Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films

Insight into What Is inside Swift Heavy Ion Latent Tracks in PET Film

We present here a novel experimental study of changes after contact electrification in the optical transmission spectra of samples of both pristine and irradiated PET film treated with Kr+15 ions of energy of 1.75 MeV and a fluence of 3 × 1010 cm2. We used a non-standard electrification scheme for injecting electrons into the film by applying negative electrodes to both its surfaces and using the positively charged inner regions of the film itself as the positive electrode. Electrification led to a decrease in the intensity of the internal electric fields for both samples and a hypsochromic (blue) shift in their spectra. For the irradiated PET sample, electrification resulted in a Gaussian modulation of its optical properties in the photon energy range 2.3-3.6 eV. We associate this Gaussian modulation with the partial decay of non-covalent extended conjugated systems that were formed under the influence of the residual radial electric field of the SHI latent tracks. Our studies lead us to suggest the latent track in the PET film can be considered as a variband material in the radial direction. Consideration of our results along with other published experimental results leads us to conclude that these can all be consistently understood by taking into account both the swift and slow electrons produced by SHI irradiation, and that it appears that the core of a latent track is negatively charged, and the periphery is positively charged.

Increasing the Accuracy of the Characterization of a Thin Semiconductor or Dielectric Film on a Substrate from Only One Quasi-Normal Incidence UV/Vis/NIR Reflectance Spectrum of the Sample

OEMT is an existing optimizing envelope method for thin-film characterization that uses only one transmittance spectrum, T(λ), of the film deposited on the substrate. OEMT computes the optimized values of the average thickness, d¯, and the thickness non-uniformity, Δd, employing variables for the external smoothing of T(λ), the slit width correction, and the optimized wavelength intervals for the computation of d¯ and Δd, and taking into account both the finite size and absorption of the substrate. Our group had achieved record low relative errors, <0.1%, in d¯ of thin semiconductor films via OEMT, whereas the high accuracy of d¯ and Δd allow for the accurate computation of the complex refractive index, N˙(λ), of the film. In this paper is a proposed envelope method, named OEMR, for the characterization of thin dielectric or semiconductor films using only one quasi-normal incidence UV/Vis/NIR reflectance spectrum, R(λ), of the film on the substrate. The features of OEMR are similar to the described above features of OEMT. OEMR and several popular dispersion models are employed for the characterization of two a-Si films, only from R(λ), with computed d¯ = 674.3 nm and Δd = 11.5 nm for the thinner film. It is demonstrated that the most accurate characterizations of these films over the measured spectrum are based on OEMR.

Refractive Index-Adaptive Nanoporous Chiral Photonic Crystal Film for Chemical Detection Visualized via Selective Reflection

Photonic crystals (PC) are of great importance in technology, especially in optics and photonics. In general, the structural color of PCs responds to external stimuli primarily by changing their periodicity. Herein, the authors report on refractive index (RI) adaptive PCs. Cross-linked cholesteric films with interconnected nanopores exhibit a very low RI without light scattering. Transparent PC films with maximum reflectance in the ultravoilet (UV) region respond to various chemicals by changing the reflective color of the PC. The authors demonstrate its unique colorimetric chemical detections of hazardous organic liquids. Loading various chemicals into nanopores significantly shifts the structural color into the visible range depending on the chemical's RI. These results are unique in that the structural color of photonic films is mediated by RI changes rather than periodicity changes. In principle, nanoporous photonic crystal films can detect the RI of a chemical substance by its unique color. In contrast to volumetric changes, this sensing mechanism offers several advantages, including durability, excellent sensitivity, fast response time, and wide detection range. These results provide useful insight into stimulus-responsive PCs. The structural color of PC films can be effectively tuned by adjusting average RIs instead of changing periodicity.

Resulting Effect of the p-Type of ZnTe: Cu Thin Films of the Intermediate Layer in Heterojunction Solar Cells: Structural, Optical, and Electrical Characteristics

The microstructural, electrical, and optical properties of Cu-doped and undoped ZnTe thin films grown on glass substrates are covered in this article. To determine the chemical makeup of these materials, both energy-dispersive X-ray (EDAX) spectroscopy and X-ray photoelectron spectroscopy were employed. The cubic zinc-blende crystal structure of ZnTe and Cu-doped ZnTe films was discovered using X-ray diffraction crystallography. According to these microstructural studies, the average crystallite size increased as the amount of Cu doping increased, whereas the microstrain decreased as the crystallinity increased; hence, defects were minimized. The Swanepoel method was used to compute the refractive index, and it was found that the refractive index rises as the Cu doping levels rises. The optical band gap energy was observed to decrease from 2.225 eV to 1.941 eV as the Cu content rose from 0% to 8%, and then slightly increase to 1.965 eV at a Cu concentration of 10%. The Burstein-Moss effect may be connected to this observation. The larger grain size, which lessens the dispersion of the grain boundary, was thought to be the cause of the observed increase in the dc electrical conductivity with an increase in Cu doping. In structured undoped and Cu-doped ZnTe films, there were two carrier transport conduction mechanisms that could be seen. According to the Hall Effect measurements, all the grown films exhibited a p-type conduction behavior. In addition, the findings demonstrated that as the Cu doping level rises, the carrier concentration and the Hall mobility similarly rise, reaching an ideal Cu concentration of 8 at.%, which is due to the fact that the grain size decreases grain boundary scattering. Furthermore, we examined the impact of the ZnTe and ZnTe:Cu (at Cu 8 at.%) layers on the efficiency of the CdS/CdTe solar cells.

Enhancement of Luminescence of PET Films after Swift Heavy Ion Irradiation

The novelty of the study is that the ordering that occurs in a PET film under the action of SHI irradiation manifests itself as an increase in the integral intensity of intrinsic luminescence. The Urbach behaviour of the red shift of the absorption edge is used as a baseline for further analysis of experimental optical transmission spectra of PET films irradiated by swift heavy ions (SHI) previously published by the authors. Negative deviations of the experimental spectra from the Urbach baseline in the visible and UV parts of the spectrum are attributed to enhanced by SHI irradiation intrinsic luminescence. The observed dependence of the integral intensity of luminescence of irradiated PET films on the SHI fluence and ion charge provides further confirmation of the presence of SHI-induced ordering of the molecular structure in SHI latent tracks.

Hybrid Dispersion Model Characterization of PAZO Azopolymer Thin Films over the Entire Transmittance Spectrum Measured in the UV/VIS/NIR Spectral Region

Notwithstanding the significant optical applicability of PAZO polymer films, there are no accurate data about their optical characteristics. To remedy this shortcoming, in this study three PAZO polymer thin films are characterized, with dissimilar thicknesses, on glass substrates using only one UV/VIS/NIR transmittance spectrum T(λ) per sample and an original hybrid dispersion model (HDM). HDM is based on the Tauc-Lorentz model, the new amorphous dispersion formula, the Tauc-Lorentz-Urbach model of Foldyna and the Tauc-Lorentz-Urbach model of Rodriguez. HDM with two oscillators is employed in characterizations of the PAZO polymer films in the range [300, 2500] nm, whereby the root-mean-square deviation (RMSD) of the fitted transmittance spectrum with respect to T(λ) does not exceed 1.6 × 10^-3. Decreasing RMSD by 2.3% to 94.4% is demonstrated by employing HDM compared with the above mentioned four popular dispersion models, for each one of the studied films. HDM is applicable to amorphous films independent of their thickness as well as to cases of non-transparent substrate.

Effects of Vacuum and Air Annealing on Structural, Morphological, Optical, and Electrical Properties of Multilayer CdZnS Thin Films for Photovoltaic and Optoelectronic Applications

Multilayer CdZnS (CZS) thin film was deposited on soda lime glass substrates. After deposition, the films were vacuum and air annealed at 100 °C, 200 °C, 300 and 400 °C for 1 h. Effects of vacuum and air annealing on structural, morphological, optical, and electrical properties of multilayer CZS films with increasing annealing temperature (IAT) were studied. The structural analysis revealed that the films were polycrystalline with hexagonal structure having a prominent/intensive peak along the (002) plane at 300 and 400 °C. The crystallite size of nanoparticles increased from 18.4 to 20.5 nm under air annealing and from 18.4 to 26.9 nm under vacuum annealing, showing the significance of annealing on nanoparticle grain growth. According to morphological analysis, the multilayer technique provides homogeneous film distribution over the substrate. The transmittance graphs of films revealed that it increased up to 92% in the visible and NIR regions under vacuum annealing and up to 52% under air annealing. Vacuum annealing enhanced the band gap energies more significantly than air annealing. The electrical resistivity increased with IAT, showing that structural, morphological, optical, and electrical properties of the multilayer thin films of CZS were strongly dependent on vacuum and air annealing.

Optical Characterization of H-Free a-Si Layers Grown by rf-Magnetron Sputtering by Inverse Synthesis Using Matlab: Tauc–Lorentz–Urbach Parameterization

Several, nearly-1-µm-thick, pure, unhydrogenated amorphous-silicon (a-Si) thin layers were grown at high rates by non-equilibrium rf-magnetron Ar-plasma sputtering (RFMS) onto room-temperature low-cost glass substrates. A new approach is employed for the optical characterization of the thin-layer samples, which is based on some new formulae for the normal-incidence transmission of such a samples and on the adoption of the inverse-synthesis method, by using a devised Matlab GUI environment. The so-far existing limiting value of the thickness-non-uniformity parameter, Δd, when optically characterizing wedge-shaped layers, has been suppressed with the introduction of the appropriate corrections in the expression of transmittance. The optical responses of the H-free RFMS-a-Si thin films investigated, were successfully parameterized using a single, Kramers–Krönig (KK)-consistent, Tauc–Lorentz oscillator model, with the inclusion in the model of the Urbach tail (TLUC), in the present case of non-hydrogenated a-Si films. We have also employed the Wemple–DiDomenico (WDD) single-oscillator model to calculate the two WDD dispersion parameters, dispersion energy, Ed, and oscillator energy, Eso. The amorphous-to-crystalline mass-density ratio in the expression for Ed suggested by Wemple and DiDomenico is the key factor in understanding the refractive index behavior of the a-Si layers under study. The value of the porosity for the specific rf-magnetron sputtering deposition conditions employed in this work, with an Ar-pressure of ~4.4 Pa, is found to be approximately 21%. Additionally, it must be concluded that the adopted TLUC parameterization is highly accurate for the evaluation of the UV/visible/NIR transmittance measurements, on the H-free a-Si investigated. Finally, the performed experiments are needed to have more confidence of quick and accurate optical-characterizations techniques, in order to find new applications of a-Si layers in optics and optoelectronics.

Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T(λ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy of characterization, of the average film thickness d¯ and the thickness non-uniformity ∆d over the illuminated area, increases, employing a simple dual transformation utilizing the product T(λ)xs(λ), where Tsm(λ) is the smoothed spectrum of T(λ) and xs(λ) is the substrate absorbance. Secondly, an approach is proposed for selecting an interval of wavelengths, so that using envelope points only from this interval provides the most accurate characterization of d¯ and ∆d, as this approach is applicable no matter whether the substrate is transparent or non-transparent. Thirdly, the refractive index n(λ) and the extinction coefficient k(λ) are computed, employing curve fitting by polynomials of the optimized degree of 1/λ, instead of by previously used either polynomial of the optimized degree of λ or a two-term exponential of λ. An algorithm is developed, applying these three means, and implemented, to characterize a-Si and As98Te2 thin films. Record high accuracy within 0.1% is achieved in the computation of d¯ and n(λ) of these films.

Growth and Investigation of Annealing Effects on Ternary Cd1-xMgxO Nanocomposit Thin Films

Thin films of Cd_1−xMg_xO (CdMgO) (0 ≤ x ≤ 1) were investigated by depositing the films on glass substrates using the co-evaporation technique. The structural, surface morphological, optical, and electrical characteristics of these films were studied as a function of Mg content after annealing at 350 °C. The XRD analysis showed that the deposited films had an amorphous nature. The grain size of the films reduced as the Mg concentration increased, as evidenced by the surface morphology, and EDAX supported the existence of Mg content. It was observed that as the films were annealed, the transmittance of the CdMgO films saw an increase of up to 85%. The blue shift of the absorption edge was observed by the increase of Mg content, which was useful for enhancing the efficiency of solar cells. The optical band gap increased from 2.45 to 6.02 eV as the Mg content increased. With increased Mg content, the refractive index reduced from 2.49 to 1.735, and electrical resistivity increased from 535 Ω cm to 1.57 × 10⁶ Ω cm.

Optical Transmittance for Strongly-Wedge-Shaped Semiconductor Films: Appearance of Envelope-Crossover Points in Amorphous As-Based Chalcogenide Materials

In this work, we study the influence of the geometry of a thin film on its transmission spectrum, as measured on amorphous As-based chalcogenide layers grown onto 1-mm-thick soda-lime-silica glass substrates. A new method is suggested for a comprehensive optical characterization of the film-on-substrate specimen, which is based upon some novel formulae for the normal-incidence transmittance of such a specimen. It has to be emphasized that they are not limited to the usual cases, where the refractive index, n, of the film and that of the thick transparent substrate, s, must obey: n2>>k2 and s2>>k2, respectively, where k stands for the extinction coefficient of the semiconductor. New expressions for the top and bottom envelopes of the transmission spectrum are also obtained. The geometry limitation usually found when characterizing strongly-wedge-shaped films, has been eliminated with the introduction of an appropriate parameter into the corresponding equations. The presence of crossover points in the top and bottom envelopes of the transmission spectrum, for these strongly-wedge-shaped chalcogenide samples, has been both theoretically predicted and experimentally confirmed.

Optical Characterization of AsxTe100-x Films Grown by Plasma Deposition Based on the Advanced Optimizing Envelope Method

Three As_xTe_100−x films with different x and dissimilar average thickness d¯ are characterized mainly from one interference transmittance spectrum T(λ = 300 to 3000 nm) of such film on a substrate based on the advanced optimizing envelope method (AOEM). A simple dual transformation of T(λ) is proposed and used for increasing the accuracy of computation of its envelopes T₊(λ) and T₋(λ) accounting for the significant glass substrate absorption especially for λ > 2500 nm. The refractive index n(λ) of As₄₀Te₆₀ and As₉₈Te₂ films is determined with a relative error <0.30%. As far as we know, the As₈₀Te₂₀ film is the only one with anomalous dispersion and the thickest, with estimated d¯ = 1.1446 nm, ever characterized by an envelope method. It is also shown and explained why the extinction coefficient k(λ) of any of the three As_xTe_100−x films is computed more accurately from the quantity T_i(λ) = [T₊(λ)T₋(λ)]^0.5 compared to its commonly employed computation from T₊(λ). The obtained results strengthen our conviction that the AOEM has a capacity for providing most accurate optical characterization of almost every dielectric or semiconductor film with d¯ > 300 nm on a substrate, compared to all the other methods for characterization of such films only from T(λ).

Pulsed Laser Deposition of Indium Tin Oxide Thin Films on Nanopatterned Glass Substrates

Indium tin oxide (ITO) thin films were grown on nanopatterned glass substrates by the pulsed laser deposition (PLD) technique. The deposition was carried out at 1.2 J/cm2 laser fluence, low oxygen pressure (1.5 Pa) and on unheated substrate. Arrays of periodic pillars with widths of ~350 nm, heights of ~250 nm, and separation pitches of ~1100 nm were fabricated on glass substrates using UV nanoimprint lithography (UV-NIL), a simple, cost-effective, and high throughput technique used to fabricate nanopatterns on large areas. In order to emphasize the influence of the periodic patterns on the properties of the nanostructured ITO films, this transparent conductive oxide (TCO) was also grown on flat glass substrates. Therefore, the structural, compositional, morphological, optical, and electrical properties of both non-patterned and patterned ITO films were investigated in a comparative manner. The energy dispersive X-ray analysis (EDX) confirms that the ITO films preserve the In2O3:SnO2 weight ratio from the solid ITO target. The SEM and atomic force microscopy (AFM) images prove that the deposited ITO films retain the pattern of the glass substrates. The optical investigations reveal that patterned ITO films present a good optical transmittance. The electrical measurements show that both the non-patterned and patterned ITO films are characterized by a low electrical resistivity (<2.8 × 10−4). However, an improvement in the Hall mobility was achieved in the case of the nanopatterned ITO films, evidencing the potential applications of such nanopatterned TCO films obtained by PLD in photovoltaic and light emitting devices.

Synthesis of the Novel Type of Bimodal Ceramic Nanowires from Polymer and Composite Fibrous Mats

The purpose of this paper was to produce SiO₂ and TiO₂ nanowires via the electrospinning process from a polyvinylpyrrolidone (PVP)/Tetraethyl orthosilicate (TEOS)/Titanium (IV) butoxide (TNBT)/dimethylformamide (DMF) and ethanol (EtOH) solution. The as-obtained nanofibers were calcined at temperatures ranging from 400 °C to 600 °C in order to remove the organic phase. The one-dimensional ceramic nanostructures were studied using a scanning electron microscope (SEM) and a transmission electron microscope (TEM) to analyze the influence of the used temperature on the morphology and structures of the obtained ceramic nanomaterials. In order to examine the chemical structure of the nanowires, energy dispersive spectrometry (EDX) and Fourier-Transform Infrared spectroscopy (FTIR) were used. The optical property analysis was performed on the basis of UV-Vis spectra of absorbance as a function of the wavelength. Using the modified Swanepoel method, which the authors proposed and the recorded absorbance spectra allowed to determine the banded refractive index n, real n′ and imaginary k part of the refractive index as a function of the wavelength, complex dielectric permeability ε, and real and imaginary part ε_r and ε_i of the dielectric permeability as a function of the radiation energy of the produced ceramic nanowires.

Large-Scale and Defect-Free Silicon Metamaterials with Magnetic Response

All-dielectric metamaterials offer a potential low-loss alternative to plasmonic metamaterials at optical frequencies. Here, we experimentally demonstrate a silicon based large-scale magnetic metamaterial, which is fabricated with standard photolithography and conventional reactive ion etching process. The periodically arrayed silicon sub-wavelength structures possess electric and magnetic responses with low loss in mid-infrared wavelength range. We investigate the electric and magnetic resonances dependencies on the structural parameters and demonstrate the possibility of obtaining strong dielectric-based magnetic resonance through a broad band range. The optical responses are quite uniform over a large area about 2 × 2 cm². The scalability of this design and compatibility fabrication method with highly developed semiconductor devices process could lead to new avenues of manipulating light for low-loss, large-area and real integrated photonic applications.

Physioelectrochemical and DFT investigation of metal oxide/p-type conductive polymer nanoparticles as an efficient catalyst for the electrocatalytic oxidation of methanol

Poly tyramine–NiO as an efficient electrocatalyst was prepared by in situ electropolymerization of tyramine in the presence of the SDS under ultrasonic irradiation.

Synthesis, characterization, structural, optical properties and catalytic activity of reduced graphene oxide/copper nanocomposites

This paper reports on the synthesis and use of copper nanoparticles supported on reduced graphene oxide, as separable catalysts for N-arylation of phenylurea with aryl halides under ligand-free and microwave conditions. Also, the structural and optical properties are studied.

Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys

The design of optoelectronic devices fabricated from III-nitride materials is aided by knowledge of the refractive index and absorption coefficient of these materials. The optical properties of GaN, AlN and AlGaN grown by MOVPE on sapphire substrates were investigated by means of transmittance and reflectance measurements. Thin (less than 0.5 μm) single crystal films were employed to insure that transmission measurements could be obtained well above the optical band gap. The influence of alloy broadening on the absorption edge was investigated by using a series of AlGaN alloy samples with a range of Al compositions. The optical absorption coefficient above the band gap was obtained for AlGaN having up to 38% Al composition. The refractive index below the band gap was determined for the same series of samples. These properties provide information critical to the optimal design of solar blind detectors or other optoelectronic devices.

On-line thickness measurement for two-layer systems on polymer electronic devices

During the manufacturing of printed electronic circuits, different layers of coatings are applied successively on a substrate. The correct thickness of such layers is essential for guaranteeing the electronic behavior of the final product and must therefore be controlled thoroughly. This paper presents a model for measuring two-layer systems through thin film reflectometry (TFR). The model considers irregular interfaces and distortions introduced by the setup and the vertical vibration movements caused by the production process. The results show that the introduction of these latter variables is indispensable to obtain correct thickness values. The proposed approach is applied to a typical configuration of polymer electronics on transparent and non-transparent substrates. We compare our results to those obtained using a profilometer. The high degree of agreement between both measurements validates the model and suggests that the proposed measurement method can be used in industrial applications requiring fast and non-contact inspection of two-layer systems. Moreover, this approach can be used for other kinds of materials with known optical parameters.

Mesopore-free hollow silica particles with controllable diameter and shell thickness via additive-free synthesis

Mesopore-free hollow silica particles with a spherical shape, smooth surface, and controllable diameter (from 80 to 300 nm) and shell thickness (from 2 to 25 nm) were successfully prepared using an additive-free synthesis method. Different from other hollow particle developments, a mesopore-free shell was produced because of the absence of additive. Although common reports pointed out the importance of the additional additive in pasting and growing silica on the surface of a template, here we preferred to exploit the effect of the template charge in gaining the silica coating process. To form the silica, basic amino acid (i.e., lysine) was used as a catalyst to replace ammonia or hydrazine, which is harmless and able to control the silica growth and produce hollow particles with smooth surfaces. Control of the particle diameter was drastically achieved by altering the size of the template. The flexibility of the process in controlling the shell thickness was predominantly attained by varying the compositions of the reactants (i.e., silica source and catalyst). The present mesopore-free hollow particles could be efficiently used for various applications, especially for thermal insulator and optical devices because of their tendency not to adsorb large molecules, as confirmed by adsorption analysis.

SPUTTERED TiO2 FILMS FOR PHOTOVOLTAIC CELL'S ANTIREFLECTION COATING

TiO2 films were prepared by the magnetron sputter system with various oxygen partial pressure ratios, for the application of photovoltaic (PV) cells, TiO2 single-layer and SiO2/TiO2 double-layer antireflection (AR) coatings were deposited on Si substrate. The experimental results indicate that TiO2 film deposited at oxygen partial pressure ratio of 15.4% exhibits smooth surface morphology, amorphous structure, and good optical transmittance, which is suitable for AR coating in the PV cell structure system. Furthermore, the weighted average reflectance in the range of 400–900 nm was about 10.3% and 3.7% for the TiO2 single-layer and SiO2/TiO2 double-layer AR coatings, respectively. With a double-layer AR coating, a 50.8% improvement in the efficiency of a Si PV cell was achieved.

Thermally Induced Nano-Structural and Optical Changes of nc-Si:H Deposited by Hot-Wire CVD

We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200-700 degrees C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as identical withSi-H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures >/=400 degrees C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.

Determination of properties of wedged, nonuniformly thick, and absorbing thin films by using a new numerical method

Nonuniformity in the thickness of thin films can severely distort their transmission spectra as compared with those of flat, smooth films. Methods that extract properties such as refractive index, thickness, and extinction coefficient of such films can suffer inaccuracies when they are applied to wedged or nonuniformly thick films. To accurately extract optical properties of nonuniform films, we have developed a novel numerical method and efficient constitutive relations that can determine film properties from just the transmission spectrum for films that are locally smooth with negligible scattering loss. This optimum parameter extraction (OPE) method can accommodate films with two-dimensional thickness variation that would result in significant errors in the values of refractive index and film thickness if not considered. We show that for carefully chosen test cases and for actual pulsed-laser-deposition AlN thin films, properties such as refractive index, extinction coefficient, and film thickness were very accurately determined by using our OPE method. These results are compared with previous techniques to determine the properties of thin films, and the accuracy of and applicable conditions for all these methods are discussed.

Influence of substrate absorption on the optical and geometrical characterization of thin dielectric films

The role played by a glass substrate on the accurate determination of the optical constants and the thickness of a thin dielectric film deposited on it, when well-known envelope methods are used, is discussed. Analytical expressions for the two envelopes of the optical transmission spectra corresponding to film. with both uniform and nonuniform thicknesses are derived, assuming the substrate to be a weakly absorbing layer. It is shown that accurate determination of the refractive index and the film thickness is notably improved when the absorption of the substrate is considered. The analytical expressions for the upper and lower envelope, are used to characterize optically and geometrically both uniform and nonuniform amorphous chalcogenide films. The results obtained are compared with those derived by use of expressions for the envelopes that neglect the substrate absorption. The comparison shows that overestimated refractive indexes and underestimated thicknesses are obtained when the conventional approach, in which the substrate absorption is neglected, is used.

Expressions for determination of layer absorbances of a weakly absorbing double-layer sample through reflectance at the Brewster angles

A new technique for determining absorbances of interferenceless (incoherent) layers based on measurements of the ratio of the front and the back reflectivities of a double-layer sample at the Brewster angles is proposed. A double-layer stack must have at least one absorbing layer, and the two layers should be interferenceless and should be thicker than the wavelength of the incident light. We found that under these conditions the ratio of the front and the back reflectivities at the Brewster angle of a sample surface is directly related to layer absorbance. For a layer with a known thickness this means finding the extinction coefficient of the layer material. In comparison with the conventional method for measuring transmittance, the advantage of this approach is that it affords an opportunity to get rid of the influence of surface effects on the measuring volume absorption coefficient. For a thick layer with known thickness, it makes possible the determination of a small bulk absorption on a background with even greater surface effects. We trust that this technique will prove to be powerful for measuring the extinction coefficients of weakly absorbing materials.

Determination of thickness, refractive index, and thickness irregularity for semiconductor thin films from transmission spectra

A simplified theoretical model has been proposed to predict optical parameters such as thickness, thickness irregularity, refractive index, and extinction coefficient from transmission spectra. The proposed formula has been solved for thickness and thickness irregularity in the transparent region, and then the refractive index is calculated for the entire spectral region by use of the interference fringes order. The extinction coefficient is then calculated with the exact formula in the transparent region, and an appropriate model for the refractive index is used to solve for the extinction coefficient in the absorption region (where the interference fringes disappear). The proposed model is tested with the theoretical predicted data as well as experimental data. The calculation shows that the approximations used for solving a multiparameter nonlinear equation result in no significant errors.