Strain coupling of oxygen non-stoichiometry in perovskite thin films

Boosting Piezocatalytic Performance of BaTiO3 by Tuning Defects at Room Temperature

Defect engineering constitutes a widely-employed method of adjusting the electronic structure and properties of oxide materials. However, controlling defects at room temperature remains a significant challenge due to the considerable thermal stability of oxide materials. In this work, a facile room-temperature lithium reduction strategy is utilized to implant oxide defects into perovskite BaTiO3 (BTO) nanoparticles to enhance piezocatalytic properties. As a potential application, the piezocatalytic performance of defective BTO is examined. The reaction rate constant increases up to 0.1721 min-1, representing an approximate fourfold enhancement over pristine BTO. The effect of oxygen vacancies on piezocatalytic performance is discussed in detail. This work gives us a deeper understanding of vibration catalysis and provides a promising strategy for designing efficient multi-field catalytic systems in the future.

Achieving Fast Oxygen Reduction on Oxide Electrodes by Creating 3D Multiscale Micro-Nano Structures for Low-Temperature Solid Oxide Fuel Cells

Fast oxygen reduction reaction (ORR) at the cathode is a key requirement for the realization of low-temperature solid oxide fuel cells (SOFCs). While the design of three-dimensional (3D) structures has emerged as a new and promising approach to improving the electrochemical performance of SOFC cathodes, achieving versatile structures and structural stability is still challenging. In this study, we demonstrate a novel architectural design for a superior cathode with fast ORR activity. By employing a completely new fabrication process comprising a 3D printing technique and pulsed laser deposition (PLD), we design 3D La0.8Sr0.2CoO3-δ (LSC) micro-nano structures with the desired shape. 3D-printed yttria-stabilized ZrO2 (YSZ) microstructures significantly increase the ratio of surface area to volume while maintaining suitable ionic conductivity comparable to that of single-crystalline YSZ substrates. Scanning electron microscopy and energy dispersive X-ray microanalysis reveal the formation of crack- or void-free YSZ microstructures and the uniform deposition of LSC films by PLD on the YSZ microstructures. The 3D LSC micro-nano structures show significantly enhanced oxygen surface exchange coefficients (kchem) extracted from electrical conductivity relaxation (ECR) measurements by up to 3 orders of magnitude relative to the bulk LSC. Furthermore, electrochemical impedance spectroscopy measurements verify the kchem values from ECR and no directional difference in the measured ORR activity depending on the shape of 3D microstructures. The dramatic enhancement of the ORR activity of LSC is attributed to the increased film surface areas resulting from the 3D YSZ microstructures.

Tuning Ionic Conductivity in Fluorite Gd-Doped CeO2-Bixbyite RE2O3 (RE = Y and Sm) Multilayer Thin Films by Controlling Interfacial Strain

Interfacial strain in heteroepitaxial oxide thin films is a powerful tool for discovering properties and recognizing the potential of materials performance. Particularly, facilitating ion conduction by interfacial strain in oxide multilayer thin films has always been seen to be a highly promising route to this goal. However, the effect of interfacial strain on ion transport properties is still controversial due to the difficulty in deconvoluting the strain contribution from other interfacial phenomena, such as space charge effects. Here, we show that interfacial strain can effectively tune the ionic conductivity by successfully growing multilayer thin films composed of an ionic conductor Gd-doped CeO2 (GDC) and an insulator RE2O3 (RE = Y and Sm). In contrast to compressively strained GDC-Y2O3 multilayer films, tensile strained GDC-Sm2O3 multilayer films demonstrate the enhanced ionic conductivity of GDC, which is attributed to the increased concentration of oxygen vacancies. In addition, we demonstrate that increasing the number of interfaces has no impact on the further enhancement of the ionic conductivity in GDC-Sm2O3 multilayer films. Our findings demonstrate the unambiguous role of interfacial strain on ion conduction of oxides and provide insights into the rational design of fast ion conductors through interface engineering.

Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films

Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.

Dynamics of Anisotropic Oxygen-Ion Migration in Strained Cobaltites

Orientation control of the oxygen vacancy channel (OVC) is highly desirable for tailoring oxygen diffusion as it serves as a fast transport channel in ion conductors, which is widely exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ion hopping toward preferential vacant sites is a key to clarifying migration pathways. Here we report anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in situ thermal activation in atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to the OVC, determine the crucial role of the tolerance factor for OVC stability, and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable to ionic-oxide electronics.

Ab initio description of oxygen vacancies in epitaxially strained [Formula: see text] at finite temperatures

Epitaxially grown [Formula: see text] (STO) thin films are material enablers for a number of critical energy-conversion and information-storage technologies like electrochemical electrode coatings, solid oxide fuel cells and random access memories. Oxygen vacancies ([Formula: see text]), on the other hand, are key defects to understand and tailor many of the unique functionalities realized in oxide perovskite thin films. Here, we present a comprehensive and technically sound ab initio description of [Formula: see text] in epitaxially strained (001) STO thin films. The novelty of our first-principles study lies in the incorporation of lattice thermal excitations on the formation energy and diffusion properties of [Formula: see text] over wide epitaxial strain conditions ([Formula: see text]%). We found that thermal lattice excitations are necessary to obtain a satisfactory agreement between first-principles calculations and the available experimental data for the formation energy of [Formula: see text]. Furthermore, it is shown that thermal lattice excitations noticeably affect the energy barriers for oxygen ion diffusion, which strongly depend on [Formula: see text] and are significantly reduced (increased) under tensile (compressive) strain. The present work demonstrates that for a realistic theoretical description of oxygen vacancies in STO thin films is necessary to consider lattice thermal excitations, thus going beyond standard zero-temperature ab initio approaches.

Relaxation Mechanisms and Strain-Controlled Oxygen Vacancies in Epitaxial SrMnO3 Films

SrMnO₃ has a rich epitaxial strain-dependent ferroic phase diagram, in which a variety of magnetic orderings, even ferroelectricity, and thus multiferroicity, are accessible by gradually modifying the strain. Different relaxation processes, though, including the presence of strain-induced oxygen vacancies, can severely curtail the possibility of stabilizing these ferroic phases. Here, we report on a thorough investigation of the strain relaxation mechanisms in SrMnO₃ films grown on several substrates imposing varying degrees of strain from slightly compressive (-0.39%) to largely tensile ≈+3.8%. First, we determine the strain dependency of the critical thickness (t _c) below which pseudomorphic growth is obtained. Second, the mechanisms of stress relaxation are elucidated, revealing that misfit dislocations and stacking faults accommodate the strain above t _c. Yet, even for films thicker than t _c, the atomic monolayers below t _c are proved to remain fully coherent. Therefore, multiferroicity may also emerge even in films that appear to be partially relaxed. Last, we demonstrate that fully coherent films with the same thickness present a lower oxygen content for increasing tensile mismatch with the substrate. This behavior proves the coupling between the formation of oxygen vacancies and epitaxial strain, in agreement with first-principles calculations, enabling the strain control of the Mn³⁺/Mn⁴⁺ ratio, which strongly affects the magnetic and electrical properties. However, the presence of oxygen vacancies/Mn³⁺ cations reduces the effective epitaxial strain in the SrMnO₃ films and, thus, the accessibility to the strain-induced multiferroic phase.

Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing

Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La_2/3 Sr_1/3 MnO_{3- δ} film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.

Conductivity in Ferroelectric Barium Titanate: Electrons Versus Oxygen Vacancies

Mobile oxygen vacancies are increasingly widely believed to be responsible for electrical conductivity in perovskite oxide ferroelectrics. Here, this hypothesis is debated. The small-signal conductivity is investigated in oxygen-deficient films of barium titanate, where oxygen vacancies are epitaxially clamped and immobile. The observed behavior of conductivity as a function of temperature and frequency evidences pure electronic processes. Importantly, it is shown that these processes mimic motion of oxygen vacancies, which are immobile. It is also demonstrated that under the applied dc electric field, the electronic processes lead to such effects as coloration and degradation, which before were plausibly ascribed to migration of oxygen vacancies. Finally, it is concluded that the hypothesis of mobile oxygen vacancies is misleading.

Strain-Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides

Strain engineering provides the ability to control the ground states and associated phase transition in epitaxial films. However, the systematic study of the intrinsic character and strain dependency in transition-metal nitrides remains challenging due to the difficulty in fabricating stoichiometric and high-quality films. Here the observation of an electronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dimensionality is reported. By shrinking the film thickness to a critical value of ≈30 unit cells, a profound conductivity reduction accompanied by unexpected volume expansion is observed in CrN films. The electrical conductivity is observed surprisingly when the CrN layer is as thin as a single unit cell thick, which is far below the critical thickness of most metallic films. It is found that the metallicity of an ultrathin CrN film recovers from insulating behavior upon the removal of the as-grown strain by the fabrication of freestanding nitride films. Both first-principles calculations and linear dichroism measurements reveal that the strain-mediated orbital splitting effectively customizes the relatively small bandgap at the Fermi level, leading to an exotic phase transition in CrN. The ability to achieve highly conductive nitride ultrathin films by harnessing strain-control over competing phases can be used for utilizing their exceptional characteristics.

Metal-insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO_2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO₂ capping layer on an epitaxial VO₂ thin film can effectively reduce the resistance of the insulating phase in VO₂, yielding a significantly reduced R_OFF/R_ON ratio. We systematically studied the TiO₂/VO₂ heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO₂ to VO₂ is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

Synthesis and Characterization of SrFexMn1-x(O,F)3-δ Oxide (δ = 0 and 0.5) and Oxyfluoride Perovskite Films

We report the synthesis and characterization of as-grown SrFe_xMn_1-xO_2.5 epitaxial films, which were also subjected to postgrowth oxidation and topotactic fluorination to obtain SrFe_xMn_1-xO₃ and SrFe_xMn_1-xO_2.5-δF_γ films. We show how both the B-site cation and anion composition influence the structural, electronic, and optical properties of this family of perovskite materials. The Fe substitution of Mn in SrMnO_2.5 gradually expands the c-axis parameter, as indicated by X-ray diffraction. With increasing x, the F content incorporated under identical fluorination conditions increases, reaching its maximum in SrFeO_2.5-δF_γ. In the compounds with mixed B-site occupation, the Fe 2p photoemission peaks are shifted upon fluorination, while the Mn 2p peaks are not, suggesting inductive effects lead to asymmetric responses in how F alters the Mn and Fe bonds. Electronic transport measurements reveal all compounds are insulators, with the exception of SrFeO₃, and demonstrate that fluorination increases resistivity for all values of x. Optical absorption spectra in the SrFe_xMn_1-xO_2.5 and SrFe_xMn_1-xO₃ films evolve systematically as a function of x, consistent with a physical scenario in which optical changes with Fe substitution arise from a linear combination of Mn and Fe 3d bands within the electronic structure. In contrast, the F incorporation induces nonlinear changes to the optical response, suggesting a more complex impact on the electronic structure in materials with concurrent B-site and anion site substitution.

Tailoring Nonstoichiometry and Mixed Ionic Electronic Conductivity in Pr0.1Ce0.9O2-δ/SrTiO3 Heterostructures

The oxygen deficiency or excess, as reflected in the nonstoichiometry of oxide films, plays a crucial role in their functional properties for applications such as micro solid oxide fuel cells, catalysis, sensors, ferroelectrics, and memristors. High concentrations of oxygen vacancies may be beneficial or detrimental according to the application, and hence there is interest in controlling the oxygen content of films without resorting to compositional changes. Here, we demonstrate that substantial changes in the nonstoichiometry of Pr_0.1Ce_0.9O_2-δ (PCO), a model mixed ionic electronic conductor, can be achieved by fabricating multilayers with an inert material, SrTiO₃ (STO). We fabricated heterostructures using pulsed laser deposition, keeping the total thickness of PCO and STO constant while varying the number of layers and thickness of each individual layer, to probe the effects of the PCO/STO interfaces. Conductivity measurements as a function of oxygen partial pressure (P_O2) and temperature showed a significant weakening of the P_O2 dependence compared to bulk PCO, which scaled with the density of interfaces. We confirmed that this change was due to variations in nonstoichiometry, by optical transmission measurements, and show that the lower oxygen content is consistent with a decrease in the effective oxygen reduction enthalpy of PCO. These results exemplify the dramatic differences in properties between films and their bulk counterparts, achievable by interface engineering, and provide generalized insight into tailoring the properties of mixed ionic electronic conductors at the nanoscale.

Asymmetric response of electrical conductivity and V valence state to strain in cation-deficient Sr1-yVO3 ultrathin films based on absorption measurements at the V L2- and L3-edges

The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO₃ films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-ray absorption, V L-edge absorption measurements have been performed for Sr_1-yVO₃ films of different thicknesses capped with 4 u.c. (unit cell) SrTiO₃ layers, showing the coexistence of V⁴⁺ and V⁵⁺ in thick films. A different correlation between V valence state and epitaxial strain is observed for Sr_1-yVO₃ ultrathin films, i.e. a variation in V valence state is only observed for tensile-strained films. Sr_1-yVO₃ thin films are metallic and exhibit a thickness-driven metal-insulator transition at different critical thicknesses for tensile and compressive strains. The asymmetric response of electrical conductivity to strain observed in cation-deficient Sr_1-yVO₃ films will be beneficial for functional oxide electronic devices.

Nanoscale mechanical control of surface electrical properties of manganite films with magnetic nanoparticles

Mechanical control of electrical properties in complex heterostructures, consisting of magnetic FeO x nanoparticles on top of manganite films, is achieved using atomic force microscope (AFM) based methods. Under applied pressure of the AFM tip, drop of the electrical conductivity is observed inducing an electrically insulating state upon a critical normal load. Current and surface potential maps suggest that the switching process is mainly governed by the flexoelectric field induced at the sample surface. The relaxation process of the electrical surface potential indicates that the diffusion of oxygen vacancies from the bulk of the manganite films towards the sample surface is the dominant relaxation mechanism. The magnetic FeO x nanoparticles, staying attached to the sample surface after the rubbing, protect the underlying manganite films and provide stability of the observed resistive switching effect. The employed mechanical control gives a new freedom in the design of resistive switching devices since it does not depend on the film thickness, and biasing is not needed.

Strain Effect on Oxygen Evolution Reaction Activity of Epitaxial NdNiO3 Thin Films

Epitaxial strain can cause both lattice distortion and oxygen nonstoichiometry, effects that are strongly coupled at heterojunctions of complex nickelate oxides. Here we decouple these structural and chemical effects on the oxygen evolution reaction (OER) by using a set of coherently strained epitaxial NdNiO₃ films. We show that within the regime where oxygen vacancies (V_O) are negligible, compressive strain is favorable for the OER whereas tensile strain is unfavorable; the former induces orbital splitting, resulting in a higher occupancy in the d_{3 z²- r²} orbital and weaker Ni-O chemisorption. However, when the tensile strain is sufficiently large to promote V_O formation, an increase in the OER is also observed. The partial reduction of Ni³⁺ to Ni²⁺ due to V_O makes the e_g occupancy slightly larger than unity, which is thought to account for the increased OER activity. Our work highlights that epitaxial-strain-induced lattice distortion and V_O generation can be individually or collectively exploited to tune OER activity, which is important for the predictive synthesis of high-performance electrocatalysts.

Uncovering the Effect of Lattice Strain and Oxygen Deficiency on Electrocatalytic Activity of Perovskite Cobaltite Thin Films

Developing cost effective electrocatalysts with high oxygen evolution reaction (OER) activity is essential for large-scale application of many electrochemical energy systems. Although the impacts of either lattice strain or oxygen defects on the OER performance of oxide catalysts have been extensively investigated, the effects of both factors are normally treated separately. In this work, the coupled effects of both strain and oxygen deficiency on the electrocatalytic activity of La0.7Sr0.3CoO3-δ (LSC) thin films grown on single crystal substrates (LaAlO3 (LAO) and SrTiO3 (STO)) are investigated. Electrochemical tests show that the OER activities of LSC films are higher under compression than under tension, and are diminished as oxygen vacancies are introduced by vacuum annealing. Both experimental and computational results indicate that the LSC films under tension (e.g., LSC/STO) have larger oxygen deficiency than the films under compression (e.g., LSC/LAO), which attribute to smaller oxygen vacancy formation energy. Such strain-induced excessive oxygen vacancies in the LSC/STO increases the eg state occupancy and enlarges the energy gap between the O 2p and Co 3d band, resulting in lower OER activity. Understanding the critical role of strain-defect coupling is important for achieving the rational design of highly active and durable catalysts for energy devices.

Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon

Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO₃ films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (ε > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.