-neighbor tight-binding model based on density functional theory (DFT) calculations, with a particular focus on the effects of biaxial strain to tune its characteristics for optoelectronic and thermoelectric applications. The results show that monolayer BAs possesses a direct band gap of approximately 1.2 eV at the K-point, maintaining its semiconducting nature across a strain range of - 8% to + 8%. The band gap is observed to decrease under compressive strain and increase under tensile strain. Optical spectra exhibit two distinct peaks in the infrared and ultraviolet regions, corresponding to transitions between the valence and conduction bands at the K and M points, which are significantly modulated by strain. Specifically, compressive strain induces a red-shift in these optical peaks, while tensile strain causes a blue-shift. The strain-dependent electronic modifications also significantly influence the thermoelectric properties of BAs, leading to enhancing under compressive strain and decreasing with tensile strain.

Theoretical insights into Z-scheme BAs/GeC van der Waals heterostructure for high-efficiency solar cell

The urgent need for solar electricity production is critical for ensuring energy security and mitigating climate change. Achieving the optimal optical bandgap and effective carrier separation, essential for high-efficiency solar cells, remains a significant challenge when utilizing a single material. In this study, we design a BAs/GeC heterostructure using density functional theory. Our findings indicate that the BAs/GeC heterostructure exhibits direct bandgap semiconductor characteristics. Notably, the BAs/GeC heterostructure demonstrates excellent optical absorption within the infrared and visible light spectrum. Moreover, significant carrier spatial separation was suggested, facilitated by a Z-scheme pathway. Furthermore, applying biaxial strains revealed that the BAs/GeC heterostructure is unstable under compressive strain. However, the electronic and optical properties can be tuned using tensile biaxial strains. The calculated power conversion efficiency (PCE) of the BAs/GeC heterostructure is approximately 31%, as determined by the Scharber method. Hence, the combination of an appropriate bandgap, substantial carrier separation, and superior photoelectric conversion efficiency positions the BAs/GeC heterostructure as a promising candidate for high-efficiency solar cells.

Advancing high thermal conductivity: novel theories, innovative materials, and applications in thermal management technologies

Effective thermal management is crucial for the performance and stability of modern electronics, emphasizing the demand for high thermal conductivity (κ). This review summarizes the latest development in highκ, discussing the emerging theories, innovative materials and practical applications for interfacial heat dissipation. Unique phononic thermal transport behaviors are discussed, including four phonon-phonon scattering, hydrodynamic phonons, surface phonon-polaritons, and more. The review also highlights innovative materials with highκ, such as two-dimensional pentagonal structures, boron carbon nitrogen structures, hexagonal boron arsenide andθ-phase tantalum nitride. In addition, the potential of polymer composites reinforced with highκfillers and surface engineering for advanced electronic applications are also discussed. By integrating these theoretical approaches and material innovations, this review offers comprehensive strategies for enhancing thermal management in modern electronic devices.

Interaction of the III-As monolayer with SARS-CoV-2 biomarkers: implications for biosensor development

The emergence of SARS-CoV-2 in 2019 led to the global COVID-19 pandemic, highlighting the urgency for developing cost-effective and non-invasive methods to detect diseases at an early stage. Human breath, rich in volatile organic compounds (VOCs), is promising for cost-effective and rapid disease detection, with specific VOCs like methanol, ethanal, butanone, acetone, and ethyl butyrate linked to COVID-19. Recent advances in biomarker detection and gas sensing with 2D materials, particularly III-As monolayers like BAs, GaAs, and AlAs, offer high sensitivity at low concentrations, providing a novel avenue for exploring their potential in detecting COVID-19 biomarkers. This article aims to examine the effects of adsorption on different properties of III-Arsenide (BAs, GaAs and AlAs) monolayers, particularly in connection with SARS-CoV-2 biomarkers. In order to examine the interaction between the monolayers and biomarkers, first-principles computations within the framework of density functional theory (DFT) are utilized. The present study involves an investigation of the modifications in the band structure, density of states (DOS), work function, electron density difference, and optical properties (reflectance and absorbance) of III-As monolayers, with the aim of assessing their viability for the detection of SARS-CoV-2 biomarkers along with interfering gases such as CO2 and H2O. It is observed that VOCs induce a notable change in the work function of GaAs which serves as an indicator of the presence of these biomarkers. However, the changes in work function are not as substantial as those for AlAs and BAs. Additionally, the chemiresistive sensitivity, optical sensitivity and recovery time of III-As are investigated. The findings suggest that the pristine GaAs monolayer displays a significant level of sensitivity and selectivity towards the SARS-CoV-2 biomarkers, rendering it a material with potential for utilization in sensing applications. Furthermore, it has been observed that the recovery time of the GaAs monolayer subsequent to its exposure to the VOC biomarkers lies within an acceptable threshold. Upon exposure to UV light, the recovery time is further reduced. The outcomes of our study indicate that GaAs monolayers exhibit considerable potential as chemiresistive, work function-based and optical sensors for the precise and discerning identification of VOCs linked to the SARS-CoV-2 virus compared to the other two III-As monolayers.

Investigation of effects of interlayer interaction and biaxial strain on the phonon dispersion and dielectric response of hexagonal boron arsenide

In this study, the effects of interlayer interaction and biaxial strain on the electronic structure, phonon dispersion and optical properties of monolayer and bilayer BAs are studied, using first-principles calculations within the framework of density functional theory. The interlayer coupling in bilayer BAs causes the splitting of out-of-plane acoustic (ZA) and optical (ZO) mode. For both structures, positive phonon modes across the Brillouin zone have been observed under biaxial tensile strain from 0 to 8%, which indicate their dynamical stability under tensile strain. Also, the phonon band gap between longitudinal acoustic (LA) and longitudinal optical (LO)/transverse optical (TO) modes for monolayer and bilayer BAs decreases under tensile strain. An appreciable degree of optical anisotropy is noticeable in the materials for parallel and perpendicular polarizations, accompanied by significant absorption in the ultraviolet and visible regions. The absorption edge of bilayer BAs is at a lower energy with respect to the monolayer BAs. The results demonstrate that the phonon dispersion and optoelectronic properties of BAs sheet could as well be tuned with both interlayer interaction and biaxial strain that are promising for optoelectronic and thermoelectric applications.

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.

Activated Lone-Pair Electrons Lead to Low Lattice Thermal Conductivity: A Case Study of Boron Arsenide

Reducing thermal conductivity (κ) is of great significance to lots of applications, such as thermal insulation, thermoelectrics, etc. In this study, we propose an effective approach for realizing low κ by introducing lone-pair electrons or making the lone-pair electrons stereochemically active through bond nanodesigning. By cutting at the (111) cross section of the three-dimensional cubic boron arsenide (c-BAs), the κ is lowered by more than 1 order of magnitude in the resultant two-dimensional graphene-like BAs (g-BAs). The underlying mechanism of activating lone-pair electrons is analyzed based on the comparative study on the thermal transport properties and electronic structures of g-BAs, c-BAs, graphene, and diamond (c-BAs → g-BAs vs diamond → graphene). The proposed approach for realizing low κ and the underlying mechanism uncovered in this study would largely benefit the design of advanced thermal functional materials, especially in future research involving novel materials for energy applications.

Potential thermoelectric materials: first-principles prediction of low lattice thermal conductivity of two-dimensional (2D) orthogonal ScX2 (X = C and N) compounds

Thermoelectric materials with excellent performance can efficiently and directly convert waste heat into electrical energy. In today's era, finding thermoelectric materials with excellent performance and adjusting the thermoelectric parameters are essential for the sustainable development of energy in the context of the energy crisis and global warming. Through first-principles calculations, we notice that two-dimensional (2D) orthogonal ScX₂ (X = C and N) compounds show great potential in the field of thermoelectricity. Different from most materials containing C or N atoms, which are generally accompanied by high lattice thermal conductivity (TC), the 2D o-ScX₂ exhibited a rather low and anisotropic lattice TC. The κ3L (the lattice thermal conductivity including the effect of three-phonon scattering and isotope scattering) of o-ScC₂ along the X and Y directions are 2.79 W m^-1 K^-1 and 1.55 W m^-1 K^-1, and those of o-ScN₂ are 1.57 W m^-1 K^-1 and 0.56 W m^-1 K^-1. By calculating the fourth-order interatomic force constants (IFCs), we obtain the κ3+4L with the additional four-phonon scattering effect. Our results clearly show that four-phonon scattering plays an important role in the TC of the two materials, the κ3+4L of o-ScC₂ is only half of its κ3L. Furthermore, it can be noticed that the low lattice TCs of o-ScX₂ (X = C and N) are the result of many factors, e.g., heavy atom doping, the strong anharmonicity caused by the vibration of Sc atoms in the out-of-plane direction and C(N) atoms in the in-plane direction, important four-phonon scattering and strongly polarized covalent bonds between X atoms and Sc atoms. Moreover, it is interesting to find that the thermal transport properties of o-ScX₂ are led by a different phonon mechanism, e.g., the different TCs of o-ScC₂ and o-ScN₂ are determined by the anharmonic characteristic, and the harmonic characteristic plays a more important role in the anisotropy of o-ScX₂ (X = C and N). In general, our research can be expected to provide important guidance for the application of o-ScX₂ (X = C and N) in the thermoelectric field.

2D III-Nitride Materials: Properties, Growth, and Applications

2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.