Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering

Resonant tip-enhanced Raman scattering by CdSe nanocrystals on plasmonic substrates

Tip-enhanced Raman scattering (TERS) has recently emerged as a powerful technique for studying the local properties of low dimensional materials. Being a plasmon driven system, a dramatic enhancement of the TERS sensitivity can be achieved by an appropriate choice of the plasmonic substrate in the so-called gap-mode configuration. Here, we investigate the phonon properties of CdSe nanocrystals (NCs) utilizing gap-mode TERS. Using the Langmuir-Blodgett technique, we homogeneously deposited submonolayers of colloidal CdSe NCs on two different nanostructured plasmonic substrates. Amplified by resonant gap-mode TERS, the scattering by the optical phonon modes of CdSe NCs is markedly enhanced making it possible to observe up to the third overtone of the LO mode reliably. The home-made plasmonic substrates and TERS tips allow the analysis of the TERS images of CdSe phonon modes with nanometer spatial resolution. The CdSe phonon scattering intensity is strongly correlated with the local electromagnetic field distribution across the plasmonic substrates.

The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

Since the first report in the early 2000s, there have been several experimental configurations that have demonstrated enhancement and spatial resolution of tip-enhanced Raman spectroscopy (TERS). The combination of a plasmonic substrate and a metallic tip is one suitable approach to achieve even higher enhancement and lateral resolution. In this contribution, we demonstrate TERS on a monolayer of MoS₂ on an array of Au nanodisks. The Au nanodisks were prepared by electron beam writing. Thereafter, MoS₂ was transferred onto the plasmonic substrate via the exfoliation technique. We witness an unprecedented enhancement and spatial resolution in the experiments. In the TERS image a ring-like shape is observed that matches the edges of the nanodisks. TERS enhancement at the edges is about 170 times stronger than at the center of the nanodisks. For a better understanding of the experimental results, finite element method (FEM) simulations were employed to simulate the TERS image of the MoS₂/plasmonic heterostructure. Our calculations show a higher electric field concentration at the edges that exponentially decays to the center. Therefore, it reproduces the ring-like shape of the experimental image. Moreover, the calculations suggest a TERS enhancement of 135 at the edges compared to the center, which is in very good agreement with the experimental data. According to our calculations, the spatial resolution is also increased at the edges. For comparison, FEM simulations of a tip-flat metal substrate system (conventional gap-mode TERS) were carried out. The calculations confirmed a 110 times stronger enhancement at the edges of the nanodisks than that of conventional gap-mode TERS and explained the experimental maps. Our results provide not only a deeper understanding of the TERS mechanism of this heterostructure, but can also help in realizing highly efficient TERS experiments using similar systems.

Probing Thermal Flux in Twinned Ge Nanowires through Raman Spectroscopy

We report a noninvasive optical technique based on micro-Raman spectroscopy to study the temperature-dependent phonon behavior of normal (nondefective) and twinned germanium nanowires (Ge-NWs). We studied thermophysical properties of Ge-NWs from Raman spectra, measured by varying excitation laser power at ambient condition. We derived the laser-induced temperature rise during Raman measurements by analyzing the Raman peak position for both the NWs, and for a comparative study we performed the same for bulk Ge. The frequency of the Ge-Ge phonon mode softens for all the samples with the increase in temperature, and the first-order temperature coefficient (χT) for defected NWs is found to be higher than normal NWs and bulk. We demonstrated that apart from the size, the lamellar twinning and polytype phase drastically affect the heat transport properties of NWs.

Electronic Biosensors Based on III-Nitride Semiconductors

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Selective growth and ordering of SiGe nanowires for band gap engineering

Selective growth and self-organization of silicon-germanium (SiGe) nanowires (NWs) on focused ion beam (FIB) patterned Si(111) substrates is reported. In its first step, the process involves the selective synthesis of Au catalysts in SiO₂-free areas; its second step involves the preferential nucleation and growth of SiGe NWs on the catalysts. The selective synthesis process is based on a simple, room-temperature reduction of gold salts (Au³⁺Cl₄⁻) in aqueous solution, which provides well-organized Au catalysts. By optimizing the reduction process, we are able to generate a bidimensional regular array of Au catalysts with self-limited sizes positioned in SiO₂-free windows opened in a SiO₂/Si(111) substrate by FIB patterning. Such Au catalysts subsequently serve as preferential nucleation and growth sites of well-organized NWs. Furthermore, these NWs with tunable position and size exhibit the relevant features and bright luminescence that would find several applications in optoelectronic nanodevices.

Estimating Young's modulus of graphene with Raman scattering enhanced by micrometer tip

We demonstrate that the Raman intensities of G and 2D bands of a suspended graphene can be enhanced using a gold tip with an apex size of 2.3 μm. The enhancement decays with the tip-graphene distance exponentially and remains detectable at a distance of 1.5 μm. Raman mappings show that the enhanced area is comparable to the apex size. Application of a bias voltage to the tip can attract the graphene so that Raman signals are intensified. The exponential enhancement-distance relationship enables the measurement of the graphene deformation, and the Young's modulus of graphene is estimated to be 1.48 TPa.

Tip-enhanced near-field optical microscopy

Tip-enhanced near-field optical microscopy (TENOM) is a scanning probe technique capable of providing a broad range of spectroscopic information on single objects and structured surfaces at nanometer spatial resolution and with highest detection sensitivity. In this review, we first illustrate the physical principle of TENOM that utilizes the antenna function of a sharp probe to efficiently couple light to excitations on nanometer length scales. We then discuss the antenna-induced enhancement of different optical sample responses including Raman scattering, fluorescence, generation of photocurrent and electroluminescence. Different experimental realizations are presented and several recent examples that demonstrate the capabilities of the technique are reviewed.

Tip-enhanced Raman imaging and nano spectroscopy of etched silicon nanowires

Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon mode of the [100] silicon nanowires. The frequency shift and the broadening of the silicon first order phonon are analyzed and compared to the topographical measurements for distinct configuration of nanowires that are disposed in straight, bent or overlapping configuration over a microscope coverslip. The TERS spatial resolution is close to the topography provided by the nanocrystalline diamond tip and subtle spectral changes are observed for different nanowire configurations.

Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering

Vertically aligned GaN nanorod arrays with nonpolar InGaN/GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical and structural properties of single nanorods are optically investigated with a spatial resolution beyond the diffraction limit using tip-enhanced Raman spectroscopy (TERS). This enables the local mapping of variations in the chemical composition, charge distribution, and strain in the MQW region of the nanorods. Nanoscale fluctuations of the In content in the InGaN layer of a few percent can be identified and visualized with a lateral resolution below 35 nm. We obtain evidence for the presence of indium clustering and the formation of cubic inclusions in the wurtzite matrix near the QW layers. These results are directly confirmed by high-resolution TEM images, revealing the presence of stacking faults and different polymorphs close to the surface near the MQW region. The combination of TERS and HRTEM demonstrates the potential of this nanoscale near-field imaging technique, establishing TERS as a very potent, comprehensive, and nondestructive tool for the characterization and optimization of technologically relevant semiconductor nanostructures.