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Gence L, Quero F, Escalona M, Wheatley R, Seifert B, Diaz-Droguett D, Retamal MJ, Wallentowitz S, Volkmann UG, Bhuyan H. Wrinkled TiNAgNW Nanocomposites for High-Performance Flexible Electrodes on TEMPO-Oxidized Nanocellulose. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1178. [PMID: 39057855 PMCID: PMC11279476 DOI: 10.3390/nano14141178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2024] [Revised: 06/15/2024] [Accepted: 06/19/2024] [Indexed: 07/28/2024]
Abstract
In this study, we present a novel method for fabricating semi-transparent electrodes by combining silver nanowires (AgNW) with titanium nitride (TiN) layers, resulting in conductive nanocomposite coatings with exceptional electromechanical properties. These nanocomposites were deposited on cellulose nanopaper (CNP) using a plasma-enhanced pulsed laser deposition (PE-PLD) technique at low temperatures (below 200 °C). Repetitive bending tests demonstrate that incorporating AgNW into TiN coatings significantly enhances the microstructure, increasing the electrode's electromechanical robustness by up to four orders of magnitude compared to commercial PET/ITO substrates. Furthermore, the optical and electrical conductivities can be optimized by adjusting the AgNW network density and TiN synthesis temperature. Our results also indicate that the nanocomposite electrodes exhibit improved stability in air and superior adhesion compared to bare AgNW coatings.
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Affiliation(s)
- Loïk Gence
- Functional Materials & Devices Laboratory, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Av. Vicuña Mackenna 4860, Santiago 7820436, Chile
| | - Franck Quero
- Laboratorio de Nanocelulosa y Biomateriales, Departamento de Ingeniería Química, Biotecnología y Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Avenida Beauchef 851, Santiago 8370459, Chile;
| | - Miguel Escalona
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
| | - Robert Wheatley
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
- Millennium Science Initiative Program—Millennium Institute for Research in Optics (MIRO), Santiago, Chile
| | - Birger Seifert
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Av. Vicuña Mackenna 4860, Santiago 7820436, Chile
- Millennium Science Initiative Program—Millennium Institute for Research in Optics (MIRO), Santiago, Chile
| | - Donovan Diaz-Droguett
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Av. Vicuña Mackenna 4860, Santiago 7820436, Chile
- Centro de Energía UC, Av. Vicuña Mackenna 4860, Macul, Santiago 7820436, Chile
| | - María José Retamal
- Facultad de Ingeniería, Universidad Finis Terrae, Santiago 7501015, Chile
| | - Sascha Wallentowitz
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
| | - Ulrich Georg Volkmann
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Av. Vicuña Mackenna 4860, Santiago 7820436, Chile
| | - Heman Bhuyan
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile (U.G.V.); (H.B.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Av. Vicuña Mackenna 4860, Santiago 7820436, Chile
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Study of nitrogen implantation in Ti surface using plasma immersion ion implantation & deposition technique as biocompatible substrate for artificial membranes. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2020; 113:111002. [PMID: 32487408 DOI: 10.1016/j.msec.2020.111002] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2018] [Revised: 02/10/2020] [Accepted: 04/20/2020] [Indexed: 11/21/2022]
Abstract
The present investigation reports the modification of Ti substrates by a plasma technique to enhance their physio-chemical properties as biocompatible substrates for the deposition of artificial membranes. For that purpose, nitrogen ions are implanted into Ti substrate using the plasma immersion ion implantation & deposition (PIII&D) technique in a capacitively coupled radio frequency plasma. The plasma was characterized using optical emission spectroscopy, together with radio frequency compensated Langmuir probe, while the ion current towards the substrate was measured during the implantation process using an opto-electronic device. X-ray photoelectron spectroscopy (XPS) was used for chemical analysis of the surface, confirming the presence of δ-TiN. The penetration depth of the nitrogen ions into the Ti substrate was measured using secondary ions mass spectroscopy (SIMS) while the morphological changes were observed using atomic force microscopy (AFM). A calorimetric assay was used to prove that the TiN samples maintain the biocompatibility of the untreated Ti surface with its native oxide layer. The ion implantation increases the load bearing ability of Ti surface by the formation of α-Ti(N) and δ-TiN phases on the sub-surface of Ti, and maintains the bio compatibility of Ti surface. After the plasma treatment a thin layer of chitosan (CH) was deposited in order to provide a moisturizing matrix for the artificial membrane of 1,2-dipalmitoyl-sn-3- phosphor glycerocholine (DPPC). The CH and subsequently the DPPC were deposited on the plasma deposited TiN substrate by using physical vapor deposition. The formation of artificial membranes was confirmed by AFM, measuring the topography at different temperatures and performing force curves.
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Bonardd S, Morales N, Gence L, Saldías C, Angel FA, Kortaberria G, Leiva A. Doped Poly(3-hexylthiophene) Coatings onto Chitosan: A Novel Approach for Developing a Bio-Based Flexible Electronic. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13275-13286. [PMID: 32067453 DOI: 10.1021/acsami.9b21289] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Conductive and flexible bio-based materials consisting of chitosan films coated with conductive poly(3-hexylthiophene) (P3HT) were prepared. Thermal, optical, mechanical, morphological, wettability, and conductive properties were analyzed. In a very simple and effective method of chitosan film modification, a controlled volume of a P3HT solution was deposited onto a previously formed chitosan film, assisted by the spin coating method. Later, P3HT-coated chitosan films were doped by simple contact with an aqueous solution of HAuCl4. The use of HAuCl4 becomes attractive because the reports on the doping process in this type of material using this reagent are still scarce and recent to date. In addition, since this acid is a well-known metal nanoparticle precursor, its use opens new future perspectives for these materials into new applications. The effect of P3HT concentration and doping times on film properties was studied. Attenuated total reflectance spectroscopy and UV-Vis spectroscopy allowed us to demonstrate that the presence of the P3HT coating and its doping induce significant changes in the vibrational modes and optoelectronic properties of samples. Additionally, the images obtained by scanning electron microscopy showed a well-distributed and homogeneous coating on the surface of chitosan films. Measured conductivity values of doped film samples fall in the range from 821.3 to 2017.4 S/m, representing, to the best of our knowledge, the highest values reported in the literature for chitosan/chitin-based materials. Indeed, these values are around or even higher than those obtained for some materials purely consisting of conductive polymers.
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Affiliation(s)
- Sebastian Bonardd
- Facultad de Ciencias, Centro de Nanotecnología Aplicada, Universidad Mayor, Camino la Pirámide 5750, Santiago 8580745, Chile
- Departamento de Química Física, Facultad de Química, Pontificia Universidad Católica de Chile, Casilla 302, Correo 22, Santiago 7820436, Chile
| | - Natalia Morales
- Departamento de Química Física, Facultad de Química, Pontificia Universidad Católica de Chile, Casilla 302, Correo 22, Santiago 7820436, Chile
| | - Loïk Gence
- Instituto de Física, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 7820436, Chile
| | - César Saldías
- Departamento de Química Física, Facultad de Química, Pontificia Universidad Católica de Chile, Casilla 302, Correo 22, Santiago 7820436, Chile
| | - Felipe A Angel
- Departamento de Química Inorgánica, Facultad de Química y de Farmacia, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
- Centro de Nanotecnología y Materiales Avanzados, CIEN-UC, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
| | - Galder Kortaberria
- Universidad del País Vasco/EuskalHerriko Unibertsitatea, 'Materials + Technologies' Group, Departamento Ingeniería Química y Medio Ambiente, Escuela de Ingeniería de Gipuzkoa, Pza Europa 1, 20018 Donostia-San Sebastián, Spain
| | - Angel Leiva
- Departamento de Química Física, Facultad de Química, Pontificia Universidad Católica de Chile, Casilla 302, Correo 22, Santiago 7820436, Chile
- Centro de Nanotecnología y Materiales Avanzados, CIEN-UC, Pontificia Universidad Católica de Chile, Santiago 7820436, Chile
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