Electric field switching of the magnetic anisotropy of a ferromagnetic layer exchange coupled to the multiferroic compound BiFeO3

Texture Regulation of Metal-Organic Frameworks, Microwave Absorption Mechanism-Oriented Structural Optimization and Design Perspectives

Texture regulation of metal-organic frameworks (MOFs) is essential for controlling their electromagnetic wave (EMW) absorption properties. This review systematically summarizes the recent advancements in texture regulation strategies for MOFs, including etching and exchange of central ions, etching and exchange of ligands, chemically induced self-assembly, and MOF-on-MOF heterostructure design. Additionally, the EMW absorption mechanisms in approaches based on structure-function dependencies, including nano-micro topological engineering, defect engineering, interface engineering, and hybrid engineering, are comprehensively explored. Finally, current challenges and future research orientation are proposed. This review aims to provide new perspectives for designing MOF-derived EMW-absorption materials to achieve essential breakthroughs in mechanistic investigations in this promising field.

Structural and Magnetic Phase Transitions in BiFe1 - xMnxO3 Solid Solution Driven by Temperature

The crystal structure and magnetic state of the (1 − x)BiFeO3-(x)BiMnO3 solid solution has been analyzed by X-ray diffraction using lab-based and synchrotron radiation facilities, magnetization measurements, differential thermal analysis, and differential scanning calorimetry. Dopant concentration increases lead to the room-temperature structural transitions from the polar-active rhombohedral phase to the antipolar orthorhombic phase, and then to the monoclinic phase accompanied by the formation of two-phase regions consisting of the adjacent structural phases in the concentration ranges 0.25 < x1 < 0.30 and 0.50 ≤ x2 < 0.65, respectively. The accompanied changes in the magnetic structure refer to the magnetic transitions from the modulated antiferromagnetic structure to the non-colinear antiferromagnetic structure, and then to the orbitally ordered ferromagnetic structure. The compounds with a two-phase structural state at room temperature are characterized by irreversible temperature-driven structural transitions, which favor the stabilization of high-temperature structural phases. The magnetic structure of the compounds also exhibits an irreversible temperature-induced transition, resulting in an increase of the contribution from the magnetic phase associated with the high-temperature structural phase. The relationship between the structural parameters and the magnetic state of the compounds with a metastable structure is studied and discussed depending on the chemical composition and heating prehistory.

Long decay length of magnon-polarons in BiFeO3/La0.67Sr0.33MnO3 heterostructures

Magnons can transfer information in metals and insulators without Joule heating, and therefore are promising for low-power computation. The on-chip magnonics however suffers from high losses due to limited magnon decay length. In metallic thin films, it is typically on the tens of micrometre length scale. Here, we demonstrate an ultra-long magnon decay length of up to one millimetre in multiferroic/ferromagnetic BiFeO₃(BFO)/La_0.67Sr_0.33MnO₃(LSMO) heterostructures at room temperature. This decay length is attributed to a magnon-phonon hybridization and is more than two orders of magnitude longer than that of bare metallic LSMO. The long-distance modes have high group velocities of 2.5 km s^-1 as detected by time-resolved Brillouin light scattering. Numerical simulations suggest that magnetoelastic coupling via the BFO/LSMO interface hybridizes phonons in BFO with magnons in LSMO to form magnon-polarons. Our results provide a solution to the long-standing issue on magnon decay lengths in metallic magnets and advance the bourgeoning field of hybrid magnonics.

Multiferroic heterostructures for spintronics

For next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.

Investigation of new magnetoelastic and magnetic transitions accompanied with magnetoelectric coupling in [Formula: see text] multiferroic

A new multiferroic solid solution [Formula: see text] has been developed and characterized for structure, phase transition, magnetoelectric and magnetoelastic coupling. Temperature dependent measurement of dc-magnetization [Formula: see text] on [Formula: see text] ceramic shows two magnetic transitions one around [Formula: see text]42 K and the second at [Formula: see text]130 K. The real part of dielectric permittivity exhibits step like change at the magnetic anomaly temperature ([Formula: see text]130 K) which indicates the presence of magnetoelectric coupling. The change in the value of dielectric permittivity on the application of magnetic field confirms the presence of magnetoelectric coupling in [Formula: see text] ceramic. The room temperature polarization (P)-electric field (E) hysteresis loop measurement shows week ferroelectric nature of sample while the magnetization (M) versus magnetic field (H) measurement suggest weakly ferromagnetic character. The ferroelectric nature of sample was further confirmed by calculating remanent polarization using PUND measurement. The Rietveld structural analysis of low temperature x-ray powder diffraction data does not reveal any crystallographic phase transition in terms of peak splitting or new reflections. However, temperature dependence of lattice parameters, tetragonality, unit cell volume, [Formula: see text] octahedral tilt angle ([Formula: see text]), [Formula: see text] bond length and [Formula: see text] bond angles reveal discontinuous changes at both the magnetic transitions observed in temperature dependence of magnetization. This confirms that both the magnetic anomalies (around [Formula: see text]42 K and [Formula: see text]130 K) exhibit magnetoelastic coupling accompanied with isostructural transitions.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.

Polarization Control of the Interface Ferromagnetic to Antiferromagnetic Phase Transition in Co/Pb(Zr,Ti)O3

Based on first-principles calculations, we predict the polarization control of the interfacial magnetic phase and a giant electronically driven magnetoelectric coupling (MEC) in Co/PbZr_0.25Ti_0.75O₃ (PZT)(001). The effect of Co oxidation at the interface shared with (Zr,Ti)O₂-terminated PZT is evidenced. The magnetic phase of the oxidized Co interface layer is electrically switched from the ferromagnetic to the antiferromagnetic state by reversing the PZT polarization from upward to downward, respectively. A comparative study between oxidized and unoxidized Co/PZT interfaces shows that in oxidized Co/PZT bilayers, the variation of the interface spin moment upon polarization reversal exceeds that of unoxidized Co/PZT bilayers by about 1 order of magnitude. We define a surface MEC constant α_S taking into account the polarization dependence of both the spin and orbital moments. In unoxidized Co/PZT bilayers, we obtain α_S ≈ 2 × 10^-10 G cm² V^-1, while a giant surface coupling α_S ≈ 12 × 10^-10 G cm² V^-1 is found in the case of oxidized Co/PZT. We demonstrate that the polarization control of the magnetocrystalline anisotropy via spin-orbit coupling is not only effective at the interface but it extends to the Co film despite the interface origin of the MEC. This study shows that tailoring the nature of atomic bonding and electron occupancies allows for improving the performance of functional interfaces, enabling an efficient electric field control of spin-orbit interactions. Moreover, the nonlocal character of this effect holds promising perspectives for the application of electronically driven interface MEC in spin-orbitronic devices.

A First-Principles Study on the Multiferroic Property of Two-Dimensional BaTiO₃ (001) Ultrathin Film with Surface Ba Vacancy

In this work, the multiferroic property of Ba-deficient BaTiO₃ (001) ultrathin film is studied employing the first-principles approach. The BaTiO₃ (001) ultrathin film is more energetically stable and behaves as a semiconductor relative to the (111) and (101) configurations, confirmed from the surface grand potential and electronic density of states. The electronic structures show that the O vacancy can switch the (001) film from a semi-conductor into a metal, while the Ba defect has a slight influence on the band gap, at a concentration of ~2.13%. In Ba-deficient (001) film, the spontaneous polarization pattern is changed and a spontaneous polarization parallel to the surface is observed. Furthermore, a magnetic moment is induced, and it is found to be originated from the O atoms in the supercell. Our results suggest that a strong magnetoelectric coupling occurs because the magnetic moment exhibits a 43.66% drop when the spontaneous polarization increases from 12.84 µC/cm² to 23.99 µC/cm² in the deficient BaTiO₃ with m = 2 under the bi-axial compress stress field.

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/BiFeO3 on SrTiO3

Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO₃ films grown on DyScO₃, a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO₃. Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO₃ (BFO) (001) thin film heterostructures fabricated on (001) SrTiO₃ (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO₃ (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (H_C) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.

Permanent ferroelectric retention of BiFeO3 mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.

Ferroelectric reliability must be solved prior to practical non-volatile electronic devices based on magnetoelectric multiferroics. Here, Hsieh et al. report a long lasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal.

Deterministic Switching in Bismuth Ferrite Nanoislands

We report deterministic selection of polarization variant in bismuth BiFeO3 nanoislands via a two-step scanning probe microscopy procedure. The polarization orientation in a nanoisland is toggled to the desired variant after a reset operation by scanning a conductive atomic force probe in contact over the surface while a bias is applied. The final polarization variant is determined by the direction of the inhomogeneous in-plane trailing field associated with the moving probe tip. This work provides the framework for better control of switching in rhombohedral ferroelectrics and for a deeper understanding of exchange coupling in multiferroic nanoscale heterostructures toward the realization of magnetoelectric devices.

Tuning the magnetic properties of self-assembled BiFeO3-CoFe2O4 heteroepitaxy by magneto-structural coupling

Magnetic and multiferroic nanocomposites with two distinct phases have been a topic of intense research for their profound potential applications in the field of spintronics. In addition to growing high-quality phase separated heteroepitaxial nanocomposites, the strain engineering that is conducive to enhance the tunability of material properties, in general, and the magnetic properties, in particular, is of utmost importance in exploring new possibilities. Here, we investigated the magneto-structural coupling between antiferromagnetic BiFeO3 (BFO) and ferrimagnetic CoFe2O4 (CFO) in self-assembled vertically aligned nanocomposites grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates. We found that BFO exhibits tetragonal (T) and rhombohedral (R) structures as the stable phases and CFO has high magnetocrystalline anisotropy even in the form of nanocomposites. The temperature and magnetic field dependent magnetizations of T_BFO-CFO/LAO and R_BFO-CFO/STO nanocomposites primarily demonstrate the magnetoelastic coupling between these variants.

Strain-induced magnetic domain wall control by voltage in hybrid piezoelectric BaTiO3 ferrimagnetic TbFe structures

This paper reports on the voltage dependence of the magnetization reversal of a thin amorphous ferromagnetic TbFe film grown on a ferroelectric and piezoelectric BaTiO₃ single crystal. Magneto-optical measurements, at macroscopic scale or in a microscope, demonstrate how the ferroelectric BaTiO₃ polarisation history influences the properties of the perpendicularly magnetized TbFe film. Unpolarised and twinned regions are obtained when the sample is zero voltage cooled whereas flat and saturated regions are obtained when the sample is voltage cooled through the ferroelectric ordering temperature of the BaTiO₃ crystal, as supported by atomic force microscopy experiments. The two steps involved in the TbFe magnetization reversal, namely nucleation and propagation of magnetic domain walls, depend on the polarisation history. Nucleation is associated to coupling through strains with the piezoelectric BaTiO3 crystal and propagation to pinning with the ferroelastic surface patterns visible in the BaTiO3 topography.

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

Polarization-Mediated Thermal Stability of Metal/Oxide Heterointerface

A polarization-mediated heterointerface is designed to research the thermal stability of magnetic metal/oxide interfaces. Using polarization engineering, the thermal stability of the interface between BiFeO3 and CoFeB can be improved by about 100°C. This finding provides new insight into the chemistry of the metal/oxide heterointerface.

Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Voltage controlled 180° magnetization reversal has been achieved in BiFeO3-based multiferroic heterostructures, which is promising for the future development of low-power spintronic devices. However, all existing reports involve the use of an in-plane voltage that is unfavorable for practical device applications. Here, we investigate, using phase-field simulations, the out-of-plane (i.e., perpendicular to heterostructures) voltage controlled magnetism in heterostructures consisting of CoFe nanodots and (110) BiFeO3 thin film or island. It is predicted that the in-plane component of the canted magnetic moment at the CoFe/BiFeO3 interface can be reversed repeatedly by applying a perpendicular voltage across the bottom (110) BiFeO3 thin film, which further leads to an in-plane magnetization reversal in the overlaying CoFe nanodot. The non-volatility of such perpendicular voltage controlled magnetization reversal can be achieved by etching the continuous BiFeO3 film into isolated nanoislands with the same in-plane sizes as the CoFe nanodot. The findings would provide general guidelines for future experimental and engineering efforts on developing the electric-field controlled spintronic devices with BiFeO3-based multiferroic heterostructures.

100-nm-sized magnetic domain reversal by the magneto-electric effect in self-assembled BiFeO3/CoFe2O4 bilayer films

A (001)-epitaxial-BiFeO₃/CoFe₂O₄ bilayer was grown by self-assembly on SrTiO₃ (100) substrates by just coating a mixture precursor solution. The thickness ratio of the bilayer could be controlled by adjusting the composition ratio. For example, a BiFeO_x:CoFe₂O_x = 4:1 (namely Bi₄CoFe₆O_x) mixture solution could make a total thickness of 110nm divided into 85-nm-thick BiFeO₃ and 25-nm-thick CoFe₂O₄. Self-assembly of the bilayer occurred because the perovskite BiFeO₃ better matched the lattice constant (misfit approximately 1%) and crystal symmetry of the perovskite SrTiO₃ than the spinel CoFe₂O₄ (misfit approximately 7%). The magnetic domains of the hard magnet CoFe₂O₄ were switched by the polarization change of BiFeO₃ due to an applied vertical voltage, and the switched magnetic domain size was approximately 100nm in diameter. These results suggest that self-assembled BiFeO₃/CoFe₂O₄ bilayers are interesting in voltage driven nonvolatile memory with a low manufacturing cost.

Nonvolatile electric-field control of magnetization in a Y-type hexaferrite

The magnetoelectric effects in multiferroic materials enable the mutual control of electric polarization by a magnetic field and magnetization by an electric field. Nonvolatile electric-field control of magnetization is extremely important for information storage applications, but has been rarely realized in single-phase multiferroic materials. Here we demonstrate the prominent direct and converse magnetoelectric effects in the Y-type hexaferrite BaSrCoZnFe11AlO22 single crystal. The electric polarization due to conical magnetic structure can be totally reversed by a small magnetic field, giving rise to large magnetoelectric coefficients of 6000 and 4000 ps/m at 100 and 200 K, respectively. The ab-plane magnetization can be controlled by electric fields with a large hysteresis, leading to nonvolatile change of magnetization. In addition, the reversal of magnetization by electric fields is also realized at 200 K. These diverse magnetoelectric effects with large coefficients highlight the promise of hexaferrites as potential multiferroic materials.

Deterministic switching of ferromagnetism at room temperature using an electric field

The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO3 (refs 4 and 5). Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.

Structure and spin dynamics of multiferroic BiFeO3

Multiferroic materials have attracted much interest due to the unusual coexistence of ferroelectric and (anti-)ferromagnetic ground states in a single compound. They offer an exciting platform for new physics and potentially novel devices. BiFeO3 is one of the most celebrated multiferroic materials and has highly desirable properties. It is the only known room-temperature multiferroic with TC ≈ 1100 K and TN ≈ 650 K, and exhibits one of the largest spontaneous electric polarisations, P ≈ 80 µC cm(-2). At the same time, it has a magnetic cycloid structure with an extremely long period of 620 Å, which arises from competition between the usual symmetric exchange interaction and the antisymmetric Dzyaloshinskii-Moriya (DM) interaction. There is also an intriguing interplay between the DM interaction and single ion anisotropy K. In this review, we have attempted to paint a complete picture of bulk BiFeO3 by summarising the structural and dynamic properties of both the spin and lattice parts and their magneto-electric coupling.

Controlling magnetism on metal surfaces with non-magnetic means: electric fields and surface charging

We review the state of the art of surface magnetic property control with non-magnetic means, concentrating on metallic surfaces and techniques such as charge-doping or external electric field (EEF) application. Magneto-electric coupling via EEF-based charge manipulation is discussed as a way to tailor single adatom spins, exchange interaction between adsorbates or anisotropies of layered systems. The mechanisms of paramagnetic and spin-dependent electric field screening and the effect thereof on surface magnetism are discussed in the framework of theoretical and experimental studies. The possibility to enhance the effect of EEF by immersing the target system into an electrolyte or ionic liquid is discussed by the example of substitutional impurities and metallic alloy multilayers. A similar physics is pointed out for the case of charge traps, metallic systems decoupled from a bulk electron bath. In that case the charging provides the charge carrier density changes necessary to affect the magnetic moments and anisotropies in the system. Finally, the option of using quasi-free electrons rather than localized atomic spins for surface magnetism control is discussed with the example of Shockley-type metallic surface states confined to magnetic nanoislands.

Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface

Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

Size dependence of domain pattern transfer in multiferroic heterostructures

Magnetoelectric coupling in multiferroic heterostructures can produce large lateral modulations of magnetic anisotropy enabling the imprinting of ferroelectric domains into ferromagnetic films. Exchange and magnetostatic interactions within ferromagnetic films oppose the formation of such domains. Using micromagnetic simulations and a one-dimensional model, we demonstrate that competing energies lead to the breakdown of domain pattern transfer below a critical domain size. Moreover, rotation of the magnetic field results in abrupt transitions between two scaling regimes with different magnetic anisotropy. The theoretical predictions are confirmed by experiments on CoFeB/BaTiO3 heterostructures.

Landau theory of topological defects in multiferroic hexagonal manganites

Topological defects in ordered states with spontaneously broken symmetry often have unusual physical properties, such as fractional electric charge or a quantized magnetic field flux, originating from their non-trivial topology. Coupled topological defects in systems with several coexisting orders give rise to unconventional functionalities, such as the electric-field control of magnetization in multiferroics resulting from the coupling between the ferroelectric and ferromagnetic domain walls. Hexagonal manganites provide an extra degree of freedom: in these materials, both ferroelectricity and magnetism are coupled to an additional, non-ferroelectric structural order parameter. Here we present a theoretical study of topological defects in hexagonal manganites based on Landau theory with parameters determined from first-principles calculations. We explain the observed flip of electric polarization at the boundaries of structural domains, the origin of the observed discrete vortices, and the clamping between ferroelectric and antiferromagnetic domain walls. We show that structural vortices induce magnetic ones and that, consistent with a recent experimental report, ferroelectric domain walls can carry a magnetic moment.

Interface magnetism in epitaxial BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated on Si(100)

We report on the heteroepitaxial growth of ferroelectric (FE)-antiferromagnetic (AFM) BiFeO3 (BFO) on ferromagnetic La0.7Sr0.3MnO3 (LSMO), integrated on Si(100) using pulsed laser deposition via the domain matching epitaxy paradigm. The BFO/LSMO films were epitaxially grown on Si(100) by introducing epitaxial layers of SrTiO3/MgO/TiN. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, X-ray photo absorption spectroscopy, and atomic force microscopy were employed to fully characterize the samples. Furthermore, we have investigated the magnetic behavior of this five layer heterostructure, in which a d(5) system (Fe(3+)) manifested in FE-AFM BFO is epitaxially conjoined at the interface to a multivalent transition metal ion such as Mn(3+)/Mn(4+) in LSMO. The temperature- and magnetic field-dependent magnetization measurements reveal an unexpected enhancement in magnetic moment and improved magnetic hysteresis squareness originating from the BFO/LSMO interface. We observe a stronger temperature dependence of HEB when the polarity of field cooling is negative as compared to positive field cooling. We believe such an enhancement in magnetic moment and magnetic coupling is likely directly related to an electronic orbital reconstruction at the interface and complex interplay between orbital and spin degrees of freedom, similar to what has previously been reported in the literature. Future work will involve the linearly polarized X-ray absorption measurements to prove this hypothesis. This work represents a starting step toward the realization of magneto-electronic devices integrated with Si(100).

Superspin glass mediated giant spontaneous exchange bias in a nanocomposite of BiFeO3-Bi2Fe4O9

We observe an enormous spontaneous exchange bias (~300-600 Oe)--measured in an unmagnetized state following zero-field cooling--in a nanocomposite of BiFeO(3) (~94%)-Bi(2)Fe(4)O(9) (~6%) over a temperature range 5-300 K. Depending on the path followed in tracing the hysteresis loop--positive (p) or negative (n)--as well as the maximum field applied, the exchange bias (H(E)) varies significantly with | - H(Ep) | > | H(En) |. The temperature dependence of H(E) is nonmonotonic. It increases, initially, till ~150 K and then decreases as the blocking temperature T(B) is approached. All these rich features appear to be originating from the spontaneous symmetry breaking and consequent onset of unidirectional anisotropy driven by "superinteraction bias coupling" between the ferromagnetic core of Bi(2)Fe(4)O(9) (of average size ~19 nm) and the canted antiferromagnetic structure of BiFeO(3) (of average size ~112 nm) via superspin glass moments at the shell.

Emergent phenomena at multiferroic heterointerfaces

The coupling and reconstruction of electronic degrees of freedom (such as charge, spin and orbital) at a heterointerface can lead to unexpected and exotic states of matter. In this study, using model systems consisting of multiferroic BiFeO(3) and ferromagnetic La(0.7)Sr(0.3)MnO(3), we review the current understanding of a novel interfacial magnetic state formed at the interface, and highlight some possible mechanisms responsible for this interesting phenomenon and identify open questions for future studies.

Electric field control of magnetism in multiferroic heterostructures

We review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components. The magnetoelectric coupling in these composite systems is interfacial in origin, and can arise from elastic strain, charge, and exchange bias interactions, with different characteristic responses and functionalities. Moreover, charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.

Electric-field control of magnetic domain wall motion and local magnetization reversal

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO₃ heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.

Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

Multi-ferroic and magnetoelectric materials and interfaces

The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

Skin layer of BiFeO(3) single crystals

A surface layer ("skin") different from the bulk was found in single crystals of BiFeO(3). Impedance analysis and grazing incidence x-ray diffraction reveal a phase transition at T(*)∼275±5 °C that is confined within the surface of BiFeO(3). X-ray photoelectron spectroscopy and refraction-corrected x-ray diffraction as a function of incidence angle and photon wavelength indicate a reduced electron density and an elongated out-of-plane lattice parameter within a few nanometers of the surface. The skin will affect samples with large surface to volume ratios, as well as devices that rely on interfacial coupling such as exchange bias.

Recent progress in multiferroic magnetoelectric composites: from bulk to thin films

Multiferroic magnetoelectric composite systems such as ferromagnetic-ferroelectric heterostructures have recently attracted an ever-increasing interest and provoked a great number of research activities, driven by profound physics from coupling between ferroelectric and magnetic orders, as well as potential applications in novel multifunctional devices, such as sensors, transducers, memories, and spintronics. In this Review, we try to summarize what remarkable progress in multiferroic magnetoelectric composite systems has been achieved in most recent few years, with emphasis on thin films; and to describe unsolved issues and new device applications which can be controlled both electrically and magnetically.

Magnetization reversal by electric-field decoupling of magnetic and ferroelectric domain walls in multiferroic-based heterostructures

We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO(3)) can be speedily reversed by electric-field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO(3) is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and antiferromagnetic domain walls. Their distinct dynamics are essential for the observed magnetic switching.

Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates

A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low- and high-resistance states results from the strain-driven magnetization reorientations by about 90°, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout.

Melting of Bi sublattice in nanosized BiFeO3 Perovskite by resonant X-ray diffraction

Free-standing BiFeO3 perovskite particles with a size ranging from polycrystalline bulk down to 5 nm have been studied by high-energy resonant (Bi K edge) x-ray diffraction coupled to differential atomic pair distribution function analysis. Nanosized BiFeO3 particles are found to exhibit extra, i.e., beyond the usual thermal, structural disorder that increases progressively with diminishing their size. In particles of size smaller than approximately 18 nm the disorder destroys the structural coherence of the Bi sublattice and disturbs that of the Fe-based sublattice in the perovskite structure, substantially affecting the magnetoelectric properties it carries. The new structural information helps better understand the unusual behavior of perovskites structured at the nanoscale.

Multiferroic and magnetoelectric materials--novel developments and perspectives

Magnetoelectric (ME) materials are of utmost interest in view of both fundamental understanding and novel desirable applications. Despite its smallness, the linear ME effect has been shown to control spintronic devices very efficiently, e.g., by using the classic ME antiferromagnet Cr₂O₃. Similar nano-engineering concepts exist also for type-I multiferroic single phase materials like BiFeO₃ and BiMnO₃. Record high ME response has been realized in stress-strain coupled multiphase magnetoelectrics like PZT/FeBSiC composites, enabling applications in sensors. In type-II multiferroics, whose ferroelectricity is due to modulated magnetic ordering, the ME coupling is of fundamental interest. Higher-order ME response characterizes disordered systems, which extend the conventional multiferroic scenario toward ME multiglass (e.g., Sr(1-x)MnxTiO₃).