Hidden spontaneous polarisation in the chalcohalide photovoltaic absorber Sn2SbS2I3

Lead-Free Semiconductors: Phase-Evolution and Superior Stability of Multinary Tin Chalcohalides

Tin-based semiconductors are highly desirable materials for energy applications due to their low toxicity and biocompatibility relative to analogous lead-based semiconductors. In particular, tin-based chalcohalides possess optoelectronic properties that are ideal for photovoltaic and photocatalytic applications. In addition, they are believed to benefit from increased stability compared with halide perovskites. However, to fully realize their potential, it is first necessary to better understand and predict the synthesis and phase evolution of these complex materials. Here, we describe a versatile solution-phase method for the preparation of the multinary tin chalcohalide semiconductors Sn2SbS2I3, Sn2BiS2I3, Sn2BiSI5, and Sn2SI2. We demonstrate how certain thiocyanate precursors are selective toward the synthesis of chalcohalides, thus preventing the formation of binary and other lower order impurities rather than the preferred multinary compositions. Critically, we utilized 119Sn ssNMR spectroscopy to further assess the phase purity of these materials. Further, we validate that the tin chalcohalides exhibit excellent water stability under ambient conditions, as well as remarkable resistance to heat over time compared to halide perovskites. Together, this work enables the isolation of lead-free, stable, direct band gap chalcohalide compositions that will help engineer more stable and biocompatible semiconductors and devices.

Computational Prediction of an Antimony-Based n-Type Transparent Conducting Oxide: F-Doped Sb2O5

Transparent conducting oxides (TCOs) possess a unique combination of optical transparency and electrical conductivity, making them indispensable in optoelectronic applications. However, their heavy dependence on a small number of established materials limits the range of devices that they can support. The discovery and development of additional wide bandgap oxides that can be doped to exhibit metallic-like conductivity are therefore necessary. In this work, we use hybrid density functional theory to identify a binary Sb(V) system, Sb2O5, as a promising TCO with high conductivity and transparency when doped with fluorine. We conducted a full point defect analysis, finding F-doped Sb2O5 to exhibit degenerate n-type transparent conducting behavior. The inherently large electron affinity found in antimony oxides also widens their application in organic solar cells. Following our previous work on zinc antimonate, this work provides additional support for designing Sb(V)-based oxides as cost-effective TCOs for a broader range of applications.

Exploring Chalcohalide Perovskite-Inspired Materials (Sn2SbX2I3; X = S or Se) for Optoelectronic and Spintronic Applications

Chalcohalide perovskite-inspired materials have attracted attention as promising optoelectronic materials due to their small band gaps, high defect tolerance, nontoxicity, and stability. However, a detailed analysis of their electronic structure and excited-state properties is lacking. Here, using state-of-the-art density functional theory, an effective k·p model analysis, and many-body perturbation theory (within the framework of GW and BSE), we explore the band splitting and excitonic properties of Sn2SbX2I3 (X = S or Se). Our findings reveal that the Cmc21 phase exhibits Rashba and Dresselhaus effects, causing significant band splitting, especially near the conduction and valence band extremes, respectively. Moreover, we find that the exciton binding energy is larger than those of lead halide perovskites but smaller than those of chalcogenide perovskites. We also investigate polaron-facilitated charge carrier mobility, which is found to be similar to that of lead halide perovskites and greater than that of chalcogenide perovskites. These characteristics make these materials promising for applications in spintronics and optoelectronics.

Accelerated Multisolvent Prediction for Aqueous Stable Halide Perovskite Materials

Solvent treatment is critical to improving the stability of halide perovskite materials that suffer from notorious issues that inhibit their industrial deployment; however, the complicated perovskite virtual design space with different types of solvent modifiers is inaccessible to traditional trial-and-error methods. In this study, machine learning is employed to predict stable multiple solvent-modified perovskite films under hostile conditions, and a complicated quinary solvent system "DMSO + DMF + toluene + NMP + GBL" is effectively identified to significantly improve the optoelectronic stability of CH3NH3PbI3 in water. The "combinatorial solvent design" approach is realized by an extra tree machine learning model, which leads to a prediction dataset containing aqueous stability labels of 6720 new quinary solvent/perovskite systems. Importantly, the accuracy of the machine learning model is verified via photoelectrochemical experiments, achieving an experimental accuracy of 80%. A machine learning-predicted quinary solvent system offers significantly enhanced aqueous stability and 1000 times larger aqueous photocurrents, compared with the control CH3NH3PbI3 film under the same hostile conditions. This study demonstrates the efficacy of machine learning for solvent design toward stable halide perovskite materials under hostile conditions.

Heavy pnictogen chalcohalides for efficient, stable, and environmentally friendly solar cell applications

Solar cell technology is an effective solution for addressing climate change and the energy crisis. Therefore, many researchers have investigated various solar cell absorbers that convert Sunlight into electric energy. Among the different materials researched, heavy pnictogen chalcohalides comprising heavy pnictogen cations, such as Bi³⁺and Sb³⁺, and chalcogen-halogen anions have recently been revisited as emerging solar absorbers because of their potential for efficient, stable, and low-toxicity solar cell applications. This review explores the recent progress in the applications of heavy pnictogen chalcohalides, including oxyhalides and mixed chalcohalides, in solar cells. We categorize them into material types based on their common structural characteristics and describe their up-to-date developments in solar cell applications. Finally, we discuss their material imitations, challenges for further development, and possible strategies for overcoming them.

Frenkel Excitons in Vacancy-Ordered Titanium Halide Perovskites (Cs2TiX6)

Low-cost, nontoxic, and earth-abundant photovoltaic materials are long-sought targets in the solar cell research community. Perovskite-inspired materials have emerged as promising candidates for this goal, with researchers employing materials design strategies including structural, dimensional, and compositional transformations to avoid the use of rare and toxic elemental constituents, while attempting to maintain high optoelectronic performance. These strategies have recently been invoked to propose Ti-based vacancy-ordered halide perovskites (A₂TiX₆; A = CH₃NH₃, Cs, Rb, or K; X = I, Br, or Cl) for photovoltaic operation, following the initial promise of Cs₂SnX₆ compounds. Theoretical investigations of these materials, however, consistently overestimate their band gaps, a fundamental property for photovoltaic applications. Here, we reveal strong excitonic effects as the origin of this discrepancy between theory and experiment, a consequence of both low structural dimensionality and band localization. These findings have vital implications for the optoelectronic application of these compounds while also highlighting the importance of frontier-orbital character for chemical substitution in materials design strategies.

Emerging Chalcohalide Materials for Energy Applications

Semiconductors with multiple anions currently provide a new materials platform from which improved functionality emerges, posing new challenges and opportunities in material science. This review has endeavored to emphasize the versatility of the emerging family of semiconductors consisting of mixed chalcogen and halogen anions, known as "chalcohalides". As they are multifunctional, these materials are of general interest to the wider research community, ranging from theoretical/computational scientists to experimental materials scientists. This review provides a comprehensive overview of the development of emerging Bi- and Sb-based as well as a new Cu, Sn, Pb, Ag, and hybrid organic-inorganic perovskite-based chalcohalides. We first highlight the high-throughput computational techniques to design and develop these chalcohalide materials. We then proceed to discuss their optoelectronic properties, band structures, stability, and structural chemistry employing theoretical and experimental underpinning toward high-performance devices. Next, we present an overview of recent advancements in the synthesis and their wide range of applications in energy conversion and storage devices. Finally, we conclude the review by outlining the impediments and important aspects in this field as well as offering perspectives on future research directions to further promote the development of chalcohalide materials in practical applications in the future.

Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

I-V-VI₂ ternary chalcogenides are gaining attention as earth-abundant, nontoxic, and air-stable absorbers for photovoltaic applications. However, the semiconductors explored thus far have slowly-rising absorption onsets, and their charge-carrier transport is not well understood yet. Herein, we investigate cation-disordered NaBiS₂ nanocrystals, which have a steep absorption onset, with absorption coefficients reaching >10⁵ cm^-1 just above its pseudo-direct bandgap of 1.4 eV. Surprisingly, we also observe an ultrafast (picosecond-time scale) photoconductivity decay and long-lived charge-carrier population persisting for over one microsecond in NaBiS₂ nanocrystals. These unusual features arise because of the localised, non-bonding S p character of the upper valence band, which leads to a high density of electronic states at the band edges, ultrafast localisation of spatially-separated electrons and holes, as well as the slow decay of trapped holes. This work reveals the critical role of cation disorder in these systems on both absorption characteristics and charge-carrier kinetics.

Lone pair driven anisotropy in antimony chalcogenide semiconductors

Antimony sulfide (Sb2S3) and selenide (Sb2Se3) have emerged as promising earth-abundant alternatives among thin-film photovoltaic compounds. A distinguishing feature of these materials is their anisotropic crystal structures, which are composed of quasi-one-dimensional (1D) [Sb4X6]n ribbons. The interaction between ribbons has been reported to be van der Waals (vdW) in nature and Sb2X3 are thus commonly classified in the literature as 1D semiconductors. However, based on first-principles calculations, here we show that inter-ribbon interactions are present in Sb2X3 beyond the vdW regime. The origin of the anisotropic structures is related to the stereochemical activity of the Sb 5s lone pair according to electronic structure analysis. The impacts of structural anisotropy on the electronic, dielectric and optical properties relevant to solar cells are further examined, including the presence of higher dimensional Fermi surfaces for charge carrier transport. Our study provides guidelines for optimising the performance of Sb2X3-based photovoltaics via device structuring based on the underlying crystal anisotropy.

Impact of metastable defect structures on carrier recombination in solar cells

The efficiency of a solar cell is often limited by electron–hole recombination mediated by defect states within the band gap of the photovoltaic (PV) semiconductor. The Shockley–Read–Hall (SRH) model considers a static trap that can successively capture electrons and holes. In reality however, true trap levels vary with both the defect charge state and local structure. Here we consider the role of metastable structural configurations in capturing electrons and holes, taking the tellurium interstitial in CdTe as an illustrative example. Consideration of the defect dynamics, and symmetry-breaking, changes the qualitative behaviour and activates new pathways for carrier capture. Our results reveal the potential importance of metastable defect structures in non-radiative recombination, in particular for semiconductors with anharmonic/ionic–covalent bonding, multinary compositions, low crystal symmetries or highly-mobile defects.

Metastable defect structures can activate novel pathways for electron–hole recombination in semiconductors – particularly for inorganic compounds with anharmonic/mixed bonding, multinary composition, low symmetry and/or highly-mobile defects.

Metal Halide Semiconductors beyond Lead-Based Perovskites for Promising Optoelectronic Applications

In recent decades, metal halide semiconductors represented by lead-based halide perovskites have shown broad potential in optoelectronic applications. This family of semiconductors differs from traditional tetrahedral semiconductors in crystalline structure, chemical bonding, electronic-structure features, optoelectronic properties, as well as material fabrication method. At present, difficulties arising from both intrinsic material properties (including Pb toxicity and long-term stability) and technological aspects hinder their large-scale commercialization. In this Perspective, we focus on up-and-coming lead-free metal halide semiconductors toward high-performance optoelectronic applications. We start by outlining the advantages of metal halide semiconductors and their physical and chemical underpinnings. We then review composition and structure, electronic structure, optoelectronic properties, and device applications according to classification into three material categories, i.e., three-dimensional halide perovskites, low-dimensional perovskites and perovskite-like materials, and materials beyond perovskites. We conclude with an outlook on the challenges and opportunities of metal halide semiconductors and the future development of the field.

Ferroelectric and Room-Temperature Ferromagnetic Semiconductors in the 2D MIMIIGe2X6 Family: First-Principles and Machine Learning Investigations

Inspired by experimentally discovering ferromagnetism and ferroelectricity in two-dimensional (2D) CrGeTe₃ and CuInP₂S₆ with similar geometric structures, respectively, we systematically investigated ferroic properties in a large family of 2D M_IM_IIGe₂X₆ (M_I and M_II = metal elements, X = S/Se/Te) by combining high-throughput first-principles calculations and the machine learning method. We identified 12 stable 2D multiferroics containing simultaneously ferromagnetic (FM) and ferroelectric (FE) properties and 35 2D ferromagnets without FE polarization. Particularly, the predicted FM Curie temperatures (T_C) of eight 2D FM+FE semiconductors are close to or above room temperature. The ferroelectricity originates from the spontaneous geometric symmetry breaking induced by the unexpected shift of Ge-Ge atomic pairs and the emergence of Ge lone pair electrons, which also strengthens the p-d orbital hybridization between X atoms and metal atoms, leading to enhanced super-super-exchange interactions and raising the FM T_C. Our findings not only enrich the family of 2D ferroic materials and present room-temperature FM semiconductors but also disclose the mechanism of the emerging ferroelectricity and enhanced ferromagnetism, which sheds light on the realization of high temperature multiferroics as well as FM semiconductors.