1
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Li J, Hou Y, He Z, Wu H, Zhu Y. Strain Engineering of Ion-Coordinated Nanochannels in Nanocellulose. NANO LETTERS 2024; 24:6262-6268. [PMID: 38743501 DOI: 10.1021/acs.nanolett.4c00867] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Expanding the interlayer spacing plays a significant role in improving the conductivity of a cellulose-based conductor. However, it remains a challenge to regulate the cellulose nanochannel expanded by ion coordination. Herein, starting from multiscale mechanics, we proposed a strain engineering method to regulate the interlayer spacing of the cellulose nanochannels. First-principles calculations were conducted to select the most suitable ions for coordination. Large-scale molecular dynamics simulations were performed to reveal the mechanism of interlayer spacing expansion by the ion cross-linking. Combining the shear-lag model, we established the relationship between interfacial cross-link density and interlayer spacing of an ion-coordinated cellulose nanochannel. Consequently, fast ion transport and current regulation were realized via the strain engineering of nanochannels, which provides a promising strategy for the current regulation of a cellulose-based conductor.
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Affiliation(s)
- JiaHao Li
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| | - YuanZhen Hou
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| | - ZeZhou He
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
| | - HengAn Wu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Science, 15 Beisihuan West Road, Beijing 100190, People's Republic of China
| | - YinBo Zhu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, People's Republic of China
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2
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Sun C, Zhong J, Gan Z, Chen L, Liang C, Feng H, Sun Z, Jiang Z, Li WD. Nanoimprint-induced strain engineering of two-dimensional materials. MICROSYSTEMS & NANOENGINEERING 2024; 10:49. [PMID: 38595945 PMCID: PMC11001999 DOI: 10.1038/s41378-024-00669-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 12/27/2023] [Accepted: 01/18/2024] [Indexed: 04/11/2024]
Abstract
The high stretchability of two-dimensional (2D) materials has facilitated the possibility of using external strain to manipulate their properties. Hence, strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field. Although various types of strain engineering methods have been proposed, deterministic and controllable generation of the strain in 2D materials remains a challenging task. Here, we report a nanoimprint-induced strain engineering (NISE) strategy for introducing controllable periodic strain profiles on 2D materials. A three-dimensional (3D) tunable strain is generated in a molybdenum disulfide (MoS2) sheet by pressing and conforming to the topography of an imprint mold. Different strain profiles generated in MoS2 are demonstrated and verified by Raman and photoluminescence (PL) spectroscopy. The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds, which enables precise control of the strain magnitudes and distributions in MoS2. Furthermore, a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS2. This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes; therefore, it provides prospects for advances in broad nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Chuying Sun
- The University of Hong Kong, Hong Kong, China
| | | | - Zhuofei Gan
- The University of Hong Kong, Hong Kong, China
| | - Liyang Chen
- The University of Hong Kong, Hong Kong, China
| | | | | | - Zhao Sun
- The University of Hong Kong, Hong Kong, China
| | - Zijie Jiang
- The University of Hong Kong, Hong Kong, China
| | - Wen-Di Li
- The University of Hong Kong, Hong Kong, China
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3
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Shanmugam A, Thekke Purayil MA, Dhurjati SA, Thalakulam M. Physical vapor deposition-free scalable high-efficiency electrical contacts to MoS 2. NANOTECHNOLOGY 2023; 35:115201. [PMID: 38055966 DOI: 10.1088/1361-6528/ad12e4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 12/05/2023] [Indexed: 12/08/2023]
Abstract
Fermi-level pinning caused by the kinetic damage during metallization has been recognized as one of the major reasons for the non-ideal behavior of electrical contacts, forbidding reaching the Schottky-Mott limit. In this manuscript, we present a scalable technique wherein Indium, a low-work-function metal, is diffused to contact a few-layered MoS2flake. The technique exploits a smooth outflow of Indium over gold electrodes to make edge contacts to pre-transferred MoS2flakes. We compare the performance of three pairs of contacts made onto the same MoS2flake, the bottom-gold, top-gold, and Indium contacts, and find that the Indium contacts are superior to other contacts. The Indium contacts maintain linearI-Vcharacteristics down to cryogenic temperatures with an extracted Schottky barrier height of ∼2.1 meV. First-principle calculations show the induced in-gap states close to the Fermi level, and the damage-free contact interface could be the reason for the nearly Ohmic behavior of the Indium/MoS2interface.
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Affiliation(s)
- Anusha Shanmugam
- Indian Institute of Science Education & Research Thiruvananthapuram, Kerala 695551, India
| | | | | | - Madhu Thalakulam
- Indian Institute of Science Education & Research Thiruvananthapuram, Kerala 695551, India
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4
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Shafi AM, Uddin MG, Cui X, Ali F, Ahmed F, Radwan M, Das S, Mehmood N, Sun Z, Lipsanen H. Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field-Effect Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303437. [PMID: 37551999 PMCID: PMC10582429 DOI: 10.1002/advs.202303437] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 07/20/2023] [Indexed: 08/09/2023]
Abstract
Molybdenum ditelluride (MoTe2 ) exhibits immense potential in post-silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe2 allows easy phase modulation and efficient carrier type control in electrical transport. However, its unstable nature and low-carrier mobility limit practical implementation in devices. Here, a deterministic method is proposed to improve the performance of MoTe2 devices by inducing local tensile strain through substrate engineering and encapsulation processes. The approach involves creating hole arrays in the substrate and using atomic layer deposition grown Al2 O3 as an additional back-gate dielectric layer on SiO2 . The MoTe2 channel is passivated with a thick layer of Al2 O3 post-fabrication. This structure significantly improves hole and electron mobilities in MoTe2 field-effect transistors (FETs), approaching theoretical limits. Hole mobility up to 130 cm-2 V-1 s-1 and electron mobility up to 160 cm-2 V-1 s-1 are achieved. Introducing local tensile strain through the hole array enhances electron mobility by up to 6 times compared to the unstrained devices. Remarkably, the devices exhibit metal-insulator transition in MoTe2 FETs, with a well-defined critical point. This study presents a novel technique to enhance carrier mobility in MoTe2 FETs, offering promising prospects for improving 2D material performance in electronic applications.
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Affiliation(s)
- Abde Mayeen Shafi
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Md Gius Uddin
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Xiaoqi Cui
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Fida Ali
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Faisal Ahmed
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Mohamed Radwan
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Susobhan Das
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Naveed Mehmood
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
| | - Zhipei Sun
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
- QTF Centre of ExcellenceDepartment of Applied PhysicsAalto UniversityAaltoFI‐00076Finland
| | - Harri Lipsanen
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3FI‐02150Finland
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5
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Sun H, Wang L, Li Z, Yan X, Zhang X, Guo J, Liu P. Strain engineering on electronic structure, effective mass and charge carrier mobility in monolayer YBr 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:015501. [PMID: 37714188 DOI: 10.1088/1361-648x/acfa56] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Accepted: 09/15/2023] [Indexed: 09/17/2023]
Abstract
In recent years, two-dimensional materials have significant prospects for applications in nanoelectronic devices due to their unique physical properties. In this paper, the strain effect on the electronic structure, effective mass, and charge carrier mobility of monolayer yttrium bromide (YBr3) is systematically investigated using first-principles calculation based on density functional theory. It is found that the monolayer YBr3undergoes energy band gap reduction under the increasing compressive strain. The effective mass and charge carrier mobility can be effectively tuned by the applied compressive strain. Under the uniaxial compressive strain along the zigzag direction, the hole effective mass in the zigzag direction (mao1_h) can decrease from 1.64m0to 0.45m0. In addition, when the uniaxial compressive strain is applied, the electron and hole mobility can up to ∼103cm2V-1s-1. The present investigations emphasize that monolayer YBr3is expected to be a candidate material for the preparation of new high-performance nanoelectronic devices by strain engineering.
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Affiliation(s)
- Huaizheng Sun
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, People's Republic of China
| | - Linxia Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, People's Republic of China
| | - Zhixiang Li
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, People's Republic of China
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, People's Republic of China
| | - Xin Zhang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, People's Republic of China
| | - Jianxin Guo
- Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China
| | - Pan Liu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, People's Republic of China
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6
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Ren H, Xiang G. Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2378. [PMID: 37630963 PMCID: PMC10459406 DOI: 10.3390/nano13162378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 08/09/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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7
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Gao X, Fu S, Fang T, Yu X, Wang H, Ji Q, Kong J, Wang X, Liu J. Synergistic Photon Management and Strain-Induced Band Gap Engineering of Two-Dimensional MoS 2 Using Semimetal Composite Nanostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23564-23572. [PMID: 37130097 DOI: 10.1021/acsami.2c23163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
2D MoS2 attracts increasing attention for its application in flexible electronics and photonic devices. For 2D material optoelectronic devices, the light absorption of the molecularly thin 2D absorber would be one of the key limiting factors in device efficiency, and conventional photon management techniques are not necessarily compatible with them. In this study, we show two semimetal composite nanostructures deposited on 2D MoS2 for synergistic photon management and strain-induced band gap engineering: (1) the pseudo-periodic Sn nanodots, (2) the conductive SnOx (x < 1) core-shell nanoneedle structures. Without sophisticated nanolithography, both nanostructures are self-assembled from physical vapor deposition. Optical absorption enhancement spans from the visible to the near-infrared regime. 2D MoS2 achieves >8× optical absorption enhancement at λ = 700-940 nm and 3-4× at λ = 500-660 nm under Sn nanodots, and 20-30× at λ = 700-900 nm under SnOx (x < 1) nanoneedles. The enhanced absorption in MoS2 results from strong near-field enhancement and reduced MoS2 band gap due to the tensile strain induced by the Sn nanostructures, as confirmed by Raman and photoluminescence spectroscopy. Especially, we demonstrate that up to 3.5% biaxial tensile strain is introduced to 2D MoS2 using conductive nanoneedle-structured SnOx (x < 1), which reduces the band gap by ∼0.35 eV to further enhance light absorption at longer wavelengths. To the best of our knowledge, this is the first demonstration of a synergistic triple-functional photon management, stressor, and conductive electrode layer on 2D MoS2. Such synergistic photon management and band gap engineering approach for extended spectral response can be further applied to other 2D materials for future 2D photonic devices.
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Affiliation(s)
- Xiaoxue Gao
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Sidan Fu
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Tao Fang
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Xiaobai Yu
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Qingqing Ji
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Xiaoxin Wang
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
| | - Jifeng Liu
- Thayer School of Engineering, Dartmouth College, 15 Thayer Drive, Hanover, New Hampshire 03755, United States
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8
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Lee L, Chiang CH, Shen YC, Wu SC, Shih YC, Yang TY, Hsu YC, Cyu RH, Yu YJ, Hsieh SH, Chen CH, Lebedev M, Chueh YL. Rational Design on Polymorphous Phase Switching in Molybdenum Diselenide-Based Memristor Assisted by All-Solid-State Reversible Intercalation toward Neuromorphic Application. ACS NANO 2023; 17:84-93. [PMID: 36575141 DOI: 10.1021/acsnano.2c04356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In this work, a low-power memristor based on vertically stacked two-dimensional (2D) layered materials, achieved by plasma-assisted vapor reaction, as the switching material, with which the copper and gold metals as electrodes featured by reversible polymorphous phase changes from a conducting 1T-phase to a semiconducting 2H-one once copper cations interacted between vertical lamellar layers and vice versa, was demonstrated. Here, molybdenum diselenide was chosen as the switching material, and the reversible polymorphous phase changes activated by the intercalation of Cu cations were confirmed by pseudo-operando Raman scattering, transmission electron microscopy, and scanning photoelectron microscopy under high and low resistance states, respectively. The switching can be activated at about ±1 V with critical currents less than 10 μA with an on/off ratio approaching 100 after 100 cycles and low power consumption of ∼0.1 microwatt as well as linear weight updates controlled by the amount of intercalation. The work provides alternative feasibility of reversible and all-solid-state metal interactions, which benefits monolithic integrations of 2D materials into operative electronic circuits.
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Affiliation(s)
- Ling Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chun-Hsiu Chiang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ying-Chun Shen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shu-Chi Wu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chuan Shih
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chieh Hsu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ruei-Hong Cyu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Jen Yu
- Instrument Center, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shang-Hsien Hsieh
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Mikhail Lebedev
- Laboratory of Functional Films and Coatings, Nikolaev Institute of inorganic chemistry SB RAS, Lavrent'ev ave. 3, Novosibirsk 630090, Russia
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
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9
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Datye IM, Daus A, Grady RW, Brenner K, Vaziri S, Pop E. Strain-Enhanced Mobility of Monolayer MoS 2. NANO LETTERS 2022; 22:8052-8059. [PMID: 36198070 DOI: 10.1021/acs.nanolett.2c01707] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g., by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of the strain. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors.
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Affiliation(s)
- Isha M Datye
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Alwin Daus
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Ryan W Grady
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Kevin Brenner
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sam Vaziri
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
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10
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Huang Z, Lu N, Wang Z, Xu S, Guan J, Hu Y. Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors. NANO LETTERS 2022; 22:7734-7741. [PMID: 35951414 DOI: 10.1021/acs.nanolett.2c01559] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Strain engineering of 2D materials is capable of tuning the electrical and optical properties of the materials without introducing additional atoms. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. Locally nonuniform strains are introduced through the cooperative deformation of materials and metal@metal oxide nanoparticles through cold laser shock. The tensile strain of MoS2 changes and the band gap decreases after laser shock. The mechanism of the ultrafast straining is investigated by MD simulations. MoS2 FETs were fabricated, and the field-effect mobility of devices could be increased from 1.9 to 44.5 cm2 V-1 s-1 by adjusting the strain level of MoS2. This is currently the maximum value of MoS2 FETs grown by CVD with SiO2 as the dielectric. As a large-scale and ultrafast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D material strain, which will help to promote the manufacturing of 2D nanoelectronic devices.
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Affiliation(s)
- Zheng Huang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, People's Republic of China
| | - Nan Lu
- School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Zifeng Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, People's Republic of China
| | - Shuoheng Xu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jie Guan
- School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Yaowu Hu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, People's Republic of China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, People's Republic of China
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11
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Piezoresistive Memories Based on Two-Dimensional Nano-Scale Electromechanical Systems. CRYSTALS 2022. [DOI: 10.3390/cryst12070968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
In this work we present piezoresistive memory-bits based on two-dimensional nano-scale electro-mechanical systems. We demonstrate it is possible to achieve different electrical responses by fine control of micro-structural asymmetries and that information can be encoded in the geometrical configuration of the device and read as in classical ReRAM memories by measuring the current flowing across it. Based on the potential energy landscape of the device, we estimate the energy cost to operate the proposed memories. The estimated energy requirements for a single bit compete with existing technologies.
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12
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Qian C, Villafañe V, Soubelet P, Hötger A, Taniguchi T, Watanabe K, Wilson NP, Stier AV, Holleitner AW, Finley JJ. Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS_{2} Monolayers. PHYSICAL REVIEW LETTERS 2022; 128:237403. [PMID: 35749182 DOI: 10.1103/physrevlett.128.237403] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Revised: 02/11/2022] [Accepted: 05/24/2022] [Indexed: 06/15/2023]
Abstract
Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of "free" trions in pristine hBN/MoS_{2}/hBN heterostructures coupled to single mode (Q>10^{4}) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS_{2} monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass (c.m.) wave function is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way toward harnessing novel light-matter interaction regimes for applications in quantum photonics.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander Hötger
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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13
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Strain-Modulated Magnetism in MoS2. NANOMATERIALS 2022; 12:nano12111929. [PMID: 35683784 PMCID: PMC9182138 DOI: 10.3390/nano12111929] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Revised: 05/26/2022] [Accepted: 06/01/2022] [Indexed: 11/16/2022]
Abstract
Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.
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14
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Liu X, Choi MS, Hwang E, Yoo WJ, Sun J. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108425. [PMID: 34913205 DOI: 10.1002/adma.202108425] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Revised: 11/29/2021] [Indexed: 06/14/2023]
Abstract
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out-of-plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.
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Affiliation(s)
- Xiaochi Liu
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Min Sup Choi
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, China
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15
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Zhang L, Li X, Chen K, Zhang Z, Li Y, Lu Y, Chen X, Yang D, Shan C. Revealing the Anisotropic Structural and Electrical Stabilities of 2D SnSe under Harsh Environments: Alkaline Environment and Mechanical Strain. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9824-9832. [PMID: 35143168 DOI: 10.1021/acsami.1c22963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
As a promising thermoelectric and semiconducting material, the stability of two-dimensional tin selenide (SnSe) under harsh environments is significant for its practical applications. Here, focusing on the key procedures in the device fabrication process, we report the anisotropic structural and electrical stabilities of SnSe under an alkaline environment and mechanical strain. Due to the anisotropic mechanical properties, the SnSe flakes can naturally form long-straight {011} edge planes during the mechanical exfoliation process. Such a cleavage tendency provides an effective crystal orientation identification method to uncover the orientation-dependent properties. We find that the single-crystalline SnSe flakes experience an anisotropic degradation process with the preferable {011} dissolution planes in the alkaline environment and can be gradually transformed to be polycrystalline consisting of SnSe2, Sn, and Se nanocrystals. SnSe flakes present an anisotropic electromechanical response with a gauge factor value that reaches ∼-460 under the uniaxial strain along the ⟨011⟩ directions. Our revealed structural and electrical stability of SnSe under harsh environments can provide guidance for the device design, fabrication, and performance evaluation.
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Affiliation(s)
- Leilei Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xing Li
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Kaijian Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Zhenfeng Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yizhe Li
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Yacong Lu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Xuexia Chen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Dongwen Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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16
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Falina S, Syamsul M, Rhaffor NA, Sal Hamid S, Mohamed Zain KA, Abd Manaf A, Kawarada H. Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review. BIOSENSORS 2021; 11:478. [PMID: 34940235 PMCID: PMC8699440 DOI: 10.3390/bios11120478] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Revised: 11/13/2021] [Accepted: 11/17/2021] [Indexed: 05/16/2023]
Abstract
Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs' electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.
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Affiliation(s)
- Shaili Falina
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan;
| | - Mohd Syamsul
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan;
- Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
| | - Nuha Abd Rhaffor
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Sofiyah Sal Hamid
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Khairu Anuar Mohamed Zain
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Asrulnizam Abd Manaf
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Hiroshi Kawarada
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan;
- The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan
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17
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Xu M, Gao J, Song J, Wang H, Zheng L, Wei Y, He Y, Wang X, Huang W. Programmable patterned MoS 2 film by direct laser writing for health-related signals monitoring. iScience 2021; 24:103313. [PMID: 34755102 PMCID: PMC8564106 DOI: 10.1016/j.isci.2021.103313] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2021] [Revised: 09/30/2021] [Accepted: 10/15/2021] [Indexed: 12/02/2022] Open
Abstract
The two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising flexible electronic materials for strategic flexible information devices. Large-area and high-quality patterned materials were usually required by flexible electronics due to the limitation from the process of manufacturing and integration. However, the synthesis of large-area patterned 2D TMDs with high quality is difficult. Here, an efficient and powerful pulsed laser has been developed to synthesize wafer-scale MoS2. The flexible strain sensor was fabricated using MoS2 and showed high performance of low detection limit (0.09%), high gauge factor (1,118), and high stability (1,000 cycles). Besides, we demonstrated its applications in real-time monitoring of health-related physiological signals such as radial artery pressure, respiratory rate, and vocal cord vibration. Our findings suggest that the laser-assisted method is effective and capable of synthesizing wafer-scale 2D TMDs, which opens new opportunities for the next flexible electronic devices and wearable health monitoring. Wafer-scale patterned MoS2 film has been synthesized by pulsed laser The MoS2 film strain sensor shows low limit detection, high GF, and stability The healthy-related singles have been monitored by the MoS2 film strain sensor
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Affiliation(s)
- Manzhang Xu
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Jiuwei Gao
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China
| | - Juncai Song
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China
| | - Hanxin Wang
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Yuan Wei
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics and Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 71002, P. R. China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, P. R. China.,State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, P. R. China.,Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211800, P. R. China
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18
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Bao H, Miao Y, Ma F. Effect of point defects and nanopores on the fracture behaviors in single-layer MoS2 nanosheets. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac3635] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
Abstract
Point defects and nanopores are inevitable and particularly noticeable in single-layer (SL) MoS2. Molecular dynamics (MD) simulations have been done to comprehensively study the influences of point defects and nanopores on tensile deformation behaviors of SLMoS2 nanosheets, and the dependences of fracture properties on defect type and concentration, pore size, temperature and strain rate are discussed. The formation energy of S vacancy (VS) is the lowest one, but that of VMoS6 is the highest one, corresponding to the highest and lowest fracture stress, respectively. The local stress concentration around point defects and nanopores might lead to the early bond breaking and subsequent nucleation of cracks and brittle fracture upon tensile loading. A modified Griffith criterion is proposed to describe the defect concentration and pore size dependent fracture stress and strain. These findings provide us an important guideline for the structural design of 2D materials in future applications.
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19
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20
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Vaknin Y, Dagan R, Rosenwaks Y. Schottky Barrier Height and Image Force Lowering in Monolayer MoS 2 Field Effect Transistors. NANOMATERIALS 2020; 10:nano10122346. [PMID: 33255993 PMCID: PMC7761329 DOI: 10.3390/nano10122346] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2020] [Revised: 11/18/2020] [Accepted: 11/23/2020] [Indexed: 11/16/2022]
Abstract
Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5-1 V We also show that increase of the gate voltage induces additional barrier lowering.
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21
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Zhao Q, Wang T, Frisenda R, Castellanos‐Gomez A. Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001645. [PMID: 33101864 PMCID: PMC7578899 DOI: 10.1002/advs.202001645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 06/02/2020] [Indexed: 05/05/2023]
Abstract
The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The bandgap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ≈200 meV %-1. The effect of biaxial strain on the electrical properties of the InSe devices is further characterized. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ≈450-1000, ≈5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe bandgap also translates in a strain-induced redshift of the spectral response of the InSe photodetectors with ΔE cut-off ≈173 meV at a rate of ≈360 meV %-1 of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.
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Affiliation(s)
- Qinghua Zhao
- State Key Laboratory of Solidification ProcessingNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Key Laboratory of Radiation Detection Materials and DevicesMinistry of Industry and Information TechnologyXi'an710072P. R. China
- Materials Science FactoryInstituto de Ciencia de Materiales de Madrid (ICMM‐CSIC)MadridE‐28049Spain
| | - Tao Wang
- State Key Laboratory of Solidification ProcessingNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Key Laboratory of Radiation Detection Materials and DevicesMinistry of Industry and Information TechnologyXi'an710072P. R. China
| | - Riccardo Frisenda
- Materials Science FactoryInstituto de Ciencia de Materiales de Madrid (ICMM‐CSIC)MadridE‐28049Spain
| | - Andres Castellanos‐Gomez
- Materials Science FactoryInstituto de Ciencia de Materiales de Madrid (ICMM‐CSIC)MadridE‐28049Spain
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