Control of tetrahedral coordination and superconductivity in FeSe0.5Te0.5 thin films

Effects of Te- and Fe-doping on the superconducting properties in FeySe1-xTex thin films

High quality FeySe1-xTex epitaxial thin films have been fabricated on TiO2-buffered SrTiO3 substrates by pulsed laser deposition technology. There is a significant composition deviation between the nominal target and the thin film. Te doping can affect the Se/Te ratio and Fe content in chemical composition. The superconducting transition temperature Tc is closely related to the chemical composition. Fe vacancies are beneficial for the FeySe1-xTex films to exhibit the higher Tc. A 3D phase diagram is given that the optimize range is x = 0.13-0.15 and y = 0.73-0.78 for FeySe1-xTex films. The anisotropic, effective pining energy, and critical current density for the Fe0.72Se0.94Te0.06, Fe0.76Se0.87Te0.13 and Fe0.91Se0.77Te0.23 films were studied in detail. The scanning transmission electron microscopy images display a regular atomic arrangement at the interfacial structure.

Chemical Composition Control at the Substrate Interface as the Key for FeSe Thin-Film Growth

The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches toward inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition that determine FeSe thin-film growth and focuses on the film/substrate interface, which has only been considered hypothetically in the past literature. The FeSe/MgO interface has been assumed (1) to be clean and (2) to obey lattice-matching epitaxy. Our studies reveal that both assumptions are misleading and demonstrate the tendency for domain-matching epitaxial growth, which accompanies the problem of chemical heterogeneity. We propose that homogenization of the film/substrate interface by an Fe buffer can improve the control of stoichiometry and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. We will also show that on a chemically homogenized FeSe/Fe interface, the control of film texture with preparation conditions is still possible.

Evolution of Superconducting Properties in Fe1.1Se0.8Te0.2 Films Before and After Structure Avalanche

By preparing a series of high-quality Fe_1.1Se_0.8Te_0.2 films on the CaF₂ substrate via pulsed laser deposition, we reveal the evolution of the structure as well as the superconductivity with the film thickness. We have found that there exists a threshold thickness above which the critical temperature T_c reaches its optimal value of 23.18 K with large activation energy, promising for high-field technological applications. Most importantly, the thick films have been found in a metastable state due to the fragile balance between the increased strain energy and the large compressive stress. Once the balance is broken by an external perturbation, a unique structure avalanche happens with a large part of the film exfoliated from the substrate and curves out. The exfoliated part of the film remains a single phase, with its lattice parameter and T_c recovering the bulk values. Our results clearly demonstrate the close relation between the compressive stress of the film/substrate interface and the high critical temperature observed in FeSeTe films. Moreover, this also provides an efficient way to fabricate free-standing single-phase FeSeTe crystals in the phase-separation regime.

Emerging Magnetic Interactions in van der Waals Heterostructures

Vertical van der Waals (vdWs) heterostructures based on layered materials are attracting interest as a new class of quantum materials, where interfacial charge-transfer coupling can give rise to fascinating strongly correlated phenomena. Transition metal chalcogenides are a particularly exciting material family, including ferromagnetic semiconductors, multiferroics, and superconductors. Here, we report the growth of an organic-inorganic heterostructure by intercalating molecular electron donating bis(ethylenedithio)tetrathiafulvalene into (Li,Fe)OHFeSe, a layered material in which the superconducting ground state results from the intercalation of hydroxide layer. Molecular intercalation in this heterostructure induces a transformation from a paramagnetic to spin-glass-like state that is sensitive to the stoichiometry of molecular donor and an applied magnetic field. Besides, electron-donating molecules reduce the electrical resistivity in the heterostructure and modify its response to laser illumination. This hybrid heterostructure provides a promising platform to study emerging magnetic and electronic behaviors in strongly correlated layered materials.

Growth of High-Quality Superconducting FeSe0.5Te0.5 Films on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 and Electric-Field Modulation of Superconductivity

Heterostructures composed of superconductor and ferroelectrics (SC/FE) are very important for manipulating the superconducting property and applications. However, growth of high-quality superconducting iron chalcogenide films is challenging because of their volatility and FE substrate with rough surface and large lattice mismatch. Here, we report a two-step growth approach to get high-quality FeSe_0.5Te_0.5 (FST) films on FE Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ with large lattice mismatch, which show superconductivity at only around 10 nm. Through a systematic study of structural and electric transport properties of samples with different thicknesses, a mechanism to grow high-quality FST is discovered. Moreover, electric-field-induced remarkable change of T_c (superconducting transition temperature) is demonstrated in a 20 nm FST film. This work paves the way to grow high-quality films which contain volatile element and have large lattice mismatch with the substrate. It is also helpful for manipulating the superconducting property in SC/FE heterostructures.

Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe_1−xTe_x seed layer for subsequent homoepitaxial growth of superconducting FeSe_1−xTe_x thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe_1−xTe_x of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe_1−xTe_x. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe_1−xTe_x thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C–320 °C) on MgO using PLD. This offers a broad scope of various applications.

Quasi-two-dimensional superconductivity in FeSe0.3Te0.7 thin films and electric-field modulation of superconducting transition

We report the structural and superconducting properties of FeSe_0.3Te_0.7 (FST) thin films with different thicknesses grown on ferroelectric Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ substrates. It was shown that the FST films undergo biaxial tensile strains which are fully relaxed for films with thicknesses above 200 nm. Electrical transport measurements reveal that the ultrathin films exhibit an insulating behavior and superconductivity appears for thicker films with T_c saturated above 200 nm. The current-voltage curves around the superconducting transition follow the Berezinskii-Kosterlitz-Thouless (BKT) transition behavior and the resistance-temperature curves can be described by the Halperin–Nelson relation, revealing quasi-two-dimensional phase fluctuation in FST thin films. The Ginzburg number decreases with increasing film thickness indicating the decrease of the strength of thermal fluctuations. Upon applying electric field to the heterostructure, T_c of FST thin film increases due to the reduction of the tensile strain in FST. This work sheds light on the superconductivity, strain effect as well as electric-field modulation of superconductivity in FST films.

Artefacts in geometric phase analysis of compound materials

The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron microscope (TEM) images. It is also attractive for analysis of aberration-corrected scanning TEM (ac-STEM) images that resolve every atom column, since it uses Fourier transforms and does not require real-space peak detection and assignment to appropriate sublattices. Here it is demonstrated that, in ac-STEM images of compound materials with compositionally distinct atom columns, an additional geometric phase is present in the Fourier transform. If the structure changes from one area to another in the image (e.g. across an interface), the change in this additional phase will appear as a strain in conventional GPA, even if there is no lattice strain. Strategies to avoid this pitfall are outlined.

Unabridged phase diagram for single-phased FeSe(x)Te(1-x) thin films

A complete phase diagram and its corresponding physical properties are essential prerequisites to understand the underlying mechanism of iron-based superconductivity. For the structurally simplest 11 (FeSeTe) system, earlier attempts using bulk samples have not been able to do so due to the fabrication difficulties. Here, thin FeSe_xTe_1-x films with the Se content covering the full range (0 ≤ x ≤ 1) were fabricated by using pulsed laser deposition method. Crystal structure analysis shows that all films retain the tetragonal structure in room temperature. Significantly, the highest superconducting transition temperature (T_C = 20 K) occurs in the newly discovered domain, i.e., 0.6 ≤ x ≤ 0.8. The single-phased superconducting dome for the full Se doping range is the first of its kind in iron chalcogenide superconductors. Our results present a new avenue to explore novel physics as well as to optimize superconductors.

Strain induced superconductivity in the parent compound BaFe2As2

The discovery of superconductivity with a transition temperature, Tc, up to 65 K in single-layer FeSe (bulk Tc=8 K) films grown on SrTiO3 substrates has attracted special attention to Fe-based thin films. The high Tc is a consequence of the combined effect of electron transfer from the oxygen-vacant substrate to the FeSe thin film and lattice tensile strain. Here we demonstrate the realization of superconductivity in the parent compound BaFe2As2 (no bulk Tc) just by tensile lattice strain without charge doping. We investigate the interplay between strain and superconductivity in epitaxial BaFe2As2 thin films on Fe-buffered MgAl2O4 single crystalline substrates. The strong interfacial bonding between Fe and the FeAs sublattice increases the Fe-Fe distance due to the lattice misfit, which leads to a suppression of the antiferromagnetic spin density wave and induces superconductivity with bulk Tc≈10 K. These results highlight the role of structural changes in controlling the phase diagram of Fe-based superconductors.

Thin film growth of Fe-based superconductors: from fundamental properties to functional devices. A comparative review

Fe-based superconductors bridge a gap between MgB2 and the cuprate high temperature superconductors as they exhibit multiband character and transition temperatures up to around 55 K. Investigating Fe-based superconductors thus promises answers to fundamental questions concerning the Cooper pairing mechanism, competition between magnetic and superconducting phases, and a wide variety of electronic correlation effects. The question addressed in this review is, however, is this new class of superconductors also a promising candidate for technical applications? Superconducting film-based technologies range from high-current and high-field applications for energy production and storage to sensor development for communication and security issues and have to meet relevant needs of today’s society and that of the future. In this review we will highlight and discuss selected key issues for Fe-based superconducting thin film applications. We initially focus our discussion on the understanding of physical properties and actual problems in film fabrication based on a comparison of different observations made in the last few years. Subsequently we address the potential for technological applications according to the current situation.

Magnetic phase transitions and superconductivity in strained FeTe

The influence of hydrostatic pressure and ab-plane strain on the magnetic structure of FeTe is investigated from first principles. The results of calculations reveal a phase transition from antiferromagnetic double-stripe ordering at ambient pressure to ferromagnetic ordering at 2 GPa, or under compressive strain reducing the lattice parameter a by about 3%. In turn, a tensile strain of less than 2% induces the phase transition to antiferromagnetic single-stripe ordering. It corresponds to the superconducting FeTe thin films, thereby confirming that the superconducting state is positively linked to single-stripe antiferromagnetic fluctuations. Both types of transition indicate that the position of Te atoms in the crystal is crucial for the magnetic and superconducting properties of iron chalcogenides.

Direct probe of interplay between local structure and superconductivity in FeTe₀.₅₅Se₀.₄₅

The relationship between atomically defined structures and physical properties in functional materials remains a subject of constant interest. We explore the interplay between local crystallographic structure, composition, and local superconductive properties in iron chalcogenide superconductors. Direct structural analysis of scanning tunneling microscopy data allows local lattice distortions and structural defects across an FeTe0.55Se0.45 surface to be explored on a single unit-cell level. Concurrent superconducting gap (SG) mapping reveals suppression of the SG at well-defined structural defects, identified as a local structural distortion. The strong structural distortion causes the vanishing of the superconducting state. This study provides insight into the origins of superconductivity in iron chalcogenides by providing an example of atomic-level studies of the structure-property relationship.

Recent advances in β-FeSe1-x and related superconductors

It has been more than four years since the discovery of β-FeSe1-x superconductors. Through the efforts of many outstanding research groups, unprecedented advances in the field have been achieved. High-quality single crystals of β-FeSe1-x and related compounds have been prepared by various techniques, allowing us to explore in detail the physical properties of this class of materials. Detailed characterizations of the structure and properties of these crystals have helped us to understand the origin of superconductivity in β-FeSe1-x . The occurrence of superconductivity is associated with the low-temperature structure distortion, which is accompanied by several anomalies. Recent measurements on quasiparticle and acoustic phonon dynamics with respect to the orbital modification in β-FeSe1-x suggest the opening of an energy gap below 130-140 K, accompanied by a coincident transfer of optical spectral weight in the visible range and alterations in transport properties. These observations provide convincing evidence that the modification of the electronic structure occurs prior to the lattice distortion. They further suggest that the high-temperature gap and the lattice symmetry breaking are driven by short-range orbital and/or charge orders.

Superconducting properties of iron chalcogenide thin films

Iron chalcogenides, binary FeSe, FeTe and ternary FeTe _x Se_1-x , FeTe _x S_1-x and FeTe:O _x , are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i) easy fabrication and epitaxial growth on common single-crystal substrates; (ii) strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe_0.5Se_0.5, zero-resistance transition temperature T_c0^bulk = 13.5 K, but T_c0^film = 19 K on LaAlO₃ substrate); (iii) high critical current density (J_c ∼ 0.5 ×10⁶ A cm² at 4.2 K and 0 T for FeTe_0.5Se_0.5 film deposited on CaF₂, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition) with a weak dependence on magnetic field; (iv) high upper critical field (∼50 T for FeTe_0.5Se_0.5, B_c2(0), with a low anisotropy, γ ∼ 2). These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20-50 T) and low temperatures (2-10 K).

Suppression of superconductivity by twin boundaries in FeSe

Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate twin boundaries in stoichiometric FeSe films grown by molecular beam epitaxy. Twin boundaries can be unambiguously identified by imaging the 90° change in the orientation of local electronic dimers from Fe site impurities on either side. Twin boundaries run at approximately 45° to the Fe-Fe bond directions, and noticeably suppress the superconducting gap, in contrast with the recent experimental and theoretical findings in other iron pnictides. Furthermore, vortices appear to accumulate on twin boundaries, consistent with the degraded superconductivity there. The variation in superconductivity is likely caused by the increased Se height in the vicinity of twin boundaries, providing the first local evidence for the importance of this height to the mechanism of superconductivity.