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Li W, Xu Z, Yan Y, Gao Q, Song Y, Wang T, Dun H, Yang M, Huang Q, Zhang X, Zhao Y, Hou G. 2D MXenes: Synthesis, Properties, and Applications in Silicon-Based Optoelectronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2410001. [PMID: 39822155 DOI: 10.1002/smll.202410001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2024] [Revised: 12/21/2024] [Indexed: 01/19/2025]
Abstract
MXenes, a rapidly emerging class of 2D transition metal carbides, nitrides, and carbonitrides, have attracted significant attention for their outstanding properties, including high electrical conductivity, tunable work function, and solution processability. These characteristics have made MXenes highly versatile and widely adopted in the next generation of optoelectronic devices, such as perovskite and organic solar cells. However, their integration into silicon-based optoelectronic devices remains relatively underexplored, despite silicon's dominance in the semiconductor industry. In this review, a timely summary of the recent progress in utilizing Ti-based MXenes, particularly Ti3C2Tx, in silicon-based optoelectronic devices is provided. The composition, synthesis methods, and key properties of MXenes that contribute to their potential for enhanced device performance are focused on. Furthermore, the latest advancements in MXene applications in silicon-based solar cells and photodetectors are discussed from fundamental and applied perspectives. Finally, the key challenges and future opportunities for the integration of MXenes in silicon-based optoelectronic devices are outlined.
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Affiliation(s)
- Wei Li
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Zhiyuan Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Yu Yan
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Qianfeng Gao
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Yaya Song
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Taiqiang Wang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Hongyu Dun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Mingyu Yang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Qian Huang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Xiaodan Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Ying Zhao
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
| | - Guofu Hou
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China
- State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China
- Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China
- Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350, China
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Shin JH, Jo SH, Rhyu H, Park C, Kang MH, Song W, Lee SS, Lim J, Myung S. High-performance H 2S gas sensor utilizing MXene/MoS 2 heterostructure synthesized via the Langmuir-Blodgett technique and chemical vapor deposition. RSC Adv 2024; 14:37781-37787. [PMID: 39600997 PMCID: PMC11589806 DOI: 10.1039/d4ra07555b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2024] [Accepted: 11/22/2024] [Indexed: 11/29/2024] Open
Abstract
In this study, we developed an H2S gas sensor based on a MXene/MoS2 heterostructure, using the Langmuir-Blodgett (LB) technique and chemical vapor deposition (CVD). Ti3C2T x MXene nanosheets were uniformly transferred onto SiO2/Si substrates via the LB technique, achieving near-complete coverage. Subsequently, flower-like MoS2 was grown on the MXene-coated substrate through CVD, with vertical growth observed on the MXene layers. Our hybrid sensors exhibited a significant enhancement in gas response, with the MXene/MoS2 heterostructure showing a response of 0.5 to H2S - approximately five times greater than that of pristine MXene. This improvement is attributed to the formation of a heterojunction, which increases electron mobility and reduces the depletion layer, enabling more efficient gas detection. Furthermore, the sensor demonstrated excellent selectivity for H2S over other gases, including H2, NO2, NH3, NO, and VOCs. The combination of the LB technique and CVD not only enhances gas sensor performance but also offers a promising strategy for synthesizing materials for various electrochemical applications.
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Affiliation(s)
- Jae Hyuk Shin
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Su Hun Jo
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Hyejin Rhyu
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Chanwon Park
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Myung Hyun Kang
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Wooseok Song
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Sun Sook Lee
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Jongsun Lim
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
| | - Sung Myung
- Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea
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Zeng Q, Xing C, Xu Z, Liu Q, Yang L, Yang H, Zhang Y, Peng Z. Fast Electrodeposition of MXene/PDA Composites for High‐Performance Bioelectronic Interfaces: An In Vitro Evaluation. ADVANCED FUNCTIONAL MATERIALS 2024; 34. [DOI: 10.1002/adfm.202312770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Indexed: 11/28/2024]
Abstract
AbstractBioelectrode is critical to many biomedical researches. However, traditional materials (typically noble metals) and manufacturing techniques limit the large‐scale production of bioelectrodes. Herein, a fast electrochemical approach is proposed to deposit versatile MXene/polydopamine (PDA) composites on a metalized substrate. PDA coating can improve the adhesion between MXene and the substrate, while MXene provides rough surfaces with unique micro/nanostructure and outstanding electrical/optical/thermal performance. The impedance of the as‐prepared bioelectrode at 1 kHz is down to 8.48 Ω cm2. The corresponding cathodic charge storage capacity (CSCc) and charge injection capacity (CIC) are up to ≈250 and 6.59 mC cm−2 respectively, much superior to that of bare Pt and other conventional material‐based electrodes. The MXene/PDA composites also demonstrate robust stability under continuous electrostimulation for 1 × 108 pulse cycles and 1000 CV cycles. Moreover, MXene/PDA composites show a high and rapid photothermal response. Photoelectrochemical activity is also observed with high photocurrent, ≈40 folds larger than that of bare Pt. The utility of this new electrode in ascorbic acid sensing is demonstrated. Excellent biocompatibility is verified via neuron adhesion test and viability assay.
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Affiliation(s)
- Qi Zeng
- State Key Laboratory of Radio Frequency Heterogeneous Integration School of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518061 China
| | - Chenyang Xing
- State Key Laboratory of Radio Frequency Heterogeneous Integration School of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518061 China
| | - Zhen Xu
- Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China
| | - Qing Liu
- Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China
| | - Liangtao Yang
- Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China
| | - Hui Yang
- Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China
| | - Yi Zhang
- Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China
| | - Zhengchun Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration School of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518061 China
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Wu B, Xie Z, Shi Q, Yang J, Park CB, Gong P, Li G. Two-dimensional MXene nanosheets on nano-scale fibrils in hierarchical porous structure to achieve ultra-high sensitivity. NANOSCALE 2024; 16:6961-6972. [PMID: 38362794 DOI: 10.1039/d3nr05139k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
The complex hybrid nanostructure combining a two-dimensional (2D) conductive material and a hierarchical nanoscale skeleton plays an important role to enhance its piezoresistive sensitivity. To construct such a novel hybrid nanostructure, a piezoresistive sensor was designed with the following strategy to take the full advantages of 2D MXene and nanoscale fibrils: ethylene oxide propylene oxide random copolymer (EOPO) was grafted to ethylene-vinyl alcohol (EVOH) molecular chains and was foamed by an environmentally-friendly supercritical CO2 (scCO2) foaming technology to fabricate abundant nanoscale EVOH fibrils surrounding micropores; MXene featured as a 2D structure of nanoscale size that strongly interacted with this hierarchical nanoscale skeleton, and MXene not only convolved on nanoscale fibrils to generate bumps but also MXene covered the end of broken fibrils to build spots, and furthermore, MXene adhered on the soft EOPO embedded EVOH fibrils to form wrinkles, in which these bumps, spots and wrinkles assembled by highly conductive 2D MXene offered sufficient contacts when the hierarchical nanoscale skeleton was compressed (these contacts would then destruct when the skeleton recovered). Such an elaborated hybrid nanostructural design exploits the full potential of 2D MXene and hence achieves an ultra-high sensitivity of 6895.0 kPa-1 for this fabricated MXene piezoresistive sensor.
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Affiliation(s)
- Bingjie Wu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China.
- Jiangsu JITRI Advanced Polymer Materials Research Institute, Tengfei Building, 88 Jiangmiao Road, Jiangbei New District, Nanjing, Jiangsu, 211800, People's Republic of China
| | - Zhenghui Xie
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China.
| | - Qiwu Shi
- College of Materials Science and Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China
| | - Junlong Yang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China.
| | - Chul B Park
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China.
- Microcellular Plastics Manufacturing Laboratory, Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario, Canada, M5S 3G8
| | - Pengjian Gong
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China.
| | - Guangxian Li
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, 24 Yihuan Road, Nanyiduan, Chengdu, Sichuan, 610065, People's Republic of China.
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Liu Y, Li G, Huan L, Cao S. Advancements in silicon carbide-based supercapacitors: materials, performance, and emerging applications. NANOSCALE 2024; 16:504-526. [PMID: 38108473 DOI: 10.1039/d3nr05050e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
Silicon carbide (SiC) nanomaterials have emerged as promising candidates for supercapacitor electrodes due to their unique properties, which encompass a broad electrochemical stability range, exceptional mechanical strength, and resistance to extreme conditions. This review offers a comprehensive overview of the latest advancements in SiC nanomaterials for supercapacitors. It encompasses diverse synthesis methods for SiC nanomaterials, including solid-state, gas-phase, and liquid-phase synthesis techniques, while also discussing the advantages and challenges associated with each method. Furthermore, this review places a particular emphasis on the electrochemical performance of SiC-based supercapacitors, highlighting the pivotal role of SiC nanostructures and porous architectures in enhancing specific capacitance and cycling stability. A deep dive into SiC-based composite materials, such as SiC/carbon composites and SiC/metal oxide hybrids, is also included, showcasing their potential to elevate energy density and cycling stability. Finally, the paper outlines prospective research directions aimed at surmounting existing challenges and fully harnessing SiC's potential in the development of next-generation supercapacitors.
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Affiliation(s)
- Yangwen Liu
- School of Materials Sciences and Technology, Guangdong University of Petrochemical Technology, Maoming, 525000, China
| | - Guanghuan Li
- School of Materials Sciences and Technology, Guangdong University of Petrochemical Technology, Maoming, 525000, China
| | - Li Huan
- Department of Library, Guangdong University of Petrochemical Technology, Maoming, 525000, China.
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China.
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