Ultra-clean high-mobility graphene on technologically relevant substrates

Multi-project wafer runs for electronic graphene devices in the European 2D-Experimental Pilot Line project

The commercialization of electronic devices based on graphene has not yet been successful, even 20 years after its first isolation. To this end, the European Commission is supporting research toward establishing a European experimental pilot line for electronic and optoelectronic devices based on graphene and related two-dimensional (2D) materials, namely the Experimental Pilot Line (2D-EPL) project. Here, we report the results obtained during the first and third multi-project wafer (MPW) runs completed at the end of 2022 (MPW run 1) and 2023 (MPW run 3) as an outcome of the 2D-EPL. Test devices were measured across the wafers to assess the device quality and variability before delivering the fabricated dies to the customers. Raman spectroscopy confirmed minimal structural changes in the graphene caused by the fabrication process, while electrical measurements of two different device types verified the device specifications defined in the process design kit.

Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V-1 s-1 on SiO2/Si and 105 cm2 V-1 s-1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

Covalent Immobilization of Mediators on Photoelectrodes for NADH Regeneration

The reduced nicotinamide adenine dinucleotide (NADH) is a vital biomolecule involved in many biocatalytic processes, and the high cost makes it significant to regenerate NADH in vitro. The photoelectrochemical approach is a promising and environmentally friendly method for sustainable NADH regeneration. However, the free Rh-based mediator ([Cp*Rh (bpy)H2O]2+) in the electrolyte suffers from low efficiency due to the sluggish charge transfer controlled by the diffusion process. Herein, we report an efficient and facile covalent bonding of the Rh-based mediator with the Si-based photocathode for NADH regeneration. The bipyridine-containing covalent organic framework (BpyCOF) layer ensures the even distribution of mediators throughout the surface of the photoelectrode. The graphene interlayer provides a pathway for charge transport and prevents silicon from corrosion. Furthermore, during the synthesis of BpyCOF, it functions as a substrate to promote the growth of the oriented BpyCOF film. The imitated contact between the components of the photocathode favors the charge transfer to the surface to participate in a chemical reaction, thus improving the catalytic performance and the NADH regeneration efficiency, which is four times higher than the reported photocathode modified by the Rh-based mediator. This study offers a new strategy for the construction of photoelectrochemical solar energy conversion devices.

Optical Properties of Graphene Nanoplatelets on Amorphous Germanium Substrates

In this work, the integration of graphene nanoplatelets (GNPs) with amorphous germanium (Ge) substrates is explored. The optical properties were characterized using Variable-Angle Spectroscopic Ellipsometry (VASE). The findings of this study reveal a strong interaction between GNPs and amorphous germanium, indicated by a significant optical absorption. This interaction suggests a change in the electronic structure of the GNPs, implying that amorphous germanium could enhance their effectiveness in devices such as optical sensors, photodetectors, and solar cells. Herein, the use of amorphous germanium as a substrate for GNPs, which notably increases their refractive index and extinction coefficient, is introduced for the first time. By exploring this unique material combination, this study provides new insights into the interaction between GNPs and amorphous substrates, paving the way for the develop of high-performance, scalable optoelectronic devices with enhanced efficiency.

Highly Sensitive Hall Sensors Based on Chemical Vapor Deposition Graphene

In this work, we demonstrate highly sensitive and scalable Hall sensors fabricated by adopting arrays of monolayer single-crystal chemical vapor deposition (CVD) graphene. The devices are based on graphene Hall bars with a carrier mobility of >12000 cm2 V-1 s-1 and a low residual carrier density of ∼1 × 1011 cm-2, showing Hall sensitivity higher than 5000 V A-1 T-1, which is a value previously only achieved when using exfoliated graphene encapsulated with flakes of hexagonal boron nitride. We also implement a facile and scalable polymeric encapsulation, allowing the performance of graphene Hall bars to be stabilized when measured in an ambient environment. We demonstrate that this capping method can reduce the degradation of electrical transport properties when the graphene devices are kept in air over 10 weeks. State-of-the-art performance of the realized devices, based on scalable synthesis and encapsulation, contributes to the proliferation of graphene-based Hall sensors.

Graphene-Perovskite Fibre Photodetectors

The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, fibre PDs are prepared by combining rolled graphene layers and photoactive perovskites. Conductive fibres (~500 Ωcm-1) are made by rolling single-layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al2O3 and parylene C), another rolled SLG as a channel, and perovskite as photoactive component. The resulting gate-tunable PD has a response time~9ms, with an external responsivity~22kAW-1 at 488nm for a 1V bias. The external responsivity is two orders of magnitude higher, and the response time one order of magnitude faster, than state-of-the-art wearable fibre-based PDs. Under bending at 4mm radius, up to~80% photocurrent is maintained. Washability tests show~72% of initial photocurrent after 30 cycles, promising for wearable applications.

Ethanol Solvation of Polymer Residues in Graphene Solution-Gated Field Effect Transistors

The persistence of photoresist residues from microfabrication procedures causes significant obstacles in the technological advancement of graphene-based electronic devices. These residues induce undesired chemical doping effects, diminish carrier mobility, and deteriorate the signal-to-noise ratio, making them critical in certain contexts, including sensing and electrical recording applications. In graphene solution-gated field-effect transistors (gSGFETs), the presence of polymer contaminants makes it difficult to perform precise electrical measurements, introducing response variability and calibration challenges. Given the absence of viable short to midterm alternatives to polymer-intensive microfabrication techniques, a postpatterning treatment involving THF and ethanol solvents was evaluated, with ethanol being the most effective, environmentally sustainable, and safe method for residue removal. Employing a comprehensive analysis with XPS, AFM, and Raman spectroscopy, together with electrical characterization, we investigated the influence of residual polymers on graphene surface properties and transistor functionality. Ethanol treatment exhibited a pronounced enhancement in gSGFET performance, as evidenced by a shift in the charge neutrality point and reduced dispersion. This systematic cleaning methodology holds the potential to improve the reproducibility and precision in the manufacturing of graphene devices. Particularly, by using ethanol for residue removal, we align our methodology with the principles of green chemistry, minimizing environmental impact while advancing diverse graphene technology applications.

Recent advances in batch production of transfer-free graphene

Large-area transfer-free graphene films prepared via chemical vapor deposition have proved appealing for various applications, with exciting examples in electronics, photonics, and optoelectronics. To achieve their commercialisation, batch production is a prerequisite. Nevertheless, the prevailing scalable synthesis strategies that have been reported are still obstructed by production inefficiencies and non-uniformity. There has also been a lack of reviews in this realm. We present herein a comprehensive and timely summary of recent advances in the batch production of transfer-free graphene. Primary issues and promising approaches for improving the graphene growth rate are first addressed, followed by a discussion of the strategies to guarantee in-plane and batch uniformity for graphene grown on planar plates and wafer-scale substrates, with the design of the target equipment to meet productivity requirements. Finally, potential research directions are outlined, aiming to offer insights into guiding the scalable production of transfer-free graphene.

Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates

Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer

Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the next generation antenna systems and networks. Here, we propose a low-power consumption, small footprint building block for 6 G and 5 G new radio wireless transmission allowing broadband capacity (e.g., 10-100 Gb/s per link and beyond). We demonstrate a wireless datalink based on graphene, reaching setup limited sub-THz carrier frequency and multi-Gbit/s data rate. Our device consists of a graphene-based integrated optoelectronic mixer capable of mixing an optically generated reference oscillator approaching 100 GHz, with a baseband electrical signal. We report >96 GHz optoelectronic bandwidth and -44 dB upconversion efficiency with a footprint significantly smaller than those of state-of-the-art photonic transmitters (i.e., <0.1 mm2). These results are enabled by an integrated-photonic technology based on wafer-scale high-mobility graphene and pave the way towards the development of optoelectronics-based arrayed-antennas for millimeter-wave technology.

Critical Point Drying of Graphene Field-Effect Transistors Improves Their Electric Transport Characteristics

A critical point drying (CPD) technique is reported with supercritical CO2 as a cleaning step for graphene field-effect transistors (GFETs) microfabricated on oxidized Si wafers, which results in an increase of the field-effect mobility and a decrease of the impurity doping. It is shown that the polymeric residues remaining on graphene after the transfer process and device microfabrication are significantly reduced after the CPD treatment. Moreover, the CPD effectively removes ambient adsorbates such as water therewith reducing the undesirable p-type doping of the GFETs. It is proposed that CPD of electronic, optoelectronic, and photonic devices based on 2D materials as a promising technique to recover their intrinsic properties after the microfabrication in a cleanroom and after storage at ambient conditions.

Scalable High-Mobility Graphene/hBN Heterostructures

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available SiO2/Si and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition on copper. The structural, chemical, and electronic properties of the heterostructure were investigated by atomic force microscopy, Raman spectroscopy, and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding 10,000 cm2/Vs in ambient conditions, 30% higher than those directly measured on SiO2/Si. We prove the scalability of our approach by measuring more than 100 transfer length method devices over a centimeter scale, which present an average carrier mobility of 7500 ± 850 cm2/Vs. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.

Enhanced Mobility in Suspended Chemical Vapor-Deposited Graphene Field-Effect Devices in Ambient Conditions

High-field-effect mobility and the two-dimensional nature of graphene films make it an interesting material for developing sensing applications with high sensitivity and low power consumption. The chemical vapor deposition process allows for producing high-quality graphene films in a scalable manner. Considering the significant impact of the underlying substrate on the graphene device performance, methods to enhance the field-effect mobility are highly desired. This work demonstrates a simplified fabrication process to develop suspended, two-terminal chemical vapor deposition (CVD) graphene devices with enhanced field-effect mobility operating at room temperature. Enhanced hole field-effect mobility of up to ∼4.8 × 104 cm2/Vs and average hole mobility >1 × 104 cm2/Vs across all of the devices is demonstrated. A gradual increase in the width of the graphene device resulted in the increase of the full width at half-maximum (FWHM) of field-effect characteristics and a decrease in the field-effect mobility. Our work presents a simplified fabrication approach to realize high-mobility suspended CVD graphene devices, beneficial for developing CVD graphene-related applications.

Electron and ion spectroscopy of azobenzene in the valence and core shells

Azobenzene is a prototype and a building block of a class of molecules of extreme technological interest as molecular photo-switches. We present a joint experimental and theoretical study of its response to irradiation with light across the UV to x-ray spectrum. The study of valence and inner shell photo-ionization and excitation processes combined with measurement of valence photoelectron-photoion coincidence and mass spectra across the core thresholds provides a detailed insight into the site- and state-selected photo-induced processes. Photo-ionization and excitation measurements are interpreted via the multi-configurational restricted active space self-consistent field method corrected by second order perturbation theory. Using static modeling, we demonstrate that the carbon and nitrogen K edges of azobenzene are suitable candidates for exploring its photoinduced dynamics thanks to the transient signals appearing in background-free regions of the NEXAFS and XPS.

Miniaturized infrared spectrometer based on the tunable graphene plasmonic filter

Miniaturization of a conventional spectrometer is challenging because of the tradeoffs of size, cost, signal-to-noise ratio, and spectral resolution, etc. Here, a new type of miniaturized infrared spectrometer based on the integration of tunable graphene plasmonic filters and infrared detectors is proposed. The transmittance spectrum of a graphene plasmonic filter can be tuned by varying the Fermi energy of the graphene, allowing light incident on the graphene plasmonic filter to be dynamically modulated in a way that encodes its spectral information in the receiving infrared detector. The incident spectrum can then be reconstructed by using decoding algorithms such as ridge regression and neural networks. The factors that influence spectrometer performance are investigated in detail. It is found that the graphene carrier mobility and the signal-to-noise ratio are two key parameters in determining the resolution and precision of the spectrum reconstruction. The mechanism behind our observations can be well understood in the framework of the Wiener deconvolution theory. Moreover, a hybrid decoding (or recovery) algorithm that combines ridge regression and a neural network is proposed that demonstrates a better spectral recovery performance than either the ridge regression or a deep neural network alone, being able to achieve a sub-hundred nanometer spectral resolution across the 8∼14 µm wavelength range. The size of the proposed spectrometer is comparable to a microchip and has the potential to be integrated within portable devices for infrared spectral imaging applications.

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral methods. By applying a comprehensive analysis approach, distinct interactions at the graphene-sapphire interface and local variations caused by the substrate topography are revealed. Regions near the sapphire step edges show tiny wrinkles with a height of about 0.2 nm, framed by delaminated graphene as identified by the typical Dirac cone of free graphene. In contrast, adsorption of CVD SLG on the hydroxyl-terminated α-Al₂O₃ (0001) terraces results in a superstructure with a periodicity of (2.66 ± 0.03) nm. Weak hydrogen bonds formed between the hydroxylated sapphire surface and the π-electron system of SLG result in a clean interface. The charge injection induces a band gap in the adsorbed graphene layer of about (73 ± 3) meV at the Dirac point. The good agreement with the predictions of a theoretical analysis underlines the potential of this hybrid system for emerging electronic applications.

XPS chemical state mapping in opto- and microelectronics

The strength of XPS imaging lies in its ability to (i) locate small patterns on sample surface, and (ii) inform, with micrometric lateral resolution, about the chemical environment of the elements detected at the surface. In this context, strontium-based perovskites appear to be well-adapted for such photoemission experiments thanks to their tunability and variability. These functional oxides have great potential for emerging optoand microelectronic applications, especially for transparent conductive oxide. Patterned heterostructure SrTiO3/SrVO3 was grown by pulsed laser deposition using a shadow mask. This stack was then analysed by XPS mapping in serial acquisition mode. Ti2p and V2p core level imaging clearly highlights the SrTiO3 and SrVO3 domains. The XPS mapping of the Sr3d core level will be extensively discussed: strontium being a common element to both oxides with a very similar chemical environment. Despite a lower contrast in Sr3d images, the two materials are discernible thanks to the topography. In addtion, the use of Sr3d FWHM image is a real asset to evidence the two phases. Finally, data processing by principal component analysis allows us to extract significant spectral information on the strontium atoms.