Overcoming the phase inhomogeneity in chemically functionalized graphene: the case of graphene oxides

Density functional theory and molecular dynamics simulation of water molecules confined between two-dimensional graphene oxide surfaces

In this work, the interaction potentials of water molecule with the two-dimensional graphene oxide (GO) surfaces containing epoxy groups have been determined using the M06-2X/6-31g (d,p) level of theory at different orientations and separations and fitted to the Born-Huggins-Meyer (BHM) potential. Good agreements were found between the computed and the well-known OPLS-AA and Dreiding potentials. We have also used some calculated potentials and the well-known models in the molecular dynamics (MD) simulations. Our results showed that some of the calculated force fields for both 2D GO structures almost represent similar results of average number of hydrogen bonds (), radial distribution functions (RDF), self-diffusion coefficient, and angle distribution function (ADF) with the OPLS-AA and Dreiding models which are due to their agreements of the interaction potentials. However, some models in both GO systems represent different results because of their shifted potentials to the larger distances. Our results also showed that the confined water molecules tend to orient toward the epoxy groups on the GO surfaces and the distributions at the angles of θ = 0o (or θ = 180o) is more than the other distributions. The water molecules confined between the bent GO surfaces showed less diffusion coefficients than the flat structure.

Functionalized Amorphous Carbon Materials via Reactive Molecular Dynamics Simulations

We derive a database of atomistic structural models of amorphous carbon materials endowed with exohedral functional groups. We start from phases previously derived using the DynReaxMas method for reactive molecular dynamics simulations, which exhibit atomistic and medium-length-scale features in excellent agreement with available experimental data. Given a generic input structure/phase, we develop postprocessing simulation algorithms mimicking experimental preparation protocols aimed at: (1) "curing" the phase to decrease the defect concentration; (2) automatically selecting the most reactive carbon atoms via interaction with a probe molecular species, and (3) stabilizing the phase by saturating the valence of carbon atoms with single-bond functional groups. Although we focus on oxygen-bearing functionalities, they can be replaced with other monovalent groups, such as -H, -COOH, -CHO, so that the protocol is quite general. We finally classify reactive sites in terms of their location within the structural framework and coordination environment (edges, tunnels, rings, aromatic carbons becoming aliphatic) and try to single out descriptors that correlate with tendency to functionalization.

Theoretical Prediction of Two-Dimensional Materials, Behavior, and Properties

Predictive modeling of two-dimensional (2D) materials is at the crossroad of two current rapidly growing interests: 2D materials per se, massively sought after and explored in experimental laboratories, and materials theoretical-computational models in general, flourishing on a fertile mix of condensed-matter physics and chemistry with advancing computational technology. Here the general methods and specific techniques of modeling are briefly overviewed, along with a somewhat philosophical assessment of what "prediction" is, followed by selected practical examples for 2D materials, from structures and properties, to device functionalities and synthetic routes for their making. We conclude with a brief sketch-outlook of future developments.

A novel green approach for reduction of free standing graphene oxide: electrical and electronic structural investigations

Ion beam irradiation technique has been proposed, for efficient, fast and eco-friendly reduction of graphene oxide (GO), as an alternative to the conventional methods. 5 MeV, Au⁺ ion beam has been used to reduce the free standing GO flake. Both electronic and nuclear energy loss mechanisms of the irradiation process play a major role in removal of oxygen moieties and recovery of graphene network. Atomic resolution scanning tunnelling microscopy analysis of the irradiated GO flake shows the characteristic honeycomb structure of graphene. X-ray absorption near edge structure analysis at C K-edge reveals that the features of the irradiated GO flake resemble the few layer graphene. Resonant Rutherford backscattering spectrometry analysis evidenced an enhanced C/O ratio of ∼23 in the irradiated GO. In situ sheet resistance measurements exhibit a sharp decrease of resistance (few 100 s of Ω) at a fluence of 6.5 × 10¹⁴ ions cm^-2. Photoluminescence spectroscopic analysis of irradiated GO shows a sharp blue emission, while pristine GO exhibits a broad emission in the visible-near IR region. Region selective reduction, tunable electrical and optical properties by controlling C/O ratio makes ion irradiation as a versatile tool for the green reduction of GO for diverse applications.

Two-Dimensional Stoichiometric Boron Oxides as a Versatile Platform for Electronic Structure Engineering

Oxides of two-dimensional (2D) atomic crystals have been widely studied due to their unique properties. In most 2D oxides, oxygen acts as a functional group, which makes it difficult to control the degree of oxidation. Because borophene is an electron-deficient system, it is expected that oxygen will be intrinsically incorporated into the basal plane of borophene, forming stoichiometric 2D boron oxide (BO) structures. By using first-principles global optimization, we systematically explore structures and properties of 2D BO systems with well-defined degrees of oxidation. Stable B-O-B and OB₃ tetrahedron structure motifs are identified in these structures. Interesting properties, such as strong linear dichroism, Dirac node-line (DNL) semimetallicity, and negative differential resistance, have been predicted for these systems. Our results demonstrate that 2D BO represents a versatile platform for electronic structure engineering via tuning the stoichiometric degree of oxidation, which leads to various technological applications.

An ab initio study of hydroxylated graphane

Graphene-based derivatives with covalent functionalization and well-defined stoichiometry are highly desirable in view of their application as functional surfaces. Here, we have evaluated by ab initio calculations the energy of formation and the phase diagram of hydroxylated graphane structures, i.e., fully functionalized graphene derivatives coordinated with -H and -OH groups. We compared these structures to different hydrogenated and non-hydrogenated graphene oxide derivatives, with high level of epoxide and hydroxyl groups functionalization. Based on our calculations, stable phases of hydroxylated graphane with low and high contents of hydrogen are demonstrated for high oxygen and hydrogen partial pressure, respectively. Stable phases of graphene oxide with a mixed carbon hybridization are also found. Notably, the synthesis of hydroxylated graphane has been recently reported in the literature.

The effects of vacancy and oxidation on black phosphorus nanoresonators

Black phosphorene (BP) is not stable at ambient conditions, so atomic defects and oxidation effects are unavoidable in BP samples in the experiment. The effects of these defects on the performance of the BP nanoresonators are still unclear. Here, we perform classical molecular dynamics to investigate the effects of the vacancy and oxidation on single-layer BP nanoresonators at different temperatures. We find that the vacancy causes a strong reduction in the quality factor of the nanoresonators, while the oxidation has a weaker effect on the nanoresonators. More specifically, a 2% concentration of randomly distributed single vacancies is able to reduce the quality factor by about 80% and 40% at 4.2 K and 50 K, respectively. We also find that the quality factor of the nanoresonators is not sensitive to the distribution pattern of the vacancy defects.

Enhanced Cell Capture on Functionalized Graphene Oxide Nanosheets through Oxygen Clustering

With the global rise in incidence of cancer and infectious diseases, there is a need for the development of techniques to diagnose, treat, and monitor these conditions. The ability to efficiently capture and isolate cells and other biomolecules from peripheral whole blood for downstream analyses is a necessary requirement. Graphene oxide (GO) is an attractive template nanomaterial for such biosensing applications. Favorable properties include its two-dimensional architecture and wide range of functionalization chemistries, offering significant potential to tailor affinity toward aromatic functional groups expressed in biomolecules of interest. However, a limitation of current techniques is that as-synthesized GO nanosheets are used directly in sensing applications, and the benefits of their structural modification on the device performance have remained unexplored. Here, we report a microfluidic-free, sensitive, planar device on treated GO substrates to enable quick and efficient capture of Class-II MHC-positive cells from murine whole blood. We achieve this by using a mild thermal annealing treatment on the GO substrates, which drives a phase transformation through oxygen clustering. Using a combination of experimental observations and MD simulations, we demonstrate that this process leads to improved reactivity and density of functionalization of cell capture agents, resulting in an enhanced cell capture efficiency of 92 ± 7% at room temperature, almost double the efficiency afforded by devices made using as-synthesized GO (54 ± 3%). Our work highlights a scalable, cost-effective, general approach to improve the functionalization of GO, which creates diverse opportunities for various next-generation device applications.

Two-dimensional shape memory graphene oxide

Driven by the increasing demand for micro-/nano-technologies, stimuli-responsive shape memory materials at nanoscale have recently attracted great research interests. However, by reducing the size of conventional shape memory materials down to approximately nanometre range, the shape memory effect diminishes. Here, using density functional theory calculations, we report the discovery of a shape memory effect in a two-dimensional atomically thin graphene oxide crystal with ordered epoxy groups, namely C₈O. A maximum recoverable strain of 14.5% is achieved as a result of reversible phase transition between two intrinsically stable phases. Our calculations conclude co-existence of the two stable phases in a coherent crystal lattice, giving rise to the possibility of constructing multiple temporary shapes in a single material, thus, enabling highly desirable programmability. With an atomic thickness, excellent shape memory mechanical properties and electric field stimulus, the discovery of a two-dimensional shape memory graphene oxide opens a path for the development of exceptional micro-/nano-electromechanical devices.

When reducing the size of shape memory materials to the nanoscale regime, the memory effect tends to diminish. Here, the authors report a theoretical proposal of a shape memory graphene oxide with ordered epoxy groups retaining excellent programmability and actuation capabilities.

Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction

Two-dimensional (2D) semiconductors can be very useful for novel electronic and optoelectronic applications because of their good material properties. However, all current 2D materials have shortcomings that limit their performance. As a result, new 2D materials are highly desirable. Using atomic transmutation and differential evolution global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has shown good electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer control and applied strain, and good air stability as well. Therefore, Pma2-SiS is expected to be a promising 2D material in the field of 2D electronics and optoelectronics. The designing principles demonstrated in identifying these two tantalizing examples have great potential to accelerate the finding of new functional 2D materials.

Lithium-Boron (Li-B) Monolayers: First-Principles Cluster Expansion and Possible Two-Dimensional Superconductivity

Recent works demonstrated that the superconductivity at two-dimensional (2-D) can be achieved in Li-decorated graphene (Nature Phys. 2012, 8, 131 and Proc. Natl. Acad. Sci. 2015, 112, 11795). Inspired by the progress made in graphene, we predict by using the first-principles calculations that Li-incorporated B monolayers (Li-B monolayers) can be alternative 2-D superconductors. First-principles cluster expansion approach was used to evaluate the structural diversity and energetic stability of the 2-D Li-B monolayers by treating them as ternary Lix⬡yB1-x-y pseudoalloys (⬡ refers to B hexagonal hole). After thoroughly exploring the Li-B configuration space, several well-ordered and stable Li-B monolayers were identified. Detailed analyses regarding the electronic structures and lattice dynamics properties of the predicted Li-B monolayers were performed. Compared with the non-superconducting pure B-sheet, some predicted Li-B monolayers can exhibit the phonon-mediated superconducting properties above the liquid helium temperature.

Switchable polarization in an unzipped graphene oxide monolayer

Unzipped graphene oxide monolayers have polar configurations that are more stable than the flat ones, when the unit cell is doubled along the y axis, the antiferroelectric-like non-polar configuration is more stable than the polar one.

Predicting Two-Dimensional Silicon Carbide Monolayers

Intrinsic semimetallicity of graphene and silicene largely limits their applications in functional devices. Mixing carbon and silicon atoms to form two-dimensional (2D) silicon carbide (SixC1-x) sheets is promising to overcome this issue. Using first-principles calculations combined with the cluster expansion method, we perform a comprehensive study on the thermodynamic stability and electronic properties of 2D SixC1-x monolayers with 0 ≤ x ≤ 1. Upon varying the silicon concentration, the 2D SixC1-x presents two distinct structural phases, a homogeneous phase with well dispersed Si (or C) atoms and an in-plane hybrid phase rich in SiC domains. While the in-plane hybrid structure shows uniform semiconducting properties with widely tunable band gap from 0 to 2.87 eV due to quantum confinement effect imposed by the SiC domains, the homogeneous structures can be semiconducting or remain semimetallic depending on a superlattice vector which dictates whether the sublattice symmetry is topologically broken. Moreover, we reveal a universal rule for describing the electronic properties of the homogeneous SixC1-x structures. These findings suggest that the 2D SixC1-x monolayers may present a new "family" of 2D materials, with a rich variety of properties for applications in electronics and optoelectronics.

Phosphorene oxide: stability and electronic properties of a novel two-dimensional material

Phosphorene, the monolayer form of (black) phosphorus, was recently exfoliated from its bulk counterpart. Phosphorene oxide, by analogy to graphene oxide, is expected to have novel chemical and electronic properties, and may provide an alternative route to the synthesis of phosphorene. In this research, the physical and chemical properties of phosphorene oxide including its formation by oxygen adsorption on the bare phosphorene was investigated. Analysis of the phonon dispersion curves finds stoichiometric and non-stoichiometric oxide configurations to be stable at ambient conditions, thus suggesting that the oxygen adsorption may not degrade the phosphorene. The nature of the band gap of the oxides depends on the degree of functionalization of phosphorene; an indirect gap is predicted for the non-stoichiometric configurations, whereas a direct gap is predicted for the stoichiometric oxide. Application of mechanical strain or an external electric field leads to tunability of the band gap of the phosphorene oxide. In contrast to the case of the bare phosphorene, dependence of the diode-like asymmetric current-voltage response on the degree of stoichiometry is predicted for the phosphorene oxide.

Adaptive cluster expansion approach for predicting the structure evolution of graphene oxide

An adaptive cluster expansion (CE) method is used to explore surface adsorption and growth processes. Unlike the traditional CE method, suitable effective cluster interaction (ECI) parameters are determined, and then the selected fixed number of ECIs is continually optimized to predict the stable configurations with gradual increase of adatom coverage. Comparing with traditional CE method, the efficiency of the adaptive CE method could be greatly enhanced. As an application, the adsorption and growth of oxygen atoms on one side of pristine graphene was carefully investigated using this method in combination with first-principles calculations. The calculated results successfully uncover the structural evolution of graphene oxide for the different numbers of oxygen adatoms on graphene. The aggregation behavior of the stable configurations for different oxygen adatom coverages is revealed for increasing coverages of oxygen atoms. As a targeted method, adaptive CE can also be applied to understand the evolution of other surface adsorption and growth processes.

A re-evaluation of how functional groups modify the electronic structure of graphene oxide

The first 4 eV of the conduction band in graphene oxide is dominated by states from carbon sites that are in close proximity, but not directly bonded, to oxidizing functional groups. The carbon sites that are bonded directly to these groups, such as epoxide and hydroxyl groups, are much higher in energy.

Origin of the chemical and kinetic stability of graphene oxide

At moderate temperatures (≤ 70°C), thermal reduction of graphene oxide is inefficient and after its synthesis the material enters in a metastable state. Here, first-principles and statistical calculations are used to investigate both the low-temperature processes leading to decomposition of graphene oxide and the role of ageing on the structure and stability of this material. Our study shows that the key factor underlying the stability of graphene oxide is the tendency of the oxygen functionalities to agglomerate and form highly oxidized domains surrounded by areas of pristine graphene. Within the agglomerates of functional groups, the primary decomposition reactions are hindered by both geometrical and energetic factors. The number of reacting sites is reduced by the occurrence of local order in the oxidized domains, and due to the close packing of the oxygen functionalities, the decomposition reactions become - on average - endothermic by more than 0.6 eV.

Tunable Anderson localization in hydrogenated graphene based on the electric field effect

Effective control of hydrogenation of graphene is of great scientific and technological importance. However, the reversible control of H density (n(H)) on graphene is difficult due to the irreversible H2 formation of the detached H adatoms. Here we present a novel mechanism for controlling n(H) by using the unique proton transfer reaction between NH3 gas and hydrogenated graphene, which can be tuned by applying perpendicular electric fields. Using first-principles calculations, we show that n(H) can be reversibly tuned by the applied electric fields around the critical density for the Anderson localization in hydrogenated graphene. The proposed field-induced control of H adsorption or desorption on graphene opens a path toward the development of new graphene transistors based on the tunable degree of disorder.

Chemical functionalization of silicene: spontaneous structural transition and exotic electronic properties

The use of newly discovered silicene for various optoelectronic applications depends largely on the possibility of controlling its electronic properties by chemical functionalization. To investigate this possibility, we systemically study the structural and electronic properties of chemically functionalized silicene by employing first-principles calculations combined with the cluster expansion approach. Interestingly, we find that chemically functionalized epitaxial silicene is generally accompanied by a spontaneous structural transition, which originates from the preference of sp(3) hybridization of silicon. To realized continuously tunable band gaps, chemical functionalization of freestanding silicene at ~900 K is proposed. Finally, we predict that metastable silicene can also be used as an important host material to produce novel functional materials via substitutional doping. For example, the discovered ordered Si(8)P(4) could be a strong candidate for thin-film solar cell absorbers beyond bulk Si.