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Pelella A, Grillo A, Faella E, Luongo G, Askari MB, Di Bartolomeo A. Graphene-Silicon Device for Visible and Infrared Photodetection. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47895-47903. [PMID: 34581561 PMCID: PMC8517951 DOI: 10.1021/acsami.1c12050] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/27/2021] [Accepted: 09/19/2021] [Indexed: 06/13/2023]
Abstract
The fabrication of a graphene-silicon (Gr-Si) junction involves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by Si3N4, produces a Gr-Si device, in which the parallel MIS consists of a Gr-Si3N4-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 104. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height (SBH) at zero bias, φb0 = 0.24 eV, the effective Richardson's constant, A* = 7 × 10-10 AK-2 cm-2, and the diode ideality factor n = 2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity of up to 350 mA/W and an external quantum efficiency (EQE) of up to 75% are achieved in the 500-1200 nm wavelength range. Decreases in responsivity to 0.4 mA/W and EQE to 0.03% are observed above 1200 nm, which is in the IR region beyond the silicon optical band gap, in which photoexcitation is driven by graphene. Finally, a model based on two parallel and opposite diodes, one for the Gr-Si junction and the other for the Gr-Si3N4-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.
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Affiliation(s)
- Aniello Pelella
- Department
of Physics and Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno 84084, Italy
- CNR-SPIN, via Giovanni
Paolo II, Fisciano, Salerno 84084, Italy
| | - Alessandro Grillo
- Department
of Physics and Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno 84084, Italy
- CNR-SPIN, via Giovanni
Paolo II, Fisciano, Salerno 84084, Italy
| | - Enver Faella
- Department
of Physics and Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno 84084, Italy
- CNR-SPIN, via Giovanni
Paolo II, Fisciano, Salerno 84084, Italy
| | - Giuseppe Luongo
- IHP-Microelectronics, Im Technologie Park 25, Frankfurt Oder 15236, Germany
| | | | - Antonio Di Bartolomeo
- Department
of Physics and Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno 84084, Italy
- CNR-SPIN, via Giovanni
Paolo II, Fisciano, Salerno 84084, Italy
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Polat O, Coskun M, Efeoglu H, Caglar M, Coskun FM, Caglar Y, Turut A. The temperature induced current transport characteristics in the orthoferrite YbFeO 3-δthin film/p-type Si structure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 33:035704. [PMID: 33108346 DOI: 10.1088/1361-648x/abba69] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Accepted: 09/21/2020] [Indexed: 06/11/2023]
Abstract
The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-δ/p-Si/Al hetero-junction. The orthoferrite YbFeO3-δthin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH)and ideality factornof the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes ofI-Vcurves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-δlayer at the Al/p-Si interface.
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Affiliation(s)
- O Polat
- CEITEC BUT, Brno University of Technology, Purkyňova 123, 612 00 Brno, Czech Republic
- Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
| | - M Coskun
- Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34700 Uskudar, Istanbul, Turkey
| | - H Efeoglu
- Faculty of Engineering, Department of Electrical and Electronics Engineering, Atatürk University, TR-25240 Erzurum, Turkey
| | - M Caglar
- Faculty of Science, Department of Physics, Eskisehir Technical University, Yunusemre Campus, 26470 Eskisehir, Turkey
| | - F M Coskun
- Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34700 Uskudar, Istanbul, Turkey
| | - Y Caglar
- Faculty of Science, Department of Physics, Eskisehir Technical University, Yunusemre Campus, 26470 Eskisehir, Turkey
| | - A Turut
- Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34700 Uskudar, Istanbul, Turkey
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Courtin J, Le Gall S, Chrétien P, Moréac A, Delhaye G, Lépine B, Tricot S, Turban P, Schieffer P, Le Breton JC. A low Schottky barrier height and transport mechanism in gold-graphene-silicon (001) heterojunctions. NANOSCALE ADVANCES 2019; 1:3372-3378. [PMID: 36133562 PMCID: PMC9418477 DOI: 10.1039/c9na00393b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Accepted: 07/25/2019] [Indexed: 06/13/2023]
Abstract
The interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height. However, Fermi level pinning in these systems forbids a total control over interface resistance. The introduction of 2D crystals between semiconductor surfaces and metals may be an interesting route towards this goal. In this work, we study the influence of the introduction of a graphene monolayer between a metal and silicon on the Schottky barrier height. We used X-ray photoemission spectroscopy to rule out the presence of oxides at the interface, the absence of pinning of the Fermi level and the strong reduction of the Schottky barrier height. We then performed a multiscale transport analysis to determine the transport mechanism. The consistency in the measured barrier height at different scales confirms the good quality of our junctions and the role of graphene in the drastic reduction of the barrier height.
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Affiliation(s)
- Jules Courtin
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Sylvain Le Gall
- Group of Electrical Engineering Paris (GeePs), CNRS, CentraleSupélec, Univ. Paris-Sud, Sorbonne Université, CEDEX 11 rue Joliot-Curie 91192 Gif-sur-Yvette France
| | - Pascal Chrétien
- Group of Electrical Engineering Paris (GeePs), CNRS, CentraleSupélec, Univ. Paris-Sud, Sorbonne Université, CEDEX 11 rue Joliot-Curie 91192 Gif-sur-Yvette France
| | - Alain Moréac
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Gabriel Delhaye
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Bruno Lépine
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Sylvain Tricot
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Pascal Turban
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Philippe Schieffer
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Jean-Christophe Le Breton
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
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Graphene Schottky Junction on Pillar Patterned Silicon Substrate. NANOMATERIALS 2019; 9:nano9050659. [PMID: 31027368 PMCID: PMC6566384 DOI: 10.3390/nano9050659] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2019] [Revised: 04/19/2019] [Accepted: 04/22/2019] [Indexed: 11/17/2022]
Abstract
A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector.
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Tabata H, Sato Y, Oi K, Kubo O, Katayama M. Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS 2 van der Waals Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38387-38393. [PMID: 30360048 DOI: 10.1021/acsami.8b14667] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We report on the gas-sensing characteristics of a van der Waals heterojunction consisting of graphene and a MoS2 flake. To extract the response actually originating from the heterojunction area, the other gas-sensitive parts were passivated by gas barrier layers. The graphene/MoS2 heterojunction device demonstrated a significant change in resistance, by a factor of greater than 103, upon exposure to 1 ppm NO2 under a reverse-bias condition, which was revealed to be a direct reflection of the modulation of the Schottky barrier height at the graphene/MoS2 interface. The magnitude of the response demonstrated strong dependences on the bias and back-gate voltages. The response further increased with increasing reverse bias. Conversely, it dramatically decreased when measured at a large forward bias or a large positive back-gate voltage. These behaviors were analyzed using a metal-semiconductor-metal diode model consisting of graphene/MoS2 and counter Ti/MoS2 Schottky diodes.
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Affiliation(s)
- Hiroshi Tabata
- Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering , Osaka University , 2-1 Yamadaoka , Suita , Osaka 565-0871 , Japan
| | - Yuta Sato
- Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering , Osaka University , 2-1 Yamadaoka , Suita , Osaka 565-0871 , Japan
| | - Kouhei Oi
- Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering , Osaka University , 2-1 Yamadaoka , Suita , Osaka 565-0871 , Japan
| | - Osamu Kubo
- Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering , Osaka University , 2-1 Yamadaoka , Suita , Osaka 565-0871 , Japan
| | - Mitsuhiro Katayama
- Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering , Osaka University , 2-1 Yamadaoka , Suita , Osaka 565-0871 , Japan
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Li X, Li B, Fan X, Wei L, Li L, Tao R, Zhang X, Zhang H, Zhang Q, Zhu H, Zhang S, Zhang Z, Zeng C. Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties. NANOSCALE 2018; 10:8377-8384. [PMID: 29701214 DOI: 10.1039/c8nr02005a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Silicon and graphene are two wonder materials, and their hybrid heterostructures are expected to be very interesting fundamentally and practically. In the present study, by adopting fast dry transfer and ultra-high vacuum annealing, atomically flat monolayer graphene is successfully prepared on the chemically active Si(111) substrate. More importantly, the graphene overlayer largely maintains its intrinsic electronic properties, as validated by the results of the energy-dependent electronic transparency, Dirac point observation and quantum coherence characteristics, and further confirmed by first-principles calculations. The intrinsic properties of graphene are retained up to 1030 K. The system of atomically flat and thermally stable graphene on a chemically active silicon surface with preserved inherent characteristics renders the graphene/silicon hybrid a promising system in the design of high-performance devices and the exploitation of interfacial topological quantum effects.
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Affiliation(s)
- Xiaoxia Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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Aydın H, Kalkan SB, Varlikli C, Çelebi C. P3HT-graphene bilayer electrode for Schottky junction photodetectors. NANOTECHNOLOGY 2018; 29:145502. [PMID: 29447121 DOI: 10.1088/1361-6528/aaaaf5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.
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Affiliation(s)
- H Aydın
- Quantum Device Laboratory, Department of Physics, İzmir Institute of Technology, 35430, Izmir, Turkey
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