1
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Vićentijević M, Jakšić M, Suligoj T. Implantation site design for large area diamond quantum device fabrication. Sci Rep 2023; 13:13483. [PMID: 37596364 PMCID: PMC10439203 DOI: 10.1038/s41598-023-40785-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Accepted: 08/16/2023] [Indexed: 08/20/2023] Open
Abstract
With the number of qubits increasing with each new quantum processor design, it is to be expected that the area of the future quantum devices will become larger. As diamond is one of the promising materials for solid state quantum devices fabricated by ion implantation, we developed a single board diamond detector/preamplifier implantation system to serve as a testbed for implantation sites of different areas and geometry. We determined that for simple circular openings in a detector electrode, the uniformity of detection of the impinging ions increases as the area of the sites decreases. By altering the implantation site design and introducing lateral electric field, we were able to increase the area of the implantation site by an order of magnitude, without decreasing the detection uniformity. Successful detection of 140 keV copper ions that penetrate on average under 100 nm was demonstrated, over the 800 µm2 area implantation site (large enough to accommodate over 2 × 105 possible qubits), with 100% detection efficiency. The readout electronics of the implantation system were calibrated by a referent 241Am gamma source, achieving an equivalent noise charge value of 48 electrons, at room temperature, less than 1% of the energy of impinging ions.
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Affiliation(s)
- Milan Vićentijević
- Ruđer Bošković Institute, 10000, Zagreb, Croatia.
- Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, 10000, Zagreb, Croatia.
| | - Milko Jakšić
- Ruđer Bošković Institute, 10000, Zagreb, Croatia
| | - Tomislav Suligoj
- Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, 10000, Zagreb, Croatia
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2
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Titze M, Byeon H, Flores A, Henshaw J, Harris CT, Mounce AM, Bielejec ES. In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty. NANO LETTERS 2022; 22:3212-3218. [PMID: 35426685 DOI: 10.1021/acs.nanolett.1c04646] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury-Brown-Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.
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Affiliation(s)
- Michael Titze
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Heejun Byeon
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Anthony Flores
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - C Thomas Harris
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Andrew M Mounce
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Edward S Bielejec
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
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3
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Jakob AM, Robson SG, Schmitt V, Mourik V, Posselt M, Spemann D, Johnson BC, Firgau HR, Mayes E, McCallum JC, Morello A, Jamieson DN. Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper-Bound to 99.85% by Ion-Solid Interactions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2103235. [PMID: 34632636 DOI: 10.1002/adma.202103235] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Revised: 08/17/2021] [Indexed: 06/13/2023]
Abstract
Silicon chips containing arrays of single dopant atoms can be the material of choice for classical and quantum devices that exploit single donor spins. For example, group-V donors implanted in isotopically purified 28 Si crystals are attractive for large-scale quantum computers. Useful attributes include long nuclear and electron spin lifetimes of 31 P, hyperfine clock transitions in 209 Bi or electrically controllable 123 Sb nuclear spins. Promising architectures require the ability to fabricate arrays of individual near-surface dopant atoms with high yield. Here, an on-chip detector electrode system with 70 eV root-mean-square noise (≈20 electrons) is employed to demonstrate near-room-temperature implantation of single 14 keV 31 P+ ions. The physics model for the ion-solid interaction shows an unprecedented upper-bound single-ion-detection confidence of 99.85 ± 0.02% for near-surface implants. As a result, the practical controlled silicon doping yield is limited by materials engineering factors including surface gate oxides in which detected ions may stop. For a device with 6 nm gate oxide and 14 keV 31 P+ implants, a yield limit of 98.1% is demonstrated. Thinner gate oxides allow this limit to converge to the upper-bound. Deterministic single-ion implantation can therefore be a viable materials engineering strategy for scalable dopant architectures in silicon devices.
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Affiliation(s)
- Alexander M Jakob
- School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia
| | - Simon G Robson
- School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia
| | - Vivien Schmitt
- School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Vincent Mourik
- School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Matthias Posselt
- Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, 01328, Saxony, Germany
| | - Daniel Spemann
- School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia
- Leibniz Institute of Surface Engineering (IOM), Leipzig, 04318, Saxony, Germany
| | - Brett C Johnson
- School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia
| | - Hannes R Firgau
- School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Edwin Mayes
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne, VIC, 3001, Australia
| | - Jeffrey C McCallum
- School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia
| | - Andrea Morello
- School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - David N Jamieson
- School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia
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4
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Markevich A, Hudak BM, Madsen J, Song J, Snijders PC, Lupini AR, Susi T. Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:16041-16048. [PMID: 34354792 PMCID: PMC8327312 DOI: 10.1021/acs.jpcc.1c03549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 06/25/2021] [Indexed: 05/10/2023]
Abstract
The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first-principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.
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Affiliation(s)
- Alexander Markevich
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Bethany M. Hudak
- Naval
Research Laboratory, Material Sciences and Technology, 4555 Overlook Ave SW, Washington, District of Columbia 20375, United States
| | - Jacob Madsen
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Jiaming Song
- School
of Physics, Northwest University, 1 Xuefu Avenue, Xi’an, Shaanxi 710127, China
| | - Paul C. Snijders
- Materials
Science and Technology Division, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Andrew R. Lupini
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Toma Susi
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
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5
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de Leon NP, Itoh KM, Kim D, Mehta KK, Northup TE, Paik H, Palmer BS, Samarth N, Sangtawesin S, Steuerman DW. Materials challenges and opportunities for quantum computing hardware. Science 2021; 372:372/6539/eabb2823. [PMID: 33859004 DOI: 10.1126/science.abb2823] [Citation(s) in RCA: 55] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Quantum computing hardware technologies have advanced during the past two decades, with the goal of building systems that can solve problems that are intractable on classical computers. The ability to realize large-scale systems depends on major advances in materials science, materials engineering, and new fabrication techniques. We identify key materials challenges that currently limit progress in five quantum computing hardware platforms, propose how to tackle these problems, and discuss some new areas for exploration. Addressing these materials challenges will require scientists and engineers to work together to create new, interdisciplinary approaches beyond the current boundaries of the quantum computing field.
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Affiliation(s)
- Nathalie P de Leon
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan
| | - Dohun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Karan K Mehta
- Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8092 Zürich, Switzerland
| | - Tracy E Northup
- Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria
| | - Hanhee Paik
- IBM Quantum, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.
| | - B S Palmer
- Laboratory for Physical Sciences, University of Maryland, College Park, MD 20740, USA.,Quantum Materials Center, University of Maryland, College Park, MD 20742, USA
| | - N Samarth
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sorawis Sangtawesin
- School of Physics and Center of Excellence in Advanced Functional Materials, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
| | - D W Steuerman
- Kavli Foundation, 5715 Mesmer Avenue, Los Angeles, CA 90230, USA
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6
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Yang-Keathley Y, Maloney SA, Hastings JT. Real-time dose control for electron-beam lithography. NANOTECHNOLOGY 2021; 32:095302. [PMID: 33197908 DOI: 10.1088/1361-6528/abcaca] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Shot-to-shot, or pixel-to-pixel, dose variation during electron-beam lithography is a significant practical and fundamental problem. Dose variations associated with charging, electron source instability, optical system drift, and ultimately shot noise in the e-beam itself conspire to critical dimension variability, line width/edge roughness, and limited throughput. It would be an important improvement to e-beam based patterning technology if real-time feedback control of electron-dose were provided so that pattern quality and throughput would be improved beyond the shot noise limit. In this paper, we demonstrate control of e-beam dose based on the measurement of electron arrival at the sample where patterns are written, rather than from the source or another point in the electron optical column. Our results serve as the first steps towards real-time dose control and eventually overcoming the shot noise.
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Affiliation(s)
- Yugu Yang-Keathley
- Department of Electrical and Computer Engineering, Wentworth Institute of Technology, Boston, MA 02115, United States of America. Department of Electrical and Computer Engineering, University of Kentucky, Lexington, KY 40506, United States of America
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7
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Pavunny SP, Yeats AL, Banks HB, Bielejec E, Myers-Ward RL, DeJarld MT, Bracker AS, Gaskill DK, Carter SG. Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation. Sci Rep 2021; 11:3561. [PMID: 33574463 PMCID: PMC7878855 DOI: 10.1038/s41598-021-82832-x] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 12/28/2020] [Indexed: 11/24/2022] Open
Abstract
Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place these defects at the optimal location in a host material with nano-scale accuracy is desirable for integration of these quantum systems with traditional electronic and photonic structures. Here, we demonstrate the precise spatial patterning of arrays of silicon vacancy (\documentclass[12pt]{minimal}
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\begin{document}$${V}_{Si}$$\end{document}VSi) emitters in an epitaxial 4H-SiC (0001) layer through mask-less focused ion beam implantation of Li+. We characterize these arrays with high-resolution scanning confocal fluorescence microscopy on the Si-face, observing sharp emission lines primarily coming from the \documentclass[12pt]{minimal}
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\begin{document}$${V1}^{{\prime}}$$\end{document}V1′ zero-phonon line (ZPL). The implantation dose is varied over 3 orders of magnitude, leading to \documentclass[12pt]{minimal}
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\begin{document}$${V}_{Si}$$\end{document}VSi densities from a few per implantation spot to thousands per spot, with a linear dependence between ZPL emission and implantation dose. Optically-detected magnetic resonance (ODMR) is also performed, confirming the presence of V2 \documentclass[12pt]{minimal}
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\begin{document}$${V}_{Si}$$\end{document}VSi. Our investigation reveals scalable and reproducible defect generation.
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Affiliation(s)
- Shojan P Pavunny
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA.
| | - Andrew L Yeats
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - Hunter B Banks
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | | | - Rachael L Myers-Ward
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - Matthew T DeJarld
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - Allan S Bracker
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - D Kurt Gaskill
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA.,Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Samuel G Carter
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA.
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8
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Perczel J, Borregaard J, Chang DE, Yelin SF, Lukin MD. Topological Quantum Optics Using Atomlike Emitter Arrays Coupled to Photonic Crystals. PHYSICAL REVIEW LETTERS 2020; 124:083603. [PMID: 32167350 DOI: 10.1103/physrevlett.124.083603] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2019] [Accepted: 12/11/2019] [Indexed: 06/10/2023]
Abstract
We propose an experimentally feasible nanophotonic platform for exploring many-body physics in topological quantum optics. Our system is composed of a two-dimensional lattice of nonlinear quantum emitters with optical transitions embedded in a photonic crystal slab. The emitters interact through the guided modes of the photonic crystal, and a uniform magnetic field gives rise to large topological band gaps, robust edge states, and a nearly flat band with a nonzero Chern number. The presence of a topologically nontrivial nearly flat band paves the way for the realization of fractional quantum Hall states and fractional topological insulators in a topological quantum optical setting.
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Affiliation(s)
- J Perczel
- Physics Department, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Physics Department, Harvard University, Cambridge, Massachusetts 02138, USA
| | - J Borregaard
- Physics Department, Harvard University, Cambridge, Massachusetts 02138, USA
- QMATH, Department of Mathematical Sciences, University of Copenhagen, Copenhagen 2100, Denmark
| | - D E Chang
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, 08015 Barcelona, Spain
| | - S F Yelin
- Physics Department, Harvard University, Cambridge, Massachusetts 02138, USA
- Department of Physics, University of Connecticut, Storrs, Connecticut 06269, USA
| | - M D Lukin
- Physics Department, Harvard University, Cambridge, Massachusetts 02138, USA
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9
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Bradac C, Gao W, Forneris J, Trusheim ME, Aharonovich I. Quantum nanophotonics with group IV defects in diamond. Nat Commun 2019; 10:5625. [PMID: 31819050 PMCID: PMC6901484 DOI: 10.1038/s41467-019-13332-w] [Citation(s) in RCA: 80] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2019] [Accepted: 11/01/2019] [Indexed: 12/16/2022] Open
Abstract
Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.
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Affiliation(s)
- Carlo Bradac
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology, Sydney, NSW, 2007, Australia.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jacopo Forneris
- Istituto Nazionale di Fisica Nucleare (INFN) and Physics Department, Università degli Studi di Torino, Torino, 10125, Italy
| | - Matthew E Trusheim
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology, Sydney, NSW, 2007, Australia
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10
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Hiraya W, Mishima N, Shima T, Tai S, Tsuruoka T, Valov I, Hasegawa T. Resistivity control by the electrochemical removal of dopant atoms from a nanodot. Faraday Discuss 2019; 213:29-40. [PMID: 30357246 DOI: 10.1039/c8fd00099a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Doping impurity atoms into semiconductor materials changes the resistance of the material. Selecting the atomic species of a dopant and the precise control of the number of dopant atoms in a unit volume can control the resistance to a desired value. The number of dopant atoms is usually controlled when the materials are synthesized. It can also be controlled after synthesizing by injecting dopant atoms using an ion implantation technique. This physical method has now enabled atom by atom implantation at the desired position. Here, we propose an additional technique, based on the electrochemical potential of dopant atoms in a material. The technique enables the dynamic control of the number of dopant atoms through the application of bias to the material. We demonstrate the controlled removal of dopant atoms using Ag2+δS and Ag-doped Ta2O5 as model materials. The change in resistance accompanying the removal of dopant atoms is also observed.
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Affiliation(s)
- Wataru Hiraya
- Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan.
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11
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Gardner JR, McGehee WR, McClelland JJ. Characterization of a high-brightness, laser-cooled Li + ion source. JOURNAL OF APPLIED PHYSICS 2019; 125:10.1063/1.5085068. [PMID: 31097840 PMCID: PMC6513349 DOI: 10.1063/1.5085068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/08/2018] [Accepted: 01/31/2019] [Indexed: 06/09/2023]
Abstract
Ion sources based on laser cooling have recently provided new pathways to high-resolution microscopy, ion milling, and ion implantation. Here, we present the design and detailed characterization of a 7Li magneto-optical trap ion source (MOTIS) with a peak brightness of (1.2 ± 0.2) × 105 A m-2 sr-1 eV-1 and a maximum continuous current over 1 nA. These values significantly surpass previous Li MOTIS performance benchmarks. Using simple models, we discuss how the performance of this system relates to fundamental operating limits. This source will support a range of projects using lithium ion beams for surface microscopy and nanostructure characterization, including Li+ implantation for studies of ionic transport in energy storage materials.
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Affiliation(s)
- J R Gardner
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - W R McGehee
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - J J McClelland
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
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12
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Räcke P, Spemann D, Gerlach JW, Rauschenbach B, Meijer J. Detection of small bunches of ions using image charges. Sci Rep 2018; 8:9781. [PMID: 29955102 PMCID: PMC6023920 DOI: 10.1038/s41598-018-28167-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2018] [Accepted: 06/12/2018] [Indexed: 11/26/2022] Open
Abstract
A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system for deterministic implantation, is presented. It is based on recording the image charge signal of ions moving through a detector, comprising a set of cylindrical electrodes. This work describes theoretical and practical aspects of image charge detection (ICD) and detector design and its application in the context of real time ion detection. It is shown how false positive detections are excluded reliably, although the signal-to-noise ratio is far too low for time-domain analysis. This is achieved by applying a signal threshold detection scheme in the frequency domain, which - complemented by the development of specialised low-noise preamplifier electronics - will be the key to developing single ion image charge detection for deterministic implantation.
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Affiliation(s)
- Paul Räcke
- Universität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstr. 5, 04103, Leipzig, Germany.
- Leibniz Joint Lab "Single Ion Implantation", Permoserstr. 15, 04318, Leipzig, Germany.
| | - Daniel Spemann
- Leibniz Joint Lab "Single Ion Implantation", Permoserstr. 15, 04318, Leipzig, Germany
- Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, 04318, Leipzig, Germany
| | - Jürgen W Gerlach
- Leibniz Joint Lab "Single Ion Implantation", Permoserstr. 15, 04318, Leipzig, Germany
- Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, 04318, Leipzig, Germany
| | - Bernd Rauschenbach
- Universität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstr. 5, 04103, Leipzig, Germany
- Leibniz Joint Lab "Single Ion Implantation", Permoserstr. 15, 04318, Leipzig, Germany
- Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, 04318, Leipzig, Germany
| | - Jan Meijer
- Universität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstr. 5, 04103, Leipzig, Germany
- Leibniz Joint Lab "Single Ion Implantation", Permoserstr. 15, 04318, Leipzig, Germany
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