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Li S, Wang X, Yang Z, Zhang L, Teo SL, Lin M, He R, Wang N, Song P, Tian W, Loh XJ, Zhu Q, Sun B, Wang XR. Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS) 1.17(NbS 2) 3. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11043-11049. [PMID: 38349718 DOI: 10.1021/acsami.3c18319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)1.17(NbS2)3. While the THE is prohibited in individual NbS2 and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.
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Affiliation(s)
- Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xueyan Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Zherui Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Lijuan Zhang
- Tsinghua-Berkeley Shenzhen Institute and Shenzhen Geim Graphene Center, Tsinghua University, Shenzhen 518055, Guangdong, China
| | - Siew Lang Teo
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ming Lin
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ri He
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Peng Song
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| | - Wanghao Tian
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| | - Xian Jun Loh
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Qiang Zhu
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), Institute of Sustainability for Chemicals, 1 Pesek Road, Jurong Island, Singapore 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Bo Sun
- Tsinghua-Berkeley Shenzhen Institute and Shenzhen Geim Graphene Center, Tsinghua University, Shenzhen 518055, Guangdong, China
- Tsinghua Shenzhen International Graduate School, Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Institute of Materials Research, Shenzhen 518055, Guangdong, China
| | - X Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
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2
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Bai W, Li P, Ju S, Xiao C, Shi H, Wang S, Qin S, Sun Z, Xie Y. Monolayer Behavior of NbS 2 in Natural van der Waals Heterostructures. J Phys Chem Lett 2018; 9:6421-6425. [PMID: 30351949 DOI: 10.1021/acs.jpclett.8b02781] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) constitute an important family of materials with many intriguing properties and applications. The ability to achieve large-size and high-quality monolayer TMDs is the key prerequisite toward a deep understanding and practical application of TMDs in electronics and optoelectronics. Here, on the basis of high-resolution angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we find a monolayer NbS2-dominated Fermi-level feature in a misfit compound, which is a type of natural heterostructures. Considering the infrequency of the synthesis approach and electronic properties of the NbS2 monolayer, our results cannot only provide direct insight into the electronic structure of van der Waals heterostructures (VDWHs) but also shed light on the way toward rationally investigating the monolayer TMDs, which are hardly obtained and studied.
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Affiliation(s)
- Wei Bai
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
| | - Pengju Li
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
- ICQD, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic China
| | - Sailong Ju
- National Synchrotron Radiation Laboratory , University of Science and Technology of China , Hefei , Anhui 230029 , People's Republic of China
| | - Chong Xiao
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
| | - Haohao Shi
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
- ICQD, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic China
| | - Sheng Wang
- National Synchrotron Radiation Laboratory , University of Science and Technology of China , Hefei , Anhui 230029 , People's Republic of China
| | - Shengyong Qin
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
- ICQD, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory , University of Science and Technology of China , Hefei , Anhui 230029 , People's Republic of China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
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3
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Göhler F, Mitchson G, Alemayehu MB, Speck F, Wanke M, Johnson DC, Seyller T. Charge transfer in (PbSe) 1+δ (NbSe 2) 2 and (SnSe) 1+δ (NbSe 2) 2 ferecrystals investigated by photoelectron spectroscopy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:055001. [PMID: 29244027 DOI: 10.1088/1361-648x/aaa212] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Rotationally disordered, layered (PbSe)[Formula: see text](NbSe2)2 and (SnSe)[Formula: see text](NbSe2)2 ferecrystal heterostructures, consisting of stacked two-dimensional bilayers of either PbSe or SnSe alternating with two planes of NbSe2, were synthesized from modulated elemental reactants. The electronic structure of these ternary systems was investigated using x-ray photoelectron spectroscopy and compared to the binary bulk compounds PbSe, SnSe and NbSe2. The Pb and Sn core level spectra show a significant shift towards lower binding energies and the peak shape becomes asymmetric in the ferecrystals, while the electronic structure of the NbSe2 layers does not change compared to the bulk. This is interpreted in terms of an interlayer interaction in the form of a charge transfer of electrons from PbSe or SnSe into the NbSe2 layers, which is supported by valence band spectra and is consistent with prior results from transport measurements.
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Affiliation(s)
- Fabian Göhler
- Institut für Physik, Technische Universität Chemnitz, Reichenhainer Straße 70, D-09126 Chemnitz, Germany
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Merrill DR, Moore DB, Bauers SR, Falmbigl M, Johnson DC. Misfit Layer Compounds and Ferecrystals: Model Systems for Thermoelectric Nanocomposites. MATERIALS 2015; 8:2000-2029. [PMID: 28788045 PMCID: PMC5507028 DOI: 10.3390/ma8042000] [Citation(s) in RCA: 48] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2015] [Revised: 04/03/2015] [Accepted: 04/07/2015] [Indexed: 11/26/2022]
Abstract
A basic summary of thermoelectric principles is presented in a historical context, following the evolution of the field from initial discovery to modern day high-zT materials. A specific focus is placed on nanocomposite materials as a means to solve the challenges presented by the contradictory material requirements necessary for efficient thermal energy harvest. Misfit layer compounds are highlighted as an example of a highly ordered anisotropic nanocomposite system. Their layered structure provides the opportunity to use multiple constituents for improved thermoelectric performance, through both enhanced phonon scattering at interfaces and through electronic interactions between the constituents. Recently, a class of metastable, turbostratically-disordered misfit layer compounds has been synthesized using a kinetically controlled approach with low reaction temperatures. The kinetically stabilized structures can be prepared with a variety of constituent ratios and layering schemes, providing an avenue to systematically understand structure-function relationships not possible in the thermodynamic compounds. We summarize the work that has been done to date on these materials. The observed turbostratic disorder has been shown to result in extremely low cross plane thermal conductivity and in plane thermal conductivities that are also very small, suggesting the structural motif could be attractive as thermoelectric materials if the power factor could be improved. The first 10 compounds in the [(PbSe)1+δ]m(TiSe2)n family (m, n ≤ 3) are reported as a case study. As n increases, the magnitude of the Seebeck coefficient is significantly increased without a simultaneous decrease in the in-plane electrical conductivity, resulting in an improved thermoelectric power factor.
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Affiliation(s)
- Devin R Merrill
- Department of Chemistry and Materials Science Institute, University of Oregon, 1253 University of Oregon, Eugene, OR 97403, USA.
| | - Daniel B Moore
- Department of Chemistry and Materials Science Institute, University of Oregon, 1253 University of Oregon, Eugene, OR 97403, USA.
| | - Sage R Bauers
- Department of Chemistry and Materials Science Institute, University of Oregon, 1253 University of Oregon, Eugene, OR 97403, USA.
| | - Matthias Falmbigl
- Department of Chemistry and Materials Science Institute, University of Oregon, 1253 University of Oregon, Eugene, OR 97403, USA.
| | - David C Johnson
- Department of Chemistry and Materials Science Institute, University of Oregon, 1253 University of Oregon, Eugene, OR 97403, USA.
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5
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Jood P, Ohta M. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides. MATERIALS 2015; 8:1124-1149. [PMID: 28787992 PMCID: PMC5455437 DOI: 10.3390/ma8031124] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/04/2015] [Revised: 02/25/2015] [Accepted: 02/26/2015] [Indexed: 11/16/2022]
Abstract
Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.
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Affiliation(s)
- Priyanka Jood
- Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.
| | - Michihiro Ohta
- Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.
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Lorenz T, Joswig JO, Seifert G. Two-dimensional and tubular structures of misfit compounds: Structural and electronic properties. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2014; 5:2171-8. [PMID: 25551045 PMCID: PMC4273210 DOI: 10.3762/bjnano.5.226] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2014] [Accepted: 10/30/2014] [Indexed: 05/28/2023]
Abstract
Misfit layer compounds are structures that consist of two sublattices differing in at least one of their lattice constants. The two different layers are stacked either an alternating or in a more complex series resulting in mono- or multi-layer misfit compounds. To date, planar and bent misfit structures, such as tubes, scrolls or nanoparticles, have been synthesized and interesting magnetic and physical properties have been observed as a result of their special structures. Based on these observations, we present an overview of such misfit systems and summarize and discuss their electronic structure as well as the interlayer bonding behaviour, which is not completely understood yet. Furthermore, a more detailed insight into the SnS-SnS2 system is given, which was the first tubular misfit compound that has been synthesized and extensively investigated.
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Affiliation(s)
- Tommy Lorenz
- Theoretische Chemie, Technische Universität Dresden, 01069 Dresden, Germany
- Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, P.O. Box 51 01 19, 01314 Dresden, Germany
| | - Jan-Ole Joswig
- Theoretische Chemie, Technische Universität Dresden, 01069 Dresden, Germany
| | - Gotthard Seifert
- Theoretische Chemie, Technische Universität Dresden, 01069 Dresden, Germany
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7
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Panchakarla LS, Radovsky G, Houben L, Popovitz-Biro R, Dunin-Borkowski RE, Tenne R. Nanotubes from Misfit Layered Compounds: A New Family of Materials with Low Dimensionality. J Phys Chem Lett 2014; 5:3724-36. [PMID: 26278742 DOI: 10.1021/jz5016845] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Nanotubes that are formed from layered materials have emerged to be exciting one-dimensional materials in the last two decades due to their remarkable structures and properties. Misfit layered compounds (MLC) can be produced from alternating assemblies of two different molecular slabs with different periodicities with the general formula [(MX)1+x]m[TX2]n (or more simply MS-TS2), where M is Sn, Pb, Bi, Sb, rare earths, T is Sn, Nb, Ta, Ti, V, Cr, and so on, and X is S, Se. The presence of misfit stresses between adjacent layers in MLC provides a driving force for curling of the layers that acts in addition to the elimination of dangling bonds. The combination of these two independent forces leads to the synthesis of misfit layered nanotubes, which are newcomers to the broad field of one-dimensional nanostructures and nanotubes. The synthesis, characterization, and microscopic details of misfit layered nanotubes are discussed, and directions for future research are presented.
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Affiliation(s)
| | | | - Lothar Houben
- ‡Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich, Germany
| | | | - Rafal E Dunin-Borkowski
- ‡Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich, Germany
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8
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Xu WB, Huang BJ, Li P, Li F, Zhang CW, Wang PJ. The electronic structure and optical properties of Mn and B, C, N co-doped MoS2 monolayers. NANOSCALE RESEARCH LETTERS 2014; 9:554. [PMID: 25317103 PMCID: PMC4194453 DOI: 10.1186/1556-276x-9-554] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2014] [Accepted: 09/09/2014] [Indexed: 05/31/2023]
Abstract
The electronic structure and optical properties of Mn and B, C, N co-doped molybdenum disulfide (MoS2) monolayers have been investigated through first-principles calculations. It is shown that the MoS2 monolayer reflects magnetism with a magnetic moment of 0.87 μB when co-doped with Mn-C. However, the systems co-doped with Mn-B and Mn-N atoms exhibit semiconducting behavior and their energy bandgaps are 1.03 and 0.81 eV, respectively. The bandgaps of the co-doped systems are smaller than those of the corresponding pristine forms, due to effective charge compensation between Mn and B (N) atoms. The optical properties of Mn-B (C, N) co-doped systems all reflect the redshift phenomenon. The absorption edge of the pure molybdenum disulfide monolayer is 0.8 eV, while the absorption edges of the Mn-B, Mn-C, and Mn-N co-doped systems become 0.45, 0.5, and 0 eV, respectively. As a potential material, MoS2 is widely used in many fields such as the production of optoelectronic devices, military devices, and civil devices.
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Affiliation(s)
- Wei-bin Xu
- School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People’s Republic of China
| | - Bao-jun Huang
- School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People’s Republic of China
| | - Ping Li
- School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People’s Republic of China
| | - Feng Li
- School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People’s Republic of China
| | - Chang-wen Zhang
- School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People’s Republic of China
| | - Pei-ji Wang
- School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People’s Republic of China
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Kalläne M, Rossnagel K, Marczynski-Bühlow M, Kipp L, Starnberg HI, Stoltz SE. Stabilization of the misfit layer compound (PbS)1.13TaS2 by metal cross substitution. PHYSICAL REVIEW LETTERS 2008; 100:065502. [PMID: 18352489 DOI: 10.1103/physrevlett.100.065502] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2007] [Indexed: 05/26/2023]
Abstract
Photoemission microspectroscopy on the layered misfit compound (PbS)1.13TaS2 provides direct evidence for Ta substitution into PbS layers as well as for Pb substitution into TaS2 layers. This metal cross substitution alters the charge balance between alternating layers and can explain the remarkable stability of (PbS)1.13TaS2 and, possibly, of analogous misfit compounds. It is suggested that even formally stoichiometric misfit compounds can be stabilized by this mechanism.
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Affiliation(s)
- M Kalläne
- Institute for Experimental and Applied Physics, University of Kiel, D-24098 Kiel, Germany
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Meerschaut A, Moëlo Y, Cario L, Lafond A, Deudon C. Charge Transfer in Misfit Layer Chalcogenides, [(MX)n]1+x(TX2)m: a Key for Understanding their Stability and Properties. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/10587250008026108] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- A. Meerschaut
- a Institut des Matériaux Jean Rouxel, UMR-CNRS 6502, Université de Nantes, Lab. de Chimie des Solides , 2 rue de la Houssiniére, 44322 , Nantes , France
| | - Y. Moëlo
- a Institut des Matériaux Jean Rouxel, UMR-CNRS 6502, Université de Nantes, Lab. de Chimie des Solides , 2 rue de la Houssiniére, 44322 , Nantes , France
| | - L. Cario
- a Institut des Matériaux Jean Rouxel, UMR-CNRS 6502, Université de Nantes, Lab. de Chimie des Solides , 2 rue de la Houssiniére, 44322 , Nantes , France
| | - A. Lafond
- a Institut des Matériaux Jean Rouxel, UMR-CNRS 6502, Université de Nantes, Lab. de Chimie des Solides , 2 rue de la Houssiniére, 44322 , Nantes , France
| | - C. Deudon
- a Institut des Matériaux Jean Rouxel, UMR-CNRS 6502, Université de Nantes, Lab. de Chimie des Solides , 2 rue de la Houssiniére, 44322 , Nantes , France
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11
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Ohno Y, Shimokawa S. Preparation and characterization of intercalated misfit-layer compounds and natural superlattices. J SOLID STATE CHEM 2004. [DOI: 10.1016/j.jssc.2004.04.007] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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12
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Quantification of the Interlayer Charge Transfer, via Bond Valence Calculation, in 2D Misfit Compounds: The Case of (Pb(Mn, Nb)0.5S1.5)1.15NbS2. J SOLID STATE CHEM 2000. [DOI: 10.1006/jssc.2000.8874] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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13
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Ohno Y. Crystal growth and characterization of Cu-intercalated misfit-layer compounds. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11693-11700. [PMID: 9984959 DOI: 10.1103/physrevb.54.11693] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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