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Guo Y, Peng B, Lu G, Dong G, Yang G, Chen B, Qiu R, Liu H, Zhang B, Yao Y, Zhao Y, Li S, Ding X, Sun J, Liu M. Remarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO 3 membranes. Nat Commun 2024; 15:4414. [PMID: 38782889 PMCID: PMC11116490 DOI: 10.1038/s41467-024-47419-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Accepted: 04/02/2024] [Indexed: 05/25/2024] Open
Abstract
The ultrahigh flexibility and elasticity achieved in freestanding single-crystalline ferroelectric oxide membranes have attracted much attention recently. However, for antiferroelectric oxides, the flexibility limit and fundamental mechanism in their freestanding membranes are still not explored clearly. Here, we successfully fabricate freestanding single-crystalline PbZrO3 membranes by a water-soluble sacrificial layer technique. They exhibit good antiferroelectricity and have a commensurate/incommensurate modulated microstructure. Moreover, they also have good shape recoverability when bending with a small radius of curvature (about 2.4 μm for the thickness of 120 nm), corresponding to a bending strain of 2.5%. They could tolerate a maximum bending strain as large as 3.5%, far beyond their bulk counterpart. Our atomistic simulations reveal that this remarkable flexibility originates from the antiferroelectric-ferroelectric phase transition with the aid of polarization rotation. This study not only suggests the mechanism of antiferroelectric oxides to achieve high flexibility but also paves the way for potential applications in flexible electronics.
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Affiliation(s)
- Yunting Guo
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bin Peng
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Guangming Lu
- School of Environmental and Material Engineering, Yantai University, Yantai, 264005, China
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guohua Dong
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guannan Yang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bohan Chen
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ruibin Qiu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Haixia Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Butong Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yufei Yao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yanan Zhao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Suzhi Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
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2
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Song J, Ebihara Y, Yudin P, Sakata O, Morioka H, Kiguchi T, Kondo S, Yuan X, Okamura S, Yoshino M, Nagasaki T, Yamada T. Novel Route for Enhancing Piezoelectricity of Ferroelectric Films: Controlling Nontrivial Polarization States in Pb(Zr, Ti)O 3 Monodomain Superlattice Structure. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16145-16151. [PMID: 38515379 DOI: 10.1021/acsami.3c18721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Artificial superlattice films made of Pb(Zr0.4Ti0.6)O3 and Pb(Zr0.6Ti0.4)O3 were investigated for their polarization states and piezoelectric properties theoretically and experimentally in this study. The developed theory predicts nontrivial polarization along neither [001] nor [111] directions in (111)-epitaxial monodomain superlattice films with uniform compressive strain. Such films were achieved via pulsed laser deposition. When the layer thickness is reduced to 3 nm, d33 becomes 128 ± 3.8 pm/V at 100 kV/cm and 71.3 ± 2.83 pm/V at 600 kV/cm, comparable to that of (111)-oriented Pb(Zr0.4Ti0.6)O3 or Pb(Zr0.6Ti0.4)O3 bulks and clearly exceeding that of the typical clamped films. The measurement agrees with the theoretical analysis, which reveals that the enhanced piezoelectricity is due to rotation of the nontrivial polarization. Furthermore, the theoretical study predicts an even larger d33 exceeding 300 pm/V for specific parameters in superlattice films with uniform tensile strain, which is promising for applications of microelectromechanical systems.
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Affiliation(s)
- Jundong Song
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
- Department of Applied Physics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585, Japan
| | - Youhei Ebihara
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Petr Yudin
- Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, Praha 8 18221, Czech Republic
| | - Osami Sakata
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan
- Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (NIMS), 1-1-1, Kouto, Sayo, Hyogo 679-5148, Japan
| | - Hitoshi Morioka
- Application Department, X-ray Division, Bruker Japan K.K., Yokohama 221-0022, Japan
| | - Takanori Kiguchi
- Magnesium Research Center, Kumamoto University, Chuo-ku, Kurokami, Kumamoto 860-8555, Japan
| | - Shinya Kondo
- Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
| | - Xueyou Yuan
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Soichiro Okamura
- Department of Applied Physics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585, Japan
| | - Masahito Yoshino
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Takanori Nagasaki
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Tomoaki Yamada
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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3
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Roscow J, Li Y, Hall D. Residual stress and domain switching in freeze cast porous barium titanate. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2021.11.046] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2022]
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He L, Lu J, Han C, Liu X, Liu J, Zhang C. Electrohydrodynamic Pulling Consolidated High-Efficiency 3D Printing to Architect Unusual Self-Polarized β-PVDF Arrays for Advanced Piezoelectric Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200114. [PMID: 35218161 DOI: 10.1002/smll.202200114] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Revised: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Piezoelectric pressure sensors are important for applications in robotics, artificial intelligence, communication devices, etc. The hyperboloid is theoretically predicted to be an unusual 3D structure that allows concerted piezoelectric enhancement owing to its synergistic effects of geometrical stress confinement and stress concentration, but has not been experimentally fulfilled due to a lack of efficient architecting techniques. In this work, a 3D hyperboloidal arrayed self-polarized PVDF piezoelectric energy harvester (PEH) is successfully fabricated by incorporating electrohydrodynamic (EHD) pulling technology into fused deposition modeling (FDM) 3D printing. This strategy not only simplifies the layer-by-layer constructing procedure for arrays, but simultaneously realizes a self-polarized and high β-phase (92%) PVDF PEH in a single electric-pulling step, saving posttreatment such as poling and removing excessive additives. Such a PEH delivers a significantly enhanced piezoelectric potential which is around 8 times that of a 2D flat film sensor. Moreover, this PEH featuring excellent linearity within a wide pressure regime, enables the sensing of human activities in a relatively large force range, which is otherwise difficult for traditional film sensors to differentiate. This work demonstrates a potential roadmap to advanced piezoelectric sensors exploiting unusual 3D structures enabled by the unique EHD pulling coupled 3D printing technique.
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Affiliation(s)
- Lirong He
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu, 610065, China
| | - Jin Lu
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu, 610065, China
| | - Cheng Han
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu, 610065, China
| | - Xingang Liu
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu, 610065, China
| | - Jingfeng Liu
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu, 610065, China
| | - Chuhong Zhang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute, Sichuan University, Chengdu, 610065, China
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5
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Peng B, Tang H, Cheng Y, Zhang Y, Qiu R, Lu Q, Zhou Z, Liu M. Voltage Control of Perpendicular Magnetic Anisotropy in Multiferroic Composite Thin Films under Strong Electric Fields. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61404-61412. [PMID: 34914375 DOI: 10.1021/acsami.1c16582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
"Ferroelectric/ferromagnetic" multiferroic composites with perpendicular magnetic anisotropy (PMA) are useful for developing power-efficient magnetic memories. Voltage control of PMA has been demonstrated in bulk multiferroic composites based on ferroelectric single crystals, but they are not compatible for integration. Multiferroic composite thin films are useful for developing integrated devices; however, voltage control of PMA in them has not been achieved yet at room temperature due to their low magnetoelectric (ME) coupling coefficient. Here, we demonstrate such functionality and propose to enhance their ME coupling effect under a strong electric field by taking full advantage of the large dielectric strength of ferroelectric thin films. First, the thickness-dependent breakdown of Pb(Zr0.384Ti0.576Nb0.04)O3 (PNZT) thin films was studied, and the two-layer (∼200 nm) samples exhibited the highest breakdown strength (3.68 MV/cm) and small surface roughness (<1 nm). Second, we fabricated "PNZT/(Co/Pt)5" thin films with strong PMA whose breakdown strength is nearly independent of the top electrode materials. Finally, voltage-induced effective magnetic field (Heff) in "PNZT/(Co/Pt)5" was studied. It is comparable to that achieved in bulk composites and will induce magnetization switching under strong electric fields. Multiferroic composite thin films with large breakdown strength will provide a useful platform for enabling integrated multiferroic devices.
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Affiliation(s)
- Bin Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Haowen Tang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Yuxin Cheng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Yao Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Ruibin Qiu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Qi Lu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacture and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, P. R. China
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6
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Lindemann S, Irwin J, Kim GY, Wang B, Eom K, Wang J, Hu J, Chen LQ, Choi SY, Eom CB, Rzchowski MS. Low-voltage magnetoelectric coupling in membrane heterostructures. SCIENCE ADVANCES 2021; 7:eabh2294. [PMID: 34767439 PMCID: PMC8589311 DOI: 10.1126/sciadv.abh2294] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 09/27/2021] [Indexed: 06/13/2023]
Abstract
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low-power multifunctional devices. Relaxor-FEs, such as (1 − x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates because of their giant piezoelectricity. However, thin films of PMN-PT suffer from substrate clamping, which substantially reduces piezoelectric in-plane strains. Here, we demonstrate low-voltage ME coupling in an all-thin-film heterostructure that uses the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90° Ni magnetization rotation with 3 V PMN-PT bias, much less than the bulk PMN-PT ~100-V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step toward understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven ME heterostructures.
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Affiliation(s)
- Shane Lindemann
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Julian Irwin
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Korea
| | - Bo Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Jianjun Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Jiamian Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Korea
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Mark S. Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
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7
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Liu X, Shang Y, Zhang J, Zhang C. Ionic Liquid-Assisted 3D Printing of Self-Polarized β-PVDF for Flexible Piezoelectric Energy Harvesting. ACS APPLIED MATERIALS & INTERFACES 2021; 13:14334-14341. [PMID: 33729751 DOI: 10.1021/acsami.1c03226] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Three-dimensional (3D) printing technologies have unparalleled advantages in constructing piezoelectric devices with three-dimensional structures, which are conducive to improving the efficiency of energy harvesting. Among them, fused deposition modeling (FDM) is the most widely used thanks to its low cost and wide range of molding materials. However, as the best piezoelectric polymer, a high electroactive β-phase poly(vinylidene fluoride) (PVDF) piezoelectric device cannot be directly obtained by FDM printing because the β-crystal is unstable at the molten state. Herein, we develop for the first time ionic liquid (IL)-assisted FDM for direct printing of β-PVDF piezoelectric devices. An IL can induce and maintain β crystals during melt extrusion and FDM printing, ensuring that the β-crystal in the printed PVDF device is as high as 98.3%, which is the highest in 3D-printed PVDF as far as we know. Furthermore, the shearing force provided by the FDM facilitates the directional arrangement of the dipoles, resulting in the printed PVDF device having self-polarization characteristics without poling. Finally, the piezoelectric output voltage of the 3D-printed PVDF device is 4.7 times that of the flat PVDF device, and its area current density (17.5 nA cm-2) is more than that of the reported 3D-printed PVDF piezoelectric device in the literature by two orders of magnitude. The one-step 3D printing strategy proposed in this paper can realize the rapid preparation of complex-shaped and lightweight self-polarized β-PVDF-based piezoelectric devices for energy harvesting.
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Affiliation(s)
- Xingang Liu
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu 610065, China
| | - Yinghao Shang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu 610065, China
| | - Jihai Zhang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu 610065, China
| | - Chuhong Zhang
- State Key Laboratory of Polymer Materials Engineering, Polymer Research Institute of Sichuan University, Chengdu 610065, China
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8
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Multifunctional Cantilevers as Working Elements in Solid-State Cooling Devices. ACTUATORS 2021. [DOI: 10.3390/act10030058] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Despite the challenges of practical implementation, electrocaloric (EC) cooling remains a promising technology because of its good scalability and high efficiency. Here, we investigate the feasibility of an EC cooling device that couples the EC and electromechanical (EM) responses of a highly functionally, efficient, lead magnesium niobate ceramic material. We fabricated multifunctional cantilevers from this material and characterized their electrical, EM and EC properties. Two active cantilevers were stacked in a cascade structure, forming a proof-of-concept device, which was then analyzed in detail. The cooling effect was lower than the EC effect of the material itself, mainly due to the poor solid-to-solid heat transfer. However, we show that the use of ethylene glycol in the thermal contact area can significantly reduce the contact resistance, thereby improving the heat transfer. Although this solution is most likely impractical from the design point of view, the results clearly show that in this and similar cooling devices, a non-destructive, surface-modification method, with the same effectiveness as that of ethylene glycol, will have to be developed to reduce the thermal contact resistance. We hope this study will motivate the further development of multifunctional cooling devices.
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Wang HS, Hong SK, Han JH, Jung YH, Jeong HK, Im TH, Jeong CK, Lee BY, Kim G, Yoo CD, Lee KJ. Biomimetic and flexible piezoelectric mobile acoustic sensors with multiresonant ultrathin structures for machine learning biometrics. SCIENCE ADVANCES 2021; 7:eabe5683. [PMID: 33579699 PMCID: PMC7880591 DOI: 10.1126/sciadv.abe5683] [Citation(s) in RCA: 44] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2020] [Accepted: 12/30/2020] [Indexed: 05/19/2023]
Abstract
Flexible resonant acoustic sensors have attracted substantial attention as an essential component for intuitive human-machine interaction (HMI) in the future voice user interface (VUI). Several researches have been reported by mimicking the basilar membrane but still have dimensional drawback due to limitation of controlling a multifrequency band and broadening resonant spectrum for full-cover phonetic frequencies. Here, highly sensitive piezoelectric mobile acoustic sensor (PMAS) is demonstrated by exploiting an ultrathin membrane for biomimetic frequency band control. Simulation results prove that resonant bandwidth of a piezoelectric film can be broadened by adopting a lead-zirconate-titanate (PZT) membrane on the ultrathin polymer to cover the entire voice spectrum. Machine learning-based biometric authentication is demonstrated by the integrated acoustic sensor module with an algorithm processor and customized Android app. Last, exceptional error rate reduction in speaker identification is achieved by a PMAS module with a small amount of training data, compared to a conventional microelectromechanical system microphone.
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Affiliation(s)
- Hee Seung Wang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seong Kwang Hong
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jae Hyun Han
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Young Hoon Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyun Kyu Jeong
- School of Computing, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Tae Hong Im
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chang Kyu Jeong
- Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Bo-Yeon Lee
- Department of Nature-Inspired Nano-convergence System, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-Ro, Yuseong-gu, Daejeon 34103, Republic of Korea
| | - Gwangsu Kim
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chang D Yoo
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
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10
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Denis-Rotella LM, Esteves G, Walker J, Zhou H, Jones JL, Trolier-McKinstry S. Residual Stress and Ferroelastic Domain Reorientation in Declamped {001} Pb(Zr 0.3Ti 0.7)O 3 Films. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2021; 68:259-272. [PMID: 32286973 DOI: 10.1109/tuffc.2020.2987438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ferroelectric films are often constrained by their substrates and subject to scaling effects, including suppressed dielectric permittivity. In this work, the thickness dependence of intrinsic and extrinsic contributions to the dielectric properties was elucidated. A novel approach to quantitatively deconstruct the relative permittivity into three contributions (intrinsic, reversible extrinsic, and irreversible extrinsic) was developed using a combination of X-ray diffraction (XRD) and Rayleigh analysis. In situ synchrotron XRD was used to understand the influence of residual stress and substrate clamping on the domain state, ferroelastic domain reorientation, and electric field-induced strain. For tetragonal {001} textured Pb0.99(Zr0.3Ti0.7)0.98Nb0.02O3 thin films clamped to an Si substrate, a thickness-dependent in-plane tensile stress developed during processing, which dictates the domain distribution over a thickness range of 0.27- [Formula: see text]. However, after the films were partially declamped from the substrate and annealed, the residual stress was alleviated. As a result, the thickness dependence of the volume fraction of c -domains largely disappeared, and the out-of-plane lattice spacings ( d ) for both a - and c -domains increased. The volume fraction of c -domains was used to calculate the intrinsic relative permittivity. The reversible Rayleigh coefficient was then used to separate the intrinsic and reversible extrinsic contributions. The reversible extrinsic response accounted for ~50% of the overall relative permittivity (measured at 50 Hz and alternating current (ac) field of 0.5·Ec ) and was thickness dependent even after poling and upon release.
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11
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Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition. Sci Rep 2020; 10:16834. [PMID: 33033329 PMCID: PMC7545169 DOI: 10.1038/s41598-020-73657-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 09/02/2020] [Indexed: 11/11/2022] Open
Abstract
The discovery of a two-dimensional electron gas (2DEG) at the \documentclass[12pt]{minimal}
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\begin{document}$$\hbox {LaAlO}_3/\hbox {SrTiO}_3$$\end{document}LaAlO3/SrTiO3 interface has set a new platform for all-oxide electronics which could potentially exhibit the interplay among charge, spin, orbital, superconductivity, ferromagnetism and ferroelectricity. In this work, by using angle-resolved photoemission spectroscopy and conductivity measurement, we found the reduction of 2DEGs and the changes of the conductivity nature of some ferroelectric oxides including insulating Nb-lightly-substituted \documentclass[12pt]{minimal}
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\begin{document}$$\hbox {BaTiO}_3$$\end{document}BaTiO3 (BTO) and (Ca,Zr)-doped BTO across paraelectric-ferroelectric transition. We propose that these behaviours could be due to the increase of space-charge screening potential at the 2DEG/ferroelectric regions which is a result of the realignment of ferroelectric polarisation upon light irradiation. This finding suggests an opportunity for controlling the 2DEG at a bare oxide surface (instead of interfacial system) by using both light and ferroelectricity.
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Peng B, Peng RC, Zhang YQ, Dong G, Zhou Z, Zhou Y, Li T, Liu Z, Luo Z, Wang S, Xia Y, Qiu R, Cheng X, Xue F, Hu Z, Ren W, Ye ZG, Chen LQ, Shan Z, Min T, Liu M. Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO 3 membranes. SCIENCE ADVANCES 2020; 6:6/34/eaba5847. [PMID: 32937363 PMCID: PMC7442355 DOI: 10.1126/sciadv.aba5847] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2019] [Accepted: 07/10/2020] [Indexed: 05/05/2023]
Abstract
The integration of ferroic oxide thin films into advanced flexible electronics will bring multifunctionality beyond organic and metallic materials. However, it is challenging to achieve high flexibility in single-crystalline ferroic oxides that is considerable to organic or metallic materials. Here, we demonstrate the superior flexibility of freestanding single-crystalline BiFeO3 membranes, which are typical multiferroic materials with multifunctionality. They can endure cyclic 180° folding and have good recoverability, with the maximum bending strain up to 5.42% during in situ bending under scanning electron microscopy, far beyond their bulk counterparts. Such superior elasticity mainly originates from reversible rhombohedral-tetragonal phase transition, as revealed by phase-field simulations. This study suggests a general fundamental mechanism for a variety of ferroic oxides to achieve high flexibility and to work as smart materials in flexible electronics.
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Affiliation(s)
- Bin Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ren-Ci Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yong-Qiang Zhang
- Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) and Hysitron Applied Research Center in China (HARCC), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
| | - Yuqing Zhou
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Tao Li
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| | - Zhijie Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Shaohao Wang
- Department of Microelectronics Science and Technology, Fuzhou University, Qi Shan Campus, Fuzhou 350108, China
| | - Yan Xia
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Ruibin Qiu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Fei Xue
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zuo-Guang Ye
- Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, BC V5A 1S6, Canada
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Zhiwei Shan
- Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) and Hysitron Applied Research Center in China (HARCC), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Tai Min
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
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Langenberg E, Paik H, Smith EH, Nair HP, Hanke I, Ganschow S, Catalan G, Domingo N, Schlom DG. Strain-Engineered Ferroelastic Structures in PbTiO 3 Films and Their Control by Electric Fields. ACS APPLIED MATERIALS & INTERFACES 2020; 12:20691-20703. [PMID: 32292024 DOI: 10.1021/acsami.0c04381] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO3 thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a1/a2 superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO3 on GdScO3-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.
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Affiliation(s)
- Eric Langenberg
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Eva H Smith
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hari P Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Isabelle Hanke
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Steffen Ganschow
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
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14
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Chin ES, Cress CD, Rudy RQ, Bassiri-Gharb N. Effects of Gamma Irradiation on Functional Response of Relaxor-Ferroelectric Thin Films. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2020; 67:1059-1065. [PMID: 31902760 DOI: 10.1109/tuffc.2019.2963194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
This work investigates the radiation response of relaxor-ferroelectric, lead magnesium niobate-lead titanate (PMN-PT) thin films, as an alternative material for microelectromechanical system (MEMS) devices in harsh environments. PMN-PT (0.7Pb[Mg1/3Nb2/3]O3-0.3PbTiO3) thin films were fabricated via chemical solution deposition onto platinized Si wafers and exposed to gamma radiation doses up to 10 Mrad(Si). The functional response of the thin films was measured before and after irradiation, and the resulting changes were reported. Within the radiation dose range studied, dielectric permittivity, tunability, and saturated polarization showed <5% change, and saturated piezoelectric coefficient <10% change. Additionally, PMN-PT thin films showed equivalent or superior radiation tolerance compared with lead zirconate titanate thin films previously studied. Higher chemical heterogeneity and greater domain wall mobility are expected to contribute to overall greater radiation tolerance in PMN-PT thin films. Nonlinear trends were found in dielectric and piezoelectric response with increasing dose, showing enhanced response at low doses of radiation before degradation at high doses. However, such variations were also within the experimentally observed dispersion of the data. The results are expected to impact systems to be deployed in areas of high radiation exposure, including systems used in aerospace, medical physics, X-ray/high-energy source measurement tools, and continuous monitoring of nuclear power applications.
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Ha TD, Yen M, Lai YH, Kuo CY, Chen CT, Tanaka A, Tsai LZ, Zhao YF, Duan CG, Lee SF, Chang CF, Juang JY, Chu YH. Mechanically tunable exchange coupling of Co/CoO bilayers on flexible muscovite substrates. NANOSCALE 2020; 12:3284-3291. [PMID: 31971196 DOI: 10.1039/c9nr08810e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The employment of flexible muscovite substrates has given us the feasibility of applying strain to heterostructures dynamically by mechanical bending. In this study, this novel approach is utilized to investigate strain effects on the exchange coupling in ferromagnetic Co and anti-ferromagnetic CoO (Co/CoO) bilayers. Two different Co/CoO bilayer heterostructures were grown on muscovite substrates by oxide molecular beam epitaxy, with the CoO layer being purely (111)- and (100)-oriented. The strain-dependent exchange coupling effect can only be observed on Co/CoO(100)/mica but not on Co/CoO(111)/mica. The origin of this phenomenon is attributed to the anisotropic spin re-orientation induced by mechanical bending. The strain-dependent magnetic anisotropy of the bilayers determined by anisotropic magnetoresistance measurements confirms this conjecture. This study elucidates the fundamental understanding of how magnetic exchange coupling can be tuned by externally applied strain via mechanical bending and, hence, provides a novel approach for implementing flexible spintronic devices.
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Affiliation(s)
- Thai Duy Ha
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. and Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany
| | - Min Yen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Hong Lai
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chang-Yang Kuo
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany and National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Chien-Te Chen
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Arata Tanaka
- Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
| | - Li-Zai Tsai
- Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Yi-Feng Zhao
- Department of Electronic Engineering, East China Normal University, Shanghai, China
| | - Chun-Gang Duan
- Department of Electronic Engineering, East China Normal University, Shanghai, China
| | - Shang-Fan Lee
- Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany
| | - Jenh-Yih Juang
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.
| | - Ying-Hao Chu
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. and Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan and Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan
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16
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Irwin J, Lindemann S, Maeng W, Wang JJ, Vaithyanathan V, Hu JM, Chen LQ, Schlom DG, Eom CB, Rzchowski MS. Magnetoelectric Coupling by Piezoelectric Tensor Design. Sci Rep 2019; 9:19158. [PMID: 31844071 PMCID: PMC6914799 DOI: 10.1038/s41598-019-55139-1] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2019] [Accepted: 11/05/2019] [Indexed: 11/24/2022] Open
Abstract
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric/ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain manipulates the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the large reduction of in-plane piezoelectric strain by substrate clamping, and in two-terminal devices, the requirement of anisotropic in-plane strain. Here we show that these limitations can be overcome by designing the piezoelectric strain tensor using the boundary interaction between biased and unbiased piezoelectric. We fabricated 500 nm thick, (001) oriented [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting electric field-driven Ni magnetization rotation. We develop a method that can apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
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Affiliation(s)
- J Irwin
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - S Lindemann
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - W Maeng
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - J J Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - V Vaithyanathan
- Department of Material Science and Engineering, Cornell University, Ithaca, New York, 14853, United States
| | - J M Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - L Q Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, 16802, United States
| | - D G Schlom
- Department of Material Science and Engineering, Cornell University, Ithaca, New York, 14853, United States.,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York, 14853, United States
| | - C B Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States
| | - M S Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706, United States.
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Zhang Y, Han MG, Garlow JA, Tan Y, Xue F, Chen LQ, Munroe P, Valanoor N, Zhu Y. Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers. NANO LETTERS 2019; 19:5319-5326. [PMID: 31268341 DOI: 10.1021/acs.nanolett.9b01782] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive ferroelastic switching in these systems remains elusive. Here, the crucial roles of strain and electrostatic boundary conditions in ferroelectric bilayer systems are revealed, which underpin their ferroelastic switching dynamics. Using in situ electrical biasing in the transmission electron microscope (TEM), the motion of ferroelastic domain walls is investigated in a tetragonal (T) Pb(Zr,Ti)O3 (PZT)/rhombohedral (R) PZT epitaxial bilayer system. Atomic resolution electron microscopy, in tandem with phase field simulations, indicates that ferroelastic switching is triggered by predominant nucleation at the triple domain junctions located at the interface between the T/R layers. Furthermore, this interfacial nucleation leads to systematic reversable reorientation of ferroelastic domain walls. Deterministic ferroelastic domain switching, driven by the interfacial strain and electrostatic boundary conditions in the ferroelectric bilayer, provides a viable pathway toward novel design of miniaturized energy-efficient electromechanical devices.
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Affiliation(s)
- Yangyang Zhang
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Myung-Geun Han
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Joseph A Garlow
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Yueze Tan
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Fei Xue
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Long-Qing Chen
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Paul Munroe
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Nagarajan Valanoor
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Yimei Zhu
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
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Bae SH, Kum H, Kong W, Kim Y, Choi C, Lee B, Lin P, Park Y, Kim J. Integration of bulk materials with two-dimensional materials for physical coupling and applications. NATURE MATERIALS 2019; 18:550-560. [PMID: 31114063 DOI: 10.1038/s41563-019-0335-2] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2018] [Accepted: 03/06/2019] [Indexed: 05/21/2023]
Abstract
Hybrid heterostructures are essential for functional device systems. The advent of 2D materials has broadened the material set beyond conventional 3D material-based heterostructures. It has triggered the fundamental investigation and use in applications of new coupling phenomena between 3D bulk materials and 2D atomic layers that have unique van der Waals features. Here we review the state-of-the-art fabrication of 2D and 3D heterostructures, present a critical survey of unique phenomena arising from forming 3D/2D interfaces, and introduce their applications. We also discuss potential directions for research based on these new coupled architectures.
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Affiliation(s)
- Sang-Hoon Bae
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyun Kum
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Wei Kong
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yunjo Kim
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Byunghun Lee
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Peng Lin
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmo Park
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jeehwan Kim
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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Foley BM, Wallace M, Gaskins JT, Paisley EA, Johnson-Wilke RL, Kim JW, Ryan PJ, Trolier-McKinstry S, Hopkins PE, Ihlefeld JF. Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes. ACS APPLIED MATERIALS & INTERFACES 2018; 10:25493-25501. [PMID: 29978704 DOI: 10.1021/acsami.8b04169] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Ferroelastic domain walls in ferroelectric materials possess two properties that are known to affect phonon transport: a change in crystallographic orientation and a lattice strain. Changing populations and spacing of nanoscale-spaced ferroelastic domain walls lead to the manipulation of phonon-scattering rates, enabling the control of thermal conduction at ambient temperatures. In the present work, lead zirconate titanate (PZT) thin-film membrane structures were fabricated to reduce mechanical clamping to the substrate and enable a subsequent increase in the ferroelastic domain wall mobility. Under application of an electric field, the thermal conductivity of PZT increases abruptly at ∼100 kV/cm by ∼13% owing to a reduction in the number of phonon-scattering domain walls in the thermal conduction path. The thermal conductivity modulation is rapid, repeatable, and discrete, resulting in a bistable state or a "digital" modulation scheme. The modulation of thermal conductivity due to changes in domain wall configuration is supported by polarization-field, mechanical stiffness, and in situ microdiffraction experiments. This work opens a path toward a new means to control phonons and phonon-mediated energy in a digital manner at room temperature using only an electric field.
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Affiliation(s)
| | - Margeaux Wallace
- Department of Materials Science and Engineering and Materials Research Institute , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | | | - Elizabeth A Paisley
- Sandia National Laboratories , Albuquerque , New Mexico 87185 , United States
| | | | - Jong-Woo Kim
- Advanced Photon Source , Argonne National Laboratory , Lemont , Illinois 60439 , United States
| | - Philip J Ryan
- Advanced Photon Source , Argonne National Laboratory , Lemont , Illinois 60439 , United States
| | - Susan Trolier-McKinstry
- Department of Materials Science and Engineering and Materials Research Institute , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | | | - Jon F Ihlefeld
- Sandia National Laboratories , Albuquerque , New Mexico 87185 , United States
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20
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Tang D, Zeng Z, Zhou Q, Su S, Hu D, Li P, Lin X, Gao X, Lu X, Wang X, Jin M, Zhou G, Zhang Z, Liu J. Ordered multiferroic CoFe2O4–Pb(Zr0.52Ti0.48)O3coaxial nanotube arrays with enhanced magnetoelectric coupling. RSC Adv 2017. [DOI: 10.1039/c7ra04183g] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023] Open
Abstract
In this paper, vertically free-standing multiferroic CoFe2O4–Pb(Zr0.52Ti0.48)O3(CFO–PZT) coaxial nanotube arrays with both good ordering and high density were prepared by a template-assisted sol–gel method.
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Zhang X, Tang D, Huang K, Hu D, Zhang F, Gao X, Lu X, Zhou G, Zhang Z, Liu J. Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching. NANOSCALE RESEARCH LETTERS 2016; 11:225. [PMID: 27117635 PMCID: PMC4846609 DOI: 10.1186/s11671-016-1369-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/16/2015] [Accepted: 03/13/2016] [Indexed: 06/05/2023]
Abstract
In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.
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Affiliation(s)
- Xiaoyan Zhang
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Dan Tang
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Kangrong Huang
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Die Hu
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Fengyuan Zhang
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Xingsen Gao
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Xubing Lu
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Guofu Zhou
- />Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province 510006 China
- />Academy of Shenzhen Guohua Optoelectronics, Shenzhen, 518110 China
| | - Zhang Zhang
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
| | - Junming Liu
- />Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 China
- />Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
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22
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Huang HH, Hong Z, Xin HL, Su D, Chen LQ, Huang G, Munroe PR, Valanoor N. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers. ACS NANO 2016; 10:10126-10134. [PMID: 27797485 DOI: 10.1021/acsnano.6b05180] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses are investigated. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-4-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better "craft" such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.
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Affiliation(s)
- Hsin-Hui Huang
- School of Materials Science and Engineering, University of New South Wales , Sydney, New South Wales 2052, Australia
| | - Zijian Hong
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802-5006, United States
| | - Huolin L Xin
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Dong Su
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802-5006, United States
| | - Guanzhong Huang
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
- Department of Materials Science and Engineering, Stony Brook University , Stony Brook, New York 11794-3400, United States
| | - Paul R Munroe
- School of Materials Science and Engineering, University of New South Wales , Sydney, New South Wales 2052, Australia
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, University of New South Wales , Sydney, New South Wales 2052, Australia
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23
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Zhang Y, Chen Y, Mietschke M, Zhang L, Yuan F, Abel S, Hühne R, Nielsch K, Fompeyrine J, Ding F, Schmidt OG. Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots. NANO LETTERS 2016; 16:5785-5791. [PMID: 27574953 DOI: 10.1021/acs.nanolett.6b02523] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Elastic strain fields based on single crystal piezoelectric elements represent an effective way for engineering the quantum dot (QD) emission with unrivaled precision and technological relevance. However, pioneering researches in this direction were mainly based on bulk piezoelectric substrates, which prevent the development of chip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitaxial PMN-PT thin films have been grown on SrTiO3 buffered Si and show excellent piezoelectric responses. Dense arrays of MEMS with small footprints are then fabricated based on these films, forming an on-chip strain tuning platform. After transferring the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.
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Affiliation(s)
| | | | | | - Long Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , 110016, Shenyang, China
- Institute for Complex Materials, IFW Dresden , Helmholtzstraße 20, 01069 Dresden, Germany
| | | | - Stefan Abel
- IBM Research GmbH , Säumerstraße 4, 8803 Rüschlikon, Switzerland
| | | | | | - Jean Fompeyrine
- IBM Research GmbH , Säumerstraße 4, 8803 Rüschlikon, Switzerland
| | | | - Oliver G Schmidt
- Material Systems for Nanoelectronics, Technische Universität Chemnitz , 09111 Chemnitz, Germany
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24
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Khomyakova E, Sadl M, Ursic H, Daniels J, Malic B, Bencan A, Damjanovic D, Rojac T. Self-Poling of BiFeO3 Thick Films. ACS APPLIED MATERIALS & INTERFACES 2016; 8:19626-19634. [PMID: 27388568 DOI: 10.1021/acsami.6b05885] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.
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Affiliation(s)
- Evgeniya Khomyakova
- Electronic Ceramics Department, Jozef Stefan Institute , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
- Jozef Stefan International Postgraduate School , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
| | - Matej Sadl
- Electronic Ceramics Department, Jozef Stefan Institute , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
| | - Hana Ursic
- Electronic Ceramics Department, Jozef Stefan Institute , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
| | - John Daniels
- School of Materials Science and Engineering, University of New South Wales , Sydney, New South Wales 2052, Australia
| | - Barbara Malic
- Electronic Ceramics Department, Jozef Stefan Institute , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
- Jozef Stefan International Postgraduate School , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
| | - Andreja Bencan
- Electronic Ceramics Department, Jozef Stefan Institute , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
- Jozef Stefan International Postgraduate School , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
| | - Dragan Damjanovic
- Ceramics Laboratory, Swiss Federal Institute of Technology in Lausanne-EPFL , 1015 Lausanne, Switzerland
| | - Tadej Rojac
- Electronic Ceramics Department, Jozef Stefan Institute , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
- Jozef Stefan International Postgraduate School , Jamova Cesta, 39, 1000 Ljubljana, Slovenia
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25
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Quan Jiang A, Jian Meng X, Wei Zhang D, Hyuk Park M, Yoo S, Jin Kim Y, Scott JF, Seong Hwang C. Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong. Sci Rep 2015; 5:14618. [PMID: 26440528 PMCID: PMC4594126 DOI: 10.1038/srep14618] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2014] [Accepted: 09/02/2015] [Indexed: 11/09/2022] Open
Abstract
The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μm(-2), which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.
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Affiliation(s)
- An Quan Jiang
- State Key Laboratory of ASIC &System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiang Jian Meng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - David Wei Zhang
- State Key Laboratory of ASIC &System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - Sijung Yoo
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - Yu Jin Kim
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - James F Scott
- School of Chemistry and School of Physics, St. Andrews Univ., St. Andrews, U.K. KY16 9ST
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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26
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Piezoelectric micromachined ultrasound transducer (PMUT) arrays for integrated sensing, actuation and imaging. SENSORS 2015; 15:8020-41. [PMID: 25855038 PMCID: PMC4431219 DOI: 10.3390/s150408020] [Citation(s) in RCA: 96] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/13/2015] [Accepted: 03/26/2015] [Indexed: 01/30/2023]
Abstract
Many applications of ultrasound for sensing, actuation and imaging require miniaturized and low power transducers and transducer arrays integrated with electronic systems. Piezoelectric micromachined ultrasound transducers (PMUTs), diaphragm-like thin film flexural transducers typically formed on silicon substrates, are a potential solution for integrated transducer arrays. This paper presents an overview of the current development status of PMUTs and a discussion of their suitability for miniaturized and integrated devices. The thin film piezoelectric materials required to functionalize these devices are discussed, followed by the microfabrication techniques used to create PMUT elements and the constraints the fabrication imposes on device design. Approaches for electrical interconnection and integration with on-chip electronics are discussed. Electrical and acoustic measurements from fabricated PMUT arrays with up to 320 diaphragm elements are presented. The PMUTs are shown to be broadband devices with an operating frequency which is tunable by tailoring the lateral dimensions of the flexural membrane or the thicknesses of the constituent layers. Finally, the outlook for future development of PMUT technology and the potential applications made feasible by integrated PMUT devices are discussed.
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27
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Johnson-Wilke RL, Wilke RHT, Wallace M, Rajashekhar A, Esteves G, Merritt Z, Jones JL, Trolier-McKinstry S. Ferroelectric/Ferroelastic domain wall motion in dense and porous tetragonal lead zirconate titanate films. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2015; 62:46-55. [PMID: 25585389 DOI: 10.1109/tuffc.2014.006562] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Direct evidence of ferroelectric/ferroelastic domain reorientation is shown in Pb(Zr0.30Ti0.70)O3 (PZT30/70) thin films clamped to a rigid silicon substrate using in situ synchrotron X-ray diffraction during application of electric fields. Both dense films and films with 3 to 4 vol% porosity were measured. On application of electric fields exceeding the coercive field, it is shown that the porous films exhibit a greater volume fraction of ferroelastic domain reorientation (approximately 12 vol% of domains reorient at 3 times the coercive field, Ec) relative to the dense films (~3.5 vol% at 3Ec). Furthermore, the volume fraction of domain reorientation significantly exceeded that predicted by linear mixing rules. The high response of domain reorientation in porous films is discussed in the context of two mechanisms: local enhancement of the electric field near the pores and a reduction of substrate clamping resulting from the lowering of the film stiffness as a result of the porosity. Similar measurements during weak-field (subcoercive) amplitudes showed 0.6% volume fraction of domains reoriented for the porous films, which demonstrates that extrinsic effects contribute to the dielectric and piezoelectric properties.
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28
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Chu P, Chen DP, Wang YL, Xie YL, Yan ZB, Wan JG, Liu JM, Li JY. Kinetics of 90° domain wall motions and high frequency mesoscopic dielectric response in strained ferroelectrics: a phase-field simulation. Sci Rep 2014; 4:5007. [PMID: 24845806 PMCID: PMC4028899 DOI: 10.1038/srep05007] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2014] [Accepted: 05/01/2014] [Indexed: 11/20/2022] Open
Abstract
The dielectric and ferroelectric behaviors of a ferroelectric are substantially determined by its domain structure and domain wall dynamics at mesoscopic level. A relationship between the domain walls and high frequency mesoscopic dielectric response is highly appreciated for high frequency applications of ferroelectrics. In this work we investigate the low electric field driven motion of 90°-domain walls and the frequency-domain spectrum of dielectric permittivity in normally strained ferroelectric lattice using the phase-field simulations. It is revealed that, the high-frequency dielectric permittivity is spatially inhomogeneous and reaches the highest value on the 90°-domain walls. A tensile strain favors the parallel domains but suppresses the kinetics of the 90° domain wall motion driven by electric field, while the compressive strain results in the opposite behaviors. The physics underlying the wall motions and thus the dielectric response is associated with the long-range elastic energy. The major contribution to the dielectric response is from the polarization fluctuations on the 90°-domain walls, which are more mobile than those inside the domains. The relevance of the simulated results wth recent experiments is discussed.
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Affiliation(s)
- P Chu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - D P Chen
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Y L Wang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Y L Xie
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Z B Yan
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - J G Wan
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - J-M Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - J Y Li
- Department of Mechanical Engineering, University of Washington, Seattle, WA 98195, USA
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