Field-effect-transistor-based ion sensors: ultrasensitive mercury(II) detection via healing MoS2 defects

Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.

High Selectivity and Sensitivity in Chemiresistive Sensing of Co(II) Ions with Liquid-Phase Exfoliated Functionalized MoS2 : A Supramolecular Approach

Chemical sensing of water contamination by heavy metal ions is key as it represents a most severe environmental problem. Liquid-phase exfoliated two-dimensional (2D) transition metal dichalcogenides (TMDs) are suitable candidates for chemical sensing thanks to their high surface-to-volume ratio, sensitivity, unique electrical characteristics, and scalability. However, TMDs lack selectivity due to nonspecific analyte-nanosheet interactions. To overcome this drawback, defect engineering enables controlled functionalization of 2D TMDs. Here, ultrasensitive and selective sensors of cobalt(II) ions via the covalent functionalization of defect-rich MoS2 flakes with a specific receptor, 2,2':6',2″-terpyridine-4'-thiol is developed. A continuous network is assembled by healing of MoS2 sulfur vacancies in a tailored microfluidic approach, enabling high control over the assembly of thin and large hybrid films. The Co2+ cations complexation represents a powerful gauge for low concentrations of cationic species which can be best monitored in a chemiresisitive ion sensor, featuring a 1 pm limit of detection, sensing in a broad concentration range (1 pm - 1 µm) and sensitivity as high as 0.308 ± 0.010 lg([Co2+ ])-1 combined with a high selectivity towards Co2+ over K+ , Ca2+ , Mn2+ , Cu2+ , Cr3+ , and Fe3+ cations. This supramolecular approach based on highly specific recognition can be adapted for sensing other analytes through specific ad-hoc receptors.

Structure, stability, and electronic and optical properties of TMDC-coinage metal composites: vertical atomically thin self-assembly of Au clusters

Composites of metal clusters supported on transition metal dichalcogenides (TMDCs) often provide promising opportunities for applications in nanoelectronics, catalysis, sensing, etc. In the present investigation, a systematic attempt has been made to unveil the structure and stability of coinage M₆ clusters supported on TMDC (MoS₂ and WS₂) monolayers. The more prominent objective is to explore potential candidates that stabilize the two-dimensional (2D) M₆ clusters on their surface. Periodic energy decomposition analysis (pEDA) was carried out to probe the various interaction energy (IE) components that govern the stability of the M₆ clusters in the composites. Attention has also been devoted to unravelling the electronic and optical properties of these TMDCs/M₆ composites. Moreover, ab initio molecular dynamics (AIMD) simulations were performed to scrutinize the dynamic behaviour of Au cluster on WS₂ monolayer. The results reveal that the coinage M₆ clusters form energetically more stable composites on MoS₂ than WS₂ monolayer. It is worth mentioning that WS₂ promotes the stability of 2D M₆ clusters. Inclusion of dispersion correction marginally altered the geometries of the TMDCs/M₆ composites but its impact on the IE values was significant. AIMD simulation explicitly emphasizes that the WS₂ surface preferentially facilitates the vertical 2D self-assembling of Au atoms and, interestingly, the planarity is mostly retained during the course of simulations. The adsorption of coinage M₆ clusters substantially influences the electronic and optical properties of the TMDCs. HSE06 calculation confirms that the decrease in energy gap is more pronounced in MoS₂/M₆ composites. The outcomes of this study render fundamental insights into the various TMDCs/M₆ composites that would certainly be worthwhile probing for diverse practical applications.

Mechanically controllable conductance in carbon nanotube based nanowires

Carbon nanotubes (CNTs) are considered to be promising candidates for fabricating nanowires, due to their stable quasi-one-dimensional structure. Controlling the electronic transport properties is one of the most vital issues for molecular nanowires. Herein, using density functional theory combined with nonequilibrium Green's function method, we systematically investigate the current evolution of (4, 4) single-walled CNT based nanowires in squashing processes. When the CNTs are squashed by applying different pressure along the radial direction, a negative correlation can be found between the electrical conductance of the nanowire and the pressure. Besides, the response of the nano junction current to pressure is influenced by the squashing direction. Not only does the geometric structure show symmetry breaking in the specific squashing direction, which causes the CNT electrodes to change from conductors to semiconductors, but also obvious π stacking behavior can be witnessed in this squashing direction. More intriguingly, because the current of the nano junction can be completely cut off by squashing the CNTs, a significant switching behavior with the on/off ratio of up to 10³ is obtained at low bias voltages. The underlying mechanisms for these phenomena are revealed by the analysis of the band structures, transmission spectra, frontier molecular orbitals and transmission pathways. These electronic transport properties make CNT a promising candidate for realizing conductance controllable nano devices.

MoS2 Defect Healing for High-Performance Chemical Sensing of Polycyclic Aromatic Hydrocarbons

The increasing population and industrial development are responsible for environmental pollution. Among toxic chemicals, polycyclic aromatic hydrocarbons (PAHs) are highly carcinogenic contaminants resulting from the incomplete combustion of organic materials. Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), are ideal sensory scaffolds, combining high surface-to-volume ratio with physical and chemical properties that are strongly susceptible to environmental changes. TMDCs can be integrated in field-effect transistors (FETs), which can operate as high-performance chemical detectors of (non)covalent interaction with small molecules. Here, we have developed MoS₂-based FETs as platforms for PAHs sensing, relying on the affinity of the planar polyaromatic molecules for the basal plane of MoS₂ and the structural defects in its lattice. X-ray photoelectron spectroscopy analysis, photoluminescence measurements, and transfer characteristics showed a notable reduction in the defectiveness of MoS₂ and a p-type doping upon exposure to PAHs solutions, with a magnitude determined by the correlation between the ionization energies (E_I) of the PAH and that of MoS₂. Naphthalene, endowed with the higher E_I among the studied PAHs, exhibited the highest output. We observed a log-log correlation between MoS₂ doping and naphthalene concentration in water in a wide range (10^-9-10^-6 M), as well as a reversible response to the analyte. Naphthalene concentrations as low as 0.128 ppb were detected, being below the limits imposed by health regulations for drinking water. Furthermore, our MoS₂ devices can reversibly detect vapors of naphthalene with both an electrical and optical readout, confirming that our architecture could operate as a dual sensing platform.

A Photoelectrochemical Study of Hybrid Organic and Donor—Acceptor Dyes as Sensitizers for Dye-Sensitized Solar Cells

An investigation on the photoelectrochemical and sensitizing properties of two different hybrid organic dyes, anchored as sensitizers on mesoporous TiO2, in Grätzel solar cells, is presented. Firstly, we studied the absorption properties of the C106 sensitizer, a Ru polypyridine complex, and of the Y123, an organic push and pull dye. In this work, we characterized these two dyes, employing two different electrolytes, with similar experimental condition and device parameters. From the J–V curves and IPCE photo action spectra, we performed an inedited bifacial study based on the comparison of their photovoltaic performances, exploiting several backgrounds (black or white). Among the obtained results from this study, we found the best bifaciality factor of 93% for C106 and the best power conversion efficiency of 12.8% for Y123. These results represent, concerning these two dyes and to the best of our knowledge, some of the highest values in literature.

Low Power Consumption Gate-Tunable WSe2/SnSe2 Van Der Waals Tunnel Field-Effect Transistor

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted attention as promising next-generation electronic devices and sensors. In this study, we fabricated a novel nanoelectronic device based on a black-phosphorus-gated WSe2/SnSe2 van der Waals (vdW) tunnel field-effect transistor (TFET), where hexagonal boron nitride (h-BN) was used as the gate insulator. We performed morphological, electrical, and optoelectronic characterizations. The p-WSe2/n-SnSe2 heterostructure-based TFET exhibited p-type behavior with a good dependence on the gate voltage. The TFET device showed a trend toward negative differential resistance (NDR) originating from band-to-band tunneling, which can be tuned by applying a gate voltage. The optoelectronic performance of the TFET device was low, with a maximum photoresponsivity of 11 mA W−1, owing to the large device length. The results obtained herein promote the integration of black phosphorus into low-energy-consumption 2D vdW TFETs.