Thermoelectric power in graphene

Controlling the Thermoelectric Behavior of La-Doped SrTiO3 through Processing and Addition of Graphene Oxide

The addition of graphene has been reported as a potential route to enhance the thermoelectric performance of SrTiO₃. However, the interplay between processing parameters and graphene addition complicates understanding this enhancement. Herein, we examine the effects of processing parameters and graphene addition on the thermoelectric performance of La-doped SrTiO₃ (LSTO). Briefly, two types of graphene oxide (GO) at different oxidation degrees were used, while the LSTO pellets were densified under two conditions with different reducing strengths (with/without using oxygen-scavenging carbon powder bed muffling). Raman imaging of the LSTO green body and sintered pellets suggests that the added GO sacrificially reacts with the lattice oxygen, which creates more oxygen vacancies and improves electrical conductivity regardless of the processing conditions. The addition of mildly oxidized electrochemical GO (EGO) yields better performance than the conventional heavily oxidized chemical GO (CGO). Moreover, we found that muffling the green body with an oxygen-scavenging carbon powder bed during sintering is vital to achieving a single-crystal-like temperature dependence of electrical conductivity, implying that a highly reducing environment is critical for eliminating the grain boundary barriers. Combining 1.0 wt % EGO addition with a highly reducing environment leads to the highest electrical conductivity of 2395 S cm^-1 and power factor of 2525μW m^-1 K^-2 at 300 K, with an improved average zT value across the operating temperature range of 300-867 K. STEM-EELS maps of the optimized sample show a pronounced depletion of Sr and evident deficiency of O and La at the grain boundary region. Theoretical modeling using a two-phase model implies that the addition of GO can effectively improve carrier mobility in the grain boundary phase. This work provides guidance for the development of high-performance thermoelectric ceramic oxides.

Thermodefect voltage in graphene nanoribbon junctions

Thermoelectric junctions are often made of components of different materials characterized by distinct transport properties. Single material junctions, with the same type of charge carriers, have also been considered to investigate various classical and quantum effects on the thermoelectric properties of nanostructured materials. We here introduce the concept of defect-induced thermoelectric voltage, namely,thermodefect voltage, in graphene nanoribbon (GNR) junctions under a temperature gradient. Our thermodefect junction is formed by two GNRs with identical properties except the existence of defects in one of the nanoribbons. At room temperature the thermodefect voltage is highly sensitive to the types of defects, their locations, as well as the width and edge configurations of the GNRs. We computationally demonstrate that the thermodefect voltage can be as high as 1.7 mV K^-1for 555-777 defects in semiconducting armchair GNRs. We further investigate the Seebeck coefficient, electrical conductance, and electronic thermal conductance, and also the power factor of the individual junction components to explain the thermodefect effect. Taken together, our study presents a new pathway to enhance the thermoelectric properties of nanomaterials.

Enhanced Thermoelectric Conversion Efficiency of CVD Graphene with Reduced Grain Sizes

The grain size of CVD (Chemical Vapor Deposition) graphene was controlled by changing the precursor gas flow rates, operation temperature, and chamber pressure. Graphene of average grain sizes of 4.1 µm, 2.2 µm, and 0.5 µm was synthesized in high quality and full coverage. The possibility to tailor the thermoelectric conversion characteristics of graphene has been exhibited by examining the grain size effect on the three elementary thermal and electrical properties of σ, S, and k. Electrical conductivity (σ) and Seebeck coefficients (S) were measured in a vacuum for supported graphene on SiO₂/Si FET (Field Effect Transistor) substrates so that the charge carrier density could be changed by applying a gate voltage (VG). Mobility (µ) values of 529, 459, and 314 cm²/V·s for holes and 1042, 745, and 490 cm²/V·s for electrons for the three grain sizes of 4.1 µm, 2.2 µm, and 0.5 µm, respectively, were obtained from the slopes of the measured σ vs. VG graphs. The power factor (PF), the electrical portion of the thermoelectric figure of merit (ZT), decreased by about one half as the grain size was decreased, while the thermal conductivity (k) decreased by one quarter for the same grain decrease. Finally, the resulting ZT increased more than two times when the grain size was reduced from 4.1 µm to 0.5 µm.

Thermal transport in graphene oxide--from ballistic extreme to amorphous limit

Graphene oxide is being used in energy, optical, electronic and sensor devices due to its unique properties. However, unlike its counterpart - graphene - the thermal transport properties of graphene oxide remain unknown. In this work, we use large-scale molecular dynamics simulations with reactive potentials to systematically study the role of oxygen adatoms on the thermal transport in graphene oxide. For pristine graphene, highly ballistic thermal transport is observed. As the oxygen coverage increases, the thermal conductivity is significantly reduced. An oxygen coverage of 5% can reduce the graphene thermal conductivity by ~90% and a coverage of 20% lower it to ~8.8 W/mK. This value is even lower than the calculated amorphous limit (~11.6 W/mK for graphene), which is usually regarded as the minimal possible thermal conductivity of a solid. Analyses show that the large reduction in thermal conductivity is due to the significantly enhanced phonon scattering induced by the oxygen defects which introduce dramatic structural deformations. These results provide important insight to the thermal transport physics in graphene oxide and offer valuable information for the design of graphene oxide-based materials and devices.

Thermal properties of graphene and nanostructured carbon materials

Recent years have seen a rapid growth of interest by the scientific and engineering communities in the thermal properties of materials. Heat removal has become a crucial issue for continuing progress in the electronic industry, and thermal conduction in low-dimensional structures has revealed truly intriguing features. Carbon allotropes and their derivatives occupy a unique place in terms of their ability to conduct heat. The room-temperature thermal conductivity of carbon materials span an extraordinary large range--of over five orders of magnitude--from the lowest in amorphous carbons to the highest in graphene and carbon nanotubes. Here, I review the thermal properties of carbon materials focusing on recent results for graphene, carbon nanotubes and nanostructured carbon materials with different degrees of disorder. Special attention is given to the unusual size dependence of heat conduction in two-dimensional crystals and, specifically, in graphene. I also describe the prospects of applications of graphene and carbon materials for thermal management of electronics.

Phonon-drag thermopower in an armchair graphene nanoribbon

We calculate the phonon-drag thermopower S(g) of an armchair graphene nanoribbon (AGNR) in the boundary scattering regime of phonons. S(g) is studied as a function of temperature, Fermi energy and width of the AGNR. At very low temperatures T, S(g) is exponentially suppressed and an activated behavior is observed which is characteristic of one-dimensional carriers. This is in contrast to the power law dependence in graphene in the Bloch-Grüneisen regime. However, at higher T, S(g) in the AGNR levels off. S(g) also shows strong dependence on Fermi energy and width of the AGNR. The magnitude of S(g) in the AGNR is compared with that in single-wall carbon nanotube and graphene.